JP2002283211A - Polishing device and grinding/polishing machine including this - Google Patents
Polishing device and grinding/polishing machine including thisInfo
- Publication number
- JP2002283211A JP2002283211A JP2001093398A JP2001093398A JP2002283211A JP 2002283211 A JP2002283211 A JP 2002283211A JP 2001093398 A JP2001093398 A JP 2001093398A JP 2001093398 A JP2001093398 A JP 2001093398A JP 2002283211 A JP2002283211 A JP 2002283211A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor wafer
- grinding
- back surface
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 205
- 238000000227 grinding Methods 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 109
- 239000006061 abrasive grain Substances 0.000 claims abstract description 18
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 4
- 230000000717 retained effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 89
- 238000011068 loading method Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 6
- 239000002440 industrial waste Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、殊に加工歪を有す
る半導体ウエーハの裏面を研磨するのに適した研磨装
置、及びかかる研磨装置を具備した研削・研磨機に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus particularly suitable for polishing a back surface of a semiconductor wafer having a processing strain, and a grinding / polishing machine equipped with such a polishing apparatus.
【０００２】[0002]
【従来の技術】半導体チップの製造工程においては、半
導体ウエーハの表面に格子状に配列されたストリートに
よって多数の矩形領域を区画し、矩形領域の各々に半導
体回路を配設する。そして、ストリートの各々に沿って
半導体ウエーハを分離することによって矩形領域の各々
を半導体チップにせしめている。半導体チップの小型化
及び軽量化のために、矩形領域を個々に分離するに先立
って半導体ウエーハの裏面を研削し、これによって半導
体ウエーハの厚さを減少せしめることが望まれることも
少なくない。半導体ウエーハの裏面の研削は、通常、ダ
イヤモンド砥粒をレジンボンドの如き適宜のボンドで固
着して形成した研削手段を、高速回転せしめながら半導
体ウエーハの裏面に押圧せしめることによって遂行され
ている。かような研削様式によって半導体ウエーハの裏
面を研削すると、半導体ウエーハの裏面に所謂加工歪が
生成され、これによって抗折強度が相当低減される。半
導体ウエーハの裏面に生成される加工歪を除去し、かく
して抗折強度の低減を回避するために、研削された半導
体ウエーハの裏面を遊離砥粒を使用してポリッジングす
ること、及び研削された半導体ウエーハの裏面を硝酸及
び弗化水素酸を含むエンチング液を使用して化学的エッ
チングすることが提案されている。更に、特開平２００
０−３４３４４０号公報には、適宜の布に砥粒を分散せ
しめて構成された研磨手段を使用して、半導体ウエーハ
の裏面を研磨することが開示されている。2. Description of the Related Art In a semiconductor chip manufacturing process, a large number of rectangular regions are divided by streets arranged in a grid on the surface of a semiconductor wafer, and a semiconductor circuit is provided in each of the rectangular regions. Then, the semiconductor wafer is separated along each of the streets to make each of the rectangular regions a semiconductor chip. In order to reduce the size and weight of the semiconductor chip, it is often desired to grind the back surface of the semiconductor wafer before separating the rectangular regions individually, thereby reducing the thickness of the semiconductor wafer. The grinding of the back surface of the semiconductor wafer is usually performed by pressing a grinding means formed by fixing diamond abrasive grains with an appropriate bond such as a resin bond against the back surface of the semiconductor wafer while rotating at high speed. When the back surface of the semiconductor wafer is ground by such a grinding method, a so-called processing strain is generated on the back surface of the semiconductor wafer, whereby the bending strength is considerably reduced. In order to remove the processing strain generated on the back surface of the semiconductor wafer and thus avoid reduction in the bending strength, the back surface of the ground semiconductor wafer is polished using free abrasive grains, and the ground semiconductor is removed. It has been proposed to chemically etch the backside of a wafer using an etching solution containing nitric acid and hydrofluoric acid. Further, JP-A-200
Japanese Patent Application Laid-Open No. 0-343440 discloses that the back surface of a semiconductor wafer is polished by using a polishing means configured by dispersing abrasive grains in an appropriate cloth.
【０００３】[0003]
【発明は解決しようとする課題】而して、遊離砥粒を使
用するポリッシングには、遊離砥粒の供給及び回収等に
煩雑な操作が必要であり効率が低い、大量に使用される
遊離砥粒を産業廃棄物として処理しなければならない、
という問題が存在する。エッチング液を使用する化学的
エッチングにも、大量に使用されるエッチング液を産業
廃棄物として処理しなければならない、という問題が存
在する。一方、布に砥粒を分散せしめて構成された研磨
手段による研磨においては、産業廃棄物として処理すべ
き物質が大量に生成されることがない。しかしながら、
未だ充分に満足し得る研磨効率及び研磨品質を達成する
ことができなかった。SUMMARY OF THE INVENTION Polishing using loose abrasives requires complicated operations such as supply and recovery of loose abrasives, is inefficient, and requires a large amount of loose abrasives. Granules must be treated as industrial waste,
The problem exists. Chemical etching using an etchant also has a problem that a large amount of the etchant must be treated as industrial waste. On the other hand, in polishing by a polishing means constituted by dispersing abrasive grains in cloth, a large amount of substances to be treated as industrial waste are not generated. However,
A sufficiently satisfactory polishing efficiency and polishing quality have not yet been achieved.
【０００４】本発明は上記事実に鑑みてなされたもので
あり、その第一の技術的課題は、産業廃棄物として処理
すべき物質を大量に生成せしめることなく、半導体ウエ
ーハの裏面を高研磨効率及び高研磨品質で研磨して、そ
こに存在していた加工歪を除去することができる、新規
且つ改良された研磨装置を提供することである。[0004] The present invention has been made in view of the above-mentioned facts, and the first technical problem is that the back surface of a semiconductor wafer has a high polishing efficiency without generating a large amount of material to be treated as industrial waste. Another object of the present invention is to provide a new and improved polishing apparatus capable of polishing with high polishing quality and removing the processing strain existing there.
【０００５】本発明の第二の技術的課題は、半導体ウエ
ーハの裏面を研削し、次いで半導体ウエーハの裏面を高
研磨効率及び高研磨品質で研磨し研削に起因して生成さ
れた加工歪を除去することができる、新規且つ改良され
た研削・研磨機を提供することである。A second technical object of the present invention is to grind the back surface of a semiconductor wafer and then grind the back surface of the semiconductor wafer with high polishing efficiency and high polishing quality to remove processing strain generated due to the grinding. And a new and improved grinding / polishing machine.
【０００６】[0006]
【課題を解決するための手段】本発明の一局面によれ
ば、上記第一の技術的課題を達成する研磨装置として、
回転自在に装着された、被加工物を保持するためのチャ
ック手段と、回転自在に装着された研磨工具とを具備
し、該研磨工具は密度が０．２０ｇ／ｃｍ３以上で硬度
が３０以上であるフェルト中に砥粒を分散せしめて構成
された研磨手段を有し、該チャック手段が回転せしめら
れると共に該研磨工具が回転せしめられ、該チャック手
段に保持されている被加工物に該研磨工具の該研磨手段
が押圧せしめられて被加工物が研磨される、ことを特徴
とする研磨装置が提供される。According to one aspect of the present invention, there is provided a polishing apparatus for achieving the first technical object,
It comprises a rotatably mounted chuck means for holding a workpiece, and a rotatably mounted polishing tool, wherein the polishing tool has a density of 0.20 g / cm 3 or more and a hardness of 30 or more. Polishing means configured to disperse abrasive grains in a felt, wherein the chuck means is rotated and the polishing tool is rotated, and the workpiece held by the chuck means is subjected to polishing. A polishing apparatus is provided, wherein the polishing means of the tool is pressed to grind the workpiece.
【０００７】好適実施形態においては、該チャック手段
上には被加工物である半導体ウエーハが保持され、該研
磨手段は半導体ウエーハの研削された裏面を研磨する。
該チャック手段と該研磨手段とは相互に逆方向に回転せ
しめられるのが好適である。該チャック手段の回転速度
は５乃至２００ｒｐｍ、特に１０乃至３０ｒｐｍで、該
研磨工具の回転速度は２０００乃至２００００ｒｐｍ、
特に５０００乃至８０００であるのが好適である。好ま
しくは、該研磨手段は１００乃至３００ｇ／ｃｍ２、特
に１８０乃至２２０ｇ／ｃｍ２の押圧力で被加工物に押
圧せしめられる。被加工物が略円板形状の半導体ウエー
ハである場合、該研磨手段は円板形状であり、半導体ウ
エーハの外径と該研磨手段の外径とは略同一であり、半
導体ウエーハの中心軸線と該研磨手段の中心軸線とは半
導体ウエーハの半径の１／３乃至１／２変位して位置せ
しめられているのが好適である。好ましくは、該研磨工
具は、その回転中心軸線に対して垂直で且つ該半導体ウ
エーハの中心軸線と該研磨手段の中心軸線との変位方向
に対して垂直な方向に、該チャック手段に対して相対的
に往復動せしめられる。該研磨手段は、半導体ウエーハ
の直径と同一乃至これより幾分大きい振幅で３０乃至６
０秒で一往復する速度で往復動せしめられるのが好適で
ある。In a preferred embodiment, a semiconductor wafer as a workpiece is held on the chuck means, and the polishing means polishes the ground back surface of the semiconductor wafer.
Preferably, the chuck means and the polishing means are rotated in opposite directions. The rotation speed of the chuck means is 5 to 200 rpm, particularly 10 to 30 rpm, and the rotation speed of the polishing tool is 2000 to 20,000 rpm.
In particular, it is preferably 5000 to 8000. Preferably, the polishing means is pressed against the workpiece with a pressing force of 100 to 300 g / cm 2 , especially 180 to 220 g / cm 2 . When the workpiece is a substantially disc-shaped semiconductor wafer, the polishing means has a disc shape, and the outer diameter of the semiconductor wafer and the outer diameter of the polishing means are substantially the same, and the center axis of the semiconductor wafer is It is preferable that the polishing means is positioned so as to be displaced from the center axis of the polishing means by 1/3 to 1/2 of the radius of the semiconductor wafer. Preferably, the polishing tool is perpendicular to the rotation center axis and perpendicular to the direction of displacement between the center axis of the semiconductor wafer and the center axis of the polishing means, relative to the chuck means. Reciprocating movement. The polishing means has an amplitude equal to or somewhat larger than the diameter of the semiconductor wafer, and is 30 to 6 mm.
It is preferable to be able to reciprocate at a speed of one reciprocation in 0 seconds.
【０００８】本発明の他の局面によれば、上記第二の技
術的課題を達成する研削・研磨機として、半導体ウエー
ハの裏面を研削し、次いで研磨するための研削・研磨機
にして、間欠的に回転せしめられるターンテーブルと、
該ターンテーブルに回転自在に装着された少なくとも１
個のチャック手段と、少なくとも１個の研削装置と、研
磨装置とを具備し、研削し研磨すべき半導体ウエーハは
その裏面を露呈せしめた状態で該チャック手段上に保持
され、該ターンテーブルが間欠的に回転せしめられるこ
とによって、該チャック手段が少なくとも１個の研削域
と研磨域に順次に位置せしめられ、該研削装置は研削工
具を含み、該研削域に位置せしめられている該チャック
手段に保持されている半導体ウエーハの裏面に、該研削
工具が作用せしめられて半導体ウエーハの裏面が研削さ
れ、該研磨装置は回転自在に装着された研磨工具を含
み、該研磨工具はフェルト中に砥粒を分散せしめて構成
された研磨手段を有し、該研磨域に位置せしめらている
該チャック手段が回転せしめられると共に該研磨工具が
回転せしめられ、該チャック手段に保持されている半導
体ウエーハの裏面に該研磨手段が押圧せしめられて、半
導体ウエーハの裏面が研磨される、ことを特徴とする研
削・研磨機が提供される。According to another aspect of the present invention, as a grinding / polishing machine for achieving the second technical problem, an intermittent grinding / polishing machine for grinding the back surface of a semiconductor wafer and then polishing the semiconductor wafer is provided. A turntable that can be rotated
At least one rotatably mounted on the turntable
A semiconductor wafer to be ground and polished is held on the chuck means with its back surface exposed, and the turntable is intermittently mounted. Rotating, the chuck means is sequentially located in at least one grinding zone and a polishing zone, the grinding device including a grinding tool and the chucking means being located in the grinding zone. The grinding tool is applied to the back surface of the held semiconductor wafer to grind the back surface of the semiconductor wafer, and the polishing apparatus includes a rotatably mounted polishing tool, and the polishing tool includes abrasive grains in felt. And a polishing means configured to disperse, the chuck means positioned in the polishing area is rotated and the polishing tool is rotated, The polishing unit on the back surface of the semiconductor wafer held by the jack means is made to press the back surface of the semiconductor wafer is polished, grinding and polishing machines are provided, characterized in that.
【０００９】更に、該研磨域に位置せしめられた該チャ
ック手段に保持されている半導体ウエーハの裏面に洗浄
液を噴射するための洗浄手段と、該研磨域に位置せしめ
られた該チャック手段に保持されている半導体ウエーハ
の裏面に空気を噴射する乾燥手段とを具備するのが好適
である。Further, cleaning means for spraying a cleaning liquid onto the back surface of the semiconductor wafer held by the chuck means positioned in the polishing area, and held by the chuck means positioned in the polishing area. Drying means for injecting air onto the back surface of the semiconductor wafer.
【００１０】[0010]
【発明の実施の形態】以下、本発明の好適実施形態につ
いて、添付図面を参照して更に詳細に説明する。Preferred embodiments of the present invention will be described below in more detail with reference to the accompanying drawings.
【００１１】図１及び図２は、本発明に従って構成され
た研磨装置に使用される研磨工具の好適実施形態を図示
している。全体を番号２で示す図示の研磨工具は、支持
部材４と研磨手段６とから構成されている。支持部材４
はアルミニウムの如き適宜の金属から形成されているの
が好都合であり、円板形状であって平坦な円形支持面即
ち下面を有する。図１に図示する如く、支持部材４には
その上面から下方に延びる盲ねじ孔７が、周方向に間隔
をおいて複数個（図示の場合には４個）形成されてい
る。研磨手段６も円板形状であり、支持部材４の外径と
研磨手段６の外径は実質上同一である。研磨手段６はエ
ポキシ樹脂系接着剤の如き適宜の接着剤によって支持部
材４の下面（即ち平坦な円形支持面）に接合されてい
る。FIGS. 1 and 2 show a preferred embodiment of a polishing tool used in a polishing apparatus constructed according to the present invention. The illustrated polishing tool, generally designated by reference numeral 2, includes a support member 4 and polishing means 6. Support member 4
Is conveniently formed of a suitable metal, such as aluminum, and has a disk-like shape and a flat circular support surface or lower surface. As shown in FIG. 1, the support member 4 has a plurality (four in the illustrated case) of blind screw holes 7 extending downward from the upper surface thereof at intervals in the circumferential direction. The polishing means 6 also has a disk shape, and the outer diameter of the support member 4 and the outer diameter of the polishing means 6 are substantially the same. The polishing means 6 is joined to the lower surface of the support member 4 (that is, a flat circular support surface) by an appropriate adhesive such as an epoxy resin adhesive.
【００１２】研磨手段６は、フェルトとこのフェルト中
に分散せしめられた多数の砥粒とから構成されているこ
とが重要である。フェルトは密度が０．２０ｇ／ｃｍ３
以上、特に０．４０ｇ／ｃｍ３以上であり、硬度が３０
以上、特に５０以上であることが重要である。本明細書
において使用する語句「硬度」は、ＪＩＳ規格Ｋ６２５
３の５（デュロメータ硬さ試験）に従って測定される硬
さを意味する。密度及び硬度が過小になると、所望研磨
効率及び研磨品質を達成することができない。フェルト
は羊毛から構成されたものに限定されることなく、ポリ
エステル、ポリプロピレン、耐熱ナイロン、ポリエステ
ル、アクリル、レーヨン、ケプラーの如き適宜の合成繊
維、シリカ、ガラスの如き耐炎化繊維、綿、麻の如き天
然繊維から構成されたフェルトを使用することができ
る。しかしながら、研磨効率及び研磨品質の点から９０
％以上の羊毛を含むフェルト、特に１００％羊毛である
フェルトが好適である。フェルト中に分散せしめられる
砥粒量は、０．０５乃至１，００ｇ／ｃｍ３、特に０．
２０乃至０．７０ｇ／ｃｍ３、であるのが好適である。It is important that the polishing means 6 comprises a felt and a large number of abrasive grains dispersed in the felt. The felt has a density of 0.20 g / cm 3
Or more, especially 0.40 g / cm 3 or more, and hardness of 30
It is important that the number is 50 or more, especially. The term “hardness” used herein is based on JIS K625.
3-5 means hardness measured according to durometer hardness test. If the density and hardness are too low, the desired polishing efficiency and polishing quality cannot be achieved. Felts are not limited to those made of wool, but appropriate synthetic fibers such as polyester, polypropylene, heat-resistant nylon, polyester, acrylic, rayon, and Kepler, oxidized fibers such as silica and glass, cotton, and hemp. Felt composed of natural fibers can be used. However, in terms of polishing efficiency and polishing quality, 90
Felts containing more than 100% wool, especially felts that are 100% wool, are preferred. The amount of the abrasive particles dispersed in the felt is 0.05 to 1,000 g / cm 3 , particularly 0.1 g / cm 3 .
It is preferably 20 to 0.70 g / cm 3 .
【００１３】フェルト中に分散せしめられた砥粒は、
０．０１乃至１００μm の粒径を有するものであるのが
好適である。砥粒は、シリカ、アルミナ、ホルステライ
ト、ステアタイト、ムライト、立方晶窒化硼素、ダイヤ
モンド、窒化珪素、炭化珪素、炭化硼素、炭酸バリウ
ム、炭酸カルシウム、酸化鉄、酸化マグネシウム、酸化
ジルコニア、酸化セリウム、酸化クロム、酸化錫、酸化
チタンのいずれかから形成されたものでよい。必要に応
じて、２種乃至３種以上の砥粒をフェルト中に分散せし
めることもできる。フェルト中に砥粒を適宜に分散せし
めるためには、例えば、適宜の液体中に砥粒を混入し、
かかる液体をフェルトに含浸せしめる、或いはフェルト
の製造工程中にフェルト原料繊維中に砥粒を適宜に混入
することができる。フェルト中に砥粒を適宜に分散せし
めた後に、フェルトに適宜の液状接着剤、例えばフェノ
ール樹脂系接着液又はエポキシ樹脂系接着剤、を含浸せ
しめ、かかる接着剤によってフェルト中に砥粒を結合す
ることができる。The abrasive grains dispersed in the felt are:
Preferably, it has a particle size of 0.01 to 100 μm. Abrasive grains are silica, alumina, forsterite, steatite, mullite, cubic boron nitride, diamond, silicon nitride, silicon carbide, boron carbide, barium carbonate, calcium carbonate, iron oxide, magnesium oxide, zirconia, cerium oxide, It may be formed from any of chromium oxide, tin oxide, and titanium oxide. If necessary, two to three or more abrasive grains can be dispersed in the felt. In order to appropriately disperse the abrasive grains in the felt, for example, mix the abrasive grains in an appropriate liquid,
The felt can be impregnated with the liquid, or abrasive grains can be appropriately mixed into the felt material fibers during the felt manufacturing process. After the abrasive grains are appropriately dispersed in the felt, the felt is impregnated with an appropriate liquid adhesive, for example, a phenolic resin-based adhesive solution or an epoxy resin-based adhesive, and the abrasive grains are bound into the felt by the adhesive. be able to.
【００１４】図３に簡略に図示する如く、フェルトはシ
ートＳとして製造され、その延在方向面、即ちその表面
及び裏面、は横目面Ｈと称され、その厚さ方向面は縦目
面Ｖと称されている。図１及び図２に図示する研磨工具
２においては、研磨手段６を構成しているフェルトはシ
ートを円板形状に切り取ることによって形成されてお
り、従って研磨手段６の研磨面即ち下面８はフェルトの
横目面Ｈによって形成されている。所望ならば、フェル
トの縦目面Ｖを研磨面として使用することもできる。本
発明者等の経験によれば、フェルトの横目面Ｈを研磨面
として使用する場合に比べて、フェルトの縦目面Ｖを研
磨面として使用すると、研磨量が２０乃至３０％増大せ
しめられることが判明している。研磨品質を低下せしめ
ることなく研磨効率を増大せしめるためには、図４乃至
図７に例示する如く、研磨手段６の研磨面即ち下面をフ
ェルトの横目面Ｈと縦目面Ｖとを混在せしめて形成する
ことができる。図４に図示する研磨工具２においては、
研磨手段６の下面は、フェルトの横目面Ｈから形成され
た横目面領域８Ｈと、フェルトの縦目面Ｖから形成され
複数個の縦目面領域８Ｖとを含み、縦目面領域８Ｖは小
円形状であり横目面領域８Ｈ中に分散配置されている。
図５に図示する研磨工具２においては、研磨手段６の下
面は、中央円形横目面領域８Ｈとこの横目面領域８Ｈを
囲繞する外側環状縦目面領域８Ｖとから構成されてい
る。図６に図示する研磨工具２においては、研磨手段６
の下面は、横目面領域８Ｈと縦目面領域８Ｖとを交互に
同心状に配置して構成されている。図７に図示する研磨
工具２においては、研磨手段６の下面は、複数個のセグ
メント形状の横目面領域８Ｈと、横目面領域８Ｈ間を半
径方向に延びる複数個の縦目面領域８Ｖと、そして更に
これらの横目面領域８Ｈ及び縦目面領域８Ｖを囲繞する
外側環状縦目面領域８Ｈとを含んでいる。更に、図８に
図示する如く、研磨手段６に複数個のスリット１０を刻
設することもできる。スリット１０は同心状の配列され
た複数個の円形状及び／又は等角度間隔に配列された放
射形状でよい。As shown schematically in FIG. 3, the felt is manufactured as a sheet S, and its extending direction surface, that is, its front and rear surfaces, is called a horizontal eye surface H, and its thickness direction surface is a vertical eye surface V. It is called. In the polishing tool 2 shown in FIGS. 1 and 2, the felt constituting the polishing means 6 is formed by cutting a sheet into a disk shape. Are formed by the horizontal eye surface H. If desired, the longitudinal face V of the felt can be used as a polishing surface. According to the experience of the present inventors, when the vertical surface V of the felt is used as the polishing surface, the polishing amount can be increased by 20 to 30% as compared with the case where the horizontal surface H of the felt is used as the polishing surface. Is known. In order to increase the polishing efficiency without lowering the polishing quality, as shown in FIGS. 4 to 7, the polishing surface, that is, the lower surface of the polishing means 6 is formed by mixing the horizontal surface H and the vertical surface V of the felt. Can be formed. In the polishing tool 2 shown in FIG.
The lower surface of the polishing means 6 includes a horizontal eye surface area 8H formed from the horizontal eye surface H of the felt, and a plurality of vertical eye surface regions 8V formed from the vertical eye surface V of the felt. It has a circular shape and is distributed and arranged in the horizontal eye surface area 8H.
In the polishing tool 2 shown in FIG. 5, the lower surface of the polishing means 6 is composed of a central circular horizontal eye surface area 8H and an outer annular vertical eye surface area 8V surrounding the horizontal eye surface area 8H. In the polishing tool 2 shown in FIG.
Is formed by alternately and concentrically arranging the horizontal eye area 8H and the vertical eye area 8V. In the polishing tool 2 illustrated in FIG. 7, the lower surface of the polishing means 6 includes a plurality of segment-shaped horizontal eye surface regions 8H, a plurality of vertical eye surface regions 8V extending radially between the horizontal eye surface regions 8H, Further, an outer annular vertical eye surface area 8H surrounding the horizontal eye area 8H and the vertical eye area 8V is included. Further, as shown in FIG. 8, a plurality of slits 10 can be formed in the polishing means 6. The slits 10 may be a plurality of concentrically arranged circular shapes and / or radial shapes arranged at equal angular intervals.
【００１５】図９は、上述したとおりの研磨工具２が適
用される研磨装置と半導体ウエーハの裏面を研削するた
めの研削装置と組合せ構成した研削・研磨機を図示して
いる。図の研削・研磨機は全体を番号１２で示すハウジ
ングを具備している。このハウジング１２は、細長く延
在する直方体形状の主部１４を有する。主部１４の後端
部には実質上鉛直に上方に延びる直立壁１６が配設され
ている。そして、この直立壁１６に２個の研削装置、即
ち粗研削装置１８ａと精密研削装置１８ｂとが配設され
ている。更に詳述すると、直立壁１６の前面には２対の
案内レール１９ａ及び１９ｂが固定されている。案内レ
ール対１９ａ及び１９ｂの各々の案内レールは実質上鉛
直に延びている。案内レール対１９ａ及び１９ｂには、
夫々、滑動ブロック２０ａ及び２０ｂが鉛直方向に滑動
自在に装着されている。滑動ブロック２０ａ及び２０ｂ
の各々は２個の脚部２２ａ及び２２ｂを有し、かかる脚
部２２ａ及び２２ｂの各々が案内レール対１９ａ及び１
９ｂの各々の各レールに滑動自在に係合せしめられてい
る。直立壁１６の前面には、更に、支持部材２４ａ及び
２４ｂ並びに支持部材２６ａ及び２６ｂによって実質上
鉛直に延びるねじ軸２８ａ及び２８ｂが回転自在に装着
されている。支持部材２４ａ及び２４ｂにはパルスモー
タでよい電動モータ３０ａ及び３０ｂも装着されてお
り、かかるモータ３０ａ及び３０ｂの出力軸は夫々ねじ
軸２８ａ及び２８ｂに連結されている。滑動ブロック２
０ａ及び２０ｂの各々には後方に突出する連結部（図示
していない）が形成されており、かかる連結部には鉛直
方向に延びる貫通ねじ孔が形成されており、ねじ軸２８
ａ及び２８ｂの各々はかかるねじ孔に螺合せしめられて
いる。従って、モータ３０ａ及び３０ｂが正転せしめら
れると、滑動ブロック２０ａ及び２０ｂが下降せしめら
れ、モータ３０ａ及び３０ｂが逆転せしめられると、滑
動ブロック２０ａ及び２０ｂが上昇せしめられる。滑動
ブロック２０ａ及び２０ｂの各々には前方に突出した支
持部３２ａ及び３２ｂが形成されており、かかる支持部
３２ａ及び３２ｂの各々にはケース３４ａ及び３４ｂが
固定されている。ケース３４ａ及び３４ｂには実質上鉛
直に延びる回転軸３６ａ及び３６ｂが回転自在に装着さ
れている。ケース３４ａ及び３４ｂ内には電動モータ
（図示していない）が配設されており、かかるモータの
出力軸は回転軸３４ａ及び３４ｂに連結されている。回
転軸３４ａ及び３４ｂの下端には円板形状の装着部材３
６ａ及び３６ｂが固定され、装着部材３６ａ及び３６ｂ
には研削工具３８ａ及び３８ｂが装着されている。研削
工具３８ａ及び３８ｂの下面には円弧形状である複数個
の研削部材が配設されている。研削部材は、ダイヤモン
ド粒子をレジンボンドの如き適宜の結合剤によって結合
することによって形成されたものであるのが好都合であ
る。ケース３４ａ及び３４ｂ内に配設されている上記モ
ータが付勢されると、研削工具３８ａ及び３８ｂが高速
回転せしめられる。FIG. 9 shows a grinding / polishing machine constructed in combination with a polishing apparatus to which the polishing tool 2 as described above is applied and a grinding apparatus for grinding the back surface of a semiconductor wafer. The illustrated grinding / polishing machine includes a housing indicated by reference numeral 12 as a whole. The housing 12 has an elongated rectangular parallelepiped main part 14. An upright wall 16 extending substantially vertically upward is provided at the rear end of the main portion 14. The upright wall 16 is provided with two grinding devices, that is, a rough grinding device 18a and a precision grinding device 18b. More specifically, two pairs of guide rails 19a and 19b are fixed to the front surface of the upright wall 16. The guide rails of each of the guide rail pairs 19a and 19b extend substantially vertically. In the guide rail pair 19a and 19b,
Sliding blocks 20a and 20b are respectively mounted slidably in the vertical direction. Sliding blocks 20a and 20b
Has two legs 22a and 22b, each such leg 22a and 22b being a guide rail pair 19a and 1
9b is slidably engaged with each of the rails. Screw shafts 28a and 28b extending substantially vertically by support members 24a and 24b and support members 26a and 26b are further rotatably mounted on the front surface of the upright wall 16. Electric motors 30a and 30b, which may be pulse motors, are also mounted on the support members 24a and 24b, and the output shafts of the motors 30a and 30b are connected to screw shafts 28a and 28b, respectively. Sliding block 2
0a and 20b are each formed with a connecting portion (not shown) projecting rearward, and the connecting portion is formed with a through screw hole extending in the vertical direction.
Each of a and 28b is screwed into such a screw hole. Therefore, when the motors 30a and 30b are rotated forward, the sliding blocks 20a and 20b are lowered, and when the motors 30a and 30b are rotated reversely, the sliding blocks 20a and 20b are raised. Support portions 32a and 32b projecting forward are formed on each of the sliding blocks 20a and 20b, and cases 34a and 34b are fixed to each of the support portions 32a and 32b. Rotating shafts 36a and 36b extending substantially vertically are rotatably mounted on the cases 34a and 34b. An electric motor (not shown) is provided in the cases 34a and 34b, and the output shaft of the motor is connected to the rotating shafts 34a and 34b. At the lower ends of the rotating shafts 34a and 34b, a disc-shaped mounting member 3 is provided.
6a and 36b are fixed, and the mounting members 36a and 36b
Are equipped with grinding tools 38a and 38b. A plurality of arc-shaped grinding members are provided on the lower surfaces of the grinding tools 38a and 38b. The grinding member is advantageously formed by bonding diamond particles with a suitable binder such as a resin bond. When the motor provided in the cases 34a and 34b is energized, the grinding tools 38a and 38b are rotated at a high speed.
【００１６】図９を参照して説明を続けると、ハウジン
グ１２の主部１４における後半部上面には、ターンテー
ブル４２が配設されている。このターンテーブル４２は
実質上鉛直に延びる中心軸線を中心として回転自在に装
着されている。ターンテーブル４２には適宜の電動モー
タ（図示していない）が駆動連結されており、後に更に
言及する如く、ターンテーブル４２は１２０度毎間欠的
に回転せしめられる。ターンテーブル４２には周方向に
等角度間隔をおいて３個のチャック手段４４が配設され
ている。図示のチャック手段４４は実質上鉛直に延びる
中心軸線を中心として回転自在に装着された多孔性円板
から構成されている。チャック手段４４には適宜の電動
モータ（図示していない）が駆動連結されており、チャ
ック手段４４は５乃至１００ｒｐｍでよい回転速度で回
転せしめられる。チャック手段４４には真空源（図示し
ていない）が選択的に連通せしめられ、後に更に言及す
る如く、チャック手段４４上に載置された半導体ウエー
ハがチャック手段４４に真空吸着される。ターンテーブ
ル４２が１２０度毎間欠的に回転せしめられることによ
って、チャック手段４４の各々は、搬入及び搬出域４
６、粗研削域４８及び精密研削域５０に順次に位置せし
められる。後の説明から明確に理解されるとおり、搬入
及び搬出域４６は研磨域としても機能する。Referring to FIG. 9, a turntable 42 is arranged on the upper surface of the rear half of the main part 14 of the housing 12. The turntable 42 is mounted rotatably about a central axis extending substantially vertically. An appropriate electric motor (not shown) is drivingly connected to the turntable 42, and the turntable 42 is intermittently rotated every 120 degrees as will be described later. The turntable 42 is provided with three chuck means 44 at equal angular intervals in the circumferential direction. The illustrated chuck means 44 is constituted by a porous disk mounted rotatably about a central axis extending substantially vertically. An appropriate electric motor (not shown) is drivingly connected to the chuck means 44, and the chuck means 44 is rotated at a rotation speed which may be 5 to 100 rpm. A vacuum source (not shown) is selectively communicated with the chuck means 44, and a semiconductor wafer mounted on the chuck means 44 is vacuum-sucked to the chuck means 44, as will be further described later. As the turntable 42 is intermittently rotated every 120 degrees, each of the chuck means 44 is moved into and out of the loading and unloading area 4.
6. The rough grinding area 48 and the precision grinding area 50 are sequentially located. As will be clearly understood from the following description, the loading and unloading area 46 also functions as a polishing area.
【００１７】ハウジング１２の主部１４における前半部
上面には、カセット搬入域５２、カセット搬出域５４、
搬送機構５６、半導体ウエーハ受入手段５８及び洗浄手
段６０が配設されている。ハウジング１２の主部１４の
中間部上面には、搬送機構６２及び６４が配設されてい
る。カセット搬入域５２上には、裏面を研削・研磨すべ
き複数個の半導体ウエーハＷを収容したカセットＣが載
置される。カセット搬出域５４には、裏面が研削・研磨
された半導体ウエーハＷを収容するためのカセットＣが
載置される。搬送機構５６は、カセット搬入域５２上に
載置されているカセットＣから半導体ウエーハＷを１枚
毎搬出し、表裏を反転せしめて半導体ウエーハ受入手段
５８上に載置する。搬送機構６２は、裏面を上方に向け
て半導体ウエーハ受入手段５８上に載置されている半導
体ウエーハＷを、搬入・搬出域４６に位置せしめられて
いるチャック手段４４上に搬入する。On the upper surface of the front half of the main portion 14 of the housing 12, a cassette carrying-in area 52, a cassette carrying-out area 54,
A transport mechanism 56, a semiconductor wafer receiving means 58, and a cleaning means 60 are provided. Transport mechanisms 62 and 64 are provided on the upper surface of the middle part of the main part 14 of the housing 12. A cassette C containing a plurality of semiconductor wafers W whose back surfaces are to be ground and polished is placed on the cassette carry-in area 52. A cassette C for accommodating a semiconductor wafer W whose back surface is ground and polished is placed in the cassette carry-out area 54. The transport mechanism 56 carries out the semiconductor wafers W one by one from the cassette C placed on the cassette carrying-in area 52, turns over the semiconductor wafers W, and places them on the semiconductor wafer receiving means 58. The transport mechanism 62 transports the semiconductor wafer W placed on the semiconductor wafer receiving means 58 with the rear surface facing upward onto the chuck means 44 positioned in the loading / unloading area 46.
【００１８】裏面を上方に向けて露呈せしめた状態でチ
ャック手段４４上に搬入された半導体ウエーハＷは、タ
ーンテーブル４２の間欠的回転によってチャック手段４
４と共に粗研削域４８に位置せしめられる。粗研削域４
８においては、半導体ウエーハＷを保持したチャック手
段４４が回転せしめられると共に、研削工具３８ａが高
速回転せしめられる。そして、研削工具３８ａが半導体
ウエーハＷの裏面に押圧せしめられて漸次下降せしめら
れ、これによって半導体ウエーハＷの裏面が研削され
る。研削工具３８ａの中心軸線とチャック手段４４の中
心軸線とは所定距離だけ変位せしめられており、半導体
ウエーハＷの裏面全体に渡って充分均一に研削工具３８
ａが作用せしめられる。粗研削域４８において粗研削さ
れた半導体ウエーハＷは、ターンテーブル４２の間欠的
回転によってチャック手段４４と共に精密研削域５０に
位置せしめられる。そして、研削工具３８ｂによって半
導体ウエーハＷの裏面が精密研削される。研削工具３８
ｂによる精密研削様式は、研削工具３８ａによる粗研削
様式と同様である。精密研削域５０において精密研削さ
れた半導体ウエーハＷは、ターンテーブル４２の間欠的
回転によってチャック手段４４と共に搬入・搬出域４６
に位置せしめられる。そして、この搬入・搬出域４６に
おいては、後に更に詳述するとおりにして、半導体ウエ
ーハＷの裏面が研磨される。The semiconductor wafer W loaded onto the chuck means 44 with the back surface exposed upward is rotated by the intermittent rotation of the turntable 42 so that the chuck means 4 is rotated.
4 is located in the coarse grinding area 48. Rough grinding area 4
At 8, the chuck means 44 holding the semiconductor wafer W is rotated, and the grinding tool 38a is rotated at a high speed. Then, the grinding tool 38a is pressed against the back surface of the semiconductor wafer W and is gradually lowered, whereby the back surface of the semiconductor wafer W is ground. The center axis of the grinding tool 38a and the center axis of the chuck means 44 are displaced by a predetermined distance, and are sufficiently uniform over the entire back surface of the semiconductor wafer W.
a is acted upon. The semiconductor wafer W roughly ground in the rough grinding area 48 is positioned in the precision grinding area 50 together with the chuck means 44 by intermittent rotation of the turntable 42. Then, the back surface of the semiconductor wafer W is precisely ground by the grinding tool 38b. Grinding tool 38
The precision grinding mode by b is the same as the coarse grinding mode by the grinding tool 38a. The semiconductor wafer W precision ground in the precision grinding area 50 is carried in / out with the chuck means 44 by the intermittent rotation of the turntable 42.
It is located in. Then, in the carry-in / out area 46, the back surface of the semiconductor wafer W is polished as described in further detail later.
【００１９】次いで、搬送機構６４は、搬入・搬出域４
６に位置せしめられているチャック手段４４上の半導体
ウエーハＷを洗浄手段６０に搬送する。洗浄手段６０
は、半導体ウエーハＷを高速回転せしめながら純水でよ
い洗浄液を噴射し、半導体ウエーハＷを洗浄し、乾燥す
る。搬送機構５６は、洗浄し、乾燥された半導体ウエー
ハＷを再び反転せしめて表面が上方に向く状態にせしめ
て、カセット搬出域５４上に載置されているカセットＣ
内に搬入する。カセット搬入域５２に載置されているカ
セットＣ内の半導体ウエーハＷが全て搬出されると、か
かるカセットＣが裏面を研削・研磨すべき半導体ウエー
ハＷを収容した次のカセットＣに交換される。また、カ
セット搬出域５４に載置されているカセットＣに所定数
の半導体ウエーハＷが収納されると、かかるカセットＣ
が搬出されて空のカセットＣが載置される。Next, the transport mechanism 64 moves the loading / unloading area 4
The semiconductor wafer W on the chuck means 44 positioned at 6 is transferred to the cleaning means 60. Cleaning means 60
Cleans and dries the semiconductor wafer W by rotating the semiconductor wafer W at a high speed and injecting a cleaning solution that is preferably pure water. The transport mechanism 56 reverses the washed and dried semiconductor wafer W again so that the surface thereof faces upward, and the cassette C placed on the cassette unloading area 54
Carry in. When all the semiconductor wafers W in the cassette C placed in the cassette carry-in area 52 are unloaded, the cassette C is replaced with the next cassette C containing the semiconductor wafer W whose back surface is to be ground and polished. When a predetermined number of semiconductor wafers W are stored in the cassette C placed in the cassette carrying-out area 54, the cassette C
Is carried out, and an empty cassette C is placed.
【００２０】而して、図示の研削・研磨機における上述
したとおりの構成及び作用、即ち搬入・搬出域４６にお
ける半導体ウエーハＷの裏面の研磨に関する構成及び作
用以外の構成及び作用は、例えば株式会社ディスコから
商品名「ＤＦＧ８４１」として販売されている研削機に
おける構成及び作用と実質上同一であり、既に当業者に
は周知のものである。それ故に、これらの構成及び作用
の詳細な説明は本明細書においては省略する。The configuration and operation of the grinding / polishing machine as shown above, that is, the configuration and operation other than the configuration and operation relating to the polishing of the back surface of the semiconductor wafer W in the loading / unloading area 46 are described in, for example, The configuration and operation of the grinding machine sold by Disco under the trade name "DFG841" are substantially the same as those already known to those skilled in the art. Therefore, a detailed description of these structures and operations will be omitted in this specification.
【００２１】図示の研削・研磨機においては、半導体ウ
エーハＷの裏面を研削するための粗研削装置１８ａ及び
精密研削装置１８ｂに加えて、研削された半導体ウエー
ハＷの裏面を研磨するための研磨装置６６が配設されて
いる。図９と共に図１０を参照して説明すると、ハウジ
ング１２の主部１４の後半部上面の両側縁部には、実質
上鉛直に上方に延びる支柱６７及び６８が配設されてい
る。そして、かかる支柱６７及び６８間には実質上水平
に延びる案内レール７０が固定されており、案内レール
７０には滑動ブロック７２が滑動自在に装着されてい
る。図９と共に図１０を参照することによって明確に理
解される如く、案内レール７０は矩形状の横断面形状を
有し、滑動ブロック７２には案内レール７０が挿通せし
められている矩形状の横断面形状を有する開口７４が形
成されている。支柱６７及び６８間には、更に、実質上
水平に延びるねじ軸７６が回転自在に装着されている。
支柱６８には電動モータ７８が装着されており、この電
動モータ７８の出力軸はねじ軸７６に連結されている。
一方、滑動ブロック７２には実質上水平に延びる貫通ね
じ孔８０が形成されており、ねじ軸７６はねじ孔８０に
螺合せしめられている。従って、電動モータ７８が正転
せしめられると滑動ブロック７２が矢印８２で示す方向
に往動せしめられ、電動モータ７２が逆転せしめられる
と滑動ブロック７２が矢印８４で示す方向に復動せしめ
られる。In the illustrated grinding / polishing machine, in addition to a rough grinding device 18a and a precision grinding device 18b for grinding the back surface of the semiconductor wafer W, a polishing device for grinding the back surface of the ground semiconductor wafer W is provided. 66 are provided. Referring to FIG. 10 together with FIG. 9, columns 67 and 68 extending substantially vertically upward are disposed on both side edges of the upper surface of the rear half of the main portion 14 of the housing 12. A guide rail 70 extending substantially horizontally is fixed between the columns 67 and 68, and a slide block 72 is slidably mounted on the guide rail 70. As can be clearly understood by referring to FIG. 10 in conjunction with FIG. 9, the guide rail 70 has a rectangular cross-sectional shape, and the sliding block 72 has a rectangular cross-section through which the guide rail 70 is inserted. An opening 74 having a shape is formed. A screw shaft 76 extending substantially horizontally is rotatably mounted between the columns 67 and 68.
An electric motor 78 is mounted on the column 68, and the output shaft of the electric motor 78 is connected to a screw shaft 76.
On the other hand, a through screw hole 80 extending substantially horizontally is formed in the sliding block 72, and the screw shaft 76 is screwed into the screw hole 80. Therefore, when the electric motor 78 is rotated forward, the sliding block 72 is moved forward in the direction indicated by the arrow 82, and when the electric motor 72 is rotated reversely, the sliding block 72 is moved backward in the direction indicated by the arrow 84.
【００２２】図９及び図１０を参照して説明を続ける
と、滑動ブロック７２の前面には実質上鉛直に延びる案
内レール８６が形成されており、この案内レール８６に
沿って滑動自在に昇降ブロック８８が装着されている。
案内レール８６の横断面形状はは前方に向かって幅が漸
次増大する逆台形、即ち鳩尾形状であり、昇降ブロック
８８には対応した横断面形状を有する被案内溝９０が形
成されており、案内レール８６に案内溝９０が係合せし
められている。図１０に明確に図示する如く、滑動ブロ
ック７２の案内レール８６には実質上鉛直に延びる貫通
穴９２が形成されている。そして、この貫通穴９２には
空気圧シリンダ機構９４のシリンダ９６が固定されてい
る。昇降ブロック８８の下端部には後方に突出する突出
部９８が形成されており、かかる突出部９８には開口１
００が形成されている。空気圧シリンダ機構９４のピス
トン１０２は滑動ブロック７２から下方に延出し、昇降
ブロック８８の突出部９８に形成されている開口１００
を通って下方に延びている。ピストン１０２の下端に
は、開口１００よりも大きいフランジ１０４が固定され
ている。昇降ブロック８８内には電動モータ１０６が固
定されており、かかる電動モータ１０６の出力軸には実
質上鉛直に延びる回転軸１０８が連結されている。昇降
ブロック８８から下方に延出せしめられている回転軸１
０８の下端には装着部材１１０が固定されている、そし
て、この装着部材１１０の下面に図１及び図２に図示す
る研磨工具２が固定されている。更に詳述すると、装着
部材１１０は研磨工具２の支持部材４の外径と実質上同
一の外径を有する円板形状であり、周方向に間隔をおい
て複数個（図示の場合は４個）の貫通孔が形成されてい
る。装着部材１１０に形成されている貫通孔を通して、
研磨工具２の支持部材４に形成されている盲ねじ孔８に
止めねじ１１４を螺合することによって、装着部材１１
０の下面に研磨工具２が固定されている。図示の実施形
態においては、更に、ハウジング１２の主部１４には、
搬入・搬出域４６に位置するチャック手段４４上に保持
されている半導体ウエーハＷに向けて純水でよい洗浄液
を噴射する洗浄手段１１６と、搬入・搬出域４６に位置
するチャック手段４４上に保持されている半導体ウエー
ハＷに向けて空気、好ましくは加熱空気、を噴射する乾
燥手段１１８が配設されている。Referring to FIGS. 9 and 10, a guide rail 86 extending substantially vertically is formed on the front surface of the sliding block 72, and the elevating block is slidable along the guide rail 86. 88 are attached.
The cross-sectional shape of the guide rail 86 is an inverted trapezoidal shape in which the width gradually increases toward the front, that is, a dovetail shape. The elevating block 88 is formed with a guided groove 90 having a corresponding cross-sectional shape. A guide groove 90 is engaged with the rail 86. As clearly shown in FIG. 10, the guide rail 86 of the sliding block 72 is formed with a substantially vertically extending through hole 92. The cylinder 96 of the pneumatic cylinder mechanism 94 is fixed to the through hole 92. A projecting portion 98 projecting rearward is formed at a lower end portion of the lifting block 88.
00 is formed. The piston 102 of the pneumatic cylinder mechanism 94 extends downward from the sliding block 72 and has an opening 100 formed in a protrusion 98 of the lifting block 88.
Extending downward through. A flange 104 larger than the opening 100 is fixed to a lower end of the piston 102. An electric motor 106 is fixed in the lifting block 88, and a rotating shaft 108 that extends substantially vertically is connected to an output shaft of the electric motor 106. The rotating shaft 1 extending downward from the lifting block 88
A mounting member 110 is fixed to the lower end of the mounting member 08, and the polishing tool 2 shown in FIGS. 1 and 2 is fixed to the lower surface of the mounting member 110. More specifically, the mounting member 110 has a disk shape having an outer diameter substantially the same as the outer diameter of the support member 4 of the polishing tool 2, and a plurality of the mounting members 110 (four in the illustrated case) are spaced apart in the circumferential direction. ) Is formed. Through a through hole formed in the mounting member 110,
By screwing a set screw 114 into the blind screw hole 8 formed in the support member 4 of the polishing tool 2, the mounting member 11
The polishing tool 2 is fixed to the lower surface of the “0”. In the illustrated embodiment, the main part 14 of the housing 12 further includes:
Cleaning means 116 for injecting a cleaning liquid, which may be pure water, toward the semiconductor wafer W held on the chuck means 44 located in the loading / unloading area 46, and holding on the chuck means 44 located in the loading / unloading area 46 Drying means 118 for injecting air, preferably heated air, toward the semiconductor wafer W is provided.
【００２３】研磨装置６６の作用を要約して説明する
と、ターンテーブル４２が間欠的に回転せしめられる
時、そしてまた搬入・搬出域４６に位置せしめられてい
るチャック手段４４上に半導体ウエーハＷが搬入される
時及びチャック手段４４から半導体ウエーハＷが搬出さ
れる時には、空気圧シリンダ機構９４のピストン１０２
が図１０に二点鎖線で示す位置まで収縮せしめられ、ピ
ストン１０２の先端に配設されたフランジ１０４が昇降
ブロック８８の突出部９８に作用することによって昇降
ブロック８８が図１０に二点鎖線で示す上昇位置まで上
昇せしめられる。昇降ブロック８８が上昇位置に位置せ
しめられると、研磨手段６６の研磨工具２は搬入・搬出
域４６に位置するチャック手段４４及びその上に保持さ
れている半導体ウエーハＷから上方に離隔せしめられ
る。ターンテーブル４２が間欠的に回転せしめられて、
裏面が粗研削域４８において粗研削され精密研削域５０
において精密研削された半導体ウエーハＷを保持したチ
ャック手段４４が搬入・搬出域４６に位置せしめられる
と、洗浄手段１１６が半導体ウエーハＷの裏面に洗浄液
を噴射し、半導体ウエーハＷの裏面から研削屑を排出せ
しめる。次いで、乾燥手段１１８が半導体ウエーハＷの
裏面に空気を噴射して乾燥せしめる。In summary, the operation of the polishing apparatus 66 will be described. When the turntable 42 is rotated intermittently, and again, the semiconductor wafer W is loaded onto the chuck means 44 located in the loading / unloading area 46. When the semiconductor wafer W is carried out and when the semiconductor wafer W is unloaded from the chuck means 44, the piston 102 of the pneumatic cylinder mechanism 94 is
10 is contracted to the position shown by the two-dot chain line in FIG. 10, and the flange 104 disposed at the tip of the piston 102 acts on the protrusion 98 of the elevating block 88. It is raised to the rising position shown. When the lifting block 88 is positioned at the raised position, the polishing tool 2 of the polishing means 66 is separated upward from the chuck means 44 located in the loading / unloading area 46 and the semiconductor wafer W held thereon. The turntable 42 is intermittently rotated,
The back side is roughly ground in the rough grinding area 48 and the precision grinding area 50
When the chuck means 44 holding the precision-ground semiconductor wafer W is positioned in the carry-in / carry-out area 46, the cleaning means 116 injects a cleaning liquid onto the back surface of the semiconductor wafer W to remove grinding dust from the back surface of the semiconductor wafer W. Let it drain. Next, the drying means 118 blows air on the back surface of the semiconductor wafer W to dry it.
【００２４】しかる後に、空気圧シリンダ機構９４のピ
ストン１０２が図１０に実線で示す位置まで伸張せしめ
られる。かくすると、ピストン１０２の先端に配設され
ているフランジ１０４が昇降ブロック８８の突出部９８
から下方に離隔せしめられ、昇降ブロック８８及びこれ
に装着されている電動モータ１０６、回転軸１０８、装
着部材１１０及び研磨工具２の自重によって研磨工具２
の研磨手段６が半導体ウエーハＷの裏面に押圧される。
所望ならば、昇降ブロック８８及びこれに装着された種
々の構成要素の自重に加えて又はこれに代えて、例えば
圧縮ばねの如き適宜の弾性偏倚手段を配設し、かかる弾
性偏倚手段によって研磨手段６を半導体ウエーハＷの裏
面に押圧せしめることもできる。研磨工具２の研磨手段
６を半導体ウエーハＷの裏面に押圧せしめると同時に或
いはその前又は後に、チャック手段４４が回転せしめら
れると共にモータ１０６が付勢されて研磨工具２が回転
せしめられる。そしてまた、モータ７２が正転と逆転と
を繰り返し、滑動ブロック７２が矢印８２及び８４で示
す方向に往復動せしめられ、従って研磨工具２が矢印８
２及び８４で示す方向に往復動せしめられる。かくして
半導体ウエーハＷの裏面が研磨される。Thereafter, the piston 102 of the pneumatic cylinder mechanism 94 is extended to the position shown by the solid line in FIG. As a result, the flange 104 provided at the tip of the piston 102 is
From the lifting block 88 and the electric motor 106, the rotating shaft 108, the mounting member 110 and the polishing tool 2 attached thereto.
Is pressed against the back surface of the semiconductor wafer W.
If desired, suitable resilient biasing means, such as, for example, compression springs, may be provided in addition to or instead of the weight of the elevating block 88 and the various components mounted thereon, and the polishing means may be provided by such resilient biasing means. 6 can be pressed against the back surface of the semiconductor wafer W. At the same time, or before or after pressing the polishing means 6 of the polishing tool 2 against the back surface of the semiconductor wafer W, the chuck means 44 is rotated and the motor 106 is energized to rotate the polishing tool 2. Further, the motor 72 repeats the forward rotation and the reverse rotation, and the sliding block 72 is reciprocated in the directions shown by arrows 82 and 84, and accordingly, the polishing tool 2
It is reciprocated in the directions indicated by 2 and 84. Thus, the back surface of the semiconductor wafer W is polished.
【００２５】本発明者等の経験によれば、上述したとお
りにして半導体ウエーハＷの裏面を研磨工具２によって
研磨する際には、チャック手段４４を比較的低速で、好
ましくは５乃至２００ｒｐｍ、特に１０乃至３０ｒｐｍ
の回転速度で回転せしめ、研磨工具２は比較的高速で、
好ましくは２０００乃至２００００ｒｐｍ、特に５００
０乃至８０００ｒｐｍの回転速度で回転せしめるのが好
適である。チャック手段４４の回転方向と研磨工具２の
回転方向とは同一でもよいが、相互に逆方向であるのが
好都合である。研磨工具２の矢印８２及び８４で示す方
向における往復動に関しては、半導体ウエーハＷの直径
と同一乃至これより幾分大きい振幅で３０乃至９０秒間
に研磨工具２を一往復せしめることができる。半導体ウ
エーハＷの裏面に対する研磨工具２の押圧力は１００乃
至３００ｇ／ｃｍ２、特に１８０乃至２２０ｇ／ｃｍ２
であるのが好適である。図１０に図示する如く、研磨工
具２の研磨手段６の直径は半導体ウエーハＷの直径と略
同一でよい。半導体ウエーハＷの裏面の全体に渡って研
磨手段６の全体が充分均一に作用するようになすため
に、チャック手段４４上に保持されている半導体ウエー
ハＷの中心軸線と研磨手段６の中心軸線とは、実質上水
平な方向（即ちチャック手段４４の回転中心軸線及び研
磨工具２の回転中心軸線に対して垂直な方向）で且つ研
磨工具２の矢印８２及び８４で示す往復動方向に対して
垂直な方向に、研磨手段６の半径の１／３乃至１／２程
度相互に変位せしめられているのが好適である。According to the experience of the present inventors, when the back surface of the semiconductor wafer W is polished by the polishing tool 2 as described above, the chuck means 44 is operated at a relatively low speed, preferably 5 to 200 rpm, particularly 10 to 30 rpm
The polishing tool 2 is rotated at a relatively high speed.
Preferably 2000 to 20000 rpm, especially 500
It is preferable to rotate at a rotation speed of 0 to 8000 rpm. The rotation direction of the chuck means 44 and the rotation direction of the polishing tool 2 may be the same, but are preferably opposite to each other. With respect to the reciprocation of the polishing tool 2 in the directions indicated by arrows 82 and 84, the polishing tool 2 can make one reciprocation in 30 to 90 seconds with an amplitude equal to or slightly larger than the diameter of the semiconductor wafer W. The pressing force of the polishing tool 2 against the back surface of the semiconductor wafer W is 100 to 300 g / cm 2 , particularly 180 to 220 g / cm 2.
It is preferred that As shown in FIG. 10, the diameter of the polishing means 6 of the polishing tool 2 may be substantially the same as the diameter of the semiconductor wafer W. In order for the entire polishing means 6 to operate sufficiently uniformly over the entire back surface of the semiconductor wafer W, the central axis of the semiconductor wafer W held on the chuck means 44 and the central axis of the polishing means 6 Are perpendicular to the substantially horizontal direction (that is, the direction perpendicular to the rotation center axis of the chuck means 44 and the rotation center axis of the polishing tool 2) and the reciprocating direction of the polishing tool 2 indicated by arrows 82 and 84. It is preferable that they are mutually displaced about 程度 to の of the radius of the polishing means 6 in any direction.
【００２６】半導体ウエーハＷの裏面を粗研削装置１８
ａで粗研削し、精密研削装置１８ｂで精密研削すると、
当業者には周知の如く、半導体ウエーハＷの裏面には所
謂ソーマークが生成され、そしてまた裏面から０．２μ
m 程度の深さ渡って所謂加工歪（かかる加工歪は透過型
電子顕微鏡によって観察することによって明確に把握す
ることができる）が生成される。然るに、研削の後に半
導体ウエーハＷの裏面を本発明に従って構成された研磨
工具２によって研磨することによって１．０μm 程度の
深さに渡って表層を除去すると、半導体ウーエハＷの裏
面を鏡面にせしめることができ、そしてまた加工歪を実
質上消失せしめることができる。The back surface of the semiconductor wafer W is rough-ground
When coarse grinding is performed by a and precision grinding is performed by the precision grinding device 18b,
As is well known to those skilled in the art, a so-called saw mark is formed on the back surface of the semiconductor wafer W, and 0.2 μm from the back surface.
A so-called processing strain is generated over a depth of about m (the processing strain can be clearly grasped by observing with a transmission electron microscope). However, after grinding, the back surface of the semiconductor wafer W is polished by the polishing tool 2 constructed according to the present invention to remove the surface layer over a depth of about 1.0 μm, so that the back surface of the semiconductor wafer W becomes a mirror surface. And processing strain can be substantially eliminated.
【００２７】[0027]
【発明の効果】本発明の研磨装置によれば、産業廃棄物
として処理すべき物質を大量に生成せしめることなく、
半導体ウエーハの裏面を高研磨効率及び高研磨品質で研
磨して、そこに存在していた加工歪を除去することがで
きる。According to the polishing apparatus of the present invention, the substance to be treated as industrial waste is not generated in a large amount,
The back surface of the semiconductor wafer can be polished with high polishing efficiency and high polishing quality, and the processing strain existing there can be removed.
【００２８】また、本発明の研削・研磨機によれば、半
導体ウエーハの裏面を研削し、次いで半導体ウエーハの
裏面を高研磨効率及び高研磨品質で研磨し研削に起因し
て生成された加工歪を除去することができる。Further, according to the grinding / polishing machine of the present invention, the back surface of the semiconductor wafer is ground, and then the back surface of the semiconductor wafer is polished with high polishing efficiency and high polishing quality. Can be removed.
【図１】本発明に従って構成された研磨装置に使用され
る研磨工具の好適実施形態を示す斜面図。FIG. 1 is a perspective view showing a preferred embodiment of a polishing tool used in a polishing apparatus configured according to the present invention.
【図２】図１の研磨工具を倒立状態で示す斜面図。FIG. 2 is a perspective view showing the polishing tool of FIG. 1 in an inverted state.
【図３】フェルトの一部を示す斜面図。FIG. 3 is a perspective view showing a part of a felt;
【図４】本発明に従って構成された研磨装置に使用され
る研磨工具の他の実施形態を倒立状態で示す斜面図。FIG. 4 is a perspective view showing another embodiment of the polishing tool used in the polishing apparatus configured according to the present invention in an inverted state.
【図５】本発明に従って構成された研磨装置に使用され
る研磨工具の更に他の実施形態を倒立状態で示す斜面
図。FIG. 5 is a perspective view showing another embodiment of the polishing tool used in the polishing apparatus configured according to the present invention in an inverted state.
【図６】本発明に従って構成された研磨装置に使用され
る研磨工具の更に他の実施形態を倒立状態で示す斜面
図。FIG. 6 is a perspective view showing another embodiment of a polishing tool used in a polishing apparatus configured according to the present invention in an inverted state.
【図７】本発明に従って構成された研磨装置に使用され
る研磨工具の更に他の実施形態を倒立状態で示す斜面
図。FIG. 7 is a perspective view showing another embodiment of a polishing tool used in a polishing apparatus configured according to the present invention in an inverted state.
【図８】本発明に従って構成された研磨装置に使用され
る研磨工具の更に他の実施形態を倒立状態で示す斜面
図。FIG. 8 is a perspective view showing another embodiment of the polishing tool used in the polishing apparatus configured according to the present invention in an inverted state.
【図９】本発明に従って構成された研削・研磨機の好適
実施形態を示す斜面図。FIG. 9 is a perspective view showing a preferred embodiment of a grinding / polishing machine constituted according to the present invention.
【図１０】図９の研削・研磨機における研磨装置の一部
を示す断面図。FIG. 10 is a sectional view showing a part of a polishing apparatus in the grinding / polishing machine of FIG. 9;
２：研磨工具 ４：支持部材 ６：研磨手段 １８ａ：研削装置 １８ｂ：研削装置 ３８ａ：研削工具 ３８ｂ：研削工具 ４２：ターンテーブル ４４：チャック手段 ４６：搬入・搬出域（研磨域） ４８：粗研削域 ５０：精密研削域 ６６：研磨装置 １１６：洗浄手段 １１８：乾燥手段 2: Polishing tool 4: Support member 6: Polishing means 18a: Grinding device 18b: Grinding device 38a: Grinding tool 38b: Grinding tool 42: Turntable 44: Chuck means 46: Loading / unloading area (polishing area) 48: Rough grinding Area 50: Precision grinding area 66: Polishing device 116: Cleaning means 118: Drying means
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/304 ６３１ Ｈ０１Ｌ 21/304 ６３１ Ｆターム(参考） 3C058 AA07 BA04 BA05 CA01 CB10 DA13 3C063 AA06 AB05 BB07 BE03 BG07 BH07 CC22 EE10 FF23 FF30──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) H01L 21/304 631 H01L 21/304 631 F-term (Reference) 3C058 AA07 BA04 BA05 CA01 CB10 DA13 3C063 AA06 AB05 BB07 BE03 BG07 BH07 CC22 EE10 FF23 FF30
Claims (12)
するためのチャック手段と、回転自在に装着された研磨
工具とを具備し、 該研磨工具は密度が０．２０ｇ／ｃｍ３以上で硬度が３
０以上であるフェルト中に砥粒を分散せしめて構成され
た研磨手段を有し、 該チャック手段が回転せしめられると共に該研磨工具が
回転せしめられ、該チャック手段に保持されている被加
工物に該研磨工具の該研磨手段が押圧せしめられて被加
工物が研磨される、 ことを特徴とする研磨装置。1. A rotatably mounted chuck means for holding a workpiece, and a rotatably mounted polishing tool, wherein the polishing tool has a density of 0.20 g / cm 3 or more. With hardness 3
A polishing means configured to disperse abrasive grains in a felt of 0 or more, wherein the chuck means is rotated and the polishing tool is rotated, and the workpiece held by the chuck means A polishing apparatus, wherein the polishing means of the polishing tool is pressed to grind a workpiece.
導体ウエーハが保持され、該研磨手段は半導体ウエーハ
の研削された裏面を研磨する、請求項１記載の研磨装
置。2. The polishing apparatus according to claim 1, wherein a semiconductor wafer as a workpiece is held on said chuck means, and said polishing means polishes a ground back surface of said semiconductor wafer.
逆方向に回転せしめられる、請求項１又は２記載の研磨
装置。3. The polishing apparatus according to claim 1, wherein said chuck means and said polishing means are rotated in mutually opposite directions.
０ｒｐｍで、該研磨工具の回転速度は２０００乃至２０
０００ｒｐｍである、請求項３記載の研磨装置。4. The rotation speed of said chuck means is 5 to 20.
At 0 rpm, the rotation speed of the polishing tool is 2000 to 20
4. The polishing apparatus according to claim 3, wherein the polishing speed is 000 rpm.
０ｒｐｍで、該研磨工具の回転速度は５０００乃至８０
００ｒｐｍである、請求項４記載の研磨装置。5. The rotation speed of said chuck means is 10 to 3
At 0 rpm, the rotation speed of the polishing tool is 5000 to 80
The polishing apparatus according to claim 4, wherein the polishing speed is 00 rpm.
２の押圧力で被加工物に押圧せしめられる、請求項１か
ら５までのいずれかに記載の研磨装置。6. The polishing means is 100 to 300 g / cm.
The polishing apparatus according to any one of claims 1 to 5, wherein the workpiece is pressed against the workpiece with a pressing force of 2 .
２の押圧力で被加工物に押圧せしめられる、請求項６記
載の研磨装置。7. The polishing means is 180 to 220 g / cm.
The polishing apparatus according to claim 6, wherein the workpiece is pressed against the workpiece with a pressing force of 2 .
であり、該研磨手段は円板形状であり、半導体ウエーハ
の外径と該研磨手段の外径とは略同一であり、半導体ウ
エーハの中心軸線と該研磨手段の中心軸線とは半導体ウ
エーハの半径の１／３乃至１／２変位して位置せしめら
れている、請求項１から７までのいずれかに記載の研磨
装置。8. The workpiece is a substantially disk-shaped semiconductor wafer, and the polishing means has a disk shape, and the outer diameter of the semiconductor wafer and the outer diameter of the polishing means are substantially the same. 8. The polishing apparatus according to claim 1, wherein the center axis of the polishing means and the center axis of the polishing means are displaced by １ ／ to の of the radius of the semiconductor wafer.
て垂直で且つ該半導体ウエーハの中心軸線と該研磨手段
の中心軸線との変位方向に対して垂直な方向に、該チャ
ック手段に対して相対的に往復動せしめられる、請求項
８記載の研磨装置。9. The polishing tool is arranged such that the polishing tool is perpendicular to the rotation center axis and perpendicular to the direction of displacement between the center axis of the semiconductor wafer and the center axis of the polishing means. 9. The polishing apparatus according to claim 8, wherein the polishing apparatus is reciprocated relatively.
と同一乃至これより幾分大きい振幅で３０乃至６０秒で
一往復する速度で往復動せしめられる、請求項９記載の
研磨装置。10. The polishing apparatus according to claim 9, wherein said polishing means is reciprocated at a speed of one reciprocation in 30 to 60 seconds with an amplitude equal to or somewhat larger than the diameter of the semiconductor wafer.
で研磨するための研削・研磨機にして、 間欠的に回転せしめられるターンテーブルと、該ターン
テーブルに回転自在に装着された少なくとも１個のチャ
ック手段と、少なくとも１個の研削装置と、研磨装置と
を具備し、 研削し研磨すべき半導体ウエーハはその裏面を露呈せし
めた状態で該チャック手段上に保持され、 該ターンテーブルが間欠的に回転せしめられることによ
って、該チャック手段が少なくとも１個の研削域と研磨
域に順次に位置せしめられ、 該研削装置は研削工具を含み、該研削域に位置せしめら
れている該チャック手段に保持されている半導体ウエー
ハの裏面に、該研削工具が作用せしめられて半導体ウエ
ーハの裏面が研削され、 該研磨装置は回転自在に装着された研磨工具を含み、該
研磨工具はフェルト中に砥粒を分散せしめて構成された
研磨手段を有し、該研磨域に位置せしめらている該チャ
ック手段が回転せしめられると共に該研磨工具が回転せ
しめられ、該チャック手段に保持されている半導体ウエ
ーハの裏面に該研磨手段が押圧せしめられて、半導体ウ
エーハの裏面が研磨される、 ことを特徴とする研削・研磨機。11. A turntable intermittently rotated as a grinding / polishing machine for grinding and then polishing a back surface of a semiconductor wafer, and at least one chuck rotatably mounted on the turntable. Means, at least one grinding device, and a polishing device, wherein the semiconductor wafer to be ground and polished is held on the chuck means with its back surface exposed, and the turntable rotates intermittently. By being urged, the chuck means is sequentially located in at least one grinding zone and a polishing zone, and the grinding apparatus includes a grinding tool and is held by the chuck means located in the grinding zone. The grinding tool was acted on the back surface of the semiconductor wafer, and the back surface of the semiconductor wafer was ground, and the polishing apparatus was rotatably mounted. A polishing tool, wherein the polishing tool has polishing means constructed by dispersing abrasive grains in felt, and the chuck means, which is located in the polishing area, is rotated and the polishing tool is rotated. A grinding / polishing machine, wherein the polishing means is pressed against the back surface of the semiconductor wafer held by the chuck means, and the back surface of the semiconductor wafer is polished.
手段に保持されている半導体ウエーハの裏面に洗浄液を
噴射するための洗浄手段と、該研磨域に位置せしめられ
た該チャック手段に保持されている半導体ウエーハの裏
面に空気を噴射する乾燥手段とを具備する、請求項１１
記載の研削・研磨機。12. A cleaning means for injecting a cleaning liquid onto a back surface of a semiconductor wafer held by said chuck means positioned in said polishing area, and held by said chuck means positioned in said polishing area. And drying means for injecting air onto the back surface of the semiconductor wafer.
Grinding and polishing machine as described.
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001093398A JP4594545B2 (en) | 2001-03-28 | 2001-03-28 | Polishing apparatus and grinding / polishing machine including the same |
| SG200201425-6A SG131737A1 (en) | 2001-03-28 | 2002-03-13 | Polishing tool and polishing method and apparatus using same |
| DE10211342.4A DE10211342B4 (en) | 2001-03-28 | 2002-03-14 | Polishing tool and polishing method and apparatus using the same |
| TW091104995A TW528656B (en) | 2001-03-28 | 2002-03-15 | Polishing tool and polishing method and apparatus using same |
| US10/100,901 US7713107B2 (en) | 2001-03-28 | 2002-03-20 | Polishing tool |
| KR1020020017003A KR100838028B1 (en) | 2001-03-28 | 2002-03-28 | Polishing tool and polishing method and apparatus using same |
| CNB021198187A CN1246885C (en) | 2001-03-28 | 2002-03-28 | Polish tool and its use method and device |
| HK03101637.4A HK1054815B (en) | 2001-03-28 | 2003-03-05 | Polishing tool, polishing method and apparatus using the polishing tool |
| US11/987,382 US7736215B2 (en) | 2001-03-28 | 2007-11-29 | Polishing tool and polishing method and apparatus using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001093398A JP4594545B2 (en) | 2001-03-28 | 2001-03-28 | Polishing apparatus and grinding / polishing machine including the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002283211A true JP2002283211A (en) | 2002-10-03 |
| JP4594545B2 JP4594545B2 (en) | 2010-12-08 |
Family
ID=18947734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001093398A Expired - Lifetime JP4594545B2 (en) | 2001-03-28 | 2001-03-28 | Polishing apparatus and grinding / polishing machine including the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4594545B2 (en) |
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| JP2006303329A (en) * | 2005-04-22 | 2006-11-02 | Fuji Electric Holdings Co Ltd | Thin plate working method of silicon substrate and working apparatus used for it |
| JP2006303223A (en) * | 2005-04-21 | 2006-11-02 | Disco Abrasive Syst Ltd | Processing method of wafer |
| US7611970B2 (en) | 2006-10-23 | 2009-11-03 | Disco Corporation | Wafer processing method |
| JP2015147269A (en) * | 2014-02-06 | 2015-08-20 | 株式会社ディスコ | polishing head |
| CN106272008A (en) * | 2015-06-11 | 2017-01-04 | 蓝思科技股份有限公司 | A kind of scuffing renovation technique for face glass |
| KR20200117989A (en) | 2017-11-29 | 2020-10-14 | 엠-텍스 아이엔씨. | Polishing nanofiber aggregate and manufacturing method thereof |
| DE102022213774A1 (en) | 2021-12-24 | 2023-06-29 | Disco Corporation | CLAMPING DEVICE FOR ASSEMBLING AND DISASSEMBLING MACHINING TOOLS |
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| JP2006303223A (en) * | 2005-04-21 | 2006-11-02 | Disco Abrasive Syst Ltd | Processing method of wafer |
| JP2006303329A (en) * | 2005-04-22 | 2006-11-02 | Fuji Electric Holdings Co Ltd | Thin plate working method of silicon substrate and working apparatus used for it |
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| CN106272008A (en) * | 2015-06-11 | 2017-01-04 | 蓝思科技股份有限公司 | A kind of scuffing renovation technique for face glass |
| KR20200117989A (en) | 2017-11-29 | 2020-10-14 | 엠-텍스 아이엔씨. | Polishing nanofiber aggregate and manufacturing method thereof |
| DE102022213774A1 (en) | 2021-12-24 | 2023-06-29 | Disco Corporation | CLAMPING DEVICE FOR ASSEMBLING AND DISASSEMBLING MACHINING TOOLS |
| KR20230098005A (en) | 2021-12-24 | 2023-07-03 | 가부시기가이샤 디스코 | Jig, mounting method and dismounting method |
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| Publication number | Publication date |
|---|---|
| JP4594545B2 (en) | 2010-12-08 |
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