JP4546659B2 - Polishing tool - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a polishing tool, and more particularly to a polishing tool suitable for polishing the back surface of a semiconductor wafer having processing strain.
[0002]
[Prior art]
In the manufacturing process of a semiconductor chip, a large number of rectangular regions are partitioned by streets arranged in a lattice pattern on the surface of the semiconductor wafer, and a semiconductor circuit is disposed in each of the rectangular regions. Then, by separating the semiconductor wafer along each street, each of the rectangular regions is made into a semiconductor chip. In order to reduce the size and weight of a semiconductor chip, it is often desirable to reduce the thickness of the semiconductor wafer by grinding the back surface of the semiconductor wafer prior to individually separating the rectangular regions. The grinding of the back surface of the semiconductor wafer is usually performed by pressing a grinding means formed by fixing diamond abrasive grains with an appropriate bond such as a resin bond against the back surface of the semiconductor wafer while rotating at high speed. When the back surface of the semiconductor wafer is ground by such a grinding mode, a so-called processing strain is generated on the back surface of the semiconductor wafer, thereby considerably reducing the bending strength. Polishing the back side of a ground semiconductor wafer using loose abrasive grains to remove processing strain generated on the back side of the semiconductor wafer and thus avoid reducing the bending strength, and grinding the semiconductor It has been proposed to chemically etch the backside of the wafer using an etchant containing nitric acid and hydrofluoric acid. Further, Japanese Patent Application Laid-Open No. 2000-343440 discloses that the back surface of a semiconductor wafer is polished using a polishing means configured by dispersing abrasive grains in an appropriate cloth.
[0003]
[Problems to be solved by the invention]
Thus, polishing using loose abrasives requires complicated operations such as supply and recovery of loose abrasives, and the low efficiency of loose abrasives used in large quantities must be treated as industrial waste. There is a problem that must be done. The chemical etching using an etching solution also has a problem that an etching solution used in large quantities must be treated as industrial waste. On the other hand, in polishing by a polishing means configured by dispersing abrasive grains on a cloth, a large amount of a substance to be treated as industrial waste is not generated. However, the polishing efficiency and the polishing quality that are still satisfactory can still not be achieved.
[0004]
The present invention has been made in view of the above facts, and the main technical problem thereof is that the back surface of the semiconductor wafer can be formed with high polishing efficiency and high polishing quality without generating a large amount of substances to be treated as industrial waste. It is to provide a new and improved polishing tool that can be polished to remove the processing strains present therein.
[0005]
[Means for Solving the Problems]
As a result of intensive studies, the inventors have found that the density is 0.20 g / cm. ³ The abrasive grains are dispersed in the felt having a hardness of 30 or more. Research Polishing means The polishing surface of the polishing means includes both the lateral surface and the longitudinal surface of the felt. Therefore, it has been found that the main technical problem can be achieved.
[0006]
That is, according to the present invention, the polishing tool for achieving the main technical problem includes a support member and a polishing means fixed to the support member, and the polishing means has a density of 0.20 g / cm. ³ The felt is composed of felt having a hardness of 30 or more and abrasive grains dispersed in the felt. The polishing surface of the polishing means includes both a lateral surface and a vertical surface of the felt. A polishing tool is provided.
[0007]
Preferably, the density of the felt is 0.40 g / cm. ³ Thus, the felt has a hardness of 50 or more. The polishing means is 0.05 to 1.00 g / cm. ³ In particular, it preferably contains 0.20 to 0.70 g / cm3 of abrasive grains. . The The abrasive grains preferably have a particle diameter of 0.01 to 100 μm. The abrasive grains are silica, alumina, holsterite, steatite, mullite, cubic boron nitride, diamond, silicon nitride, silicon carbide, boron carbide, barium carbonate, calcium carbonate, iron oxide, magnesium oxide, zirconia oxide, cerium oxide, It may contain one or more of chromium oxide, tin oxide and titanium oxide. The support member preferably has a circular support surface, and the polishing means is preferably in the shape of a disk joined to the circular support surface.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
[0009]
Figure 1 is 1 illustrates a preferred embodiment of an abrasive tool constructed in accordance with the present invention. The illustrated polishing tool generally indicated by numeral 2 is composed of a support member 4 and a polishing means 6. The support member 4 is conveniently formed from a suitable metal such as aluminum and is disk-shaped and has a flat circular support surface or bottom surface. As shown in FIG. 1, a plurality of blind screw holes 7 extending downward from the upper surface of the support member 4 are formed (four in the illustrated case) at intervals in the circumferential direction. The polishing means 6 is also disk-shaped, and the outer diameter of the support member 4 and the outer diameter of the polishing means 6 are substantially the same. The polishing means 6 is joined to the lower surface of the support member 4 (that is, a flat circular support surface) with an appropriate adhesive such as an epoxy resin adhesive.
[0010]
It is important that the polishing means 6 is composed of felt and a large number of abrasive grains dispersed in the felt. Felt has a density of 0.20 g / cm ³ Above, especially 0.40 g / cm ³ Thus, it is important that the hardness is 30 or more, particularly 50 or more. As used herein, the phrase “hardness” means hardness measured according to JIS standard K6253, 5 (durometer hardness test). If the density and hardness are too low, the desired polishing efficiency and polishing quality cannot be achieved. Felt is not limited to those made of wool, but polyester, polypropylene, heat-resistant nylon, polyester, acrylic, rayon, kettle The Ra (Registered trademark) It is possible to use a felt made of an appropriate synthetic fiber such as the above, a flameproof fiber such as silica or glass, or a natural fiber such as cotton or hemp. However, in terms of polishing efficiency and polishing quality, felts containing 90% or more of wool, particularly felts that are 100% wool are preferred. The amount of abrasive grains dispersed in the felt is 0.05 to 1,000 g / cm. ³ , Especially 0.20 to 0.70 g / cm ³ It is preferable that
[0011]
The abrasive particles dispersed in the felt are preferably those having a particle size of 0.01 to 100 μm. The abrasive grains are silica, alumina, holsterite, steatite, mullite, cubic boron nitride, diamond, silicon nitride, silicon carbide, boron carbide, barium carbonate, calcium carbonate, iron oxide, magnesium oxide, zirconia oxide, cerium oxide, It may be formed from any one of chromium oxide, tin oxide, and titanium oxide. If necessary, two or more kinds of abrasive grains can be dispersed in the felt. In order to disperse the abrasive grains appropriately in the felt, for example, the abrasive grains are mixed in an appropriate liquid and the felt is impregnated in the felt, or the abrasive grains are mixed in the felt raw fiber during the felt manufacturing process. It can mix suitably. After the abrasive grains are properly dispersed in the felt, the felt is impregnated with an appropriate liquid adhesive, such as a phenol resin adhesive or an epoxy resin adhesive, and the abrasive grains are bonded into the felt by the adhesive. be able to.
[0012]
Figure 2 The felt is manufactured as a sheet S, its extending direction surface, that is, its front and back surfaces, is referred to as a horizontal surface H, and its thickness direction surface is referred to as a vertical surface V. . Research To increase polishing efficiency without degrading the polishing quality, 3 Thru figure 6 As illustrated in FIG. 5, the polishing surface, that is, the lower surface of the polishing means 6 may be formed by mixing the felt horizontal surface H and the vertical surface V together. is important . Figure 3 In the polishing tool 2 shown in FIG. 1, the lower surface of the polishing means 6 includes a horizontal surface area 8H formed from the horizontal surface H of the felt, and a plurality of vertical surface areas 8V formed from the vertical surface V of the felt. In addition, the vertical eye area 8V has a small circular shape and is distributed in the horizontal eye area 8H. Figure 4 In the polishing tool 2 shown in FIG. 1, the lower surface of the polishing means 6 is composed of a central circular horizontal face area 8H and an outer annular vertical face area 8V surrounding the horizontal face area 8H. Figure 5 In the polishing tool 2 shown in FIG. 1, the lower surface of the polishing means 6 is configured by alternately arranging the horizontal surface area 8H and the vertical surface area 8V concentrically. Figure 6 In the polishing tool 2 shown in FIG. 1, the lower surface of the polishing means 6 includes a plurality of segment-shaped horizontal eye surface regions 8H, a plurality of vertical eye surface regions 8V extending radially between the horizontal eye surface regions 8H, and further. An outer annular vertical eye surface region 8H surrounding the horizontal eye surface region 8H and the vertical eye surface region 8V is included. In addition, the figure 7 A plurality of slits 10 can be formed in the polishing means 6 as shown in FIG. The slits 10 may have a plurality of concentric circular arrangements and / or radial arrangements arranged at equiangular intervals.
[0013]
Figure 8 FIG. 2 illustrates a grinding / polishing machine that grinds and polishes the back surface of a semiconductor wafer to which a polishing tool 2 configured according to the present invention is applied. Figure Indication This grinding / polishing machine is provided with a housing generally designated by numeral 12. The housing 12 has a rectangular parallelepiped main portion 14 that is elongated. An upright wall 16 extending substantially vertically upward is disposed at the rear end of the main portion 14. The upright wall 16 is provided with two grinding devices, that is, a rough grinding device 18a and a precision grinding device 18b. More specifically, two pairs of guide rails 19 a and 19 b are fixed to the front surface of the upright wall 16. Each guide rail of the guide rail pair 19a and 19b extends substantially vertically. Sliding blocks 20a and 20b are mounted on the guide rail pairs 19a and 19b so as to be slidable in the vertical direction, respectively. Each of the sliding blocks 20a and 20b has two legs 22a and 22b, and each of the legs 22a and 22b is slidably engaged with each rail of the guide rail pair 19a and 19b. . Further, screw shafts 28a and 28b extending substantially vertically by the support members 24a and 24b and the support members 26a and 26b are rotatably mounted on the front surface of the upright wall 16. Electric motors 30a and 30b, which may be pulse motors, are also mounted on the support members 24a and 24b, and output shafts of the motors 30a and 30b are connected to screw shafts 28a and 28b, respectively. Each of the sliding blocks 20a and 20b is formed with a connecting portion (not shown) protruding rearward, and a through screw hole extending in the vertical direction is formed in the connecting portion, and the screw shafts 28a and 28b. Are screwed into the screw holes. Therefore, when the motors 30a and 30b are rotated forward, the sliding blocks 20a and 20b are lowered, and when the motors 30a and 30b are reversed, the sliding blocks 20a and 20b are raised. Support parts 32a and 32b projecting forward are formed in each of the sliding blocks 20a and 20b, and cases 34a and 34b are fixed to the support parts 32a and 32b, respectively. Rotating shafts 36a and 36b extending substantially vertically are rotatably mounted on the cases 34a and 34b. An electric motor (not shown) is disposed in the cases 34a and 34b, and the output shaft of the motor is connected to the rotating shafts 34a and 34b. Disc-shaped mounting members 36a and 36b are fixed to the lower ends of the rotating shafts 34a and 34b, and grinding tools 38a and 38b are mounted on the mounting members 36a and 36b. A plurality of grinding members having an arc shape are disposed on the lower surfaces of the grinding tools 38a and 38b. The abrasive member is conveniently formed by bonding diamond particles with a suitable binder such as a resin bond. When the motor disposed in the cases 34a and 34b is energized, the grinding tools 38a and 38b are rotated at a high speed.
[0014]
Figure 8 When the explanation is continued, a turntable 42 is disposed on the upper surface of the rear half of the main portion 14 of the housing 12. The turntable 42 is mounted so as to be rotatable about a central axis extending substantially vertically. An appropriate electric motor (not shown) is drivingly connected to the turntable 42, and the turntable 42 is intermittently rotated every 120 degrees as will be further described later. Three chuck means 44 are disposed on the turntable 42 at equal angular intervals in the circumferential direction. The illustrated chuck means 44 is composed of a porous disc mounted so as to be rotatable about a central axis extending substantially vertically. An appropriate electric motor (not shown) is drivingly connected to the chuck means 44, and the chuck means 44 is rotated at a rotational speed that may be 5 to 100 rpm. A vacuum source (not shown) is selectively communicated with the chuck means 44, and the semiconductor wafer placed on the chuck means 44 is vacuum-sucked by the chuck means 44 as will be further described later. As the turntable 42 is intermittently rotated every 120 degrees, each of the chuck means 44 is sequentially positioned in the carry-in / carry-out area 46, the rough grinding area 48, and the precision grinding area 50. As will be clearly understood from the following description, the carry-in and carry-out area 46 also functions as a polishing area.
[0015]
A cassette carry-in area 52, a cassette carry-out area 54, a conveyance mechanism 56, a semiconductor wafer receiving means 58 and a cleaning means 60 are disposed on the upper surface of the front half of the main part 14 of the housing 12. Conveying mechanisms 62 and 64 are disposed on the upper surface of the intermediate portion of the main portion 14 of the housing 12. On the cassette carry-in area 52, a cassette C that houses a plurality of semiconductor wafers W whose back surface is to be ground and polished is placed. In the cassette carry-out area 54, a cassette C for housing the semiconductor wafer W whose back surface is ground and polished is placed. The transport mechanism 56 carries out the semiconductor wafers W one by one from the cassette C placed on the cassette carry-in area 52, turns the front and back, and places them on the semiconductor wafer receiving means 58. The transport mechanism 62 carries the semiconductor wafer W placed on the semiconductor wafer receiving means 58 with the back surface facing upward onto the chuck means 44 positioned in the carry-in / out area 46.
[0016]
The semiconductor wafer W carried onto the chuck means 44 with the back surface exposed upward is positioned in the rough grinding region 48 together with the chuck means 44 by the intermittent rotation of the turntable 42. In the rough grinding region 48, the chuck means 44 holding the semiconductor wafer W is rotated, and the grinding tool 38a is rotated at a high speed. Then, the grinding tool 38a is pressed against the back surface of the semiconductor wafer W and gradually lowered, whereby the back surface of the semiconductor wafer W is ground. The central axis of the grinding tool 38a and the central axis of the chuck means 44 are displaced by a predetermined distance, so that the grinding tool 38a can be applied sufficiently uniformly over the entire back surface of the semiconductor wafer W. The semiconductor wafer W roughly ground in the rough grinding area 48 is positioned in the precision grinding area 50 together with the chuck means 44 by the intermittent rotation of the turntable 42. Then, the back surface of the semiconductor wafer W is precision ground by the grinding tool 38b. The precision grinding mode by the grinding tool 38b is the same as the rough grinding mode by the grinding tool 38a. The semiconductor wafer W precision ground in the precision grinding area 50 is positioned in the loading / unloading area 46 together with the chuck means 44 by the intermittent rotation of the turntable 42. In the loading / unloading area 46, the back surface of the semiconductor wafer W is polished as will be described in detail later.
[0017]
Next, the transport mechanism 64 transports the semiconductor wafer W on the chuck means 44 positioned in the loading / unloading area 46 to the cleaning means 60. The cleaning means 60 sprays a cleaning liquid that is pure water while rotating the semiconductor wafer W at a high speed, cleans the semiconductor wafer W, and dries it. The transport mechanism 56 reverses the cleaned and dried semiconductor wafer W again so that the surface faces upward, and transports the semiconductor wafer W into the cassette C placed on the cassette unloading area 54. When all the semiconductor wafers W in the cassette C placed in the cassette carry-in area 52 are carried out, the cassette C is replaced with the next cassette C containing the semiconductor wafer W whose back surface is to be ground and polished. When a predetermined number of semiconductor wafers W are stored in the cassette C placed in the cassette carry-out area 54, the cassette C is carried out and an empty cassette C is placed.
[0018]
Thus, the configuration and operation as described above in the illustrated grinding / polishing machine, that is, the configuration and operation other than the configuration and operation related to polishing of the back surface of the semiconductor wafer W in the loading / unloading area 46 are, for example, products from DISCO Corporation. The construction and operation of the grinding machine sold under the name “DFG841” are substantially the same and are already well known to those skilled in the art. Therefore, a detailed description of these configurations and operations will be omitted herein.
[0019]
In the illustrated grinding and polishing machine, in addition to the rough grinding device 18a and the precision grinding device 18b for grinding the back surface of the semiconductor wafer W, a polishing device 66 for polishing the back surface of the ground semiconductor wafer W is arranged. It is installed. Referring to FIG. 10 together with FIG. 9, support columns 67 and 68 extending substantially vertically upward are disposed on both side edges of the upper surface of the rear half of the main portion 14 of the housing 12. A guide rail 70 extending substantially horizontally is fixed between the columns 67 and 68, and a slide block 72 is slidably mounted on the guide rail 70. As clearly understood by referring to FIG. 10 together with FIG. 9, the guide rail 70 has a rectangular cross-sectional shape, and the rectangular cross-section in which the guide rail 70 is inserted into the sliding block 72. An opening 74 having a shape is formed. Further, a screw shaft 76 that extends substantially horizontally is rotatably mounted between the columns 67 and 68. An electric motor 78 is attached to the column 68, and an output shaft of the electric motor 78 is connected to a screw shaft 76. On the other hand, a through screw hole 80 extending substantially horizontally is formed in the slide block 72, and the screw shaft 76 is screwed into the screw hole 80. Therefore, when the electric motor 78 is rotated forward, the sliding block 72 is moved forward in the direction indicated by the arrow 82, and when the electric motor 72 is rotated reversely, the sliding block 72 is moved backward in the direction indicated by the arrow 84.
[0020]
Figure 8 And figure 9 The guide rail 86 that extends substantially vertically is formed on the front surface of the sliding block 72, and an elevating block 88 is slidably mounted along the guide rail 86. The cross-sectional shape of the guide rail 86 is an inverted trapezoid whose width gradually increases toward the front, that is, a dovetail shape, and a guide groove 90 having a corresponding cross-sectional shape is formed in the lifting block 88, A guide groove 90 is engaged with the rail 86. Figure 9 As shown clearly in FIG. 1, the guide rail 86 of the sliding block 72 is formed with a through hole 92 extending substantially vertically. A cylinder 96 of the pneumatic cylinder mechanism 94 is fixed in the through hole 92. A protruding portion 98 that protrudes rearward is formed at the lower end portion of the elevating block 88, and an opening 100 is formed in the protruding portion 98. The piston 102 of the pneumatic cylinder mechanism 94 extends downward from the sliding block 72 and extends downward through the opening 100 formed in the protrusion 98 of the lifting block 88. A flange 104 larger than the opening 100 is fixed to the lower end of the piston 102. An electric motor 106 is fixed in the elevating block 88, and a rotary shaft 108 extending substantially vertically is connected to an output shaft of the electric motor 106. A mounting member 110 is fixed to the lower end of the rotating shaft 108 that extends downward from the lifting block 88, and a lower surface of the mounting member 110 is illustrated in FIG. 1 The illustrated polishing tool 2 is fixed. More specifically, the mounting member 110 has a disk shape having an outer diameter substantially the same as the outer diameter of the support member 4 of the polishing tool 2, and a plurality of mounting members (four in the illustrated case) are spaced apart in the circumferential direction. ) Through-holes are formed. The polishing tool 2 is fixed to the lower surface of the mounting member 110 by screwing the set screw 114 into the blind screw hole 8 formed in the support member 4 of the polishing tool 2 through the through hole formed in the mounting member 110. Has been. In the illustrated embodiment, the main portion 14 of the housing 12 is further cleaned by injecting a cleaning liquid, which may be pure water, toward the semiconductor wafer W held on the chuck means 44 located in the loading / unloading area 46. A drying means 118 for injecting air, preferably heated air, toward the means 116 and the semiconductor wafer W held on the chuck means 44 located in the loading / unloading area 46 is provided.
[0021]
The operation of the polishing apparatus 66 will be described in summary. When the turntable 42 is intermittently rotated, and when the semiconductor wafer W is loaded onto the chuck means 44 positioned in the loading / unloading area 46. When the semiconductor wafer W is unloaded from the chuck means 44, the piston 102 of the pneumatic cylinder mechanism 94 is contracted to the position indicated by the two-dot chain line in FIG. 10, and the flange 104 provided at the tip of the piston 102 is moved up and down. By acting on the protruding portion 98 of 88, the elevating block 88 is raised to the ascending position indicated by a two-dot chain line in FIG. When the elevating block 88 is positioned at the raised position, the polishing tool 2 of the polishing means 66 is separated upward from the chuck means 44 positioned in the loading / unloading area 46 and the semiconductor wafer W held thereon. The turn table 42 is intermittently rotated, and the chuck means 44 holding the semiconductor wafer W whose back surface is roughly ground in the rough grinding area 48 and precision ground in the precision grinding area 50 is positioned in the carry-in / out area 46. Then, the cleaning means 116 sprays the cleaning liquid onto the back surface of the semiconductor wafer W, and the grinding waste is discharged from the back surface of the semiconductor wafer W. Next, the drying means 118 sprays air onto the back surface of the semiconductor wafer W to dry it.
[0022]
Thereafter, the piston 102 of the pneumatic cylinder mechanism 94 is extended to the position shown by the solid line in FIG. Thus, the flange 104 disposed at the tip of the piston 102 is separated downward from the protrusion 98 of the lifting block 88, and the lifting block 88, the electric motor 106 mounted on the lifting block 88, the rotary shaft 108, and the mounting member. The polishing means 6 of the polishing tool 2 is pressed against the back surface of the semiconductor wafer W by the dead weight of the polishing tool 110 and the polishing tool 2. If desired, appropriate elastic biasing means such as a compression spring is provided in addition to or in place of the weight of the lifting block 88 and various components attached thereto, and polishing means is provided by such elastic biasing means. 6 can also be pressed against the back surface of the semiconductor wafer W. At the same time as or before or after pressing the polishing means 6 of the polishing tool 2 against the back surface of the semiconductor wafer W, the chuck means 44 is rotated and the motor 106 is energized to rotate the polishing tool 2. Further, the motor 72 repeats forward rotation and reverse rotation so that the sliding block 72 is reciprocated in the directions indicated by the arrows 82 and 84, so that the polishing tool 2 is reciprocated in the directions indicated by the arrows 82 and 84. Thus, the back surface of the semiconductor wafer W is polished.
[0023]
According to the experience of the present inventors, when the back surface of the semiconductor wafer W is polished by the polishing tool 2 as described above, the chuck means 44 is moved at a relatively low speed, preferably 5 to 200 rpm, particularly 10 to 30 rpm. It is preferable that the polishing tool 2 is rotated at a relatively high speed, preferably 2000 to 20000 rpm, particularly 5000 to 8000 rpm. The rotation direction of the chuck means 44 and the rotation direction of the polishing tool 2 may be the same, but it is convenient that they are opposite to each other. Regarding the reciprocation of the polishing tool 2 in the directions indicated by the arrows 82 and 84, the polishing tool 2 can be reciprocated once in 30 to 90 seconds with an amplitude that is the same as or slightly larger than the diameter of the semiconductor wafer W. The pressing force of the polishing tool 2 against the back surface of the semiconductor wafer W is 100 to 300 g / cm. ³ , Especially 180-220g / cm ³ Is preferred. Figure 9 As shown in the figure, the diameter of the polishing means 6 of the polishing tool 2 may be substantially the same as the diameter of the semiconductor wafer W. In order to ensure that the entire polishing means 6 acts sufficiently uniformly over the entire back surface of the semiconductor wafer W, the central axis of the semiconductor wafer W held on the chuck means 44 and the central axis of the polishing means 6 Is substantially horizontal (ie, perpendicular to the center axis of rotation of the chuck means 44 and the center axis of rotation of the polishing tool 2) and perpendicular to the reciprocating direction indicated by the arrows 82 and 84 of the polishing tool 2. In this direction, it is preferable that they are displaced from each other by about 1/3 to 1/2 of the radius of the polishing means 6.
[0024]
When the back surface of the semiconductor wafer W is roughly ground by the rough grinding device 18a and then precisely ground by the precision grinding device 18b, a so-called saw mark is generated on the back surface of the semiconductor wafer W and is also zero from the back surface. A so-called processing strain (which can be clearly grasped by observing with a transmission electron microscope) is generated over a depth of about 2 μm. However, if the surface layer is removed over a depth of about 1.0 μm by polishing the back surface of the semiconductor wafer W with the polishing tool 2 constructed according to the present invention after grinding, the back surface of the semiconductor wafer W is made to be a mirror surface. And the processing strain can be substantially eliminated.
[0025]
【The invention's effect】
According to the polishing tool of the present invention, the back surface of the semiconductor wafer is polished with high polishing efficiency and high polishing quality without generating a large amount of a material to be processed as industrial waste, and the processing strain that has existed therein is present. Can be removed.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a preferred embodiment of a polishing tool constructed according to the present invention.
[Figure 2 ] Slope view showing part of felt.
[Figure 3 An abrasive tool constructed in accordance with the present invention The fruit The slope figure which shows embodiment in an inverted state.
[Figure 4 An abrasive tool constructed in accordance with the present invention Other The slope view which shows embodiment of this in an inverted state.
[Figure 5 A perspective view showing still another embodiment of a polishing tool constructed according to the present invention in an inverted state.
[Figure 6 A perspective view showing still another embodiment of a polishing tool constructed according to the present invention in an inverted state.
[Figure 7 A perspective view showing still another embodiment of a polishing tool constructed according to the present invention in an inverted state.
[Figure 8 A perspective view showing a grinding / polishing machine to which a polishing tool constructed according to the present invention is applied.
[Figure 9 ] Figure 8 Sectional drawing which shows a part of grinding | polishing apparatus in the grinding / polishing machine.
[Explanation of symbols]
2: Polishing tool
4: Support member
6: Polishing means

Claims (9)

A support member, and a polishing means fixed to the support member, wherein the polishing means has a density of 0.20 g / cm ³ or more and a hardness of 30 or more, and abrasive particles dispersed in the felt A polishing tool characterized in that the polishing surface of the polishing means includes both a lateral surface and a vertical surface of the felt . The polishing tool according to claim 1, wherein the felt has a density of 0.40 g / cm ³ or more.   The polishing tool according to claim 1 or 2, wherein the felt has a hardness of 50 or more. The polishing tool according to any one of claims 1 to 3, wherein the polishing means contains 0.05 to 1.00 g / cm ³ of abrasive grains. The polishing tool according to claim 4, wherein the polishing means contains 0.20 to 0.70 g / cm ³ of abrasive grains.   The polishing tool according to any one of claims 1 to 5, wherein the felt contains 90% or more of wool by weight. The polishing tool according to any one of claims 1 to 6 , wherein the abrasive grains have a particle size of 0.01 to 100 µm. The abrasive grains are silica, alumina, holsterite, steatite, mullite, cubic boron nitride, diamond, silicon nitride, silicon carbide, boron carbide, barium carbonate, calcium carbonate, iron oxide, magnesium oxide, zirconia oxide, cerium oxide, The polishing tool according to any one of claims 1 to 7 , comprising one or more of chromium oxide, tin oxide, and titanium oxide. The polishing tool according to any one of claims 1 to 8 , wherein the support member has a circular support surface, and the polishing means has a disk shape bonded to the circular support surface.

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