JPH09193008A - Flattening and polishing device and method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a flattening and polishing device with which an object to be polished such as a wafer can be polished and flattened to the high accuracy and at a high speed. SOLUTION: A polishing plate 2 with a vacuum groove is rotated by a spindle motor 3 at a high speed, e.g. 1500rpm. A wafer 9 held by a wafer sucking film 12 is rotated at a speed of 50rpm for example. While a slider 6 makes traverse movement along a rail 26 at a prescribed amplitude and a speed, the surface of the wafer 9 is polished by a polishing pad 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flattening / polishing apparatus and a method for globally flattening steps of an insulating film on a wafer surface in a manufacturing process of, for example, an LSI (Large Scale Integrated Circuit).

[0002]

2. Description of the Related Art In a multi-layer wiring process performed in an LSI manufacturing process, a technique for flattening an interlayer insulating film is extremely important. That is, in the exposure for forming the wiring pattern on the insulating film, the depth of focus (DOF) tends to be shallow with the miniaturization of the wiring structure (design rule), and accordingly, the insulating film on the wafer surface is correspondingly reduced. It is necessary to have a technology to flatten the level difference (concavo-convex) globally. As such a planarization technique, for example, a coating method, a reflow method, an etching method, a PVD (Physical Vapor Deposit) has been conventionally used.
Ion) method or CVD (Chemical Vapor Deposition) method is used.

However, any of the conventional flattening techniques is required to support further miniaturization and higher integration in the future.
There is a problem of insufficient price and accuracy. In order to solve such a problem, in recent years, CMP applying a mirror polishing technique for a silicon wafer
The (Chemical Mechanical Polishing) method is drawing attention.

[0004]

However, the conventional wafer flattening technique using the CMP method is an extension of the lap polishing technique, and the uniformity of the in-plane of the wafer, the flatness, and the polishing rate are stable. There is a problem in that it is insufficient in terms of accuracy such as sex. For example, on the wafer surface, there are a mixture of dense wiring areas and a rough wiring area. With a conventional flattening / polishing device, when flattening is performed, the area between the dense wiring area and the rough area is There is a problem that a step is generated. This is because, as shown in FIG. 14, the polishing amount of the silicon oxide film is different between the dense portion and the rough portion of the wiring. As a solution to this problem, there is a method of providing a dummy pattern on a rough portion of the wiring on the wafer surface, but the number of patterns formed on the wafer increases, which is not preferable from the viewpoint of manufacturing and high integration. In the lap polishing technique, the polishing surface has an area several times as large as the surface to be polished. Further, the conventional flattening technique for a wafer using the CMP method has a problem that the mass productivity is low.

The present invention has been made in view of the above-mentioned prior art, and an object of the present invention is to provide a flattening / polishing apparatus capable of polishing and flattening an object to be polished such as a wafer with high precision and high speed.

[0006]

In order to solve the above-mentioned problems of the prior art and to achieve the above-mentioned object, the flattening polishing apparatus of the present invention has a polishing surface having a negative pressure groove. And means for holding the object to be polished, and drive means for relatively high speed rotation while bringing the surface to be polished and the surface to be polished of the object to be polished into close proximity or in contact with each other.

In the flattening and polishing apparatus of the present invention, when the polishing surface and the surface to be polished to be polished are brought into close proximity or in contact with each other by the driving means, relatively high speed rotation is caused by the negative pressure groove provided in the polishing surface. The negative pressure brings the polishing surface and the surface to be polished into close contact with each other. Therefore, the occurrence of the hydroplaning phenomenon is suppressed between the polishing surface and the surface to be polished, and the surface to be polished is appropriately polished by the polishing surface.

The flattening / polishing device of the present invention preferably further comprises a polishing agent supply means for supplying a polishing agent to the surface to be polished.

Further, in the flattening polishing apparatus of the present invention, preferably, the driving means rotates the polishing surface at a rotation speed of 100 to 100.
Rotate at 2000 rpm.

Further, the flattening / polishing device of the present invention preferably further comprises moving means for moving the holding means in a direction orthogonal to the polishing direction during polishing.

Further, in the flattening / polishing device of the present invention, preferably, the moving means moves so as to correct a change in polishing characteristics due to at least one of a change in ambient conditions and a change in polishing conditions.

The flattening / polishing device of the present invention preferably performs polishing twice or more under different polishing conditions.

Further, in the flattening polishing method of the present invention, the polishing surface and the surface to be polished have substantially the same area,
The polishing surface and the surface to be polished are brought into close proximity or in contact with each other and rotated at a relatively high speed.

In the flattening polishing method of the present invention, preferably, the polishing surface is provided with a negative pressure groove.

In the flattening / polishing method of the present invention, preferably, polishing is performed while supplying an abrasive to the surface to be polished.

In the flattening polishing method of the present invention, the polishing surface is preferably rotated at a rotation speed of 100 to 2000 rpm.

In the flattening / polishing method of the present invention, preferably, the object to be polished is moved in a direction orthogonal to the polishing direction during polishing.

Further, in the flattening / polishing method of the present invention, preferably, the object to be polished is moved so as to correct a change in polishing characteristics due to at least one of a change in ambient conditions and a change in polishing conditions.

Further, in the flattening polishing method of the present invention, the polishing is preferably performed twice or more under different polishing conditions.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a flattening polishing apparatus and a method therefor according to embodiments of the present invention will be described. First Embodiment FIG. 1 is an external perspective view of a flattening / polishing device according to this embodiment, FIG. 2 is a cross-sectional view of the rotary table shown in FIG. 1, and FIG.
Shows a sectional view of the spindle spindle shown in FIG. 1.

As shown in FIG. 1, the flattening / polishing apparatus according to this embodiment is mainly composed of a main spindle 20 and a rotary table 21. First, the rotary table 2
0 will be described. As shown in FIG. 2, in the rotary table 20, the rotational force from the motor 17 is transmitted to the pulley 18 via the pulley 15 and the flat belt 16, and the joint 23 rotates in association with the rotation of the pulley 18. Joint 23
Is supported by bearings 14 and 22,
A table 24 is provided on the surface. The table 24 has a disk shape with a diameter of about 200 mm. In this embodiment,
In order to stabilize the rotation of the wafer suction film 12 with respect to the rotation axis, the joint 23 and the bearings 14, 22 are provided.
High rigidity member is used for On the surface of the table 24, a wafer adsorption film 1 using urethane rubber or the like
2 is attached.

A vacuum suction pipe 25 reaching the surface of the wafer suction film 12 is housed in the hollow portion provided at the center of rotation of the joint 23 and the table 24. One end of the vacuum suction pipe 25 is connected to a suction device (not shown). As shown in FIG. 1, the rotary table 20 is fixed to the surface of a slider 6 which is provided along a rail 26 so as to be movable in the X-axis direction.

Next, the main spindle 21 will be described. As shown in FIG. 3, in the main spindle 21, the polishing pad 1 made of a porous viscoelastic material such as foamed polyurethane is attached to the lower surface of the polishing plate 2 in the figure. The polishing pad 1 has substantially the same area as the surface to be polished of the wafer 9. A flange 31, an air bearing 4, and a rotor coil 38 are sequentially provided above the polishing plate 2 in the drawing. The polishing pad 1 has, for example, a disk shape having a diameter of about 220 mm. The spindle motor 3 is composed of the stator coil 37 and the rotor coil 38.

The polishing plate 2, the flange 31, the air bearing shaft 32 of the air bearing 4, the nozzle bracket 36 and the rotor coil 38 rotate integrally. That is, when the rotor coil 38 is rotated by the electromagnetic force from the stator coil 37, the polishing pad 1, the polishing plate 2, the flange 31, the air bearing shaft 32, and the nozzle bracket 36 are interlocked with it.
Rotates. That is, the main spindle 21 is rotated by the spindle motor 3 without using a flat belt or the like,
The mechanism is such that it is directly transmitted to the polishing plate 2.

FIG. 4A is a view for explaining the plane pattern of the dynamic pressure type grooves formed on the polishing surface of the polishing pad 1, and FIG. 4B is a sectional view of the polishing pad 1. Polishing pad 1
As shown in FIGS. 4A and 4B, a plurality of dynamic pressure type grooves 1a extending substantially spirally from the vicinity of the central axis toward the outer periphery are formed on the polished surface. The hydrodynamic groove 1a is a recess having a depth of about 1 mm, and a convex portion 1b is formed between adjacent hydrodynamic grooves 1a. The dynamic pressure type groove 1a serves as a negative pressure groove for discharging the slurry located between the polishing pad 1 and the wafer 9 to the outside when the polishing pad 1 rotates and increasing the adhesion between the polishing pad 1 and the wafer 9. Play a role. As a result, when the polishing pad 1 is rotated at a high speed, the hydroplaning phenomenon is suppressed from occurring between the polishing pad 1 and the wafer 9, and the reduction of the polishing rate can be prevented. As the slurry, for example, an aqueous solution of powdery silicon oxide (SiO ₂ ) and potassium hydroxide (KOH) is used. The shape of the dynamic pressure type groove 1a is not limited to that shown in FIG. 4 as long as it functions properly as a negative pressure groove, and for example, a planar pattern extending linearly from the vicinity of the center of the polishing pad 1 toward the outer periphery thereof. Good.

A stator coil 37 is provided inside the rotor coil 38. The stator coil 37 is the cover 4
The nozzle bracket 36 is provided inside the stator coil 37. Nozzle bracket 36
The nozzle hollow portion 36a is formed along the central axis, and the nozzle 40 is fitted into one end of the nozzle hollow portion 36a. The nozzle 40 includes a hollow portion 3 for the nozzle.
Slurry (abrasive) is supplied from a slurry supply device (not shown) via 6a. The slurry from the nozzle 40 is jetted (supplied) substantially radially between the polishing plate 2 and the wafer to be polished.

The cover 41 is provided with an air intake port 41a, and the main shaft spindle 21 extends from the air intake port 41a.
The air for increasing the internal pressure of is sucked. This air can prevent the slurry ejected from the nozzle 40 from flowing backward into the main spindle 21. Further, in this embodiment, in order to stabilize the rotation of the polishing pad 1 with respect to the rotary shaft 5, high rigidity members are used for the nozzle bracket 36, the air bearing shaft 32, the flange 31, the polishing plate 2, and the like.

In FIG. 3, numeral 33 indicates an air bearing housing, numeral 34 indicates a porous throttle portion, and numeral 35 indicates a spindle flange.

Next, the operation of the flattening / polishing apparatus according to this embodiment will be described. First, the rotary table 20
Suction device starts suction, and wafer suction film 12
A suction force is generated on the surface of. In this state, as shown in FIG. 1, the wafer 9 is placed on the surface of the wafer suction film 12 with the surface to be polished facing upward, and the wafer 9 is sucked onto the wafer suction film 12. Further, the polishing pad 1 is rotated at a rotation speed of about 1500 to 3000 rpm by driving the spindle motor 3 shown in FIG. 3, and the wafer suction film 12 is rotated at a rotation speed of about 30 to 500 rpm by driving the motor 17 shown in FIG. Further, the slider 6 is moved along the rail 26 in the X-axis direction so that the polishing pad 1 is located above the wafer 9.

At this time, the nozzle hollow portion 36 shown in FIG.
The slurry from the slurry supply device is supplied to the nozzle 40 via a, and is sprayed radially from the nozzle 40 between the polishing pad 1 and the wafer 9.

Then, the main spindle 21 descends in the Z-axis direction by a driving device (not shown), and at a predetermined polishing pressure,
The polishing pad 1 is pressed against the surface to be polished of the wafer 9. As a result, the surface to be polished of the wafer 9 has a chemical polishing action due to the alkaline component in the slurry, a mechanical polishing action due to abrasive particles such as silica having a diameter of about 0.1 μm, and a synergistic polishing action between them. Mechanochemical polishing (CMP) is performed. In FIG. 5, the horizontal axis represents the number of revolutions (rpm) of the main spindle 21, the vertical axis represents the polishing rate of the wafer 9, and the polishing pad 1 has a dynamic pressure groove 1a.
It is the figure which compared the case where it provided and the case where the dynamic pressure type groove | channel 1a is not provided. As shown in FIG. 5, when the polishing pad 1 is provided with the dynamic pressure type groove 1a, for example, the main spindle 2
When 1 is rotated at a high speed of 1500 rpm, a higher polishing rate can be obtained as compared with the case where the polishing pad 1 is not provided with the dynamic pressure type groove 1a. That is, in the flattening polishing apparatus according to the present embodiment, since the polishing pad 1 is provided with the dynamic pressure type groove 1a, as described above,
It is possible to prevent the hydroplaning phenomenon from occurring between the polishing pad 1 and the wafer 9 and prevent the polishing rate from decreasing.

Next, the polishing characteristics of the wafer by the flattening polishing apparatus according to this embodiment will be described. The displacement of the polishing pad 1 during polishing is shown by a characteristic pattern of viscoelastic deformation. For example, ABTEC'90 / Paper No. 112.
As shown in FIG. 6 (A) and disclosed in (G), a four-element model combining a Maxwell model in which a spring and a dashpot are directly connected, which is a basic model of viscoelasticity, and a Voigt model arranged in parallel is used. This can be analyzed by applying the same to obtain the viscosity coefficient and elastic coefficient of the four types of polishing pads 1 and obtaining the correlation with the flatness.

That is, the displacement δ of the polishing pad 1 is as shown in FIG.
As shown in (B), it is defined by the following equation (1).

## EQU1 ## δ = U + V + Z (1)

In the above equation (1), U, V and Z represent the instantaneous elastic deformation value, the delayed elastic deformation value and the permanent displacement Z, respectively. Further, the following equations (2) to (4) are established from the viscoelasticity theory and Tymoshenko's elastic mechanics.

2aU = (1-ν ² ) P / E ₁₊ (2)

[0035]

2aV = (1-ν ² ) P / E ₂₊ (1-exp (-E ₂₊ × t ₂ / η ₂₊ )) (3)

[0036]

2aZ = (1-ν ² ) P × t ₁ / η ₁₊ (4)

In the above equations (2) to (4), E ₁₊ : Maxwell model elastic coefficient E ₂₊ : Voigt model elastic coefficient η ₁₊ : Maxwell model viscosity coefficient η ₂₊ : Voigt model elastic coefficient Viscosity coefficient a: Radius of measured indenter (10 mm) ν: Poisson's ratio (0.4) P: Load applied to the indenter (0.42 kgf) t ₁ : Load time of load t ₂ : Indicates elapsed time after unloading ing.

Then, in the above equations (1) to (4),
When the load time t ₁ is fixed and the formula (1) is arranged with respect to the elapsed time t ₂ , the following formula (5) is established.

Δ / 2a = (1-ν ² ) P [(1 / E ₁₊ + t ₁ / η ₁₊ ) + 1 / {E 2 ₊ · (1- exp (−E _{2 +} · t ₂ / η ₂₊ ))}] (5)

From the above equation (5), the displacement δ of the polishing pad 1
Increases as the elapsed time t ₂ after unloading increases.
Here, when flattening the stepped portion on the surface of the wafer 9, the elapsed time t ₂ is the passage time of the space portion,
It can be seen that increasing the rotation speed of the polishing pad 1, that is, increasing the relative speed between the polishing pad 1 and the wafer 9 improves the flattening rate of the wafer 9 after polishing. Here, the space portion means a portion having no wiring pattern, that is, a concave portion having a step.

As described above, in the flattening polishing apparatus according to this embodiment, by providing the dynamic pressure type groove 1a in the polishing pad 1, even if the polishing pad 1 and the wafer 9 are rotated at a relatively high speed, It is possible to prevent the hydroplaning phenomenon from occurring between the polishing pad 1 and the wafer 9. As a result, the wafer 9 can be planarized efficiently and highly accurately, the process margin can be expanded, and the restriction of the design rule can be relaxed. Further, according to the flattening / polishing device according to the present embodiment, it is possible to shorten the wiring process, mass-produce and reduce cost, and downsize the device.

Further, in the flattening polishing method according to the present embodiment, as described above, the high-rigidity member is used to stabilize the rotational postures of the spindle spindle 21 and the wafer suction film 12, thereby making the polishing pad 1 Dynamic pressure type groove 1
Even if a is not provided, the hydroplane phenomenon can be suppressed even when the polishing pad 1 and the wafer 9 are rotated at a relatively high speed. For example, polishing pad 1
Is rotated at a rotation speed of 1000 to 2000 rpm and the wafer 9 is rotated at a rotation speed of 300 to 500 rpm, the hydroplane phenomenon does not occur. In this way, by stabilizing the rotation of the polishing pad 1 and the wafer 9, it is possible to easily control the processing accuracy of the wafer 9.

In the flattening polishing apparatus and method according to this embodiment, the rotation speeds of the polishing pad 1 and the wafer 9 are determined in consideration of the sizes of the polishing pad 1 and the wafer 9.

Second Embodiment The flattening / polishing apparatus according to this embodiment is basically the same as the above-described first embodiment except that the slider 6 is traversed during the polishing shown in FIG. It is the same as the flattening polishing apparatus according to the embodiment.

In the flattening polishing apparatus according to this embodiment,
First, the suction device of the rotary table 20 starts suction, and a suction force is generated on the surface of the wafer suction film 12. In this state, as shown in FIG. 1, the wafer 9 is placed on the surface of the wafer suction film 12 with the surface to be polished facing upward, and the wafer 9 is sucked onto the wafer suction film 12. Further, by driving the spindle motor 3 shown in FIG.
The wafer adsorption film 12 is rotated at 0 rpm and the rotation speed of the wafer adsorption film 12 is about 30 to 50 by driving the motor 17 shown in FIG.
Rotate at 0 rpm. Further, the slider 6 is moved along the rail 26 in the X-axis direction so that the polishing pad 1 is located above the wafer 9.

At this time, the hollow portion 36 for the nozzle shown in FIG.
The slurry from the slurry supply device is supplied to the nozzle 40 via a, and is sprayed radially from the nozzle 40 between the polishing pad 1 and the wafer 9.

Then, the main spindle 21 is lowered in the Z-axis direction by a driving device (not shown), and at a predetermined polishing pressure,
The polishing pad 1 is pressed against the surface to be polished of the wafer 9. As a result, the surface to be polished of the wafer 9 has a chemical polishing action due to the alkaline component in the slurry, a mechanical polishing action due to abrasive particles such as silica having a diameter of about 0.1 μm, and a synergistic polishing action between them. Mechanochemical polishing (CMP9 is performed.

In the flattening / polishing apparatus according to this embodiment,
While the polishing pad 1 is pressed against the surface to be polished of the wafer 9, by a driving force from a driving device (not shown),
The slider 6 reciprocates along the rail 26 at a predetermined cycle and amplitude, and the wafer 9 traverses the polishing pad 1. The speed of the traverse movement is, for example, 5 to 400 (mm / min). In the flattening polishing apparatus according to the present embodiment, as shown in FIG.
The traverse motion is performed in the X-axis direction at 0 mm. At this time,
The film thickness of the wafer 9 is as shown in FIG. 7B, where the horizontal axis represents the diameter (mm) of the wafer 9 and the vertical axis represents the film thickness (polishing amount).

On the other hand, the positional relationship between the polishing pad 1 and the wafer 9 is as shown in FIG. 8A, and when the traverse movement is not performed, the film thickness of the wafer 9 is as shown in FIG. 8B. Therefore, the vicinity of the center of the wafer 9 is excessively polished. By comparing FIG. 7B and FIG. 8B, the flattening / polishing apparatus according to the present embodiment makes the surface of the wafer 9 highly precise by traversing the wafer 9. Can be made.

Further, in the flattening / polishing apparatus according to this embodiment, as shown in FIG. 9 (A), when the traverse amount of the wafer 9 is 75 mm, the film thickness of the wafer 9 is shown in FIG. 9 (B). As shown in. In the data shown in FIGS. 7 to 8, the polishing pad 1 is rotated at a rotation speed of 500 rpm, and the wafer 9 is rotated at a rotation speed of 200 rpm.

Further, in the flattening / polishing apparatus according to this embodiment, when the rotation speed of the polishing pad 1 is 1500 rpm, the rotation speed of the wafer 9 is 500 rpm, and the traverse amount of the wafer 9 is 30 to 90 mm, the wafer 9 is rotated. The relationship between the diameter and the film thickness is as shown in FIG. In the flattening polishing apparatus according to this embodiment, the rotation speed of the polishing pad 1 is 1500 rpm and the rotation speed of the wafer 9 is 10 rpm.
00 rpm and the traverse amount of the wafer 9 is 15 to 7
When the thickness is 5 mm, the relationship between the diameter of the wafer 9 and the film thickness is shown in FIG.
As shown in FIG. 1, the wafer 9 can be planarized with high precision.

As described above, the flattening polishing apparatus and method according to this embodiment can further enhance the polishing characteristics of the wafer 9. In the flattening polishing apparatus and method according to the present embodiment, the polishing process may be performed using two or more different traverse amounts so as to obtain high polishing characteristics. For example, the first
In the step, as shown in FIG. 12, the rotation speed of the polishing pad 1 is 1500 rpm, the rotation speed of the wafer 9 is 500 rpm, and the traverse amount is 5 to 95 mm. Polish under the lowered condition. Next, in the next second step, as shown in FIG.
The number of revolutions of the wafer 9 is 500 rpm, the traverse amount is 15 to 75 mm, and the polishing is performed under the condition that the polishing rate of the central portion of the wafer 9 is high.

Incidentally, it is desirable that the traverse conditions are determined so as to reduce the polishing rate of the edge portion, for example, in consideration of the sag generated at the edge portion of the wafer 9.
By the way, the polishing characteristics change depending on the temperature, but the surface of the wafer 9 cannot be planarized with high accuracy unless such changes are properly corrected. Therefore, in the flattening polishing apparatus according to this embodiment, it is desirable to set the traverse conditions of the wafer 9 so as to correct the change in the polishing characteristics due to the temperature. In addition to the temperature, it is desirable to set the traverse conditions so as to correct the change in the polishing characteristics due to at least one of the other ambient conditions and the variation of the polishing conditions.

The present invention is not limited to the above embodiments. For example, in the above-described embodiment, the case where the surface of the wafer 9 is flattened has been illustrated, but the present invention is also applicable to the case where the metal surface is flattened.

[0054]

As described above, according to the flattening polishing apparatus and method of the present invention, the polishing surface and the surface to be polished are rotated at a relatively high speed by providing the negative pressure groove on the polishing surface. However, the hydroplaning phenomenon can be prevented from occurring between the polished surface and the surface to be polished. As a result, the surface to be polished can be planarized efficiently and highly accurately, the process margin can be expanded, and the restrictions of the design rule can be relaxed. Further, according to the flattening polishing apparatus and the method therefor of the present invention, it is possible to shorten the wiring process, mass produce and reduce the cost, and downsize the apparatus.

[Brief description of the drawings]

FIG. 1 is an external perspective view of a flattening and polishing apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the rotary table shown in FIG.

FIG. 3 shows a sectional view of the spindle spindle shown in FIG.

FIG. 4 is a view for explaining a dynamic pressure type groove provided in a polishing pad.

FIG. 5 is a diagram comparing a horizontal axis with the number of revolutions (rpm) of a main spindle, a vertical axis with a wafer polishing rate, and a case where a polishing pad is provided with a dynamic pressure groove and a case where no dynamic pressure groove is provided. Is.

FIG. 6 is a diagram for explaining polishing characteristics of the flattening polishing apparatus shown in FIG.

FIG. 7 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 8 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 9 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 10 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 11 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 12 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 13 is a diagram showing a relationship between a rotation speed of a polishing pad, a rotation speed of a wafer, a traverse amount, and a film thickness of a wafer after polishing.

FIG. 14 is a diagram for explaining a problem of the conventional technique.

[Explanation of Codes] 1 ... Polishing pad 2 ... Polishing plate 3 ... Spindle motor 4 ... Air bearing 6 ... Slider 20 ... Rotary table 21 ... Spindle spindle 26 ... Rail

Claims (13)

[Claims] 1. A polishing means having a polishing surface provided with a negative pressure groove, a holding means for holding an object to be polished, a polishing surface and a surface to be polished of the object to be polished are close to or in contact with each other. Flattening and polishing apparatus having a driving unit that rotates at high speed. 2. The flattening polishing apparatus according to claim 1, further comprising a polishing agent supply means for supplying a polishing agent to the surface to be polished. 3. The drive means rotates the polishing surface at a rotation speed of 1
The flattening and polishing apparatus according to claim 1, which rotates at 00 to 2000 rpm. 4. The flattening polishing apparatus according to claim 1, further comprising moving means for moving the holding means in a direction orthogonal to the polishing direction during polishing. 5. The flattening polishing apparatus according to claim 4, wherein the moving means moves so as to correct a change in polishing characteristics due to at least one of fluctuation of ambient conditions and polishing conditions. 6. The flattening polishing apparatus according to claim 1, wherein polishing is performed twice or more under different polishing conditions. 7. A flattening polishing method in which a surface to be polished and a surface to be polished have substantially the same area, and relatively high speed rotation is performed while the surface to be polished and the surface to be polished are brought close to or in contact with each other. . 8. The flattening polishing method according to claim 7, wherein a negative pressure groove is provided on the polishing surface. 9. The flattening polishing method according to claim 8, wherein polishing is performed while supplying an abrasive to the surface to be polished. 10. The polishing surface is rotated at a rotation speed of 100 to 2000.
The flattening and polishing method according to claim 7, which is rotated at rpm. 11. The flattening polishing method according to claim 7, wherein the object to be polished is moved in a direction orthogonal to the polishing direction during polishing. 12. The flattening polishing method according to claim 11, wherein the moving means moves the object to be polished so as to correct a change in polishing characteristics due to at least one of fluctuations in ambient conditions and polishing conditions. 13. The flattening polishing method according to claim 7, wherein polishing is performed twice or more under different polishing conditions.