JP2002270616A5 - - Google Patents
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- Publication number
- JP2002270616A5 JP2002270616A5 JP2002050005A JP2002050005A JP2002270616A5 JP 2002270616 A5 JP2002270616 A5 JP 2002270616A5 JP 2002050005 A JP2002050005 A JP 2002050005A JP 2002050005 A JP2002050005 A JP 2002050005A JP 2002270616 A5 JP2002270616 A5 JP 2002270616A5
- Authority
- JP
- Japan
- Prior art keywords
- bipolar transistor
- heterojunction bipolar
- gaassb
- layer
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 239000000370 acceptor Substances 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US796299 | 1997-02-07 | ||
| US09/796,299 US6762480B2 (en) | 2001-02-27 | 2001-02-27 | Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002270616A JP2002270616A (ja) | 2002-09-20 |
| JP2002270616A5 true JP2002270616A5 (cg-RX-API-DMAC7.html) | 2005-08-25 |
Family
ID=25167855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002050005A Pending JP2002270616A (ja) | 2001-02-27 | 2002-02-26 | 薄いガリウム砒素アンチモン層をベースに用いた利得向上型ヘテロ接合バイポーラトランジスタ及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6762480B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1237199A3 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2002270616A (cg-RX-API-DMAC7.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003009339A2 (en) * | 2001-07-20 | 2003-01-30 | Microlink Devices, Inc. | Graded base gaassb for high speed gaas hbt |
| US7295586B2 (en) * | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
| JP2004207583A (ja) | 2002-12-26 | 2004-07-22 | Sony Corp | 半導体装置 |
| US7242038B2 (en) | 2004-07-01 | 2007-07-10 | Nippon Telegraph And Telephone Corporation | Heterojunction bipolar transistor |
| FR2878078B1 (fr) * | 2004-11-18 | 2007-01-19 | Cit Alcatel | Transistor bipolaire et procede de fabrication de ce transistor |
| US7038256B1 (en) * | 2004-12-03 | 2006-05-02 | Northrop Grumman Corp. | Low turn-on voltage, non-electron blocking double HBT structure |
| US8575659B1 (en) * | 2011-08-13 | 2013-11-05 | Hrl Laboratories, Llc | Carbon-beryllium combinationally doped semiconductor |
| JP6240061B2 (ja) * | 2014-12-25 | 2017-11-29 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
| JP7597124B2 (ja) * | 2020-12-17 | 2024-12-10 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタ |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US27232A (en) * | 1860-02-21 | Spring-skate | ||
| US4821082A (en) * | 1987-10-30 | 1989-04-11 | International Business Machines Corporation | Heterojunction bipolar transistor with substantially aligned energy levels |
| JP2830167B2 (ja) * | 1989-09-22 | 1998-12-02 | 日本電気株式会社 | 半導体結晶 |
| JP3210383B2 (ja) * | 1992-01-22 | 2001-09-17 | 株式会社東芝 | ヘテロ接合バイポーラトランジスタ |
| US5349201A (en) * | 1992-05-28 | 1994-09-20 | Hughes Aircraft Company | NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate |
| JPH0783032B2 (ja) * | 1993-01-28 | 1995-09-06 | 日本電気株式会社 | ２−６族化合物半導体ｐ形電極構造 |
| EP0715357A1 (en) * | 1994-11-30 | 1996-06-05 | Rockwell International Corporation | Carbon-doped GaAsSb semiconductor |
| US5770868A (en) * | 1995-11-08 | 1998-06-23 | Martin Marietta Corporation | GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets |
| DE19640003B4 (de) * | 1996-09-27 | 2005-07-07 | Siemens Ag | Halbleitervorrichtung und Verfahren zu dessen Herstellung |
| JP3628873B2 (ja) * | 1998-04-28 | 2005-03-16 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JPH11354451A (ja) * | 1998-06-05 | 1999-12-24 | Hitachi Ltd | 半導体装置 |
| JP3658745B2 (ja) * | 1998-08-19 | 2005-06-08 | 株式会社ルネサステクノロジ | バイポーラトランジスタ |
| JP2000306920A (ja) * | 1999-04-20 | 2000-11-02 | Furukawa Electric Co Ltd:The | ヘテロ接合バイポーラトランジスタ及びその作製方法 |
| US6670653B1 (en) | 1999-07-30 | 2003-12-30 | Hrl Laboratories, Llc | InP collector InGaAsSb base DHBT device and method of forming same |
| US6251738B1 (en) * | 2000-01-10 | 2001-06-26 | International Business Machines Corporation | Process for forming a silicon-germanium base of heterojunction bipolar transistor |
| US6316795B1 (en) * | 2000-04-03 | 2001-11-13 | Hrl Laboratories, Llc | Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors |
-
2001
- 2001-02-27 US US09/796,299 patent/US6762480B2/en not_active Expired - Lifetime
- 2001-10-16 EP EP01124695A patent/EP1237199A3/en not_active Ceased
-
2002
- 2002-02-26 JP JP2002050005A patent/JP2002270616A/ja active Pending
-
2003
- 2003-11-12 US US10/706,072 patent/US20040104403A1/en not_active Abandoned
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