JP2002246717A - Ceramic circuit board - Google Patents

Ceramic circuit board

Info

Publication number
JP2002246717A
JP2002246717A JP2001045060A JP2001045060A JP2002246717A JP 2002246717 A JP2002246717 A JP 2002246717A JP 2001045060 A JP2001045060 A JP 2001045060A JP 2001045060 A JP2001045060 A JP 2001045060A JP 2002246717 A JP2002246717 A JP 2002246717A
Authority
JP
Japan
Prior art keywords
metal
circuit board
ceramic substrate
ceramic
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001045060A
Other languages
Japanese (ja)
Other versions
JP4646417B2 (en
Inventor
Takeshi Furukuwa
健 古桑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001045060A priority Critical patent/JP4646417B2/en
Publication of JP2002246717A publication Critical patent/JP2002246717A/en
Application granted granted Critical
Publication of JP4646417B2 publication Critical patent/JP4646417B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To solve the problem of electrical connection not being made sure and rigid between metal circuit boards bonded to the upper and lower surfaces of a ceramic substrate. SOLUTION: Metal circuit boards 3 of copper or aluminum are fixed to the opposite sides of a ceramic substrate 1, having a through-hole 4 such that the through-hole 4 is plugged and a metal post 5 of copper or aluminum is disposed in the through hole 4, in order to connect the metal circuit boards 3 on the opposite sides of the ceramic substrate. In such a ceramic circuit board, a space of 30-200 μm long is provided between the inner wall face of the through-hole 4 and the outer wall face of the metal post 5.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、セラミック基板の
両面に金属回路板を取着したセラミック回路基板に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board having metal circuit boards attached to both sides of a ceramic substrate.

【0002】[0002]

【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に被着させたメタライズ金属層に銀−銅合金等
のロウ材を介して銅等から成る金属回路板を接合させた
セラミック回路基板、セラミック基板上に銀−銅共晶合
金にチタン、ジルコニウム、ハフニウムあるいはその水
素化物を添加した活性金属ロウ材を介して銅等から成る
金属回路板を直接接合させたセラミック回路基板、ある
いはセラミック基板上に銅板を載置させた後加熱し直接
セラミック基板と銅板とを接合させた所謂、DBC(D
irect Bond Copper)法によって作製
されたセラミック回路基板が用いられている。
2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a metallized metal layer adhered on a ceramic substrate is formed of a metal made of copper or the like via a brazing material such as a silver-copper alloy. A ceramic circuit board with circuit boards joined together, and a metal circuit board made of copper etc. directly joined on the ceramic substrate via an active metal brazing material obtained by adding titanium, zirconium, hafnium or its hydride to a silver-copper eutectic alloy A so-called DBC (D) in which a copper plate is placed on a ceramic circuit board or a ceramic substrate that has been heated and then directly bonded to the ceramic substrate and the copper plate.
A ceramic circuit board manufactured by an direct bond copper method is used.

【0003】また、これら各セラミック回路基板は金属
回路板の実装密度を高めるためにセラミック基板の上下
両面に金属回路板を接合させておき、これら上下両面の
金属回路板間をセラミック基板に設けた貫通孔内に充填
されているロウ材で電気的に接続することが行われてい
る。
In order to increase the mounting density of the metal circuit boards, these ceramic circuit boards are bonded to the upper and lower surfaces of the ceramic substrate, and the upper and lower surfaces of the metal circuit boards are provided on the ceramic substrate. An electrical connection is made with a brazing filler material filled in the through hole.

【0004】なお、前記セラミック回路基板、例えば、
セラミック基板上に被着させたメタライズ金属層にロウ
材を介して銅等から成る金属回路板を接合させたセラミ
ック回路基板は、一般に酸化アルミニウム質焼結体、窒
化アルミニウム質焼結体、窒化珪素質焼結体、ムライト
質焼結体等の電気絶縁性のセラミックス材料から成り、
上下両面に所定パターンのメタライズ金属層を有し、か
つ厚み方向に貫通する貫通孔を設けたセラミック基板を
準備し、次に前記セラミック基板の貫通孔内に、銀ロウ
粉末(銀と銅の合金粉末)に有機溶剤、溶媒を添加混合
して得たロウ材ペーストを充填するとともにメタライズ
金属層上に間に銀ロウ等のロウ材を挟んで所定パターン
の金属回路板を載置当接させ、しかる後、これを還元雰
囲気中、約900℃の温度に加熱し、ロウ材ペースト及
びロウ材を溶融させ、メタライズ金属層と金属回路板及
びセラミック基板の上下両面の金属回路板を各々、銀ロ
ウ等のロウ材を介して接合することによって製作され
る。
[0004] The ceramic circuit board, for example,
A ceramic circuit board in which a metal circuit board made of copper or the like is joined to a metallized metal layer adhered on a ceramic substrate via a brazing material is generally made of an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon nitride. Made of an electrically insulating ceramic material such as a porous sintered body, a mullite sintered body, etc.
A ceramic substrate having a predetermined pattern of metallized metal layers on both upper and lower surfaces and having a through hole penetrating in the thickness direction is prepared. Then, silver brazing powder (an alloy of silver and copper) is provided in the through hole of the ceramic substrate. Powder) with an organic solvent, a brazing material paste obtained by adding and mixing the solvent, and a metal circuit board having a predetermined pattern is placed and brought into contact with the metallized metal layer with a brazing material such as silver brazing interposed therebetween. Thereafter, this is heated to a temperature of about 900 ° C. in a reducing atmosphere to melt the brazing material paste and the brazing material. It is manufactured by joining through brazing materials such as.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、セラミック基板の
上下両面に接合されている金属回路板同士がセラミック
基板に設けた貫通孔内に充填されているロウ材を介して
電気的に接続されており、該セラミック基板に設けた貫
通孔内へのロウ材の充填はセラミック基板の貫通孔内に
銀ロウ粉末(銀と銅の合金粉末)に有機溶剤、溶媒を添
加混合して得たロウ材ペーストを充填させた後、約90
0℃の温度に加熱することによって行われ、この場合、
各銀ロウ粉末間に存在する空気が溶融した銀ロウ材中に
多量に抱き込まれて多孔質となり、導通抵抗が比抵抗で
7〜10μΩ・cmと高いものであった。そのため従来
のセラミック回路基板では金属回路板及び貫通孔内のロ
ウ材に10Aを超える大電流が流れると貫通孔内に充填
されたロウ材部分が抵抗発熱し、その熱が金属回路板上
に半田等の接着材を介して接着固定される半導体素子等
の電子部品に作用し、電子部品を高温として安定に作動
させることができないという欠点を有していた。
However, in this conventional ceramic circuit board, the metal circuit boards joined to the upper and lower surfaces of the ceramic board are filled with a brazing material filled in a through hole formed in the ceramic board. The through hole provided in the ceramic substrate is filled with a brazing filler metal by adding an organic solvent and a solvent to the silver brazing powder (alloy powder of silver and copper) in the through hole of the ceramic substrate. After adding and mixing the brazing material paste obtained by adding
This is done by heating to a temperature of 0 ° C., where
A large amount of air existing between the silver brazing powders was entrapped in the molten silver brazing material and became porous, and the conduction resistance was as high as 7 to 10 μΩ · cm in specific resistance. Therefore, in a conventional ceramic circuit board, when a large current exceeding 10 A flows through the metal circuit board and the brazing material in the through hole, the brazing material portion filled in the through hole generates resistance heat, and the heat is soldered onto the metal circuit board. It acts on an electronic component such as a semiconductor element which is bonded and fixed via an adhesive material such as the above, and has a drawback that the electronic component cannot be stably operated at a high temperature.

【0006】本発明は上記欠点に鑑み案出されたもの
で、その目的は抵抗発熱による多量の熱の発生を有効に
防止し、金属回路板に接続される半導体素子等の電子部
品を常に適温として正常、かつ安定に作動させることが
できるセラミック回路基板を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to effectively prevent the generation of a large amount of heat due to resistance heating and to keep electronic components such as semiconductor elements connected to a metal circuit board at an appropriate temperature. It is another object of the present invention to provide a ceramic circuit board that can operate normally and stably.

【0007】[0007]

【課題を解決するための手段】本発明のセラミック回路
基板は、貫通孔を有するセラミック基板の両面に前記貫
通孔を塞ぐように銅もしくはアルミニウムから成る金属
回路板を取着させるとともに貫通孔内に銅もしくはアル
ミニウムから成る金属柱を配置させ、該金属柱でセラミ
ック基板両面の金属回路板を接続したセラミック回路基
板であって、前記貫通孔の内壁面と前記金属柱の外壁面
との間に長さが30μm乃至200μmの空間を設けた
ことを特徴とするものである。
A ceramic circuit board according to the present invention has a metal circuit board made of copper or aluminum attached to both sides of a ceramic substrate having a through-hole so as to cover the through-hole. A ceramic circuit board in which metal pillars made of copper or aluminum are arranged, and the metal pillars connect metal circuit boards on both sides of the ceramic substrate, and a length is provided between an inner wall surface of the through hole and an outer wall surface of the metal pillar. Is provided with a space of 30 μm to 200 μm.

【0008】本発明のセラミック回路基板によれば、セ
ラミック基板の両面に取着されている金属回路板をセラ
ミック基板の貫通孔内に配置されている気孔がほとんど
なく、比抵抗が3μΩ・cm以下の銅もしくはアルミニ
ウムから成る金属柱を介して電気的に接続したことから
金属回路板及び金属柱に10Aを超える大電流が流れた
としても金属柱で抵抗発熱が起こり、多量の熱を発生す
ることは無く、その結果、金属回路板上に半田等の接着
材を用いて接着固定される半導体素子等の電子部品は常
に適温となり、長期間にわたって正常、かつ安定に作動
させることが可能となる。
According to the ceramic circuit board of the present invention, the metal circuit boards attached to both sides of the ceramic substrate are substantially free from pores arranged in the through holes of the ceramic substrate and have a specific resistance of 3 μΩ · cm or less. Because of the electrical connection through the metal pillar made of copper or aluminum, even if a large current exceeding 10A flows through the metal circuit board and the metal pillar, resistance heating occurs in the metal pillar and a large amount of heat is generated. As a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board using an adhesive such as solder are always at an appropriate temperature, and can be operated normally and stably for a long period of time.

【0009】また本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔の内壁面と金属柱の外壁面
との間に長さが30μm乃至200μmの空間を設けた
ことからセラミック回路基板に熱が加わった際、セラミ
ック基板と金属柱との間に両者の熱膨張係数の差によっ
て金属柱の外壁面が膨張し広がったとしてもその膨張は
前記空間に吸収されて金属柱の外壁面が貫通孔の内壁面
を押し広げてセラミック基板にクラックや割れを発生さ
せることは無く、その結果、セラミック回路基板を長期
間にわたって正常、かつ安定に使用することが可能とな
る。
Further, according to the ceramic circuit board of the present invention, since a space having a length of 30 μm to 200 μm is provided between the inner wall surface of the through hole of the ceramic substrate and the outer wall surface of the metal pillar, heat is applied to the ceramic circuit board. Is applied, even if the outer wall surface of the metal column expands and spreads due to the difference in thermal expansion coefficient between the ceramic substrate and the metal column, the expansion is absorbed by the space and the outer wall surface of the metal column penetrates. No cracks or cracks are generated in the ceramic substrate by expanding the inner wall surface of the hole, and as a result, the ceramic circuit substrate can be used normally and stably for a long period of time.

【0010】[0010]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明のセラミック回路基板
の一実施例を示し、1はセラミック基板、2はメタライ
ズ金属層、3は金属回路板である。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a ceramic circuit board according to the present invention, wherein 1 is a ceramic board, 2 is a metallized metal layer, and 3 is a metal circuit board.

【0011】前記セラミック基板1は四角形状をなし、
一部に厚み方向に貫通する貫通孔4が形成されており、
該貫通孔4内には金属柱5が挿着されている。
The ceramic substrate 1 has a square shape,
Through holes 4 penetrating in the thickness direction are partially formed,
A metal column 5 is inserted into the through hole 4.

【0012】また前記セラミック基板1はその上下両面
にメタライズ金属層2が被着されており、該メタライズ
金属層2には金属回路板3がロウ付けされている。
The ceramic substrate 1 has metallized metal layers 2 attached to the upper and lower surfaces thereof, and a metal circuit board 3 is brazed to the metallized metal layers 2.

【0013】前記セラミック基板1は酸化アルミニウム
質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化
アルミニウム質焼結体、窒化珪素質燒結体等の電気絶縁
材料から成り、例えば、酸化アルミニウム質焼結体から
成る場合には、酸化アルミニウム、酸化珪素、酸化マグ
ネシウム、酸化カルシウム等の原料粉末に適当な有機バ
インダー、可塑剤、溶剤を添加混合して泥漿状となすと
ともに該泥漿物を従来周知のドクターブレード法やカレ
ンダーロール法を採用することによってセラミックグリ
ーンシート(セラミック生シート)を形成し、しかる
後、前記セラミックグリーンシートに適当な打ち抜き加
工を施し、貫通孔4となる孔を有する所定形状に形成す
るとともに高温(約1600℃)で焼成することによっ
て、あるいは酸化アルミニウム等の原料粉末に適当な有
機溶剤、溶媒を添加混合して原料粉末を調整するととも
に該原料粉末をプレス成形機によって貫通孔4となる孔
を有した所定形状に形成し、しかる後、前記形成体を約
1600℃の温度で焼成することによって製作される。
The ceramic substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a silicon nitride sintered body. When it is made of an aluminum oxide-based sintered body, an appropriate organic binder, a plasticizer, and a solvent are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is formed. A ceramic green sheet (green ceramic sheet) is formed by employing a conventionally known doctor blade method or calendar roll method, and then the ceramic green sheet is subjected to an appropriate punching process to form a hole serving as a through hole 4. By sintering at a high temperature (about 1600 ° C.) A raw material powder such as minium is mixed with a suitable organic solvent and a solvent to prepare the raw material powder, and the raw material powder is formed into a predetermined shape having a hole to be a through hole 4 by a press molding machine. It is made by firing the compact at a temperature of about 1600 ° C.

【0014】前記セラミック基板1は金属回路板3を支
持する支持部材として作用し、その上下両面にメタライ
ズ金属層2が所定パターンに被着形成されており、該セ
ラミック基板1の上下両面に被着されているメタライズ
金属層2には所定パターンの金属回路板3がロウ付けさ
れている。
The ceramic substrate 1 functions as a support member for supporting the metal circuit board 3, and has metallized metal layers 2 formed on both upper and lower surfaces thereof in a predetermined pattern. A metal circuit board 3 having a predetermined pattern is brazed to the metallized metal layer 2 thus formed.

【0015】前記メタライズ金属層2は金属回路板3を
セラミック基板1にロウ付けする際の下地金属層として
作用し、タングステン、モリブデン、マンガン等の高融
点金属材料より成り、例えば、タングステン粉末に適当
な有機バインダー、可塑材、溶剤を添加混合して得た金
属ペーストを焼成によってセラミック基板1となるセラ
ミックグリーンシート(セラミック生シート)の上下両
面に予め従来周知のスクリーン印刷法により所定パター
ンに印刷塗布しておくことによってセラミック基板1の
上下両面に所定パターン、所定厚みに被着される。
The metallized metal layer 2 functions as a base metal layer when the metal circuit board 3 is brazed to the ceramic substrate 1 and is made of a high melting point metal material such as tungsten, molybdenum, manganese, etc. A metal paste obtained by adding and mixing an organic binder, a plasticizer, and a solvent is printed and applied in a predetermined pattern in advance on both upper and lower surfaces of a ceramic green sheet (ceramic raw sheet) to be a ceramic substrate 1 by firing. By doing so, a predetermined pattern and a predetermined thickness are attached to both upper and lower surfaces of the ceramic substrate 1.

【0016】なお、前記メタライズ金属層2はその表面
にニッケル、金等の良導電性で、耐蝕性及びロウ材との
濡れ性が良好な金属をメッキ法により1μm乃至20μ
mの厚みに被着させておくと、メタライズ金属層2の酸
化腐食を有効に防止することができるとともにメタライ
ズ金属層2と金属回路板3とのロウ付けを極めて強固と
なすことができる。従って、前記メタライズ金属層2の
酸化腐蝕を有効に防止し、メタライズ金属層2と金属回
路板3とのロウ付けを強固となすにはメタライズ金属層
2の表面にニッケル、金等の良導電性で、耐蝕性及びロ
ウ材との濡れ性が良好な金属を1μm乃至20μmの厚
みに被着させておくことが好ましい。
The metallized metal layer 2 is coated on its surface with a metal having good conductivity, such as nickel or gold, having good corrosion resistance and good wettability with a brazing material by a plating method.
When the metallized metal layer 2 is adhered to the metallized metal layer 2, the metallized metal layer 2 and the metal circuit board 3 can be extremely firmly brazed. Therefore, in order to effectively prevent the metallized metal layer 2 from being oxidized and corroded, and to firmly braze the metallized metal layer 2 and the metal circuit board 3, the surface of the metallized metal layer 2 must be made of a conductive material such as nickel or gold. Preferably, a metal having good corrosion resistance and good wettability with the brazing material is applied to a thickness of 1 μm to 20 μm.

【0017】前記セラミック基板1の上下両面に被着さ
れているメタライズ金属層2には金属回路板3がセラミ
ック基板1に設けた貫通孔4を塞ぐようにしてロウ材を
介して取着されている。
A metal circuit board 3 is attached to a metallized metal layer 2 attached to both upper and lower surfaces of the ceramic substrate 1 via a brazing material so as to cover a through hole 4 provided in the ceramic substrate 1. I have.

【0018】前記金属回路板3は銅もしくはアルミニウ
ムから成り、セラミック基板1の上下両面に被着形成さ
れているメタライズ金属層2上に銀ロウもしくはアルミ
ニウムロウ等のロウ材を介して取着される。
The metal circuit board 3 is made of copper or aluminum, and is mounted on the metallized metal layer 2 formed on the upper and lower surfaces of the ceramic substrate 1 via a brazing material such as silver brazing or aluminum brazing. .

【0019】なお、前記銅もしくはアルミニウムから成
る金属回路板3は、銅もしくはアルミニウム等のインゴ
ット(塊)に圧延加工法や打ち抜き加工法等、従来周知
の金属加工法を施すことによって、例えば、厚さが50
0μmで、所定パターン形状に形成される。
The metal circuit board 3 made of copper or aluminum can be formed, for example, by applying a conventionally known metal working method such as a rolling method or a punching method to an ingot of copper or aluminum. Saga 50
It is formed in a predetermined pattern shape at 0 μm.

【0020】また、前記金属回路板3は銅から成る場合
はこれを無酸素銅で形成しておくと、該無酸素銅はロウ
付けの際に銅の表面が銅中に存在する酸素により酸化さ
れることなくロウ材との濡れ性が良好となり、メタライ
ズ金属層2へのロウ材を介しての接合が強固となる。従
って、前記金属回路板3は銅から成る場合はこれを無酸
素銅で形成しておくことが好ましい。
When the metal circuit board 3 is made of copper, if the metal circuit board 3 is formed of oxygen-free copper, the surface of the copper is oxidized by oxygen existing in the copper during brazing. The wettability with the brazing material is improved without being performed, and the bonding to the metallized metal layer 2 via the brazing material is strengthened. Therefore, when the metal circuit board 3 is made of copper, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.

【0021】更に前記金属回路板3はその表面にニッケ
ル等から成る、良導電性で、かつ耐蝕性及びロウ材との
濡れ性が良好な金属をメッキ法により被着させておく
と、金属回路板3に酸化腐蝕が発生するのを有効に防止
することができるとともに金属回路板3と外部電気回路
との電気的接続及び金属回路板3への半導体素子等の電
子部品の接続を強固となすことができる。従って、前記
金属回路板3はその表面にニッケル等から成る、良導電
性で、かつ耐蝕性及びロウ材との濡れ性が良好な金属を
メッキ法により被着させておくことが好ましい。
Further, if the metal circuit board 3 is coated with a metal made of nickel or the like having good conductivity, good corrosion resistance and good wettability with the brazing material by a plating method, the metal circuit board 3 is provided with a metal circuit board. Oxidation and corrosion of the board 3 can be effectively prevented, and the electrical connection between the metal circuit board 3 and an external electric circuit and the connection of electronic components such as semiconductor elements to the metal circuit board 3 are firmly made. be able to. Therefore, it is preferable that a metal made of nickel or the like and having good conductivity, good corrosion resistance and good wettability with the brazing material is applied to the surface of the metal circuit board 3 by plating.

【0022】また更に前記金属回路板3の表面にニッケ
ルから成るメッキ層を被着させる場合、内部に燐を8乃
至15重量%含有させてニッケル−燐のアモルファス合
金としておくとニッケルから成るメッキ層の表面酸化を
良好に防止して半田との濡れ性等を長く維持することが
できる。従って、前記金属回路板3の表面にニッケルか
ら成るメッキ層を被着させる場合、内部に燐を8乃至1
5重量%含有させてニッケル−燐のアモルファス合金と
しておくことが好ましい。
Further, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, a nickel-phosphorus amorphous alloy containing phosphorus in an amount of 8 to 15% by weight may be used. Surface oxidation can be prevented well and the wettability with solder can be maintained for a long time. Therefore, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, phosphorous is contained inside the metal circuit board 3 in an amount of 8 to 1%.
It is preferable to contain 5% by weight to form a nickel-phosphorus amorphous alloy.

【0023】更にまた、前記金属回路板3の表面にニッ
ケル−燐のアモルファス合金からなるメッキ層を被着さ
せる場合、ニッケルに対する燐の含有量が8重量%未
満、あるいは15重量%を超えるとニッケル−燐のアモ
ルファス合金を形成するのが困難となってメッキ層に半
田を強固に接着させることができなくなる危険性があ
る。従って、前記金属回路板3の表面にニッケル−燐の
アモルファス合金からなるメッキ層を被着させる場合に
はニッケルに対する燐の含有量を8乃至15重量%の範
囲としておくことが好ましく、好適には10乃至15重
量%の範囲がよい。
Further, when a plating layer made of a nickel-phosphorus amorphous alloy is applied to the surface of the metal circuit board 3, if the content of phosphorus with respect to nickel is less than 8% by weight or more than 15% by weight, nickel is added. There is a danger that it becomes difficult to form an amorphous alloy of phosphorus and the solder cannot be firmly bonded to the plating layer. Therefore, when a plating layer made of a nickel-phosphorus amorphous alloy is applied to the surface of the metal circuit board 3, the content of phosphorus with respect to nickel is preferably set in the range of 8 to 15% by weight, and more preferably. The range is preferably 10 to 15% by weight.

【0024】また、前記金属回路板3の表面に被着され
るニッケルから成るメッキ層は、その厚みが1.5μm
未満の場合、金属回路板3の表面をニッケルから成るメ
ッキ層で完全に被覆することができず、金属回路板3の
酸化腐蝕を有効に防止することができなくなる危険性が
あり、また3μmを超えるとニッケルから成るメッキ層
の内部に内在する内在応力が大きくなってセラミック基
板1に反りや割れ等が発生してしまう。特にセラミック
基板1の厚さが700μm以下の薄いものになった場合
にはこのセラミック基板1の反りや割れ等が顕著となっ
てしまう。従って、前記金属回路板3の表面に被着され
るニッケルから成るメッキ層はその厚みを1.5μm乃
至3μmの範囲としておくことが好ましい。
The plating layer made of nickel, which is deposited on the surface of the metal circuit board 3, has a thickness of 1.5 μm.
If it is less than 3, the surface of the metal circuit board 3 cannot be completely covered with the plating layer made of nickel, and there is a risk that oxidation corrosion of the metal circuit board 3 cannot be effectively prevented. If it exceeds, the intrinsic stress existing inside the plating layer made of nickel becomes large, and the ceramic substrate 1 will be warped or cracked. In particular, when the thickness of the ceramic substrate 1 is as thin as 700 μm or less, warpage or cracking of the ceramic substrate 1 becomes remarkable. Therefore, it is preferable that the thickness of the nickel plating layer deposited on the surface of the metal circuit board 3 be in the range of 1.5 μm to 3 μm.

【0025】また更に、前記セラミック基板1に被着さ
れたメタライズ金属層2への金属回路板3のロウ付け
は、メタライズ金属層2上に金属回路板3を、間に、例
えば、銀ロウ材(銀:72重量%、銅:28重量%)や
アルミニウムロウ材(アルミニウム:88重量%、シリ
コン:12重量%)等から成るロウ材を挟んで載置さ
せ、しかる後、金属回路板3に30乃至100g/cm
2の荷重を加えた状態で真空中もしくは中性、還元雰囲
気中、所定温度(銀ロウ材の場合は約900℃、アルミ
ニウムロウ材の場合は約600℃)に加熱処理し、ロウ
材を溶融せしめ、該溶融したロウ材でメタライズ金属層
2と金属回路板3とを接合させることによって行われ
る。
Further, the brazing of the metal circuit board 3 to the metallized metal layer 2 adhered to the ceramic substrate 1 is performed by placing the metal circuit board 3 on the metallized metal layer 2 with, for example, a silver brazing material. (Silver: 72% by weight, copper: 28% by weight), aluminum brazing material (aluminum: 88% by weight, silicon: 12% by weight), and the like. 30 to 100 g / cm
In a vacuum or neutral or reducing atmosphere with a load of 2 applied, heat treatment to a predetermined temperature (about 900 ° C for silver brazing material, about 600 ° C for aluminum brazing material) to melt the brazing material In this case, the metallized metal layer 2 and the metal circuit board 3 are joined by the molten brazing material.

【0026】前記金属回路板3がロウ付けされたセラミ
ック基板1はまた貫通孔4の内部に金属柱5が配置され
ており、該金属柱5はセラミック基板1の上下両面のロ
ウ付けされている金属回路板3間を電気的に接続する作
用をなす。
The ceramic substrate 1 to which the metal circuit board 3 is brazed also has metal columns 5 disposed inside the through holes 4, and the metal columns 5 are brazed on the upper and lower surfaces of the ceramic substrate 1. It functions to electrically connect between the metal circuit boards 3.

【0027】前記金属柱5は比抵抗が3μΩ・cm以下
と非常に小さい良導電性の銅(1.72μΩ・cm)も
しくはアルミニウム(2.65μΩ・cm)により形成
されており、金属柱5の比抵抗が小さい、即ち、金属柱
5の導通抵抗が小さいことから金属回路板3及び金属柱
5に10Aを超える大電流が流れたとしても金属回路板
3及び金属柱5より抵抗発熱により大量の熱が発生する
ことは無く、その結果、金属回路板3上に半田等の接着
材を用いて接着固定される半導体素子等の電子部品は常
に適温となり、長期間にわたって正常、かつ安定に作動
させることが可能となる。
The metal column 5 is made of highly conductive copper (1.72 μΩ · cm) or aluminum (2.65 μΩ · cm) having a very small specific resistance of 3 μΩ · cm or less. Since the specific resistance is small, that is, since the conduction resistance of the metal pillar 5 is small, even if a large current exceeding 10 A flows through the metal circuit board 3 and the metal pillar 5, a large amount of resistance heat is generated from the metal circuit board 3 and the metal pillar 5. No heat is generated, and as a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board 3 by using an adhesive such as solder always have an appropriate temperature and operate normally and stably for a long period of time. It becomes possible.

【0028】前記金属柱5は、例えば、銅もしくはアル
ミニウムのインゴット(塊)に圧延加工法や打ち抜き加
工法、引き抜き加工法等、従来周知の金属加工法を施す
ことによって円柱状に形成し、その後金属柱の上下両端
面に、例えば、銅の場合には銀ロウ材もしくはアルミニ
ウムの場合にはアルミニウムロウ材等のロウ材を被着さ
せて製作され、セラミック基板1に設けられた貫通孔4
内に、両端面をセラミック基板1の上下両面に取着され
ている金属回路板3に前記ロウ材を介して接合された状
態で配置される。
The metal column 5 is formed into a column shape by subjecting a copper or aluminum ingot (lumps) to a conventionally known metal processing method such as a rolling method, a punching method, or a drawing method. For example, a through-hole 4 provided in the ceramic substrate 1 is manufactured by attaching a brazing material such as a silver brazing material in the case of copper or an aluminum brazing material in the case of aluminum to the upper and lower end surfaces of the metal pillar.
Inside, it is arranged in a state where both end surfaces are joined to the metal circuit board 3 attached to the upper and lower surfaces of the ceramic substrate 1 via the brazing material.

【0029】なお、前記金属柱5は銅から成る場合には
これを無酸素銅で形成しておくと、該無酸素銅はロウ付
けの際に銅の表面が銅中に存在する酸素により酸化され
ることなくロウ材との濡れ性が良好となり、金属回路板
3へのロウ材を介しての接合が強固となる。従って、前
記金属柱5は銅から成る場合にはこれを無酸素銅で形成
しておくことが好ましい。
When the metal column 5 is made of copper, if the metal column 5 is formed of oxygen-free copper, the surface of the copper is oxidized by the oxygen existing in the copper during brazing. The wettability with the brazing material is improved without being performed, and the bonding to the metal circuit board 3 via the brazing material is strengthened. Therefore, when the metal column 5 is made of copper, it is preferable to form the metal column 5 with oxygen-free copper.

【0030】また前記金属柱5はその径が200μm未
満となると金属柱5の導通抵抗が大きくなって10Aを
超える大電流が流れた場合抵抗発熱により多量の熱が発
生してしまう危険性がある。従って、前記金属柱5はそ
の径を200μm以上、好適には350μm以上としてお
くこことがよい。特に金属柱5の径を350μm以上と
しておくと金属柱5に20Aを超える大電流が流れても
抵抗発熱による多量の熱を発生することはなく、これに
よって金属回路板3上に半田等の接着材を用いて接着固
定される半導体素子等の電子部品を常に適温となすこと
ができ、電子部品を長期間にわたって正常、かつ安定に
作動させることが可能となる。
When the diameter of the metal column 5 is less than 200 μm, the conduction resistance of the metal column 5 increases, and when a large current exceeding 10 A flows, a large amount of heat may be generated due to resistance heating. . Therefore, it is preferable that the diameter of the metal column 5 is 200 μm or more, preferably 350 μm or more. In particular, if the diameter of the metal column 5 is set to 350 μm or more, even if a large current exceeding 20 A flows through the metal column 5, a large amount of heat due to resistance heating is not generated, thereby bonding the solder or the like onto the metal circuit board 3. An electronic component such as a semiconductor element bonded and fixed using a material can always be kept at an appropriate temperature, and the electronic component can be operated normally and stably for a long period of time.

【0031】更に本発明においてはセラミック基板1の
貫通孔4の内壁面と金属柱5の外壁面との間に長さが3
0μm乃至200μmの空間を設けておくことが重要で
ある。
Further, in the present invention, the length between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal pillar 5 is 3 mm.
It is important to provide a space of 0 μm to 200 μm.

【0032】前記セラミック基板1の貫通孔4内壁面と
金属柱5の外壁面との間に長さが30μm乃至200μ
mの空間を設けておくとセラミック回路基板に熱が加わ
った際、セラミック基板1と金属柱5との間に両者の熱
膨張係数の差によって金属柱5の外壁面が膨張し広がっ
たとしてもその膨張は前記空間に吸収されて金属柱5の
外壁面が貫通孔4の内壁面を押し広げてセラミック基板
1にクラックや割れを発生させることは無く、その結
果、セラミック回路基板を長期間にわたって正常、かつ
安定に使用することが可能となる。
The length between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is 30 μm to 200 μm.
If a space of m is provided, when heat is applied to the ceramic circuit board, even if the outer wall surface of the metal column 5 expands and spreads due to the difference in thermal expansion coefficient between the ceramic substrate 1 and the metal column 5, The expansion is absorbed in the space, and the outer wall surface of the metal column 5 does not spread the inner wall surface of the through hole 4 to cause cracks or cracks in the ceramic substrate 1. It can be used normally and stably.

【0033】なお、前記セラミック基板1の貫通孔4内
壁面と金属柱5外壁面との間の長さは30μm未満の場
合、セラミック回路基板に熱が加わった際、セラミック
基板1と金属柱5との熱膨張係数の差によって膨張した
金属柱5の外壁面がセラミック基板1の貫通孔4内壁面
を押し広げてセラミック基板1にクラックや割れが発生
してしまい、また200μmを超えた場合は、セラミッ
ク基板1の貫通孔4に金属柱5を挿着する際、金属柱5
が傾いたり倒れたりすることによって金属回路板3と確
実、強固な接合が困難となり、金属回路板属3と金属柱
5との間の導通抵抗が大きくなって10Aを超える大電
流が流れた時に抵抗発熱により多量の熱が発生し金属回
路板3上に接着固定される半導体素子等の電子部品に誤
動作を招来させてしまう。従って、前記セラミック基板
1の貫通孔4の内壁面と金属柱5の外壁面との間の空間
はその長さが30μm乃至200μmの範囲に特定され
る。
When the length between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is less than 30 μm, when heat is applied to the ceramic circuit board, the ceramic substrate 1 and the metal column 5 When the outer wall surface of the metal column 5 expanded due to the difference in thermal expansion coefficient between the metal substrate 5 and the inner wall surface of the through-hole 4 of the ceramic substrate 1 expands, cracks and cracks occur in the ceramic substrate 1, and when it exceeds 200 μm, When the metal column 5 is inserted into the through hole 4 of the ceramic substrate 1, the metal column 5
When the metal circuit board 3 and the metal pillar 5 are inclined and fall down, it is difficult to securely and firmly join the metal circuit board 3 and the metal pillar 5, and a large current exceeding 10A flows. A large amount of heat is generated due to the resistance heat generation, which causes malfunction of electronic components such as semiconductor elements bonded and fixed on the metal circuit board 3. Therefore, the space between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is specified to have a length in the range of 30 μm to 200 μm.

【0034】かくして、上述のセラミック回路基板によ
れば、セラミック基板1の上下両面に取着された金属回
路板3に半田等の接着材を介して半導体素子等の電子部
品を接着固定させるとともに半導体素子等の電子部品の
各電極をボンディングワイヤ等の電気的接続手段を介し
て金属回路板3に電気的に接続させれば半導体素子等の
電子部品はセラミック回路基板に実装され、同時に金属
回路板3を外部電気回路に電気的に接続させれば半導体
素子等の電子部品は外部電気回路に接続されることとな
る。
Thus, according to the above-described ceramic circuit board, electronic components such as semiconductor elements are bonded and fixed to the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1 via an adhesive such as solder. If each electrode of an electronic component such as a device is electrically connected to the metal circuit board 3 via an electrical connection means such as a bonding wire, the electronic component such as a semiconductor device is mounted on the ceramic circuit board, and at the same time, the metal circuit board is mounted. If the electronic component 3 is electrically connected to an external electric circuit, electronic components such as semiconductor elements are connected to the external electric circuit.

【0035】次に本発明の他の実施例を図2に基づいて
説明する。なお、図中、図1と同一箇所については同一
符号が付してある。
Next, another embodiment of the present invention will be described with reference to FIG. In the figure, the same parts as those in FIG. 1 are denoted by the same reference numerals.

【0036】図2のセラミック回路基板は、セラミック
基板1の上下両面に所定パターンの金属回路板3が活性
金属ロウ材6を介して取着されており、同時にセラミッ
ク基板1に設けた厚み方向に貫通する貫通孔4内に金属
柱5がその両端面をロウ材を介して金属回路板3に取着
することによって配置されている。
In the ceramic circuit board of FIG. 2, a metal circuit board 3 of a predetermined pattern is attached to both upper and lower surfaces of the ceramic board 1 via an active metal brazing material 6, and at the same time, in the thickness direction provided on the ceramic board 1. Metal pillars 5 are arranged in through holes 4 penetrating by attaching both end surfaces to metal circuit board 3 via brazing material.

【0037】前記セラミック基板1に設けた貫通孔4内
に配置されている金属柱5はその両端が金属回路板3に
ロウ材を介して取着されており、これによってセラミッ
ク基板1の上下両面に取着されている金属回路板3は金
属柱5を介して電気的に接続されることとなる。
The metal pillars 5 arranged in the through holes 4 provided in the ceramic substrate 1 have both ends attached to the metal circuit board 3 via brazing materials, whereby the upper and lower surfaces of the ceramic substrate 1 Is electrically connected via the metal pillar 5.

【0038】前記貫通孔4を有するセラミック基板1
は、酸化アルミニウム質焼結体、ムライト質焼結体、窒
化珪素質焼結体、窒化アルミニウム質焼結体、炭化珪素
質焼結体等の電気絶縁材料で形成されおり、例えば、窒
化珪素質焼結体から成る場合、窒化珪素、酸化アルミニ
ウム、酸化マグネシウム、酸化イットリウム等の原料粉
末に適当な有機バインダー、可塑剤、溶剤を添加混合し
て泥漿状となすとともに該泥漿物を従来周知のドクター
ブレード法やカレンダーロール法を採用することによっ
てセラミックグリーンシート(セラミック生シート)を
形成し、次に前記セラミックグリーンシートに適当な打
ち抜き加工を施し、所定形状となすとともに必要に応じ
て複数枚を積層して成形体となし、しかる後、これを窒
素雰囲気等の非酸化性雰囲気中、1600乃至2000
℃の高温で焼成することによって製作される。
The ceramic substrate 1 having the through holes 4
Is formed of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon nitride sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. In the case of a sintered body, raw materials such as silicon nitride, aluminum oxide, magnesium oxide, and yttrium oxide are mixed with an appropriate organic binder, a plasticizer, and a solvent to form a slurry, and the slurry is mixed with a conventionally known doctor. A ceramic green sheet (ceramic green sheet) is formed by employing a blade method or a calendar roll method, and then the ceramic green sheet is subjected to an appropriate punching process to form a predetermined shape, and a plurality of sheets are laminated as necessary. Then, it is formed into a molded body.
It is manufactured by firing at a high temperature of ° C.

【0039】また前記セラミック基板1はその上下両面
でセラミック基板1に設けた貫通孔4を塞ぐように金属
回路板3が活性金属ロウ材6を介して取着されており、
該金属回路板3は銅もしくはアルミニウムから成り、銅
もしくはアルミニウムのインゴット(塊)に圧延加工法
や打ち抜き加工法等、従来周知の金属加工法を施すこと
によって、例えば、500μmの厚みで、所定パターン
に形成される。
Further, a metal circuit board 3 is attached via an active metal brazing material 6 so as to cover the through holes 4 formed in the ceramic substrate 1 on both upper and lower surfaces of the ceramic substrate 1.
The metal circuit board 3 is made of copper or aluminum. By applying a conventionally known metal working method such as a rolling method or a punching method to a copper or aluminum ingot, a predetermined pattern having a thickness of, for example, 500 μm is formed. Formed.

【0040】なお、前記金属回路板3は銅から成る場合
はこれを無酸素銅で形成しておくと、該無酸素銅は活性
金属ロウ材6を介して取着する際、銅の表面が銅中に存
在する酸素により酸化されることなく活性金属ロウ材6
との濡れ性が良好となり、金属回路板3のセラミック基
板1への活性金属ロウ材6を介しての取着接合が強固と
なる。従って、前記金属回路板3は銅から成る場合はこ
れを無酸素銅で形成しておくことが好ましい。
When the metal circuit board 3 is made of copper, it is formed of oxygen-free copper. When the oxygen-free copper is attached via the active metal brazing material 6, the surface of the copper is Active metal brazing material 6 without being oxidized by oxygen existing in copper
The wettability of the metal circuit board 3 with the ceramic substrate 1 via the active metal brazing material 6 becomes strong. Therefore, when the metal circuit board 3 is made of copper, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.

【0041】また前記セラミック基板1は貫通孔4内部
に金属柱5が配置されており、該金属柱5はセラミック
基板1の上下両面のロウ付けされている金属回路板3間
を電気的に接続する作用をなす。
The ceramic substrate 1 has metal pillars 5 disposed inside the through holes 4. The metal columns 5 electrically connect the metal circuit boards 3 on the upper and lower surfaces of the ceramic substrate 1, which are brazed. To act.

【0042】前記金属柱5は比抵抗が3μΩ・cm以下
と非常に小さい良導電性の銅(1.72μΩ・cm)も
しくはアルミニウム(2.65μΩ・cm)により形成
されており、金属柱5の比抵抗が小さい、即ち、金属柱
5の導通抵抗が小さいことから金属回路板3及び金属柱
5に10Aを超える大電流が流れたとしても金属回路板
3及び金属柱5より抵抗発熱により大量の熱が発生する
ことは無く、その結果、金属回路板3上に半田等の接着
材を用いて接着固定される半導体素子等の電子部品は常
に適温となり、長期間にわたって正常、かつ安定に作動
させることが可能となる。
The metal column 5 is made of highly conductive copper (1.72 μΩ · cm) or aluminum (2.65 μΩ · cm) having a very small specific resistance of 3 μΩ · cm or less. Since the specific resistance is small, that is, since the conduction resistance of the metal pillar 5 is small, even if a large current exceeding 10 A flows through the metal circuit board 3 and the metal pillar 5, a large amount of resistance heat is generated from the metal circuit board 3 and the metal pillar 5. No heat is generated, and as a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board 3 by using an adhesive such as solder always have an appropriate temperature and operate normally and stably for a long period of time. It becomes possible.

【0043】前記金属柱5は、例えば、銅もしくはアル
ミニウムのインゴット(塊)に圧延加工法や打ち抜き加
工法、引き抜き加工法等、従来周知の金属加工法を施す
ことによって円柱状に形成し、その後金属柱の上下両端
面に、例えば、銅の場合には銀ロウ材もしくはアルミニ
ウムの場合にはアルミニウムロウ材等のロウ材を被着さ
せて製作され、セラミック基板1に設けられた貫通孔4
内に、両端面をセラミック基板1の上下両面に取着され
ている金属回路板3に前記ロウ材を介して接合された状
態で配置される。
The metal column 5 is formed into a column shape by subjecting a copper or aluminum ingot (lumps) to a conventionally known metal processing method such as a rolling method, a punching method, or a drawing method. For example, a through-hole 4 provided in the ceramic substrate 1 is manufactured by attaching a brazing material such as a silver brazing material in the case of copper or an aluminum brazing material in the case of aluminum to the upper and lower end surfaces of the metal pillar.
Inside, it is arranged in a state where both end surfaces are joined to the metal circuit board 3 attached to the upper and lower surfaces of the ceramic substrate 1 via the brazing material.

【0044】なお、前記金属柱5は銅から成る場合には
これを無酸素銅で形成しておくと、該無酸素銅はロウ付
けの際に銅の表面が銅中に存在する酸素により酸化され
ることなくロウ材との濡れ性が良好となり、金属回路板
3へのロウ材を介しての接合が強固となる。従って、前
記金属柱5は銅から成る場合にはこれを無酸素銅で形成
しておくことが好ましい。
When the metal column 5 is made of copper, if the metal column 5 is formed of oxygen-free copper, the surface of the copper is oxidized by oxygen existing in the copper during brazing. The wettability with the brazing material is improved without being performed, and the bonding to the metal circuit board 3 via the brazing material is strengthened. Therefore, when the metal column 5 is made of copper, it is preferable to form the metal column 5 with oxygen-free copper.

【0045】また前記金属柱5はその径が200μm未
満となると金属柱5の導通抵抗が大きくなって10Aを
超える大電流が流れた場合抵抗発熱により多量の熱が発
生してしまう危険性がある。従って、前記金属柱5はそ
の径を200μm以上、好適には350μm以上としてお
くこことがよい。特に金属柱5の径を350μm以上と
しておくと金属柱5に20Aを超える大電流が流れても
抵抗発熱による多量の熱を発生することはなく、これに
よって金属回路板3上に半田等の接着材を用いて接着固
定される半導体素子等の電子部品を常に適温となすこと
ができ、電子部品を長期間にわたって正常、かつ安定に
作動させることが可能となる。
When the diameter of the metal column 5 is less than 200 μm, the conduction resistance of the metal column 5 increases, and when a large current exceeding 10 A flows, a large amount of heat may be generated due to resistance heating. . Therefore, it is preferable that the diameter of the metal column 5 is 200 μm or more, preferably 350 μm or more. In particular, if the diameter of the metal column 5 is set to 350 μm or more, even if a large current exceeding 20 A flows through the metal column 5, a large amount of heat due to resistance heating is not generated, thereby bonding the solder or the like onto the metal circuit board 3. An electronic component such as a semiconductor element bonded and fixed using a material can always be kept at an appropriate temperature, and the electronic component can be operated normally and stably for a long period of time.

【0046】更に前記金属回路板3は活性金属ロウ材6
を使用することによってメタライズ金属層を不要として
セラミック基板1の上下両面にロウ付け取着されてお
り、該活性金属ロウ材6としては金属回路板3が銅で形
成されている場合は銀−銅共晶合金にチタン、ジルコニ
ウム、ハフニウム等の金属もしくはその水素化物を2乃
至5重量%添加させたものが、また金属回路板3がアル
ミニウムで形成されている場合はアルミニウム−シリコ
ン共晶合金にチタン、ジルコニウム、ハフニウム等の金
属もしくはその水素化物を2乃至5重量%添加させたも
のが好適に使用される。
Further, the metal circuit board 3 is made of an active metal brazing material 6.
Is used, and the metallized metal layer is not required, so that the metallized metal layer is not required, and the upper and lower surfaces of the ceramic substrate 1 are brazed and attached. When the metal circuit board 3 is formed of copper, the active metal brazing material 6 is silver-copper. A eutectic alloy to which a metal such as titanium, zirconium or hafnium or a hydride thereof is added in an amount of 2 to 5% by weight, or when the metal circuit board 3 is formed of aluminum, an aluminum-silicon eutectic alloy is added to titanium. , Zirconium, hafnium or other metal or a hydride thereof is preferably added in an amount of 2 to 5% by weight.

【0047】前記活性金属ロウ材6を使用しての金属回
路板3の貫通孔4を有するセラミック基板1への取着は
まず、例えば、金属回路板3が銅から成る場合は銀−銅
共晶合金にチタン、ジルコニウム、ハフニウム等の金属
もしくはその水素化物を2乃至5重量%添加させたも
の、またアルミニウムから成る場合はにアルミニウム−
シリコン共晶合金にチタン、ジルコニウム、ハフニウム
等の金属もしくはその水素化物を2乃至5重量%添加さ
せたものに有機溶剤、溶媒を混合して活性金属ロウ材ペ
ーストを作成し、次にセラミック基板1の上下両面に前
記活性金属ロウ材ペーストを従来周知のスクリーン印刷
法を採用することによって所定パターンに印刷塗布し、
次に前記セラミック基板1の貫通孔4内に金属柱5を挿
入配置させるとともにセラミック基板1の上下両面に印
刷塗布されている活性金属ロウ材ペースト上に金属回路
板3を載置させ、しかる後、これを真空中もしくは中
性、還元雰囲気中、所定温度(銅の場合は約900℃、
アルミニウムの場合は約600℃)で加熱処理し、活性
金属ロウ材6及び金属柱5の両端面に被着されたロウ材
を溶融せしめ、該溶融した活性金属ロウ材6及びロウ材
でセラミック基板1と金属回路板3及び金属回路板3と
金属柱5とを接合させることによって行われる。
Attachment of the metal circuit board 3 to the ceramic substrate 1 having the through holes 4 using the active metal brazing material 6 is performed, for example, when the metal circuit board 3 is made of copper, silver-copper is used. Alloys such as titanium, zirconium, hafnium or the like, or hydrides thereof added in an amount of 2 to 5% by weight.
An active metal brazing material paste is prepared by mixing an organic solvent and a solvent with addition of a metal such as titanium, zirconium, hafnium or a hydride thereof to a silicon eutectic alloy in an amount of 2 to 5% by weight, and then forming an active metal brazing paste. The active metal brazing material paste is printed and applied in a predetermined pattern on both upper and lower surfaces by employing a conventionally known screen printing method,
Next, the metal pillars 5 are inserted and arranged in the through holes 4 of the ceramic substrate 1 and the metal circuit board 3 is placed on the active metal brazing material paste printed and applied on both the upper and lower surfaces of the ceramic substrate 1. , At a predetermined temperature (about 900 ° C for copper,
Heat treatment is performed at about 600 ° C. for aluminum) to melt the active metal brazing material 6 and the brazing material adhered to both end surfaces of the metal pillars 5. The molten active metal brazing material 6 and the brazing material are used to form a ceramic substrate. 1 and the metal circuit board 3 and the metal circuit board 3 and the metal column 5 are joined.

【0048】かかるセラミック回路基板は上述の実施例
と同様、金属柱5の比抵抗が3μΩ・cm以下と小さ
い、即ち、金属柱5の導通抵抗が小さいことから金属回
路板3及び金属柱5に10Aを超える大電流が流れたと
しても金属回路板3及び金属柱5より抵抗発熱により大
量の熱が発生することは無く、その結果、金属回路板3
上に半田等の接着材を用いて接着固定される半導体素子
等の電子部品は常に適温となり、長期間にわたって正
常、かつ安定に作動させることが可能となる。
In this ceramic circuit board, the specific resistance of the metal column 5 is as small as 3 μΩ · cm or less, that is, the conduction resistance of the metal column 5 is small, as in the above-described embodiment. Even if a large current exceeding 10 A flows, a large amount of heat is not generated from the metal circuit board 3 and the metal pillar 5 due to resistance heating, and as a result, the metal circuit board 3
Electronic components such as semiconductor elements, which are adhered and fixed using an adhesive such as solder, are always at an appropriate temperature, and can be operated normally and stably for a long period of time.

【0049】また本発明においてはセラミック基板1の
貫通孔4の内壁面と金属柱5の外壁面との間に長さが3
0μm乃至200μmの空間を設けておくことが重要で
ある。
In the present invention, the length between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is 3 mm.
It is important to provide a space of 0 μm to 200 μm.

【0050】前記セラミック基板1の貫通孔4内壁面と
金属柱5の外壁面との間に長さが30μm乃至200μ
mの空間を設けておくとセラミック回路基板に熱が加わ
った際、セラミック基板1と金属柱5との間に両者の熱
膨張係数の差によって金属柱5の外壁面が膨張し広がっ
たとしてもその膨張は前記空間に吸収されて金属柱5の
外壁面が貫通孔4の内壁面を押し広げてセラミック基板
1にクラックや割れを発生させることは無く、その結
果、セラミック回路基板を長期間にわたって正常、かつ
安定に使用することが可能となる。
The length between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is 30 μm to 200 μm.
If a space of m is provided, when heat is applied to the ceramic circuit board, even if the outer wall surface of the metal column 5 expands and spreads due to the difference in thermal expansion coefficient between the ceramic substrate 1 and the metal column 5, The expansion is absorbed in the space, and the outer wall surface of the metal column 5 does not spread the inner wall surface of the through hole 4 to cause cracks or cracks in the ceramic substrate 1. It can be used normally and stably.

【0051】なお、前記セラミック基板1の貫通孔4内
壁面と金属柱5外壁面との間の長さは30μm未満の場
合、セラミック回路基板に熱が加わった際、セラミック
基板1と金属柱5との熱膨張係数の差によって膨張した
金属柱5の外壁面がセラミック基板1の貫通孔4内壁面
を押し広げてセラミック基板1にクラックや割れが発生
してしまい、また200μmを超えた場合は、セラミッ
ク基板1の貫通孔4に金属柱5を挿着する際、金属柱5
が傾いたり倒れたりすることによって金属回路板3と確
実、強固な接合が困難となり、金属回路板属3と金属柱
5との間の導通抵抗が大きくなって10Aを超える大電
流が流れた時に抵抗発熱により多量の熱が発生し金属回
路板3上に接着固定される半導体素子等の電子部品に誤
動作を招来させてしまう。従って、前記セラミック基板
1の貫通孔4の内壁面と金属柱5の外壁面との間の空間
はその長さが30μm乃至200μmの範囲に特定され
る。
When the length between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is less than 30 μm, when heat is applied to the ceramic circuit board, the ceramic substrate 1 and the metal column 5 When the outer wall surface of the metal column 5 expanded due to the difference in thermal expansion coefficient between the metal substrate 5 and the inner wall surface of the through-hole 4 of the ceramic substrate 1 expands, cracks and cracks occur in the ceramic substrate 1, and when it exceeds 200 μm, When the metal column 5 is inserted into the through hole 4 of the ceramic substrate 1, the metal column 5
When the metal circuit board 3 and the metal pillar 5 are inclined and fall down, it is difficult to securely and firmly join the metal circuit board 3 and the metal pillar 5, and a large current exceeding 10A flows. A large amount of heat is generated due to the resistance heat generation, which causes malfunction of electronic components such as semiconductor elements bonded and fixed on the metal circuit board 3. Therefore, the space between the inner wall surface of the through hole 4 of the ceramic substrate 1 and the outer wall surface of the metal column 5 is specified to have a length in the range of 30 μm to 200 μm.

【0052】なお本発明は上述の実施例に限定されるも
のではなく、本発明の趣旨を逸脱しない範囲であれば種
々の変更は可能である。
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

【0053】[0053]

【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板の両面に取着されている金属回路板をセ
ラミック基板の貫通孔内に配置されている気孔がほとん
どなく、比抵抗が3μΩ・cm以下の銅もしくはアルミ
ニウムから成る金属柱を介して電気的に接続したことか
ら金属回路板及び金属柱に10Aを超える大電流が流れ
たとしても金属柱で抵抗発熱が起こり、多量の熱を発生
することは無く、その結果、金属回路板上に半田等の接
着材を用いて接着固定される半導体素子等の電子部品は
常に適温となり、長期間にわたって正常、かつ安定に作
動させることが可能となる。
According to the ceramic circuit board of the present invention,
The metal circuit boards attached to both sides of the ceramic substrate are electrically connected to each other through metal columns made of copper or aluminum having a specific resistance of 3 μΩ · cm or less with few pores arranged in the through holes of the ceramic substrate. Therefore, even if a large current exceeding 10 A flows through the metal circuit board and the metal pillar, resistance heat is generated in the metal pillar and a large amount of heat is not generated. As a result, solder or the like is formed on the metal circuit board. Electronic components, such as semiconductor elements, which are bonded and fixed using the above-mentioned adhesive, are always at an appropriate temperature, and can be operated normally and stably for a long period of time.

【0054】また本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔の内壁面と金属柱の外壁面
との間に長さが30μm乃至200μmの空間を設けた
ことからセラミック回路基板に熱が加わった際、セラミ
ック基板と金属柱との間に両者の熱膨張係数の差によっ
て金属柱の外壁面が膨張し広がったとしてもその膨張は
前記空間に吸収されて金属柱の外壁面が貫通孔の内壁面
を押し広げてセラミック基板にクラックや割れを発生さ
せることは無く、その結果、セラミック回路基板を長期
間にわたって正常、かつ安定に使用することが可能とな
る。
According to the ceramic circuit board of the present invention, a space having a length of 30 μm to 200 μm is provided between the inner wall surface of the through-hole of the ceramic substrate and the outer wall surface of the metal pillar. Is applied, even if the outer wall surface of the metal column expands and spreads due to the difference in thermal expansion coefficient between the ceramic substrate and the metal column, the expansion is absorbed by the space and the outer wall surface of the metal column penetrates. No cracks or cracks are generated in the ceramic substrate by expanding the inner wall surface of the hole, and as a result, the ceramic circuit substrate can be used normally and stably for a long period of time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のセラミック回路基板の一実施例を示す
断面図である。
FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board of the present invention.

【図2】本発明のセラミック回路基板の他の実施例を示
す断面図である。
FIG. 2 is a sectional view showing another embodiment of the ceramic circuit board of the present invention.

【符号の説明】[Explanation of symbols]

1・・・・セラミック基板 2・・・・メタライズ金属層 3・・・・金属回路板 4・・・・貫通孔 5・・・・金属柱 6・・・・活性金属ロウ材 DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Metallized metal layer 3 ... Metal circuit board 4 ... Through-hole 5 ... Metal column 6 ... Active metal brazing material

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】貫通孔を有するセラミック基板の両面に前
記貫通孔を塞ぐように銅もしくはアルミニウムから成る
金属回路板を取着させるとともに貫通孔内に銅もしくは
アルミニウムから成る金属柱を配置させ、該金属柱でセ
ラミック基板両面の金属回路板を接続したセラミック回
路基板であって、前記貫通孔の内壁面と前記金属柱の外
壁面との間に長さが30μm乃至200μmの空間を設
けたことを特徴とするセラミック回路基板。
A metal circuit board made of copper or aluminum is attached to both sides of a ceramic substrate having a through hole so as to cover said through hole, and a metal column made of copper or aluminum is arranged in said through hole. A ceramic circuit board in which metal circuit boards on both sides of a ceramic substrate are connected by metal pillars, wherein a space having a length of 30 μm to 200 μm is provided between an inner wall surface of the through hole and an outer wall surface of the metal pillar. Characteristic ceramic circuit board.
JP2001045060A 2001-02-21 2001-02-21 Ceramic circuit board Expired - Fee Related JP4646417B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001045060A JP4646417B2 (en) 2001-02-21 2001-02-21 Ceramic circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001045060A JP4646417B2 (en) 2001-02-21 2001-02-21 Ceramic circuit board

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JP2002246717A true JP2002246717A (en) 2002-08-30
JP4646417B2 JP4646417B2 (en) 2011-03-09

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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012067177A1 (en) * 2010-11-17 2014-05-12 株式会社フジクラ Wiring board and manufacturing method thereof
JP2015170804A (en) * 2014-03-10 2015-09-28 三菱マテリアル株式会社 Power module board and manufacturing method thereof
JP2017059831A (en) * 2015-09-19 2017-03-23 日本特殊陶業株式会社 Wiring board and manufacturing method of the same
JP2018006463A (en) * 2016-06-29 2018-01-11 京セラ株式会社 Substrate for mounting semiconductor device and semiconductor device
CN115802596A (en) * 2023-02-13 2023-03-14 四川斯艾普电子科技有限公司 Thick-film ceramic circuit board and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102094566B1 (en) 2012-08-31 2020-03-27 미쓰비시 마테리알 가부시키가이샤 Power module substrate and power module

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JPS62247555A (en) * 1986-04-18 1987-10-28 Ibiden Co Ltd Pin grid array package substrate
JPH06120634A (en) * 1992-10-01 1994-04-28 Mitsubishi Materials Corp Through hole structure for ceramic board and production thereof
JPH11340600A (en) * 1998-05-22 1999-12-10 Toshiba Corp Ceramic circuit board

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62247555A (en) * 1986-04-18 1987-10-28 Ibiden Co Ltd Pin grid array package substrate
JPH06120634A (en) * 1992-10-01 1994-04-28 Mitsubishi Materials Corp Through hole structure for ceramic board and production thereof
JPH11340600A (en) * 1998-05-22 1999-12-10 Toshiba Corp Ceramic circuit board

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012067177A1 (en) * 2010-11-17 2014-05-12 株式会社フジクラ Wiring board and manufacturing method thereof
JP2015170804A (en) * 2014-03-10 2015-09-28 三菱マテリアル株式会社 Power module board and manufacturing method thereof
JP2017059831A (en) * 2015-09-19 2017-03-23 日本特殊陶業株式会社 Wiring board and manufacturing method of the same
JP2018006463A (en) * 2016-06-29 2018-01-11 京セラ株式会社 Substrate for mounting semiconductor device and semiconductor device
CN115802596A (en) * 2023-02-13 2023-03-14 四川斯艾普电子科技有限公司 Thick-film ceramic circuit board and manufacturing method thereof

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