JP2003283083A - Ceramic circuit board - Google Patents

Ceramic circuit board

Info

Publication number
JP2003283083A
JP2003283083A JP2002086811A JP2002086811A JP2003283083A JP 2003283083 A JP2003283083 A JP 2003283083A JP 2002086811 A JP2002086811 A JP 2002086811A JP 2002086811 A JP2002086811 A JP 2002086811A JP 2003283083 A JP2003283083 A JP 2003283083A
Authority
JP
Japan
Prior art keywords
metal
circuit board
ceramic
ceramic substrate
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002086811A
Other languages
Japanese (ja)
Inventor
Takeshi Furukuwa
健 古桑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2002086811A priority Critical patent/JP2003283083A/en
Publication of JP2003283083A publication Critical patent/JP2003283083A/en
Pending legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that a large amount of heat is generated by resistance heat generation in brazing filler metal filled in a penetrating hole of a ceramic substrate which metal connects metal circuit plates, and malfunction is generated in electronic components mounted on the metal circuit plates by the heat. <P>SOLUTION: In this ceramic circuit board, metal circuit plates 3 are fixed on both surfaces of the ceramic substrate 1 having the penetrating hole in such a manner that the hole is closed. A metal post 4 wherein content of copper is 50-80 wt.% and content of copper oxide is 20-50 wt.% is arranged in the hole. The metal circuit plates 3 on both the surfaces of the ceramic substrate 1 are connected by using the metal post 4. Resistivity of the metal post 4 is small and resistance heat generation does not occur, so that electronic components can operate stably for a long term. Stress caused by difference of thermal expansion coefficient between the ceramic substrate 1 and the metal post 4 is hard to be generated, so that crack, fracture, etc., are not generated in the ceramic substrate 1. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、セラミック基板の
両面に金属回路板を取着してこれら金属回路板をセラミ
ック基板の貫通孔内に配置した金属柱で接続したセラミ
ック回路基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board in which metal circuit boards are attached to both surfaces of a ceramic board and these metal circuit boards are connected by metal columns arranged in through holes of the ceramic board. .

【0002】[0002]

【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に活性金属ロウ材等を介して銅等から成る金属
回路板を直接接合させたセラミック回路基板が用いられ
ている。
2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a ceramic circuit board in which a metal circuit board made of copper or the like is directly bonded onto a ceramic board via an active metal brazing material or the like has been proposed. It is used.

【0003】また、これらのセラミック回路基板は、金
属回路板の実装密度を高めるためにセラミック基板の上
下両面に金属回路板を接合させておき、これら上下両面
の金属回路板間をセラミック基板に設けた貫通孔内に充
填されているロウ材で電気的に接続することが行なわれ
ている。
Further, in these ceramic circuit boards, metal circuit boards are bonded to the upper and lower surfaces of the ceramic board in order to increase the mounting density of the metal circuit boards, and the space between the upper and lower metal circuit boards is provided on the ceramic board. The brazing material filled in the through holes is used for electrical connection.

【0004】かかるセラミック回路基板は、具体的には
以下の方法によって製作される。
Specifically, such a ceramic circuit board is manufactured by the following method.

【0005】まず、酸化アルミニウム(Al23)質焼
結体・ムライト(3Al23−2SiO2)質焼結体・
炭化珪素(SiC)質焼結体・窒化アルミニウム(Al
N)質焼結体・窒化珪素(Si34)質焼結体等の電気
絶縁性のセラミックス材料から成り、厚み方向に貫通す
る貫通孔を設けたセラミック基板を準備し、次にセラミ
ック基板の貫通孔内に、銀ロウ粉末(銀と銅の合金粉
末)に有機溶剤・溶媒を添加混合して得たロウ材ペース
トを充填するとともに、セラミック基板の上下両面の所
定パターンに印刷塗布する。
First, an aluminum oxide (Al 2 O 3 ) -based sintered body and a mullite (3Al 2 O 3 -2SiO 2 ) -based sintered body
Silicon Carbide (SiC) Sintered Body / Aluminum Nitride (Al
N) A ceramic substrate made of an electrically insulating ceramic material such as a sintered body of silicon or silicon nitride (Si 3 N 4 ) and having a through hole penetrating in the thickness direction is prepared. The through hole is filled with a brazing material paste obtained by adding and mixing an organic solvent / solvent to a silver brazing powder (alloy powder of silver and copper), and is printed and applied in a predetermined pattern on the upper and lower surfaces of the ceramic substrate.

【0006】次に、セラミック基板上にロウ材ペースト
を間に挟んで銅等から成る金属回路板を載置する。
Next, a metal circuit board made of copper or the like is placed on the ceramic substrate with a brazing paste interposed therebetween.

【0007】そして最後に、セラミック基板の貫通孔内
に充填されているロウ材ペーストと、セラミック基板と
金属回路板との間に配されているロウ材ペーストとを非
酸化性雰囲気中にて約900℃の温度に加熱してロウ材を
溶融させ、このロウ材でセラミック基板と金属回路板と
を接合することによって製作される。
Finally, the brazing material paste filled in the through holes of the ceramic substrate and the brazing material paste arranged between the ceramic substrate and the metal circuit board are exposed to each other in a non-oxidizing atmosphere. It is manufactured by heating to a temperature of 900 ° C. to melt the brazing material and joining the ceramic substrate and the metal circuit board with the brazing material.

【0008】このように製作されたセラミック回路基板
は、半導体素子等の電子部品を半田等の接着剤を介して
実装した後、外部入出力用の樹脂ケースに組み立てら
れ、半導体モジュールとして使用される。
The ceramic circuit board thus manufactured is used as a semiconductor module by mounting electronic components such as semiconductor elements via an adhesive such as solder and then assembling it in a resin case for external input / output. .

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記の
ような従来のセラミック回路基板は、セラミック基板の
上下両面に接合されている金属回路板同士を接続する貫
通孔内に充填されているロウ材が、ロウ材ペーストを加
熱溶融させるときにロウ材ペースト中に存在する空気が
溶融したロウ材中に多量に抱き込まれて多孔質となり、
その導通抵抗が比抵抗で7〜10μΩ・cmと高いものと
なっていた。
However, in the conventional ceramic circuit board as described above, the brazing filler metal filled in the through holes connecting the metal circuit boards joined to the upper and lower surfaces of the ceramic board is used. , When the brazing paste is heated and melted, the air present in the brazing paste is entrapped in the molten brazing material in a large amount and becomes porous,
The conduction resistance was as high as 7 to 10 μΩ · cm in terms of specific resistance.

【0010】このため、金属回路板および貫通孔内のロ
ウ材に10Aを超える大電流が流れると、貫通孔内に充填
されたロウ材が抵抗発熱し、その熱が金属回路板上に半
田等の接着材を介して接着固定される半導体素子等の電
子部品に作用し、電子部品を高温にして安定に作動させ
ることができないという問題点を有していた。
Therefore, when a large current exceeding 10 A flows through the brazing material in the metal circuit board and the through hole, the brazing material filled in the through hole undergoes resistance heat generation, and the heat is soldered or the like on the metal circuit board. There is a problem that it acts on an electronic component such as a semiconductor element that is adhered and fixed via the adhesive material of (3), and the electronic component cannot be stably operated at a high temperature.

【0011】本発明は上記問題点に鑑み完成されたもの
で、その目的は、金属回路板同士を接続する導体におけ
る抵抗発熱による多量の熱の発生を有効に防止し、金属
回路板に実装される半導体素子等の電子部品を常に適温
として、正常かつ安定に作動させることができるセラミ
ック回路基板を提供することにある。
The present invention has been completed in view of the above problems, and an object thereof is to effectively prevent generation of a large amount of heat due to resistance heat generation in a conductor connecting metal circuit boards to each other and to mount the metal circuit boards on the metal circuit board. It is an object of the present invention to provide a ceramic circuit board that can always and normally operate electronic components such as semiconductor elements at an appropriate temperature.

【0012】[0012]

【課題を解決するための手段】本発明のセラミック回路
基板は、貫通孔を有するセラミック基板の両面に前記貫
通孔を塞ぐように金属回路板を取着させるとともに前記
貫通孔内に銅の含有量が50〜80質量%で酸化銅の含有量
が20〜50質量%である金属柱を配置し、この金属柱で前
記セラミック基板の両面の前記金属回路板を接続したこ
とを特徴とするものである。
In the ceramic circuit board of the present invention, a metal circuit board is attached to both sides of a ceramic substrate having a through hole so as to close the through hole, and the content of copper in the through hole. A metal column having a content of copper oxide of 50 to 80% by mass and a content of copper oxide of 20 to 50% by mass is arranged, and the metal circuit boards on both sides of the ceramic substrate are connected by this metal column. is there.

【0013】また本発明のセラミック回路基板は、上記
構成において、前記金属柱の比抵抗が2.7〜5μΩ・c
mであることを特徴とするものである。
In the ceramic circuit board of the present invention having the above-mentioned structure, the metal column has a specific resistance of 2.7 to 5 μΩ · c.
It is characterized by being m.

【0014】さらに本発明のセラミック回路基板は、上
記構成において、前記金属柱の熱膨張係数が12×10-6
℃以下であることを特徴とするものである。
Further, in the ceramic circuit board of the present invention having the above-mentioned structure, the coefficient of thermal expansion of the metal column is 12 × 10 −6 /
It is characterized in that it is below ℃.

【0015】本発明のセラミック回路基板によれば、セ
ラミック基板の両面に取着されている金属回路板を、セ
ラミック基板の貫通孔内に配置されている銅の含有量が
50〜80質量%で酸化銅の含有量が20〜50質量%である金
属柱を介して接続したことから、金属回路板および金属
柱に10Aを超える大電流が流れても金属柱の比抵抗が例
えば2.7〜5μΩ・cmと低いため抵抗発熱がほとんど
なく、多量の熱が発生することがない。その結果、金属
回路板上に半田等の接着材を用いて接着固定される半導
体素子等の電子部品は常に適温となり、長期間にわたっ
て正常かつ安定に作動させることが可能となる。
According to the ceramic circuit board of the present invention, the metal circuit boards attached to both sides of the ceramic board have the same copper content as the through holes of the ceramic board.
Since the connection was made via a metal column having a content of copper oxide of 50 to 80% by mass and a content of copper oxide of 20 to 50% by mass, even if a large current exceeding 10 A flows through the metal circuit board and the metal column, the specific resistance of the metal column However, since it is as low as 2.7 to 5 μΩ · cm, there is almost no resistance heat generation and a large amount of heat is not generated. As a result, an electronic component such as a semiconductor element, which is bonded and fixed on a metal circuit board by using an adhesive such as solder, always has an appropriate temperature, and can operate normally and stably for a long period of time.

【0016】また、本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔内に配置されている金属柱
の熱膨張係数を12×10-6/℃以下としたときには、セラ
ミック基板と金属柱との間に熱膨張係数の相違に起因す
る応力が発生しにくいものとなる。その結果、セラミッ
ク基板にクラックや割れ等を生じることがなく、信頼性
の高いセラミック回路基板とすることができる。
Further, according to the ceramic circuit board of the present invention, when the coefficient of thermal expansion of the metal column arranged in the through hole of the ceramic substrate is 12 × 10 −6 / ° C. or less, the ceramic substrate and the metal column are The stress due to the difference in the coefficient of thermal expansion is less likely to occur between and. As a result, a highly reliable ceramic circuit board can be obtained without causing cracks or breaks in the ceramic board.

【0017】[0017]

【発明の実施の形態】次に、本発明のセラミック回路基
板を添付図面に基づき詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a ceramic circuit board of the present invention will be described in detail with reference to the accompanying drawings.

【0018】図1は本発明のセラミック回路基板の実施
の形態の一例を示す断面図であり、1はセラミック基
板、2は活性金属ロウ材、3は金属回路板、4は金属柱
である。
FIG. 1 is a sectional view showing an example of an embodiment of a ceramic circuit board of the present invention. 1 is a ceramic board, 2 is an active metal brazing material, 3 is a metal circuit board, and 4 is a metal column.

【0019】セラミック基板1の上下両面に所定パター
ンの金属回路板3が活性金属ロウ材2を介して取着され
ており、同時にセラミック基板1に設けた厚み方向に貫
通する貫通孔内に銅と酸化銅とから成る金属柱4が配置
されている。
Metal circuit boards 3 having a predetermined pattern are attached to both upper and lower surfaces of the ceramic substrate 1 via an active metal brazing material 2, and at the same time, copper is provided in a through hole formed in the ceramic substrate 1 and penetrating in the thickness direction. A metal column 4 made of copper oxide is arranged.

【0020】セラミック基板1に設けた貫通孔内に配置
されている銅と酸化銅とから成る金属柱4は、その両端
がそれぞれ上下の金属回路板3に接続されており、これ
によってセラミック基板1の上下両面に取着されている
金属回路板3は金属柱4を介して接続されることとな
る。
The metal columns 4 made of copper and copper oxide, which are arranged in the through holes provided in the ceramic substrate 1, are connected at their both ends to the upper and lower metal circuit boards 3, respectively. The metal circuit boards 3 attached to the upper and lower surfaces of the above are connected via the metal columns 4.

【0021】セラミック基板1は通常は略四角形状であ
り、金属回路板3を支持する支持部材として機能し、酸
化アルミニウム質焼結体・ムライト質焼結体・炭化珪素
質焼結体・窒化アルミニウム質焼結体・窒化珪素質焼結
体等の電気絶縁材料で形成されている。
The ceramic substrate 1 usually has a substantially quadrangular shape and functions as a supporting member for supporting the metal circuit board 3, and is made of an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, or an aluminum nitride. It is made of an electrically insulating material such as a porous sintered body or a silicon nitride sintered body.

【0022】セラミック基板1は、例えば酸化アルミニ
ウム質焼結体で形成されている場合であれば、酸化アル
ミニウム・酸化珪素・酸化マグネシウム・酸化カルシウ
ム等の原料粉末に適当な有機バインダ・可塑剤・溶剤を
添加混合して泥漿状となすとともに、その泥漿物に従来
周知のドクターブレード法やカレンダーロール法を採用
することによってセラミックグリーンシート(セラミッ
ク生シート)を形成し、しかる後、このセラミックグリ
ーンシートに適当な打ち抜き加工を施すことによって貫
通孔を形成するとともに、これを複数枚積層し、約1600
℃の高温で焼成することによって製作される。
If the ceramic substrate 1 is formed of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, and a solvent suitable for the raw material powder of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. Is added and mixed to form a sludge, and a ceramic green sheet (ceramic green sheet) is formed by applying the well-known doctor blade method or calender roll method to the sludge, and then the ceramic green sheet is formed. Through-holes are formed by appropriate punching, and multiple through-holes are stacked to create a through-hole.
It is manufactured by firing at a high temperature of ℃.

【0023】また、セラミック基板1は、その上下両面
にセラミック基板1に設けた貫通孔を塞ぐように金属回
路板3が活性金属ロウ材2を介して取着されている。
On the upper and lower surfaces of the ceramic substrate 1, metal circuit boards 3 are attached via an active metal brazing material 2 so as to close the through holes provided in the ceramic substrate 1.

【0024】なお、セラミック基板1はその厚みを0.2
〜1mmとすることが、金属回路板3を接合したときの
セラミック基板1の割れ抑制や、半導体素子(図示せ
ず)から発生する熱の伝達性の点で好ましい。厚みが0.
2mm未満では、セラミック基板1に金属回路板3を接
合したときに発生する応力により、セラミック基板1に
割れ等が発生しやすくなる傾向がある。他方、1mmを
超えると、搭載される半導体素子から発生する熱を良好
に放熱することが困難となる傾向がある。
The ceramic substrate 1 has a thickness of 0.2.
It is preferable that the thickness is ˜1 mm in terms of suppressing cracking of the ceramic substrate 1 when the metal circuit board 3 is joined and heat transferability of heat generated from a semiconductor element (not shown). Thickness is 0.
If it is less than 2 mm, the ceramic substrate 1 tends to be cracked due to the stress generated when the metal circuit board 3 is bonded to the ceramic substrate 1. On the other hand, if the thickness exceeds 1 mm, it tends to be difficult to satisfactorily dissipate heat generated from the mounted semiconductor element.

【0025】金属回路板3は銅やアルミニウム等の金属
材料から成り、また、セラミック基板1の上下両面に例
えば活性金属ロウ材2を介して以下のようにして接合さ
れる。
The metal circuit board 3 is made of a metal material such as copper or aluminum, and is joined to the upper and lower surfaces of the ceramic substrate 1 through the active metal brazing material 2 as follows.

【0026】例えば、銀−銅合金粉末等から成る銀ロウ
粉末や、アルミニウム−シリコン合金粉末等から成るア
ルミニウムロウ粉末に、チタン・ジルコニウム・ハフニ
ウム等の活性金属やその水素化物の少なくとも1種から
成る活性金属粉末を2〜5質量%添加した活性金属ロウ
材2に、適当な有機溶剤・溶媒を添加混合して得た活性
金属ロウ材ペーストを、セラミック基板1の上下面に従
来周知のスクリーン印刷技術を用いて金属回路板3に対
応した所定パターンに印刷する。
For example, silver brazing powder made of silver-copper alloy powder or aluminum brazing powder made of aluminum-silicon alloy powder is added to at least one active metal such as titanium, zirconium or hafnium and its hydride. An active metal brazing material 2 obtained by adding 2 to 5% by mass of the active metal powder is mixed with an appropriate organic solvent / solvent to obtain an active metal brazing material paste. A predetermined pattern corresponding to the metal circuit board 3 is printed by using a technique.

【0027】その後、金属回路板3をこのロウ材パター
ン上に載置し、これを真空中、または中性雰囲気中もし
くは還元雰囲気中で、所定温度(銀ロウ材の場合は約90
0℃、アルミニウムロウ材の場合は約600℃)で加熱処理
し、活性金属ロウ材2を溶融させてセラミック基板1の
上下両面と金属回路板3とを接合させる。これにより、
セラミック基板1の上下両面に金属回路板3が接合され
ることとなる。
Thereafter, the metal circuit board 3 is placed on this brazing material pattern, and this is placed in a vacuum, or in a neutral atmosphere or a reducing atmosphere at a predetermined temperature (about 90 degrees for a silver brazing material).
At 0 ° C., about 600 ° C. for an aluminum brazing material), the active metal brazing material 2 is melted to bond the upper and lower surfaces of the ceramic substrate 1 to the metal circuit board 3. This allows
The metal circuit boards 3 are bonded to the upper and lower surfaces of the ceramic substrate 1.

【0028】銅やアルミニウム等から成る金属回路板3
は、銅やアルミニウム等のインゴット(塊)に圧延加工
法・打ち抜き加工法・切削加工等の従来周知の金属加工
法を施すことによって、例えば、厚さが0.5mmで、所
望の回路配線パターン形状に製作される。
Metal circuit board 3 made of copper or aluminum
Is a 0.5 mm thick, desired circuit wiring pattern shape, for example, by applying a well-known metal processing method such as rolling, punching, or cutting to an ingot (lump) of copper or aluminum. Will be produced.

【0029】金属回路板3の厚さは、大電流信号を伝達
するための電気抵抗を低くする点や、セラミック基板1
と接合したときのセラミック基板1の割れを防止する点
で0.1〜1mmが好ましい。0.1mm未満では、電気抵抗
が大きくなるため大電流信号が流れにくくなる傾向があ
る。他方、1mmを超えると、セラミック基板1と金属
回路板3とを接合したときに発生する応力により、セラ
ミック基板1に割れ等が発生しやすくなる傾向がある。
The thickness of the metal circuit board 3 lowers the electric resistance for transmitting a large current signal, and the ceramic substrate 1
It is preferably 0.1 to 1 mm in order to prevent cracking of the ceramic substrate 1 when joined to. If it is less than 0.1 mm, the electric resistance tends to be large, and it tends to be difficult for a large current signal to flow. On the other hand, if it exceeds 1 mm, the ceramic substrate 1 tends to be cracked or the like due to the stress generated when the ceramic substrate 1 and the metal circuit board 3 are bonded.

【0030】金属柱4は、セラミック基板1の貫通孔の
内部にこの貫通孔を充填するように配置されており、そ
の上下の端部が金属回路板3と活性金属ロウ材2を介し
て接合されるように配置されている。
The metal columns 4 are arranged so as to fill the through holes in the ceramic substrate 1, and the upper and lower ends thereof are joined to the metal circuit board 3 via the active metal brazing material 2. It is arranged to be done.

【0031】金属柱4は銅と酸化銅との合金材料から成
り、セラミック基板1の貫通孔の内部に例えば、活性金
属ロウ材2を介して以下のようにして接合される。
The metal column 4 is made of an alloy material of copper and copper oxide, and is joined to the inside of the through hole of the ceramic substrate 1 via the active metal brazing material 2 as follows.

【0032】金属回路板3を接合するのに用いたものと
同様に作製した活性金属ロウ材ペーストを、スクリーン
印刷法やディスペンス法によってセラミック基板1の貫
通孔の内部に塗布する。
An active metal brazing material paste prepared in the same manner as that used for bonding the metal circuit board 3 is applied to the inside of the through hole of the ceramic substrate 1 by a screen printing method or a dispensing method.

【0033】その後、金属柱4を貫通孔に挿入配置し、
これを真空中、または中性雰囲気中もしくは還元雰囲気
中で、所定温度(銀ロウ材の場合は約900℃、アルミニ
ウムロウ材の場合は約600℃)で加熱処理し、活性金属
ロウ材2を溶融させてセラミック基板1の貫通孔に金属
柱4を接合する。
After that, the metal column 4 is inserted and arranged in the through hole,
This is heat-treated at a predetermined temperature (about 900 ° C. for silver brazing material and about 600 ° C. for aluminum brazing material) in a vacuum or in a neutral atmosphere or a reducing atmosphere, and the active metal brazing material 2 is treated. The metal pillars 4 are fused and joined to the through holes of the ceramic substrate 1.

【0034】この金属柱4の加熱処理および金属回路板
3の加熱処理は同時に行なってもよい。
The heat treatment of the metal columns 4 and the heat treatment of the metal circuit board 3 may be performed simultaneously.

【0035】銅と酸化銅との合金材料から成る金属柱4
は、例えば、銅粉末と酸化銅粉末とを所定の比率で調合
した後、ボールミルで例えば約24時間混錬した後、10気
圧程度で800〜850℃の温度で約3時間の加圧焼成を行な
うことによって銅と酸化銅との合金インゴット(塊)を
製作し、これに圧延加工法・打ち抜き加工法・切削加工
等の従来周知の金属加工法を施すことによって、例え
ば、直径が0.5mmの円柱形状に製作される。
Metal column 4 made of an alloy material of copper and copper oxide
For example, after mixing copper powder and copper oxide powder in a predetermined ratio, kneading with a ball mill for, for example, about 24 hours, and then pressure firing at a temperature of 800 to 850 ° C. at about 10 atm for about 3 hours. By making an alloy ingot (lump) of copper and copper oxide by carrying out, and by subjecting it to a conventionally known metal working method such as rolling, punching, and cutting, for example, a diameter of 0.5 mm It is manufactured in a cylindrical shape.

【0036】金属柱4は、銅の含有量が50〜80質量%で
酸化銅の含有量が50〜20質量%であるものとすることが
重要であり、これにより大電流が流れたときの抵抗発熱
の抑制や、セラミック基板1との熱膨張係数の相違によ
る割れやクラックの抑制の点で好ましいものとなる。
It is important that the metal column 4 has a copper content of 50 to 80% by mass and a copper oxide content of 50 to 20% by mass. This is preferable in terms of suppressing resistance heating and suppressing cracks and cracks due to the difference in thermal expansion coefficient from the ceramic substrate 1.

【0037】金属柱4は、銅の含有量が50質量%未満で
は、比抵抗が5μΩ・cmより大きくなりやすく、大電
流が流れたときに抵抗発熱しやすくなる傾向がある。他
方、銅の含有量が80質量%を超えると、熱膨張係数が12
×10-6/℃より大きくなりやすく、セラミック基板1と
の熱膨張係数の相違によりセラミック基板1に割れ等が
発生しやすくなる傾向がある。
When the copper content is less than 50% by mass, the metal pillar 4 tends to have a specific resistance of more than 5 μΩ · cm and tends to easily generate resistance heat when a large current flows. On the other hand, when the content of copper exceeds 80% by mass, the coefficient of thermal expansion is 12
The temperature tends to be higher than × 10 −6 / ° C., and the ceramic substrate 1 tends to be cracked due to the difference in thermal expansion coefficient from the ceramic substrate 1.

【0038】[0038]

【実施例】以下、実施例を挙げて本発明のセラミック回
路基板を詳細に説明する。
EXAMPLES The ceramic circuit board of the present invention will be described in detail below with reference to examples.

【0039】まず、セラミック基板として、厚みが0.63
5mmで大きさが75mm□の酸化アルミニウム基板を準
備した。この酸化アルミニウム基板には、あらかじめ直
径0.4mmの貫通孔を20個加工しておいた。
First, as a ceramic substrate, the thickness is 0.63.
An aluminum oxide substrate having a size of 5 mm and a size of 75 mm □ was prepared. 20 through holes having a diameter of 0.4 mm were processed in advance on this aluminum oxide substrate.

【0040】また、金属柱として表1に示す組成の銅と
酸化銅との合金から成る、直径0.3mmで長さ0.635mm
の円柱形状の金属柱を準備した。このときの各組成別の
金属柱の比抵抗および熱膨張係数を表1に示す。
The metal column is made of an alloy of copper and copper oxide having the composition shown in Table 1 and has a diameter of 0.3 mm and a length of 0.635 mm.
A cylindrical metal column of No. 1 was prepared. Table 1 shows the specific resistance and the coefficient of thermal expansion of the metal columns for each composition at this time.

【0041】[0041]

【表1】 [Table 1]

【0042】次に、銀−銅合金粉末97質量%と水素化チ
タン粉末3質量%と有機バインダ・溶剤とを混練して活
性金属ロウ材ペーストを調製した。その後、酸化アルミ
ニウム基板の上下両面と貫通孔とにこの活性金属ロウ材
ペーストを塗布乾燥した。
Next, 97 mass% of silver-copper alloy powder, 3 mass% of titanium hydride powder, an organic binder and a solvent were kneaded to prepare an active metal brazing material paste. Then, this active metal brazing material paste was applied and dried on both upper and lower surfaces of the aluminum oxide substrate and the through holes.

【0043】この活性金属ロウ材ペーストを塗布した酸
化アルミニウム基板の貫通孔に、各金属柱を挿入配置し
て、同時に上下両面に厚み0.3mmの無酸素銅板を配置
して、雰囲気10-3Paの真空中にて温度850℃で1時間
の熱処理をすることにより、酸化アルミニウム基板と無
酸素銅板および金属柱とを活性金属ロウ材によって接合
した。
Each metal column was inserted and arranged in the through hole of the aluminum oxide substrate coated with this active metal brazing material paste, and at the same time, oxygen-free copper plates with a thickness of 0.3 mm were arranged on both upper and lower surfaces, and the atmosphere was 10 -3 Pa. The aluminum oxide substrate was bonded to the oxygen-free copper plate and the metal columns by the active metal brazing material by performing heat treatment at a temperature of 850 ° C. for 1 hour in vacuum.

【0044】このように作製した各セラミック回路基板
について、金属柱1本当たり5Aおよび10Aの電流を直
流電源によって流し、このセラミック回路基板の表面の
温度変化を表面温度計にて測定した。このとき、セラミ
ック回路基板を断熱材で覆い、発生した熱が放散しない
ようにした。そして、電流を流して5分後の温度上昇を
測定して10℃未満の温度変化を○、10℃以上の温度変化
を×で評価した。その結果を表2に示す。
For each ceramic circuit board thus produced, a current of 5 A and 10 A per metal column was passed by a DC power source, and the temperature change on the surface of this ceramic circuit board was measured by a surface thermometer. At this time, the ceramic circuit board was covered with a heat insulating material to prevent the generated heat from being dissipated. Then, the temperature rise was measured after 5 minutes by passing an electric current, and the temperature change of less than 10 ° C was evaluated as ◯, and the temperature change of 10 ° C or more was evaluated as x. The results are shown in Table 2.

【0045】また、−40℃(30分)〜+125℃(30分)
の温度サイクル試験を3000サイクルまで実施し、試験後
にフッ硝酸の化学エッチングによって上下面の無酸素銅
板および活性金属ロウ材を剥離して、貫通孔周囲のクラ
ックの発生の有無を金属顕微鏡にて観察した。その結
果、クラックの発生したサイクル数を表2に示す。
-40 ° C (30 minutes) to + 125 ° C (30 minutes)
The temperature cycle test of up to 3000 cycles was performed, and after the test, the oxygen-free copper plate and the active metal brazing material on the upper and lower surfaces were peeled off by chemical etching with hydrofluoric acid, and the presence of cracks around the through holes was observed with a metallurgical microscope. did. As a result, the number of cycles in which cracks have occurred is shown in Table 2.

【0046】[0046]

【表2】 [Table 2]

【0047】表1および表2に示す結果より、金属柱の
銅の含有量が50質量%未満の比較例1〜4では比抵抗が
5μΩcmを超えて、この金属柱に10Aを超える大電流
が流れると10℃以上の温度上昇が起こることが分かる。
From the results shown in Table 1 and Table 2, in Comparative Examples 1 to 4 in which the content of copper in the metal column is less than 50% by mass, the specific resistance exceeds 5 μΩcm, and a large current exceeding 10 A is applied to this metal column. It can be seen that a temperature rise of 10 ° C or more occurs when flowing.

【0048】また、金属柱の銅の含有量が80質量%を超
える比較例5・6では、熱膨張係数が12×10-6/℃を超
えるものとなり、セラミック基板の貫通孔の周囲に熱膨
張係数の相違によるクラックが2000サイクル以下で発生
していた。
Further, in Comparative Examples 5 and 6 in which the content of copper in the metal columns exceeds 80 mass%, the coefficient of thermal expansion exceeds 12 × 10 −6 / ° C., and heat is generated around the through holes of the ceramic substrate. Cracks due to the difference in expansion coefficient occurred in 2000 cycles or less.

【0049】これに対し、本発明の実施例である実施例
1〜実施例4では、比抵抗が2.7〜5μΩ・cmと低
く、また熱膨張係数も8.5〜11.9×10-6/℃であり、12
×10-6/℃以下で酸化アルミニウム基板の熱膨張係数と
の差が小さいものとなった。また、金属柱に10Aの電流
を流して5分後の温度上昇も0.3〜9.8℃と10℃未満であ
り、3000サイクルの温度サイクル試験後も貫通孔周囲に
クラックの発生が見られなかった。
On the other hand, in Examples 1 to 4 which are examples of the present invention, the specific resistance is low at 2.7 to 5 μΩ · cm, and the thermal expansion coefficient is 8.5 to 11.9 × 10 −6 / ° C. , 12
At a temperature of × 10 -6 / ° C or less, the difference from the coefficient of thermal expansion of the aluminum oxide substrate was small. In addition, the temperature rise after 5 minutes after passing a current of 10 A through the metal column was 0.3 to 9.8 ° C, which was less than 10 ° C, and no cracks were found around the through holes even after the temperature cycle test of 3000 cycles.

【0050】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。
It should be noted that the present invention is not limited to the examples of the above-described embodiments, and various modifications can be made without departing from the scope of the present invention.

【0051】例えば、上述の実施の形態の例ではセラミ
ック基板に活性金属ロウ材を介して直接に金属回路板を
ロウ付けしてセラミック回路基板を形成したが、これを
セラミック基板の表面に予めタングステンまたはモリブ
デン等のメタライズ金属層を被着させておき、このメタ
ライズ金属層に金属回路板をロウ材を介して接合させて
セラミック回路基板を形成してもよい。
For example, in the example of the above-mentioned embodiment, the metal circuit board is directly brazed to the ceramic substrate through the active metal brazing material to form the ceramic circuit board. Alternatively, a metallized metal layer such as molybdenum may be deposited, and a metal circuit board may be bonded to the metallized metal layer via a brazing material to form a ceramic circuit board.

【0052】[0052]

【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板の両面に取着されている金属回路板を、
セラミック基板の貫通孔内に配置されている銅の含有量
が50〜80質量%で酸化銅の含有量が20〜50質量%である
金属柱を介して接続したことから、金属回路板および金
属柱に10Aを超える大電流が流れても金属柱の比抵抗が
例えば2.7〜5μΩ・cmと低いため抵抗発熱がほとん
どなく、多量の熱が発生することがない。その結果、金
属回路板上に半田等の接着材を用いて接着固定される半
導体素子等の電子部品は常に適温となり、長期間にわた
って正常、かつ安定に作動させることが可能となる。
According to the ceramic circuit board of the present invention,
The metal circuit boards attached to both sides of the ceramic substrate,
The metal circuit board and the metal are arranged through the metal columns having a copper content of 50 to 80 mass% and a copper oxide content of 20 to 50 mass% arranged in the through holes of the ceramic substrate. Even if a large current of more than 10 A flows through the pillar, the resistance of the metal pillar is as low as 2.7 to 5 μΩ · cm, so that resistance heat is hardly generated and a large amount of heat is not generated. As a result, an electronic component such as a semiconductor element, which is adhesively fixed to a metal circuit board by using an adhesive such as solder, always has an appropriate temperature, and can operate normally and stably for a long period of time.

【0053】また、本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔内に配置されている金属柱
の熱膨張係数を12×10-6/℃以下としたときには、セラ
ミック基板と金属柱との間に熱膨張係数の相違に起因す
る応力が発生しにくいものとなる。その結果、セラミッ
ク基板にクラックや割れ等を生じることがなく、信頼性
の高いセラミック回路基板とすることができる。
Further, according to the ceramic circuit board of the present invention, when the coefficient of thermal expansion of the metal column arranged in the through hole of the ceramic substrate is 12 × 10 −6 / ° C. or less, the ceramic substrate and the metal column are The stress due to the difference in the coefficient of thermal expansion is less likely to occur between and. As a result, a highly reliable ceramic circuit board can be obtained without causing cracks or breaks in the ceramic board.

【0054】以上により、本発明によれば、金属回路板
同士を接続する導体における抵抗発熱による多量の熱の
発生を有効に防止し、金属回路板に搭載される半導体素
子等の電子部品を常に適温として、正常かつ安定に作動
させることができるセラミック回路基板を提供すること
ができた。
As described above, according to the present invention, it is possible to effectively prevent the generation of a large amount of heat due to resistance heat generation in the conductor connecting the metal circuit boards, and to keep electronic components such as semiconductor elements mounted on the metal circuit boards at all times. It was possible to provide a ceramic circuit board that can be operated normally and stably at an appropriate temperature.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のセラミック回路基板の実施の形態の一
例を示す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment of a ceramic circuit board of the present invention.

【符号の説明】[Explanation of symbols]

1:セラミック基板 2:活性金属ロウ材 3:金属回路板 4:金属柱 1: Ceramic substrate 2: Active metal brazing material 3: Metal circuit board 4: Metal pillar

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 貫通孔を有するセラミック基板の両面に
前記貫通孔を塞ぐように金属回路板を取着させるととも
に前記貫通孔内に銅の含有量が50〜80質量%で酸化
銅の含有量が50〜20質量%である金属柱を配置し、
該金属柱で前記セラミック基板両面の前記金属回路板を
接続したことを特徴とするセラミック回路基板。
1. A ceramic substrate having a through hole, metal circuit boards are attached to both sides of the ceramic substrate so as to close the through hole, and the content of copper in the through hole is 50 to 80% by mass and the content of copper oxide. Arranging a metal column whose content is 50 to 20% by mass,
A ceramic circuit board, wherein the metal circuit boards on both sides of the ceramic board are connected by the metal columns.
【請求項2】 前記金属柱の比抵抗が2.7〜5μΩ・
cmであることを特徴とする請求項1記載のセラミック
回路基板。
2. The specific resistance of the metal column is 2.7 to 5 μΩ.
The ceramic circuit board according to claim 1, wherein the ceramic circuit board is in cm.
【請求項3】 前記金属柱の熱膨張係数が12×10-6
/℃以下であることを特徴とする請求項1記載のセラミ
ック回路基板。
3. The thermal expansion coefficient of the metal column is 12 × 10 −6
/ C or less, The ceramic circuit board according to claim 1 characterized by things.
JP2002086811A 2002-03-26 2002-03-26 Ceramic circuit board Pending JP2003283083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002086811A JP2003283083A (en) 2002-03-26 2002-03-26 Ceramic circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002086811A JP2003283083A (en) 2002-03-26 2002-03-26 Ceramic circuit board

Publications (1)

Publication Number Publication Date
JP2003283083A true JP2003283083A (en) 2003-10-03

Family

ID=29233281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002086811A Pending JP2003283083A (en) 2002-03-26 2002-03-26 Ceramic circuit board

Country Status (1)

Country Link
JP (1) JP2003283083A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1385363A1 (en) * 2001-04-06 2004-01-28 Suzuki Co., Ltd Printed circuit board and production method therefor, and laminated printed circuit board
JP2019197924A (en) * 2011-07-15 2019-11-14 ルミレッズ ホールディング ベーフェー Method for bonding semiconductor device to support substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1385363A1 (en) * 2001-04-06 2004-01-28 Suzuki Co., Ltd Printed circuit board and production method therefor, and laminated printed circuit board
EP1385363A4 (en) * 2001-04-06 2005-06-29 Mitsui Mining & Smelting Co Printed circuit board and production method therefor, and laminated printed circuit board
JP2019197924A (en) * 2011-07-15 2019-11-14 ルミレッズ ホールディング ベーフェー Method for bonding semiconductor device to support substrate
US11721788B2 (en) 2011-07-15 2023-08-08 Lumileds Llc Method of bonding a semiconductor device to a support substrate

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