JP2002237545A - Manufacturing for circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for reducing the cost and the resources, while even if there are no extra constituent factors and manufacturing a small and thin circuit device, by embedding a conductive path in an insulating resin requiring no usage of a support board. SOLUTION: A conductive foil is pressed with a metallic die having a formation part for a desired conductive path to form a desired conductive path 55A on the conductive foil. A circuit element 55 is mounted. After insulating resin 61 is mounted with the conductive foil as a support board, an joining part of the conductive foil is etched with the insulating resin 61 as the support board which is separated as a conductive path. Without having to adopt the support board, a circuit device having the conductive path 55A and the circuit element 56 supported by the insulating resin 61 is realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a circuit device, and more particularly to a method of manufacturing a thin circuit device.

[0002]

2. Description of the Related Art Conventionally, a circuit device set in an electronic device is employed in a cellular phone, a portable computer, and the like, and therefore, a reduction in size, thickness, and weight is required.

For example, a semiconductor device will be described as an example of a circuit device. As a general semiconductor device, there is a package type semiconductor device sealed with a conventional transfer mold. This semiconductor device 1 is, as shown in FIG.
It is mounted on the printed circuit board PS.

In the package type semiconductor device 1, the periphery of a semiconductor chip 2 is covered with a resin layer 3.
The lead terminal 4 for external connection is led out from the side part of FIG.

However, this package type semiconductor device 1 has
The lead terminals 4 were outside the resin layer 3, and the overall size was large, and the size, thickness and weight were not satisfied.

Therefore, various companies have competed to develop various structures in order to realize miniaturization, thinning, and weight reduction. Alternatively, a CSP having a size slightly larger than the chip size has been developed.

FIG. 11 shows a case where a glass epoxy substrate 5 is used as a support substrate, and the CS is slightly larger than the chip size.
It shows P6. Here, the glass epoxy substrate 5
It is assumed that the transistor chip T is mounted on the semiconductor device.

A first electrode 7, a second electrode 8, and a die pad 9 are formed on the surface of the glass epoxy substrate 5, and a first back electrode 10 and a second back electrode 11 are formed on the back surface.
Are formed. And, through the through hole TH,
The first electrode 7 and the first back electrode 10 are electrically connected, and the second electrode 8 and the second back electrode 11 are electrically connected. The bare transistor chip T is fixed to the die pad 9, and the emitter electrode of the transistor and the first electrode 7 are fixed.
Are connected via the thin metal wire 12, and the base electrode of the transistor and the second electrode 8 are connected via the thin metal wire 12. Further, a resin layer 13 is provided on the glass epoxy substrate 5 so as to cover the transistor chip T.

Although the CSP 6 employs the glass epoxy substrate 5, unlike the wafer scale CSP, the structure extending from the chip T to the back surface electrodes 10 and 11 for external connection is simple, and the CSP 6 can be manufactured at low cost. Have.

The CSP 6 is mounted on a printed circuit board PS as shown in FIG. In the printed circuit board PS,
The CSP is provided with electrodes and wiring constituting an electric circuit.
6. The package type semiconductor device 1, the chip resistor CR or the chip capacitor CC and the like are electrically connected and fixed.

The circuit constituted by the printed circuit board is mounted in various sets.

Next, a method of manufacturing the CSP will be described with reference to FIGS. In FIG. 13,
Reference is made to the flow diagram entitled Central Glass Epoxy / Flexible Substrate.

First, a glass epoxy substrate 5 is prepared as a substrate (supporting substrate), and C
The u foils 20 and 21 are pressed. (See FIG. 12A above.) Subsequently, the first electrode 7, the second electrode 8, the die pad 9,
The Cu foils 20 and 21 corresponding to the first back surface electrode 10 and the second back surface electrode 11 are coated with an etching resistant resist 22, and the Cu foils 20 and 21 are patterned. The patterning may be performed separately on the front and the back (see FIG. 12).
(See (B).) Subsequently, a hole for the through hole TH is formed in the glass epoxy substrate using a drill or a laser, and the hole is plated to form the through hole TH. The first electrode 7 and the first back electrode 1 are formed by the through hole TH.
0, the second electrode 8 and the second back electrode 10 are electrically connected. (Refer to FIG. 12 (C).) Although not shown in the drawing, the first electrode 7 and the second electrode 8 serving as the bonding posts are plated with Ni, and the die pads 9 serving as the die bonding posts are provided with Au.
Plating is performed, and the transistor chip T is die-bonded.

Finally, the emitter electrode of the transistor chip T and the first electrode 7, and the base electrode and the second electrode 8 of the transistor chip T are connected via a thin metal wire 12 and covered with a resin layer 13. (See FIG. 12 (D).) Then, if necessary, dicing is performed to separate individual electric elements. In FIG. 11, the glass epoxy substrate 5
Although only one transistor chip T is provided, a large number of transistor chips T are provided in a matrix. Therefore, they are finally separated by a dicing device.

By the above manufacturing method, a CSP type electric element using the support substrate 5 is completed. This manufacturing method
The same applies to the case where a flexible sheet is used as the support substrate.

On the other hand, a manufacturing method employing a ceramic substrate is shown in a flow chart on the left side of FIG. After preparing a ceramic substrate that is a support substrate, a through hole is formed, and then
The front and back electrodes are printed and sintered using conductive paste. After that, until the resin layer of the previous manufacturing method is coated, the manufacturing method is the same as that of FIG. There is a problem that can not be molded. For this reason, after sealing resin is potted and cured, it is polished to flatten the sealing resin, and finally separated individually using a dicing device.

[0017]

In FIG. 11, a transistor chip T, connecting means 7 to 12 and a resin layer 13 are shown.
Are necessary components for electrical connection to the outside and protection of the transistor. However, it is difficult to provide an electric circuit device that realizes reduction in size, thickness, and weight with only these components. Was.

Further, the glass epoxy substrate 5 serving as the support substrate is essentially unnecessary as described above. However, in the manufacturing method, the glass epoxy substrate 5 is used as a supporting substrate for bonding the electrodes, and the glass epoxy substrate 5 cannot be eliminated.

For this reason, the use of the glass epoxy substrate 5 raises the cost. Further, the thickness of the glass epoxy substrate 5 makes the circuit device thicker.
There was a limit to miniaturization, thinning, and weight reduction.

Further, in the case of a glass epoxy substrate or a ceramic substrate, a step of forming a through hole for connecting electrodes on both surfaces is indispensable, and there has been a problem that the manufacturing process becomes long.

FIG. 14 shows a pattern diagram formed on a glass epoxy substrate, a ceramic substrate, a metal substrate or the like. In this pattern, an IC circuit is generally formed, and the transistor chip 21, the IC chip 22,
A chip capacitor 23 and / or a chip resistor 24 are mounted. A bonding pad 26 integrated with the wiring 25 is formed around the transistor chip 21 and the IC chip 22, and the chips 21 and 22 are electrically connected to the bonding pad via a thin metal wire 28. The wiring 29 is formed integrally with the external lead pad 30. These wirings 25 and 29 extend while bending in the substrate, and are formed as thinnest as possible in the IC chip as required. Accordingly, the thin wiring has a very small area of adhesion to the substrate, and has a problem that the wiring is peeled off or warped. The bonding pad 26 includes a power bonding pad and a small-signal bonding pad. Particularly, the small-signal bonding pad has a small bonding area and causes film peeling.

Further, although the external lead is fixed to the external lead pad, there is a problem that the external lead pad is peeled off by an external force applied to the external lead.

[0023]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned many problems, and comprises a step of preparing a conductive foil and a step of pressing the conductive foil while leaving at least a region of the conductive foil to be a conductive path. Forming a plurality of the conductive paths in the conductive foil, electrically connecting and fixing a desired circuit element on the desired conductive path, and forming the circuit element, the connecting means, and the conductive element. Covering the path, molding with an insulating resin so as to fill the groove between the conductive paths, integrating the conductive path and the insulating resin, and leaving the conductive path from the back surface of the conductive foil. And removing other components.

Preferably, in the method of manufacturing a circuit device according to the present invention, in the step of pressing the conductive foil from both sides, the conductive foil is placed in a pair of molds provided with a plurality of conductive path forming portions. A plurality of the conductive paths can be formed integrally with the conductive foil by installing and pressing the conductive foil from both sides of the conductive foil.

The present invention also provides a step of preparing a conductive foil,
Pressing the conductive foil while leaving at least a region to be a conductive path of the conductive foil, forming a plurality of the conductive paths in the conductive foil; and electrically connecting a desired circuit element on the desired conductive path. Connecting and fixing, forming a connecting means for electrically connecting an electrode of the circuit element and the desired conductive path, covering the circuit element, the connecting means and the conductive path, Molding with an insulating resin so as to fill the groove between the conductive paths, integrating the conductive path with the insulating resin, and removing the other from the back surface of the conductive foil while leaving the conductive path And a step of cutting the insulating resin to separate it into individual circuit devices.

Preferably, in the method of manufacturing a circuit device according to the present invention, in the step of leaving the conductive path from the back surface of the conductive foil and removing the other, the conductive foil is cut from the back surface, or after the cut, By etching, the conductive paths can be separated and the desired circuit device can be formed at a time.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing a circuit device 62 according to the present invention will be described with reference to FIGS.

The present invention provides a step of preparing a conductive foil, a step of pressing the conductive foil while leaving at least a region of the conductive foil to be a conductive path, and forming a plurality of the conductive paths in the conductive foil. Electrically connecting and fixing a desired circuit element on the desired conductive path; forming connection means for electrically connecting an electrode of the circuit element to the desired conductive path; Covering the circuit element, the connection means and the conductive path, molding with an insulating resin so as to fill a groove between the conductive paths, and integrating the conductive path and the insulating resin; The method includes a step of removing the other portion while leaving the conductive path from the back surface of the foil, and a step of cutting the insulating resin to separate it into individual circuit devices.

First, the first step of the present invention is to prepare a sheet-shaped conductive foil 51 as shown in FIG.

The material of the conductive foil 51 is selected in consideration of the adhesion of the brazing material, the bonding property, and the plating property.
As the material, a conductive foil mainly containing Cu, a conductive foil mainly containing Al, a conductive foil made of an alloy such as Fe-Ni, or the like is used.

What is important here is that both conductive foils can be etched and that the resistance value is low. For example,
Cu, Al, Au, Ag, P
t, etc., but considering cost and workability, Cu
And Al are suitable. Cu is the most adopted material because of its low resistance and low cost, and is a material that can be wet-etched. However, it is a material that is difficult to dry-etch.

On the other hand, Al is a material that is frequently used for wiring of semiconductor ICs and can be anisotropically etched. Since the side walls can be etched straight, wiring can be formed at a higher density.

The thickness of the conductive foil is preferably about 0.1 mm to 1.0 mm in consideration of drawing described later. However, even if the thickness of the conductive foil is
Basically, there is no problem as long as drawing can be performed even if the drawing is more than mm.

The conductive foil 51 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or a conductive foil cut to a predetermined size is prepared. It may be transported to each step described later.

In the second step of the present invention, as shown in FIG.
The conductive path is formed by pressing the conductive foil 51 excluding at least a region serving as the conductive path with a mold. At this time,
No shear surface or fracture surface is formed on the side surface of the conductive path.

Next, as shown in FIG. 2A, conductive paths 53A to 53D for forming conductive paths on which circuit elements such as semi-power transistors, diodes, IC chips and the like are installed, and conductive paths for wire bonding of thin metal wires. A mold 52 having a convex portion is prepared. A plurality of conductive path forming portions are formed on the surface of the mold 52. Then, the conductive foil 51 is set on the mold 52.

Next, the conductive foil 51 placed on the mold 52
The other mold 54 paired with the mold 52 is provided on the upper side. Contrary to the mold 52, the mold 54 is formed with a conductive path on which a circuit element such as a semi-power transistor, a diode, or an IC chip is installed, or a conductive path forming section 53A to 53D where a thin metal wire is wire-bonded. It is formed as. A plurality of conductive path forming portions are formed on the surface of the mold 54 corresponding to the mold 52.

The conductive foil 51 is pressed from both sides by dies 52 and 54.

Next, as shown in FIG.
A plurality of conductive paths 55 </ b> A to 53 </ b> D are formed in the conductive foil 51 pressed by 2 and 54. In this drawing process,
The present invention is characterized in that the conductive foil 51 is squeezed from both sides of the conductive foil 51 using the convex portions and concave portions of the molds 52 and 54. As a result, neither a shear surface nor a fracture surface is formed on the side surface of the conductive foil 51.

Although a plurality of conductive paths 55A to 53D are formed on the conductive foil 51 by the drawing process, portions other than the conductive paths 55A to 53D are extruded and maintained as an integrated sheet. , This conductive foil 51 is connected to each conductive path 5
Not separated into 5A to 53D. Therefore, it can be handled as a sheet-shaped conductive foil 51 integrally, and has a feature that when the insulating resin is molded, the work of transporting to the mold and mounting on the mold becomes very easy.

In the third step of the present invention, as shown in FIG.
A desired circuit element is electrically connected to and fixed on a desired conductive path, and a connection means for electrically connecting an electrode of the circuit element to the desired conductive path is formed. That is, the circuit elements 56 and 59 are electrically connected and mounted on the conductive paths 55A to 55D, and are electrically connected by the connection means.

The circuit elements include a semiconductor element 56 such as a transistor, a diode, and an IC chip, and a passive element 59 such as a chip capacitor and a chip resistor. These elements may be bare chips or sealed chips. Although the thickness is increased, a face-down element (also called a flip chip) such as a CSP or a BGA can be mounted.

Here, the bare transistor chip 56
Is die-bonded to the conductive path 55A. The emitter electrode and the conductive path 55B, and the base electrode and the conductive path 55C
Are connected via a thin metal wire 58 fixed by a ball bonding method using thermocompression bonding or a web bonding method using ultrasonic waves. A chip capacitor or a passive element is mounted and fixed between the conductive paths 55C and 55D via a brazing material such as solder or a conductive paste 60 such as Ag paste.

When the pattern shown in FIG. 14 is applied in the present embodiment, the bonding pad 26 has a very small size, but as shown in FIG.
B, 55C. Therefore, there is an advantage that the energy of the bonding tool can be transmitted, and the bonding property can be improved. Further, in cutting a thin metal wire after bonding, there is a case where the thin metal wire is subjected to a pull cut. At this time, the bonding pads are connected to the conductive foils 55B, 5B.
Since it is integrated with 5C, the phenomenon that the bonding pad floats can be eliminated, and the pull cut property can be improved.

In the fourth step of the present invention, as shown in FIG.
The circuit element, the connecting means and the conductive path are covered, and the conductive path 55
It is to mold with an insulating resin so as to fill the space between A to 55D.

In this step, an insulating resin 61 is attached between the conductive paths 55A to 55D and between the conductive paths 55A to 55D. This can be achieved by transfer molding, injection molding, potting, printing or coating. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a polyimide resin and polyphenylene sulfide can be realized by injection molding.

Insulating resin 6 coated on the surface of conductive foil 51
1 is at the top of the circuit element (here, a thin metal wire 58).
From the top) is adjusted so as to cover about 100 μm. This thickness can be increased in consideration of strength,
It is also possible to make it thinner.

Before coating the insulating resin 61, for example, a silicone resin or the like may be potted to protect a connection portion of a semiconductor chip or a thin metal wire.

Conventionally, a transfer mold has been required for each component size. However, according to the present invention, since the insulating resin 61 is integrally molded with the conductive foil 51 by transfer molding, the transfer molding die may be related to the size of the component if there is one set corresponding to the size of the frame. And transfer molding can be performed using the same mold.

In the fifth step of the present invention, as shown in FIG.
The purpose is to remove the connection portion of the conductive foil 51. That is,
There is a step of chemically and / or physically removing the back surface of the conductive foil 51 and separating it as conductive paths 55A to 55D.
This step can be performed by polishing, grinding, etching, laser metal evaporation, or the like.

In one example of the embodiment of the present invention, as shown in FIG. 5, up to the two-dot chain line portion shown in FIG.
The insulating resin 61 is formed from the bottom of the concave portion formed in the conductive foil 51.
Until the surface is exposed. By this operation, the conductive paths 55A to 55D can be separated.

The other step of removing the back surface of the conductive foil 51 is to cut the back surface of the conductive foil 51 to a position short of the two-dot chain line portion shown in FIG. 4 and then cut the insulating resin 61 from the bottom of the concave portion. Until conductive is exposed, conductive foil 5
And a step of removing the back surface of the conductive foil 51 by etching until the insulating resin 61 is exposed from the bottom of the concave portion.

Here, for example, if the lower surface is cut until the insulating resin 61 is exposed, shavings of the conductive foil 51 and thin burr-like metal that is thinned outside will bite into the insulating resin 61 and the like. There are cases. Therefore, the conductive path 55A
In the final stage of separating ~ 55D, a process of separating by etching is used, so that the insulating resin 61 and the like are more surely cut off by shavings of the conductive foil 51 and thin burr-like metal outside. Formed without. As a result, short-circuiting between the finely-spaced conductive patterns can be prevented.

Further, the conductive paths 55A exposed as necessary
A conductive material such as solder is adhered to .about.55D. Also, the conductive path 5
When a conductive film is applied to the back surfaces of 5A to 55D, the conductive film may be formed in advance on the back surface of conductive foil 51 in FIG. In this case, the portion corresponding to the conductive path may be selectively applied. The deposition method is, for example, plating. The conductive film is preferably made of a material having resistance to etching.

In the sixth step of the present invention, as shown in FIG.
The purpose is to cut the insulating resin 61 and separate it into individual circuit devices.

In the present embodiment, only a circuit device in which a transistor and a chip resistor are mounted on a conductive path is shown. However, in practice, a large number of circuit devices are arranged in a matrix by using this as a unit. It is arranged on the foil 51. In this case, the portion of the insulating resin 61 filled between the conductive paths between the units is cut by a dicing device to be separated individually. As a result, smooth dicing can be performed, and wear of the dicing blade can be reduced.

By the above manufacturing method, the insulating resin 61
Circuit device 6 with conductive paths 55A to 55D exposed on the back surface of
2 can be realized.

In the above-described embodiment of the present invention, in the step of forming a desired conductive path in the conductive foil, when the mold having the desired conductive path forming portion is pressed down with the lower surface, that is, the conductive foil is formed. The case where the conductive path is formed on the surface has been described. However, in the present embodiment, a similar effect can be obtained when a mold having a desired conductive path forming portion is pressed on the upper surface, that is, when a conductive path is formed on the back surface of the conductive foil. .

The structure of the circuit device of the present invention will be described with reference to FIG.

FIG. 6 shows conductive paths 55A to 55D embedded in an insulating resin 61. Circuit elements 56 and 59 are fixed on the conductive paths 55A to 55D.
1. Circuit device 62 supporting conductive paths 55A-55D at 1.
It is shown.

In this structure, the circuit elements 56 and 59, the conductive path 5
5A to 55D and an insulating resin 61 embedded in the conductive paths 55A to 55D.
The space between 5A to 55D is filled with the insulating resin 61. The conductive paths 55 </ b> A to 55 </ b> A
55D is supported.

The space between the conductive paths 55A to 55D is filled with the insulating resin 61, so that the conductive paths 55A to 55D have an advantage of being insulated from each other.

By exposing the conductive paths 55A to 55D, the back surface of the conductive paths can be connected to the outside,
It has a feature that the through hole TH of the conventional structure as shown in FIG. 9 can be eliminated.

As described above, the manufacturing method of the present invention described in the above embodiment can also implement a complicated pattern as shown in FIG. Especially bent, bonding pad 2
6, the other end of which is electrically connected to the circuit element has a narrow width and a long length. Therefore, warpage due to heat is extremely large, and peeling is a problem in the conventional structure. However, in the present invention, since the wiring is embedded and supported in the insulating resin, the warping of the wiring itself,
Peeling and detachment can be prevented. In addition, the bonding pad itself has a small plane area, and in the conventional structure, the bonding pad is peeled off. However, in the present invention, since the bonding pad is embedded in the insulating resin as described above, there is an advantage that the detachment can be prevented. Have.

Further, there is an advantage that a circuit device in which a circuit is embedded in the insulating resin 61 can be realized. In the case of the conventional structure, it is as if a circuit is incorporated in a printed circuit board or a ceramic substrate. This will be described in a later mounting method.

The right side of FIG. 13 shows a flow in which the present invention is simply summarized. Preparation of conductive foil, Ag or N
A circuit device can be realized by eight steps of plating of i, etc., drawing of conductive foil, die bonding, wire bonding, transfer molding, back surface treatment of conductive paths, and dicing. Moreover, without supplying the supporting substrate from the manufacturer,
All processes can be produced in-house. Embodiment explaining Types of Circuit Devices and Methods of Mounting These Circuits FIG. 7 shows a circuit device 72 on which a face-down type circuit element 71 is mounted. As the circuit element 71,
Bare semiconductor chip, CSP or BGA with sealed surface
(Flip chip) and the like. FIG. 8 shows a circuit device 74 on which a passive element 73 such as a chip resistor or a chip resistor is mounted. Since they are thin and sealed with an insulating resin, they also have excellent environmental resistance.

FIG. 9 illustrates the real layer structure. First, FIG. 9A shows a conductive path 82 formed on a mounting board 81 such as a printed board, a metal board, or a ceramic board.
The circuit devices 62, 71, 7 of the present invention described so far
4 is implemented.

In particular, since the conductive path 55 A to which the back surface of the semiconductor chip 56 is fixed is thermally coupled to the conductive path 82 of the mounting board 81, the heat of the circuit device is radiated through the conductive path 82. be able to. Further, when a metal substrate is used as the mounting substrate 81, the temperature of the semiconductor chip 56 can be further reduced by helping the heat dissipation of the metal substrate. Therefore, the driving capability of the semiconductor chip can be improved.

For example, power MOS, IGBT, SIT,
Transistor for driving large current, IC for driving large current (M
OS type, BIP type, Bi-CMOS type) memory element and the like are preferable.

The metal substrate is preferably an Al substrate, a Cu substrate, or an Fe substrate. In consideration of a short circuit with the conductive path 82, an insulating resin and / or an oxide film is formed.

FIG. 9B shows an example in which the circuit device 62 is used as the substrate 81 in FIG. 9A. This is the most important feature of the present invention. In other words, in the conventional printed circuit board and ceramic substrate, the through hole TH is formed in the substrate at most,
The present invention has a feature that a substrate module in which an IC circuit is built can be realized. For example, at least one circuit (may be built in as a system) is built in a printed circuit board.

Further, conventionally, a printed circuit board, a ceramic substrate, or the like is required as a supporting substrate. However, the present invention can realize a substrate module that does not require this supporting substrate. This can reduce the thickness and the weight as compared with a hybrid substrate composed of a printed substrate, a ceramic substrate or a metal substrate.

Since the circuit device 62 can be used as a support substrate and circuit elements can be mounted on exposed conductive paths,
A high-performance board module can be realized. In particular, if the present circuit device is used as a support substrate and the present circuit device 91 is mounted thereon as an element, a lighter and thinner substrate module can be realized.

Therefore, according to these mounting forms, a small and lightweight electronic device in which this module is mounted can be realized.

The hatched portion indicated by reference numeral 93 is
It is an insulating film. For example, a polymer film such as a solder resist is preferable. By forming this, it is possible to prevent a short circuit between the conductive path buried in the substrate 62 and the electrode formed on the circuit element 91 or the like.

Further, advantages of the present circuit device will be described with reference to FIG. In the conventional mounting method, a semiconductor maker forms a package type semiconductor device and a flip chip, and a set maker mounts a semiconductor device supplied by a semiconductor maker and a passive element supplied by a component maker on a printed circuit board. Then, this was assembled into a set as a module to form an electronic device. However, in the present circuit device, the semiconductor device itself can be adopted as a mounting substrate, so that a semiconductor maker can complete a mounting substrate module using a post-process and supply it to a set maker. Therefore, the set maker can largely omit the device mounting on this substrate.

[0077]

As is evident from the above description, according to the present invention, the circuit device is constituted by the minimum required of the circuit device, the conductive path and the insulating resin, so that the circuit device has no waste of resources. Therefore, there is no extra component until completion, and a circuit device that can greatly reduce the cost can be realized. Further, by setting the coating thickness of the insulating resin and the thickness of the conductive foil to optimal values, it is possible to realize a very small, thin, and lightweight circuit device. Furthermore, wiring in which the phenomenon of warpage or peeling is remarkable is
These problems can be solved because they are embedded in and supported by the insulating resin.

Further, since only the back surface of the conductive path is exposed from the insulating resin, the back surface of the conductive path can be immediately used for connection to the outside, and the back electrode and the through hole of the conventional structure as shown in FIG. 14 are unnecessary. It has the advantage that can be.

Further, in the method of manufacturing a circuit device according to the present invention, the conductive foil itself, which is the material of the conductive path, is made to function as a support substrate, and is used when forming the conductive path forming portion or mounting the circuit element.
The whole is supported by the conductive foil until the insulating resin is applied, and when the conductive foil is separated as each conductive path, the insulating resin is used as a supporting substrate to function. Therefore, the circuit element, the conductive foil, and the insulating resin can be manufactured with the minimum necessary. As described in the conventional example, a support substrate is not required for originally configuring the circuit device, and the cost can be reduced. In addition, the need for a support substrate, the fact that the conductive path is embedded in the insulating resin, and the ability to adjust the thickness of the insulating resin and the conductive foil allow the formation of extremely thin circuit devices. There is also.

Further, according to the circuit device manufacturing method of the present invention, in the step of forming a plurality of conductive paths on the conductive foil,
A mold in which a desired conductive path pattern is formed as a convex portion,
And a mold in which a pattern of a desired conductive path corresponding to the mold is formed as a concave portion is prepared, and a conductive foil is placed on the pair of molds and pressed from both sides, so that the desired conductive path is conductive. Form on foil. Accordingly, a large number of units can be formed at one time, and the cost can be significantly reduced.

Further, according to the method of manufacturing a circuit device of the present invention, in a transfer molding step of a circuit element used in the circuit device, an insulating resin is integrally molded by transfer molding a plurality of circuit elements formed on a metal plate. Therefore, if a single mold for transfer molding is used in accordance with the size of the frame, the same mold can be used for transfer molding regardless of the size of the circuit device. it can.

Further, according to the method of manufacturing a circuit device of the present invention, the circuit device can be used as a support substrate and the circuit element can be mounted on the exposed conductive path, so that a high-performance board module can be realized. In particular, this circuit device is used as a support substrate,
If the circuit device 91 is mounted thereon as an element, a lighter and thinner substrate module can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an embodiment of a method for manufacturing a circuit device according to the present invention.

FIG. 2 is a diagram illustrating an embodiment of a method of manufacturing a circuit device according to the present invention.

FIG. 3 is a diagram illustrating an embodiment of a method for manufacturing a circuit device according to the present invention.

FIG. 4 is a diagram illustrating an embodiment of a method of manufacturing a circuit device according to the present invention.

FIG. 5 is a diagram illustrating an embodiment of a method of manufacturing a circuit device according to the present invention.

FIG. 6 is a diagram illustrating an embodiment of a method of manufacturing a circuit device according to the present invention.

FIG. 7 is a diagram illustrating a circuit device according to the present invention.

FIG. 8 is a diagram illustrating a circuit device according to the present invention.

FIG. 9 is a diagram illustrating a mounting structure of the circuit device of the present invention.

FIG. 10 is a diagram illustrating a mounting structure of a conventional circuit device.

FIG. 11 is a diagram illustrating a conventional circuit device.

FIG. 12 is a diagram illustrating a method for manufacturing a conventional circuit device.

FIG. 13 is a diagram illustrating a method for manufacturing a circuit device according to the related art and the present invention.

FIG. 14 is a pattern diagram of an IC circuit applied to the conventional and the circuit devices of the present invention.

FIG. 15 is a diagram illustrating the positioning of a semiconductor maker and a set maker.

[Explanation of symbols]

 REFERENCE SIGNS LIST 51 conductive foil 52 mold 55A conductive path 56 circuit element 58 fine metal wire 61 insulating resin

Claims (18)

[Claims] 1. A step of preparing a conductive foil, a step of pressing the conductive foil while leaving at least a region of the conductive foil to be a conductive path, and forming a plurality of the conductive paths in the conductive foil. Electrically connecting and fixing the circuit element on the desired conductive path, and covering the circuit element, the connecting means and the conductive path, and insulating to fill the groove between the conductive paths. Manufacturing a circuit device, comprising: a step of molding with a resin to integrate the conductive path with the insulating resin; and a step of removing the other from the back surface of the conductive foil while leaving the conductive path. Method. 2. The step of pressing the conductive foil includes placing the conductive foil on a pair of molds provided with a plurality of conductive path forming portions, and pressing the conductive foil from both sides of the conductive foil. 2. The method according to claim 1, further comprising the step of: 3. The method of manufacturing a circuit device according to claim 1, wherein the step of removing the remaining portion from the back surface of the conductive foil while leaving the conductive path is a step of cutting the conductive foil from the back surface. . 4. The method according to claim 1, wherein the step of removing the remaining conductive paths from the back surface of the conductive foil includes first cutting the conductive foil from the back surface and then etching the conductive foil from the cut surface. Method for manufacturing a circuit device. 5. The method for manufacturing a circuit device according to claim 1, wherein one or both of a semiconductor bare chip, a flip chip, a chip circuit component, a package type semiconductor element, and a CSP are fixed to the circuit element. 6. The method according to claim 1, wherein the insulating resin is attached by transfer molding. 7. The conductive foil may be made of copper, aluminum, iron,
5. The method according to claim 1, wherein the circuit device is made of nickel. 8. The method according to claim 1, wherein the conductive path forms at least a wiring. 9. A step of preparing a conductive foil, a step of pressing the conductive foil while leaving at least a region of the conductive foil to be a conductive path, and forming a plurality of the conductive paths in the conductive foil. Electrically connecting the circuit element on the desired conductive path and fixing the circuit element; forming a connecting means for electrically connecting an electrode of the circuit element to the desired conductive path; Covering the connection means and the conductive path, molding with an insulating resin so as to fill the groove between the conductive paths, and integrating the conductive path and the insulating resin; and A method of manufacturing a circuit device, comprising: a step of removing the remaining portion while leaving the conductive path from the back surface; and a step of cutting the insulating resin to separate the insulating resin into individual circuit devices. 10. The step of pressing the conductive foil includes placing the conductive foil on a pair of molds provided with a plurality of conductive path forming portions, and pressing the conductive foil from both sides of the conductive foil. The method for manufacturing a circuit device according to claim 9, wherein the process is performed. 11. The method for manufacturing a circuit device according to claim 9, wherein the step of removing the other from the back surface of the conductive foil while leaving the conductive path is a step of cutting the conductive foil from the back surface. . 12. The method according to claim 9, wherein in the step of removing the remaining conductive paths from the back surface of the conductive foil, the conductive foil is first cut from the back surface, and then etched from the cut surface. Method for manufacturing a circuit device. 13. The method for manufacturing a circuit device according to claim 9, wherein the circuit element is formed by fixing one or both of a semiconductor bare chip, a flip chip, a chip circuit component, a package type semiconductor element, and a CSP. 14. The method according to claim 9, wherein said connecting means is formed by wire bonding or brazing material. 15. The method according to claim 9, wherein the insulating resin is attached by transfer molding. 16. The method for manufacturing a circuit device according to claim 9, wherein the circuit device is separated into individual circuit devices by dicing. 17. The method according to claim 9, wherein the conductive foil is made of one of copper, aluminum, and iron-nickel. 18. The method according to claim 9, wherein the conductive path forms at least a wiring.