JP2002217327A - Package for containing semiconductor element and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for containing a semiconductor element in which thermosetting resin does not adhere unnecessarily to a wiring conductor and the electrode of a semiconductor element can be electrically connected with the wiring conductor surely and rigidly. SOLUTION: The package for containing a semiconductor element comprises an insulating plate 4 having a substantially square central through hole 4a for containing a semiconductor element, a plurality of wiring conductors 5 formed from the periphery of the through hole 4a in the upper surface of the insulating plate 4 to the outer circumferential part, an earth or power supply conductor 6 formed substantially entirely on the lower surface of the insulating plate 4, an insulation layer 12 of thermosetting resin formed on the lower surface of the earth or power supply conductor 6, and a metallic heat dissipation plate 2 bonded to the lower surface of the insulation layer 12 through a bonding layer 15 to close the through hole 4a wherein the insulation layer 12 has inner edge spaced apart by 0.05-2 mm from the opening of the through hole 4a to the outer circumferential side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating a semiconductor device such as a semiconductor integrated circuit device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element such as an MPU has a stepped through hole for accommodating a semiconductor element 20 at a central portion as shown in a sectional view of FIG. A wiring board 21 having a hole 21a, and a lower surface of the wiring board 21 which is bonded to the lower surface of the wiring board 21 via a bonding layer 23 so as to cover the through hole 21a, and which has a mounting portion 22a in the center of the upper surface where the semiconductor element 20 is mounted. And a radiator plate 22 made of a metallic material.

In this conventional package for housing a semiconductor element, the wiring board 21 is made of two insulating plates made of glass cloth impregnated with a thermosetting resin such as an epoxy resin.
24 and 25 are also laminated via an adhesive layer 26 made of glass cloth impregnated with a thermosetting resin such as an epoxy resin. A hole 24a is formed and a plurality of wiring conductors 27 extend from the periphery of the through hole 24a on the upper surface to the outer peripheral portion.
A grounding or power supply conductor 28 is attached to substantially the entire lower surface thereof, and the insulating plate 25 has a through hole 24a at the center thereof.
A larger through hole 25a is formed, and an external connection conductor 29 is attached to the upper surface. A plurality of through holes 30 are provided in the outer peripheral portions of the insulating plates 24 and 25 and the adhesive layer 26.
27 and a through conductor 31 for electrically connecting the grounding or power supply conductor 28 to the external connection conductor 29 are provided. further,
The wiring board 21 and the heat sink
An insulating layer 32 made of epoxy resin is adhered to make the connection with the bonding layer 22 strong.
22 is joined via a joining layer 23 made of glass cloth impregnated with a thermosetting resin such as an epoxy resin.

According to this conventional semiconductor device housing package, the semiconductor device 20 is mounted on the mounting portion 22a of the heat sink 22.
And electrically connecting each electrode of the semiconductor element 20 to the wiring conductor 27 via an electrical connection means such as a bonding wire 33, and then externally connecting the external connection conductor 29 with a solder ball or the like. The semiconductor element 20 is hermetically sealed by joining the sealing member 34 and potting a sealing resin (not shown) into the through hole 21a to hermetically seal the semiconductor element 20.

The wiring board 21 of such a package for housing semiconductor elements has been manufactured by the following method.

First, as shown in a sectional view of FIG.
An insulating plate 24A having a metal layer 27A for the wiring conductor 27 attached on the upper surface and a metal layer 28A for the grounding or power supply conductor 28 on the entire lower surface, and a metal for the external connection conductor 29 on the upper surface. Tier 29
A is attached and an insulating plate 25A having a through hole 25a in the center.
And an adhesive layer 26A having a through hole substantially the same size as the through hole 25a at the center.

At this time, the insulating plates 24A and 25A are formed by impregnating a glass cloth with a thermosetting resin such as an epoxy resin, and the thermosetting resin is thermoset. The metal layers 27A, 28A, 29A are etched into a predetermined pattern, and are fixed to the insulating plates 24A, 25A by a thermosetting resin contained in the insulating plates 24A, 25A. On the other hand, the adhesive layer 26A is formed by impregnating a glass cloth with a thermosetting resin such as an epoxy resin, and the thermosetting resin is in an uncured state.

Next, as shown in the sectional view of FIG.
The insulating plates 24A and 25A are laminated with the adhesive layer 26A interposed therebetween, and the thermosetting resin of the adhesive layer 26A is thermoset, so that the insulating plates 24A and 25A are joined by the adhesive layer 26A. Is obtained.

Next, as shown in the sectional view of FIG.
A through hole 24a for accommodating a semiconductor element in the center of the laminate 21A and a plurality of through holes 30 in the outer peripheral portion are formed by cutting, and a through conductor 31 is formed on the inner wall of the through hole 30 by electroless plating and electrolytic plating. The external connection conductor 29 is electrically connected to the wiring conductor 27 and the grounding or power supply conductor 28 corresponding thereto.

Finally, as shown in the sectional view of FIG. 5D, an uncured thermosetting resin for the insulating layer 32 is formed on the entire lower surface of the insulating plate 24 on which the grounding or power supply conductor 28 is attached. The wiring board 21 is obtained by applying the paste and thermally curing the paste.

[0011]

However, according to this conventional package for housing a semiconductor element, the through hole 24a
Since the insulating layer 32 is formed on the entire lower surface of the insulating plate 24 on which the grounding or power supply conductor 28 is formed, the uncured thermosetting resin for the insulating layer 32 is used. At the time of thermosetting, a part of the thermosetting resin for the insulating layer 32 may reach the upper surface of the wiring conductor 27 by flowing through the inner wall of the through hole 24a by capillary action due to fluidization at the time of hardening. When the thermosetting resin adheres to the upper surface of the wiring conductor 27, each electrode of the semiconductor element 20 is connected to the wiring conductor 27 by a bonding wire 33.
However, there is a problem that it is not possible to reliably connect electrically via the electrical connection means such as the above.
The inner wall of the through hole 24a is formed by cutting, and the surface roughness is so rough that the fluidized resin is easily transmitted by capillary action.

The present invention has been devised in view of such a conventional problem, and an object of the present invention is to prevent unnecessary thermosetting resin from adhering to the surface of a wiring conductor, and to provide a semiconductor device having various components. An object of the present invention is to provide a package for housing a semiconductor element and a method of manufacturing the same, which can reliably and electrically connect electrodes to corresponding wiring conductors.

[0013]

According to the present invention, there is provided a package for accommodating a semiconductor element, comprising: an insulating plate having a substantially rectangular through hole for accommodating a semiconductor element in a central portion; A plurality of wiring conductors applied to
A grounding or power supply conductor attached to substantially the entire lower surface of the insulating plate, an insulating layer made of a thermosetting resin applied to the lower surface of the grounding or power supply conductor, and a semiconductor on the lower surface of the insulating layer. A semiconductor device housing package comprising: a metal heat radiating plate joined via a joining layer so as to close the element housing through hole, and is attached to a lower surface of a grounding or power supply conductor. The insulating layer is characterized in that its inner edge is located on the outer peripheral side of 0.05 to 2 mm from the opening of the through hole for accommodating the semiconductor element.

Further, in the method of manufacturing a package for housing a semiconductor element according to the present invention, a metal layer for a wiring conductor is coated on an upper surface and a metal layer for a ground or power supply conductor is coated on a lower surface, and a semiconductor element storage layer is formed at a center portion. Preparing an insulating plate having through holes formed therein, and applying an uncured thermosetting resin paste to the lower surface of the grounding or power supply conductor, the inner edge of which is 0.05 to 2 mm wider than the opening of the through hole for accommodating the semiconductor element. A step of applying the insulating layer by applying it so as to be located on the outer peripheral side, and applying an insulating layer, and a metal radiating plate on a lower surface of the insulating layer via a bonding layer so as to cover the through hole for housing the semiconductor element. And joining.

According to the package for accommodating a semiconductor element of the present invention, the insulating layer applied to the lower surface of the grounding or power supply conductor has an inner edge which is larger than the opening of the through hole for accommodating the semiconductor element.
Since it is located on the outer peripheral side of 0.05 to 2 mm, the thermosetting resin fluidized when the thermosetting resin for the insulating layer is thermoset hardly reaches the through hole for housing the semiconductor element.

According to the method of manufacturing a package for accommodating a semiconductor element of the present invention, the uncured thermosetting resin paste is applied to the lower surface of the conductor for grounding or power supply so that the inner edge of the paste is 0.05 mm wider than the opening of the through hole for accommodating the semiconductor element. After being applied so as to be located on the outer peripheral side of about 2 mm, the coating is cured and an insulating layer is applied, and a metal heat sink is provided on the lower surface of the insulating layer via a bonding layer so as to cover the through hole for housing the semiconductor element. To join
When the thermosetting resin paste for the insulating layer is cured, the fluidized thermosetting resin hardly reaches the through hole for housing the semiconductor element.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a semiconductor device housing package according to the present invention will be described with reference to the accompanying drawings. FIG.
It is sectional drawing which shows an example of embodiment of the package for semiconductor element accommodation of this invention. In the figure, 1 is a wiring board, 2 is a heat sink, and these mainly constitute a semiconductor element housing package of the present invention for housing the semiconductor element 3. In this example, the insulating plate 4 has a through hole 4a for forming a cavity for accommodating the semiconductor element 3 in the center, and a wiring conductor 5 on the upper surface and a grounding or power supply conductor 6 on the lower surface. An example in which a wiring board 1 is formed by bonding an insulating plate 7 having a through hole 7a larger than the through hole 4a at the center and having an external connection conductor 8 attached to the upper surface thereof through an adhesive layer 9 at the center portion. Is shown. In addition, this wiring board 1
A plurality of through holes 10 are formed in the outer peripheral portion of the
A through conductor 11 is adhered to the inner wall of 10. Further, an insulating layer 12 is provided on the lower surface of the grounding or power supply conductor 6. The grounding or power supply conductor 6 functions as a grounding conductor or a power supply conductor depending on which of the ground electrode or the power supply electrode of the semiconductor element 3 is electrically connected to the grounding or power supply conductor 6. Or

The insulating plates 4 and 7 constituting the wiring board 1 are in a substantially rectangular frame shape obtained by impregnating a cloth of glass fiber or aramid fiber with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. The wiring conductor 5 functions as a support for the grounding or power supply conductor 6 and the external connection conductor 8, and forms a space for accommodating the semiconductor element 3 in the through holes 4 a and 7 a.

The adhesive layer 9 for bonding the insulating plates 4 and 7 is also made by impregnating a cloth of glass fiber or aramid fiber with a thermosetting resin such as epoxy resin or bismaleimide triazine resin. It functions as an adhesive member for adhering 4 and 7.

The wiring conductor 5 attached to the upper surface of the insulating plate 4
Is formed of a metal such as copper foil, and is formed in a plurality of band-shaped patterns from the vicinity of the opening of the through hole 4a to the outer peripheral portion. The wiring conductor 5 functions as a part of a conductive path for electrically connecting each electrode of the semiconductor element 3 housed in the package to an external electric circuit. Are connected via bonding wires 13, and the outer peripheral portions thereof are connected to the through conductors 11.

The grounding or power supply conductor 6 attached to the lower surface of the insulating plate 4 is made of metal such as copper foil.
Is formed on substantially the entire lower surface of the substrate. The ground or power supply conductor 6 has a function of supplying a ground or power supply potential to the semiconductor element 3 and adjusting the characteristic impedance of the wiring conductor 5 to a predetermined value, and is electrically connected to the through conductor 11. .

If the inner edge of the grounding or power supply conductor 6 is provided 0.1 to 5 mm outside the opening of the through hole 4a of the insulating plate 4, the through hole 4a is formed in the insulating plate 4 as described later. No burrs are generated on the grounding or power supply conductor 6 when processing the semiconductor device, and when the semiconductor element 3 is accommodated inside the package, the grounding or power supply conductor 6 may come into contact with the semiconductor element 3. As a result, it is possible to prevent the semiconductor element 3 from being unnecessarily short-circuited between the semiconductor element 3 and the conductor 6 for grounding or the power supply, and to prevent the electric insulation from being deteriorated. Therefore,
It is preferable that the grounding or power supply conductor 6 be provided with its inner edge located on the outer peripheral side of about 0.1 to 5 mm from the opening of the through hole 4a. If the distance between the inner edge of the grounding or power supply conductor 6 and the opening of the through hole 4a is shorter than 0.1 mm, there is a large risk that the grounding or power supply conductor 6 will have burrs when the through hole 4a is processed. On the other hand, if the distance between the inner edge of the grounding or power supply conductor 6 and the opening of the through hole 4a is longer than 5 mm, the grounding or power supply conductor 6 cannot be secured with a sufficient area, and the semiconductor element 3 Therefore, it is difficult to supply a sufficiently stable ground or power supply potential, and it is difficult to adjust the characteristic impedance of the wiring conductor 5 to a predetermined value.

The external connection conductor 8 attached to the upper surface of the insulating plate 7 functions as a connection conductor with an external electric circuit and is formed so as to be electrically connected to the through conductor 11. . An external connection member 14 made of a solder ball or the like is attached to the external connection conductor 8.

The wiring conductor 5 and the external connection conductor 8
Has a thickness of usually about 5 to 50 μm. The thickness is preferably 5 μm or more from the viewpoint of transmitting a high-speed signal, and is preferably 50 μm or less in order to process the wiring conductor 5 and the external connection conductor 8 with high dimensional accuracy. The wiring conductor 5 and the external connection conductor 8
Usually, a nickel plating layer having a thickness of about 1 to 30 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially applied to the exposed surface by electroless plating or electrolytic plating. Thereby, oxidation corrosion of the wiring conductor 5 and the external connection conductor 8 can be effectively prevented, and the electrical connection between the wiring conductor 5 and the bonding wire 13 and the connection between the external connection conductor 8 and the external connection member 14 can be prevented. Good electrical connection can be achieved.

The through conductor 11 attached to the inner wall of the through hole 10 functions as a connection conductor for electrically connecting the wiring conductor 5, the grounding or power supply conductor 6, and the external connection conductor 8 to the wiring board. 1 is formed by applying a copper plating layer having a thickness of about 4 to 50 μm to the inner wall of a large number of through holes 10 formed from the upper surface to the lower surface by using an electroless plating method or an electrolytic plating method. The thickness of the through conductor 11 is 4
When the thickness is less than μm, it tends to be difficult to electrically connect the wiring conductor 5 or the grounding or power supply conductor 6 to the external connection conductor 8 satisfactorily. It takes a long time to form the through conductor 11,
The efficiency of manufacturing packages tends to be very low.

Further, an insulating layer 12 made of a thermosetting resin such as an epoxy resin is formed on the lower surface of the grounding or power supply conductor 6.
Are formed. The insulating layer 12 functions as a joining base member for firmly joining the heat radiating plate 2 to the wiring board 1, and the heat radiating plate 2 is joined to the lower surface of the insulating layer 12 via the joining layer 15 so that the wiring is formed. The substrate 1 and the heat sink 2 are joined. The insulating layer 12 may contain about 5 to 50% by weight of a filler made of an inorganic insulating powder such as silica. By including a filler, the thermal expansion coefficient of the insulating layer 12 can be adjusted, and the heat resistance and the like of the insulating layer 12 can be improved. Such an insulating layer 12
Is formed by applying a thermosetting resin paste such as an uncured epoxy resin on the lower surface of the grounding or power supply conductor 6 in a frame shape, and then thermosetting the paste.

By the way, in the semiconductor element housing package of the present invention, the insulating layer 12 is formed such that the inner edge thereof is located 0.05 to 2 mm on the outer peripheral side of the opening of the through hole 4a. And that is important. The insulating layer 12
Since the inner edge is formed so as to be positioned 0.05 to 2 mm on the outer peripheral side from the opening of the through hole 4a, the insulating layer 12
When forming the layer, a part of the fluidized thermosetting resin for the insulating layer 12 is effectively prevented from reaching the through hole 4a. Therefore, unnecessary thermosetting resin due to the insulating layer 12 does not adhere to the wiring conductor 5, and the semiconductor element 3
These electrodes can be reliably and firmly connected to the wiring conductor 5 via an electrical connection means such as a bonding wire 13.

The insulating layer 12 is formed such that the inner edge of the insulating layer 12
When the distance to the opening a is less than 0.05 mm, when the insulating layer 12 is formed, a part of the fluidized thermosetting resin for the insulating layer 12 reaches the through hole 4a, and this is the through hole 4a. There is a large danger that it will adhere to the wiring conductor 5 along the inner wall. On the other hand, if it exceeds 2 mm, it tends to be difficult to satisfactorily join the wiring board 1 and the heat sink 2 without gaps. Therefore, the distance from the inner edge of the insulating layer 12 to the opening of the through hole 4a is specified in the range of 0.05 to 2 mm.

Further, as shown in the bottom view of the wiring board 1 in FIG. 2, if the distance from the inner edge of the insulating layer 12 to the through hole 4a is wide at a position corresponding to each corner of the through hole 4a, When the insulating layer 12 is formed, the fluidized thermosetting resin for the insulating layer 12 can be more effectively prevented from reaching the through hole 4a. At the corners of the through holes 4a, the fluidized thermosetting resin for the insulating layer 12 is likely to collect, and the fluidized thermosetting resin is easily transmitted to the inner wall.
It is effective to increase the distance from the inner edge to the through hole 4a at a position corresponding to each corner of the through hole 4a. Therefore, the insulating layer 15 is formed from the inner edge thereof through the through hole 4a.
It is preferable to make the distance to the opening wide at a position corresponding to each corner of the through hole 4a.

Further, if the insulating layer 12 is formed so as to cover the side surface on the inner edge side of the grounding or power supply conductor 6 with a thickness of 0.01 mm or more, the grounding or power supply conductor 6 and the semiconductor element 3 are formed.
And electrical insulation between them is ensured. Therefore,
The insulating layer 12 is provided on the inner side surface of the conductor 6 for grounding or power supply.
It is preferable to form it so as to cover it with a thickness of 0.01 mm or more.

On the other hand, the heat radiating plate 2 joined to the lower surface of the wiring board 1 via the joining layer 15 is made of a metal having excellent thermal conductivity such as copper and is joined so as to close the through hole 4a. The heat radiating plate 2 functions as a support for supporting the semiconductor element 3 and also as a heat radiating member for radiating heat generated during operation of the semiconductor element 3 to the outside. It has a mounting portion 2a for mounting the element 3. Then, the semiconductor element 3 is bonded and fixed to the mounting portion 2a via an adhesive such as an epoxy resin.

Such a heat radiating plate 2 may be formed by punching a plate made of, for example, copper into a predetermined shape using a punching die. A metal having good corrosion resistance, such as nickel or gold, is plated on the surface of the heat sink 2 by plating.
If it is applied to a thickness of μm, oxidation corrosion of the heat sink 2 can be effectively prevented. Further, in order to improve the bonding strength between the heat sink 2 and the bonding layer 15, the surface of the heat sink 2 is subjected to a blackening treatment or a blast treatment, and the surface thereof has a center line average roughness Ra.
May be formed to be about 0.2 to 3 μm.

The bonding layer 15 for bonding the wiring board 1 and the heat radiating plate 2 has a substantially rectangular frame shape made by impregnating a thermosetting resin such as an epoxy resin into a glass cloth. No voids are generated on the joint surface, the joint strength is large, and the adhesion is excellent. Such a bonding layer 15 is formed, for example, by punching a sheet of glass cloth impregnated with an uncured epoxy resin into a shape substantially the same as that of the insulating plate 4 using a punching die or the like. The wiring board 1 and the heat radiating plate 2 are firmly joined by being thermally cured while pressing from above and below. At this time, the bonding layer
The inner edge of the sheet for 15 is 0.1 to 0.1 mm from the opening of the through hole 4a.
If it is punched out so as to be located on the outer peripheral side of 1 mm, when the wiring board 1 and the heat sink 2 are joined via the joining layer 15,
Part of the thermosetting resin contained in the bonding layer 15 is formed in the through hole 4a.
It is possible to effectively prevent the adhesive from being attached to the wiring conductor 5 along the inner wall, and it is possible to firmly join the wiring board 1 and the heat sink 2 without forming a gap between them. Therefore, it is preferable to punch the sheet for the bonding layer 15 so that the inner edge thereof is located 0.1 to 1 mm on the outer peripheral side from the opening of the through hole 4a.

Thus, according to the package for housing a semiconductor element of the present invention, the semiconductor element 3 is mounted on the mounting portion 2a of the heat sink 2.
And electrically connect each electrode of the semiconductor element 3 to the wiring conductor 5 via a bonding wire 13. Thereafter, potting a sealing resin into the through holes 4a and 5a to seal the resin. By stopping, a semiconductor device is obtained.

In such a semiconductor device housing package, a solder resist layer 16 covering the outer peripheral portion of the external connection conductor 8 may be provided on the wiring board 1 if necessary. Such a solder resist layer 16 is made of, for example, a thermosetting resin such as an epoxy resin containing an insulating filler such as silica, and is provided with an external connection member 14 such as a solder ball on the external connection conductor 8. For external connection when connecting
Acts as a dam that controls the spread of 14 unwanted wets. Such a solder resist layer 16 is formed by applying an uncured photosensitive thermosetting resin paste to the upper surface of the insulating plate 7 on which the external connection conductors 8 are formed by using a screen printing method and a conventionally known solder resist layer. After etching into a predetermined pattern by photolithography, it can be formed by heat curing.

Next, a description will be given of a manufacturing method of the present invention for manufacturing the above-described semiconductor element housing package.

First, as shown in the sectional view of FIG.
An insulating plate 4A for the insulating plate 4, an insulating plate 7A for the insulating plate 7, and an uncured adhesive sheet 9A for the adhesive layer 9 are prepared. At this time, the metal layer 5A for the wiring conductor 5 is formed on the upper surface of the insulating plate 4A.
A metal layer 6A for the grounding or power supply conductor 6 on the lower surface of the insulating plate 4A, and an external connection conductor 8 on the upper surface of the insulating plate 7A.
Metal layer 8A is formed in a predetermined pattern including a region where the through hole 10 is formed. A through hole 7a is formed in the center of the insulating plate 7A.

The insulating plates 4A and 7A are formed by, for example, obtaining a sheet in which a glass cloth is impregnated with a thermosetting resin such as an uncured epoxy resin and thermosetting the sheet to form a through hole. 7a is formed by cutting the cured insulating plate 7A.
The metal layers 5A, 6A, and 8A for the wiring conductor 5, the grounding or power supply conductor 6, and the external connection conductor 8 are made of an insulating plate 4A.
After the copper foil is stuck on the entire upper and lower surfaces of the sheet for 7A and the sheet for insulating plates 4A and 7A is cured, these copper foils are subjected to a predetermined photolithography technique. It is formed by etching into a pattern. The uncured adhesive sheet 9A is formed by punching a sheet formed by impregnating a glass cloth with an uncured thermosetting resin such as an epoxy resin into a predetermined frame shape using a punching die.

Next, as shown in the sectional view of FIG.
Uncured adhesive sheet 9 between insulating plate 4A and insulating plate 7A
A and sandwich them, and using a laminating press, for example, the degree of vacuum is 4 kPa or less, the temperature is 180 to 200
90 ° C to 120 ° C under the condition of a temperature range of 2 to 4 MPa.
The adhesive sheet 9A is thermally cured by applying pressure and heating for one minute to obtain a laminate 1A for the wiring board 1 formed by bonding the insulating plate 4A and the insulating plate 7A via the adhesive sheet 9A.

Next, as shown in the sectional view of FIG.
A through-hole 4a for accommodating a semiconductor element in the center of the laminated body 1A and a plurality of through-holes 10 in the outer periphery are formed by cutting such as router processing and drilling, and electroless plating is performed on the inner wall of the through-hole 10. Conductor 11 made of copper is formed on the conductor 8 for external connection, the corresponding wiring conductor 5 and the conductor 6 for grounding or power supply by the method or the electrolytic plating method.
Are electrically connected to each other.

At this time, if the grounding or power supply conductor 6 is provided so that its inner edge is located on the outer peripheral side by about 0.1 to 5 mm from the opening of the through hole 4a, the through hole 4 is formed in the insulating plate 4A.
When forming a by cutting, it is possible to effectively prevent burrs from being generated on the inner edge of the grounding or power supply conductor 6. As a result, it is possible to provide a package in which the semiconductor element housed inside the package does not come into contact with the ground or power supply conductor 6. Therefore, the inner edge of the grounding or power supply conductor 6 has a through hole 4a.
It is preferable to provide it so that it is located on the outer peripheral side of about 0.1 to 5 mm from the opening.

Next, as shown in the sectional view of FIG.
An uncured thermosetting resin paste 12A for the insulating layer 12 is printed and applied on the lower surface of the laminate 1A by using a screen printing method, and then thermally cured to form an insulating layer on the lower surface of the grounding or power supply conductor 6. The wiring substrate 1 on which the substrate 12 is adhered is obtained.

In the manufacturing method of the present invention, the thermosetting resin paste 12A is applied by printing so that the inner edge thereof is located 0.05 to 2 mm on the outer peripheral side from the opening of the through hole 4a. And that is important. As described above, since the thermosetting resin paste 12A is printed and applied so that the inner edge thereof is positioned 0.05 to 2 mm on the outer peripheral side from the opening of the through hole 4a, the thermosetting resin paste 12A is thermoset to form an insulating layer. Thermosetting resin paste fluidized when setting to 12
Part of the 12A is effectively prevented from reaching the through hole 4a. Therefore, a portion of the thermosetting resin paste 12A does not adhere to the wiring conductor 5 along the inner wall of the through hole 4a, and as a result, each electrode of the semiconductor element 3 and the wiring conductor 5 are connected via the bonding wire 13. It is possible to provide a package for housing a semiconductor element which can be reliably and firmly electrically connected.

If the distance from the inner edge of the thermosetting resin paste 12A to the opening of the through hole 4a is less than 0.05 mm,
When the thermosetting resin paste 12A is heat-cured to form the insulating layer 12, a part of the fluidized thermosetting resin paste 12A reaches the through hole 4a, which travels along the inner wall of the through hole 4a to form a wiring conductor. When the thickness exceeds 2 mm, when the heat sink 2 is bonded to the lower surface of the wiring board 1 via the bonding layer 15, the wiring board 1
And it tends to be difficult to join them firmly without gaps. Therefore, the distance from the inner edge of the thermosetting resin paste 12A to the opening of the through hole 4a is specified in the range of 0.05 to 2 mm.

Further, as shown in the bottom view of the wiring board 1 in FIG.
If the distance to the opening a is set to be large at the portion corresponding to each corner of the through hole 4a, the thermosetting resin paste 12A
When the insulating layer 12 is formed by heat-curing, a part of the fluidized thermosetting resin paste 12A can be more effectively prevented from reaching the through hole 4a. Therefore, it is preferable that the distance from the inner edge of the thermosetting resin paste 12A to the opening of the through hole 4a is wide at a portion corresponding to each corner of the through hole 4a.

Further, if such an insulating layer 12 covers the side surface on the inner edge side of the grounding or power supply conductor 6, the insulating layer 12 covers the inner side surface of the grounding or power supply conductor 6. Thereby, unnecessary electrical short-circuiting between the ground or power supply conductor 6 and the semiconductor element 3 and a decrease in electrical insulation can be effectively prevented. Therefore, the insulating layer 12
It is preferable that the grounding or power supply conductor 6 be formed so as to cover the side surface on the inner edge side.

Finally, the heat sink 2 is bonded to the lower surface of the wiring board 1 via the bonding layer 15 to complete the semiconductor device housing package of the present invention as shown in FIG. Note that the wiring board 1 and the heat sink 2 are joined by sandwiching a sheet for the bonding layer 15 in which glass cloth is impregnated with an uncured epoxy resin or the like, and the wiring board 1 and the heat sink 2 are laminated. These are heated at a temperature of 150 to 200 ° C. for about 60 to 120 minutes while applying a pressure of 0.3 to 0.5 MPa from above and below to thermally cure the sheet for the bonding layer 15.

In this example, the formation of the through-hole 4a after bonding the insulating plate 4A and the insulating plate 7A prevents the occurrence of a large warp when bonding the two via the bonding layer 9. If the thickness of the insulating plates 4A and 7A is sufficiently large to reduce the risk of warpage, the insulating plate 4A
Before bonding A and 7A, the through-hole 4a may be formed.

Further, in the manufacturing method of the present invention, a solder resist layer 16 covering the outer peripheral portion of the external connection conductor 8 may be formed on the wiring board 1 if necessary. By providing such a solder resist layer 16, when the external connection member 14 such as a solder ball is joined to the external connection conductor 8, unnecessary spreading of the solder ball or the like can be prevented. Such a solder resist layer 16 may be formed of, for example, a thermosetting resin such as an epoxy resin containing a filler such as silica, and an uncured photosensitive thermosetting resin paste containing a filler such as silica. Is applied over substantially the entire surface of the insulating plate 7 including the external connection conductors 8 by using a screen printing method or the like, and then is etched into a predetermined pattern by using a known photolithography technique. May be formed by heating at 130 to 180 ° C. for about 1 hour to cure.

Thus, according to the method of manufacturing a package for accommodating a semiconductor element of the present invention, unnecessary thermosetting resin does not adhere to the wiring conductor 5, and the semiconductor element 3 and the wiring conductor 5 housed inside are bonded to each other by a bonding wire. It is possible to provide a semiconductor element housing package that can be securely and firmly connected via the 13 or the like.

It should be noted that the present invention is not limited to the above embodiment, and various changes can be made without departing from the gist of the present invention. For example, in the above-described embodiment, the wiring board 1 in which the two insulating plates 5 and 7 are bonded is shown as an example, but the wiring conductor and the external connection conductor are integrally formed on the upper surface of one insulating plate. And a wiring board formed by laminating three or more insulating plates, or a wiring board having a grounding or power supply conductor formed on the lower surface. Also, the through holes 4a and 5a in the above-described embodiment example.
a may be formed by punching using a punching die or by a laser processing machine. In addition, through holes
The processing of 10 may be performed using a laser processing machine.

[0052]

According to the semiconductor device housing package of the present invention, the insulating layer applied to the lower surface of the grounding or power supply conductor has an inner edge 0.05 to 2 mm larger than the opening of the semiconductor element housing through hole. Since the thermosetting resin is located on the outer peripheral side, the thermosetting resin fluidized when thermosetting the thermosetting resin for the insulating layer hardly reaches the inner wall of the through hole for housing the semiconductor element. Therefore, the thermosetting resin for the insulating layer does not adhere to the wiring conductor along the inner wall of the through hole, and as a result, each electrode of the semiconductor element and the wiring conductor are electrically connected to each other by an electrical connection means such as a bonding wire. And the electrical connection can be made surely and firmly.

According to the method of manufacturing a package for accommodating a semiconductor element of the present invention, the uncured thermosetting resin paste is applied to the lower surface of the conductor for grounding or power supply, the inner edge of which is formed through the opening of the through hole for accommodating the semiconductor element. Also applied so as to be located on the outer peripheral side of 0.05 to 2 mm, cured and applied with an insulating layer,
A heat sink made of metal is adhered to the lower surface of this insulating layer via an adhesive layer so as to close the through hole for housing the semiconductor element, so that the thermosetting resin paste is fluidized when the thermosetting resin paste is cured. It is difficult for the resin to reach the through hole for housing the semiconductor element. Therefore, the thermosetting resin for the insulating layer does not travel along the inner wall of the through hole and adhere to the wiring conductor.
As a result, it is possible to provide a semiconductor element housing package capable of securely and firmly electrically connecting each electrode of the semiconductor element and the wiring conductor via an electric connection means such as a bonding wire.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor element storage package according to the present invention.

FIG. 2 is a bottom view of the wiring board 1 in the semiconductor device housing package shown in FIG.

3 (a) to 3 (d) are cross-sectional views for explaining steps of a method for manufacturing the wiring board 1 of the package for housing semiconductor elements shown in FIG. 1;

FIG. 4 is a cross-sectional view illustrating an example of a conventional semiconductor element storage package.

5 (a) to 5 (d) are cross-sectional views for each process for explaining a method of manufacturing the wiring board 21 of the conventional package for housing semiconductor elements shown in FIG.

[Explanation of symbols]

 1 ... wiring board 2 ... heatsink 3 ... semiconductor element 4, 7 ... insulating plate 4a, 7a ... semiconductor element Through hole for accommodating 5... Wiring conductor 6... Grounding or power supply conductor 12... Insulating layer 15... Joining layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H05K 3/46 H01L 23/12 EJ 23/14 R

Claims (4)

[Claims] An insulating plate having a substantially rectangular through hole for accommodating a semiconductor element in a central portion; and a plurality of wiring conductors attached from a periphery of the through hole to an outer peripheral portion on an upper surface of the insulating plate.
A grounding or power conductor attached to substantially the entire lower surface of the insulating plate; an insulating layer made of a thermosetting resin applied to the lower surface of the grounding or power conductor; A semiconductor device housing package comprising: a metal heat radiating plate joined via a joining layer so as to close the through hole, wherein an inner edge of the insulating layer is larger than an opening of the through hole. A package for accommodating a semiconductor element, which is located on an outer peripheral side of 0.05 to 2 mm. 2. The semiconductor element storage device according to claim 1, wherein a distance from an opening of the through hole to an inner edge of the insulating layer is wide at a portion corresponding to each corner of the through hole. package. 3. A step of preparing an insulating plate having a metal layer for a wiring conductor on the upper surface, a metal layer for grounding or a power supply on the lower surface, and a through hole for accommodating a semiconductor element formed in a central portion. An uncured thermosetting resin paste is applied to the lower surface of the grounding or power supply conductor so that the inner edge thereof is positioned 0.05 to 2 mm on the outer peripheral side of the opening of the through hole, and then cured to be cured. A semiconductor element comprising the steps of: attaching an insulating layer consisting of: and bonding a metal heat sink to a lower surface of the insulating layer via a bonding layer so as to cover the through hole. Manufacturing method of storage package. 4. The semiconductor device according to claim 3, wherein a distance from an opening of the through hole to an inner edge of the thermosetting resin paste is formed wider at a portion corresponding to each corner of the through hole. Manufacturing method of storage package.