JP2002198396A - Semiconductor device, method for manufacturing semiconductor device, and circuit board for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, a method for manufacturing the semiconductor device, and a circuit board for the semiconductor device, which improve connection reliability between a semiconductor component and an object for circuit formation. SOLUTION: A coating specific area 141 is formed, to be coated with a thermosetting resin material 140 which hardens at a preheating temperature lower than a main heating temperature for connecting a mounting board side electrode 107 and a circuit board side electrode 121 with a solder 130. Therefore, when the solder is molten, the thermosetting resin compound 140 has hardened. This prevents a warpage or the like of a semiconductor element mounting board 101 and a semiconductor device circuit board 120 and a connection failure between the mounting board side electrode and the circuit board side electrode, to improve connection reliability.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor component is mounted, for example, by flip chip mounting on a circuit forming body, a semiconductor device manufactured by the manufacturing method,
And a circuit board for the semiconductor device.

[0002]

2. Description of the Related Art In recent years, devices such as portable information devices have been required to be smaller and lighter. As a method for realizing this, a chip size package (CSP), which is a semiconductor component without leads, is used. A conventional bonding method for bonding such a CSP onto a circuit board will be described below with reference to the drawings. First, as shown in FIG. 16, the metal mask 21 is mounted on the circuit board 12 by aligning the electrodes 13 of the circuit board 12 with the through holes 21 a of the metal mask 21. Then, by squeezing the metal mask 21 with a squeegee 31, cream solder 41 is printed on the electrodes 13 of the circuit board 12 through the through holes 21a as shown in FIG. Next, FIG.
As shown in FIG.
The CSP 15 is mounted on the circuit board 12 with the electrode 14 facing the electrode 13 on the circuit board 12 and aligned. Thereby, the cream solder 41 on the electrode 13 of the circuit board 12 and the electrode 14 of the CSP 15 come into contact with each other. Next, the semiconductor device 16 manufactured as described above is heated up to 220 ° C.
Is heated to about 230 ° C. to melt the cream solder 41, and the electrode 13 of the circuit board 12 and the electrode 1 of the CSP 15
And 4 are joined by solder to make an electrical connection.

[0003]

As described above, in order to join the electrode 13 of the circuit board 12 and the electrode 14 of the CSP 15, the semiconductor device 16 has been conventionally heated at 230 ° C.
The solder is melted by heating at 00 ° C. or higher for 30 seconds. However, if the circuit board 12 and the CSP 15 warp when the temperature is lowered from a high temperature after the heating, the gap between the electrodes 13 and 14 changes because the solder is in a molten state. Therefore, when the amount of warpage is large, as shown in FIG. 19, an open failure in which conduction between the electrode 13 and the electrode 14 cannot be obtained may be caused, which causes a reduction in bonding reliability. Circuit board 1
There is also a problem that a thermal expansion is generated at a joint between the electrode 13 and the electrode 14 due to a difference in thermal expansion coefficient between the CSP 15 and the CSP 15, and a crack is formed at the joint. The present invention has been made in order to solve such a problem, and has improved a bonding reliability between a semiconductor component and a circuit forming body, a semiconductor device, a method of manufacturing the semiconductor device, and a semiconductor device. It is an object to provide a circuit board.

[0004]

In order to achieve the above object, the present invention is configured as follows. That is, the semiconductor device according to the first aspect of the present invention includes a mounting substrate-side electrode of a semiconductor element mounting substrate on which a semiconductor element is mounted, and a semiconductor device circuit board disposed to face the semiconductor element mounting substrate. A semiconductor device formed by opposing a circuit board side electrode and bonding via a solder, wherein the heating temperature at the time of bonding the mounting board side electrode and the circuit board side electrode via the solder is Insulating thermosetting resin material that cures at a low preheating temperature is also applied, and a dedicated application area that suppresses the spread of the thermosetting resin material after application is mounted on the mounting substrate-side electrode. The electrode is formed on at least one of the substrate-side electrode forming surface and the circuit-board-side electrode forming surface on which the circuit-board-side electrode is formed.

[0005] The coating-only area may be arranged at a central portion or a peripheral portion of the mounting substrate-side electrode formation surface and the circuit board-side electrode formation surface.

The coating-only area may be a land of wiring formed on the mounting-substrate-side electrode formation surface and the circuit-board-side electrode formation surface.

[0007] A plurality of the application-dedicated regions may be arranged on the mounting-substrate-side electrode formation surface and the circuit-board-side electrode formation surface.

[0008] The coating-only area may have a square or circular shape.

The dedicated application region may be surrounded by wiring on the mounting substrate-side electrode formation surface and the circuit board-side electrode formation surface.

Further, a circuit board for a semiconductor device according to a second aspect of the present invention has a circuit board side electrode arranged opposite to a mounting board side electrode of a semiconductor element mounting board on which a semiconductor element is mounted, A circuit board for a semiconductor device, wherein the circuit board-side electrode is bonded to the mounting-substrate-side electrode via solder and is disposed opposite to the semiconductor-element-mounting substrate; And an insulating thermosetting resin material that is cured at a preheating temperature lower than the main heating temperature at the time of joining the substrate and the circuit board side electrode via the solder is applied, and the thermosetting resin material after application is applied. A coating-only area for suppressing the spread of the circuit board-side electrode is provided on the circuit board-side electrode formation surface on which the circuit board-side electrode is formed.

Further, in the method of manufacturing a semiconductor device according to a third aspect of the present invention, there is provided a semiconductor device mounting substrate on which a semiconductor element is mounted. An insulating thermosetting resin material is applied to an application-only area formed on at least one of the circuit board side electrode formation surfaces on which the circuit board side electrodes of the semiconductor device circuit board arranged opposite to the circuit board are formed. After the application of the insulating thermosetting resin material, when the mounting substrate side electrode and the circuit board side electrode are joined via solder, the insulating thermosetting is performed at a preheating temperature lower than the main heating temperature. The mold resin material is cured by heating, and after the insulating thermosetting resin material is cured, the main heating is performed to melt the solder between the mounting board side electrode and the circuit board side electrode, thereby mounting the mold. Substrate side electrode and the above circuit Bonding the plate-side electrode, characterized in that.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device, a method of manufacturing the semiconductor device, and a circuit board in the semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals. Further, the semiconductor device according to the present embodiment employs, as an example, a structure in which a semiconductor component to which a semiconductor element is attached is mounted on a circuit forming body, similarly to the above-described conventional semiconductor device. In this embodiment, a CSP (chip size package) is taken as an example of the semiconductor component, and FIGS. 13 to 15 show examples of the CSP. Further, the above-mentioned circuit-formed body includes a circuit board such as a resin board, a paper-phenol board, a ceramic board, a glass epoxy (glass epoxy) board, a film board, a circuit board such as a single-layer board or a multilayer board, a component, and a housing. Or an object on which a circuit is formed, such as a frame. In the present embodiment, a circuit board for a semiconductor device is taken as an example of the circuit forming body.

A CSP 108 shown in FIG. 13 includes an electrode 104 of a semiconductor element 103 mounted on a semiconductor element mounting surface 101a of a semiconductor element mounting substrate 101, and a connection electrode 102 formed on the semiconductor element mounting surface 101a. Are electrically connected to each other by a gold wire 105, and the mounting substrate-side electrode 107 formed on the opposing surface 101b opposing the semiconductor element mounting surface 101a, and the connection electrode 1
02 is electrically connected. The facing surface 10
1b corresponds to the mounting substrate-side electrode forming surface. Also, the semiconductor element 103 mounted on the semiconductor element mounting surface 101a
Are sealed with an insulating thermosetting resin 106.
The CSP 109 illustrated in FIG. 14 directly joins the electrode 104 of the semiconductor element 103 and the connection electrode 102,
That is, the semiconductor element 103 is flip-chip mounted on the semiconductor element mounting substrate 101. The gap between the semiconductor element 103 and the semiconductor element mounting surface 101a is sealed with a resin material. CSP1 shown in FIG.
Reference numeral 10 denotes a type called a so-called real CSP, in which a polyimide layer 112 is laminated on the semiconductor element 103, and the mounting substrate side electrode 107 formed on the polyimide layer 112 and the electrode 104 of the semiconductor element 103 are formed by polyimide. They are electrically connected by the copper wiring 111 in the layer 112. Therefore, in the CSP 110, the polyimide layer 112 corresponds to the semiconductor element mounting substrate 101.

The semiconductor device according to the present embodiment will be described. As shown in FIG. 1, a semiconductor device 1 of the present embodiment
70 is the CSP 108 to 110 (typically, CSP 1
08 may be taken as an example). The mounting substrate side electrode 10 of the semiconductor element mounting substrate 101 provided in any one of
7 and a circuit board-side electrode 12 of a circuit board 120 for a semiconductor device, which is disposed to face the semiconductor element mounting board 101.
The semiconductor device mounting substrate 101 and the semiconductor device circuit substrate 120 are fixed with an insulating thermosetting resin material 140. The thermosetting resin material 140 may be an epoxy resin, a silicone resin, or the like, and may be any insulating resin material that can be cured, such as a thermosetting resin material or an ultraviolet curable resin. is there. Thermosetting resin material 1
40 has a thickness of, for example, 50 μm to 1 mm and φ0.5 to φ
For example, it may be a sheet having a dimension of 5 mm.

The thermosetting resin material 140 is provided on the circuit board side electrode 12 of the semiconductor device circuit board 120.
1 on the electrode forming surface 120a and the mounting substrate side electrode 1 on the semiconductor element mounting substrate 101.
07 is applied to at least one of the above-mentioned opposing surfaces 101b on an application-only area 141 provided independently. 2 and 3 show the circuit board 1 for a semiconductor device.
The figure shows a case where a coating-only area 141 is provided on the electrode forming surface 120a of No. 20. After the application of the thermosetting resin material 140, the thermosetting resin material 1
Reference numeral 40 denotes a region that suppresses outward spreading beyond the coating-only region 141, and is made of the same material as the wiring electrodes formed in the process of forming the wiring electrodes on each substrate, such as copper or gold. Alternatively, it is formed of a resist material or a silk material.
As shown in FIG. 2, the formation area of the application-only area 141 is, for example, a central portion 120 b of the semiconductor device circuit board 120 and the semiconductor element mounting board 101, and interferes with the circuit board side electrode 121 and the wiring 122. Not a place. As described above, since the coating-only area 141 provided on the semiconductor device circuit board 120 is formed of the electrode, the thermosetting resin material 140 is more easily wetted than the base material surface. Can be suppressed.

Next, a method of manufacturing the semiconductor device 170 will be described with reference to FIGS. First step 1
As shown in FIG. 6, a cream solder 130 is applied on the circuit board-side electrode 121 of the semiconductor device circuit board 120 using a metal mask as in the related art.
Note that, instead of the cream solder 130, a conductive adhesive may be applied. In the next step 2, as shown in FIG. 7, an insulating thermosetting resin material 140 is supplied onto the coating-only area 141 using a dispenser 190 or the like. The supplied thermosetting resin material 140 spreads so as to cover the entire area of the application-only area 141. The operation of the dispenser 190 and the like is controlled by the control device 191. In the next step 3, as shown in FIG. 8, the semiconductor element mounting substrate 101 is attached to the circuit board side electrode 121.
The mounting substrate-side electrode 107 is positioned and electrically connected with the cream solder 130 or a conductive adhesive, and the thermosetting resin material 140 is used to connect the semiconductor device circuit board 120 and the semiconductor element. Mounting substrate 101
Adhesion with In the next step 4, the bonded semiconductor device circuit board 120 produced in step 3 is bonded.
Then, the substrate 101 for mounting a semiconductor element is carried into a reflow oven or the like or a curing oven or the like, and is finally heated to a temperature at which the solder in the cream solder 130 melts or a main heating temperature at which the conductive adhesive is cured. The main heating temperature at which the solder melts is at most about 220 ° C. to 230 ° C., and the main heating temperature at which the conductive adhesive cures is about 150 ° C.

On the other hand, the preheating temperature which is the curing temperature of the thermosetting resin material 140 is 150 ° C., which is lower than the main heating temperature. Accordingly, the cream solder 13 may be used as in the case of the highest temperature in the reflow operation or the subsequent cooling.
At the main heating temperature at which 0 melts or the conductive adhesive is cured, the thermosetting resin material 140 has been completely cured, and the semiconductor device circuit board 120 and the semiconductor element mounting board 101 are fixed. It is in the state that was done. Accordingly, even when the cream solder 130 is in a molten state and the gap of the joint cannot be kept constant, the thermosetting resin material 140
CSP108 ~ 11
0, the warpage of the semiconductor device circuit board 120 can be suppressed. Therefore, it is possible to prevent cracks and poor electrical connection from occurring at the joint portions between the mounting substrate-side electrodes 107 in the CSPs 108 to 110 and the circuit board-side electrodes 121 of the semiconductor device circuit board 120. Therefore, the reliability of the connection between the mounting substrate-side electrode 107 and the circuit board-side electrode 121 can be improved as compared with the related art. The semiconductor device 170 is completed as shown in FIG. 9 by melting and solidifying the cream solder 130 or curing the conductive adhesive and curing the thermosetting resin material 140. The entire area of the application-only area 141 is formed of the same material as that of the wiring electrodes, or a resist material or a silk material, and the thermosetting resin material 140 is applied over the entire area. ,
The spread of the thermosetting resin material 140 can be suppressed. For example, since the entire region of the application-only region 141 is formed of copper, the thermosetting resin material 140 spreads along the copper, so that the expansion of the thermosetting resin material 140 to regions other than the application-only region 141 is increased. Can be prevented. Also, as described below,
By surrounding the periphery of the application region of the thermosetting resin material 140 with, for example, copper, it is possible to prevent the thermosetting resin material 140 from spreading beyond the surrounding.

In the above-described semiconductor device 170, as shown in FIG. 2, a coating-only area 141 is formed at one position of the central portion 120b. However, as in the case of the semiconductor device 171 shown in FIG. 4, a plurality of application-only regions 141 can be formed in the central portion 120b by using the wiring 122. As described above, the plurality of application-only areas 14
1 and each of these is provided with the thermosetting resin material 14.
0 is applied and the semiconductor element mounting substrate 101 and the semiconductor device circuit board 120 are joined to each other, so that the stress acting on the thermosetting resin material 140 after joining is dispersed to each thermosetting resin material 140. Can be done. Therefore,
The semiconductor element mounting substrate 101, that is, the semiconductor element 103
Can be reduced.

Further, as in a semiconductor device 172 shown in FIG. 5, a peripheral portion 120c of at least one of the semiconductor device circuit board 120 and the semiconductor element mounting board 101 is provided.
In particular, the coating-only area 141 can be formed at each of the four corners by using, for example, a wiring, a resist, or the like formed on the substrate, one or more each. By providing the coating-only regions 141 at the peripheral portion 120c of the substrate, particularly at the four corners, the CSPs 108 to 11 where the most stress acts are provided.
The stress can be dispersed at the four corners corresponding to the zero angle, and the stress acting on the semiconductor element mounting substrate 101, that is, the semiconductor element 103 can be reduced. In addition, the application-only area 141 is connected to the central
b, the circuit board 1 for a semiconductor device
Since the substrate 20 is supported in a wider range, the warpage of the semiconductor device circuit board 120 can be suppressed.

Further, the semiconductor devices 170 to 172
In FIG. 10, a liquid thermosetting resin material 180 is injected into a gap between the semiconductor element mounting board 101 and the semiconductor device circuit board 120, and is cured.
The mounting board side electrode 107 and the circuit board side electrode 12
The periphery of the joint with the first member may be sealed. Thereby, the semiconductor element mounting substrate 101 and the semiconductor device circuit substrate 120
, In particular, the moisture resistance in the vicinity of the joint, and the heat resistance can be improved.

When the semiconductor device 170 of the semiconductor devices 170 to 172 is taken as an example, as shown in FIG. 2, the planar shape of the application-only region 141 is circular. However, the shape is not particularly limited, and may be, for example, an ellipse, a diamond, or the like, as shown in FIG. With such a shape, the CSPs 108 to 110 have a shape such as an ellipse or a diamond that can be regarded as a streamlined shape with respect to one side surface 115 of the CSPs 108 to 110 to which the liquid thermosetting resin material 180 is applied. When the liquid thermosetting resin material 180 enters the gap with the semiconductor device circuit board 120 by capillary action, for example, in the direction of arrow 116, the liquid thermosetting resin material 180 extends along the application-only area 142 provided at the center of the CSPs 108 to 110. Flow, coating only area 1
Since no stagnation portion of the flow, that is, a portion where there is no flow, does not occur at the rear portion of 41, and no bubble is generated, a highly reliable bonding can be obtained.

Further, the shape of the above-mentioned coating-only area is shown in FIG.
For example, a donut shape as shown in FIG.
That is, in the application-only region 143, only the peripheral portion 143b is formed of the wiring material, and the central portion 143b is formed.
The thermosetting resin material 140 is applied to a. Note that the height of the peripheral portion 143b may be the same as the height of the wiring on the substrate. According to this configuration, since the thermosetting resin material 140 spreads along the wiring material as described above, the peripheral portion 1
43b is a barrier, and the applied thermosetting resin material 140
Does not leak out from the central portion 143a due to the passage of time or the influence of heat, and does not contaminate the electrode 121 of the joint disposed around the coating-only area 143.
Therefore, more reliable bonding can be performed.

[0023]

As described above in detail, according to the semiconductor device of the first aspect, the circuit board for a semiconductor device of the second aspect, and the method of manufacturing a semiconductor device of the third aspect of the present invention, a coating-only area is provided. A thermosetting resin material that cures at a preheating temperature lower than the main heating temperature when the mounting substrate-side electrode and the circuit board-side electrode are joined via solder is applied to the dedicated application region. Therefore, when the solder is in a molten state, the thermosetting resin material is already cured, and the semiconductor device mounting board provided with the mounting board side electrode and the semiconductor device circuit board provided with the circuit board side electrode are provided. Is fixed by the thermosetting resin material. Therefore, it is possible to suppress the occurrence of warpage or the like of the semiconductor element mounting substrate and the semiconductor device circuit substrate, and to cause cracks or the like at the bonding portion between the mounting substrate side electrode and the circuit substrate side electrode. The occurrence of defects can be prevented, and the joint reliability of the joint can be improved.

In addition, the coating-dedicated area is arranged on the mounting-substrate-side electrode forming surface on which the mounting-substrate-side electrode is formed, and on the circuit-board-side electrode forming surface on which the circuit-board-side electrode is formed, particularly at the peripheral edge. By applying the thermosetting resin material, the stress acting on the semiconductor element mounting substrate and the semiconductor device circuit board can be dispersed, and the stress acting on the semiconductor element can be reduced. Further, the stress can be dispersed by providing a plurality of application-dedicated regions and applying the thermosetting resin material.

Further, by using the land of the wiring for the coating-only area, there is no need to provide a step for forming the coating-only area, which is advantageous in the manufacturing process.

[0026] Further, by forming the application-only area in a circular or square shape and applying the thermosetting resin material, a sealing resin is provided in a gap between the semiconductor element mounting substrate and the semiconductor device circuit substrate. When entering, stagnation does not occur at the rear of the thermosetting resin material, and generation of bubbles can be suppressed. Therefore, higher joining reliability can be obtained.

Further, by forming the coating-only area in a shape in which only the peripheral portion is surrounded by the wiring material, it is possible to prevent the thermosetting resin material from leaking out from the peripheral portion. Therefore, it is possible to prevent the thermosetting resin material from flowing and spreading to the electrode at the joint portion and to contaminate it, and it is possible to further improve connection reliability.

[Brief description of the drawings]

FIG. 1 is a side view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view of a circuit board for a semiconductor device constituting the semiconductor device shown in FIG. 1;

FIG. 3 is a side view of the semiconductor device circuit board shown in FIG. 2;

FIG. 4 is a side view of a modification of the semiconductor device shown in FIG. 1;

FIG. 5 is a side view of another modification of the semiconductor device shown in FIG. 1;

FIG. 6 is a diagram for explaining the method for manufacturing the semiconductor device shown in FIG.

FIG. 7 is a view illustrating a method of manufacturing the semiconductor device illustrated in FIG. 1;

FIG. 8 is a view illustrating a method of manufacturing the semiconductor device illustrated in FIG. 1;

FIG. 9 is a view illustrating a method of manufacturing the semiconductor device illustrated in FIG. 1;

FIG. 10 is a side view of another modified example of the semiconductor device shown in FIG. 1;

FIG. 11 is a plan view of a modification of the circuit board for a semiconductor device shown in FIG. 2;

FIG. 12 is a plan view of still another modification of the circuit board for a semiconductor device shown in FIG. 2;

FIG. 13 is a diagram illustrating an example of a form of a CSP.

FIG. 14 is a diagram showing another example of the form of the CSP.

FIG. 15 is a diagram showing still another example of the form of the CSP.

FIG. 16 is a view illustrating a step of manufacturing a conventional semiconductor device.

FIG. 17 is a diagram illustrating a step of manufacturing a conventional semiconductor device.

FIG. 18 is a view illustrating a step of manufacturing a conventional semiconductor device.

FIG. 19 is a diagram showing a state in which a contact failure has occurred at a junction in a conventional semiconductor device.

[Explanation of symbols]

101: semiconductor element mounting substrate, 101b: mounting substrate side electrode forming surface, 103: semiconductor element, 107: mounting substrate side electrode, 120: semiconductor device circuit board, 120a ...
Electrode forming surface, 120b central part, 120c peripheral part, 1
21: Circuit board side electrode, 140: Thermosetting resin material, 14
1 ... Area dedicated to application, 170-172 ... Semiconductor device.

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Kojiro Nakamura 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Hiroyuki Otani 1006 Kadoma Kadoma Kadoma City, Osaka Matsushita Electric Industrial Co. Terms (reference) 5E319 AA03 AB05 AB10 AC02 AC04 AC20 BB05 BB11 BB20 CC33 CC61 CC70 CD45 GG11 5F044 LL11 RR18 RR19 5F061 AA01 BA04 CA05 CB02 CB12

Claims (8)

[Claims] An electrode (10) on a mounting substrate side of a semiconductor device mounting substrate (101) on which a semiconductor device (103) is mounted.
7) and a circuit board-side electrode (1) of the semiconductor device circuit board (120) arranged to face the semiconductor element mounting board.
21) is formed by opposing and bonding via a solder, which is lower than the main heating temperature when the mounting substrate side electrode and the circuit board side electrode are bonded via the solder. An application-only area (141) to which an insulating thermosetting resin material (140) that is cured at a preheating temperature is applied and that suppresses the spread of the thermosetting resin material after application is formed by the mounting substrate-side electrode. The mounting substrate-side electrode formation surface (101b) on which is formed the circuit board-side electrode formation surface (1
20a) A semiconductor device formed on at least one of them. 2. The coating-dedicated area is provided at a central portion (1) of the mounting substrate-side electrode formation surface and the circuit board-side electrode formation surface.
2. The semiconductor device according to claim 1, wherein the semiconductor device is arranged on the periphery (120 b). 3. The semiconductor device according to claim 1, wherein the coating-only area is a land of wiring formed on the mounting-substrate-side electrode forming surface and the circuit-board-side electrode forming surface. 4. The semiconductor device according to claim 1, wherein a plurality of the application-dedicated regions are arranged on the mounting-substrate-side electrode formation surface and the circuit-board-side electrode formation surface. 5. The semiconductor device according to claim 1, wherein the dedicated application region has a rectangular shape or a circular shape. 6. The circuit according to claim 1, wherein the coating-only area is surrounded by wiring on the mounting-substrate-side electrode formation surface and the circuit-board-side electrode formation surface. Semiconductor device. 7. A mounting substrate side electrode (10) of a semiconductor device mounting substrate (101) to which a semiconductor device (103) is mounted.
7) a circuit board side electrode (121) arranged opposite to the semiconductor element mounting board, and arranged opposite to the semiconductor element mounting board, and the circuit board side electrode being soldered to the mounting board side electrode; Circuit board for semiconductor device (12
0), wherein an insulating thermosetting resin material that is cured at a preheating temperature lower than the main heating temperature when the mounting substrate side electrode and the circuit board side electrode are joined via the solder. 140) is provided on the circuit board-side electrode formation surface (120a) on which the circuit board-side electrode is formed, and a dedicated application area (141) on which the thermosetting resin material is spread after application is suppressed. A circuit board for a semiconductor device. 8. A mounting substrate side electrode (10) of a semiconductor device mounting substrate (101) on which a semiconductor device (103) is mounted.
7) The mounting substrate-side electrode forming surface (101) on which the
b) and the circuit board side electrode formation surface (120) on which the circuit board side electrode (121) of the semiconductor device circuit board (120) arranged opposite to the semiconductor element mounting board is formed.
a) dedicated application region (14) formed on at least one of
1) An insulating thermosetting resin material (140) is applied, and after the insulating thermosetting resin material is applied, the mounting board side electrode and the circuit board side electrode are joined via solder. When the insulating thermosetting resin material is heated and cured at a preheating temperature lower than the main heating temperature, and after the insulating thermosetting resin material is cured, the main heating is performed and the mounting substrate side electrode and A method of manufacturing a semiconductor device, comprising melting the solder between the circuit board side electrode and joining the mounting board side electrode and the circuit board side electrode.