JP2002187050A - Polishing machine, polishing method of semiconductor wafer, manufacturing method of semiconductor device and manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a polishing machine wherein slurry grinding fluid can be effectively collected in polishing an edge portion of a circular substrate and wherein repair, inspection and the like can be safely conducted. SOLUTION: A drum 120 of the polishing machine 100 includes a polishing member 122 which has a grinding face 122A of a near conical shape in its inner face, and the grinding member 122 is rotatably mounted around a rotary shaft 120R. The polishing machine 100 is equipped with a chuck table 131 which retains a semiconductor wafer 10 while causing it to turn, and with a pushing cylinder 170 which causes the chuck table 131 to move so that an edge portion 11 of the semiconductor wafer 10 be brought into contact with the grinding face 112A at a predetermined angle of θ2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus, a method for polishing a semiconductor wafer, a method for manufacturing a semiconductor device, and a manufacturing apparatus, and more particularly to a method for polishing an edge portion of a circular substrate such as a semiconductor wafer, an optical lens, and a magnetic disk substrate. The present invention relates to a polishing apparatus and the like to be used.

[0002]

2. Description of the Related Art Conventionally, semiconductor wafers, optical lenses,
There is known a technique for polishing an edge portion of a circular substrate such as a magnetic disk substrate with a desired flatness. In particular, for a semiconductor wafer, the front surface (device forming surface), the back surface, and the edge portion are polished before shipping, and the semiconductor wafer after polishing is used in a semiconductor device manufacturing process.
A device structure including a semiconductor film, a metal film, and the like is formed on the device formation surface.

In this case, the semiconductor wafer on which the semiconductor film and the metal film are formed is subjected to chemical mechanical polishing (hereinafter, referred to as “CMP polishing”) for planarization after film formation, and thereafter. Then, the substances (the various substances constituting the semiconductor film and the metal film) attached to the entire semiconductor wafer (the front surface, the rear surface, and the edge portion) are removed by cleaning.

[0004]

Incidentally, it is known that, in recent years, in semiconductor devices of which high density has been achieved, a small amount of unnecessary substances which are left undesirably affect device characteristics. However, simply cleaning the entire semiconductor wafer as described above removes unnecessary substances attached to the semiconductor wafer.
It has been found that it cannot be sufficiently removed to such an extent that the device characteristics are not affected. In particular, unnecessary substances are likely to remain on the edges even after cleaning. This is because the surface of the edge portion of the semiconductor wafer has more irregularities than the front surface and the back surface, so that unnecessary substances easily enter, and the unnecessary substances attached to the irregularities are difficult to remove even by washing. I have.

Therefore, the present inventors have conceived a method of manufacturing a semiconductor device in which an edge portion to which an unnecessary substance can adhere is polished in a device manufacturing process after a film forming process or the like is completed. Here, a polishing apparatus for polishing an edge portion is generally known, for example, from JP-A-9-85600.

As shown in FIG. 13, a known polishing apparatus 50 includes a drum 51 rotated by a motor 55 about a rotation shaft 51R, a polishing member 52 attached to the drum 51, an inclined table 56, and a semiconductor wafer 10. It has a chuck table 57 for suction. When the edge portion 11 of the semiconductor wafer 10 is polished, the inclined table 56 is inclined as shown by a broken line, and the semiconductor wafer 10 adsorbed on the chuck table 57 is attached to the polishing member 52 of the drum 51 at a predetermined angle. It is pressed. At this time, the slurry polishing liquid is supplied from the nozzle 54 to the contact portion between the edge portion 11 and the polishing member 52. In the figure, 58 is an upper cover that covers the entire polishing apparatus 50.

Since the slurry polishing liquid contains a chemical substance harmful to the human body, it is necessary to prevent the slurry polishing liquid from scattering in the polishing apparatus 50. The drum 51 has a cover 53 to prevent scattering.
Since the cover 53 is provided with a window 53A for bringing the edge 11 into contact with the polishing member 52, the slurry polishing liquid scatters from the window 53A to the outside.

The scattered slurry polishing liquid is supplied to a polishing apparatus 5
It adheres to the inside of 0 and causes contamination. Also, if the slurry dries over time, the components of the slurry polishing liquid float in the atmosphere in the polishing apparatus 50 and may contaminate the semiconductor wafer. Also, in the case where the slurry polishing liquid is collected and discarded / reused, it is difficult to achieve high recovery efficiency in the conventional polishing apparatus 50 because the scattered slurry polishing liquid adheres to the inner wall surface and the like. Met.

[0009] Further, when performing a repair or inspection work of the polishing apparatus, if the harmful slurry polishing liquid adheres to the inside of the apparatus, the operation cannot be performed safely. The present invention has been made in view of such circumstances, and a first object of the present invention is to provide a polishing apparatus that prevents a slurry polishing liquid from splashing inside when polishing an edge portion of a substrate.

A second object of the present invention is to provide a method for manufacturing a semiconductor device, comprising: removing a surplus substance adhering to an edge portion of a semiconductor wafer to improve a yield; To provide a manufacturing method and a manufacturing apparatus.

[0011]

According to another aspect of the present invention, there is provided a polishing apparatus comprising: a polishing member having a substantially conical polishing surface on an inner surface thereof; A rotation unit configured to be rotatable about an axis of the substrate, a holding unit that holds the substrate while rotating the substrate, and a movement that moves the holding unit such that an edge of the substrate comes into contact with the polishing surface at a predetermined angle. And a part.

According to a second aspect of the present invention, in the polishing apparatus according to the first aspect, the polishing member includes a first polishing section and a second polishing section, and the first polishing section includes a first polishing section and a second polishing section. The polishing surface has a substantially conical shape spreading downward with respect to the axial direction of the rotating portion, and the polishing surface of the second polishing portion has a substantially conical shape spreading upward with respect to the axial direction of the rotating portion, The moving unit is
The holding unit is moved so that an edge portion of the substrate selectively comes into contact with a polishing surface of the first polishing unit and a polishing surface of the second polishing unit.

According to a third aspect of the present invention, in the polishing apparatus according to the first or second aspect, a polishing liquid supply unit for supplying a polishing liquid to the polishing member and a substantially conical space are provided downward. And a polishing liquid recovery unit for covering the polishing liquid. or,
According to a fourth aspect of the present invention, in the polishing apparatus according to any one of the first to third aspects, the polishing member has a polished surface having a tilt at least at a position where the substrate abuts. It is arranged so as to be at an angle of 30 to 70 degrees (preferably 60 degrees) with respect to the rotation axis of the rotating section.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein polishing of an edge portion of a semiconductor wafer and CMP polishing of a device forming surface are continuously performed. The method for polishing a semiconductor wafer according to claim 6 includes a procedure for holding the semiconductor wafer while rotating the same, and a polishing method having a substantially conical polishing surface on the inner surface and rotating about the axis of the substantially conical polishing surface. Pressing the edge of the semiconductor wafer against the polished surface of the member at a predetermined angle.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising continuously performing CMP polishing of a device forming surface of a semiconductor wafer and polishing of an edge portion by the semiconductor wafer polishing method of the sixth aspect. It is.

According to another aspect of the present invention, a first polishing unit for polishing an edge portion of a semiconductor wafer and a second polishing unit for polishing a device forming surface of the semiconductor wafer are provided.
And a cleaning chamber for performing a cleaning process on the semiconductor wafer polished by the second polishing unit are provided continuously.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a sectional view showing a polishing apparatus 100 according to the present embodiment. As shown in FIG.
Is composed of a drum (rotating section) 120, an inclined table 130, an upper cover 140, a polishing liquid collecting tab (polishing liquid collecting section) 150, a drum rotating section 160, a pressing cylinder 170, and the like. The drum 120 includes the bearing 12
1, the frame 102 fixed to the worktable 101
And is rotatably mounted.

A polishing surface 122A is provided inside the drum 120.
A polishing member 122 having a substantially conical shape extending downward is attached. The polishing member 122 is made of a foam-type polishing pad (for example, SUBA4 manufactured by Rodel-Nitta).
00 (product name)). A pulley 163 is provided on the outer periphery of the drum 120.
A pulley 162 attached to the drum rotation motor 161 is suspended by a drive belt 164.
By driving the drive belt 164 by the drum rotation motor 161, the drum 120 is rotated by the shaft (rotation shaft 120) of the polishing surface 122 </ b> A formed in a substantially conical shape spreading downward.
R). A labyrinth 123 is attached to the drum 120 so as to cover a gap between the drum 120 and the frame 102.

The inclined table 130 is provided inside the drum 120. The tilting table 130 includes a chuck table (holding unit) 131 that holds the semiconductor wafer (substrate) 10 while rotating the semiconductor wafer (substrate) 10, an arm unit 135 to which the chuck table 131 is attached, a table rotation motor 132,
An angle adjustment unit 133 for adjusting the angle of the arm unit 135 and a vertical movement adjustment unit 134 are provided. The angle adjustment unit 133 holds the semiconductor wafer 10 suction-held on the chuck table 131 at a predetermined angle (θ
2), it can be inclined.

The pressing cylinder (moving portion) 170 is so arranged that the semiconductor wafer 10 adsorbed on the chuck table 131 is pressed against the polishing surface 122A with a constant force.
The entire inclined table 130 is moved. In the polishing apparatus 100 configured as above, the upper portion of the drum 120 is opened (upper open end 120A), and the slurry (polishing liquid supply unit) 182 supplies the slurry polishing liquid from here to the semiconductor wafer 10 ( 250 ml / min). This nozzle 1
Reference numeral 82 is connected to the polishing liquid supply tube 181 and is directed in an arbitrary direction by a flexible structure. Here, it is directed to the edge 11 of the semiconductor wafer 10 to be polished. The upper open end 120A of the drum 120 is
Covered by

In the polishing apparatus 100, the lower portion of the drum 120 is open (lower open end 120B). A drum skirt 126 is connected to the lower open end 120B, and a polishing liquid collecting tab 150 is provided further below the work table 101 so as to cover the entire lower open end 120B (and the drum skirt 126). Have been. The polishing liquid collecting tabs 150 are arranged at regular intervals so as not to come into contact with the rotating drum 120, and a drain 191 and an intake pipe 192 are provided at the bottom thereof. Here, the suction pipe 192 is provided for sucking the mist slurry polishing liquid inside the drum 120 (in the atmosphere) by a decompression pump (not shown) or the like. Since the slurry polishing liquid supplied from the nozzle 182 toward the edge portion 11 is sucked from the suction pipe 192, the slurry polishing liquid does not scatter upward from the upper open end 120A.

Next, the drum 1 constituting the polishing apparatus 100
The relationship among 20, the inclined table 130, and the drum rotating unit 160 will be described with reference to FIGS. Drum 120
The inner polishing surface 122A is inclined at a predetermined inclination angle θ1 (30 degrees to 70 degrees) with respect to the rotating shaft 120R at a position where the polishing surface 122A comes into contact with the edge portion 11 (a portion indicated by a broken circle S in FIG. 2) (see FIG. 2). 3: optimum value is about 60 degrees).

At the time of polishing, the drum 120 rotates at a high speed (for example, 1000 rpm) in a direction indicated by an arrow X in FIG. 2 by the rotation of the drum rotation motor 161.
On the other hand, the arm portion 135 of the semiconductor wafer 10 sucked on the chuck table 131 is inclined so as to have a predetermined angle θ2 with respect to the polishing surface 122A, and in this state, the table rotating motor 132 (FIG. 1) It rotates at a low speed in the direction indicated by the middle arrow Y (0.5 to 2 rpm).

The semiconductor wafer 10 thus rotated is moved by the pressing cylinder 170 together with the inclined table 130 in the direction indicated by the arrow Z in the figure, and the edge 11 of the semiconductor wafer 10 is formed on the polishing surface 122A at a predetermined angle θ2. It is pressed and edge polishing is performed. Note that the chuck table 131 can be moved up and down by the up-down movement mechanism 133 of the inclined table 130, so that the contact portion between the edge portion 11 and the polishing surface 122 A can be moved to perform polishing using the entire polishing member 122. Has become.

As shown in FIG. 3, when the polishing surface 122A is inclined at a predetermined inclination angle θ1 with respect to the rotation axis 120R, the slurry polishing liquid adhering to the polishing surface 122A is subjected to the centrifugal force F1 and the polishing surface 122A. F3 with drag F2 from
As a result, it is guided downward along the polishing surface 122A. As a result, the slurry polishing liquid can be efficiently supplied to the polishing liquid collection tab 1.
50 can be collected.

Here, edge polishing of the semiconductor wafer 10 will be described with reference to FIGS. In this embodiment, three surfaces (lower bevel 11B, middle surface 11B) of edge portion 11 of semiconductor wafer 10 are polished by polishing apparatus 100.
C, polishing of the upper bevel 11A) is performed.

Here, the upper bevel 11A and the lower bevel 1
1B indicates that the angles (angles with respect to the surface of the semiconductor wafer 10) θa and θb are predetermined angles (for example, θa = θb,
(22 degrees or 37 degrees). The edge polishing of the semiconductor wafer 10 is first performed by the method shown in FIG.
As shown in (a), the back surface 10B side of the semiconductor wafer 10 is attracted to the chuck table 131 (the device forming surface 10A is up), and is pressed against the polishing surface 122A rotating at a high speed while rotating the chuck table 131 at a low speed. In this case, the angle θ2 with respect to the polished surface 122A of the semiconductor wafer 10 is determined so that the angle θa of the upper bevel 11A becomes a desired angle. For example, when the angle θa is 22
When the angle is degrees, the angle θ2 is 22 degrees, and when the angle θa is 37 degrees, the angle θ2 is 37 degrees.

When the polishing of the upper bevel 11A is completed, the polishing of the inner surface 11C is performed. This polishing is performed at an angle θ between the semiconductor wafer 10 and the polishing surface 122A.
2 is made approximately 90 degrees. When the polishing of the middle surface 11C is completed, the semiconductor wafer 10 is turned over, the device forming surface 10A is attracted to the chuck table 131, and the lower bevel 11B is polished. In this case, the angle θ2 with respect to the polished surface 122A of the semiconductor wafer 10 is determined so that the angle θb of the lower bevel 11B has the above value. Also in this case, similarly to the above, the angle θb
Is 22 degrees, the angle θ2 is 22 degrees, and the angle θb is 37 degrees.
In the case of degrees, the angle θ2 is 37 degrees.

Next, the rotation axis 120R of the polishing surface 122A
Will be described with reference to FIG. As described above, the upper bevel 1
The semiconductor wafer 10 is polished to the polished surface 122A so that the angle θa of 1A and the angle θb of the lower bevel 11B become predetermined angles.
Must be inclined so as to be a predetermined angle θ2 (θ2 is 22 degrees when θa is 22 degrees, and 37 degrees when θa is 37 degrees).

On the other hand, the inner diameter of the drum 120 of the polishing apparatus 100 is determined so that the semiconductor wafer 10 can be sufficiently accommodated inside the polishing member 122. preferable. As described above, at the time of edge polishing, the semiconductor wafer 10
It must be tilted so as to form a predetermined angle (for example, θ2 = 22 degrees) with respect to 2A.

Here, consider the case where the inclination angle θ1 of the polishing surface 122A with respect to the rotation axis 120R is small (the inclination is steep) as shown in FIG. 6A. When polishing the upper or lower bevel at a predetermined angle θ2 using this polished surface, the semiconductor wafer 10 must be inclined by an angle θ2 with respect to this polished surface 122A. Here, the inclination angle θ1
Is smaller, the inclination angle of the semiconductor wafer 10 with respect to the rotation axis 120R is smaller (the inclination is steeper).

At this time, when the semiconductor wafer 10 is steeply inclined beyond a certain limit inside the substantially conical polishing surface 122A, the edge portion 11 of the semiconductor wafer 10
Contact with A at two points (x in FIG. 6A) is not preferable. In view of the above, the inclination angle θ1 of the polishing surface 122A is, as shown in FIG. 6B, the diameter of the semiconductor wafer 10 and the polishing position of the substantially conical polishing surface 122A (the contact portion with the edge portion 11). ), The inclination of the semiconductor wafer 10 is determined to be gentle based on the angles θa and θb of the upper bevel 11A and the lower bevel 11B.
In this embodiment, the polished portion of the polishing surface 122A (FIG. 2)
Of the drum 12 having a diameter of 18 inches
Using 0, the inclination angle θ1 of the polished surface 122A is set to 60 degrees so that both the angles θa and θb of the upper bevel 11A and the lower bevel 11B of the 12-inch semiconductor wafer 10 can be edge-polished to 22 degrees. ing. Note that the inclination angle θ
1 is about 30 to 70 degrees in consideration of the diameter of the polished semiconductor wafer 10 and the miniaturization of the polishing apparatus 100, and the angles θa and θb of the upper bevel 11A and the lower bevel 11B. Is preferred.

In providing the polishing member 122 in a substantially conical shape on the inner wall of the drum 120, for example, a polishing cloth 124 having a shape shown in FIG. 7A is attached to the inner wall of the drum 120 (FIG. 7B )). Here, by making the bonding surface 124A of the polishing cloth 124 be inclined, the drum 1
When the blade 20 rotates in the direction indicated by the arrow in FIG. 7B, the slurry polishing liquid atomized in the drum 120 is guided downward (toward the polishing liquid collection tab 150) by the wind-off effect.

The lower open end 120B of the polishing surface 122A
As shown in FIG. 8, an auxiliary plate 126 provided with a polishing member 125 may be arranged on the side. In the auxiliary plate 126, the polishing surface 125A of the polishing member 125 has a substantially conical shape extending upward with respect to the rotation axis 120R. By providing the polishing member 125, the chuck table 131 can be moved up and down by the vertical movement mechanism 133 in the direction of the arrow in FIG. 8 (without turning the semiconductor wafer 10 upside down). Bevel 11
B edge polishing can be performed. The middle surface 11C is performed in a state where the chuck table 131 is inclined such that the semiconductor wafer 10 is perpendicular to the polishing surface 122A or 125A.

In this case, the outer peripheral portion 1 of the auxiliary plate 126
As shown in FIG. 9A, a number of openings 126C for guiding the slurry polishing liquid to the polishing liquid recovery tab 150 below the slurry polishing liquid are provided in 26B. This opening 126
The cross-sectional shape of C is oblique as shown in FIG. 9B, and when the drum 120 rotates in the direction of the arrow in the figure,
The wind effect of the cross section of the opening 126C allows the drum 120
The mist slurry polishing liquid in the lower part (polishing liquid recovery tab 1)
50) and is efficiently collected.

The polishing surface 125A of the polishing member 125 is also
As shown in FIG. 8, since the slurry is inclined at an angle θ4 with respect to the rotation axis 120R, the slurry polishing liquid attached to the polishing surface 125A is directed toward the outer peripheral portion 126B of the auxiliary plate 126 by the combined force of the centrifugal force and the drag. Led. As a result, the slurry polishing liquid is efficiently collected on the polishing liquid collection tab 150 side from the opening 126C.

As described above, in the polishing apparatus 100 of the first embodiment, the slurry polishing liquid supplied during edge polishing is collected on the polishing liquid collection tab 150 without scattering to the outside of the drum 120. The slurry polishing liquid can be efficiently collected, discarded and reused without polluting the polishing apparatus 100 or the semiconductor wafer 10 with the slurry polishing liquid. In addition, since the slurry polishing liquid does not scatter outside the drum 120, repair and inspection work of the polishing apparatus 100 is facilitated.

(Second Embodiment) Next, a second embodiment of the present invention will be described.
The polishing apparatus 200 according to the embodiment will be described with reference to FIG. In the second embodiment, the polishing member 21
0 is constituted by the first polishing unit 220 and the second polishing unit 230.

Here, the first polishing section 220
0A has a substantially conical shape spreading downward with respect to the rotation shaft 210R. In addition, the second polishing section 230 includes a polishing surface 230.
A has a substantially conical shape extending upward with respect to the rotation shaft 210R. Further, the drum 210 is a drum rotating unit 2 having the same mechanism as the drum rotating unit 160 of the first embodiment.
Due to 60, it is rotated at high speed.

In this polishing apparatus 200, the first polishing section 2
When the edge portion 11 of the semiconductor wafer 10 is polished by 20, the slurry polishing liquid is transferred to the slurry collecting section 290 via a slurry collecting tab 250 arranged below the drum 210 as shown by an arrow X in the figure. Be guided.
On the other hand, when the edge portion 11 of the semiconductor wafer 10 is polished by the second polishing portion 230, the slurry polishing liquid passes through the upper recovery portion 240 disposed above the drum 220 as shown by the arrow Y. Slurry recovery unit 290
It is led to.

At this time, the polishing surfaces 220A and 230A
Since the inclination angles θ11 and θ21 with respect to the rotation axis 210R have predetermined values (for example, 60 degrees), the polishing surface 2
The slurry polishing liquid adhering to 20A and 230A is guided downward on polishing surface 220A and upward on polishing surface 230A by the combined force of centrifugal force and the reaction force from polishing surfaces 220A and 230A. As a result, the slurry polishing liquid can be efficiently recovered to the slurry recovery section 290 via the upper recovery section 240 and the polishing liquid recovery tab 250. The other configuration such as the chuck table of the polishing apparatus 200 is the same as that of the polishing apparatus 100 of the first embodiment described above, and a detailed description thereof will be omitted.

Also in the polishing apparatus 200 of the second embodiment, the slurry polishing liquid supplied at the time of edge polishing does not scatter to the outside of the drum 210, and the slurry recovery unit 2
90, the slurry polishing liquid is supplied to the polishing apparatus 2
The slurry polishing liquid can be efficiently collected, discarded, and reused without polluting the semiconductor wafer 00 and without polluting the semiconductor wafer. Further, since the slurry polishing liquid does not scatter on the outside of the drum 210, repair and inspection work of the polishing apparatus 200 is facilitated.

In the first and second embodiments described above, the polishing apparatuses 100 and 200 for polishing the edge portion 11 of the semiconductor wafer 10 have been described. Of course, the present invention can be applied to polishing of an edge portion of a circular substrate. (Third Embodiment) Next, a third embodiment of the present invention will be described with reference to FIGS.

In the third embodiment, in the manufacturing process of the semiconductor device, in particular, in order to clean / remove the substance adhered to the edge portion 11 of the semiconductor wafer 10, the third embodiment is used. Polishing apparatus 100, 200
Is used. Here, FIG.
0 on the device forming surface 10A (for example,
Aluminum layer formation, implantation of impurities, etc.)
1 shows a semiconductor manufacturing apparatus 500 for removing unnecessary substances remaining on a semiconductor wafer 10. This semiconductor manufacturing apparatus 50
At 0, the edge polishing of the edge portion 11 of the semiconductor wafer 10, the CMP polishing of the device forming surface 10A of the semiconductor wafer 10, and the cleaning of the semiconductor wafer 10 are continuously performed.

That is, in the semiconductor manufacturing apparatus 500, an edge polishing unit (first polishing unit) 510 for polishing the edge portion 11 of the semiconductor wafer 10;
CMP polishing unit (second polishing unit) 520 for polishing device forming surface 10A of semiconductor wafer 10
And are arranged continuously. Thereby, the edge polishing of the edge portion 11 of the semiconductor wafer 10 and the CMP polishing of the device forming surface 10A are continuously performed (without intervening other processes and the transport distance of the semiconductor wafer 10 is minimized). It is possible to do. In this embodiment, a CMP polishing unit 520 is arranged downstream of the edge polishing unit 510 according to the flow (order) of the polishing process on the actual semiconductor wafer 10.

A buffer station 530 communicating with the upstream side of the edge polishing unit 510 and the downstream side of the CMP polishing unit 520 is provided.
The buffer station 530 is provided with a post-cleaning unit (cleaning room) 540. The cleaning unit 540 includes a post-edge cleaning chamber 540A and a post-CMP cleaning chamber 540B.

The semiconductor manufacturing apparatus 50 thus configured
0, first, the semiconductor wafer 1 stored in a cassette (not shown) at the front end of the semiconductor manufacturing apparatus 500
0 is temporarily placed in the buffer station 530 by a transfer robot (not shown), and is then taken into the edge polishing unit 510 by the transfer robot (not shown).

In the edge polishing unit 510, the first edge 11 of the semiconductor wafer 10 taken in
Alternatively, edge polishing using the polishing apparatus 100 or the polishing apparatus 200 described in the second embodiment is performed. When the edge polishing in the edge polishing unit 510 is completed, the semiconductor wafer 10 is transferred by a transfer robot (not shown) to a CMP polishing unit 520 provided continuously to the edge polishing unit 510, and the device forming surface is formed. 10
A is subjected to CMP polishing. Since the CMP polishing of the device forming surface 10A is performed by a known CMP polishing apparatus, a detailed description thereof is omitted.

When the polishing of the device forming surface 10A in the CMP polishing unit 520 is completed, the semiconductor wafer 10 is
The post-cleaning unit 5 is moved by a transfer robot (not shown).
It is transported to the post-edge cleaning chamber 540A. In the post-edge cleaning chamber 540A, post-cleaning is performed to remove slurry and unnecessary substances (metals and the like) attached to the edge portion 11. Thereafter, processing such as scrub cleaning, megasonic cleaning, and ultrasonic cleaning is performed as cleaning.

Next, the semiconductor wafer 10 is transferred to the post-CMP cleaning chamber 540B, where post-cleaning processing (scrub cleaning, megasonic cleaning, etc.) is performed on the device forming surface 10A, and further drying processing (spin drying, etc.) is performed. . The cleaned semiconductor wafer 10 is transported again to the front end by a transport robot (not shown) and stored in a cassette (not shown).

As described above, in the semiconductor device manufacturing process, the semiconductor wafer 10 using the semiconductor manufacturing apparatus 500 is used.
Of the edge portion 11, polishing of the device forming surface 10A,
Further, even in the manufacture of a semiconductor device in which high density is achieved by performing post-cleaning, the semiconductor wafer 10
Unnecessary substances attached to the surface can be sufficiently removed. In particular, when the edge portion 11 is polished (edge polished), the substance adhered and left on this portion does not affect the device formation in the subsequent manufacturing process.

Further, since the edge polishing unit and the CMP polishing unit are integrated, the waste liquid of the slurry polishing liquid used for the CMP polishing can be used for the edge polishing, and the slurry polishing liquid can be effectively used. become. next,
Device forming surface 10A by semiconductor manufacturing apparatus 500
The polishing procedure of the semiconductor device in which the polishing of the edge portion 11 and the polishing of the edge portion 11 are appropriately performed will be described with reference to the flowchart of FIG.

In manufacturing a semiconductor device,
First, in step S200, an oxidation step (step S20) is performed.
From 1), the CVD process (Step S202), the electrode film forming process (Step S203), and the ion implantation process (Step S204), the processing process to be performed next is selected. Then, according to this selection, steps S201 to S201
204 is executed.

In step S201, the device formation surface 10A of the semiconductor wafer 10 is oxidized to form an oxide film.
In step S202, an insulating film or the like is formed on the device formation surface 10A by a CVD method or the like. In step S203, a metal is deposited on the device formation surface 10A to form an electrode film, and in step S204, impurities are ionized on the device formation surface 10A. It is driven.

When the CVD step (step S202) or the electrode film forming step (step S203) is completed, the process proceeds to step S205, where the polishing step (edge polishing / C
It is determined whether or not to perform (MP polishing). When it is determined that the polishing process is to be performed, the process proceeds to step S206, and a damascene process (Damascene Processes) for flattening an oxide film, another insulating film, or the like, or for a semiconductor device surface is performed.
The edge polishing and the CMP polishing by the semiconductor manufacturing apparatus 500 described above are continuously performed on the device forming surface 10A of the wiring layer formation (polishing of the surface metal film) according to s), and then the process proceeds to step S207. .

On the other hand, if it is determined that the polishing step is not performed, step S206 is skipped and step S206 is skipped.
Proceed to 207. In step S207, a photolithography process is performed. In this photolithography process, application of a resist to a semiconductor wafer, baking of a fixed pattern using an exposure device, and development of the exposed resist are performed.

In the next step S208, the metal film or the like of the semiconductor wafer is removed by etching using a developed resist in portions other than the resist, and thereafter, the resist film is stripped. When the processing in step S208 ends, it is determined in step S209 whether or not all desired processing on the semiconductor wafer has ended.

When the result of the determination in step S209 is "N
As long as it is "o", the process returns to step S200 and the above-described series of processes is repeated (formation of a circuit pattern on a semiconductor wafer).
es ", the program ends.

[0060]

According to the polishing apparatus of the first aspect described above, the edge of the substrate is polished while being in contact with the polishing member having a substantially conical polishing surface on the inner surface. Even when the liquid is supplied, it does not scatter outside.

According to the polishing apparatus of the second aspect, the polishing member has a first polishing portion having a substantially conical polishing surface extending downward in the axial direction and an upper portion in the axial direction. Since it is constituted by the second polishing portion having a substantially conical polishing surface that spreads, the upper bevel and the lower bevel of the edge portion of the substrate can be polished without turning over the substrate. Claim 3
According to the polishing apparatus, the polishing liquid supplied to the polishing member from the polishing liquid supply section can be efficiently collected in the polishing liquid recovery section.

According to the polishing apparatus of the fourth aspect, the polishing surface of the polishing member is inclined at 30 ° to 70 ° with respect to the rotation axis at least at the position where the substrate abuts, so that polishing is performed. The size of the apparatus can be reduced while setting the angles of the upper bevel and the lower bevel to desired values with respect to the diameter of the substrate.

According to the semiconductor device manufacturing method of the present invention, the polishing of the edge portion of the semiconductor wafer and the CMP of the device forming surface are efficiently performed in the device manufacturing process. Even in the manufacture of a semiconductor device with high density, unnecessary substances attached to a semiconductor wafer can be sufficiently removed. In particular, the substance adhered and left on the edge portion does not affect the device formation in the subsequent manufacturing process.

According to the semiconductor device manufacturing apparatus of the present invention, polishing of the edge portion of the semiconductor wafer by the first polishing unit and polishing of the device forming surface of the semiconductor wafer by the second polishing unit are performed. Since the semiconductor wafer can be continuously cleaned in the cleaning chamber, the throughput can be improved by shortening the manufacturing period of the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of a polishing apparatus 100 according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing how the polishing apparatus 100 polishes the edge portion 11 of the semiconductor wafer 10. FIG.

FIG. 3 is a diagram for explaining a force acting on a slurry polishing liquid attached to a polishing surface 122A.

FIG. 4 is a view showing a shape of an edge portion 11 of the semiconductor wafer 10;

FIG. 5 is a diagram for explaining an angle θ2 between the polishing member 122 and the semiconductor wafer 10 during edge polishing.

FIG. 6 is a diagram for explaining the relationship between the inclination angle θ1 of the polishing surface 122A and the angle θ2 of the semiconductor wafer 10;

FIG. 7 is a view showing a method of attaching a polishing cloth 124 constituting a polishing member 122 to an inner wall of a drum 120.

FIG. 8 is a diagram showing an example in which a polishing member 125 is provided on a drum 120.

FIG. 9 shows an opening 126C provided in the auxiliary plate 126;
It is a figure showing the shape of.

FIG. 10 is a diagram illustrating a polishing apparatus 200 according to a second embodiment.

FIG. 11 is a diagram illustrating a semiconductor manufacturing apparatus 500 according to a third embodiment.

FIG. 12 is a diagram showing a semiconductor device manufacturing process using the semiconductor manufacturing apparatus 500.

FIG. 13 is a view showing a conventional polishing apparatus 50.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor wafer (substrate) 10A Device formation surface 11 Edge part 11A Upper bevel 11B Lower bevel 11C Middle surface 100,200 Polishing device 120 Drum (rotating part) 120R Rotating shaft 122,125 Polishing member 122A, 125A Polishing surface 131 Chuck table 150 Polishing liquid recovery tab (polishing liquid recovery section) 170 Cylinder for pressing (moving section) 182 Nozzle (polishing liquid supply section) 210 Polishing member 220 First polishing section 230 Second polishing section 500 Semiconductor manufacturing apparatus 510 Edge polishing unit (First polishing unit) 520 CMP polishing unit (second polishing unit) 540 Post-cleaning unit (cleaning room)

Claims (8)

[Claims] A polishing unit having a polishing member having a substantially conical polishing surface on an inner surface thereof, wherein the rotating member is configured to be rotatable around an axis of the substantially conical polishing surface; A polishing apparatus, comprising: a holding section for holding; and a moving section for moving the holding section such that an edge of the substrate comes into contact with the polishing surface at a predetermined angle. 2. The polishing apparatus according to claim 1, wherein the polishing member includes a first polishing section and a second polishing section, and a polishing surface of the first polishing section is formed of the rotating section. The second polishing unit has a substantially conical shape extending downward with respect to the axial direction, and the polishing surface of the second polishing unit has a substantially conical shape extending upward with respect to the axial direction of the rotating unit. The polishing apparatus according to claim 1, wherein the holding unit is moved so that an edge portion of the substrate selectively contacts a polishing surface of the first polishing unit and a polishing surface of the second polishing unit. 3. The polishing apparatus according to claim 1, wherein a polishing liquid supply unit that supplies a polishing liquid to the polishing member, and a polishing liquid collection unit that covers the substantially conical space from below. A polishing apparatus characterized by being provided. 4. The polishing apparatus according to claim 1, wherein the polishing member has a polishing surface at least at a position where the substrate is in contact with the rotating shaft of the rotating unit. 30 degrees to
A polishing apparatus characterized by being disposed so as to be inclined at 70 degrees. 5. A method for manufacturing a semiconductor device, wherein polishing of an edge portion of a semiconductor wafer and CMP polishing of a device forming surface are continuously performed. 6. A procedure for holding a semiconductor wafer while rotating it, wherein the polishing surface of a polishing member having a substantially conical polishing surface on its inner surface and rotating about an axis of the substantially conical polishing surface is provided on the polishing surface. Pressing the edge of the semiconductor wafer at a predetermined angle. 7. A method for manufacturing a semiconductor device, wherein polishing of an edge portion by the method of polishing a semiconductor wafer according to claim 6 and CMP polishing of a device forming surface of the semiconductor wafer are continuously performed. 8. A first polishing method for polishing an edge portion of a semiconductor wafer.
A polishing unit, a second polishing unit for polishing a device formation surface of a semiconductor wafer, and a cleaning chamber for performing a cleaning process on the semiconductor wafer polished by the second polishing unit are provided continuously. An apparatus for manufacturing a semiconductor device, comprising: