JP2002164323A - フォーカスリング、基板処理装置および基板処理方法 - Google Patents

フォーカスリング、基板処理装置および基板処理方法

Info

Publication number
JP2002164323A
JP2002164323A JP2000361628A JP2000361628A JP2002164323A JP 2002164323 A JP2002164323 A JP 2002164323A JP 2000361628 A JP2000361628 A JP 2000361628A JP 2000361628 A JP2000361628 A JP 2000361628A JP 2002164323 A JP2002164323 A JP 2002164323A
Authority
JP
Japan
Prior art keywords
substrate
focus ring
temperature
processed
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000361628A
Other languages
English (en)
Japanese (ja)
Inventor
Tadayuki Kimura
忠之 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Leading Edge Technologies Inc
Original Assignee
Semiconductor Leading Edge Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Leading Edge Technologies Inc filed Critical Semiconductor Leading Edge Technologies Inc
Priority to JP2000361628A priority Critical patent/JP2002164323A/ja
Priority to KR1020010015056A priority patent/KR100799781B1/ko
Publication of JP2002164323A publication Critical patent/JP2002164323A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2000361628A 2000-11-28 2000-11-28 フォーカスリング、基板処理装置および基板処理方法 Pending JP2002164323A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000361628A JP2002164323A (ja) 2000-11-28 2000-11-28 フォーカスリング、基板処理装置および基板処理方法
KR1020010015056A KR100799781B1 (ko) 2000-11-28 2001-03-23 포커스 링, 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000361628A JP2002164323A (ja) 2000-11-28 2000-11-28 フォーカスリング、基板処理装置および基板処理方法

Publications (1)

Publication Number Publication Date
JP2002164323A true JP2002164323A (ja) 2002-06-07

Family

ID=18833031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000361628A Pending JP2002164323A (ja) 2000-11-28 2000-11-28 フォーカスリング、基板処理装置および基板処理方法

Country Status (2)

Country Link
JP (1) JP2002164323A (ko)
KR (1) KR100799781B1 (ko)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006112826A (ja) * 2004-10-12 2006-04-27 Tokyo Electron Ltd 温度測定装置，温度測定方法，温度測定システム，制御システム，制御方法
JP2006194679A (ja) * 2005-01-12 2006-07-27 Tokyo Electron Ltd 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法
WO2011071073A1 (ja) 2009-12-10 2011-06-16 東京エレクトロン株式会社 静電チャック装置
WO2012003177A2 (en) * 2010-07-02 2012-01-05 Applied Materials, Inc. Methods and apparatus for thermal based substrate processing with variable temperature capability
US8555810B2 (en) 2009-06-25 2013-10-15 Samsung Electronics Co., Ltd. Plasma dry etching apparatus having coupling ring with cooling and heating units
US9783889B2 (en) 2012-03-26 2017-10-10 Applied Materials, Inc. Apparatus for variable substrate temperature control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006112826A (ja) * 2004-10-12 2006-04-27 Tokyo Electron Ltd 温度測定装置，温度測定方法，温度測定システム，制御システム，制御方法
JP2006194679A (ja) * 2005-01-12 2006-07-27 Tokyo Electron Ltd 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法
US8555810B2 (en) 2009-06-25 2013-10-15 Samsung Electronics Co., Ltd. Plasma dry etching apparatus having coupling ring with cooling and heating units
WO2011071073A1 (ja) 2009-12-10 2011-06-16 東京エレクトロン株式会社 静電チャック装置
JP2011124377A (ja) * 2009-12-10 2011-06-23 Tokyo Electron Ltd 静電チャック装置
KR101465849B1 (ko) * 2009-12-10 2014-11-26 도쿄엘렉트론가부시키가이샤 정전 척 장치
US8981263B2 (en) 2009-12-10 2015-03-17 Tokyo Electron Limited Electrostatic chuck apparatus
US9721822B2 (en) 2009-12-10 2017-08-01 Tokyo Electron Limited Electrostatic chuck apparatus
WO2012003177A2 (en) * 2010-07-02 2012-01-05 Applied Materials, Inc. Methods and apparatus for thermal based substrate processing with variable temperature capability
WO2012003177A3 (en) * 2010-07-02 2012-03-29 Applied Materials, Inc. Methods and apparatus for thermal based substrate processing with variable temperature capability
US8920564B2 (en) 2010-07-02 2014-12-30 Applied Materials, Inc. Methods and apparatus for thermal based substrate processing with variable temperature capability
US9783889B2 (en) 2012-03-26 2017-10-10 Applied Materials, Inc. Apparatus for variable substrate temperature control

Also Published As

Publication number Publication date
KR100799781B1 (ko) 2008-01-31
KR20020041732A (ko) 2002-06-03

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