JP2002151524A5 - - Google Patents
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- JP2002151524A5 JP2002151524A5 JP2001245924A JP2001245924A JP2002151524A5 JP 2002151524 A5 JP2002151524 A5 JP 2002151524A5 JP 2001245924 A JP2001245924 A JP 2001245924A JP 2001245924 A JP2001245924 A JP 2001245924A JP 2002151524 A5 JP2002151524 A5 JP 2002151524A5
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001245924A JP4993826B2 (ja) | 2000-08-14 | 2001-08-14 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000246099 | 2000-08-14 | ||
JP2000-246099 | 2000-08-14 | ||
JP2000246099 | 2000-08-14 | ||
JP2001245924A JP4993826B2 (ja) | 2000-08-14 | 2001-08-14 | 半導体装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011259980A Division JP5143272B2 (ja) | 2000-08-14 | 2011-11-29 | El表示装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002151524A JP2002151524A (ja) | 2002-05-24 |
JP2002151524A5 true JP2002151524A5 (ja) | 2008-07-31 |
JP4993826B2 JP4993826B2 (ja) | 2012-08-08 |
Family
ID=26597957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001245924A Expired - Fee Related JP4993826B2 (ja) | 2000-08-14 | 2001-08-14 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4993826B2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004138958A (ja) | 2002-10-21 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US20060072047A1 (en) * | 2002-12-06 | 2006-04-06 | Kanetaka Sekiguchi | Liquid crystal display |
WO2005022262A1 (en) * | 2003-08-28 | 2005-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display device |
CN100568457C (zh) | 2003-10-02 | 2009-12-09 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
US20050170643A1 (en) | 2004-01-29 | 2005-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device |
US7416977B2 (en) | 2004-04-28 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device, liquid crystal television, and EL television |
JP5525224B2 (ja) | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8530897B2 (en) * | 2008-12-11 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device including an inverter circuit having a microcrystalline layer |
JP5533070B2 (ja) * | 2010-03-16 | 2014-06-25 | カシオ計算機株式会社 | 薄膜トランジスタ、発光装置及び薄膜トランジスタの製造方法 |
WO2012090799A1 (en) * | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2012209543A (ja) | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9905589B2 (en) | 2013-12-03 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9577110B2 (en) * | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
JP6615490B2 (ja) * | 2014-05-29 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
CN113658921B (zh) * | 2021-08-13 | 2023-10-17 | 长鑫存储技术有限公司 | 半导体结构的制造方法和半导体结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3515132B2 (ja) * | 1991-06-20 | 2004-04-05 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JPH0845867A (ja) * | 1994-05-27 | 1996-02-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法および表示装置 |
JPH08228005A (ja) * | 1995-02-20 | 1996-09-03 | Seiko Epson Corp | 半導体装置、薄膜トランジスタ、相補型薄膜トランジスタ、液晶表示装置及びそれらの製造方法 |
JPH08316486A (ja) * | 1995-05-17 | 1996-11-29 | Sanyo Electric Co Ltd | 薄膜半導体素子 |
JP2000068518A (ja) * | 1998-08-26 | 2000-03-03 | Sony Corp | 薄膜トランジスタの製造方法 |
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2001
- 2001-08-14 JP JP2001245924A patent/JP4993826B2/ja not_active Expired - Fee Related