JP2002151457A - Method of washing substrate and substrate cleaning device - Google Patents
Method of washing substrate and substrate cleaning deviceInfo
- Publication number
- JP2002151457A JP2002151457A JP2000341094A JP2000341094A JP2002151457A JP 2002151457 A JP2002151457 A JP 2002151457A JP 2000341094 A JP2000341094 A JP 2000341094A JP 2000341094 A JP2000341094 A JP 2000341094A JP 2002151457 A JP2002151457 A JP 2002151457A
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- JP
- Japan
- Prior art keywords
- cleaning
- concentration
- substrate
- component
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、弗化アンモニウム
を含む水溶液を洗浄液として用いた基板洗浄方法及び基
板洗浄装置に関するものであり、洗浄の均一安定処理、
並びに洗浄液の使用量の削減を目的として開発された新
規な基板洗浄方法及び基板洗浄装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for cleaning a substrate using an aqueous solution containing ammonium fluoride as a cleaning liquid.
The present invention also relates to a novel substrate cleaning method and a novel substrate cleaning apparatus developed for the purpose of reducing the amount of cleaning liquid used.
【０００２】[0002]
【従来技術】弗化アンモニウム水溶液（弗化水素酸とア
ンモニアとの任意混合液や界面活性剤を含有するもの等
も含む。）は、弗化水素酸等と混合することにより、半
導体（主にシリコン酸化膜）基板やガラス基板の洗浄や
エッチングを目的として、半導体やＬＣＤ製造工程で多
用されている。2. Description of the Related Art An aqueous solution of ammonium fluoride (including an arbitrary mixed solution of hydrofluoric acid and ammonia and a solution containing a surfactant) is mixed with hydrofluoric acid or the like to form a semiconductor (mainly, It is often used in semiconductor and LCD manufacturing processes for the purpose of cleaning and etching silicon oxide film) substrates and glass substrates.
【０００３】これら分野では、製品の軽量化、小型化、
低消費電力化を目的として、より集積度の高い微細加工
技術が求められている。このため、弗化アンモニウム水
溶液や同水溶液と弗化水素酸との混合液による基板の洗
浄においても、より精度の高い処理が望まれている。In these fields, products have been reduced in weight and size,
For the purpose of reducing power consumption, a fine processing technology with a higher degree of integration is required. For this reason, even when the substrate is washed with an aqueous solution of ammonium fluoride or a mixed solution of the aqueous solution and hydrofluoric acid, a treatment with higher precision is desired.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記洗浄や
エッチングにおいては、洗浄液中の薬品成分（ＮＨ
４Ｆ、ＨＦ）や水分が時間経過とともに変化（蒸発）す
るため、これによりシリコン酸化膜やガラス基板に対す
るエッチングレートが変化（増加）するという問題点を
有している。By the way, in the above-mentioned cleaning and etching, a chemical component (NH
4 F, since HF) and moisture changes (evaporation) with time, this etching rate for the silicon oxide film and the glass substrate has a problem in that changes (increases) by.
【０００５】これは、使用中に洗浄液中の弗酸成分の濃
度が時間経過とともに徐々に増加することによるもので
あるが、現状では、洗浄液の液交換を頻繁に行うことに
より、洗浄液中の各種成分濃度の変化に対する処置を講
じていた。This is because the concentration of the hydrofluoric acid component in the cleaning solution gradually increases with time during use. However, at present, various types of cleaning solution are changed by frequently changing the cleaning solution. Measures were taken for changes in component concentrations.
【０００６】しかしながら、この対策では非常に多量の
該洗浄液を使用することになり［特に弗化アンモニウム
含有洗浄液は数十％（例えば４０重量％程度）の高濃度
の状態で使用されるため、通常数％程度の濃度で使用さ
れる他の洗浄液と比べて１回当たりの液交換で消費され
る薬品量は多くなる。］、これに伴い、弗化アンモニウ
ムや弗化水素酸の使用量（薬品経費）が増加することに
なる。However, in this measure, a very large amount of the cleaning solution is used. [In particular, since the ammonium fluoride-containing cleaning solution is used at a high concentration of several tens% (eg, about 40% by weight), it is usually used. The amount of chemical consumed per liquid exchange is larger than that of other cleaning liquids used at a concentration of about several percent. In association with this, the amount of use of ammonium fluoride or hydrofluoric acid (chemical cost) increases.
【０００７】また、洗浄液が使用済みとなった場合、図
４に示すような排水処理が必要となるが、この場合、多
量の資源（排水処理剤）が消費され、これに伴い多量の
廃棄物（排水と汚泥）を発生することになる（図５参
照）。Further, when the cleaning liquid is used up, a wastewater treatment as shown in FIG. 4 is required. In this case, a large amount of resources (a wastewater treatment agent) is consumed, and a large amount of waste is accordingly consumed. (Drainage and sludge) (see FIG. 5).
【０００８】図４は、洗浄液の廃液処理工程を説明する
ものであり、洗浄槽８１から生じた廃液は、ｐＨ調整槽
８２に運ばれ、ここで例えば２０％水酸化カルシウム液
で中和される。次に、廃液は、凝沈槽８３に運ばれ、硫
酸アルミニウム等の薬品により凝沈し、続いて凝集槽８
４にてポリアクリルアミド系凝集剤等の高分子凝集剤に
より凝集・沈殿し、その後は下水や汚泥となって排出さ
れる。FIG. 4 illustrates a waste liquid treatment process of the cleaning liquid. The waste liquid generated from the cleaning tank 81 is transferred to a pH adjusting tank 82, where it is neutralized with, for example, a 20% calcium hydroxide solution. . Next, the waste liquid is conveyed to the coagulation tank 83 and coagulated by a chemical such as aluminum sulfate.
At 4, the coagulation / precipitation is carried out by a polymer coagulant such as a polyacrylamide coagulant, and thereafter, it is discharged as sewage or sludge.
【０００９】前記処理工程では、図５に示すように、４
０％弗化アンモニウム水溶液１ｋｇに対し、２０％水酸
化カルシウム２．０ｋｇ、８％硫酸アルミニウム０．３
ｋｇ、高分子凝集剤１．６ｋｇを必要とし、固形分７０
％汚泥２．６ｋｇ、下水排水２．３ｋｇが生じる。In the processing step, as shown in FIG.
2.0 kg of 20% calcium hydroxide and 0.3% of 8% aluminum sulfate per 1 kg of 0% aqueous ammonium fluoride solution
kg, 1.6 kg of polymer flocculant, and a solid content of 70 kg
2.6 kg of sludge and 2.3 kg of sewage drainage are produced.
【００１０】近年、地球環境問題は世界的な関心事とな
ってきており、半導体やＬＣＤ等の基板製造時の環境負
荷が問題視されるようになってきた昨今、洗浄液に関し
ても単にコストダウンの目的だけではなく、省資源や廃
棄物の低減、環境浄化等の環境保全面での対応が社会的
に強く求められるようになってきている。[0010] In recent years, global environmental problems have become a global concern, and environmental loads during the production of substrates such as semiconductors and LCDs have been regarded as a problem. Not only the purpose, but also social conservation is strongly demanded for environmental conservation such as resource saving, waste reduction, environmental purification and the like.
【００１１】本発明は、このような従来の実情に鑑みて
提案されたものであり、均一安定な基板洗浄が可能であ
り、省資源化、廃棄物低減化等を可能とする基板洗浄方
法、基板洗浄装置を提供することを目的とする。The present invention has been proposed in view of such a conventional situation, and is capable of uniformly and uniformly cleaning a substrate, saving resources, reducing wastes, and the like. An object of the present invention is to provide a substrate cleaning apparatus.
【００１２】[0012]
【課題を解決するための手段】上述の目的を達成するた
めに、本発明の基板洗浄方法は、弗化アンモニウムを含
む水溶液を洗浄液として基板の洗浄を行う際に、上記洗
浄液中の所定の成分の濃度を測定し、測定結果が設定範
囲を外れたときには洗浄液に当該成分濃度を是正する成
分を補充することを特徴とするものである。In order to achieve the above object, a substrate cleaning method according to the present invention provides a method for cleaning a substrate using an aqueous solution containing ammonium fluoride as a cleaning liquid, the method comprising the steps of: Is measured, and when the measurement result is out of the set range, the cleaning liquid is supplemented with a component for correcting the component concentration.
【００１３】また、本発明の基板洗浄装置は、弗化アン
モニウムを含む水溶液を洗浄液として基板の洗浄を行う
基板洗浄装置において、上記洗浄液を収容する基板洗浄
処理槽と、上記洗浄液中の所定の成分の濃度を測定する
濃度測定手段と、上記濃度測定手段における測定結果が
設定範囲を外れたときに洗浄液に当該成分の濃度を是正
する成分を補充する補充手段とを備えることを特徴とす
るものである。A substrate cleaning apparatus according to the present invention is a substrate cleaning apparatus for cleaning a substrate using an aqueous solution containing ammonium fluoride as a cleaning liquid, wherein a substrate cleaning treatment tank containing the cleaning liquid and a predetermined component in the cleaning liquid are provided. Concentration measuring means for measuring the concentration of the liquid, and replenishing means for replenishing the cleaning liquid with a component for correcting the concentration of the component when the measurement result in the concentration measuring means is out of the set range. is there.
【００１４】弗化アンモニウム水溶液や、弗化アンモニ
ウム水溶液と弗化水素酸との混合液を洗浄液として基板
の洗浄やエッチングを行う際に、洗浄液の使用時間の経
過と共に洗浄液中の各種薬品成分の濃度が変化する。When cleaning or etching a substrate using an aqueous solution of ammonium fluoride or a mixed solution of an aqueous solution of ammonium fluoride and hydrofluoric acid as a cleaning liquid, the concentration of various chemical components in the cleaning liquid with the lapse of use time of the cleaning liquid. Changes.
【００１５】本発明では、洗浄液中の所定の成分の濃度
を測定し、測定結果が設定範囲を外れたときに洗浄液に
必要な成分を補充し、当該成分濃度を是正する。これに
より、基板の洗浄処理が均一安定化（エッチング量の均
一化）される。In the present invention, the concentration of a predetermined component in the cleaning solution is measured, and when the measurement result is out of the set range, the necessary component is added to the cleaning solution to correct the component concentration. Thereby, the cleaning process of the substrate is uniformly stabilized (the etching amount is made uniform).
【００１６】それとともに、洗浄液の液交換頻度の低減
が図られ洗浄液の使用量が削減され、さらには洗浄液を
排水処理するために必要とされる薬品の使用量の低減、
排水処理により排出される排水と汚泥の発生量の低減が
可能となる。At the same time, the frequency of replacement of the cleaning liquid is reduced, so that the amount of the cleaning liquid used is reduced. Furthermore, the amount of the chemical required for draining the cleaning liquid is reduced.
It is possible to reduce the amount of wastewater and sludge generated by wastewater treatment.
【００１７】すなわち、本発明によれば、基板の洗浄処
理の均一安定化が達成され、洗浄液の使用量の低減や排
出量の低減が実現される。That is, according to the present invention, uniform stabilization of the substrate cleaning process is achieved, and a reduction in the amount of cleaning liquid used and a reduction in the amount of discharge are achieved.
【００１８】[0018]
【発明実施の形態】以下、本発明を適用した基板洗浄方
法や基板洗浄装置について、図面を参照しながら詳細に
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate cleaning method and a substrate cleaning apparatus to which the present invention is applied will be described in detail with reference to the drawings.
【００１９】本発明は、弗化アンモニウム水溶液、ある
いは弗化アンモニウム水溶液と弗化水素酸との混合液を
洗浄液とする基板洗浄（あるいはエッチング）におい
て、洗浄液中の各種成分濃度の変化に応じて、洗浄液に
水、アンモニア、アンモニア水、弗化アンモニウム水溶
液等の必要成分を補充し、これを是正すると共に、洗浄
液の累積使用時間に応じて洗浄液の液交換を行い、常に
一定の濃度の洗浄液で洗浄を行うものである。The present invention provides a method for cleaning (or etching) a substrate using an aqueous solution of ammonium fluoride or a mixture of an aqueous solution of ammonium fluoride and hydrofluoric acid as a cleaning solution, in accordance with changes in the concentrations of various components in the cleaning solution. Replenish necessary components such as water, ammonia, aqueous ammonia, aqueous ammonium fluoride solution, etc. to the cleaning liquid, correct it, change the cleaning liquid according to the accumulated usage time of the cleaning liquid, and always wash with the cleaning liquid of a certain concentration. Is what you do.
【００２０】図１は、弗化アンモニウムと弗化水素の混
合液に関して、時間経過と熱酸化膜に対するエッチング
レートとの関係を示したものである。洗浄液の組成は、
ＮＨ ４ Ｆ（４０％）／ＨＦ（５０％）＝４００／１で
あり、洗浄液の温度は２５℃、熱酸化膜はＳｉＯ２ で
ある。FIG. 1 shows a mixture of ammonium fluoride and hydrogen fluoride.
Elapsed time and thermal oxide film etching
It shows the relationship with the rate. The composition of the cleaning solution is
NH 4 F (40%) / HF (50%) = 400/1
Yes, the temperature of the cleaning solution is 25 ° C, and the thermal oxide film is SiO2 so
is there.
【００２１】この図１より、時間経過とともに熱酸化膜
に対するエッチングレートが大幅に増加していることが
わかる。From FIG. 1, it can be seen that the etching rate for the thermal oxide film has increased significantly over time.
【００２２】このように、上記洗浄液を用いた基板洗浄
においては、刻一刻とエッチングレートが変化している
ことになるが、このエッチングレートと経過時間との間
には非常に高い相関関係（比例関係）がある。これは、
洗浄液中の水分や薬品（ＮＨ ４ Ｆ、ＨＦ）成分が時間
経過とともに変化（蒸発）していること、具体的には洗
浄液中の水分やアンモニア成分が一定の比率で蒸発して
おり、洗浄液中のＨＦ成分（熱酸化膜をエッチングに起
因する直接的な成分）濃度が一定比率で増加しているこ
とを意味している。As described above, substrate cleaning using the above-mentioned cleaning liquid is performed.
In, the etching rate changes every moment
In other words, between this etching rate and the elapsed time
Has a very high correlation (proportional relationship). this is,
Moisture and chemicals (NH 4 F, HF) time
Changes (evaporation) over time, specifically washing
The water and ammonia components in the purified liquid evaporate at a certain rate
HF component in cleaning solution
That the concentration is increasing at a fixed rate.
Means
【００２３】図２は、洗浄液中のＨＦ濃度の時間経過に
よる変化を示したものであるが、時間経過とともにＨＦ
の濃度は一定の比率で増加していることがわかる。FIG. 2 shows the change of the HF concentration in the cleaning solution with the passage of time.
It can be seen that the concentration of is increasing at a constant rate.
【００２４】以上のことより、弗化アンモニウム水溶液
や弗化水素酸混合液による基板の洗浄（エッチング）処
理には、洗浄液中のＨＦ濃度を均一且つ安定に維持する
ことが必要となる。As described above, in the cleaning (etching) processing of the substrate with an aqueous solution of ammonium fluoride or a mixed solution of hydrofluoric acid, it is necessary to maintain a uniform and stable HF concentration in the cleaning solution.
【００２５】そこで、本発明においては、図３に示すよ
うな洗浄システムにより、洗浄液中のＨＦ濃度を設定範
囲内に維持するようにしている。Therefore, in the present invention, the HF concentration in the cleaning liquid is maintained within a set range by a cleaning system as shown in FIG.
【００２６】この洗浄システムでは、定期的に洗浄液の
濃度測定を行い、この測定結果に基づいて以後の操作を
行う。In this cleaning system, the concentration of the cleaning liquid is periodically measured, and subsequent operations are performed based on the measurement results.
【００２７】ここでは、ＨＦ濃度を測定対象とする洗浄
システムを例にして説明する。Here, a cleaning system for measuring the HF concentration will be described as an example.
【００２８】上記の通り、ＨＦ濃度は時間経過に伴って
次第に変化するので、本洗浄システムでは、定期的（例
えば６×ｎ時間毎：ｎは８未満の整数）にＨＦ濃度を濃
度測定機により測定する。As described above, since the HF concentration gradually changes with the passage of time, in the present cleaning system, the HF concentration is periodically (for example, every 6 × n hours: n is an integer less than 8) measured by a concentration measuring instrument. Measure.
【００２９】ここで、洗浄液中の構成成分（例えばＨ
Ｆ）の濃度を測定する方法としては、所定の波長の吸光
度や赤外・紫外吸収スペクトル、屈折率、比重、透過
率、電導率等の測定を用いても良いし、カールフィシャ
ーの水分濃度測定計や液体（イオン）クロマトグラフィ
ー等の測定機を用いても良い。Here, the constituents (for example, H
As a method for measuring the concentration of F), measurement of absorbance at a predetermined wavelength, infrared / ultraviolet absorption spectrum, refractive index, specific gravity, transmittance, conductivity, etc. may be used. A measuring instrument such as a meter or liquid (ion) chromatography may be used.
【００３０】この濃度測定において、ＨＦ濃度が設定範
囲内、例えばＨＦ濃度が０．０５〜０．１重量％の範囲
内に入っている場合には、洗浄処理を実施する。In this concentration measurement, when the HF concentration falls within a set range, for example, the HF concentration falls within a range of 0.05 to 0.1% by weight, a cleaning process is performed.
【００３１】そして、所定に期間使用して、液交換の時
期がきたら、洗浄槽内の洗浄液を全て交換する。ここで
は、液交換の時期を４８時間経過後とした。Then, when the liquid has been used for a predetermined period and the liquid exchange time has come, all the cleaning liquid in the cleaning tank is exchanged. Here, the time for liquid exchange was set to after 48 hours.
【００３２】液交換を実施した場合には、所定の時間
後、例えば１０分後に上記濃度測定を行う。When the liquid exchange is performed, the concentration measurement is performed after a predetermined time, for example, 10 minutes.
【００３３】また、液交換の時期が来るまでは、継続的
に洗浄を実施するが、濃度測定後の時間をカウントし、
所定の時間（例えば６×ｎ時間毎：ｎは８未満の整数）
が経過した後には、再度濃度測定を行い、ＨＦ濃度を確
認する。The washing is continuously performed until the liquid exchange time comes, but the time after the concentration measurement is counted.
A predetermined time (for example, every 6 × n hours: n is an integer less than 8)
After elapse, the concentration is measured again to confirm the HF concentration.
【００３４】なお、上記フローにおいて、液交換時期の
確認と濃度測定後の経過時間の確認は、どちらが先でも
良い。In the above flow, either of the confirmation of the liquid exchange timing and the confirmation of the elapsed time after the concentration measurement may be performed first.
【００３５】一方、上記濃度測定において、ＨＦ濃度が
設定範囲を外れている場合、例えばＨＦ濃度が０．０５
〜０．１重量％の範囲から外れた場合には、これを是正
するための成分を洗浄液中に補充する。On the other hand, in the above concentration measurement, when the HF concentration is out of the set range, for example, when the HF concentration is 0.05
If the amount is out of the range of 0.1% by weight, a component for correcting this is added to the washing solution.
【００３６】例えば、測定したＨＦ濃度が上記設定範囲
を上回った場合には、アンモニア成分を洗浄液中に補充
して、ＨＦ濃度を下げる。For example, when the measured HF concentration exceeds the above set range, the ammonia component is replenished into the cleaning solution to lower the HF concentration.
【００３７】このとき、ＨＦの設定濃度と測定濃度の差
分のモル数に対応するアンモニアを供給すれば、ＨＦ濃
度を上記設定範囲内に戻すことができる。At this time, if ammonia corresponding to the number of moles of the difference between the set concentration of HF and the measured concentration is supplied, the HF concentration can be returned to the above set range.
【００３８】具体的には、 ［測定時のＨＦ濃度（重量％）−ＨＦの設定濃度（重量
％）］×（アンモニアの分子量／ＨＦの分子量）×洗浄
液の全重量 なる式で表される量のアンモニア成分を含むアンモニア
ガス、あるいはアンモニア水を洗浄液に供給する。More specifically, an amount represented by the following formula: [HF concentration at measurement (% by weight) −set concentration of HF (% by weight)] × (molecular weight of ammonia / molecular weight of HF) × total weight of washing liquid Ammonia gas containing ammonia component or ammonia water is supplied to the cleaning liquid.
【００３９】アンモニア成分を補充すると、ＨＦが中和
されて弗化アンモニウムとなり、その結果、洗浄液中の
ＨＦ濃度が抑えられる。アンモニア水の場合には、希釈
による効果と中和による効果の両者が期待できる。When the ammonia component is replenished, HF is neutralized to ammonium fluoride, and as a result, the HF concentration in the cleaning solution is suppressed. In the case of aqueous ammonia, both effects by dilution and effects by neutralization can be expected.
【００４０】逆に、測定したＨＦ濃度が上記設定範囲を
下回った場合には、ＨＦ成分を洗浄液中に補充して、Ｈ
Ｆ濃度を上げる。Conversely, when the measured HF concentration falls below the above set range, the HF component is replenished into the washing solution,
Increase F concentration.
【００４１】このとき、ＨＦの設定濃度と測定濃度の差
分のＨＦ成分を供給すれば、ＨＦ濃度を上記設定範囲内
に戻すことができる。At this time, if an HF component having a difference between the set concentration of HF and the measured concentration is supplied, the HF concentration can be returned to within the set range.
【００４２】具体的には、［測定時のＨＦ濃度（重量
％）−ＨＦの設定濃度（重量％）］×洗浄液の全重量な
る式で表される量のＨＦ成分、例えばＨＦガスや弗化水
素酸を洗浄液に供給する。More specifically, the amount of the HF component represented by the formula of [HF concentration at measurement (wt%)-set concentration of HF (wt%)] × total weight of the cleaning liquid, for example, HF gas or fluoride Hydrogen acid is supplied to the cleaning solution.
【００４３】なお、この洗浄システムにおいては、何度
濃度測定を行ってもＨＦ濃度が設定濃度範囲内に入らな
い場合、エラー通報を行い、作業を一時中止にするよう
になっている。例えば、ＨＦ濃度が連続して４回設定濃
度範囲から外れた場合、エラー通報を行い、作業を一時
中止にする。In this cleaning system, if the HF concentration does not fall within the set concentration range, no matter how many times the concentration is measured, an error message is issued and the operation is suspended. For example, if the HF concentration deviates from the set concentration range four times in a row, an error message is issued and the operation is suspended.
【００４４】以上のように、定期的にＨＦ濃度を測定
し、設定範囲を外れた場合にこれを是正する成分を追加
補充することで、洗浄液によるエッチング処理を均一／
安定化（すなわち、酸化膜に対するエッチング量を一定
に維持する。）が図れ、従来のように洗浄液の液交換を
頻繁に行う必要がなくなる。これにより、洗浄液の長寿
命化が図れることになり、液交換頻度の低減により洗浄
液の消費量の低減（省資源）と、洗浄液の排水処理に必
要とされる排水処理剤の低減（省資源）にも貢献でき
る。さらには、これら薬品の使用量の低減から、排水処
理時に発生する汚泥や排水の排出量を低減（廃棄物発生
量の低減）することにも貢献できることになる。As described above, the HF concentration is periodically measured, and when the HF concentration deviates from the set range, the component for correcting the HF concentration is additionally supplied, so that the etching treatment with the cleaning liquid can be performed uniformly /
Stabilization (that is, the amount of etching of the oxide film is kept constant) can be achieved, and it is not necessary to frequently change the cleaning liquid as in the related art. As a result, the service life of the cleaning liquid can be prolonged, the consumption of the cleaning liquid can be reduced by reducing the frequency of liquid replacement (resource saving), and the wastewater treatment agent required for wastewater treatment of the cleaning liquid can be reduced (resource saving). Can also contribute. Furthermore, the reduction in the amount of use of these chemicals can contribute to reducing the amount of sludge and wastewater generated during wastewater treatment (reducing the amount of waste generated).
【００４５】以上のことより、本発明は単に基板処理の
均一／安定化を図るばかりではなく、省資源、廃棄物発
生量の低減等の面で地球環境保全にも貢献するものであ
る。As described above, the present invention contributes not only to the uniformity / stabilization of the substrate processing but also to the preservation of the global environment in terms of resource saving and reduction of waste generation.
【００４６】[0046]
【発明の効果】以上に述べたように、本発明の方法、装
置を用いることにより、弗化アンモニウムを含む水溶液
により基板の洗浄を行う際に、処理の均一安定化が図れ
るとともに、洗浄液の液交換頻度の低減が可能となるた
め、薬品（洗浄液、排水処理剤）の省資源化やこれに伴
い発生する汚泥や排水の排出量の大幅な低減が可能とな
る。As described above, by using the method and apparatus of the present invention, when the substrate is cleaned with an aqueous solution containing ammonium fluoride, the processing can be uniformly stabilized, and the cleaning liquid can be used. Since the frequency of replacement can be reduced, it is possible to save resources of chemicals (cleaning liquids and wastewater treatment agents) and significantly reduce the amount of sludge and wastewater generated due to this.
【図１】洗浄液における経過時間とエッチングレートの
関係を示す特性図である。FIG. 1 is a characteristic diagram showing a relationship between an elapsed time and an etching rate in a cleaning liquid.
【図２】経過時間と洗浄液中のＨＦ濃度の関係を示す特
性図である。FIG. 2 is a characteristic diagram showing a relationship between an elapsed time and an HF concentration in a cleaning liquid.
【図３】本発明を適用した洗浄システムにおける処理フ
ローを示すフローチャートである。FIG. 3 is a flowchart showing a processing flow in a cleaning system to which the present invention is applied.
【図４】洗浄液の廃液処理工程を説明するための図であ
る。FIG. 4 is a view for explaining a waste liquid processing step of a cleaning liquid.
【図５】洗浄液の廃液処理に必要な資源を示す図であ
る。FIG. 5 is a diagram showing resources required for waste liquid treatment of a cleaning liquid.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ０２Ｆ 1/1333 ５００ Ｇ０２Ｆ 1/1333 ５００ Ｈ０１Ｌ 21/308 Ｈ０１Ｌ 21/308 Ｇ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G02F 1/1333 500 G02F 1/1333 500 H01L 21/308 H01L 21/308 G
Claims (8)
として基板の洗浄を行う際に、 上記洗浄液中の所定の成分の濃度を測定し、測定結果が
設定範囲を外れたときには洗浄液に当該成分濃度を是正
する成分を補充することを特徴とする基板洗浄方法。When cleaning a substrate using an aqueous solution containing ammonium fluoride as a cleaning solution, the concentration of a predetermined component in the cleaning solution is measured, and when the measurement result is out of a set range, the concentration of the component is added to the cleaning solution. A substrate cleaning method characterized by replenishing components to be corrected.
果が設定範囲を下回った場合にはＨＦ成分を補充し、測
定結果が設定範囲を上回った場合にはアンモニア成分を
補充することを特徴とする請求項１記載の基板洗浄方
法。2. The method according to claim 1, wherein the component to be measured is HF, and the HF component is replenished when the measured result is below the set range, and the ammonia component is replenished when the measured result is outside the set range. The method for cleaning a substrate according to claim 1, wherein
を特徴とする請求項１記載の基板洗浄方法。3. The method according to claim 1, wherein the cleaning liquid is replaced after a predetermined time has elapsed.
ことを特徴とする請求項１記載の基板洗浄方法。4. The method for cleaning a substrate according to claim 1, wherein said concentration is measured every predetermined time.
として基板の洗浄を行う基板洗浄装置において、 上記洗浄液を収容する基板洗浄処理槽と、 上記洗浄液中の所定の成分の濃度を測定する濃度測定手
段と、 上記濃度測定手段における測定結果が設定範囲を外れた
ときに洗浄液に当該成分の濃度を是正する成分を補充す
る補充手段とを備えることを特徴とする基板洗浄装置。5. A substrate cleaning apparatus for cleaning a substrate using an aqueous solution containing ammonium fluoride as a cleaning liquid, comprising: a substrate cleaning tank containing the cleaning liquid; and a concentration measuring means for measuring a concentration of a predetermined component in the cleaning liquid. And a replenishing means for replenishing the cleaning liquid with a component for correcting the concentration of the component when the measurement result of the concentration measuring means is out of a set range.
果が設定範囲を下回った場合に補充する成分がＨＦ成分
であり、測定結果が設定範囲を上回った場合に補充する
成分がアンモニア成分であることを特徴とする請求項５
記載の基板洗浄装置。6. The component to be measured is HF, the component to be replenished when the measurement result falls below the set range is the HF component, and the component to be replenished when the measurement result exceeds the set range is the ammonia component. 6. The method according to claim 5, wherein
A substrate cleaning apparatus as described in the above.
換手段を有することを特徴とする請求項５記載の基板洗
浄装置。7. The substrate cleaning apparatus according to claim 5, further comprising liquid exchange means for exchanging the cleaning liquid after a predetermined time has elapsed.
上記濃度の測定を行うものであることを特徴とする請求
項５記載の基板洗浄装置。8. The substrate cleaning apparatus according to claim 5, wherein said concentration measuring means measures said concentration every predetermined time.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000341094A JP4419315B2 (en) | 2000-11-08 | 2000-11-08 | Substrate cleaning method and substrate cleaning apparatus |
| US09/985,396 US6799589B2 (en) | 2000-11-08 | 2001-11-02 | Method and apparatus for wet-cleaning substrate |
| KR1020010069158A KR20020035779A (en) | 2000-11-08 | 2001-11-07 | Method and apparatus for wet-cleaning substrate |
| TW090127758A TW517300B (en) | 2000-11-08 | 2001-11-08 | Method and apparatus for wet-cleaning substrate |
| EP01402866A EP1205539A3 (en) | 2000-11-08 | 2001-11-08 | Method and apparatus for wet-cleaning a substrate |
| US10/898,366 US6938626B2 (en) | 2000-11-08 | 2004-07-26 | Method and apparatus for wet-cleaning substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000341094A JP4419315B2 (en) | 2000-11-08 | 2000-11-08 | Substrate cleaning method and substrate cleaning apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002151457A true JP2002151457A (en) | 2002-05-24 |
| JP4419315B2 JP4419315B2 (en) | 2010-02-24 |
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ID=18815887
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000341094A Expired - Fee Related JP4419315B2 (en) | 2000-11-08 | 2000-11-08 | Substrate cleaning method and substrate cleaning apparatus |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385629C (en) * | 2006-09-18 | 2008-04-30 | 无锡华润华晶微电子有限公司 | Method and device for cleaning semiconductor crystal wafer |
| JP2016092189A (en) * | 2014-11-04 | 2016-05-23 | 株式会社東芝 | Processing device and processing method |
| JP2017005120A (en) * | 2015-06-10 | 2017-01-05 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium |
| CN110104866A (en) * | 2019-06-14 | 2019-08-09 | 安徽浩悦环境科技有限责任公司 | A kind of processing unit and its treatment process of high-concentration acidic wastewater fluorination waste liquor of ammonium |
-
2000
- 2000-11-08 JP JP2000341094A patent/JP4419315B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385629C (en) * | 2006-09-18 | 2008-04-30 | 无锡华润华晶微电子有限公司 | Method and device for cleaning semiconductor crystal wafer |
| JP2016092189A (en) * | 2014-11-04 | 2016-05-23 | 株式会社東芝 | Processing device and processing method |
| JP2017005120A (en) * | 2015-06-10 | 2017-01-05 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium |
| CN110104866A (en) * | 2019-06-14 | 2019-08-09 | 安徽浩悦环境科技有限责任公司 | A kind of processing unit and its treatment process of high-concentration acidic wastewater fluorination waste liquor of ammonium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4419315B2 (en) | 2010-02-24 |
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