JP2002151407A - Aligner, semiconductor thin film, thin-film transistor, liquid crystal display, el display, and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a TFT semiconductor film which can solve problems with a small mobility and much deteriorated TFT due to a manufactured silicon thin film of polycrystalline structure and small crystal grain diameters in a crystallization step (1), and with large variations in the film thickness and crystal grain diameter when the film is manufactured with a single pulse since a laser for use in crystallization is a pulse laser and a laser intensity for each pulse varies (2). SOLUTION: By a crystallization method for irradiating a laser beam onto an amorphous semiconductor film having a film thickness distribution with a smooth step, and by a crystallization method for irradiating a laser beam having a light quantity distribution onto an amorphous semiconductor film having a film thickness distribution, a large-grain-diametered semiconductor crystal is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor thin film, a thin film transistor, a liquid crystal display, an EL display, a method of manufacturing the same, and an exposure apparatus.

[0002]

2. Description of the Related Art As a method of manufacturing a semiconductor film of a thin film transistor (TFT), a non-crystalline semiconductor film (amorphous semiconductor and microcrystalline semiconductor) formed on a substrate such as glass is irradiated with laser light and melted. A laser annealing method is used to obtain a crystalline semiconductor film (a polycrystalline semiconductor film and a continuous single crystal semiconductor film) by crystallization. This is usually called a crystallization step.

As a laser light source, an argon laser, K
rF and XeCl excimer lasers are commonly used. Since Si is mainly used as the semiconductor and glass is mainly used as the substrate and the process is configured at a temperature equal to or lower than the melting point of the glass, the T
FT is usually called low temperature poly-Si-TFT. The following invention is similarly effective for semiconductor thin films such as GaAs, Ge, SiGe, and SiGeC. However, the following description will focus on silicon (Si) that is generally used at present.

[0004] In a TFT liquid crystal display device mainly manufactured at present, a TFT using amorphous Si as a semiconductor layer is generally used, and a circuit portion for driving pixels is provided around a screen by an IC.
A method of attaching chips is used. By using a high-temperature low-temperature poly-Si-TFT, a driver circuit can be manufactured using a TFT formed over a glass substrate. By using a low-temperature poly-Si-TFT, an outer peripheral portion of a panel of a liquid crystal display device, which is usually called a frame,
A portion having no screen can be reduced, and a liquid crystal display device having a higher definition dot pitch can be manufactured. In addition, by using a high-performance low-temperature poly-Si-TFT, a system-on-panel (SOP) in which various semiconductor circuits are formed on a glass substrate becomes possible. Further, by switching an electroluminescence (EL) display element using a low-temperature poly-Si-TFT, the EL element is switched.
A display device can be manufactured.

[0005]

However, the above-mentioned crystallization step has the following problems. 1. Since the produced silicon thin film is polycrystalline and has a small crystal grain size,
The mobility is low, and the deterioration is large when a TFT is manufactured. 2. Usually, the laser used for crystallization is a pulse laser, and the laser intensity varies from pulse to pulse. When a single pulse is used, the film quality and crystal grain size of the crystal vary.

Further, when a TFT has a silicon crystal grain boundary near a boundary between a low concentration impurity region (LDD) or an offset region and a channel region, there are many crystal defects and dangling bonds near the grain boundary. When the TFT is switched for a long time or many times,
Deterioration occurs.

Further, when the grain size of the silicon crystal in the channel region of the TFT is small, the characteristics such as mobility are deteriorated, the definition of the image of the liquid crystal display device is reduced, or the luminance of the EL display device is reduced. There are issues.

Next, as a method of manufacturing a TFT or a liquid crystal display device, various methods for forming a silicon thin film with a relatively large grain size have been studied, but there is no method for defining a positional relationship between a crystal and a TFT pattern. Therefore, the presence or absence of grain boundaries in the LDD, offset, or channel region occurs, the number of grain boundaries varies from TFT to TFT, or the silicon crystal grain size in the channel region varies from TFT to TFT, resulting in variations in TFT characteristics. Was a factor.

Further, compared with a TFT using amorphous silicon, there is a problem that an extra laser annealing device is required and the device cost is high.

[0010]

The following means are taken as an exposure apparatus. (Claim 1) By using an exposure apparatus capable of performing exposure on a photosensitive resist and melt crystallization on an amorphous semiconductor by the same apparatus, a laser annealing apparatus and an exposure apparatus can be used, thereby reducing the apparatus cost. In addition, the same exposure mask can be used, and alignment is facilitated. (Claim 2) By using a laser beam having a wavelength of 500 nm or less as a light source of the exposure apparatus according to claim 1, the absorption efficiency for the amorphous semiconductor film is increased, and the crystallinity of the semiconductor film is improved. In addition, the light intensity can be controlled by the phase shift technique.

The following measures were taken as the semiconductor thin film. (Claim 3) A semiconductor comprising at least a step of forming an amorphous semiconductor film on a substrate and a step of irradiating the substrate with intense light or laser light, wherein the thickness of the amorphous semiconductor film is partially different. By forming a thin film, a portion having a film thickness distribution is laser-crystallized to generate a heat distribution, thereby making it possible to increase the grain size of the silicon crystal. (4) The semiconductor thin film according to the above (3), wherein at least a part of the thick portion of the amorphous semiconductor film has an apex or at least one of the thin portions. By using a semiconductor thin film having a thinnest point in the portion, the heat distribution when a portion having a film thickness distribution is laser-crystallized is clearly defined, and the formation position of a large grain silicon crystal can be defined. . (5) The semiconductor thin film according to (3), wherein a portion of the amorphous semiconductor film having a large thickness has a sharpened shape at least partially, for example, a diamond-shaped semiconductor thin film. Thereby, the heat distribution when a portion having a film thickness distribution is laser-crystallized is clearly defined, and the formation position of the large grain silicon crystal can be defined. (6) The method of manufacturing a semiconductor thin film according to any one of (3) to (5), wherein the step portion of the amorphous semiconductor film has a tapered shape, and the length of the step portion is 0.5 μm or more. As a result, when a portion having a film thickness distribution is laser-crystallized, the heat distribution becomes gentle, and a silicon crystal having a larger grain size can be formed.

As a method of manufacturing a semiconductor thin film, the following measures were taken. (7) A plurality of irregularities are formed on the surface of the amorphous semiconductor film by providing a photosensitive resist layer portion having a partially different film thickness on the surface of the amorphous semiconductor film and etching the photosensitive resist layer by a dry etching method. 7. Forming a part
By using the method for manufacturing a semiconductor thin film described in (1), a large number of large-grain silicon crystals can be arranged in the substrate plane. (Claim 8) Coating a photosensitive resist layer, and exposing, developing,
Peeling, strip, after forming a square or similar resist pattern, by heating above the softening temperature of the photosensitive resist, utilizing the surface tension of the photosensitive resist,
According to the method of manufacturing a semiconductor thin film according to the sixth aspect of the present invention, in which a resist pattern having a gentle step is formed, a large number of large-diameter silicon crystals can be arranged on the substrate surface. Further, a photosensitive resist layer having a partially different film thickness can be easily formed. (Claim 9) Coating a photosensitive resist layer, exposing, developing,
After peeling and forming a circular or similar resist pattern, the resist pattern is heated to a temperature equal to or higher than the softening temperature of the photosensitive resist to form a resist pattern having a spherical convex portion by using the surface tension of the photosensitive resist. According to the method of manufacturing a semiconductor thin film according to the sixth aspect, it is easy to form a large number of in-plane film thickness distributions having vertices, and a large grain silicon crystal can be formed at clearly defined positions. It became so. (Claim 10) A photosensitive resist layer is coated, exposed, developed, and peeled to form a resist pattern having at least a partly pointed shape, for example, a rhombus shape or a similar shape, and then a temperature higher than the softening temperature of the photosensitive resist. 7. A method of manufacturing a semiconductor thin film according to claim 6, wherein a resist pattern having a spherical convex portion is formed by utilizing the surface tension of the photosensitive resist by heating the film. Can easily be formed in a plane, and a large grain silicon crystal can be formed at a clearly defined position. (Claim 11) An exposure mask for changing the phase of irradiation light,
For example, by exposing and developing a photosensitive resist using a light-transmitting film and plate having partially different thicknesses,
7. A method of manufacturing a semiconductor thin film according to claim 6, wherein a resist film having a difference in film thickness is formed and a semiconductor thin film having a difference in film thickness is formed by etching the resist film. A large number of crystals can be arranged in the plane of the substrate. Further, a photosensitive resist layer having a partially different film thickness can be easily formed. (Claim 12) In the step of exposing the photosensitive resist,
By exposing and developing the photosensitive resist using an exposure device that designed the optical path so that the irradiation light is out of focus,
7. A method of manufacturing a semiconductor thin film according to claim 6, wherein a resist film having a difference in film thickness is formed and a semiconductor thin film having a difference in film thickness is formed by etching the resist film. A large number of crystals can be arranged in the plane of the substrate. Further, a photosensitive resist layer having a partially different film thickness can be easily formed. (Claim 13) In the step of exposing the photosensitive resist,
Using an exposure mask with the area of the opening partly changed,
7. A semiconductor film according to claim 6, wherein the photosensitive resist is exposed and developed to form a resist film having a thickness difference, and then a semiconductor thin film having a thickness difference is formed by etching. Thin Film Manufacturing Method It has become possible to arrange a large number of large grain silicon crystals in the substrate plane. Further, a photosensitive resist layer having a partially different film thickness can be easily formed. (Claim 14) An amorphous semiconductor film having a partially different thickness is crystallized by irradiating a portion having a different thickness with intense light or laser light having a partially different light amount. By adopting a method for manufacturing a semiconductor thin film, the heat distribution in the film during laser crystallization can be further controlled, and a silicon crystal having a larger grain size can be formed. (15) The method for manufacturing a semiconductor thin film according to (14), wherein the exposure mask in which the area of the opening is partially changed is irradiated with intense light or laser light having a partially different light amount. Thereby, the heat distribution in the film at the time of laser crystallization can be further controlled, and a silicon crystal having a larger grain size can be formed. (16) The method of manufacturing a semiconductor thin film according to (14), further comprising irradiating an intense light or a laser light having a partially different light amount using an exposure mask for changing a phase of the irradiation light. The heat distribution in the inside can be controlled, and a silicon crystal having a larger grain size can be formed. (17) The exposure mask used in the step of irradiating the photosensitive resist and the exposure mask used in the step of crystallizing the semiconductor film have the same or similar light amount distribution.
According to the method for manufacturing a semiconductor thin film described in (1), the heat distribution in the film at the time of laser crystallization can be further controlled, and a silicon crystal having a larger grain size can be formed. (18) The method for producing a semiconductor thin film according to any one of (14) to (16), wherein the exposure mask used in the step of irradiating the photosensitive resist and the exposure mask used in the step of crystallizing the semiconductor film have the opposite light intensity distribution. This makes it possible to further control the heat distribution in the film during laser crystallization,
Further, it has become possible to form a silicon crystal having a large grain size. (Claim 19) The amorphous semiconductor film having a diamond-shaped or circular-shaped or similar-shaped portion having a large film thickness is irradiated with intense light or laser light having a light intensity distribution in the form of a band, thereby obtaining a crystalline material. By adopting a method of manufacturing a semiconductor thin film for forming a semiconductor film, it is possible to further control the heat distribution in the film during laser crystallization, and to form a silicon crystal having a large grain size by clearly defining a position. It became possible. (Claim 20) TF whose film thickness in the semiconductor layer is partially different
By setting T, heat distribution occurs during laser crystallization,
It has become possible to increase the grain size of silicon crystals. Also, each TF
Due to the existence of the film thickness distribution in the semiconductor layer of T, the variation in the grain size of the silicon crystal was reduced, and the characteristics of the TFT were stabilized. (Claim 21) By using a TFT in which the semiconductor film thickness in the region where the channel is formed in the semiconductor layer is partially different, heat distribution is generated during laser crystallization, and it is possible to increase the grain size of the silicon crystal. became. In addition, the existence of the film thickness distribution in the channel region of each TFT reduced the variation in the silicon crystal grain size, and stabilized the TFT characteristics. (Claim 22) The method according to claim 20, wherein the step portion of the semiconductor film has a tapered shape, and the length of the step portion is 0.5 μm or more.
By doing so, the heat distribution at the time of laser crystallization becomes gentle, and a silicon crystal having a larger grain size can be formed, and the characteristics of the TFT are stabilized. (23) The TFT according to (20) or (21), wherein at least a part of the thick part of the semiconductor film has an apex or at least one part of the thin part of the semiconductor film. TFT with the thinnest point in the part
As a result, the heat distribution at the time of laser crystallization is clearly defined, the position of the large grain silicon crystal and the position of the TFT can be clearly matched, and the characteristics of the TFT are improved and the variation is reduced. . (Claim 24) The TFT according to claims 20 and 21, wherein the TFT has a shape in which at least a part thereof has a pointed shape when viewed from above a portion where the semiconductor film has a large thickness, for example, a rhombus. As a result, the heat distribution during laser crystallization is clearly defined, and the position of the large grain silicon crystal and T
It is possible to clearly match the position of the FT,
The characteristics of T were improved and the variation was reduced. (25) A method of manufacturing a TFT using the method of manufacturing a semiconductor thin film according to any one of claims 7 to 19,
Large grain silicon crystal can be formed, and TFT
Characteristics are stable. (26) A plurality of irregularities are formed on the surface of the amorphous semiconductor film by providing a photosensitive resist layer portion having a partially different film thickness on the surface of the amorphous semiconductor film and etching the photosensitive resist layer portion by a dry etching method. Forming a portion and, at the same time, forming a key pattern for a photolithography process on a semiconductor thin film, the method of manufacturing a TFT according to claim 25, whereby a position where a heat distribution occurs during laser crystallization is clearly defined; The position of the large-diameter silicon crystal and the position of the TFT can be clearly matched, and the characteristics of the TFT are improved and the variation is reduced. (27) The liquid crystal display device using the TFT according to any one of (20) to (24), wherein the film thickness in the semiconductor layer is partially different. This caused a large grain size of the silicon crystal. In addition, the existence of a film thickness distribution in the semiconductor layer of each TFT reduces variation in the size of silicon crystals, stabilizes TFT characteristics, enables a liquid crystal display device to have high definition, and improves the yield. did. (28) A method of manufacturing a liquid crystal display device using the method of manufacturing a TFT according to any one of (25) and (26), wherein a large number of large-grain silicon crystals are arranged on a substrate surface, and It becomes possible to form a TFT at the position of the crystal, the variation in the particle size of the silicon crystal is reduced,
The TFT characteristics are stabilized, and a liquid crystal display device with high definition and a high yield can be manufactured. (29) An EL display device using the TFT according to any one of (20) to (24), wherein the film thickness in the semiconductor layer is partially different. Distribution occurred, and it was possible to increase the grain size of the silicon crystal. In addition, the existence of the film thickness distribution in the semiconductor layer of each TFT reduces variations in the silicon crystal grain size, stabilizes the TFT characteristics, improves the luminance of the EL display device, and increases the yield. Improved. (Claim 30) According to the method for manufacturing an EL display device using the method for manufacturing a TFT according to claims 25 and 26, the heat distribution in the film during laser crystallization can be further controlled, and the size can be further increased. A silicon crystal having a grain size can be formed, characteristics such as mobility of a TFT can be further improved, and luminance of an EL display device can be further improved, thereby improving a yield.

The operation of the present invention will be described below.

The operation of the exposure apparatus in which exposure of a photosensitive resist and melting and crystallization of an amorphous semiconductor are performed by the same apparatus will be described. Conventionally, a laser annealing apparatus was a method of uniformly irradiating a laser beam to an amorphous semiconductor film.
As shown in this patent, it is preferable to adopt a method of controlling the position and intensity of light using an exposure mask and a phase shift mask. Further, as for the demand for the exposure apparatus, a gray tone technique for controlling the position of the exposure amount and changing the position locally is required. Since the contents required for these two devices are the same, they were realized by the same device. The wavelength used for laser crystallization preferably has an absorptivity to silicon and a high wavelength of 500 nm or less for high efficiency and unnecessary heating of the glass substrate. There is no problem with exposure to a photosensitive resist if the high wavelength is 500 nm or less. In addition, by using laser light as the light source, the phase shift technique can be effectively used, and it is easy to locally increase or decrease the amount of light.

The function of the semiconductor thin film for forming a polycrystalline silicon film by irradiating a laser beam to an amorphous semiconductor thin film having a partially different thickness of the amorphous semiconductor film will be described. By laser crystallization of a portion having a film thickness distribution, heat distribution is generated, and the timing of solidification start at the time when the amorphous semiconductor thin film is melted and crystallized is continuously shifted in place. As a result, the starting point of crystal growth is limited, and the crystal grows continuously, thereby increasing the grain size of the silicon crystal. In order to form a large-grain crystal, it is preferable that the step portion of the film thickness has a smooth change in film thickness,
It is necessary to form a tapered shape of the step portion close to the target particle size. In order to form a crystal having a large grain size of 1 μm or more, the length of the step portion needs to be 0.5 μm or more. In addition, by forming a portion that becomes a vertex when the thickness difference of the amorphous semiconductor film is provided, the vertex portion is first solidified during crystallization and becomes a starting point of crystal growth. By providing the vertices, it is possible to clearly define the position where the crystal is formed.

Next, a pattern of a photosensitive resist layer will be described for explaining the operation of the above-described method of manufacturing a semiconductor thin film, and a portion of the amorphous semiconductor layer will be partially etched by a dry etching method. Thus, an amorphous semiconductor layer having the above film thickness distribution can be formed. Further, in the step of forming a pattern of the photosensitive resist layer, by using an exposure mask in which the area of the opening is partially changed,
The amount of light applied to the photosensitive resist can be controlled, and the end of the remaining resist can be formed into a smooth tapered shape. By performing dry etching from above, the amorphous semiconductor film is formed such that the tapered shape at the difference portion of the amorphous semiconductor film changes smoothly. Also,
In the step of forming the pattern of the photosensitive resist layer, the amount of light irradiated to the photosensitive resist can be similarly controlled by a method using an exposure mask that changes the phase of the irradiation light, and the tapered shape of the difference portion can be controlled. It can be formed so as to change smoothly. As the exposure mask that changes the phase, a method that changes the phase of the irradiation light by using a light-transmitting film or plate having a partially different thickness can easily create the mask. In order to obtain a smoother resist pattern end shape, after forming the resist pattern, by heating the photosensitive resist to a softening temperature or higher, a pattern in which the film thickness smoothly changes due to the surface tension of the photosensitive resist is formed. Is done. In this case, by forming the resist pattern in a circular shape or a similar shape, a resist pattern in the form of a spherical convex portion having an apex can be formed. By dry-etching this pattern, an amorphous semiconductor thin film having the above-mentioned apex and having a film thickness distribution can be easily formed.

A large-diameter silicon crystal can also be formed by irradiating an amorphous semiconductor thin film having no or small film thickness distribution with intense light or laser light of a partially different light amount. By performing crystallization by irradiating intense light or laser light using an exposure mask in which the area of the opening is partially changed, it is possible to smoothly control the heat distribution at the time of melting. A diameter silicon crystal can be formed.

Further, by irradiating the amorphous semiconductor thin film having the film thickness distribution with intense light or laser light of a partially different light amount, the heat distribution at the time of melting can be more smoothly controlled. Thus, a large-diameter silicon crystal can be formed. By performing crystallization using an exposure mask in which the area of the opening is partially changed,
Intense light or laser light of a partially different light amount can be easily obtained. In addition, by performing crystallization using an exposure mask that changes the phase of irradiation light, similarly, strong light or laser light having a different light amount can be easily obtained. By exchanging (approximately) or reversing the exposure mask and the local exposure dose distribution used in the photo process of the amorphous semiconductor film with the exposure mask and the local exposure dose distribution used in the crystallization process, The distribution can be effectively controlled, and a large grain silicon crystal can be formed.

The TFT prepared by using the above semiconductor thin film
The operation of will be described. By forming a TFT using a semiconductor thin film having a large-diameter silicon crystal obtained by laser-crystallizing an amorphous semiconductor film having a partially different thickness in a semiconductor layer, defects mainly present at crystal grain boundaries can be reduced. It is reduced or eliminated, and TFT characteristics including mobility are improved. In addition, a low concentration impurity region (LDD region) or an offset region is formed in the TFT. When the LDD region or the offset region has a large crystal grain size or becomes single crystal, a current flows through the TFT. In addition, the phenomenon that the semiconductor layer is broken based on the defect is less likely to occur, and the reliability is improved. When a large grain silicon crystal is formed with a difference in film thickness in the channel region, TFT characteristics are improved. It is preferable to form a large grain silicon crystal having a grain diameter including all of the channel region and the LDD region or the offset region of the TFT. It needs to be close. In addition, a semiconductor thin film including a large-grain silicon crystal obtained by performing laser crystallization on an amorphous semiconductor film in which an apex portion exists at least partially in a thick portion has a large grain size. Since the position of the silicon crystal is clearly specified, the position of the large grain silicon crystal and the TFT
Can be clearly matched, the characteristics of the TFT are improved, and the variation is reduced.

The operation of the TFT manufacturing method according to the present invention will be described. A semiconductor thin film containing a large grain silicon crystal can be formed in the same manner as in the above-described method for manufacturing a semiconductor thin film. In the step of forming a film thickness distribution on the amorphous semiconductor film by the photo and etching steps, a large number of large grain silicon crystals are arranged in the substrate surface by forming a key pattern for the subsequent photo step at the same time. In addition, the alignment accuracy for accurately forming the TFT corresponding to the position of the large grain silicon crystal is improved, the characteristics of the TFT are improved, the variation in the characteristics is reduced, and the reliability is improved.

The operation of the liquid crystal display device using the above-described TFT containing a large grain silicon crystal will be described. By forming a liquid crystal display device using a TFT in which a large-diameter silicon crystal is formed using the above-described film thickness distribution or light amount distribution, a high-definition design can be performed because of high TFT characteristics. . Further, since the variation of the TFT is small, the uniformity of the screen luminance is improved, and the yield is improved.
Since the reliability of the TFT is high, the reliability of the liquid crystal display device is improved.

The operation of the EL display device using the TFT containing the large grain silicon crystal will be described. By forming an EL display device using a TFT in which a large-diameter silicon crystal is formed using the above-described film thickness distribution or light amount distribution, luminance of the EL display device is improved due to high TFT characteristics. Since the variation of the TFT is small, the uniformity of the screen luminance is increased, and the yield is improved. TFT
, The reliability of the EL display device is improved.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. Note that the amorphous silicon film is used as a general term for an amorphous silicon film and a polycrystalline silicon film. When defining the irradiation energy density of the laser beam, it is necessary to calculate the irradiation area, but when measuring the distribution of the laser intensity, the location where the intensity is half of the laser intensity at the location where the intensity is highest The area connected to is the irradiation area.

The laser light used for crystallization needs to be absorbed by the silicon film and generate heat.
Lasers shorter than nm are required, and shorter wavelengths have better absorption efficiency. In the present invention, the crystallization step was performed with a XeCl excimer laser at a wavelength of 308 nm.
Any laser having a wavelength of 500 nm or less may be used.
An excimer laser such as F or KrF or an Ar laser may be used. Further, although the description has been made using the pulse laser, a continuous wave (CW) laser may be used.

Although a concave lens is used as a lens for providing the following light amount distribution, it has been confirmed that the same effect can be obtained by appropriately designing the light amount distribution and manufacturing an exposure mask even if a convex lens is used. .

As the gate insulating film, SiO ₂ by plasma CVD using TEOS was used. In addition, low pressure CVD, remote plasma CVD, normal pressure CV
D, ECR-CVD, etc. can also be used. Further, a high pressure oxidation, a plasma oxide film, or the like can be used.

Although a molybdenum-tungsten alloy film is used as the gate electrode material, pure Al can be used, or Si, Cu, Ta, Sc, Zr, etc. can be selected for Al, or a plurality of them can be selected. It is also possible to use materials added in small amounts. Regarding the activation of the implanted ions, it is possible to add no process such as annealing by self-activation by simultaneously implanted hydrogen.However, in order to achieve more reliable activation, annealing at 400 ° C or higher or excimer laser Irradiation or local heating by RTA (Rapid Thermal Anneal) may be performed.

Although SiO ₂ is used as the interlayer insulating film by plasma CVD using TEOS, other methods such as SiO ₂ by AP-CVD (Atmospheric Pressure CVD), LTO (Low Temperature Oxide), EC
It goes without saying that SiO ₂ or the like by R-CVD may be used. In addition, silicon nitride, tantalum oxide, aluminum oxide, or the like can be used as a material, and a stacked structure of these thin films may be used. Although an aluminum-zirconium alloy film was used as a material for the source and drain electrodes, a metal such as aluminum (Al), tantalum (Ta), molybdenum (Mo), chromium (Cr), titanium (Ti), or an alloy thereof is used. Or poly-Si or poly-SiGe alloy or IT containing a large amount of impurities.
A transparent conductive layer such as O may be used.

Although phosphorus was used as an impurity, P-channel and N-channel TFTs were selectively formed by selectively using boron or arsenic as an acceptor and aluminum or the like other than phosphorus as a donor. CM
Needless to say, an OS circuit can be formed on a substrate.

An EL display device is capable of manufacturing, driving, and displaying an EL pixel and a driving circuit by using a TFT by using the TFT of the present invention. Has the same effect on both.

(Embodiment 1) Hereinafter, a method for manufacturing a semiconductor thin film, a TFT, a liquid crystal display device, and an EL display device according to the present invention will be described.

First, as shown in FIG. 1, in order to prevent impurities from diffusing from the substrate 1, for example, TEO
300 nm thick SiO ₂ underlayer ₂ by S-CVD
Is formed. Note that the thickness of the base film 2 is not limited to 300 nm, and various settings can be made. Although glass is used as the substrate 1 in the present embodiment, a plastic or a film may be used. As the base film 2, a silicon nitride film can also be used. SiO ₂
There is no problem if the thickness of the film and the silicon nitride film is 200 nm or more. In the case of 200 nm or less, the glass substrate 1
Impurity diffuses into the silicon layer 3 and the V
Problems such as t shift occur. In addition, it has been confirmed that by forming a porous film such as an SOG (spin-on-glass) film in addition to the base film 2, a silicon crystal having a larger grain size grows. The SOG film is not based on organic or inorganic.

Next, an amorphous silicon film 3 is formed by a plasma CVD method (FIG. 1). In forming the amorphous silicon film 3, a low pressure CVD method or sputtering may be used. The thickness of the amorphous silicon film 3 is 3
The range from 0 nm to 90 nm is suitable, and in the present embodiment, it is 70 nm.

Next, a photosensitive positive resist film 4 was formed on the substrate by spin coating, and prebaked. FIG.
As shown in FIG. 3, the resist film 4 was irradiated with ultraviolet light 6. In the optical path, an exposure mask 7 in which phase shift patterns each having a step formed on quartz were arranged in a strip shape was placed. The phase shift mask is not limited to quartz, as long as it can shift the phase of transmitted light by being light-transmissive, making a difference in film thickness or making a difference in refractive index. In addition, the ultraviolet light 6 having a laser beam has a greater phase shift effect. The ultraviolet light 6 transmitted through the phase shift pattern is applied to the resist film with the intensity distribution of the light. By developing and post-baking the resist, a thin resist film thickness distribution pattern was formed in a portion where the exposure amount was small and in a portion where the exposure amount was large. The photosensitive resist film may be positive or negative. However, in the case of a negative, the exposure mask is designed so that the light amount distribution is reversed. From above, dry etching was performed using a gas such as BCl3 mixed with a slight amount of oxygen.
As shown by the dotted line in c), the etching progressed, and an amorphous silicon film 8 having irregularities was formed. The exposure light amount and the like were designed so that the film thickness of the thickest part was 60 nm and the film thickness of the thinnest part was 30 nm, and the unevenness was formed. In order to remove hydrogen in the formed amorphous silicon film 8, a heat treatment was performed at 450 ° C. for 1 hour as a dehydrogenation step. Note that when a film formation method in which hydrogen is not contained in the amorphous silicon film or a small amount thereof is used, such as sputtering, a dehydrogenation treatment is not necessary.

Next, a laser annealing apparatus (E) shown in FIG.
The polycrystalline silicon film is formed by melting and crystallizing the amorphous silicon film 8 using an LA device. The laser annealing apparatus can move the substrate 1 vertically and horizontally. When the amorphous silicon film 8 is irradiated with the laser beam 12 at room temperature with an energy density of about 160 mJ / cm ² or more, melting and crystallization occur, and a polycrystalline silicon film is formed. In this embodiment, one pulse of laser light 12 is irradiated at an energy density of 370 mJ / cm ² using a XeCl pulse laser (wavelength 308 nm) 9. Since the XeCl pulse laser 9 currently used has insufficient output and cannot irradiate the entire substrate surface at once, the laser light 12 is shaped by the unit of the screen to be produced and the peripheral drive circuit, and the laser light 12 is formed. Irradiated.

The TFT was designed so as to be selectively arranged in a place having a film thickness distribution. A large grain silicon crystal grew in a portion where the film thickness distribution had a gradient. When the particle size of the large grain silicon crystal was measured with an atomic force microscope (AFM) and a TEM, the grain size was found to be approximately 5
μm, and about 2 μm in the depth direction. Also, there were no large defects in the grains. Since the grain size of the conventional polycrystalline silicon thin film formed without a film thickness distribution was 300 nm or less, it can be seen that the grain size and film quality of the silicon thin film were improved. Conventionally, the positions of crystal grains are random, but the method of the present embodiment has an effect that crystals having a large grain size grow at fixed positions having a film thickness distribution.

By fixing the positional relationship between the substrate and the irradiation light, that is, keeping the substrate and the optical axis stationary and irradiating several pulses, the defects of the silicon crystal were reduced. By irradiating 10 or more pulses, preferably 100 or more pulses,
Furthermore, the defects of the silicon crystal were reduced, and the grain size was increased.
When the semiconductor film was manufactured using the semiconductor film subjected to the pulse irradiation many times, the characteristics of the TFT were improved. Also, in the case of scanning irradiation in which a plurality of pulses are irradiated while overlapping laser pulses while changing the relative position between the optical axis and the substrate,
Irradiation with 90% overlap had slightly more crystal defects and lower characteristics than when irradiation was performed with the substrate and the optical axis stationary, but the crystal grain size was lower than when there was no conventional film thickness distribution. The diameter was large and the TFT characteristics were also improved. Similar results were obtained in the following embodiments.

The conventional laser annealing method has a 90% overlap in scanning irradiation, does not use an exposure mask, and has an energy density of 330 mJ / cm ^2.
It is. Hereinafter, description will be made using a semiconductor thin film obtained by irradiating only one pulse.

Next, since a large number of dangling bonds are formed in the polycrystalline silicon film, the film is left in a hydrogen plasma, for example, at 450 ° C. for 2 hours in a hydrogenation step. The hydrogen concentration is about 2 × 10 ²⁰ atoms · cm ⁻³ .

Thereafter, the following steps are carried out similarly to the conventional TFT (FIG. 5). First, the polycrystalline silicon layer is patterned by photo and dry etching. Next, for example, TE
SiO ₂ is formed as a gate insulating film 18 to a required thickness, for example, 100 nm by OS-CVD. Next, a molybdenum-tungsten alloy film is sputtered and patterned into a predetermined shape by etching to form a gate electrode 19.

After that, phosphorus is implanted at a low concentration by an ion doping apparatus using the gate electrode 19 as a mask.
A low concentration implantation region 17 is formed. Next, a resist pattern is formed on the gate metal 19 and 1 μm from both ends thereof by photolithography. Next, high-concentration phosphorus is implanted into the source and drain regions using the resist as a mask by an ion doping apparatus.

Further, an interlayer insulating film 20 made of silicon oxide was formed by the TEOS-CVD method, and annealing was performed at 550 ° C. in a nitrogen atmosphere to activate the implanted ions. Next, a contact hole reaching the source region or the drain region 16 of the polycrystalline silicon film is opened in the interlayer insulating film 20 and the gate insulating film 18 by covering the gate metal 19 and etching. Next, the titanium film and the aluminum-zirconium alloy film 22 are sputtered and patterned into a predetermined shape by etching to form the source electrode and the drain electrode 22.
Through the above process, an n-type TFT is completed. p-type T
If FT is required, use photolithography and B
What is necessary is just to add a doping process.

When a TFT is manufactured by the above manufacturing method, the semiconductor layer becomes a TFT including the large-diameter silicon crystal 23 as shown in FIG.

The mobility of the TFT was 100 cm ² / V · s when formed by the conventional laser annealing method. However, in the TFT of this embodiment, the mobility was improved to 160 cm ² / V · s. Inspection for checking the durability in a large number of switching operations, that is, applying a voltage of 5 V between the source and the drain, 500 kHz for 1500 hours, turning on the gate voltage,
In the test where OFF is repeated, the conventional TFT has 5 times the initial value.
Although the mobility decreased to about 0%, the TF of the present embodiment
T was 70% or more, and the reliability was improved.

Next, the following steps are performed on the TFT array substrate to complete the liquid crystal display device shown in FIG. A counter electrode formed of a transparent conductive film such as ITO is formed on one main surface of an insulating substrate, for example, a glass substrate 1 of product number 1737 of Corning, and a counter substrate 25 is formed. Also,
A polyimide film 29 is formed as a flattening film on the opposite surface side of the array substrate, and a polarizing plate is adhered on the opposite surface side. A liquid crystal 30 is sealed between the array substrate and the opposite substrate.

As the characteristics of the TFT array have been improved and the deterioration thereof has been reduced, defects in the driving circuit of the liquid crystal display device have been reduced, and problems such as unevenness in screen luminance have been reduced. While the defect rate of the drive circuit when using the conventional TFT was 15%, the liquid crystal display device of the present embodiment reduced the defect rate to 12%, and the defective rate of screen luminance unevenness was 7%. On the other hand, in the liquid crystal display device of the present embodiment, it was reduced to 5%.

FIG. 7 is a cross-sectional view for explaining an electroluminescence (EL) display device of the present invention and a method for manufacturing the same. Although the detailed manufacturing procedure is omitted,
According to the method of the first embodiment, the TFTs are formed integrally with a CMOS driving circuit for driving each pixel TFT at the same time as forming a switching TFT and a current driving TFT in a matrix in each pixel. An ITO electrode 31 is formed on the TFT array substrate as a transparent electrode.

Thereafter, the space between the ITO patterns is filled with a resin black resist, and the light shielding layer 36 is formed by photolithography. For example, a red, green, and blue luminescent material is patterned and applied using an inkjet printing apparatus to form a luminescent layer.

Next, the hole injection layer 32 is formed by vacuum deposition of polyvinyl carbazole. Finally, for example, Al
The reflection pixel electrode 34 of Li is formed, and the electroluminescence display device is completed. The operation is as follows.

First, when a display signal is applied to the signal line when a pulse signal is applied to the scanning line so that the switching TFT is turned on, the driving TFT is turned on and a current flows from the current supply line, and the electroluminescence is emitted. The cell emits light.

In the above description, a polydialkylfluorene derivative was used as the electroluminescent material. However, other organic materials, for example, other polyfluorene-based materials or polyphenylvinylene-based materials, or inorganic materials can be used. Needless to say. In addition, as a method for forming the electroluminescent material, a method such as a coating method such as spin coating, vapor deposition, or a discharge forming method using inkjet may be used.

In the switching of the EL display device, the T of the present invention is used.
By using FT, the screen luminance nonuniformity defect rate was 8% in the past, whereas in the EL display device of the present embodiment, it was reduced to 6%. In addition, when the switching was performed for a long time or a large number of times, the deterioration of the TFT characteristics resulted in poor image quality. However, the conventional defective rate was reduced from 15% to 12%. The luminance is 300 cd in the related art when a voltage of 5 V is applied.
/ M ² and which was of the, in the EL display device of the present embodiment was improved to 380 cd / m ^2.

Embodiment 2 Hereinafter, a method for manufacturing a semiconductor thin film, a thin film transistor, a method for manufacturing a thin film transistor, a liquid crystal display device, a method for manufacturing a liquid crystal display device, an EL display device, and an EL display device according to Embodiment 2 of the present invention will be described. A method of manufacturing the device will be described.

First, as shown in FIG.
In the same manner as described above, the base film 2 and the amorphous silicon film 3 are formed on the substrate.

Next, a photosensitive negative resist film 4 was formed on the substrate by spin coating, and prebaked. FIG.
As shown in FIGS. 9 and 9, the resist film 4 was irradiated with ultraviolet light 6. An exposure mask 38 having circular light transmitting portions 39 provided in an array was placed on the optical path. This is developed to form a resist part 40 having a circular pattern. The photosensitive resist film may be positive or negative. However, in the case of a positive pattern, a mask that does not transmit light only in a circular pattern is used. The exposure mask 38 also has a photo key pattern 50, which is simultaneously exposed and developed to form a photo key pattern resist portion 42. Next, the photo key portion 42 is mainly focused and irradiated with infrared light 61 to give heat. The light amount is adjusted so as to be a temperature corresponding to post-baking, for example, 140 ° C., and irradiation is performed for a predetermined post-baking time. By this step, the resist shape is stabilized only in the photo key pattern portion 42. This method can be used in addition to the key pattern, and can form a resist pattern having a sharp shape and a smooth shape. Next, the entire substrate was heated above the softening temperature of the resist. Typically, the temperature was set to about 150 to 400 ° C. As a result, the resist except the photo key portion 42 was softened, and the circular resist portion 40 was changed to a spherical convex resist portion 41 due to surface tension.

As shown in FIG. 10, when dry etching was performed from above, etching proceeded in accordance with the unevenness on the surface, and an amorphous silicon film 8 having unevenness was formed. The exposure light amount and the like were designed so that the film thickness of the thickest part was 60 nm and the film thickness of the thinnest part was 30 nm, and the unevenness was formed. In order to remove hydrogen in the formed amorphous silicon film 8, a heat treatment was performed at 450 ° C. for 1 hour as a dehydrogenation step.

Next, a laser annealing apparatus (E) shown in FIG.
The polycrystalline silicon film is formed by melting and crystallizing the amorphous silicon film 8 using an LA device. One pulse of laser light was applied.

Since the XeCl pulse laser currently used has insufficient output and cannot irradiate the entire substrate surface at one time, the laser beam 12 is shaped in units of the peripheral drive circuit where high characteristics are required. Then, a laser beam was irradiated. A mask was arranged near the substrate so as not to irradiate the pixel portion other than the peripheral circuit portion, for example, and the selected region was irradiated with laser light. In this embodiment mode, one pulse of laser light is irradiated at an energy density of 370 mJ / cm ² using a XeCl pulse laser (wavelength 308 nm) 9.

Further, the TFT was designed so as to be selectively arranged in a place having a film thickness distribution. A large grain silicon crystal grew in a portion where the film thickness distribution had a gradient. Next, in order to crystallize a non-irradiated portion, for example, a portion where a pixel TFT is formed, an overlap 90%
While scanning the substrate with, laser light was irradiated. The energy density is lower than in the case where the peripheral circuit portion is selectively irradiated. In this embodiment mode, irradiation is performed at 300 J / cm ² . Note that the TFT in the pixel portion does not require high characteristics, and therefore does not have a film thickness distribution pattern of an amorphous silicon film.

When the grain size of the large crystal silicon crystal in the peripheral circuit forming portion was measured by an atomic force microscope (AFM) and a TEM, the grain size was about 6 μm in the cross-sectional direction of the figure and about 4 μm in the depth direction. there were. Also, there were no large defects in the grains. Since the grain size of the conventional polycrystalline silicon thin film formed without a film thickness distribution was 300 nm or less, it can be seen that the grain size and film quality of the silicon thin film were improved. Conventionally, the positions of crystal grains are random, but the method of the present embodiment has an effect that crystals having a large grain size grow at fixed positions having a film thickness distribution. Since the pattern for the photo key is formed simultaneously with the formation of the film thickness distribution pattern, the TFT can be formed more accurately at the position of the large grain crystal.

The conventional laser annealing method has a 90% overlap in scanning irradiation, does not use an exposure mask, and has an energy density of 330 mJ / cm ^2.
It is. Hereinafter, description will be made using a semiconductor thin film obtained by irradiating only one pulse.

Hereinafter, through the same steps as in the first embodiment,
A TFT was manufactured.

When a TFT is manufactured by the above-described manufacturing method, the semiconductor layer becomes a TFT including the large-diameter silicon crystal 23 as shown in FIG.

The mobility of the TFT was 100 cm ² / V · s when formed by the conventional laser annealing method. However, in the TFT of the present embodiment, the mobility was improved to 300 cm ² / V · s. Inspection for checking the durability in a large number of switching operations, that is, applying a voltage of 5 V between the source and the drain, 500 kHz for 1500 hours, turning on the gate voltage,
In the test where OFF is repeated, the conventional TFT has 5 times the initial value.
Although the mobility decreased to about 0%, the TF of the present embodiment
At T, it was 87% or more, and the reliability was improved.

Next, the same steps as in the first embodiment are performed on the TFT array substrate, and the liquid crystal display device shown in FIG. 6 is completed. Due to the improvement in characteristics and the decrease in deterioration of the TFT array, defects in the driving circuit of the liquid crystal display device have been reduced, and defects such as uneven screen brightness have been reduced. The defect rate of the driving circuit using the conventional TFT was 15%, while the liquid crystal display device of the present embodiment reduced the defect rate of the screen luminance unevenness to 7%, which was reduced to 4%. On the other hand, in the liquid crystal display device of the present embodiment, it was reduced to 2%.

FIG. 7 is a sectional view for explaining an electroluminescence (EL) display device of the present invention and a method for manufacturing the same. Using a TFT substrate prepared using the above manufacturing method, and using the same steps as those in Embodiment 1,
The EL display device is completed.

In the switching of the EL display device, the T of the present invention is used.
By using FT, the screen luminance unevenness defect rate was 8% in the past, whereas in the EL display device of the present embodiment, it was reduced to 2%. In addition, when the switching was performed for a long time or a large number of times, the deterioration of the TFT characteristics resulted in poor image quality. However, the conventional failure rate was reduced from 15% to 5%. The luminance is 300 cd / conventional when a voltage of 5 V is applied.
m ² , in the EL display device of the present embodiment,
It improved to 450 cd / m ² .

Embodiment 3 Hereinafter, a method for manufacturing a semiconductor thin film, a thin film transistor, a method for manufacturing a thin film transistor, a liquid crystal display device, a method for manufacturing a liquid crystal display device, an EL display device, and an EL display device according to Embodiment 3 of the present invention will be described. Will be described.

First, as shown in FIG.
In the same manner as described above, formation of the base film 2 and the amorphous silicon film 3, formation of the photosensitive negative resist film 4, and prebaking were performed on the substrate. As shown in FIGS. 11 and 9, the resist film 4 was irradiated with ultraviolet light 6. An exposure mask 38 having a diamond-shaped light transmitting portion 45 provided in an array was placed on the optical path. This is developed to form a diamond-shaped resist portion 4
0 is formed. It is important that the shape is at least partially pointed and is not limited to a diamond. The photosensitive resist film may be positive or negative. However, in the case of a positive pattern, a mask that does not allow light to pass through only the diamond pattern is used. The exposure mask 38 also has a photo key pattern 50, which is simultaneously exposed and developed to form a photo key pattern resist portion 42. Thereafter, in the same process as in the first embodiment, post-baking of only the photo key portion is performed, and then annealing of the entire substrate is performed to soften the diamond-shaped resist pattern to form a diamond-shaped pattern having a gentle step 41. . Next, an amorphous silicon film 8 having irregularities is formed by dry etching. The step portion of the unevenness is formed smoothly, and the length of the step portion is 0.5 μm or more.
It is 5 μm. Also, for the negative resist film,
Exposure mask 5 in which a portion having a high transmittance is formed in a diamond shape shown in FIG.
Also, a diamond pattern having a gentle step 41 shown in FIG. 12 can be formed by a method of forming a resist film thickness distribution using 8 and etching.

Next, a dehydrogenation step and a laser annealing step are performed in the same manner as in the first embodiment. As shown in FIG.
Starting from the tip of the diamond-shaped pattern, a large grain silicon crystal 23 is formed. The large-diameter silicon crystal had a particle size of 10 μm in length and 6 μm in depth. When the thick diamond-shaped part has the lowest temperature and solidifies from melting, solidification starts from the tip of the diamond, crystallization proceeds according to the film thickness distribution, and even if crystallization reaches a flat part. Since the direction in which the crystallization proceeds is defined, the crystallization proceeds further in a directional manner, and a large-grain crystal 23 is formed. Next, laser light irradiation by scanning irradiation is performed in the same manner as in Embodiment 1, and crystallization of the entire surface is completed.

Hereinafter, through the same steps as in the first embodiment,
A TFT was manufactured.

When a TFT is manufactured by the above-described manufacturing method, the semiconductor layer becomes a TFT including the large-diameter silicon crystal 23 as shown in FIG.

The mobility of the TFT was 100 cm ² / V · s when formed by the conventional laser annealing method. However, in the TFT of the present embodiment, the mobility was improved to 380 cm ² / V · s. Inspection for checking the durability in a large number of switching operations, that is, applying a voltage of 5 V between the source and the drain, 500 kHz for 1500 hours, turning on the gate voltage,
In the test where OFF is repeated, the conventional TFT has 5 times the initial value.
Although the mobility decreased to about 0%, the TF of the present embodiment
T was 92% or more, and the reliability was improved.

Next, the same steps as in the first embodiment are performed on the TFT array substrate, and the liquid crystal display device shown in FIG. 6 is completed. Due to the improvement in characteristics and the decrease in deterioration of the TFT array, defects in the driving circuit of the liquid crystal display device have been reduced, and defects such as uneven screen brightness have been reduced. While the defect rate of the drive circuit when using the conventional TFT was 15%, the liquid crystal display device of the present embodiment reduced the defect rate to 3% and the screen luminance unevenness defect rate was 7%. On the other hand, in the liquid crystal display device of the present embodiment, it was reduced to 2%.

FIG. 7 is a sectional view for explaining an electroluminescence (EL) display device of the present invention and a method for manufacturing the same. An EL display device is completed using a TFT array substrate manufactured by the above manufacturing method and using the same steps as in the first embodiment.

In the switching of the EL display device, the T of the present invention is used.
By using the FT, the unevenness rate of the screen luminance unevenness was 8% in the past, but was reduced to 1.5% in the EL display device of the present embodiment. In addition, when the switching was performed for a long time or a large number of times, the deterioration of the TFT characteristics resulted in poor image quality, but the defect rate was reduced from the conventional 15% to 3%. In addition, the luminance is 300 c in the related art when a voltage of 5 V is applied.
The d / m ² was improved to 470 cd / m ^{2 in} the EL display device of the present embodiment.

Embodiment 4 Hereinafter, a method for manufacturing a semiconductor thin film, a thin film transistor, a method for manufacturing a thin film transistor, a liquid crystal display device, a method for manufacturing a liquid crystal display device, an EL display device, and an EL display device according to Embodiment 4 of the present invention will be described. Will be described.

First, as shown in FIG.
In the same manner as in the above, a base film 2 and an amorphous silicon film 3 were formed on the substrate, a photosensitive positive resist film 4 was formed, and prebaking was performed. As shown in FIG. 8, the resist film 4 was irradiated with ultraviolet light 6. As shown in FIG. 13, an exposure mask 38 in which phase shift patterns each having a circular step on a quartz plate 48 are arranged in an array is placed on the optical path. As shown in FIG. 13, the ultraviolet light 6 transmitted through the phase shift pattern is applied to the resist film with the intensity distribution of light. The exposure mask 38 has a pattern 5 for a photo key.
There is also a 0, which is exposed and developed at the same time, and as shown in FIG. 9C), a resist portion 42 of a photo key pattern having a clear step portion and a circular resist pattern 41 having a smooth step shape are formed.

As a method of giving a light amount distribution to photo exposure, in addition to the method of using the phase shift mask described in the fourth embodiment, a spatial change in the area and the number of openings shown in FIG. A method using an exposure mask 58 provided. The method using a lens array shown in FIG. 15 can similarly provide a smooth light amount distribution.

When dry etching was performed from above, etching proceeded as shown by the dotted line in FIG. 3C according to the unevenness of the surface, and an amorphous silicon film 8 having unevenness was formed. The exposure light amount and the like were designed so that the film thickness of the thickest part was 60 nm and the film thickness of the thinnest part was 30 nm, and the unevenness was formed. The uneven steps follow the light intensity distribution,
It is formed smoothly and the length of the step is 0.5μ
m or more and 1.5 μm in the present embodiment.
In order to remove hydrogen in the formed amorphous silicon film 8, a heat treatment was performed at 450 ° C. for 1 hour as a dehydrogenation step.

Next, the amorphous silicon film 8 is melted and crystallized by a laser annealing apparatus (ELA apparatus) shown in FIG. 14 to form a polycrystalline silicon film. One pulse of laser light was applied. An exposure mask 52 including the area of the optical path of the laser light 12 was arranged near the substrate. As shown in FIG. 15, a convex lens structure 55 is formed in an array on the exposure mask 52, and a light amount distribution is generated. Exposure mask 5
2, a positioning key pattern 53 was formed, and positioning was performed on the photo key pattern 43. The light intensity distribution was designed so that the light intensity was weak in the thick part and the light intensity was strong in the thin part. It is. The portion with the light intensity distribution gradient is the TFT
In order to correspond to the formation position, the distance from the substrate and the curvature of the lens are such that the light amount distribution is from 250 mJ / cm ² to 380 mJ / cm ^2.
The laser beam 12 was designed to have a gradient in the range of cm ² and to have an appropriate gradient in the location distribution of the laser beam 12 on the substrate surface. As a result, the grain size of the silicon crystal was larger than that in the case where the large grain crystal was formed only by the film thickness distribution. The particle size is about 12 μm in the cross-sectional direction of the figure and about 8 μm in the depth direction.
Met. Also, there were no large defects in the grains. The polycrystalline silicon thin film formed without the conventional film thickness distribution has a grain size of 3
Since it was not more than 00 nm, it can be seen that the grain size and film quality of the silicon thin film were improved. Conventionally, the positions of the crystal grains were random, but in the method of the present embodiment,
There is an effect that a crystal having a large grain size grows at a predetermined position having a film thickness distribution, and since a pattern for a photo key is formed at the same time as forming a film thickness distribution pattern of an amorphous silicon film, more accurate. T at the position of large grain crystal
An FT can be formed. Further, an exposure apparatus for a photo step for forming a film thickness difference of an amorphous silicon film and a laser annealing apparatus for a crystallization step were performed by the same apparatus. Further, other photo steps can be performed by the same apparatus. As a result, the cost was reduced by reducing the number of devices.

Through the same steps as in the first embodiment, T
An FT was formed.

When a TFT is manufactured by the above-described manufacturing method, as shown in FIG. 16, a TFT in which a channel portion of a semiconductor layer is included in a large-grain silicon crystal is obtained.

The mobility of the TFT was 100 cm ² / V · s when formed by the conventional laser annealing method. However, in the TFT of the present embodiment, the mobility was improved to 430 cm ² / V · s. Inspection for checking the durability in a large number of switching operations, that is, applying a voltage of 5 V between the source and the drain, 500 kHz for 1500 hours, turning on the gate voltage,
In the test where OFF is repeated, the conventional TFT has 5 times the initial value.
Although the mobility decreased to about 0%, the TF of the present embodiment
At T, it was 98% or more, and the reliability was improved.

Next, the same steps as in the first embodiment are performed on the TFT array substrate, and the liquid crystal display device shown in FIG. 6 is completed.

As the characteristics of the TFT array have been improved and the deterioration thereof has been reduced, defects in the driving circuit of the liquid crystal display device have been reduced, and defects such as unevenness in screen luminance have been reduced. While the defect rate of the drive circuit when using the conventional TFT was 15%, the liquid crystal display device of the present embodiment reduced the defect rate to 1.5%, and the screen luminance unevenness defect rate was 7%. On the other hand, in the liquid crystal display device of the present embodiment, it was reduced to 0.5%.

FIG. 7 is a sectional view for explaining an electroluminescence (EL) display device of the present invention and a method for manufacturing the same. TFT manufactured using the above manufacturing method
Using an array and in accordance with the method of Embodiment 1, E
An L display device was manufactured.

For switching of the EL display device, the T of the present invention is used.
By using the FT, the unevenness ratio of the screen luminance unevenness was 8% in the past, but it was reduced to 0.4% in the EL display device of the present embodiment. In addition, the deterioration in TFT characteristics when switching was performed for a long time or a large number of times resulted in poor image quality. However, the defect rate was reduced from 15% in the past to 4%. In addition, the luminance is 300 c in the related art when a voltage of 5 V is applied.
The d / m ² was improved to 560 cd / m ^{2 in} the EL display device of the present embodiment.

Embodiment 5 Hereinafter, a method for manufacturing a semiconductor thin film, a thin film transistor, a method for manufacturing a thin film transistor, a liquid crystal display device, a method for manufacturing a liquid crystal display device, an EL display device, and an EL display device according to Embodiment 5 of the present invention will be described. Will be described.

First, as shown in FIG.
In the same manner as described above, the base film 2 and the amorphous silicon film 3 are formed on the substrate.

Using the same steps as in the second embodiment shown in FIGS. 14, 13, 3, 9, and 10, a resist film 4, a circular resist pattern, and a photo key resist pattern 42 are formed. Key resist pattern 42
Post-baking was performed only selectively using light. Next, the entire substrate was heated to a temperature equal to or higher than the softening temperature to form a circular pattern resist portion having a smooth step.

From above, dry etching was performed in the same manner as in the second embodiment, an amorphous silicon film 8 having smooth irregularities was formed, and a dehydrogenation step was performed.

Next, the amorphous silicon film 8 is melted and crystallized by a laser annealing apparatus (ELA apparatus) shown in FIG. 14 to form a polycrystalline silicon film. One pulse of laser light was applied. An exposure mask 52 including the area of the optical path of the laser light 12 was arranged near the substrate. As shown in FIG. 18, openings 57 having different areas and different spatial densities are formed in an array on the exposure mask 58, and a light quantity distribution is generated. The amount of light transmitted through the exposure mask was designed so that the intensity could be changed smoothly in a strip shape. The light intensity distribution is designed so that the light intensity is weak in the thick part and the light intensity is strong in the thin part. In addition, the method of changing the intensity of the laser light 12 in a band shape may use a phase shift mask, or may be formed by using a convex or reverse convex lens, and in shaping the laser light 12, It may be formed by a commonly used optical system. A positioning key pattern 56 is formed on the exposure mask 58, and positioning was performed with respect to the photo key pattern 43. By irradiating the amorphous silicon film, whose thickness changes in a spherical shape, with a laser beam having a light quantity distribution in a band shape, a large-diameter silicon crystal grows in one direction starting from the point where the film thickness is maximum. In addition, the positioning accuracy is further improved. By forming the light intensity distribution of the laser beam 12 in a wider range than the range having the slope of the spherical surface of the amorphous silicon film, the silicon crystal having a larger grain size than the case where the laser beam is irradiated with a uniform intensity. Can be formed. The opening was designed such that the portion having the gradient of the light amount distribution corresponded to the TFT formation position. The opening was designed such that the light quantity distribution had a gradient in the range of 250 mJ / cm ² to 380 mJ / cm ² , and the location distribution of the laser beam 12 on the substrate surface had an appropriate gradient. The particle diameter was about 15 μm in the direction where the gradient of the laser light was shown, and was about 8 μm in the depth direction. Also, there were no large defects in the grains.
Since the grain size of the conventional polycrystalline silicon thin film formed without a film thickness distribution was 300 nm or less, it can be seen that the grain size and film quality of the silicon thin film were improved. Conventionally, the positions of the crystal grains are random, but the method of the present embodiment has the effect that crystals having a large grain size grow at clearly defined positions where the film thickness distribution and the light amount distribution match. In addition, since a pattern for a photo key is formed simultaneously with the formation of a film thickness distribution pattern of an amorphous silicon film, a TFT can be formed at a position of a large grain crystal with higher accuracy.

Through the same steps as in the first embodiment, T
An FT was formed.

When a TFT is manufactured by the above-described manufacturing method, as shown in FIG. 16, a TFT having a channel portion and an LDD portion of a semiconductor layer in a grain of a large grain silicon crystal is obtained.

The mobility of the TFT was 100 cm ² / V · s when formed by a conventional laser annealing method. However, in the TFT of the present embodiment, the mobility was increased to 450 cm ² / V · s. Inspection for checking the durability in a large number of switching operations, that is, applying a voltage of 5 V between the source and the drain, 500 kHz for 1500 hours, turning on the gate voltage,
In the test where OFF is repeated, the conventional TFT has 5 times the initial value.
Although the mobility decreased to about 0%, the TF of the present embodiment
T was 99% or more, and the reliability was improved.

Next, the same steps as in the first embodiment are performed on the TFT array substrate, and the liquid crystal display device shown in FIG. 6 is completed.

As the characteristics of the TFT array have been improved and the deterioration thereof has been reduced, defects in the driving circuit of the liquid crystal display device have been reduced, and defects such as unevenness in screen luminance have been reduced. While the defect rate of the driving circuit when using the conventional TFT was 15%, the liquid crystal display device of the present embodiment reduced the defect rate to 1%, and the screen luminance unevenness defect rate was 7% in the related art. On the other hand, in the liquid crystal display device of the present embodiment, it was reduced to 0.3%.

FIG. 7 is a cross-sectional view for explaining an electroluminescence (EL) display device of the present invention and a method of manufacturing the same. A TFT array manufactured by using the above-described manufacturing method is used. In accordance with the method, EL
A display device was manufactured.

The switching of the EL display device according to the present invention,
By using FT, the screen luminance unevenness defect rate was 8% in the past, whereas in the EL display device of the present embodiment, it was reduced to 0.3%. In addition, the deterioration in TFT characteristics when switching was performed for a long time or a large number of times resulted in poor image quality. However, the defect rate was reduced from 15% in the past to 4%. In addition, the luminance is 300 c in the related art when a voltage of 5 V is applied.
The d / m ² was improved to 580 cd / m ^{2 in} the EL display device of the present embodiment.

Embodiment 6 Hereinafter, a method for manufacturing a semiconductor thin film, a thin film transistor, a method for manufacturing a thin film transistor, a liquid crystal display device, a method for manufacturing a liquid crystal display device, an EL display device, and an EL display device according to Embodiment 6 of the present invention will be described. Will be described.

First, as shown in FIG.
In the same manner as in the above, a base film 2 and an amorphous silicon film 3 were formed on the substrate, a photosensitive positive resist film 4 was formed, and prebaking was performed. As shown in FIG. 20, the resist film 4 was irradiated with ultraviolet light 6. In the optical path, an opening (light transmitting portion) having the area and density shown in FIG.
An exposure mask 58 on which 57 is disposed was placed. The ultraviolet light 6 transmitted through the exposure mask 58 having the opening is irradiated on the resist film with the intensity distribution of light. This was developed and post-baked to form a thick resist pattern in a portion where the exposure amount was large and a thin resist film in a portion where the exposure amount was small. In accordance with the light transmission pattern of the exposure mask 58, a part of the thick part is formed into a pointed shape, in this case, a diamond-shaped pattern, and the step part is formed so that the film thickness changes smoothly. did. The photosensitive resist film may be positive or negative. However, in the case of a negative, the exposure mask is designed so that the light amount distribution is reversed as shown in FIG. Perform dry etch from above,
Etching proceeded in accordance with the surface irregularities of the amorphous semiconductor film, and an amorphous silicon film having irregularities was formed. The thickness of the thickest part is 60 nm, and the thickness of the thinnest part is 30.
The amount of exposure light and the like were designed so as to be nm, and irregularities were formed. In order to remove hydrogen in the formed amorphous silicon film, a heat treatment was performed at 450 ° C. for 1 hour as a dehydrogenation step.

Next, the amorphous silicon film 8 is melted and crystallized by a laser annealing apparatus (ELA apparatus) shown in FIG. 14 to form a polycrystalline silicon film. One pulse of laser light was applied. An exposure mask 58 including the area of the optical path of the laser light 12 was arranged near the substrate. As shown in FIGS. 20 and 21, openings 57 having different areas and different spatial densities are formed in an array on the exposure mask 58.
A light quantity distribution occurs. As shown in FIGS. 18 and 21, the amount of light transmitted through the exposure mask was designed so that the intensity gradually changed in a band. A positioning key pattern 56 is formed on the exposure mask 58, and positioning was performed with respect to the photo key pattern 43. As shown in FIG. 18, openings having different areas and different spatial densities are shown in FIG. 18 with respect to an amorphous silicon film in which a part of a thick portion has a pointed shape and a film thickness of a step portion changes gradually. By irradiating the laser beam 12 having a light quantity distribution in a band shape using the exposure mask 58 having the portion 57, as shown in FIG. The crystal grows and the positioning accuracy is further improved.
The light intensity distribution is designed so that the light intensity is weak in the thick part and the light intensity is strong in the thin part. By forming the light intensity distribution of the laser beam 12 in a wider range than the range having the slope of the spherical surface of the amorphous silicon film, the silicon crystal having a larger grain size than the case where the laser beam is irradiated with a uniform intensity. Can be formed. The opening was designed such that the portion having the gradient of the light amount distribution corresponded to the TFT formation position. The opening has a light quantity distribution of 250 mJ / c.
m ² to 380 mJ / cm ² ,
The laser beam 12 was designed so that the location distribution of the laser beam 12 on the substrate surface had an appropriate gradient. The particle diameter was about 15 μm in the direction where the gradient of the laser light was shown, and was about 8 μm in the depth direction.
Also, there were no large defects in the grains. Since the grain size of the conventional polycrystalline silicon thin film formed without a film thickness distribution was 300 nm or less, it can be seen that the grain size and film quality of the silicon thin film were improved. Conventionally, the positions of the crystal grains are random, but the method of the present embodiment has the effect that crystals having a large grain size grow at clearly defined positions where the film thickness distribution and the light amount distribution match. In addition, since a pattern for a photo key is formed simultaneously with the formation of a film thickness distribution pattern of an amorphous silicon film, a TFT can be formed at a position of a large grain crystal with higher accuracy.

Through the same steps as in the first embodiment, T
An FT was formed.

When a TFT is manufactured by the above-described manufacturing method, as shown in FIG. 16, a TFT in which a channel portion, an LDD portion, and a source / drain portion are included in a grain of a large grain silicon crystal.
Can be manufactured.

The mobility of the TFT was 100 cm ² / V · s when formed by the conventional laser annealing method. However, in the TFT of the present embodiment, it was improved to 460 cm ² / V · s. Inspection for checking the durability in a large number of switching operations, that is, applying a voltage of 5 V between the source and the drain, 500 kHz for 1500 hours, turning on the gate voltage,
In the test where OFF is repeated, the conventional TFT has 5 times the initial value.
Although the mobility decreased to about 0%, the TF of the present embodiment
T was 99% or more, and the reliability was improved.

Next, the same steps as in the first embodiment are performed on the TFT array substrate to complete the liquid crystal display device shown in FIG.

As the characteristics of the TFT array have been improved and the deterioration has been reduced, defects in the driving circuit of the liquid crystal display device have been reduced, and defects such as unevenness in screen luminance have been reduced. While the defect rate of the driving circuit when using the conventional TFT was 15%, the liquid crystal display device of the present embodiment reduced the defect rate to 0.5%, and the screen luminance unevenness defect rate was 7%. On the other hand, in the liquid crystal display device of the present embodiment, it was reduced to 0.2%.

FIG. 7 is a cross-sectional view for explaining an electroluminescence (EL) display device of the present invention and a method for manufacturing the same. TFT manufactured using the above manufacturing method
Using an array and in accordance with the method of Embodiment 1, E
An L display device was manufactured.

The switching of the EL display device according to the present invention,
By using FT, the screen luminance unevenness defect rate was 8% in the past, whereas in the EL display device of the present embodiment, it was reduced to 0.2%. In addition, the deterioration in TFT characteristics when switching was performed for a long time or a large number of times resulted in poor image quality. However, the defect rate was reduced from 15% in the past to 4%. In addition, the luminance was 300 c when the voltage of 5 V was applied.
The d / m ² was improved to 580 cd / m ^{2 in} the EL display device of the present embodiment.

In the fourth to sixth embodiments, the film thickness distribution of the amorphous silicon film and the light amount distribution of the laser beam in the crystallization step have been described. However, the film thickness distribution has a band shape, a circumferential shape, and a sharp portion. There are three types of shapes, for example, rhombus, and the light amount distribution of the laser beam also has three types, for example, a band shape, a circumferential shape, and a shape having a pointed portion, for example, a rhombus shape.
Large grain crystals can be formed.

[0112]

The effects of the present invention will be described below.

The effect of an exposure apparatus in which exposure of a photosensitive resist and melting and crystallization of an amorphous semiconductor are performed by the same apparatus will be described. By realizing the same device, the device cost was reduced. In addition, by using the same device, it is easy to achieve high positioning accuracy. The wavelength is 500nm
By using the following laser light, the phase shift technique can be effectively used, and it is easy to locally increase or decrease the amount of light.

The effect of a semiconductor thin film for forming a polycrystalline silicon film by irradiating a laser beam to an amorphous semiconductor thin film having a partially different thickness of an amorphous semiconductor film will be described. By subjecting a portion having a thickness distribution to laser crystallization, a silicon crystal having a large grain size can be formed. By smoothly changing the film thickness at the step portion of the film thickness, a silicon crystal having a larger grain size can be formed. In addition, when a thickness difference between the amorphous semiconductor films is provided, a portion that becomes a vertex is formed, whereby a position where a silicon crystal is formed can be clearly defined.

Next, the effects of the method for manufacturing a semiconductor thin film described above will be described.

A pattern of a photosensitive resist layer is formed, and a portion of the film thickness of the amorphous semiconductor layer is removed by a dry etching method from the pattern. It can be easily formed, and a semiconductor thin film having a large grain silicon crystal can be manufactured. Further, in the step of forming the pattern of the photosensitive resist layer, by using an exposure mask in which the area of the opening is partially changed, the tapered shape of the cut portion of the amorphous semiconductor film is smoothly changed. A semiconductor thin film formed and further having a silicon crystal having a large grain size can be manufactured. Also, in the step of forming a pattern of the photosensitive resist layer, a semiconductor thin film having a silicon crystal having a larger grain size can be similarly manufactured by a method using an exposure mask that changes the phase of irradiation light. By using a light-transmitting film or plate having a partially different thickness as an exposure mask for changing the phase, it is possible to easily change the amount of irradiation light smoothly and to form a silicon crystal having a large grain size. Can be. By using a method in which the resist pattern is formed and then heated to a temperature equal to or higher than the softening temperature of the photosensitive resist, a smoother step portion of the amorphous semiconductor film can be formed, and a silicon crystal having a larger grain size can be formed. Can be. By forming the resist pattern in a circular or similar shape in the above-described manner, an amorphous semiconductor thin film having a film thickness distribution in the form of a spherical convex portion having a vertex can be easily formed. Can,
A large grain silicon crystal whose position is clearly defined can be formed.

A method of irradiating an amorphous semiconductor thin film having no or small film thickness distribution with intense light or laser light of a partially different light amount to form a silicon crystal having a large grain size can be used. It becomes possible. By using an exposure mask in which the area of the opening is partially changed during crystallization, it is possible to easily and accurately irradiate a partially different amount of light.

Further, a method of irradiating an amorphous semiconductor thin film having a film thickness distribution with intense light or laser light of a partially different light amount to form a silicon crystal having a larger grain size is used. Becomes possible. By using an exposure mask in which the area of the opening is partially changed during crystallization, it is possible to easily and accurately irradiate a partially different amount of light. Also, by using an exposure mask that changes the phase of irradiation light at the time of crystallization, similarly, a partially different light amount can be easily and accurately irradiated. By exchanging (approximately) or reversing the exposure mask and the local exposure dose distribution used in the photo process of the amorphous semiconductor film with the exposure mask and the local exposure dose distribution used in the crystallization process, The distribution can be effectively controlled, and a large grain silicon crystal can be formed.

The TFT prepared by using the above semiconductor thin film
The effect of will be described. By forming a TFT using a semiconductor thin film having a large-diameter silicon crystal obtained by laser crystallizing an amorphous semiconductor film in which the thickness of a semiconductor layer is partially different, the reliability of the TFT is improved. When a large grain silicon crystal is formed with a thickness difference in the channel region, the TFT
The characteristics are improved. By making the length of the taper at the step portion of the semiconductor film thickness as close as possible to the length including the channel length and the entire LDD region or offset region,
The characteristics of the TFT are improved, and the reliability is improved. In addition, each T
FT characteristic variation is reduced.

Further, a semiconductor thin film containing a large grain silicon crystal obtained by performing laser crystallization on an amorphous semiconductor film having a peak portion at least at a part of a thick portion is used. The characteristics of the TFT improved,
Variation is reduced.

The effect of the TFT manufacturing method of the present invention will be described. A semiconductor thin film containing a large grain silicon crystal can be formed in the same manner as in the above-described method for manufacturing a semiconductor thin film.

A method of irradiating an amorphous semiconductor film having no or little film thickness distribution with intense light or laser light of a partially different amount of light is a method in which the area of an opening is partially changed during crystallization. By using the mask, it is possible to easily and accurately irradiate a partially different amount of light.

In the step of forming a film thickness distribution on the amorphous semiconductor film by the photo and etching steps, a key pattern for the subsequent photo step is formed at the same time. Place many inside,
The TFT can be formed accurately at the position of the large-grain silicon crystal, the alignment accuracy of the large-grain silicon crystal and the position where the TFT is formed is improved, the characteristics of the TFT are improved, and the variation in characteristics is reduced. , Reliability is improved.

The effect of the liquid crystal display device using the above-described TFT containing a large grain silicon crystal will be described. By forming a liquid crystal display device using a TFT on which a large-diameter silicon crystal is formed using the above-described film thickness distribution or light amount distribution, a design with high definition can be realized. Further, the uniformity of the screen luminance is improved, and the yield is improved. The reliability of the liquid crystal display device is improved.

The effect of the EL display device using the TFT containing the large grain silicon crystal will be described. By forming an EL display device using a TFT in which a large-diameter silicon crystal is formed using the above film thickness distribution or light amount distribution, the luminance of the EL display device is improved. The uniformity of the screen luminance is improved, and the yield is improved. The reliability of the EL display device is improved.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a state of a substrate after forming a resist film described in Embodiments 1, 3, 4, 5, and 6;

FIG. 2 is a perspective view showing the exposure device described in Embodiment 1.

FIG. 3A is a cross-sectional view showing the exposure device according to the first, fourth, and fifth embodiments. FIG. 3B is a graph showing a light amount distribution with respect to an irradiation position of the resist film. Sectional view showing thickness distribution and shape after etching

FIG. 4 is a sectional view showing the laser annealing apparatus according to the first and second embodiments.

FIG. 5 is a cross-sectional view illustrating a structure of a TFT described in Embodiments 1 to 3.

FIG. 6 is a cross-sectional view illustrating a structure of the liquid crystal display device described in Embodiments 1 to 6.

FIG. 7 is a cross-sectional view illustrating a structure of an EL display device described in Embodiments 1 to 6.

FIG. 8 is a perspective view showing the exposure device described in the second and fourth embodiments.

FIG. 9 is a cross-sectional view showing steps of forming a spherical resist pattern and a photo key described in the second, fourth, and fifth embodiments.

FIG. 10 is a cross-sectional view showing a pattern shape in an etching step described in Embodiments 2 and 5;

FIG. 11 is a perspective view showing an exposure device according to a third embodiment.

FIG. 12 is a top view illustrating a film thickness distribution of a silicon layer and a particle size distribution of crystallized silicon described in Embodiment 3;

FIG. 13 is a perspective view showing an exposure mask using a phase shift described in Embodiments 4 and 5.

FIG. 14 is a cross-sectional view illustrating a laser annealing apparatus using the exposure mask described in Embodiments 4 and 6.

FIG. 15A is a cross-sectional view showing a light amount distribution of crystallization using the lens array described in Embodiment 4, and FIG. 15B is a graph showing a light amount distribution.

FIG. 16 is a cross-sectional view illustrating a structure of a TFT described in Embodiments 4 and 6.

FIG. 17 is a plan view showing an exposure mask having a location distribution in the area and the number of openings described in Embodiment 4.

FIG. 18 is a plan view showing an exposure mask having a location distribution in the area and the number of openings described in Embodiments 5 and 6.

FIG. 19 is a plan view showing an exposure mask having a location distribution in the area and the number of openings described in Embodiments 3 and 6;

FIG. 20 is a perspective view showing a laser annealing apparatus according to a sixth embodiment.

21A is a cross-sectional view showing a film thickness distribution and a light amount distribution in a crystallization step using the opening array described in Embodiment 6, and FIG. 21B is a graph showing a light amount distribution.

FIG. 22 is a top view illustrating a film thickness distribution of a silicon layer, a light amount distribution of laser annealing, and a particle size distribution of crystallized silicon described in Embodiment 6;

FIG. 23 is a plan view showing an exposure mask having a location distribution in the area and the number of openings described in Embodiment 6;

[Explanation of symbols]

1 substrate (glass substrate) 2 undercoat layer (mainly SiO ₂₎ 3 amorphous semiconductor film (an amorphous semiconductor film) 4 photosensitive resist film 5 exposed including the exposure portion 6 light 7 phase shift pattern of the photosensitive resist film Mask 8 Amorphous semiconductor film after etching 9 Laser (excimer laser device) 10 Process chamber 11 Chamber window 12 Laser light 13 Mirror 14 Optical shaper 15 Dimmer 16 Source / drain region (high concentration impurity injection region) 17 LDD region (low-concentration impurity implantation region) or offset region 18 Gate insulating film (mainly SiO ₂ ) 19 Gate metal (mainly MoW) 20 Interlayer insulating film (mainly SiO ₂ ) 21 Channel region 22 Source / drain electrode 23 Large Particle size silicon crystal 24 Counter electrode (ITO) 25 Counter substrate 26 Color filter 27 Film 28 Transparent electrode (ITO) 29 Flattening film (polyimide) 30 Liquid crystal 31 Transparent electrode (ITO) 32 Hole injection layer 33 Organic EL material 34 Reflection electrode 35 Aluminum quinolinol complex 36 Light blocking layer and ink dripping prevention wall 37 TFT formation Area 38 Exposure mask 39 Circular light transmitting part 40 Pattern resist part 41 Smooth step pattern resist part 42 Photo key pattern resist layer 43 Photo key pattern semiconductor layer 44 Spherical pattern semiconductor layer 45 Diamond-shaped Light transmission part 46 Silicon thick part 47 Light transmission part of photo key pattern 48 Exposure mask using circular phase shift mask 49 Thin exposure mask part 50 Photo key pattern 51 Exposure mask support 52 Exposure mask 53 Keeper for photo alignment The semiconductor layer 60 a silicon crystal having a gentle difference in level exposure mask 59 pointed shape having over emissions 54 semiconductor layer 55 lens portion 56 Photos for key pattern 57 opening 58 opening of the exposure mask

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 21/268 H01L 21/268 G 5F110 21/027 21/30 502P 29/786 514C 21/336 570 29 / 78 618C 627G 627C F-term (reference) 2H092 JA24 JA29 KA04 KA07 MA08 MA14 MA15 MA16 MA18 MA29 MA30 NA22 NA24 2H095 BA06 BB02 BC09 2H097 BA02 BA06 BB01 CA17 JA02 JA03 LA10 LA12 LA17 5F046 AA17 AA02CA04 DB03 DB07 FA01 FA07 JA01 5F110 AA30 BB02 BB04 CC02 DD01 DD02 DD12 DD13 DD14 EE03 EE06 EE44 FF02 FF23 FF25 FF29 FF30 FF31 FF32 GG02 GG13 GG22 GG25 GG43 GG45 GG47 HJ12 HJ23 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 HL03 QQ02 QQ11

Claims (30)

[Claims] 1. An exposure apparatus, wherein exposure to a photosensitive resist and melt crystallization to an amorphous semiconductor can be performed by the same apparatus. 2. The exposure apparatus according to claim 1, wherein a laser beam having a wavelength of 500 nm or less is used as a light source. 3. A semiconductor thin film formed by at least a step of forming an amorphous semiconductor film on a substrate and a step of irradiating the substrate with intense light or laser light, wherein the film is a film of an amorphous semiconductor film. A semiconductor thin film characterized in that the thickness is partially different. 4. The semiconductor thin film according to claim 3, wherein at least a part of the thick portion of the amorphous semiconductor film has an apex or at least a portion of the thin portion has a thin film thickness. A semiconductor thin film characterized in that a thinnest point partially exists. 5. The semiconductor thin film according to claim 3, wherein a portion of the amorphous semiconductor film having a large thickness has a shape at least partially sharp. Semiconductor thin film. 6. The semiconductor thin film according to claim 3, wherein a step portion of the amorphous semiconductor film has a tapered shape, and a length of the step portion is 0.5 μm or more. A semiconductor thin film characterized in that: 7. A method for manufacturing a semiconductor thin film according to claim 3, wherein a photosensitive resist layer having a partially different thickness is provided on the surface of the amorphous semiconductor film. Forming a plurality of concave and convex portions on the surface of the amorphous semiconductor film by performing dry etching on the surface of the amorphous semiconductor film. 8. Coating a photosensitive resist layer, and exposing, developing,
Peeling, strip, after forming a square or similar resist pattern, by heating above the softening temperature of the photosensitive resist, utilizing the surface tension of the photosensitive resist,
8. The method according to claim 7, wherein a resist pattern having a gentle step is formed. 9. A method of coating a photosensitive resist layer, and exposing, developing,
After peeling and forming a circular or similar resist pattern, the resist pattern is heated to a temperature equal to or higher than the softening temperature of the photosensitive resist to form a resist pattern having a spherical convex portion by using the surface tension of the photosensitive resist. The method of manufacturing a semiconductor thin film according to claim 7, wherein: 10. A photosensitive resist layer is coated, exposed, developed, and peeled to form a resist pattern having at least a partly pointed shape, for example, a rhombus shape or a shape similar thereto, and then a temperature higher than the softening temperature of the photosensitive resist. 8. The method of manufacturing a semiconductor thin film according to claim 7, wherein a resist pattern having a spherical convex portion is formed by utilizing the surface tension of the photosensitive resist by heating the resist. 11. An exposure mask for changing the phase of irradiation light,
For example, by exposing and developing a photosensitive resist using a light-transmitting film and plate having partially different thicknesses,
8. The method of manufacturing a semiconductor thin film according to claim 7, wherein a resist film having a thickness difference is formed, and a semiconductor thin film having a thickness difference is formed thereon by etching. 12. A step of exposing a photosensitive resist,
By exposing and developing the photosensitive resist using an exposure device that designed the optical path so that the irradiation light is out of focus,
8. The method of manufacturing a semiconductor thin film according to claim 7, wherein a resist film having a thickness difference is formed, and a semiconductor thin film having a thickness difference is formed thereon by etching. 13. The step of exposing a photosensitive resist,
Using an exposure mask with the area of the opening partly changed,
Forming a resist film having a difference in thickness by exposing and developing a photosensitive resist, and then etching the resist film to form a semiconductor thin film having a difference in thickness. 8. The method for producing a semiconductor thin film according to 7. 14. A non-crystalline semiconductor film having a partially different film thickness is crystallized by irradiating a part with a changed film thickness with intense light or laser light having a partially different light amount. A method for manufacturing a semiconductor thin film. 15. The semiconductor thin film according to claim 14, wherein an intense light or a laser light having a partially different light amount is irradiated using an exposure mask in which the area of the opening is partially changed. Production method. 16. The method of manufacturing a semiconductor thin film according to claim 14, wherein intense light or laser light having a partially different light amount is irradiated using an exposure mask that changes the phase of the irradiation light. 17. The method according to claim 14, wherein an exposure mask used in the step of irradiating the photosensitive resist and an exposure mask used in the step of crystallizing the semiconductor film have the same or similar light amount distribution. Of manufacturing a semiconductor thin film. 18. The method according to claim 14, wherein the exposure mask used in the step of irradiating the photosensitive resist and the exposure mask used in the step of crystallizing the semiconductor film have the opposite light intensity distribution. Of manufacturing a semiconductor thin film. 19. An amorphous semiconductor film having a diamond-shaped or circular-shaped or similar-shaped portion having a large film thickness is irradiated with intense light or laser light having a light intensity distribution in a band-like shape, whereby A method for manufacturing a semiconductor thin film, comprising forming a semiconductor film. 20. A thin film transistor characterized in that the thickness in the semiconductor layer is partially different. 21. A thin film transistor characterized in that a semiconductor film in a region where a channel is formed in a semiconductor layer is partially different. 22. The thin film transistor according to claim 20, wherein the step portion of the semiconductor film is tapered, and the length of the step portion is 0.5 μm or more. Thin film transistor. 23. The thin film transistor according to claim 20, wherein at least a part of the thick part of the semiconductor film has an apex or at least one of the thin parts of the semiconductor film. A thin film transistor characterized in that a thinnest point exists in a portion. 24. The thin film transistor according to claim 20, wherein a portion of the semiconductor film having a large thickness has at least a portion with a pointed shape, for example, a diamond shape. 25. A method of manufacturing a thin film transistor, comprising using the method of manufacturing a semiconductor thin film according to claim 7. 26. A photosensitive resist layer portion having a partially different thickness is provided on the surface of the amorphous semiconductor film, and a plurality of irregularities are formed on the surface of the amorphous semiconductor film by performing dry etching on the photosensitive resist layer. 26. The method according to claim 25, further comprising forming a portion and simultaneously forming a key pattern for a photo process on the semiconductor thin film. 27. A liquid crystal display device using the thin film transistor according to claim 20, wherein the film thickness in the semiconductor layer is partially different. 28. A method of manufacturing a liquid crystal display device, comprising using the method of manufacturing a thin film transistor according to claim 25. 29. An EL display device using the thin film transistor according to claim 20, wherein the film thickness in the semiconductor layer is partially different. 30. A method for manufacturing an EL display device, comprising using the method for manufacturing a thin film transistor according to claim 25.