JP2002135108A - レベルシフタ回路及び半導体装置 - Google Patents
レベルシフタ回路及び半導体装置Info
- Publication number
- JP2002135108A JP2002135108A JP2001223683A JP2001223683A JP2002135108A JP 2002135108 A JP2002135108 A JP 2002135108A JP 2001223683 A JP2001223683 A JP 2001223683A JP 2001223683 A JP2001223683 A JP 2001223683A JP 2002135108 A JP2002135108 A JP 2002135108A
- Authority
- JP
- Japan
- Prior art keywords
- channel transistor
- voltage
- power supply
- level shifter
- shifter circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000000872 buffer Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 35
- 239000010410 layer Substances 0.000 description 31
- 238000005530 etching Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 19
- 239000008186 active pharmaceutical agent Substances 0.000 description 16
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001223683A JP2002135108A (ja) | 2000-07-27 | 2001-07-24 | レベルシフタ回路及び半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-226548 | 2000-07-27 | ||
| JP2000226548 | 2000-07-27 | ||
| JP2001223683A JP2002135108A (ja) | 2000-07-27 | 2001-07-24 | レベルシフタ回路及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002135108A true JP2002135108A (ja) | 2002-05-10 |
| JP2002135108A5 JP2002135108A5 (OSRAM) | 2008-07-03 |
Family
ID=26596778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001223683A Withdrawn JP2002135108A (ja) | 2000-07-27 | 2001-07-24 | レベルシフタ回路及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002135108A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016058449A (ja) * | 2014-09-05 | 2016-04-21 | 住友電気工業株式会社 | 半導体装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04242319A (ja) * | 1991-01-16 | 1992-08-31 | Fujitsu Ltd | Ｃｍｏｓ集積回路 |
| JPH06204850A (ja) * | 1993-01-07 | 1994-07-22 | Oki Electric Ind Co Ltd | レベルシフタ回路 |
| JPH07153908A (ja) * | 1993-11-29 | 1995-06-16 | Fujitsu Ltd | 半導体集積回路 |
| JPH10135817A (ja) * | 1996-10-28 | 1998-05-22 | Fujitsu Ltd | レベルシフト回路 |
| JPH11145821A (ja) * | 1997-11-12 | 1999-05-28 | Seiko Epson Corp | 論理振幅レベル変換回路，液晶装置及び電子機器 |
| JPH11330945A (ja) * | 1998-03-20 | 1999-11-30 | Sharp Corp | 電圧レベル変換器 |
| JP2000151385A (ja) * | 1998-11-16 | 2000-05-30 | Toshiba Corp | 半導体集積回路装置 |
-
2001
- 2001-07-24 JP JP2001223683A patent/JP2002135108A/ja not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04242319A (ja) * | 1991-01-16 | 1992-08-31 | Fujitsu Ltd | Ｃｍｏｓ集積回路 |
| JPH06204850A (ja) * | 1993-01-07 | 1994-07-22 | Oki Electric Ind Co Ltd | レベルシフタ回路 |
| JPH07153908A (ja) * | 1993-11-29 | 1995-06-16 | Fujitsu Ltd | 半導体集積回路 |
| JPH10135817A (ja) * | 1996-10-28 | 1998-05-22 | Fujitsu Ltd | レベルシフト回路 |
| JPH11145821A (ja) * | 1997-11-12 | 1999-05-28 | Seiko Epson Corp | 論理振幅レベル変換回路，液晶装置及び電子機器 |
| JPH11330945A (ja) * | 1998-03-20 | 1999-11-30 | Sharp Corp | 電圧レベル変換器 |
| JP2000151385A (ja) * | 1998-11-16 | 2000-05-30 | Toshiba Corp | 半導体集積回路装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016058449A (ja) * | 2014-09-05 | 2016-04-21 | 住友電気工業株式会社 | 半導体装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080520 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080520 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101029 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101116 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20110111 |