JP2002134700A - 集積回路のための出力段ｅｓｄ保護 - Google Patents

集積回路のための出力段ｅｓｄ保護

Info

Publication number
JP2002134700A
JP2002134700A JP2001225264A JP2001225264A JP2002134700A JP 2002134700 A JP2002134700 A JP 2002134700A JP 2001225264 A JP2001225264 A JP 2001225264A JP 2001225264 A JP2001225264 A JP 2001225264A JP 2002134700 A JP2002134700 A JP 2002134700A
Authority
JP
Japan
Prior art keywords
diode
transistor
integrated circuit
bonding pad
reference potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001225264A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002134700A5 (enExample
Inventor
C Davis Paul
シー．ディヴィス ポール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of JP2002134700A publication Critical patent/JP2002134700A/ja
Publication of JP2002134700A5 publication Critical patent/JP2002134700A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2001225264A 2000-07-26 2001-07-26 集積回路のための出力段ｅｓｄ保護 Pending JP2002134700A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/626,221 US6529059B1 (en) 2000-07-26 2000-07-26 Output stage ESD protection for an integrated circuit
US09/626221 2000-07-26

Publications (2)

Publication Number Publication Date
JP2002134700A true JP2002134700A (ja) 2002-05-10
JP2002134700A5 JP2002134700A5 (enExample) 2008-08-28

Family

ID=24509464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001225264A Pending JP2002134700A (ja) 2000-07-26 2001-07-26 集積回路のための出力段ｅｓｄ保護

Country Status (2)

Country Link
US (1) US6529059B1 (enExample)
JP (1) JP2002134700A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6529059B1 (en) * 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit
WO2003063203A2 (en) * 2002-01-18 2003-07-31 The Regents Of The University Of California On-chip esd protection circuit
US7280330B2 (en) * 2004-09-08 2007-10-09 Texas Instruments Incorporated ESD protection for RF power amplifier circuits
US7859803B2 (en) * 2005-09-19 2010-12-28 The Regents Of The University Of California Voltage overload protection circuits
US7813092B2 (en) * 2005-09-19 2010-10-12 The Regents Of The University Of California ESD unit protection cell for distributed amplifiers
US7974050B2 (en) * 2007-10-16 2011-07-05 Industrial Technology Research Institute Loading reduction device and method
US8854777B2 (en) 2010-11-05 2014-10-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Systems and methods for ESD protection for RF couplers in semiconductor packages
US9106072B2 (en) * 2012-12-19 2015-08-11 Qualcomm Incorporated Electrostatic discharge protection of amplifier cascode devices
US9153569B1 (en) * 2014-03-21 2015-10-06 Texas Instruments Incorporated Segmented NPN vertical bipolar transistor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63277423A (ja) * 1987-05-06 1988-11-15 Mitsubishi Electric Corp 集積回路
JPH01137806A (ja) * 1987-11-25 1989-05-30 Fujitsu Ltd 保護回路を有する半導体装置
JPH0690520A (ja) * 1992-09-09 1994-03-29 Toshiba Corp 誤動作防止回路および保護回路
JP2002124573A (ja) * 2000-07-26 2002-04-26 Agere Systems Guardian Corp 集積回路のための入力段ｅｓｄ保護
US6529059B1 (en) * 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763184A (en) 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
US4990802A (en) 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
NL8901725A (nl) * 1989-07-06 1991-02-01 Philips Nv Versterkerschakeling.
US5304839A (en) 1990-12-04 1994-04-19 At&T Bell Laboratories Bipolar ESD protection for integrated circuits
JP3333239B2 (ja) * 1991-12-05 2002-10-15 株式会社東芝 可変利得回路
US5264723A (en) 1992-04-09 1993-11-23 At&T Bell Laboratories Integrated circuit with MOS capacitor for improved ESD protection
US5345357A (en) 1992-06-05 1994-09-06 At&T Bell Laboratories ESD protection of output buffers
US5446302A (en) 1993-12-14 1995-08-29 Analog Devices, Incorporated Integrated circuit with diode-connected transistor for reducing ESD damage
US5463520A (en) 1994-05-09 1995-10-31 At&T Ipm Corp. Electrostatic discharge protection with hysteresis trigger circuit
US6552594B2 (en) * 1997-03-27 2003-04-22 Winbond Electronics, Corp. Output buffer with improved ESD protection
US6154063A (en) * 1999-04-26 2000-11-28 Maxim Integrated Products, Inc. Class AB emitter follower buffers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63277423A (ja) * 1987-05-06 1988-11-15 Mitsubishi Electric Corp 集積回路
JPH01137806A (ja) * 1987-11-25 1989-05-30 Fujitsu Ltd 保護回路を有する半導体装置
JPH0690520A (ja) * 1992-09-09 1994-03-29 Toshiba Corp 誤動作防止回路および保護回路
JP2002124573A (ja) * 2000-07-26 2002-04-26 Agere Systems Guardian Corp 集積回路のための入力段ｅｓｄ保護
US6529059B1 (en) * 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit

Also Published As

Publication number Publication date
US6529059B1 (en) 2003-03-04

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