JP2002124576A - テーパランディングを有する構造及び製造方法 - Google Patents

テーパランディングを有する構造及び製造方法

Info

Publication number
JP2002124576A
JP2002124576A JP2001262668A JP2001262668A JP2002124576A JP 2002124576 A JP2002124576 A JP 2002124576A JP 2001262668 A JP2001262668 A JP 2001262668A JP 2001262668 A JP2001262668 A JP 2001262668A JP 2002124576 A JP2002124576 A JP 2002124576A
Authority
JP
Japan
Prior art keywords
layer
conductive
landing
tapered
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2001262668A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002124576A5 (enrdf_load_stackoverflow
Inventor
Stephen Ward Downey
ワード ダウニイ スティーヴン
Belden Harris Edward
ベルデン ハリス エドワード
Sailesh Mansinh Merchant
マンシン マーチャント セイレス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of JP2002124576A publication Critical patent/JP2002124576A/ja
Publication of JP2002124576A5 publication Critical patent/JP2002124576A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2001262668A 2000-08-31 2001-08-31 テーパランディングを有する構造及び製造方法 Abandoned JP2002124576A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65349200A 2000-08-31 2000-08-31
US09/653492 2000-08-31

Publications (2)

Publication Number Publication Date
JP2002124576A true JP2002124576A (ja) 2002-04-26
JP2002124576A5 JP2002124576A5 (enrdf_load_stackoverflow) 2004-09-09

Family

ID=24621097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001262668A Abandoned JP2002124576A (ja) 2000-08-31 2001-08-31 テーパランディングを有する構造及び製造方法

Country Status (4)

Country Link
JP (1) JP2002124576A (enrdf_load_stackoverflow)
KR (1) KR20020018606A (enrdf_load_stackoverflow)
GB (1) GB2371408B (enrdf_load_stackoverflow)
TW (1) TW582090B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049089A (ja) * 2005-08-12 2007-02-22 Nec Electronics Corp 半導体装置およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11869725B2 (en) 2021-11-30 2024-01-09 Texas Instruments Incorporated Multi-stacked capacitor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838605A (en) * 1996-03-20 1998-11-17 Ramtron International Corporation Iridium oxide local interconnect
US6114766A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Integrated circuit with metal features presenting a larger landing area for vias

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049089A (ja) * 2005-08-12 2007-02-22 Nec Electronics Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
TW582090B (en) 2004-04-01
GB2371408B (en) 2004-12-22
GB0121205D0 (en) 2001-10-24
GB2371408A (en) 2002-07-24
KR20020018606A (ko) 2002-03-08

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