TW582090B - Structure with tapered landing and method of fabrication - Google Patents
Structure with tapered landing and method of fabrication Download PDFInfo
- Publication number
- TW582090B TW582090B TW090121454A TW90121454A TW582090B TW 582090 B TW582090 B TW 582090B TW 090121454 A TW090121454 A TW 090121454A TW 90121454 A TW90121454 A TW 90121454A TW 582090 B TW582090 B TW 582090B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- region
- conductive
- patent application
- thick portion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65349200A | 2000-08-31 | 2000-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW582090B true TW582090B (en) | 2004-04-01 |
Family
ID=24621097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090121454A TW582090B (en) | 2000-08-31 | 2001-08-30 | Structure with tapered landing and method of fabrication |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2002124576A (enrdf_load_stackoverflow) |
KR (1) | KR20020018606A (enrdf_load_stackoverflow) |
GB (1) | GB2371408B (enrdf_load_stackoverflow) |
TW (1) | TW582090B (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4949656B2 (ja) * | 2005-08-12 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US11869725B2 (en) | 2021-11-30 | 2024-01-09 | Texas Instruments Incorporated | Multi-stacked capacitor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5838605A (en) * | 1996-03-20 | 1998-11-17 | Ramtron International Corporation | Iridium oxide local interconnect |
US6114766A (en) * | 1997-12-18 | 2000-09-05 | Advanced Micro Devices, Inc. | Integrated circuit with metal features presenting a larger landing area for vias |
-
2001
- 2001-08-30 TW TW090121454A patent/TW582090B/zh not_active IP Right Cessation
- 2001-08-31 JP JP2001262668A patent/JP2002124576A/ja not_active Abandoned
- 2001-08-31 KR KR1020010053303A patent/KR20020018606A/ko not_active Withdrawn
- 2001-08-31 GB GB0121205A patent/GB2371408B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2371408B (en) | 2004-12-22 |
KR20020018606A (ko) | 2002-03-08 |
GB2371408A (en) | 2002-07-24 |
JP2002124576A (ja) | 2002-04-26 |
GB0121205D0 (en) | 2001-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |