JP2002118079A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simply repair a broken dicing sheet having a scribed wafer mounted thereon. SOLUTION: A diving sheet 2 having a broken part 4 is cut to ensure a specified region including a wafer 1 without peeling off the wafer 1, a new dicing sheet 22 having a cut region (with the center at a portion corresponding to the wafer 1) smaller in area than the prescribed area region of the but is larger than the area of the wafer 1 overlays the cut dicing sheet 21, and overlaid portions of the old dicing sheet and the new dicing sheet are heated to bond both.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for repairing a dicing sheet on which a scribed wafer is mounted.

[0002]

2. Description of the Related Art Conventionally, in a process of manufacturing a semiconductor chip, a process of mounting (fixing) a wafer serving as a substrate on a dicing sheet, a process of individually full-cutting the wafer, and a process of extending the wafer are described. , A step of picking up chips is necessary, but in this full cut process,
The dicing sheet may be torn depending on the state of the full cut and the state of stretching, and in such a case, the torn portion was repaired with tape, or the entire wafer was transferred to another dicing sheet. .

[0003]

However, when the dicing sheet is torn, the above-mentioned conventional repairing method may hinder the next step, that is, the step of extending the wafer.

[0004] That is, since the tearing of the dicing sheet is enlarged during the stretching, the chip which should be a non-defective product is required.
Up to 30% had been discarded as yield. In addition, the method of mounting on a different dicing sheet takes too much time to fix the wafer, etc., and when the wafer is peeled off from the torn dicing sheet by hand, the wafer is damaged including the chip portion. There were also problems.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems in the conventional method of manufacturing a semiconductor device, and is intended to easily repair a broken dicing sheet on which a scribed wafer is mounted. An object of the present invention is to provide a method for manufacturing a device.

[0006]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a method of manufacturing a semiconductor device for repairing a flaw generated on a dicing sheet on which a scribed wafer is mounted. A step of cutting a first area around the wafer of the dicing sheet around the center of the wafer so as not to include the scratch, and a second step of cutting around a center of a new scratch-free dicing sheet. Area is smaller than the area of the first area, larger than the area of the wafer, and
A step of cutting as a figure congruent with the area of the first area, a step of superposing a new dicing sheet of the second area on the dicing sheet of the first area, and dicing the first area. A method of manufacturing a semiconductor device, comprising: heating a portion where a sheet is overlapped with a new dicing sheet obtained by cutting out the second region, and joining the overlapped portion.

That is, according to the present invention, the dicing sheet is cut off without removing the wafer from the torn dicing sheet so as to secure a central area around the wafer which is free from scratches.
A new dicing sheet obtained by cutting a central area smaller than the area of the area and larger than the area of the wafer is superimposed, and then the superposed portion of the old dicing sheet and the new dicing sheet are heated to join the two. This makes it possible to easily repair a broken dicing sheet on which a scribed wafer is mounted.

[0008]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a first step (one-fifth of the entire process) of a method for repairing a dicing sheet in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 1A shows the state of a product in process at the time of entering this process. A dicing sheet 2 on which a wafer 1 is mounted is attached to a disco ring 3. The dicing sheet 2 has a sheet tear 21.

In the step shown in FIG. 1 (b), the periphery of the wafer 1 of the dicing sheet 2 is cut out and shown as a dicing sheet 22 cut out. The surface area of the cut dicing sheet 22 is, of course,
It has been cut out to be larger than the surface area. In practice, this surface area is cut out by the person in charge. The figure of the region to be cut is an arbitrary figure including a circle (here, substantially a square), but is cut so that the center substantially matches the center of the wafer 1.

In this embodiment, the cut dicing sheet 22 is cut so as to avoid the sheet tear 21, but the sheet tear 21 may be in contact with the periphery of the dicing sheet 22.

FIG. 2 is a plan view showing a second step (1/5 of the entire process) of the dicing sheet repairing method in the method of manufacturing a semiconductor device according to the embodiment of the present invention. Independently of the process of FIG. 1, in the process shown in FIG. 2, a new dicing sheet for repair is prepared.

First, in the step shown in FIG. 2A, a new dicing sheet 23 having no scratch is prepared. Next, FIG.
In the step shown in (b), the cutout portion 221 of the new dicing sheet 23 is cut out. This cut part 22
1 is cut so that the center substantially matches the center of the new dicing sheet 23. The shape of the region to be cut out is an arbitrary shape including a circle (here, substantially a square).
The dicing sheet 22 is cut out so as to be substantially congruent with the figure of the dicing sheet 22 shown in FIG.

FIG. 3 is a plan view showing a third step (one-fifth of the whole) of the dicing sheet repairing method in the method of manufacturing a semiconductor device according to the embodiment of the present invention. Here, a new dicing sheet 31 after being cut from the upper part of the cut dicing sheet 22 (the cut portion 221 is cut from the new dicing sheet shown in FIG. 2, and the cut mark 32 is a cavity).
And superimpose both.

FIG. 4 is a plan view showing a fourth step (one-fifth of the entire process) of the dicing sheet repairing method in the method of manufacturing a semiconductor device according to the embodiment of the present invention. FIG. 4A shows the cut dicing sheet 22.
3 shows a state in which the new dicing sheet 31 after cutting is superimposed, that is, a state of the in-process product immediately after the step shown in FIG. 3 is completed. The overlapping portion 4 indicates a region of an overlapping portion between the cut dicing sheet 22 and the cut new dicing sheet 31.

In the step shown in FIG.
Is heated by the heating wire 5 and the cut dicing sheet 22
And the new dicing sheet 31 after cutting.

As the heating wire 5, a vacuum packing machine or the like can be used. FIG. 5 is a plan view showing a fifth step (one-fifth of the whole) of the dicing sheet repairing method in the method for manufacturing a semiconductor device according to the embodiment of the present invention.

Here, the in-process product immediately after the completion of the process of FIG. This completes all repair steps. In addition, the above process according to the present invention can be a process before the stretching process of the dicing sheet.

[0019]

As described above, according to the present invention, the dicing sheet is cut out without removing the wafer from the torn dicing sheet so as to secure a central area around the wafer which is free from scratches on the dicing sheet. A new dicing sheet having a central area smaller than the area of the above area and larger than the area of the wafer cut out is superimposed on the dicing sheet, and thereafter, a superposed portion of the old dicing sheet and the new dicing sheet is heated. Then, the two are joined, so that the dicing sheet on which the scribed wafer is mounted can be easily repaired torn.

[Brief description of the drawings]

FIG. 1 is a plan view showing a first step (1/5 of the entire process) of a dicing sheet repairing method in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view showing a second step (2/5 of the entire process) of the dicing sheet repairing method in the semiconductor device manufacturing method according to the embodiment of the present invention.

FIG. 3 is a plan view showing a third step (3/5 of the entire process) of the dicing sheet repairing method in the method for manufacturing a semiconductor device according to the embodiment of the present invention;

FIG. 4 is a plan view showing a fourth step (4/5 of the entire process) of the dicing sheet repairing method in the method for manufacturing a semiconductor device according to the embodiment of the present invention;

FIG. 5 is a plan view showing a fifth step (5/5 of the entire process) of the dicing sheet repairing method in the method for manufacturing a semiconductor device according to the embodiment of the present invention;

[Explanation of symbols]

1 ... wafer, 2 ... dicing sheet, 3 ... disco ring, 4 ... overlapping part, 5 ... heating wire, 21 ...
Sheet torn, 22 ... Dicing sheet cut out, 2
3. New dicing sheet

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference)

Claims (7)

[Claims] 1. A method of manufacturing a semiconductor device for repairing a scratch generated on a dicing sheet on which a scribed wafer is mounted, the method comprising:
Cutting the area around the center of the wafer so as not to include the scratches, and the second area centering about the center of a new scratch-free dicing sheet as the first area A step of cutting as a figure smaller than the area of the wafer and larger than the area of the wafer and congruent with the first area; and cutting the second area on a dicing sheet obtained by cutting the first area. Superimposing a new dicing sheet, and heating a superimposed portion of the dicing sheet obtained by cutting out the first region and the new dicing sheet obtained by cutting out the second region to join the superposed portion. A method for manufacturing a semiconductor device, comprising: 2. The method according to claim 1, wherein a peripheral portion of the first region is in contact with the flaw. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the figure in the first area is a substantially square. 4. The method according to claim 1, wherein the figure in the first area is a substantially circle or a substantially ellipse. 5. The method according to claim 1, wherein the first region and the second region are cut by an operator's eye. 6. The method according to claim 1, wherein a heating wire is used for the heating. 7. The dicing sheet according to claim 1, wherein the scratch on the dicing sheet is a break in the dicing sheet.
The manufacturing method of the semiconductor device described in the above.