JP2002118074A5 - - Google Patents
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- Publication number
- JP2002118074A5 JP2002118074A5 JP2000308506A JP2000308506A JP2002118074A5 JP 2002118074 A5 JP2002118074 A5 JP 2002118074A5 JP 2000308506 A JP2000308506 A JP 2000308506A JP 2000308506 A JP2000308506 A JP 2000308506A JP 2002118074 A5 JP2002118074 A5 JP 2002118074A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000308506A JP2002118074A (ja) | 2000-10-06 | 2000-10-06 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000308506A JP2002118074A (ja) | 2000-10-06 | 2000-10-06 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002118074A JP2002118074A (ja) | 2002-04-19 |
| JP2002118074A5 true JP2002118074A5 (ru) | 2007-11-22 |
Family
ID=18788804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000308506A Withdrawn JP2002118074A (ja) | 2000-10-06 | 2000-10-06 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002118074A (ru) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7973313B2 (en) * | 2003-02-24 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0349217A (ja) * | 1989-07-18 | 1991-03-04 | Fuji Electric Co Ltd | 半導体基体用プラズマドーピング装置 |
| JPH04147617A (ja) * | 1990-10-09 | 1992-05-21 | Hitachi Ltd | 半導体集積回路装置とその製造方法 |
| JPH07221043A (ja) * | 1994-02-08 | 1995-08-18 | G T C:Kk | イオン注入法 |
| JPH08204208A (ja) * | 1995-01-30 | 1996-08-09 | Semiconductor Energy Lab Co Ltd | 結晶性シリコン半導体装置の製造方法 |
| JP3512550B2 (ja) * | 1995-01-30 | 2004-03-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3514912B2 (ja) * | 1995-08-31 | 2004-04-05 | 東芝電子エンジニアリング株式会社 | 薄膜トランジスタの製造方法 |
| JPH1012890A (ja) * | 1996-06-20 | 1998-01-16 | Sony Corp | 薄膜半導体装置の製造方法 |
| JP3638424B2 (ja) * | 1997-01-20 | 2005-04-13 | 株式会社東芝 | 半導体装置の製造方法及び半導体製造装置 |
| JP2000058472A (ja) * | 1998-06-03 | 2000-02-25 | Toshiba Corp | 半導体装置の製造方法 |
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2000
- 2000-10-06 JP JP2000308506A patent/JP2002118074A/ja not_active Withdrawn