JP2002100693A - Package for housing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent cracks from causing in an input and output terminal mounted to a semiconductor package. SOLUTION: The package for housing a semiconductor element comprises an input and output terminal 4 having a flat part 4a and a standing wall 4b formed of dielectric material. A notch 4c, which has a surface P flush with the side of the standing wall 4b inside a flame body 2, is formed on a portion of a side H of the flat part 4a inside the frame body 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing various semiconductor devices used in the fields of optical communication, microwave communication, millimeter wave communication, etc., and more particularly, to a semiconductor device housing package provided in this semiconductor device housing package. It relates to improvement of input / output terminals.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package (hereinafter referred to as a semiconductor package) for housing various semiconductor elements operated by a high frequency signal in a microwave band or a millimeter wave band or an optical signal includes a semiconductor element and an external electric device. An input / output terminal for inputting / outputting a high-frequency signal to / from the circuit is provided. 4 and 5 are perspective views of an optical semiconductor package used in the optical communication field among the semiconductor packages.

As shown in these figures, an input / output terminal 10
4 is formed by stacking a substantially rectangular parallelepiped standing wall portion 104b on the upper surface of a substantially rectangular flat plate portion 104a, and has a function of inputting and outputting a high-frequency signal between the semiconductor element 109 and an external electric circuit (not shown). It has a function of blocking the inside and outside of the optical semiconductor package.

The flat plate portion 104a is made of alumina (Al ₂
O ₃ ) ceramics, aluminum nitride (AlN) ceramics, mullite (3Al ₂ O ₃ .2SiO ₂ ) ceramics, etc., and a tungsten (W) , Molybdenum (Mo) -manganese (Mn) and the like, and a lower conductor 104a-A made of a metallized layer similar to the line conductor 104a-A on the entire lower surface. On the side surface parallel to the line conductor 104a-A, a side ground conductor 104a-B made of the same metallization layer as the line conductor 104a-A is formed.

These line conductors 1 made of a metallized layer
04a-A, side ground conductors 104a-B, and lower ground conductors 104a-C are made of tungsten (W), molybdenum (M
o), manganese (Mn) or the like. For example, a metal paste obtained by adding and mixing an organic solvent and a solvent to a powder of tungsten or the like is preliminarily printed and applied in a predetermined pattern on a ceramic green sheet for the flat plate portion 104a by a conventionally known screen printing method, followed by baking. It is formed by this.

On the other hand, the vertical wall portion 104b is
And a line conductor 1 on the entire upper surface thereof.
An upper ground conductor 104b-A made of the same metallization layer as that of the flat conductor 104a-A is provided on the entire surface of the flat plate portion 104a in contact with the side ground conductor 104a-B.
Side grounding conductor 1 made of the same metallized layer as 4a-A
04b-B is formed.

The upper grounding conductor 104b-A and the side grounding conductor 104b-B, which are made of a metallized layer, are a line conductor 104a-A, a side grounding conductor 104a-B, and a lower grounding conductor 104a- formed on the flat plate portion 104a. It is formed by printing and applying a predetermined pattern in the same manner as in C and baking it.

As described above, the input / output terminal 104 is connected to the upper ground conductor 104b-A and the side ground conductor 104b-A.
B, side ground conductors 104a-B, lower ground conductor 104a
-C, the line conductor 104a-A has a pseudo-coaxial structure,
By making the input and output of high-frequency signals good, it is joined to a mounting portion 102a formed of a cutout or a through hole provided in the frame body 102 via a brazing material such as silver brazing, so that the inside and outside of the optical semiconductor package can be improved. It has the function of shutting off.

This optical semiconductor package comprises a substrate 101
And a frame 102 joined to the upper surface thereof, and the frame 10
2, an input / output terminal 104 fitted to the side of the frame 2, and a cylindrical fixing member 1 for fixing an optical fiber joined to the side of the frame 102.
03 and the seal ring 10 joined to the upper surface of the frame 102.
6 is provided.

The base 101 has a mounting portion 101a on which the semiconductor element 109 is mounted, and has a function of efficiently dissipating heat generated during operation of the semiconductor element 109 to the outside. Copper (Cu) -tungsten (W) It is made of a metal material such as an alloy or an iron (Fe) -nickel (Ni) -cobalt (Co) alloy.

The frame 102 has a mounting portion 1
01a is joined with a brazing material such as silver brazing to surround the
A mounting portion 102a for fitting the input / output terminal 104 to a side portion,
A through hole 102b functioning as an optical transmission path is formed on the other side, and a copper (Cu) -tungsten (W) alloy, an iron (Fe) -nickel (Ni) -cobalt (Co) alloy, etc. Made of metallic material.

The input / output terminal 104 is fitted to the mounting portion 102a with a brazing material such as silver brazing.

The fixing member 103 has one surface formed through the through hole 10.
2b is joined with a brazing material such as silver brazing so as to surround the opening,
On the other side, a metal holder 107 to which an optical fiber 108 is attached with an adhesive such as a resin is joined with a low melting point brazing material such as gold (Au) -tin (Sn).

The lead terminal 105 is connected to the line conductor 104a-A of the input / output terminal 104 via a brazing material such as silver brazing, and inputs and outputs a high-frequency signal between the external electric circuit and the input / output terminal 104. Yes, iron (Fe) -nickel (N
i)-A metal material such as a cobalt (Co) alloy.

A seal ring 106 is bonded to the upper surface of the frame 102 with a brazing material such as silver brazing to sandwich the input / output terminals 104 and to bond a lid (not shown) to the upper surface by seam welding or the like. Function as

In such an optical semiconductor package, a semiconductor element 109 as an optical semiconductor element is mounted on the mounting portion 101a.
The line conductor 104a-A and the semiconductor element 109 are electrically connected by a bonding wire (not shown) while being mounted and fixed with a low melting point brazing material such as n-Pb solder. A metal holder 107 having an adhesive 108 attached thereto with a resin or the like is attached to a gold (Au) -tin (S
n) and the like, and after joining with a low melting point brazing material, the seal ring 10
6. An optical semiconductor device as a product is obtained by joining a lid (not shown) to the upper surface by seam welding or the like.

In such an optical semiconductor device, for example, the optical semiconductor element 1 is driven by a drive signal supplied from an external electric circuit.
09 is optically excited, and the excited laser light and the like are transmitted to and received from the optical fiber 108, and transmitted through the optical fiber 108, thereby functioning as a photoelectric conversion device capable of transmitting a large amount of information at high speed, and Often used in fields.

[0018]

However, in the above-mentioned conventional input / output terminal 104, the input / output terminal 104 is attached to the mounting portion 102a.
When fitted with a brazing material such as silver brazing,
Frame body 10 composed of side ground conductors 104a-B and metal material
In some cases, it flows so as to fill a small gap with the inner wall surface, and a brazing material pool is generated in the gap. In this case, due to the difference in thermal expansion between the brazing material and the portion of the flat portion 104a located in the semiconductor package, and between the brazing material and the inner wall surface of the frame 102, the flat portion 104a having the lowest elasticity is formed. However, there is a problem that heat distortion occurs and cracks occur.

As a method for solving this problem,
It is conceivable to make the gap between the side ground conductors 104a-B and the inner wall surface of the frame 102 sufficiently large.
02 is made larger, or the input / output terminal 104 is made smaller. When the size of the frame 102 is increased, the size of the semiconductor package is increased, which deviates from the recent trend of reducing the size and weight of the semiconductor package. On the other hand, when the input / output terminal 104 is reduced, the width of the line conductor 104a-A formed on the input / output terminal 104 must also be reduced. The loss of the high-frequency signal with the output terminal 104 may increase, or the lead terminal 105 may come off and input and output of the high-frequency signal may not be possible.

The line conductor 104 of the flat plate portion 104a
Although it is conceivable to prevent the brazing material from flowing into this portion by not forming the side ground conductors 104a-B only at the portion where the brazing material accumulation occurs on the side surface parallel to aA, A printing process is required for forming the metallized layer, and the working efficiency is greatly reduced.

Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to effectively prevent cracks occurring at input / output terminals fitted to a semiconductor package and increase the size of the semiconductor package. Another object of the present invention is to prevent input / output of a high-frequency signal from being impaired.

[0022]

A semiconductor package according to the present invention is mounted on a base having a mounting portion on which a semiconductor element is mounted on an upper surface and surrounding the mounting portion on the upper surface of the base. A flat plate made of a metal frame, a mounting portion for input / output terminals formed through or cut out of the frame, and a dielectric having a line conductor formed on one side from the other side to the opposite side on the upper surface. A semiconductor element housing package comprising: an upper portion of a flat portion and an upright wall portion made of a dielectric bonded to the upper surface of the flat plate portion with the line conductor interposed therebetween; and an input / output terminal fitted and bonded to the mounting portion. A cutout portion having a surface cut out substantially flush with a side surface inside the frame body of the upright wall portion is formed at a portion inside the frame body on a side surface of the flat plate portion.

According to the present invention, when the input / output terminal is fitted to the mounting portion with a brazing material such as silver brazing, the brazing material is composed of the side ground conductor of the flat plate portion and a metal material. It does not flow so as to fill a small gap with the inner wall surface of the frame. That is, there is no occurrence of brazing material accumulation in the gap. Therefore, due to the difference in thermal expansion between the brazing material and the portion located on the inner side of the frame on the side surface joined to the frame of the flat plate portion, and between the brazing material and the inner wall surface of the frame, respectively.
Cracks due to thermal strain are not generated in the flat plate portion having the lowest elasticity. Therefore, it is possible to prevent an increase in the size of the semiconductor package and damage to input and output of high-frequency signals, and to operate the semiconductor element normally and stably for a long period of time.

Conventionally, on the upper surface of the flat plate portion, the brazing material easily forms a meniscus at the boundary portion between the flat plate portion and the standing wall portion, so that it is easy to get wet along the boundary portion. As a result, the brazing material is joined to the frame of the flat plate portion. Was cut into the upper surface of the flat plate portion from the side surface to be cut, but the cutout having a surface cut out substantially flush with the side surface inside the frame body of the upright wall portion formed the brazing material at the boundary A meniscus is not formed in the portion, and it does not enter the upper surface of the flat plate portion. Therefore, it is possible to prevent cracks from being generated near the boundary due to the brazing material that has entered the upper surface of the flat plate portion.

In the present invention, preferably, the length of the cutout surface is 0.1 mm or more.

With the above configuration, it is possible to effectively prevent the accumulation of the brazing material and to effectively prevent the brazing material from getting wet along the boundary between the flat plate portion and the standing wall portion.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An optical semiconductor package according to the present invention will be described below. FIG. 1 is a perspective view of an optical semiconductor package of the present invention, and FIG. 2 is an enlarged perspective view of an input / output terminal provided in the semiconductor package.
1 is a base, 2 is a frame, 3 is a cylindrical fixing member for fixing a metal holder 7 to which an optical fiber is attached, 4 is an input / output terminal,
6 is a seal ring. The base 1, frame 2, fixing member 3, input / output terminal 4, and seal ring 6
A container is formed by housing a semiconductor element 9 as an optical semiconductor element such as D and PD, and attaching a lid to the upper surface of the seal ring 6.

The base 1 has a mounting portion 1a for mounting the semiconductor element 9 on its upper surface, functions as a support member for supporting the semiconductor element 9, and efficiently transfers heat generated when the semiconductor element 9 is operated to the outside. It has a function to dissipate well.

The substrate 1 has a substantially rectangular parallelepiped shape, such as a copper (Cu) -tungsten (W) alloy or a Fe-Ni
-It is made of a metal material such as a Co alloy. In addition, the ingot is formed into a predetermined shape by subjecting the ingot of the alloy to metal working such as rolling or pressing.

The substrate 1 has a metal having excellent corrosion resistance and excellent wettability with a brazing material on its surface, specifically, a Ni layer having a thickness of 0.5 to 9 μm, a Ni layer having a thickness of 0.5 to 9 μm, 5 μm A
u layer is sequentially applied by a plating method.
Can be effectively prevented from being oxidized and corroded.
The semiconductor element 9 can be firmly adhered and fixed on the upper surface. Therefore,
The surface of the substrate 1 has a Ni layer of 0.5 to 9 μm or a thickness of 0.5 to 9 μm.
It is preferable that a metal layer such as a 5 μm Au layer is applied by a plating method.

On the upper surface of the base 1, a mounting portion 1a
A mounting portion 2a formed of a through hole or a cut-out portion for fitting the input / output terminal 4 to the side portion and a through hole 2b functioning as an optical transmission path are formed on the other side portion so as to surround. The frame 2 is joined with a brazing material such as silver brazing, and a space for accommodating the semiconductor element 9 is formed inside the frame 2.

The frame 2 is made of the same metal material as the base 1, and is manufactured by a processing method similar to that of the base 1, so that the frame 2 has a mounting portion 2a on the side and a through hole 2b on the other side. It is processed into various shapes.

The joining of the frame 2 to the base 1 is performed by
The upper surface and the lower surface of the frame body 2 are joined via a brazing material such as silver brazing which is a preform having an appropriate volume laid on the upper surface of the base 1. Further, on the surface of the frame 2, similarly to the base 1, a Ni layer of 0.5 to 9 μm or a thickness of 0.5 to 5 μm
It is preferable that a metal layer such as an Au layer is applied by a plating method.

The mounting portion 2a of the frame 2 has a function of inputting / outputting a high-frequency signal between the semiconductor element 9 and an external electric circuit (not shown), and blocks the inside and outside of the optical semiconductor package. The input / output terminal 4 having the function of performing the above operation is joined with a brazing material such as silver brazing via a metallized layer provided on the input / output terminal 4.

The input / output terminal 4 has a substantially rectangular parallelepiped plate-shaped flat plate portion 4a, and a quadrangular prism-shaped standing wall portion 4b which is turned sideways in a substantially rectangular parallelepiped shape.

The flat plate portion 4a is made of alumina (Al ₂ O ₃ )
Ceramics, aluminum nitride (AlN) ceramics, mullite _{(3Al 2 O 3 · 2SiO 2} ) made of a dielectric material such as ceramics. Then, on the upper surface of the flat plate portion 4a,
W, Mo-Mn from one long side to the other side
A line conductor 4a-A made of a metallized layer such as that described above is formed. A lower ground conductor 4a-C made of the same metallized layer as the line conductor 4a-A is formed on the entire lower surface of the flat plate portion 4a, and a side surface H (FIG. 10) parallel to the line conductor 4a-A is formed on the side surface. 2), that is, a cutout portion 4 provided by cutting out a portion of the flat plate portion 4a of the side surface H located inside the frame body 2.
The side ground conductors 4a-B made of the same metallized layer as the line conductors 4a-A are formed in portions other than c.

When the input / output terminal 4 is fitted to the mounting portion 2a with a brazing material such as silver brazing, the notch 4c forms a frame formed of the side ground conductors 4a-B and a metal material. It can be effectively prevented from flowing so as to fill a small gap with the inner wall surface of the body 2. Since there are two side surfaces H, there are two gaps between the input / output terminal 4 and the frame 2. That is, by providing the cutout portion 4c, the brazing material does not accumulate in a slight gap between the side ground conductors 4a-B and the inner wall surface of the frame 2. Therefore, due to the difference in thermal expansion between the brazing material and the portion of the flat plate portion 4a located inside the frame 2, and between the brazing material and the inner wall surface of the frame 2, the flat plate portion 4a having the lowest elasticity. No thermal distortion or cracking occurs.

The cutout portion 4c is formed on the inner surface of the frame 2 on the side surface of the flat plate portion 4a joined to the frame 2, and is formed with a cutout substantially flush with the side surface on the inner side of the frame 2 of the upright wall 4b. P (FIG. 2), preferably a notch 4c, preferably with a length of plane P of 0.1
mm or more. The notch 4c may be provided in at least one place in the flat plate part 4a, and if the two places are formed to be less than 0.1 mm, the side ground conductor 4a
In a slight gap between -B and the inner wall surface of the frame 2, there is a tendency for brazing material to easily accumulate at both locations. for that reason,
Thermal strain generated by the difference in thermal expansion between the brazing material and the portion of the flat plate portion 4a located inside the frame 2 and between the brazing material and the inner wall surface of the frame 2 becomes large,
As a result, a large compressive thermal stress is applied to the flat plate portion 4a, and cracks are easily generated.

On the other hand, a notch 4 of 0.1 mm or more
c, if there is no notch 4c in another place,
Even if brazing material accumulates in a portion where the notch 4c is not provided, no brazing material accumulates in the other portion.
In this case, no crack was generated in the flat plate portion 4a, and it was found that no crack was generated in the flat plate portion 4a with the magnitude of the compressive thermal stress applied to the flat plate portion 4a in this case.

Accordingly, the notch 4c has a surface P cut out substantially flush with the side surface inside the frame 2 of the upright wall 4b at a portion located inside the frame 2 on the side surface H of the flat plate portion 4a. It is preferable that the length of the plane P is 0.1 mm or more and at least one such cutout 4c is provided.

The inner peripheral surface of the notch 4c, that is, the flat plate 4
The surface formed by cutting the side surface H of a can have various shapes such as an R surface and a C surface. The notch 4c is formed as shown in FIG.
It is not always necessary to cut out the entire inner surface of the flat plate portion 4a of the side surface H inside the frame body 2, and the shape in plan view including the surface P is semicircular, elliptical, concave, or the like. The cutout 4c may have a shape. In this case, the length of the cutout portion 4c in the direction of the line conductor 4a-A may be at least ３ of the entire length of the flat plate portion 4a on the side surface H inside the frame body 2, thereby forming a brazing material pool. Can be effectively prevented.

When the semiconductor package is an optical semiconductor package, the cutout portion 4c is formed on the side of the input / output terminal 4 closer to the side of the frame 2 to which the fixing member 3 for fixing the optical fiber 8 and the like is joined. It is preferably provided in the part. That is, when the notch 4c is not provided on the side near the side where the fixing member 3 is joined, the semiconductor element 9 is operated after the optical axis of the semiconductor element 9 and the optical fiber 8 are adjusted. When the heat generated by the semiconductor element 9 is transmitted to the frame 2, the residual heat stress between the brazing material and the inner wall surface of the frame 2 causes a large thermal strain in the frame 2. Therefore, the optical axes of the optical fiber 8 and the semiconductor element 9 are shifted, and the operability of the semiconductor element 9 is impaired. Therefore, when the semiconductor package is an optical semiconductor package, the notch 4c is preferably provided on a side near the side of the frame 2 to which the fixing member 3 of the input / output terminal 4 is joined.

An extra metallized layer is formed on the peripheral portion of the lamination interface between the flat plate portion 4a and the vertical wall portion 4b, that is, on the inside or outside of the frame 2 on the side surface of the flat plate portion 4a joined to the frame 2. In this case, the capacitance value between the line conductor 4a-A and the extra metallization layer increases, which may cause deterioration of transmission characteristics such as reflection due to impedance mismatch of a high-frequency signal. Therefore, notches 4a are formed at four places, two inside the frame 2 and two outside the frame 2, on the side surfaces of the flat plate 4a joined to the frame 2 so that no extra metallized layer is formed. It is good to provide.

Further, when an extra metallized layer is formed on the inside of the frame 2 or on the outside of the frame 2 on the side surface joined to the frame 2 of the flat plate 4a, the flat plate 4a and the upright wall on the upper surface of the flat plate 4a are formed. In some cases, the brazing material forms a meniscus at the boundary with the metal layer 4b and is easily wetted, and may enter the boundary. In that case, the brazing material that has invaded the boundary is the line conductor 4a-A
And a floating capacitance is generated between them, thereby deteriorating the transmission characteristics of the high-frequency signal. Therefore, in order to prevent such deterioration of the transmission characteristics, the four portions of the side surface of the flat plate portion 4a, which are joined to the frame 2, have two portions inside the frame 2 and two portions outside the frame 2.
A notch 4a is preferably provided at a location.

The line conductors 4a-A, the side ground conductors 4a-B and the lower ground conductors 4a-C of the flat plate portion 4a provided with such cutouts 4c are formed of a metallized layer of W, Mo, Mn or the like. It is, for example, an organic solvent,
A metal paste obtained by adding and mixing a solvent is formed by printing and applying a predetermined pattern on a ceramic green sheet for the flat plate portion 4a in advance by a conventionally known screen printing method, followed by baking.

An upright wall 4b is laminated on the upper surface of the flat plate 4a. The standing wall portion 4b is made of the same dielectric material as the flat plate portion 4a, and an upper grounding conductor 4b-A made of the same metallized layer as the line conductor 4a-A is formed on the entire upper surface thereof. A side surface ground conductor 4b-B made of the same metallization layer as the line conductors 104a-A is formed on the entire surface of the side surface substantially continuous with the side ground conductors 4a-B.

The upper ground conductor 4b-A and the side ground conductor 4b-B of the upright wall 4b are composed of a line conductor 4a-A, a side ground conductor 4a-B and a lower ground conductor 4 formed on the flat plate 4a.
It is formed by printing and applying a predetermined pattern in the same manner as a-C and baking it.

As described above, the input / output terminal 4 is composed of the upper ground conductor 4b-A, the side ground conductor 4b-B, the side ground conductor 4a-B and the lower ground conductor 4a-C. Has a pseudo-coaxial structure to improve the input and output of high-frequency signals, and is joined to a mounting portion 2a formed of a cutout or a through hole provided in the frame 2 via a brazing material such as silver brazing. Thus, the optical semiconductor package has a function of shutting off the inside and the outside. Furthermore, by the notch 4c,
Due to the difference in thermal expansion between the brazing material and the portion of the flat plate portion 4a located inside the frame 2, and between the brazing material and the inner wall surface of the frame 2, heat is applied to the flat plate portion 4a having the lowest elasticity. No distortion or cracking occurs. When the semiconductor package is an optical semiconductor package, the notch 4c is provided on the side of the input / output terminal 4 closer to the side of the frame 2 to which the fixing member 3 for fixing the optical fiber 8 and the like is joined. Is preferred as described above.

A portion of the line conductor 4a-A of the input / output terminal 4 led out of the frame 2 is used for inputting / outputting a high-frequency signal between an external electric circuit and the input / output terminal 104, and using
A lead terminal 5 made of a metal material such as a -Co alloy is joined with a brazing material such as silver brazing.

A through hole 2b is formed on the other side of the frame 2 to which the input / output terminal 4 is fitted.
One end face is joined with a brazing material such as silver brazing so as to surround the opening of the through hole 2b, and the other end face is provided with a metal holder 7 having an optical fiber 8 attached with an adhesive such as resin or the like. A fixing member 3 joined by the melting point brazing material is provided. The fixing member 3 is formed by processing the same material as the base 1 and the frame 2 into a desired shape by a similar processing method, and has a Ni layer of 0.5 to 9 μm or a 0.5 to 5 μm A metal layer such as an Au layer is preferably applied by plating.

As described above, the input / output terminal 4 and the fixing member 3
A seal ring 6 is joined to the upper surface of the frame body 2 to which is attached with a brazing material such as silver brazing. The seal ring 6 is attached to the frame 2
The upper surface is joined with a brazing material such as silver brazing to sandwich the input / output terminal 4, and functions as a medium for joining a lid for sealing the semiconductor element 9 to the upper surface by seam welding or the like.

An optical semiconductor package as a semiconductor package of the present invention is joined to a base 1 made of a metal material so as to surround a mounting portion 1a of a semiconductor element 9 on an upper surface thereof, and has a mounting portion 2a and a through hole 2b. Frame 2 made of a metal material having the same, and a brazing material such as silver brazing joined to the mounting portion 2a, between the brazing material and the portion of the flat plate portion 4a located inside the frame 2, and between the brazing material and the frame. The flat plate portion 4a is provided with an input / output terminal 4 that can effectively prevent the occurrence of thermal distortion and cracks due to a difference in thermal expansion between the inner wall surface and the inner wall surface. The input / output terminal 4 has at least one cutout portion 4c formed by cutting out a side surface of a portion of the flat plate portion 4a located inside the frame 2.

In such an optical semiconductor package, a semiconductor element 9 as an optical semiconductor element is mounted on the mounting portion 1a by Sn-Pb.
The line conductor 4a-A and the semiconductor element 9 are electrically connected by a bonding wire, and the optical fiber 8 is further fixed to the fixing member 3 with an adhesive such as a resin. After the attached metal holder 7 is joined with a low melting point brazing material such as Au-Sn, the lid is joined to the upper surface of the seal ring 6 by seam welding or the like, whereby an optical semiconductor device as a product is obtained.

In this optical semiconductor device, the optical semiconductor element 9 is optically excited by, for example, a drive signal supplied from an external electric circuit to transmit and receive the excited laser light and the like to and from the optical fiber 8. By doing so, it functions as a photoelectric conversion device that can transmit a large amount of information at high speed, and is often used in the field of optical communication and the like.

Thus, the present invention has a structure for effectively preventing cracks from occurring at the input / output terminals fitted to the semiconductor package. Problems such as damage can be solved. As a result, the semiconductor element can be normally and stably operated for a long time.

It should be noted that the present invention is not limited to the above embodiment, and that various changes may be made without departing from the scope of the present invention. For example, as shown in FIG. 3, the notch 4 c may be cut out not only at the portion located inside the frame 2 on the side surface of the flat plate portion 4 a but also at the portion located outside the frame body 2 on the side surface of the flat plate portion 4 a. In this case, the accumulation of the brazing material does not occur at a portion where the side surface of the flat plate portion 4a is located outside the frame body 2 and where the outside surface of the frame body 2 intersects. As a result, the thermal distortion generated when the input / output terminal 4 is fitted to the mounting portion 2a of the frame 2 can be made very small, and the joining thereof can be made stronger.

[0057]

According to the present invention, there is provided a semiconductor package having an input / output terminal composed of a flat plate made of a dielectric and an upright wall made of a dielectric. When the input / output terminals are provided in the semiconductor package via a brazing material, the brazing material and the flat plate are formed by forming a cutout having a surface cut out substantially flush with the side surface inside the frame body of the portion. Due to the difference in thermal expansion between the portion of the side surface of the portion located inside the frame and between the brazing material and the inner wall of the frame, thermal distortion and cracks are generated in the flat plate portion having the lowest elasticity. Never. As a result, it is possible to prevent an increase in the size of the semiconductor package and a loss of input and output of a high-frequency signal, and to operate the semiconductor element normally and stably for a long period of time.

Conventionally, the brazing material easily forms a meniscus at the boundary between the flat plate portion and the standing wall portion on the upper surface of the flat plate portion, so that the brazing material is easily wet along the boundary portion. Although it had penetrated the upper surface, the brazing material did not form a meniscus at the boundary because the cutout portion having a surface cut out substantially flush with the side surface inside the frame of the upright wall portion was formed. Therefore, it does not enter the upper surface of the flat plate portion. Therefore, due to the brazing material that has invaded the upper surface of the flat plate portion,
Cracks can be prevented from occurring near the boundary.

In the present invention, preferably, the length of the cutout surface which is substantially flush with the side surface inside the frame of the upright wall portion is 0.1 m.
When it is at least m, the formation of the brazing material pool can be effectively prevented, and the wetting of the brazing material along the boundary between the flat plate portion and the standing wall portion can be effectively prevented.

[Brief description of the drawings]

FIG. 1 is a perspective view showing one embodiment of a semiconductor package of the present invention.

FIG. 2 is an enlarged perspective view of an input / output terminal for the semiconductor package of FIG. 1;

FIG. 3 is an enlarged perspective view showing another embodiment of the input / output terminal of the present invention.

FIG. 4 is a perspective view of a conventional semiconductor package.

FIG. 5 shows input / output terminals for the semiconductor package of FIG. 4;

[Explanation of symbols]

 1: base 1a: mounting portion 2: frame 2a: mounting portion 4: input / output terminal 4a: flat plate portion 4b: standing wall portion 4c: notch portion 9: semiconductor element

Claims (2)

[Claims] A base having a mounting portion on which a semiconductor element is mounted on an upper surface, a metal frame attached to the upper surface of the base so as to surround the mounting portion, and A flat plate portion made of a dielectric having an input / output terminal mounting portion formed therethrough or cut out, and a line conductor formed from one side to the other side facing the upper surface, and the line conductor formed on the upper surface of the flat plate portion A semiconductor device housing package having an upright wall portion made of a dielectric joined to the mounting portion and having an input / output terminal fitted and joined to the mounting portion. A cut-out portion having a surface cut out substantially flush with a side surface of the upright wall portion inside the frame body. 2. The package for accommodating a semiconductor element according to claim 1, wherein the length of said cutout surface is 0.1 mm or more.