JP2002093748A - Imprinting apparatus and imprinting method - Google Patents

Imprinting apparatus and imprinting method

Info

Publication number
JP2002093748A
JP2002093748A JP2000282987A JP2000282987A JP2002093748A JP 2002093748 A JP2002093748 A JP 2002093748A JP 2000282987 A JP2000282987 A JP 2000282987A JP 2000282987 A JP2000282987 A JP 2000282987A JP 2002093748 A JP2002093748 A JP 2002093748A
Authority
JP
Japan
Prior art keywords
substrate
mold
temperature
pattern
sample stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000282987A
Other languages
Japanese (ja)
Inventor
Kimikichi Deguchi
公吉 出口
Nobuyuki Takeuchi
信行 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2000282987A priority Critical patent/JP2002093748A/en
Publication of JP2002093748A publication Critical patent/JP2002093748A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an imprinting apparatus and an imprinting method using it, capable of repeatedly pressing on the same substrate and transcribing a mold pattern over the entire substrate with high fidelity. SOLUTION: The apparatus comprises a sample platform 6 for lading a substrate 4, a head 2 to which a mold 1 is loaded, a sample stage 7 capable of moving a sample platform 6, so as to face an arbitrary position of the substrate 4 loaded on the sample platform 6 to the head 2, temperature control mechanism 8-1 and 8-2 for independently controlling the temperature of the head 2 and the sample platform 6 through heating and cooling, a pressing mechanism 3 for pressing the mold 1 on the substrate 4 with arbitrary pressure, and a UV-curing system 9 for irradiating UV light to only the pressed region for curing only the transcribed pattern formed on the relevant region, where alternate repeating of pressing and UV curing enables transcription of the pattern over the entire substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、鋳型を被加工基板にプ
レスすることにより任意のパタンを転写するインプリン
ト装置及びインプリント方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an imprint apparatus and an imprint method for transferring an arbitrary pattern by pressing a mold on a substrate to be processed.

【0002】[0002]

【従来の技術】近年、半導体集積回路や光回路の高集積
化が目覚ましい速度で実現されている。これを技術的に
支えているのは、これらの素子に対応するパタンをシリ
コン基板等に投影露光するリソグラフィ技術の進歩であ
る。工業用には、これまで紫外線を光源とした光リソグ
ラフィが主に用いられてきており、光源の波長を超高圧
水銀灯のg線の436nm、i線の365nm、KrF
エキシマレーザーの248nmと短くすることにより解
像性を向上してきた。さらに波長の短いArFエキシマ
レーザー193nmも開発された。しかしながら、これ
らの装置およびこれらを用いたデバイス製造プロセスは
非常に高価となるために、コスト的に少量多品種の素子
製造には適用できない。
2. Description of the Related Art In recent years, high integration of semiconductor integrated circuits and optical circuits has been realized at remarkable speed. Technically supporting this is the advance in lithography technology that projects a pattern corresponding to these elements onto a silicon substrate or the like. For industrial use, photolithography using ultraviolet light as a light source has been mainly used, and the light source wavelength is 436 nm for g-line of an ultra-high pressure mercury lamp, 365 nm for i-line, KrF
The resolution has been improved by shortening the excimer laser to 248 nm. A shorter wavelength 193 nm ArF excimer laser was also developed. However, these devices and the device manufacturing process using them are very expensive, so that they cannot be applied to the manufacture of various types of devices in small quantities in terms of cost.

【0003】これに対して鋳型を被加工基板にプレスす
るインプリント装置及びこれを用いたデバイス製造法
は、投影レンズ等の高価な部品、装置が必要でなくプロ
セスも簡便になるために、製造コストが安価になる利点
がある。このことから、今後応用範囲が広がるものとし
て期待されている。
On the other hand, an imprint apparatus that presses a mold onto a substrate to be processed and a device manufacturing method using the same do not require expensive parts and devices such as a projection lens, and the process is simple. There is an advantage that the cost is reduced. From this, it is expected that the range of application will expand in the future.

【0004】従来のインプリント装置およびインプリン
ト法では、鋳型をレジスト膜等の高分子膜が形成された
被加工基板にプレスするに際して、被加工基板の温度を
上げて鋳型を押し付けるのが通常である。被加工基板の
温度を上げることにより高分子膜の変動性が高まり、プ
レス圧力が下げられるとともにプレスの忠実度も上がる
利点がある。
In a conventional imprint apparatus and imprint method, when a mold is pressed onto a substrate on which a polymer film such as a resist film is formed, the temperature of the substrate is usually raised and the mold is pressed. is there. By increasing the temperature of the substrate to be processed, the variability of the polymer film is increased, and there is an advantage that the press pressure is reduced and the fidelity of the press is increased.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、プレス
した後に温度を上げた状態で放置すると、時間経過とと
もに高分子膜に形成された鋳型パタンの流動化が始ま
り、求めるパタン形状が得られない問題が生じていた。
このため、プレスした後に常温近くまで被加工基板の温
度を下げる対策がとられる。再度基板の温度を上げて、
同一基板上に繰り返しプレスを行う場合、前のパタンの
流動化が起こるため、基板全面にパタンを転写すること
ができなくなる問題があった。
However, if the temperature is raised after pressing, the mold pattern formed on the polymer film will begin to fluidize over time, and the desired pattern shape will not be obtained. Had occurred.
For this reason, measures are taken to lower the temperature of the substrate to be processed to near normal temperature after pressing. Raise the temperature of the substrate again,
When pressing is repeatedly performed on the same substrate, there is a problem that the pattern cannot be transferred to the entire surface of the substrate because fluidization of the previous pattern occurs.

【0006】本発明は、以上のような問題点を解決する
ためになされたものであり、同一基板上に繰り返しプレ
スすることを可能にし、基板全面に忠実度の高い鋳型パ
タンの転写が行えるインプリント装置及びそれを用いた
インプリント法を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is possible to repeatedly press the same substrate, and to transfer a high-fidelity mold pattern onto the entire surface of the substrate. An object of the present invention is to provide a printing apparatus and an imprint method using the same.

【0007】[0007]

【課題を解決するための手段】本発明のインプリント装
置は、高分子膜が形成された基板にパタンが形成されて
いる鋳型をプレスして、該鋳型のパタンを該高分子膜に
転写する装置において、該基板を装着する試料台と、該
鋳型が装着されるヘッドと、該ヘッドに対し該試料台に
装着された該基板の任意の位置が対向するように該試料
台を移動できる試料ステージと、該ヘッドと該試料台と
を加熱、冷却してそれぞれ独立に温度を制御するための
温調機構と、該基板と該鋳型とを任意の圧力で押し付け
るプレス機構と、プレスした領域のみに紫外線を照射
し、該領域に形成された転写パタンのみを硬化させるU
Vキュアシステムと、を具備し、プレスとUVキュアを
交互に繰り返すことにより基板全体へのパタン転写を可
能としたことを特徴とする。
An imprint apparatus according to the present invention presses a mold having a pattern formed on a substrate having a polymer film formed thereon, and transfers the pattern of the mold to the polymer film. In the apparatus, a sample stage on which the substrate is mounted, a head on which the mold is mounted, and a sample capable of moving the sample stage such that an arbitrary position of the substrate mounted on the sample stage is opposed to the head. A stage, a temperature control mechanism for heating and cooling the head and the sample stage to independently control the temperature, a press mechanism for pressing the substrate and the mold at an arbitrary pressure, and only a pressed area. Is irradiated with ultraviolet rays to cure only the transfer pattern formed in the area.
A V cure system, and the pattern transfer to the entire substrate is enabled by alternately repeating press and UV cure.

【0008】本発明のインプリント方法は、高分子膜が
形成された基板にパタンが形成された鋳型をプレスし
て、該鋳型の該パタンを該高分子膜に転写するインプリ
ント法において、熱を加えながら紫外線を照射すること
により架橋が起こる紫外線架橋型レジストを該高分子膜
として用い、該鋳型が装着されるヘッドと、該基板が装
着される試料台の温度を該レジストのガラス転移温度よ
りも高い温度に制御した状態で該鋳型と該基板とを押し
付けて該鋳型をプレスし、プレスした後に、前記試料台
の温度を該レジストのガラス転移温度よりも低い温度に
下げて両者を引き離し、引き続き、プレスした領域のみ
に紫外線を照射しながら、試料台をガラス転移温度より
低い温度から高い温度まで加熱することにより転写パタ
ンのみを硬化させるUVキュアを行うことにより基板に
パタン転写を行うことを特徴とする。
[0008] The imprinting method of the present invention is a method for imprinting, in which a pattern-formed mold is pressed on a substrate on which a polymer film is formed, and the pattern of the mold is transferred to the polymer film. Using a UV-crosslinkable resist that causes crosslinking by irradiating UV rays while adding the polymer as the polymer film, the temperature of the head on which the mold is mounted and the temperature of the sample table on which the substrate is mounted is determined by the glass transition temperature of the resist. The mold and the substrate are pressed against each other in a state where the temperature is controlled to a higher temperature, and the mold is pressed.After pressing, the temperature of the sample stage is lowered to a temperature lower than the glass transition temperature of the resist, and the two are separated from each other. Then, while irradiating only the pressed area with ultraviolet rays, the sample stage is heated from a temperature lower than the glass transition temperature to a temperature higher than the glass transition temperature to cure only the transfer pattern. And performing pattern transfer to the substrate by performing a V curing.

【0009】本発明のインプリント方法は、高分子膜が
形成された基板にパタンが形成された鋳型をプレスし
て、該鋳型の該パタンを該高分子膜に転写するインプリ
ント法において、熱を加えながら紫外線を照射すること
により架橋が起こる紫外線架橋型レジストを該高分子膜
として用い、該鋳型が装着されるヘッドと、該基板が装
着される試料台の温度を該レジストのガラス転移温度よ
りも高い温度に制御した状態で該鋳型と該基板とを押し
付けて該鋳型をプレスし、プレスした後に、前記試料台
の温度を該レジストのガラス転移温度よりも低い温度に
下げて両者を引き離し、引き続き、プレスした領域のみ
に紫外線を照射しながら、試料台をガラス転移温度より
低い温度から高い温度まで加熱することにより転写パタ
ンのみを硬化させるUVキュアを行い、さらに基板の場
所を変えながらプレスとUVキュアを交互に繰り返すこ
とにより基板全体にパタン転写を行うことを特徴とす
る。
[0009] The imprint method of the present invention is characterized in that, in the imprint method of pressing a mold on which a pattern is formed on a substrate on which a polymer film is formed and transferring the pattern of the mold to the polymer film, Using a UV-crosslinkable resist that causes crosslinking by irradiating UV rays while adding the polymer as the polymer film, the temperature of the head on which the mold is mounted and the temperature of the sample table on which the substrate is mounted is determined by the glass transition temperature of the resist. The mold and the substrate are pressed against each other in a state where the temperature is controlled to a higher temperature, and the mold is pressed.After pressing, the temperature of the sample stage is lowered to a temperature lower than the glass transition temperature of the resist, and the two are separated from each other. Then, while irradiating only the pressed area with ultraviolet rays, the sample stage is heated from a temperature lower than the glass transition temperature to a temperature higher than the glass transition temperature to cure only the transfer pattern. Performs V curing, further characterized by performing the pattern transfer to the entire substrate by repeating the press and UV cured alternately while changing the location of the substrate.

【0010】[0010]

【実施例】以下、本発明の実施例を説明する。Embodiments of the present invention will be described below.

【0011】図1は、本発明のインプリント装置及びイ
ンプリント法の典型的な実施例を説明する概略図であ
り、1は鋳型、2は鋳型装着ヘッド、3はプレス機構、
4は基板、5は高分子膜、6は試料台、7は試料ステー
ジ、8−1および8−2はそれぞれ鋳型と基板の温調機
構、9はUVキュアシステム、10は紫外線光源、11
は絞り、12は紫外線光路、13は紫外線である。
FIG. 1 is a schematic view illustrating a typical embodiment of an imprint apparatus and an imprint method according to the present invention, wherein 1 is a mold, 2 is a mold mounting head, 3 is a press mechanism,
4 is a substrate, 5 is a polymer film, 6 is a sample stage, 7 is a sample stage, 8-1 and 8-2 are temperature control mechanisms of a mold and a substrate, 9 is a UV cure system, 10 is an ultraviolet light source, 11
Denotes an aperture, 12 denotes an ultraviolet light path, and 13 denotes ultraviolet light.

【0012】先ず、鋳型1として、シリコン基板にドラ
イエッチング法で凸型の柱状パタンを0.7μm高さに
エッチングした後、4mm角に切り出したものを用い
た。これを鋳型へッド2に耐熱性の接着剤を用いて貼り
付けた。プレス転写すべき高分子膜5の材料として、熱
を加えながら紫外線を照射することにより架橋するレジ
ストである電子線描画用化学増幅ネガ型レジストSAL
601(シプレイ社)を用いた。なお、SAL601レ
ジストのガラス転移温度は120〜140℃である。
First, a mold 1 was used in which a convex columnar pattern was etched to a height of 0.7 μm on a silicon substrate by dry etching and then cut into 4 mm squares. This was adhered to the mold head 2 using a heat-resistant adhesive. As a material of the polymer film 5 to be press-transferred, a chemically amplified negative resist SAL for electron beam lithography, which is a resist cross-linked by irradiating ultraviolet rays while applying heat.
601 (Shipley) was used. The glass transition temperature of the SAL601 resist is 120 to 140C.

【0013】基板4としては、4インチシリコン基板を
用いた。基板上にレジストを0.3μm膜厚でスピン塗
布し、105℃で120秒間、ホットプレート上でベー
クした後、試料台6に真空吸着により装着した。
As the substrate 4, a 4-inch silicon substrate was used. A resist was spin-coated on the substrate to a thickness of 0.3 μm, baked on a hot plate at 105 ° C. for 120 seconds, and then mounted on the sample table 6 by vacuum suction.

【0014】プレスに先立ち鋳型ヘッド2と基板4の温
度が、それぞれ160℃と180℃になるように、温調
機構8−1と8−2を加熱して温度制御した。次に、プ
レス機構3を用いて鋳型ヘッド2を押し下げることによ
りプレスを行った。前記温度でプレスを開始し、圧力が
50MPaとなるようにして10分間プレスした。プレ
ス終了前5分間で、温調機構8−2に冷却水を流すこと
により基板温度を70℃まで下げて、両者を引き離し
た。なお、両者を引き離す際の基板温度はガラス転移温
度以下とするが、100℃未満が好ましい。100℃以
上では、レジストの剥離が発生する場合がある。
Prior to pressing, the temperature control mechanisms 8-1 and 8-2 were heated and temperature controlled so that the temperatures of the mold head 2 and the substrate 4 were 160 ° C. and 180 ° C., respectively. Next, pressing was performed by pressing down the mold head 2 using the press mechanism 3. Pressing was started at the above temperature, and pressing was performed for 10 minutes so that the pressure became 50 MPa. Five minutes before the end of the press, the substrate temperature was lowered to 70 ° C. by flowing cooling water through the temperature control mechanism 8-2, and the two were separated. In addition, the substrate temperature at the time of separating the both is set to be equal to or lower than the glass transition temperature, but is preferably lower than 100 ° C. If the temperature is higher than 100 ° C., peeling of the resist may occur.

【0015】引き続き、試料ステージ7を駆動して試料
台6がUVキュアシステム9の所定の位置にくるように
制御した。ここで、プレスした4mm角に紫外線を照射
しながら基板温度を70℃から110℃まで2分間で上
昇させて、1分間保持した後、2分間で180℃まで加
熱した。紫外線照射に際しては、紫外線光源10から放
射される紫外線の通過路にサイズが変えられる絞り11
と紫外線光路12を設けることにより、照射領域を4m
mに制限した。紫外線光源10には超高圧水銀灯を用い
た。波長帯としてはg線の436nmとI線の365n
mを含んでおり、強度は約50mW/cm2であった。
Subsequently, the sample stage 7 was driven to control the sample stage 6 to be at a predetermined position of the UV cure system 9. Here, the substrate temperature was raised from 70 ° C. to 110 ° C. in 2 minutes while irradiating the pressed 4 mm square with ultraviolet rays, and held for 1 minute, and then heated to 180 ° C. in 2 minutes. When irradiating with ultraviolet light, the aperture 11 whose size is changed to a passage of ultraviolet light emitted from the ultraviolet light source 10 is used.
And the ultraviolet light path 12 to provide an irradiation area of 4 m
m. An ultra-high pressure mercury lamp was used as the ultraviolet light source 10. The wavelength bands are 436 nm for g-line and 365 n for I-line.
m, and the intensity was about 50 mW / cm 2 .

【0016】UV照射により、鋳型が転写されたSAL
601パタンでは、レジストの架橋と硬化がすすみ、再
び、180℃に昇温してもプレスしたパタンの形状変化
は起こらなかった。UVキュアは、紫外線光源に320
nm以下の短波長成分が多く含まれることにより、より
効果が現れた。UVキュア終了後に試料台6を再度プレ
ス位置に戻し、基板上の位置を変えてプレスを行い、再
度UVキュアを行った。この工程を繰り返すことによ
り、4インチ基板上に20領域鋳型パタンを形成するこ
とができた。
The SAL on which the template has been transferred by UV irradiation
With the 601 pattern, crosslinking and curing of the resist proceeded, and the shape of the pressed pattern did not change even when the temperature was raised to 180 ° C again. UV cure is 320 UV light source
The effect was more prominent when a lot of short wavelength components of nm or less were included. After the completion of the UV curing, the sample table 6 was returned to the pressing position again, the position on the substrate was changed, the pressing was performed, and the UV curing was performed again. By repeating this step, a 20-region template pattern could be formed on the 4-inch substrate.

【0017】本発明によるUVキュアの効果は、SAL
601のように熱及び紫外線、電子線、X線で架橋する
ネガ型レジスト、特に、化学増幅型ネガレジストで最も
高い効果が得られた。ノボラックベースでジアゾナフト
キノン感光剤の従来から使用されている紫外線感光ポジ
型レジストにおいてもかなりの改善効果が認められた。
The effect of the UV cure according to the present invention is SAL
The highest effect was obtained with a negative resist such as 601 cross-linked by heat, ultraviolet rays, electron beams, and X-rays, particularly a chemically amplified negative resist. Novolak-based diazonaphthoquinone sensitizers, which have been used in the conventional UV-sensitive positive type resists, also showed a considerable improvement effect.

【0018】一方、UVキュアを行わない場合は、再度
180℃に温度を上げたとき前にプレスしたパタンのう
ち、微細なパタンほどパタン流れが発生し、繰り返して
パタン形成を行うことは不可能であった。
On the other hand, when UV curing is not performed, when the temperature is raised to 180 ° C. again, among the patterns pressed before, the finer the pattern, the more the pattern flow occurs, and it is impossible to form the pattern repeatedly. Met.

【0019】なお、本実施例ではUVキュアシステム9
をプレス機構3と離して構成したが、これらを一体化す
ればより効率的になることは明白である。
In this embodiment, the UV cure system 9 is used.
Are arranged apart from the press mechanism 3, but it is obvious that the integration becomes more efficient.

【0020】[0020]

【発明の効果】以上説明したように、本発明のインプリ
ント装置及びそれを用いたインプリント法は、鋳型をレ
ジスト膜等の高分子膜の基板へインプリントするに際し
て、鋳型が装着された鋳型ヘッドと基板が装着された試
料台を高分子膜のガラス転移温度以上の高温に加熱した
状態で鋳型をプレスすることにより低いプレス圧力で忠
実度の高いプレスを行うことができる。その後、基板の
温度を高分子膜のガラス転移温度以下に下げて両者を引
き離すことによりパタン変形を防ぎ、高分子膜が基板か
ら剥離して鋳型へ付着することを防ぐことができる。
As described above, the imprint apparatus and the imprint method using the same according to the present invention can be used to imprint a mold on a polymer film substrate such as a resist film. By pressing the mold while the sample stage on which the head and the substrate are mounted is heated to a temperature higher than the glass transition temperature of the polymer film, a high-fidelity press can be performed at a low press pressure. Thereafter, by lowering the temperature of the substrate below the glass transition temperature of the polymer film and separating them, pattern deformation can be prevented, and the polymer film can be prevented from peeling off from the substrate and adhering to the mold.

【0021】さらに、プレスした領域のみに紫外線を照
射しながら、基板の温度を高分子膜のガラス転移温度以
下の温度からそれ以上の温度まで加熱することにより効
率良くUVキュアすることが可能となる。プレスパタン
を硬化させることにより、再度加熱してもプレスしたパ
タンが変形しない対策を講じているので、同一基板上に
鋳型のプレスを繰り返し行うことが可能となる。
Further, by irradiating only the pressed region with ultraviolet rays, the substrate is heated from a temperature lower than or equal to the glass transition temperature of the polymer film to a temperature higher than the glass transition temperature. . By curing the press pattern, measures are taken to prevent the pressed pattern from being deformed even when heated again, so that the mold can be repeatedly pressed on the same substrate.

【0022】このため、本発明のインプリント装置及び
インプリント法を用いれば、生産性が上がり、製造コス
トの大幅な低減が図られる。
For this reason, by using the imprint apparatus and the imprint method of the present invention, the productivity is increased and the production cost is greatly reduced.

【0023】また、UVキュア時に最終的にガラス転移
温度以上の温度で熱処理を行っているので、パタン形成
後に処理されるエッチング等ガラス転移温度以上の高温
プロセスに前処理なしで導入しても、パタン変形が起こ
らないうえにガスの放出など問題がなくなる利点があ
る。
Further, since the heat treatment is finally performed at a temperature equal to or higher than the glass transition temperature during the UV curing, even if it is introduced without a pretreatment into a high temperature process having a glass transition temperature or higher, such as etching, which is performed after pattern formation, There is an advantage that pattern deformation does not occur and problems such as gas emission are eliminated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のインプリント装置及びインプリント法
の典型的な実施例を説明する概略図である。
FIG. 1 is a schematic diagram illustrating a typical embodiment of an imprint apparatus and an imprint method according to the present invention.

【符号の説明】[Explanation of symbols]

1・・・鋳型、 2・・・鋳型ヘッド、 3・・・プレス機構、 4・・・基板、 5・・・高分子膜、 6・・・試料台、 7・・・試料ステージ、 8−1、8−2・・・温調機構、 9・・・UVキュアシステム、 10・・・紫外線光源、 11・・・しぼり、 12・・・紫外線光路、 13・・・紫外線。 DESCRIPTION OF SYMBOLS 1 ... Mold, 2 ... Mold head, 3 ... Press mechanism, 4 ... Substrate, 5 ... Polymer film, 6 ... Sample stand, 7 ... Sample stage, 8- 1, 8-2: temperature control mechanism, 9: UV cure system, 10: ultraviolet light source, 11: squeezing, 12: ultraviolet light path, 13: ultraviolet light.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 高分子膜が形成された基板にパタンが形
成されている鋳型をプレスして、該鋳型のパタンを該高
分子膜に転写する装置において、 該基板を装着する試料台と、 該鋳型が装着されるヘッドと、 該ヘッドに対し該試料台に装着された該基板の任意の位
置が対向するように該試料台を移動できる試料ステージ
と、 該ヘッドと該試料台とを加熱、冷却してそれぞれ独立に
温度を制御するための温調機構と、 該基板と該鋳型とを任意の圧力で押し付けるプレス機構
と、 プレスした領域のみに紫外線を照射し、該領域に形成さ
れた転写パタンのみを硬化させるUVキュアシステム
と、を具備したことを特徴とするインプリント装置。
1. An apparatus for pressing a mold on which a pattern is formed on a substrate on which a polymer film is formed, and transferring the pattern of the mold to the polymer film, comprising: a sample stage on which the substrate is mounted; A head on which the mold is mounted, a sample stage capable of moving the sample table so that an arbitrary position of the substrate mounted on the sample table faces the head, and heating the head and the sample table A temperature control mechanism for cooling and independently controlling the temperature, a press mechanism for pressing the substrate and the mold at an arbitrary pressure, and irradiating only the pressed area with ultraviolet light to form the area. An imprint apparatus comprising: a UV cure system for curing only a transfer pattern.
【請求項2】 高分子膜が形成された基板にパタンが形
成された鋳型をプレスして、該鋳型の該パタンを該高分
子膜に転写するインプリント法において、 熱を加えながら紫外線を照射することにより架橋が起こ
る紫外線架橋型レジストを該高分子膜として用い、 該鋳型が装着されるヘッドと、該基板が装着される試料
台の温度を該レジストのガラス転移温度よりも高い温度
に制御した状態で該鋳型と該基板とを押し付けて該鋳型
をプレスし、 プレスした後に、前記試料台の温度を該レジストのガラ
ス転移温度よりも低い温度に下げて両者を引き離し、 引き続き、プレスした領域のみに紫外線を照射しなが
ら、試料台をガラス転移温度より低い温度から高い温度
まで加熱することにより転写パタンのみを硬化させるU
Vキュアを行い、さらに基板の場所を変えながらプレス
とUVキュアを交互に繰り返すことにより基板にパタン
転写を行うことを特徴とするインプリント方法。
2. An imprinting method in which a pattern-formed mold is pressed on a substrate on which a polymer film is formed, and the pattern of the mold is transferred to the polymer film. UV-cross-linking resist, which causes cross-linking as a result, is used as the polymer film, and the temperature of the head on which the mold is mounted and the sample stage on which the substrate is mounted are controlled to a temperature higher than the glass transition temperature of the resist. In this state, the mold and the substrate are pressed against each other to press the mold, and after the pressing, the temperature of the sample stage is lowered to a temperature lower than the glass transition temperature of the resist to separate them from each other. Only the transfer pattern is cured by heating the sample stage from a temperature lower than the glass transition temperature to a temperature higher than the glass transition temperature while irradiating only the ultraviolet rays to the sample stage.
An imprint method comprising performing V-curing, and further performing pattern transfer onto a substrate by alternately repeating pressing and UV curing while changing the location of the substrate.
【請求項3】 高分子膜が形成された基板にパタンが形
成された鋳型をプレスして、該鋳型の該パタンを該高分
子膜に転写するインプリント法において、 熱を加えながら紫外線を照射することにより架橋が起こ
る紫外線架橋型レジストを該高分子膜として用い、 該鋳型が装着されるヘッドと、該基板が装着される試料
台の温度を該レジストのガラス転移温度よりも高い温度
に制御した状態で該鋳型と該基板とを押し付けて該鋳型
をプレスし、 プレスした後に、前記試料台の温度を該レジストのガラ
ス転移温度よりも低い温度に下げて両者を引き離し、 引き続き、プレスした領域のみに紫外線を照射しなが
ら、試料台をガラス転移温度より低い温度から高い温度
まで加熱することにより転写パタンのみを硬化させるU
Vキュアを行うことにより基板全体にパタン転写を行う
ことを特徴とするインプリント方法。
3. An imprinting method of pressing a mold on which a pattern is formed on a substrate on which a polymer film is formed, and transferring the pattern of the mold to the polymer film, irradiating ultraviolet rays while applying heat. UV-cross-linking resist, which causes cross-linking as a result, is used as the polymer film, and the temperature of the head on which the mold is mounted and the sample stage on which the substrate is mounted are controlled to a temperature higher than the glass transition temperature of the resist. In this state, the mold and the substrate are pressed against each other to press the mold, and after the pressing, the temperature of the sample stage is lowered to a temperature lower than the glass transition temperature of the resist to separate them from each other. Only the transfer pattern is cured by heating the sample stage from a temperature lower than the glass transition temperature to a temperature higher than the glass transition temperature while irradiating only the ultraviolet rays to the sample stage.
An imprint method, wherein pattern transfer is performed on the entire substrate by performing V cure.
JP2000282987A 2000-09-19 2000-09-19 Imprinting apparatus and imprinting method Pending JP2002093748A (en)

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