JP2002064179A - Method of manufacturing semiconductor module - Google Patents

Method of manufacturing semiconductor module

Info

Publication number
JP2002064179A
JP2002064179A JP2000249478A JP2000249478A JP2002064179A JP 2002064179 A JP2002064179 A JP 2002064179A JP 2000249478 A JP2000249478 A JP 2000249478A JP 2000249478 A JP2000249478 A JP 2000249478A JP 2002064179 A JP2002064179 A JP 2002064179A
Authority
JP
Japan
Prior art keywords
semiconductor module
printed circuit
prepreg
circuit board
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000249478A
Other languages
Japanese (ja)
Other versions
JP4365515B2 (en
Inventor
Takashi Kariya
隆 苅谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP2000249478A priority Critical patent/JP4365515B2/en
Publication of JP2002064179A publication Critical patent/JP2002064179A/en
Application granted granted Critical
Publication of JP4365515B2 publication Critical patent/JP4365515B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method of simply and easily manufacturing a laminate type semiconductor module at a low cost. SOLUTION: An interlayer member 20 uses a prepreg 21. For forming conductive bumps 25 on the prepreg 21, through-holes 23 formed at specified positions are filled with a conductive paste 24. The through-hole 23 being open at both openings can prevent voids from being formed with filling the conductive paste 24, thereby improving the connection reliability. Compared with electroplating, a semiconductor module 1 can be manufactured simply and easily at a low cost. The prepregs 21 being half hardened and printed boards 2 are alternately laminated, heated and pressed to once melt and fluidize the prepregs 21 and they harden with time lapsed to adhere the printed boards 2 laid on the upside and downside. This eliminates the need of provision of adhesive layers and the semiconductor module 1 can be easily and simply manufactured at a low cost.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体モジュール
の製造方法に関するものである。
[0001] The present invention relates to a method for manufacturing a semiconductor module.

【0002】[0002]

【従来の技術】近年には、ICチップの高密度実装化に
対応するために、ICチップを積層した半導体モジュー
ルを製造する技術が開発されてきている。例えば、特開
平9−219490号公報、特開平10−135267
号公報、及び特開平10−163414号公報には、そ
のような積層パッケージが開示されている。
2. Description of the Related Art In recent years, in order to cope with high-density mounting of IC chips, a technique for manufacturing a semiconductor module in which IC chips are stacked has been developed. For example, JP-A-9-219490, JP-A-10-135267
Japanese Patent Application Laid-Open No. Hei 10-163414 discloses such a stacked package.

【0003】このような従来の技術では、TSOP(Th
in Small Outline Package)、TCP(Tape Carrier P
ackage)、BGA(Ball Grid Array)等のICパッケ
ージを一層毎に組み立てた後に、複数のICパッケージ
を積層する。このとき、各層間は、予め各パッケージに
設けられた外部接続用の端子を介して接続される。この
ように従来の工法では、多くの製造工程を経なければな
らないことから、加工コストが増加していた。
In such a conventional technique, TSOP (Th
in Small Outline Package), TCP (Tape Carrier P)
After assembling IC packages such as a package and a BGA (Ball Grid Array) for each layer, a plurality of IC packages are stacked. At this time, the respective layers are connected via external connection terminals provided in advance in the respective packages. As described above, in the conventional method, many manufacturing steps have to be performed, so that the processing cost has increased.

【0004】ところで、図6および図7には、上記のよ
うな従来の工法により製造された積層パッケージを示し
た。図6に示すものは、樹脂でモールドされたパッケー
ジを積層したものである。また、図7は、図6のパッケ
ージを搭載したモジュール基板の側面図および平面図で
ある。このICパッケージ100A、100Bには、I
C実装部106と、その上面に実装されたICチップ1
02と、ICチップ102と外部部品とを接続するリー
ド101と、ICチップ102とリード101とを樹脂
内部で接続するボンディングワイヤ103とが設けられ
ている。また、ICチップ102を含む所定の領域は、
樹脂体104により被覆されている。
FIGS. 6 and 7 show a laminated package manufactured by the conventional method as described above. FIG. 6 shows a laminate of packages molded with resin. FIG. 7 is a side view and a plan view of a module substrate on which the package of FIG. 6 is mounted. The IC packages 100A and 100B have I
C mounting portion 106 and IC chip 1 mounted on the upper surface
02, a lead 101 for connecting the IC chip 102 to an external component, and a bonding wire 103 for connecting the IC chip 102 and the lead 101 inside the resin. Further, a predetermined area including the IC chip 102 is:
It is covered with a resin body 104.

【0005】このような構造のICパッケージ100A
の上側には、他のICパッケージ100Bが積層された
状態とされて、基板105に実装されている。
[0005] The IC package 100A having such a structure.
On the upper side, another IC package 100B is stacked and mounted on the substrate 105.

【0006】[0006]

【発明が解決しようとする課題】上記のICパッケージ
100A、100Bを厚さ方向に積み重ねて、基板10
5に実装しようとすると、樹脂体104の厚みのために
総モジュール厚が厚くなってしまうという問題がある。
また、ICパッケージ100A、100Bを横方向に基
板105に実装する場合には、総モジュールが大きくな
るという問題がある。さらに、上下のパッケージ100
A、100Bは、それぞれのリード101によって基板
105に接続されているので、パッケージ100A、1
00Bの積層時に位置ずれが生じると、リード101間
が短絡してしまう可能性があった。
The above-mentioned IC packages 100A and 100B are stacked in the thickness direction to form a substrate 10
5, there is a problem that the total module thickness is increased due to the thickness of the resin body 104.
Further, when the IC packages 100A and 100B are mounted on the substrate 105 in the horizontal direction, there is a problem that the total module becomes large. Further, the upper and lower packages 100
A and 100B are connected to the substrate 105 by respective leads 101, so that the packages 100A and 100B
If the misalignment occurs during the stacking of 00B, there is a possibility that the leads 101 will be short-circuited.

【0007】今後は、例えばICカードや携帯電話等の
電子機器の小型化に伴い、ICパッケージに対しても、
更なる高密度化と薄型化が図られると考えられている
が、従来の工法によっては、そのような高密度・薄型化
を図ることは困難である。
[0007] In the future, with the miniaturization of electronic devices such as IC cards and mobile phones, for IC packages,
It is considered that further densification and thinning can be achieved, but it is difficult to achieve such high density and thinning by a conventional method.

【0008】この問題を解決するためには、ICチップ
102を樹脂体104でモールドする構成を変更し、例
えばプリント基板を層間部材を介して積層しながらその
層間にICチップを実装するという構成が考えられる。
このとき、層間部材としては、その上下両面に配される
配線回路間の接続を図るための導電性物質を充填したビ
アホールを備えたプリント基板を使用することができ
る。そのようなプリント基板を製造するためには、例え
ば片面銅張積層板の絶縁層を貫通して導体層に到達する
ビアホールを形成させ、このビアホール内に導電性ペー
ストを充填する、あるいは電解メッキによってメッキ金
属を充填するなどの方法が考えられる。
In order to solve this problem, the configuration in which the IC chip 102 is molded with the resin body 104 is changed. For example, a configuration is adopted in which the printed circuit boards are stacked via interlayer members and the IC chips are mounted between the layers. Conceivable.
At this time, as the interlayer member, a printed circuit board having a via hole filled with a conductive material for establishing a connection between wiring circuits arranged on the upper and lower surfaces thereof can be used. In order to manufacture such a printed circuit board, for example, a via hole that reaches the conductor layer through the insulating layer of the single-sided copper-clad laminate is formed, and a conductive paste is filled in the via hole, or by electrolytic plating. A method such as filling with a plating metal is conceivable.

【0009】しかし、導電性ペーストを充填する方法で
は、ビアホールの一方の開口が導体層により閉止されて
いること、半導体チップの収容に必要な空間を確保する
ために層間部材の厚みを厚くする必要があることから、
ビアホール内に導電性ペーストを隙間なく充填すること
が困難な場合がある。一方、電解メッキ法では多大な時
間と手間を要し、生産性が低下するおそれがある。ま
た、これらのプリント基板及び層間部材を積層する際に
は、各プリント基板と層間部材との間に接着層を設ける
ことが必要であり、コストが高くなるおそれがある。
However, in the method of filling the conductive paste, one opening of the via hole is closed by the conductive layer, and the thickness of the interlayer member needs to be increased in order to secure a space necessary for accommodating the semiconductor chip. Because there is
In some cases, it is difficult to fill the via holes with the conductive paste without gaps. On the other hand, the electrolytic plating method requires a great deal of time and labor, and may reduce productivity. Further, when laminating these printed boards and interlayer members, it is necessary to provide an adhesive layer between each printed board and the interlayer members, which may increase the cost.

【0010】本発明は、上記した事情に鑑みてなされた
ものであり、その目的は、積層型の半導体モジュールを
簡便かつ安価に製造できる方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for easily and inexpensively manufacturing a laminated semiconductor module.

【0011】[0011]

【課題を解決するための手段】上記の課題を解決するた
めの請求項1の発明に係る半導体モジュールの製造方法
は、所定の配線回路を形成させて一面側に半導体チップ
を実装したプリント基板を、前記配線回路に接続可能な
導電性バンプと前記半導体チップを収容可能な開口部と
を備えた層間部材を介して積層する半導体モジュールの
製造方法であって、前記層間部材となる絶縁性基材の両
面に保護フィルムを貼り付ける工程と、前記絶縁性基材
の所定の位置にスルーホールを形成する工程と、前記ス
ルーホールに導電性ペーストを充填して導電性バンプを
形成する工程と、前記保護フィルムを剥離する工程と、
前記絶縁性基材に前記半導体チップを収容可能な前記開
口部を形成する工程と、前記絶縁性基材と前記プリント
基板とを交互に積層して接着する工程とを経ることを特
徴とする。
According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor module, comprising the steps of: forming a predetermined wiring circuit on a printed circuit board having a semiconductor chip mounted on one surface side; A method of manufacturing a semiconductor module, comprising laminating via an interlayer member having a conductive bump connectable to the wiring circuit and an opening capable of accommodating the semiconductor chip, the insulating base material being the interlayer member Bonding a protective film on both sides of the insulating substrate, forming a through hole at a predetermined position of the insulating base material, filling the through hole with a conductive paste to form a conductive bump, Removing the protective film,
A step of forming the opening capable of accommodating the semiconductor chip in the insulating base; and a step of alternately stacking and bonding the insulating base and the printed board.

【0012】請求項2の発明は、請求項1に記載の半導
体モジュールの製造方法であって、前記絶縁性基材がプ
リプレグであることを特徴とする。
According to a second aspect of the present invention, there is provided the method of manufacturing a semiconductor module according to the first aspect, wherein the insulating base material is a prepreg.

【0013】ここで、プリプレグとは、基材に熱硬化性
樹脂を含浸させて加熱により半硬化状態としたものであ
り、基材としては例えば紙、ガラス布、ガラス不織布、
合成繊維布等が、熱硬化性樹脂としては例えばエポキシ
樹脂、フェノール樹脂等が使用できる。
Here, the prepreg is a material in which a base material is impregnated with a thermosetting resin to be in a semi-cured state by heating. Examples of the base material include paper, glass cloth, glass nonwoven fabric, and the like.
For example, an epoxy resin, a phenol resin or the like can be used as the thermosetting resin.

【0014】[0014]

【発明の作用、および発明の効果】請求項1の発明によ
れば、両面に保護フィルムを貼りつけた絶縁性基材の所
定の位置にスルーホールを形成させ、このスルーホール
に導電性ペーストを充填した後に、保護フィルムを剥離
することにより、絶縁性基材の両面に突出した導電性バ
ンプを形成することができる。この方法においては、両
方の開口が開放されたスルーホールに導電性ペーストを
充填するため、一方の開口が閉止されたビアホールの場
合と比較して、充填の際に孔内に隙間が生じてしまうこ
とを回避でき、接続信頼性を高めることができる。ま
た、時間と手間を要する電解メッキを行う必要がないた
め、簡便かつ安価に半導体モジュールを製造することが
できる。
According to the first aspect of the present invention, a through-hole is formed at a predetermined position of an insulating base material having a protective film attached to both surfaces thereof, and a conductive paste is applied to the through-hole. By peeling the protective film after filling, conductive bumps protruding on both surfaces of the insulating base material can be formed. In this method, since the conductive paste is filled into the through hole having both openings opened, a gap is generated in the hole at the time of filling as compared with the case of a via hole in which one opening is closed. Can be avoided, and the connection reliability can be improved. In addition, since it is not necessary to perform electrolytic plating that requires time and effort, a semiconductor module can be manufactured simply and inexpensively.

【0015】請求項2の発明によれば、絶縁性基材とし
てはプリプレグを使用する。プリプレグは半硬化状態で
あるため、プリント基板と交互に積層してプレスにより
加熱加圧することにより、上下に配されたプリント基板
と接着、硬化する。このため、プリント基板と層間部材
の間に接着層を形成させることが不要となり、簡便かつ
安価に半導体モジュールを製造することができる。
According to the second aspect of the present invention, a prepreg is used as the insulating base material. Since the prepreg is in a semi-cured state, the prepreg is alternately laminated with the printed circuit board, and is heated and pressed by a press to adhere to and harden the printed circuit board arranged vertically. Therefore, it is not necessary to form an adhesive layer between the printed board and the interlayer member, and the semiconductor module can be manufactured simply and at low cost.

【0016】[0016]

【発明の実施の形態】以下、本発明を具体化した一実施
形態について、図1〜図5を参照しつつ詳細に説明す
る。本実施形態の半導体モジュール1は、半導体チップ
3を実装したプリント基板2と層間部材20とを交互に
重ね合わせ、最下層にI/O配線基板30を重ねて熱プ
レスすることにより一体化された構造となっている(図
1参照)。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below in detail with reference to FIGS. The semiconductor module 1 according to the present embodiment is integrated by alternately stacking the printed circuit board 2 on which the semiconductor chip 3 is mounted and the interlayer member 20, stacking the I / O wiring board 30 on the lowermost layer, and hot pressing. It has a structure (see FIG. 1).

【0017】まず、半導体チップ3を実装したプリント
基板2の製造方法について説明する。
First, a method of manufacturing the printed circuit board 2 on which the semiconductor chip 3 is mounted will be described.

【0018】プリント基板2の出発材料は、片面銅張積
層板4である。この片面銅張積層板4は、例えば板状の
ガラス布エポキシ樹脂により形成される厚さ75μmの
絶縁性基板5の一方の面(図2において上面)に、全面
に厚さ12μmの銅箔6が貼り付けられた周知の構造で
ある。この片面銅張積層板4において、銅箔6とは反対
側の面をポリエチレンテレフタレート(PET)製の保
護フィルム7で保護しておく(図2A)。
The starting material of the printed circuit board 2 is a single-sided copper-clad laminate 4. The single-sided copper-clad laminate 4 is provided on one surface (upper surface in FIG. 2) of an insulating substrate 5 having a thickness of 75 μm and formed of, for example, a plate-like glass cloth epoxy resin. Is a well-known structure attached. In this single-sided copper-clad laminate 4, the surface opposite to the copper foil 6 is protected with a protective film 7 made of polyethylene terephthalate (PET) (FIG. 2A).

【0019】この保護フィルム7が施されている面側
(図2において下面側)から、所定の位置に例えばパル
ス発振型炭酸ガスレーザ加工装置によってレーザ照射を
行うことにより、絶縁性基板5を貫通して銅箔6に達す
るビアホール8を形成する(図2B)。加工条件は、パ
ルスエネルギーが2.0〜10.0mJ、パルス幅が1
〜100μs、パルス間隔が0.5ms以上、ショット
数が3〜50の範囲内であることが好ましい。次いで、
このビアホール8の内部に残留する樹脂を取り除くため
のデスミア処理を行う。その後、銅箔6面を保護フィル
ム7で保護しておき、銅箔6を一方の電極として電解メ
ッキ法によってビアホール8内にメッキ導体9を形成さ
せる(図2C)。なお、メッキ導体9の充填深さは、そ
の上面が保護フィルム7の表面と面一になる程度が好ま
しい。
By irradiating a laser beam to a predetermined position from the surface on which the protective film 7 is applied (the lower surface side in FIG. 2) using, for example, a pulse oscillation type carbon dioxide gas laser processing apparatus, the insulating substrate 5 is penetrated. Then, a via hole 8 reaching the copper foil 6 is formed (FIG. 2B). The processing conditions were such that the pulse energy was 2.0 to 10.0 mJ and the pulse width was 1
Preferably, the pulse interval is 0.5 ms or more, and the number of shots is 3 to 50. Then
A desmear process for removing the resin remaining inside the via hole 8 is performed. Thereafter, the surface of the copper foil 6 is protected by a protective film 7, and a plated conductor 9 is formed in the via hole 8 by electrolytic plating using the copper foil 6 as one electrode (FIG. 2C). The filling depth of the plated conductor 9 is preferably such that the upper surface thereof is flush with the surface of the protective film 7.

【0020】次に、銅箔6側の保護フィルム7を剥離し
た後に、感光性のドライフィルム10を貼りつける。こ
のドライフィルム10を所定のパターンにより露光・現
像処理することにより、孔部11を形成する(図2
D)。この孔部11内に電解メッキを施すことにより、
半導体チップ3を実装するための実装用バンプ12とな
るメッキ層を形成する(図2E)。
Next, after the protective film 7 on the copper foil 6 side is peeled off, a photosensitive dry film 10 is attached. The hole 11 is formed by exposing and developing the dry film 10 in a predetermined pattern.
D). By applying electrolytic plating to the inside of the hole 11,
A plating layer serving as a mounting bump 12 for mounting the semiconductor chip 3 is formed (FIG. 2E).

【0021】その後、ドライフィルム10を剥離し、実
装用バンプ12を突出させる。同時に、下面側の保護フ
ィルム7を剥離することで、メッキ導体9の先端部が絶
縁性基板5の表面から突出されて接続用バンプ13とさ
れる(図3F)。
Thereafter, the dry film 10 is peeled off, and the mounting bumps 12 are projected. At the same time, by peeling off the protective film 7 on the lower surface side, the tip end of the plated conductor 9 is projected from the surface of the insulating substrate 5 to be a connection bump 13 (FIG. 3F).

【0022】次いで、電着法により、上面側全面と下面
側の接続用バンプ13上にフォトレジスト層14を形成
させる(図3G)。次に、上面側のフォトレジスト層1
4を所定の配線回路15のパターンに合わせて露光・現
像処理する。この後、フォトレジスト層14により保護
されていない銅箔6部分をエッチング処理することによ
り、配線回路15を形成させる(図3H)。配線回路1
5の一部は、後述する層間部材20の導電性バンプ25
と接続するための接続用ランド15Aとされている。最
後に、フォトレジスト層14を除去することにより、プ
リント基板2の製造が完了する(図3I)。
Next, a photoresist layer 14 is formed on the entire upper surface side and the lower surface side of the connection bump 13 by an electrodeposition method (FIG. 3G). Next, the photoresist layer 1 on the upper surface side
4 is exposed and developed according to a predetermined pattern of the wiring circuit 15. Thereafter, the wiring circuit 15 is formed by etching the copper foil 6 that is not protected by the photoresist layer 14 (FIG. 3H). Wiring circuit 1
5 are electrically conductive bumps 25 of the interlayer member 20 described later.
And a connection land 15A for connection to the terminal. Finally, by removing the photoresist layer 14, the manufacture of the printed circuit board 2 is completed (FIG. 3I).

【0023】このプリント基板2の上面側の中央部分に
は、半導体チップ3が実装される(図3J)。半導体チ
ップ3は、プリント基板2の中央に接着層16により固
着され、半導体チップ3の下面側に形成された端子部
(図示せず)が実装用バンプ12に埋め込まれることに
より、プリント基板2の配線回路15と電気的に接続さ
れる。
A semiconductor chip 3 is mounted on a central portion on the upper surface side of the printed board 2 (FIG. 3J). The semiconductor chip 3 is fixed to the center of the printed board 2 by an adhesive layer 16, and a terminal portion (not shown) formed on the lower surface side of the semiconductor chip 3 is embedded in the mounting bump 12, so that the printed circuit board 2 It is electrically connected to the wiring circuit 15.

【0024】次に、層間部材20の製造方法について説
明する。
Next, a method of manufacturing the interlayer member 20 will be described.

【0025】層間部材20の出発材料は、例えばガラス
布基材にエポキシ樹脂を含浸し、加熱半硬化状態として
板状に形成されたプリプレグ21である(図4A)。こ
のプリプレグ21の厚さは、後述のキャビティ(本発明
の開口部に該当する)26内に半導体チップ3を収容す
る必要性から、プリント基板2の上面から半導体チップ
3の上面までの高さよりもやや厚く、例えば130μm
とされている。また、プリプレグ21の上面および下面
の面積は対向するプリント基板2の面積と略等しくされ
ている。
The starting material of the interlayer member 20 is, for example, a prepreg 21 formed by impregnating a glass cloth base material with an epoxy resin and forming a semi-cured state in a plate shape (FIG. 4A). The thickness of the prepreg 21 is larger than the height from the upper surface of the printed circuit board 2 to the upper surface of the semiconductor chip 3 due to the necessity of accommodating the semiconductor chip 3 in a cavity 26 (corresponding to an opening of the present invention) described later. Somewhat thick, for example 130 μm
It has been. The area of the upper surface and the lower surface of the prepreg 21 is substantially equal to the area of the opposing printed circuit board 2.

【0026】このプリプレグ21の両面をPET製の保
護フィルム22で保護しておき(図4B)、対向するプ
リント基板2の接続用ランド15Aおよび接続用バンプ
13に対応する位置に、例えばパルス発振型炭酸ガスレ
ーザ加工装置によってレーザ照射を行うことにより、プ
リプレグ21の厚さ方向に貫通するスルーホール23を
形成させる(図4C)。次いで、このスルーホール23
内部に残留する樹脂を取り除くデスミア処理を行う。
Both sides of the prepreg 21 are protected by a protective film 22 made of PET (FIG. 4B), and a pulse oscillation type is provided at a position corresponding to the connection land 15A and the connection bump 13 of the printed board 2 facing each other. By performing laser irradiation with a carbon dioxide laser processing apparatus, a through hole 23 penetrating in the thickness direction of the prepreg 21 is formed (FIG. 4C). Next, this through hole 23
A desmear process is performed to remove the resin remaining inside.

【0027】このスルーホール23内に、導電性ペース
ト24を充填する(図4D)。充填は、例えばスクリー
ン印刷機を使用して導電性ペースト24を保護フィルム
22上から印刷することにより行うことができる。そし
て、保護フィルム22を剥離すると、導電性ペースト2
4は保護フィルム22の厚さ分だけプリプレグ21の表
面から突出されて導電性バンプ25とされる(図4
E)。
The conductive paste 24 is filled in the through holes 23 (FIG. 4D). The filling can be performed, for example, by printing the conductive paste 24 on the protective film 22 using a screen printing machine. When the protective film 22 is peeled off, the conductive paste 2
4 protrudes from the surface of the prepreg 21 by the thickness of the protective film 22 to form conductive bumps 25 (FIG. 4).
E).

【0028】そして、プリプレグ21の中央部分に例え
ばレーザ照射を行うことによりキャビティ26を貫通形
成させて、層間部材20の製造が完了する(図4F)。
キャビティ26の大きさは半導体チップ3の外形寸法よ
りやや大きくされて、その内部に半導体チップ3を収容
可能とされている。
Then, the center portion of the prepreg 21 is irradiated with a laser beam, for example, to penetrate the cavity 26 to complete the manufacture of the interlayer member 20 (FIG. 4F).
The size of the cavity 26 is slightly larger than the outer dimensions of the semiconductor chip 3 so that the semiconductor chip 3 can be accommodated therein.

【0029】上記のように製造されたプリント基板2と
層間部材20とを交互に重ね合わせる(図5A)。この
とき、最上層にはプリント基板2が、半導体チップ3を
実装された面が下面側になるように配置され、その下方
には層間部材20が配置される。層間部材20は、その
キャビティ26内にプリント基板2の半導体チップ3を
収容し、また、導電性バンプ25がプリント基板2の接
続用ランド15Aおよび接続用バンプ13と接続可能な
ように重ね合わせられる。そして、その下方にはさらに
プリント基板2および層間部材20が同様に重ね合わせ
られ、最下層にはI/O配線基板30が積層される。こ
のI/O配線基板30は、絶縁性基板33の所定の位置
にビアホール34が形成され、その上下に所定の配線回
路(図示せず)およびランド31が形成されたものであ
る。
The printed board 2 manufactured as described above and the interlayer member 20 are alternately overlapped (FIG. 5A). At this time, the printed board 2 is arranged on the uppermost layer such that the surface on which the semiconductor chip 3 is mounted is on the lower surface side, and the interlayer member 20 is arranged below the printed circuit board 2. The interlayer member 20 accommodates the semiconductor chip 3 of the printed circuit board 2 in its cavity 26 and is overlapped so that the conductive bump 25 can be connected to the connection land 15A and the connection bump 13 of the printed circuit board 2. . Then, the printed circuit board 2 and the interlayer member 20 are further overlapped under the same, and the I / O wiring board 30 is stacked on the lowermost layer. The I / O wiring board 30 has a via hole 34 formed at a predetermined position of an insulating substrate 33, and a predetermined wiring circuit (not shown) and a land 31 formed above and below it.

【0030】次いで、プレスにより加圧加熱を行うと、
プリプレグ21はいったん溶融流動し、時間の経過に伴
って硬化するとともに上下のプリント基板2およびI/
O配線基板30と接着して、半導体モジュール1が形成
される。このとき、各プリント基板2の接続用ランド1
5A、接続用パンプ13、およびI/O配線基板30の
ランド31と、隣接する層間部材20の導電性バンプ2
5とが接続されており、これにより上下のプリント基板
2およびI/O配線基板30の配線回路間が電気的に接
続される。また、I/O配線基板30の下面側のランド
31には、外部基板との接続用のはんだボール32が形
成される。
Next, when pressure and heating are performed by a press,
The prepreg 21 melts and flows once, hardens with the passage of time, and the upper and lower printed circuit boards 2 and the I / O
The semiconductor module 1 is formed by bonding to the O wiring board 30. At this time, the connection lands 1 of each printed circuit board 2
5A, connection pump 13 and land 31 of I / O wiring board 30 and conductive bump 2 of adjacent interlayer member 20
5 is electrically connected to the upper and lower printed circuit boards 2 and the wiring circuits of the I / O wiring board 30. Further, a solder ball 32 for connection to an external substrate is formed on a land 31 on the lower surface side of the I / O wiring board 30.

【0031】以上のように本実施形態によれば、層間部
材20としてプリプレグ21を使用する。プリプレグ2
1に導電性バンプ25を形成する際には、所定の位置に
形成させたスルーホール23に導電性ペースト24を充
填する。このスルーホール23は両方の開口が開放され
ているため、導電性ペースト24の充填の際に孔内に隙
間が生じてしまうことを回避でき、接続信頼性を高める
ことができる。また、時間と手間を要する電解メッキを
行う必要がないため、簡便かつ安価に半導体モジュール
1を製造することができる。
As described above, according to the present embodiment, the prepreg 21 is used as the interlayer member 20. Prepreg 2
When the conductive bumps 25 are formed on the substrate 1, the conductive paste 24 is filled in the through holes 23 formed at predetermined positions. Since both openings of the through hole 23 are open, it is possible to avoid a gap in the hole when the conductive paste 24 is filled, and it is possible to improve connection reliability. In addition, since it is not necessary to perform time-consuming and time-consuming electrolytic plating, the semiconductor module 1 can be manufactured simply and inexpensively.

【0032】また、プリプレグ21は半硬化状態である
ため、プリント基板2と交互に積層して加熱加圧するこ
とによりいったん溶融流動し、時間の経過とともに硬化
して上下に配されたプリント基板2と接着する。このた
め、プリント基板2と層間部材20の間に接着層を設け
ることが不要となり、簡便かつ安価に半導体モジュール
1を製造することができる。
Further, since the prepreg 21 is in a semi-cured state, the prepreg 21 is alternately laminated with the printed circuit board 2 and once melted and flowed by heating and pressurizing, is cured over time, and is hardened with the printed circuit board 2 arranged vertically. Glue. Therefore, it is not necessary to provide an adhesive layer between the printed board 2 and the interlayer member 20, and the semiconductor module 1 can be manufactured simply and inexpensively.

【0033】なお、本発明の技術的範囲は、上記した実
施形態によって限定されるものではなく、例えば、次に
記載するようなものも本発明の技術的範囲に含まれる。
その他、本発明の技術的範囲は、均等の範囲にまで及ぶ
ものである。 (1)本実施形態では、半導体モジュール1はそれぞれ
2枚のプリント基板2と層間部材20、およびI/O配
線基板30の5層で構成されているいるが、本発明によ
れば積層枚数は本実施形態の限りではなく、例えば1枚
のプリント基板、層間部材およびI/O配線基板の3層
で構成されてもよい。あるいはそれぞれ3枚のプリント
基板と層間部材、およびI/O配線基板の7層で構成さ
れてもよく、さらに多層化させてもよい。 (2)本実施形態では、電解メッキ法によってメッキ導
体9を形成させているが、本発明によればメッキ導体の
形成方法は本実施形態の限りではなく、例えば無電界メ
ッキによって形成させてもよい。
The technical scope of the present invention is not limited by the above-described embodiments, and for example, the following ones are also included in the technical scope of the present invention.
In addition, the technical scope of the present invention extends to an equivalent range. (1) In the present embodiment, the semiconductor module 1 is composed of two layers each of the two printed boards 2, the interlayer member 20, and the I / O wiring board 30. The present invention is not limited to this embodiment, and may be configured by, for example, three layers of one printed board, an interlayer member, and an I / O wiring board. Alternatively, each of them may be constituted by seven layers of three printed boards, an interlayer member, and an I / O wiring board, or may be further multilayered. (2) In the present embodiment, the plated conductor 9 is formed by the electrolytic plating method. However, according to the present invention, the method of forming the plated conductor is not limited to the present embodiment. For example, the plated conductor 9 may be formed by electroless plating. Good.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本実施形態におけるプリント基板と層間部材と
を積層させて半導体モジュールを製造する前の様子を示
す斜視図
FIG. 1 is a perspective view showing a state before a semiconductor module is manufactured by stacking a printed circuit board and an interlayer member according to an embodiment.

【図2】プリント基板の製造方法を示す断面図−1FIG. 2 is a sectional view showing a method for manufacturing a printed circuit board-1.

【図3】プリント基板の製造方法を示す断面図−2FIG. 3 is a cross-sectional view illustrating a method of manufacturing a printed circuit board.

【図4】層間部材の製造方法を示す断面図FIG. 4 is a cross-sectional view illustrating a method for manufacturing an interlayer member.

【図5】プリント基板と層間部材とを積層させた断面図FIG. 5 is a cross-sectional view in which a printed board and an interlayer member are laminated.

【図6】従来におけるICパッケージの側断面図FIG. 6 is a side sectional view of a conventional IC package.

【図7】(a)従来におけるICパッケージを実装した
基板の側面図 (b)従来におけるICパッケージを実装した基板の平
面図
7A is a side view of a substrate on which a conventional IC package is mounted. FIG. 7B is a plan view of a substrate on which a conventional IC package is mounted.

【符号の説明】[Explanation of symbols]

1…半導体モジュール 2…プリント基板 3…半導体チップ 5…絶縁性基材 15…配線回路 20…層間部材 21…プリプレグ 22…保護フィルム 23…スルーホール 24…導電性ペースト 25…導電性バンプ 26…キャビティ(開口部) DESCRIPTION OF SYMBOLS 1 ... Semiconductor module 2 ... Printed circuit board 3 ... Semiconductor chip 5 ... Insulating base material 15 ... Wiring circuit 20 ... Interlayer member 21 ... Prepreg 22 ... Protective film 23 ... Through hole 24 ... Conductive paste 25 ... Conductive bump 26 ... Cavity (Aperture)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 所定の配線回路を形成させて一面側に半
導体チップを実装したプリント基板を、前記配線回路に
接続可能な導電性バンプと前記半導体チップを収容可能
な開口部とを備えた層間部材を介して積層する半導体モ
ジュールの製造方法であって、 前記層間部材となる絶縁性基材の両面に保護フィルムを
貼り付ける工程と、前記絶縁性基材の所定の位置にスル
ーホールを形成する工程と、前記スルーホールに導電性
ペーストを充填して導電性バンプを形成する工程と、前
記保護フィルムを剥離する工程と、前記絶縁性基材に前
記半導体チップを収容可能な前記開口部を形成する工程
と、前記絶縁性基材と前記プリント基板とを交互に積層
して接着する工程とを経ることを特徴とする半導体モジ
ュールの製造方法。
1. A printed circuit board on which a predetermined wiring circuit is formed and a semiconductor chip is mounted on one surface side of a printed circuit board is formed by an interlayer having conductive bumps connectable to the wiring circuit and an opening capable of accommodating the semiconductor chip. A method of manufacturing a semiconductor module to be laminated via a member, wherein a step of attaching protective films to both surfaces of an insulating base material serving as the interlayer member and forming a through hole at a predetermined position of the insulating base material Forming a conductive bump in the through-hole by filling the through-hole with a conductive paste, removing the protective film, and forming the opening capable of accommodating the semiconductor chip in the insulating base material. And a step of alternately laminating and bonding the insulating base material and the printed circuit board.
【請求項2】 前記絶縁性基材がプリプレグであること
を特徴とする請求項1に記載の半導体モジュールの製造
方法。
2. The method according to claim 1, wherein the insulating substrate is a prepreg.
JP2000249478A 2000-08-21 2000-08-21 Manufacturing method of semiconductor module Expired - Fee Related JP4365515B2 (en)

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Publication Number Publication Date
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JP4365515B2 JP4365515B2 (en) 2009-11-18

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327021B2 (en) 2004-12-16 2008-02-05 Matsushita Electric Industrial Co., Ltd. Multi-level semiconductor module
US7365416B2 (en) 2004-12-16 2008-04-29 Matsushita Electric Industrial Co., Ltd. Multi-level semiconductor module and method for fabricating the same
JP2009158641A (en) * 2007-12-26 2009-07-16 Murata Mfg Co Ltd Method of producing module with built-in component
US7586183B2 (en) 2005-04-19 2009-09-08 Panasonic Corporation Multilevel semiconductor module and method for fabricating the same
KR100991744B1 (en) * 2008-09-03 2010-11-04 한국전자통신연구원 Vertical connector, semiconductor package having vertical connector and methods for fabricating vertical connector and semiconducor package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283608A (en) * 1992-03-31 1993-10-29 Toshiba Corp Resin-sealed semiconductor device and manufacture thereof
JPH09232503A (en) * 1996-02-21 1997-09-05 Hitachi Ltd Three-dimensional laminate module
JPH1145955A (en) * 1997-07-28 1999-02-16 Kyocera Corp Device built-in multilayered printed circuit board and its manufacture
JPH11186698A (en) * 1997-12-18 1999-07-09 Matsushita Electric Ind Co Ltd Manufacture of circuit board, and circuit board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283608A (en) * 1992-03-31 1993-10-29 Toshiba Corp Resin-sealed semiconductor device and manufacture thereof
JPH09232503A (en) * 1996-02-21 1997-09-05 Hitachi Ltd Three-dimensional laminate module
JPH1145955A (en) * 1997-07-28 1999-02-16 Kyocera Corp Device built-in multilayered printed circuit board and its manufacture
JPH11186698A (en) * 1997-12-18 1999-07-09 Matsushita Electric Ind Co Ltd Manufacture of circuit board, and circuit board

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327021B2 (en) 2004-12-16 2008-02-05 Matsushita Electric Industrial Co., Ltd. Multi-level semiconductor module
US7365416B2 (en) 2004-12-16 2008-04-29 Matsushita Electric Industrial Co., Ltd. Multi-level semiconductor module and method for fabricating the same
US7586183B2 (en) 2005-04-19 2009-09-08 Panasonic Corporation Multilevel semiconductor module and method for fabricating the same
JP2009158641A (en) * 2007-12-26 2009-07-16 Murata Mfg Co Ltd Method of producing module with built-in component
KR100991744B1 (en) * 2008-09-03 2010-11-04 한국전자통신연구원 Vertical connector, semiconductor package having vertical connector and methods for fabricating vertical connector and semiconducor package

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