JP2002062276A - Gas detector, and operation method therefor - Google Patents
Gas detector, and operation method thereforInfo
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- JP2002062276A JP2002062276A JP2000247264A JP2000247264A JP2002062276A JP 2002062276 A JP2002062276 A JP 2002062276A JP 2000247264 A JP2000247264 A JP 2000247264A JP 2000247264 A JP2000247264 A JP 2000247264A JP 2002062276 A JP2002062276 A JP 2002062276A
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- gas
- detected
- detection
- temperature
- temperatures
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、金属酸化物半導体
を主成分とするガス感応部を備え、前記ガス感応部を複
数種の検知温度に設定切換した場合に、夫々の前記検知
温度で異なる被検知ガスを検知可能なガス検知装置及び
その運転方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a gas sensitive portion mainly composed of a metal oxide semiconductor, and when the gas sensitive portion is switched to a plurality of types of detection temperatures, the detection temperature differs for each of the detection temperatures. The present invention relates to a gas detection device capable of detecting a gas to be detected and an operation method thereof.
【０００２】[0002]
【従来の技術】上記の金属酸化物半導体として酸化イン
ジウム半導体を主成分とするガス感応部を備えたガス検
知装置における、被検知ガスとしての一酸化炭素ガス
（ＣＯ）の検知にあっては、ＣＯ検知用に、酸化インジ
ウムにＣＯガス増感剤としてＲｕ、Ａｕ、Ｐｔ、Ｐｄ、
Ｒｈ、Ａｇ等の貴金属を添加したものが知られている。
これらのガス検知装置では、ＣＯガス感度が１５０℃以
下、常温までの低温側で高く、また、水素ガス
（Ｈ2 ）、エタノール等の妨害ガスに対する感度が、逆
に１００℃以下において低くなる。そのためＣＯガス選
択性を得るためにＣＯガスの検知温度を常温程度にして
使用される。しかし、このように素子温度が、１００℃
程度の低温になると、吸着したＣＯガスが脱着しにくい
ため、一旦素子温度を上昇させ脱着しなければならず、
そのためのパージが必要であった（特公昭５３−４３３
２０号公報、特公昭５８−３０５３５号公報）。それに
対し、より高温で動作できる（２５０℃以上）酸化ズス
半導体ＣＯガス検知用のセンサとして、酸化スズにＰ
ｔ、Ａｕ、Ｐｄ等の貴金属を、上述のセンサより少量
（０．０４５重量％以下）添加したものが知られている
（特公平６−１７８８４号）。このガス検知装置にあっ
ては、ＣＯガス感度のピークが２５０℃前後まで上昇
し、この温度より少し低い温度域（これが一酸化炭素ガ
ス検知温度）でＣＯガスを検知する。このようなガス検
知装置は、比較的高温のＣＯガス検知温度域において、
速い応答速度で、妨害ガスである水素ガス、メタン（Ｃ
Ｈ4 ）さらには、イソブタン（ｉ−Ｃ4 Ｈ10）等の炭化
水素に対して、選択性を有してＣＯガスを検知できる。2. Description of the Related Art In the detection of carbon monoxide gas (CO) as a gas to be detected in a gas detection device provided with a gas sensing portion mainly containing an indium oxide semiconductor as a metal oxide semiconductor, For CO detection, Ru, Au, Pt, Pd, and CO gas sensitizers were added to indium oxide.
What added a noble metal, such as Rh and Ag, is known.
In these gas detectors, the sensitivity to CO gas is 150 ° C. or lower, and is high at low temperatures up to room temperature, and the sensitivity to interfering gases such as hydrogen gas (H 2 ) and ethanol is low at 100 ° C. or lower. Therefore, in order to obtain the selectivity of the CO gas, the CO gas is used with the detection temperature of the CO gas at about room temperature. However, when the element temperature is 100 ° C.
At low temperatures, the adsorbed CO gas is difficult to desorb, so the element temperature must be raised once to desorb,
Purging for that was necessary (Japanese Patent Publication No. 53-433).
No. 20, JP-B-58-30535). On the other hand, tin oxide is used as a sensor for detecting CO gas at a higher temperature (250 ° C. or higher), which can operate at higher temperatures.
It is known that a precious metal such as t, Au, Pd or the like is added in a smaller amount (0.045% by weight or less) than the above-mentioned sensor (Japanese Patent Publication No. 6-17884). In this gas detection device, the peak of the CO gas sensitivity rises to about 250 ° C., and the CO gas is detected in a temperature range slightly lower than this temperature (this is a carbon monoxide gas detection temperature). In such a gas detection device, in a relatively high temperature of CO gas detection temperature,
With a fast response speed, hydrogen gas, methane (C
H 4 ) Furthermore, CO gas can be detected with a selectivity for hydrocarbons such as isobutane (iC 4 H 10 ).
【０００３】また、このようなガス検知装置を利用し
て、ガス感応部の温度を、ＣＯガスを検知するためのＣ
Ｏ検知温度（常温）と、その検知温度よりも高いパージ
処理用のパージ温度とに交互に切り換えて設定する運転
を行い、ＣＯ検知温度においてＣＯガスを検知し、パー
ジ温度において、ＣＯを脱着するパージ処理を行うと共
に、メタン（ＣＨ4 ）の検知を行うことがある。[0003] Further, using such a gas detection device, the temperature of the gas sensing portion is measured by a C value for detecting CO gas.
An operation of alternately switching and setting the O detection temperature (normal temperature) and the purge temperature for the purge process higher than the detected temperature is performed, the CO gas is detected at the CO detection temperature, and the CO is desorbed at the purge temperature. In some cases, methane (CH 4 ) is detected while purging is performed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うなガス検知装置の運転方法においては、メタン（ＣＨ
4 ）に選択性を有するガス感応部の温度が、ＣＯを脱着
することができるパージ温度とすることができるので、
２種類の被検知ガスを検知可能であるが、これら以外の
被検知ガスで、パージ温度よりも低くＣＯガス検知温度
よりも高い中間検知温度で選択性を有する水素ガスやプ
ロパンガス（Ｃ3 Ｈ8 ）等を検知しようとする場合、ガ
ス感応部の温度がパージ温度からＣＯ検知温度まで変化
していくなかで、上記の中間検知温度になったときに検
知することが考えられるが、検知時間を充分にとること
ができないので、好ましい精度で検知することは不可能
であった。また、このような中間検知温度で選択性を有
する被検知ガスとＣＯガスとを検知する場合、中間検知
温度においてＣＯガスを充分に脱着することができない
ので、被検知ガスを好ましい状態で検知することができ
ない。また、このように複数の被検知ガスを検知する場
合、ガス感応部の温度を夫々の検知ガスを検知するため
の検知温度に順次切り換えるのであるが、夫々の検知周
期が大きくなってしまう。従って、本発明は、上記の事
情に鑑みて、複数の被検知ガスを好ましい状態で検知す
ることができるガス検知装置を実現することを目的とす
る。However, this is not the case.
In the operation method of such a gas detection device, methane (CH
Four) The temperature of the gas sensitive part, which has selectivity, desorbs CO
So that the purge temperature can be
Two types of gas to be detected can be detected.
CO gas detection temperature lower than the purge temperature for the detected gas
Selective hydrogen gas and pump at higher intermediate sensing temperatures
Lopangas (CThreeH8) Etc.
The temperature of the sensing part changes from the purge temperature to the CO detection temperature
As the temperature reaches the above-mentioned intermediate detection temperature,
It is conceivable to know, but take enough time for detection
Can not be detected with favorable accuracy
Met. Also, there is selectivity at such an intermediate detection temperature.
Intermediate detection when detecting the detected gas and CO gas
Insufficient desorption of CO gas at temperature
Therefore, the gas to be detected can be detected in a favorable state.
Absent. Also, when detecting a plurality of detected gases in this way,
The temperature of the gas sensing part to detect each detection gas.
Are sequentially switched to the detection temperature of
The period gets bigger. Therefore, the present invention
In consideration of circumstances, it is possible to detect a plurality of detected gases in a preferable state.
To achieve a gas detection device that can
You.
【０００５】[0005]
【課題を解決するための手段】〔構成１〕本発明に係る
ガス検知装置の運転方法は、請求項１に記載したごと
く、前記ガス感応部を、前記複数種の検知温度に順次切
り換えると共に、前記複数種の検知温度の切り換えに際
して、前記ガス感応部を、前記複数種の検知温度よりも
高いパージ温度に設定してパージ処理することを特徴と
する。[Means for Solving the Problems] [Configuration 1] In an operation method of a gas detection device according to the present invention, as described in claim 1, the gas sensing portion is sequentially switched to the plurality of types of detection temperatures, When the plurality of types of detected temperatures are switched, the gas sensitive section is set to a purge temperature higher than the plurality of types of detected temperatures to perform a purging process.
【０００６】〔作用効果〕本構成のごとく、複数種の被
検知ガスを検知可能なガス検知装置において、ガス感応
部を複数種の被検知ガスから選ばれる１つの被検知ガス
に対応する検知温度に設定する前に、必ず、ガス感応部
をパージ温度に設定することで、次のガス検知温度に設
定したときのガス感応部においては検知する被検知ガス
以外の妨害ガスを脱着させたフレッシュ状態とすること
ができるので、被検知ガスに対する選択性を向上させた
好ましい状態で被検知ガスを検知することができ、例え
ばパージ温度よりも低い検知温度において検知される複
数の被検知ガスを検知しても、常に、検知温度に設定す
る際のガス感応部をパージ処理後のフレッシュ状態とし
て順次複数種の被検知ガスを検知することができる。[Effects] In this configuration, in a gas detection device capable of detecting a plurality of types of gases to be detected, the gas sensitive portion is provided with a detection temperature corresponding to one detected gas selected from a plurality of types of gases to be detected. Be sure to set the gas-sensitive part to the purge temperature before setting it to the fresh state where the interfering gas other than the detected gas to be detected is desorbed in the gas-sensitive part when the next gas detection temperature is set. Therefore, it is possible to detect the gas to be detected in a preferable state with improved selectivity to the gas to be detected, for example, to detect a plurality of detected gases detected at a detection temperature lower than the purge temperature However, it is possible to always detect a plurality of types of detected gases sequentially by setting the gas sensitive part when setting the detection temperature to the fresh state after the purge processing.
【０００７】〔構成２〕本発明に係るガス検知装置の運
転方法は、請求項２に記載したごとく、前記複数の被検
知ガスの夫々の必要検知頻度に基づいて決定された検知
パターンに従って、前記ガス感応部を、前記複数種の検
知温度に順次切り換えることを特徴とする。[0007] According to a second aspect of the present invention, there is provided a method for operating a gas detector according to the present invention, wherein the plurality of detected gases are detected in accordance with a detection pattern determined based on a required detection frequency of each of the plurality of detected gases. The gas sensing section is sequentially switched to the plurality of types of detected temperatures.
【０００８】〔作用効果〕本構成のごとく、複数種の被
検知ガスを検知可能なガス検知装置において、ガス感応
部の温度を、複数の被検知ガスの夫々の必要頻度に基づ
いて決定された検知パターンに従って切り換えて、夫々
の被検知ガスを検知することで、たとえば、ガス漏れ検
知目的で検知されるメタンガスやプロパンガス等の必要
検知頻度が高い被検知ガスの検知においては、検知周期
を短くして高い頻度で検知するようにして、中毒防止目
的で検知されるＣＯガスや、空気汚れモニタ目的で検知
される水素ガス等の必要検知頻度の低いガスの検知にお
いては、上記の必要検知頻度が高い被検知ガスよりも検
知周期を長くして低い頻度で検知することができ、検知
目的に応じて複数の被検知ガスを検知することができ
る。[Effects] In this configuration, in a gas detection device capable of detecting a plurality of types of detected gases, the temperature of the gas sensing section is determined based on the required frequency of each of the plurality of detected gases. By switching according to the detection pattern and detecting each of the detected gases, for example, in the detection of a frequently detected gas such as methane gas or propane gas that is detected for the purpose of detecting a gas leak, the detection cycle is shortened. In order to detect CO gas that is detected for the purpose of preventing poisoning and hydrogen gas that is detected for the purpose of monitoring air contamination, the frequency of the detection that is required is low. The detection period can be made longer than that of the gas to be detected, which is higher than that of the gas to be detected.
【０００９】〔構成３〕本発明に係るガス検知装置の運
転方法は、請求項３に記載したごとく、上記構成１又は
２のガス検知装置の運転方法の構成に加えて、前記複数
種の被検知ガスが、少なくとも３種の被検知ガスである
ことを特徴とする。[Structure 3] According to a third aspect of the present invention, there is provided a method for operating a gas detector according to the present invention, in addition to the structure of the method for operating a gas detector according to the first or second aspect. The detection gas is at least three types of detected gases.
【００１０】〔作用効果〕また、このようなガス検知装
置の運転方法は、本構成のごとく、３種以上の被検知ガ
スを検知する場合に、例えば、ガス漏れをモニタしなが
ら、空気の汚れや不完全燃焼を複合的にモニタしたり、
空気の汚れを、たばこによるものと建材等の他の要因に
よるものとに区別しながら、精密に分析しつつモニタす
ることが可能となる。[Effects] In the operation method of such a gas detection device, when three or more types of gas to be detected are detected as in the present configuration, for example, while the gas leakage is monitored, the contamination of air is monitored. Or incomplete combustion,
It becomes possible to monitor while analyzing accurately while discriminating air contamination from tobacco and other factors such as building materials.
【００１１】〔構成４〕本発明に係るガス検知装置は、
請求項４に記載したごとく、金属酸化物半導体を主成分
とするガス感応部と、前記ガス感応部の温度を設定可能
な温度設定手段とを備え、温度設定手段を働かせ、前記
ガス感応部を、複数種の検知温度に順次切り換えて、夫
々の前記検知温度で異なる被検知ガスを検知すると共
に、前記複数種の検知温度の切り換えに際して、前記ガ
ス感応部を、前記複数種の検知温度よりも高いパージ温
度に設定する制御手段を備えたことを特徴とする。[Structure 4] The gas detection device according to the present invention comprises:
As described in claim 4, a gas sensitive part mainly composed of a metal oxide semiconductor, and a temperature setting means capable of setting the temperature of the gas sensitive part, the temperature setting means is operated, the gas sensitive part Sequentially switching to a plurality of types of detected temperatures, and detecting different detected gases at each of the detected temperatures, and when switching the plurality of types of detected temperatures, the gas sensitive unit is set to a higher temperature than the plurality of types of detected temperatures. Control means for setting a high purge temperature is provided.
【００１２】〔作用効果〕本構成のごとく、ガス感応部
の温度を、複数種の被検知ガスに対応する複数の検知温
度と、その検知温度よりも高いパージ温度に設定可能な
温度設定手段を備えたガス検知装置において、制御手段
により温度設定手段を制御し、ガス感応部を複数種の被
検知ガスから選ばれる１つの被検知ガスに対応する検知
温度に設定する前に、必ず、ガス感応部をパージ温度に
設定することで、次のガス検知温度に設定したときのガ
ス感応部においては検知する被検知ガス以外の妨害ガス
が脱着した状態となるので、被検知ガスに対する選択性
を向上させた好ましい状態で被検知ガスを検知すること
ができ、例えばパージ温度よりも低い検知温度において
検知される複数の被検知ガスを検知しても、常に、検知
温度に設定する際のガス感応部を常にパージ処理後のフ
レッシュ状態として被検知ガスを検知することができ
る。また、構成４のガス検知装置は、構成１のガス検知
装置の運転方法を実施するためのガス検知装置であるの
で、構成１と同様の作用効果を発揮することができる。[Operation and Effect] As in the present configuration, a temperature setting means capable of setting the temperature of the gas sensing portion to a plurality of detected temperatures corresponding to a plurality of types of detected gases and a purge temperature higher than the detected temperatures is provided. In the gas detection device provided, the temperature setting means is controlled by the control means, and before the gas sensing part is set to the detection temperature corresponding to one detected gas selected from a plurality of detected gases, the gas sensitive part must be set. By setting the purge temperature to the purge temperature, the gas-sensitive section when the next gas detection temperature is set will be in a state in which interfering gases other than the detected gas to be detected are desorbed, improving selectivity to the detected gas The detection target gas can be detected in a preferable state.For example, even when a plurality of detection target gases detected at a detection temperature lower than the purge temperature are detected, the detection gas is always set to the detection temperature. It can be detected the gas to be detected as a fresh state after always purging the gas sensing portion. Further, since the gas detection device of Configuration 4 is a gas detection device for implementing the method of operating the gas detection device of Configuration 1, it can exhibit the same functions and effects as those of Configuration 1.
【００１３】〔構成５〕本発明に係るガス検知装置は、
請求項５に記載したごとく、金属酸化物半導体を主成分
とするガス感応部と、前記ガス感応部の温度を設定可能
な温度設定手段とを備え、前記複数の被検知ガスの夫々
の必要検知頻度に基づいて決定された検知パターンを記
憶する記憶手段と、前記記憶手段に記憶された検知パタ
ーンに従って、前記温度設定手段を働かせ、前記ガス感
応部を、前記複数種の検知温度に順次切り換えて、夫々
の前記検知温度で異なる被検知ガスを検知する制御手段
を備えたことを特徴とする。[Structure 5] The gas detecting device according to the present invention comprises:
6. The apparatus according to claim 5, further comprising: a gas-sensitive part mainly composed of a metal oxide semiconductor; and a temperature setting unit capable of setting a temperature of the gas-sensitive part, and detecting the necessity of each of the plurality of detected gases. A storage unit that stores a detection pattern determined based on a frequency, and according to the detection pattern stored in the storage unit, the temperature setting unit is operated to sequentially switch the gas sensing unit to the plurality of types of detection temperatures. And a control unit for detecting a different gas to be detected at each of the detection temperatures.
【００１４】〔作用効果〕本構成のごとく、ガス感応部
の温度を、複数種の被検知ガスに対応する複数の検知温
度に設定可能な温度設定手段を備えたガス検知装置にお
いて、制御手段により記憶手段に記憶された検知パター
ンに基づいて温度設定手段を制御し、ガス感応部の温度
を、複数の被検知ガスの夫々の必要頻度に基づいて決定
された検知パターンに従って切り換えて、夫々の被検知
ガスを検知することで、たとえば、ガス漏れ検知目的で
検知されるメタンガスやプロパンガス等の必要検知頻度
が高い被検知ガスにおいては、頻繁に検知するようにし
て、中毒防止目的で検知されるＣＯガスや、空気汚れモ
ニタ目的で検知される水素ガス等においては、上記の必
要検知頻度が高い被検知ガスよりも検知周期を長くして
検知することができ、検知目的に応じて複数の被検知ガ
スを検知することができる。また、構成５のガス検知装
置は、構成２のガス検知装置の運転方法を実施するため
のガス検知装置であるので、構成１と同様の作用効果を
発揮することができる。[Effects] As in the present configuration, in a gas detection device provided with temperature setting means capable of setting the temperature of the gas sensing portion to a plurality of detection temperatures corresponding to a plurality of types of detected gases, the control means The temperature setting unit is controlled based on the detection pattern stored in the storage unit, and the temperature of the gas sensing unit is switched in accordance with the detection pattern determined based on the required frequency of each of the plurality of detected gases, and each of the plurality of detected gases is switched. By detecting the detection gas, for example, a detection target gas such as methane gas or propane gas, which is detected for the purpose of detecting a gas leak and having a high required detection frequency, is frequently detected and detected for the purpose of preventing poisoning. In the case of CO gas or hydrogen gas that is detected for the purpose of monitoring air contamination, the detection cycle can be set longer than that of the gas to be detected, which requires higher detection frequency. , It can be detected a plurality of the gas to be detected according to the detection purposes. Further, since the gas detection device of Configuration 5 is a gas detection device for implementing the method of operating the gas detection device of Configuration 2, the same operation and effect as those of Configuration 1 can be exhibited.
【００１５】さらに、構成１と構成２とを組み合わせた
ガス検知装置の運転方法や、構成４と構成５とを組み合
わせたガス検知装置を構成することもでき、両構成の作
用効果を発揮することができる。Further, an operation method of the gas detection device combining the configurations 1 and 2 and a gas detection device combining the configurations 4 and 5 can be configured, and the effects of both configurations can be exhibited. Can be.
【００１６】[0016]
【発明の実施の形態】本発明に係るガス検知装置及びそ
の運転方法の実施の形態について、図面に基づいて説明
する。ガス検知装置１は、半導体型ガスセンサ２（具体
的には熱線型）を備え、本発明に係るガス検知装置の運
転方法を実施して、中毒防止目的のＣＯガス検知、建材
等から排出されるホルムアルデヒド（ＨＣＨＯ）検知、
及びたばこの煙等の検知目的の水素ガス検知を夫々行
う。図１に熱線型半導体式ガスセンサの構成を、図２に
本願のガス検知装置の検知回路のブロック構成を、さら
に、図３に本願のガス検知装置の運転方法を実施した場
合のガス感応部の経時的温度変化状態を示した。図１に
示すように、本願のガス検知装置１に採用される所謂、
熱線型半導体式ガスセンサ２は、主として酸化インジウ
ム半導体よりなるガス感応部３と、このガス感応部３内
に備えられる白金等の貴金属線（合金線であってもよ
い）であるコイル抵抗体４を備えて構成されており、ガ
ス吸着による酸化物半導体の抵抗値変化を、コイル両端
においてコイル抵抗体４と酸化物半導体との合成抵抗の
変化として検知する。センサの概略構造は以上のとおり
であるが、前述のガス感応部３を構成する酸化インジウ
ム半導体には、Ｐｄが０．５ｍｏｌ％添加されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a gas detection device and an operation method thereof according to the present invention will be described with reference to the drawings. The gas detection device 1 includes a semiconductor type gas sensor 2 (specifically, a hot wire type), implements the operation method of the gas detection device according to the present invention, detects CO gas for the purpose of preventing poisoning, and discharges gas from building materials. Formaldehyde (HCHO) detection,
And hydrogen gas for the purpose of detecting tobacco smoke and the like, respectively. FIG. 1 shows a configuration of a hot wire semiconductor gas sensor, FIG. 2 shows a block configuration of a detection circuit of the gas detection device of the present application, and FIG. 3 shows a gas sensing portion when the method of operating the gas detection device of the present application is performed. The temperature change state with time was shown. As shown in FIG. 1, a so-called gas detection device 1 of the present application employs a so-called gas detection device.
The hot wire type semiconductor gas sensor 2 includes a gas sensing part 3 mainly made of an indium oxide semiconductor and a coil resistor 4 which is a noble metal wire such as platinum (may be an alloy wire) provided in the gas sensing part 3. A change in the resistance value of the oxide semiconductor due to gas adsorption is detected as a change in the combined resistance of the coil resistor 4 and the oxide semiconductor at both ends of the coil. The schematic structure of the sensor is as described above, but Pd is added to the indium oxide semiconductor constituting the gas sensitive portion 3 in an amount of 0.5 mol%.
【００１７】図２に示すように、ガス検知装置１の検知
回路構成にあたっては、例えばホイートストーンブリッ
ジ５内の一抵抗として、この熱線型半導体式ガスセンサ
２を組み込んで、その合成抵抗値の変化を検知してガス
の検知をおこなう。ガス検知装置１の検知系１０は、マ
イコン回路部１１（この部位にはセンサ電源制御部１１
ａとセンサ検知結果出力部１１ｂとメモリ１１ｃ（記憶
手段）が備えられている）、ガス感応部温度設定用電源
回路部１２及び検知回路部１３とを備えている。センサ
電源制御部１１ａとガス感応部温度設定用電源回路部１
２は、熱線型半導体ガスセンサ２に印加される電圧（以
下、印加電圧と呼ぶ。）を切替え、制御手段として機能
し、ガス感応部３の温度（具体的にはセンサ温度）が、
前述の複数種の検知温度に切換設定される。この系に備
えられる抵抗Ｒ１、Ｒ２、Ｒ３は、検知ガスに対して適
切に選択される。即ち、ガス検知装置１は、熱線型半導
体ガスセンサ２に対して、コイル抵抗体４に掛かる電圧
（電流）を制御することにより、ガス感応部３の温度
を、複数の被検知ガスを検知するための複数の検知温度
と、この検知温度に対して高く、且つ、高温パージを行
えるパージ温度とに設定する手段（温度設定手段）を備
えている。As shown in FIG. 2, in the detection circuit configuration of the gas detection device 1, for example, the hot-wire semiconductor gas sensor 2 is incorporated as one resistor in the Wheatstone bridge 5 to change the combined resistance value. To detect gas. The detection system 10 of the gas detection device 1 includes a microcomputer circuit unit 11 (a sensor power control unit 11
a, a sensor detection result output section 11b, and a memory 11c (storage means)), a gas sensitive section temperature setting power supply circuit section 12, and a detection circuit section 13. Sensor power control section 11a and gas sensitive section temperature setting power supply circuit section 1
2 switches the voltage applied to the hot-wire type semiconductor gas sensor 2 (hereinafter, referred to as an applied voltage) and functions as a control unit, and the temperature of the gas sensing unit 3 (specifically, the sensor temperature) is
The detection temperature is switched to a plurality of types. The resistances R1, R2, R3 provided in this system are appropriately selected for the detection gas. That is, the gas detecting device 1 controls the voltage (current) applied to the coil resistor 4 with respect to the hot wire type semiconductor gas sensor 2 to detect the temperature of the gas sensing unit 3 and a plurality of detected gases. Means (temperature setting means) for setting a plurality of detected temperatures and a purge temperature higher than the detected temperatures and capable of performing a high-temperature purge.
【００１８】図３に、上記の印加電圧及びガス感応部３
の温度の温度切替え状況を示した。ガス感応部３の温度
は、夫々の被検知ガスを検知するための検知温度に切り
換えられて、ＣＯガスの検知温度としての常温（印加電
圧０Ｖ）とされるＣＯ検知工程、ホルムアルデヒドの検
知温度としての１４０℃（印加電圧０．８Ｖ）とされる
ホルムアルデヒド検知工程、水素ガスの検知温度として
の２５０℃（印加電圧１．２Ｖ）とされる水素ガス検知
工程とに切り換えられ、夫々の検知工程における検知時
間は８ｓｅｃとされている。さらに、この夫々の検知工
程の前には、ガス感応部３はパージ処理されるパージ工
程が実行される。ここで、パージ温度は５００℃（印加
電圧２．５Ｖ）であり、パージ時間は２ｓｅｃである。
つまり、夫々の検知工程の間には、常にパージ工程が実
行されることになる。FIG. 3 shows the above applied voltage and gas sensing part 3.
The temperature switching status of the temperature of FIG. The temperature of the gas sensing section 3 is switched to the detection temperature for detecting each gas to be detected, and the CO detection step is performed at a normal temperature (applied voltage 0 V) as the detection temperature of the CO gas. Is switched to a formaldehyde detection step at 140 ° C. (applied voltage of 0.8 V) and a hydrogen gas detection step at 250 ° C. (applied voltage of 1.2 V) as a hydrogen gas detection temperature. The detection time is set to 8 seconds. Further, before each of the detection steps, a purge step is performed in which the gas sensitive section 3 is subjected to a purge process. Here, the purge temperature is 500 ° C. (applied voltage: 2.5 V), and the purge time is 2 seconds.
That is, a purge step is always performed between each detection step.
【００１９】また、このようなＣＯガス検知工程、水素
ガス検知工程、及びホルムアルデヒド検知工程とは、マ
イコン回路部１１に設けられたメモリ１１ｃに予め記憶
されている検知パターンに基づいて切り換えられ、この
ような検知パターンは、被検知ガスの必要検知頻度に基
づいて決定され、具体的には、中毒防止目的のＣＯガス
検知工程を頻繁に行うように、ＣＯ検知工程を２０秒周
期で行い、水素ガス検知工程とホルムアルデヒド検知工
程とを４０秒周期で行うように決定されており、ＣＯ検
知工程を他の工程よりも２倍の頻度で行うことになる。The CO gas detection step, the hydrogen gas detection step, and the formaldehyde detection step are switched based on a detection pattern stored in a memory 11c provided in the microcomputer circuit section 11 in advance. Such a detection pattern is determined based on the required detection frequency of the gas to be detected. Specifically, the CO detection process is performed every 20 seconds so as to frequently perform the CO gas detection process for the purpose of preventing poisoning, It is determined that the gas detection step and the formaldehyde detection step are performed at a cycle of 40 seconds, and the CO detection step is performed twice as frequently as the other steps.
【００２０】夫々の検知ガスを検知する場合のガス濃度
とガス感度との関係を説明する。前述の２ｓｅｃのパー
ジ工程を行った後に、ガス感応部３の温度を常温に８ｓ
ｅｃ維持するＣＯガス検知工程を実行したときのガス感
度とガス濃度の関係を図４に示す。図示されるようにＣ
Ｏガスに対して高感度、高選択性の非常に良好なセンサ
が得られており、他の妨害ガスの影響を殆ど受けていな
い。The relationship between the gas concentration and the gas sensitivity when each detection gas is detected will be described. After performing the above-described purge process for 2 seconds, the temperature of the gas sensing unit 3 is reduced to room temperature for 8 seconds.
FIG. 4 shows the relationship between gas sensitivity and gas concentration when the CO gas detection step of maintaining ec is executed. C as shown
A very good sensor with high sensitivity and high selectivity for O gas is obtained, and is hardly affected by other interfering gases.
【００２１】次に、前述の２ｓｅｃのパージ工程を行っ
た後に、ガス感応部３の温度を１４０℃に８ｓｅｃ維持
するホルムアルデヒド検知工程を実行したときのガス感
度とガス濃度の関係を図５に示す。図示されるようにホ
ルムアルデヒドに対して高感度、高選択性の非常に良好
なセンサが得られており、他の妨害ガスの影響を殆ど受
けていない。Next, FIG. 5 shows the relationship between the gas sensitivity and the gas concentration when the formaldehyde detection step of maintaining the temperature of the gas sensing part 3 at 140 ° C. for 8 seconds after the purging step of 2 seconds is performed. . As shown in the figure, a very good sensor having high sensitivity and high selectivity to formaldehyde was obtained, and was hardly affected by other interfering gases.
【００２２】次に、前述の２ｓｅｃのパージ工程を行っ
た後に、ガス感応部３の温度を１４０℃に８ｓｅｃ維持
する水素ガス検知工程を実行したときのガス感度とガス
濃度の関係を図５に示す。図示されるように水素ガスに
対して高感度、高選択性の非常に良好なセンサが得られ
ており、他の妨害ガスの影響を殆ど受けていない。Next, FIG. 5 shows the relationship between the gas sensitivity and the gas concentration when the hydrogen gas detecting step of maintaining the temperature of the gas sensing part 3 at 140 ° C. for 8 seconds after the purging step of 2 seconds is performed. Show. As shown in the figure, a very good sensor having high sensitivity and high selectivity to hydrogen gas is obtained, and is hardly affected by other interfering gases.
【００２３】〔別実施の形態〕次に、本発明のガス検知
装置及びその運転方法の別の実施の形態を図面に基づい
て説明する。 〈１〉 上記の実施の形態において、被検知ガスとし
て、ＣＯガス、ホルムアルデヒド、及び水素ガスを検知
する構成を説明したが、別にこれらの被検知ガスは本発
明を限定するものではなく、検知温度が互いに異なる複
数の被検知ガスを検知する場合において、本発明のガス
検知装置及びその運転方法を実施することができる。た
とえば、中毒防止目的のＣＯガス検知、たばこの煙等の
検知目的の水素ガス検知、ガス漏れ検知目的のプロパン
ガス検知を行う場合、ガス感応部３の温度は、夫々の被
検知ガスを検知するための検知温度に切り換えられて、
ＣＯガスの検知温度としての常温（印加電圧０Ｖ）とさ
れるＣＯ検知工程、水素ガスの検知温度としての２５０
℃（印加電圧１．２Ｖ）とされる水素ガス検知工程、プ
ロパンガスの検知温度としての３３０℃（印加電圧１．
８Ｖ）とされるプロパンガス検知工程とに切り換えら
れ、夫々の検知工程における検知時間は８ｓｅｃとされ
る。ここで、この夫々の検知工程の前には、ガス感応部
３はパージ処理されるパージ工程が実行され、夫々の検
知工程は、マイコン回路部１１に設けられたメモリ１１
ｃに予め記憶され、被検知ガスの必要検知頻度に基づい
て決定された検知パターンに基づいて切り換えられ、例
えば、その検知パターンは、ガス漏れ検知目的のプロパ
ンガス検知工程を頻繁に行うように、プロパンガス検知
工程を２０秒周期で行い、ＣＯガス検知工程と水素ガス
検知工程とを４０秒周期で行うように決定され、プロパ
ンガス検知工程を他の工程よりも２倍の頻度で行うこと
ができる。[Another Embodiment] Next, another embodiment of the gas detection device and the operation method thereof according to the present invention will be described with reference to the drawings. <1> In the above embodiment, the configuration in which CO gas, formaldehyde, and hydrogen gas are detected as the gas to be detected has been described. However, these gas to be detected do not limit the present invention. When detecting a plurality of detected gases different from each other, the gas detection device of the present invention and the operation method thereof can be implemented. For example, when performing CO gas detection for the purpose of poisoning prevention, hydrogen gas detection for the purpose of detecting tobacco smoke, etc., and propane gas detection for the purpose of gas leak detection, the temperature of the gas sensing unit 3 detects each gas to be detected. Is switched to the detected temperature for
The CO detection step is performed at a normal temperature (applied voltage 0 V) as the detection temperature of CO gas, and 250 is detected as the detection temperature of hydrogen gas.
C. (applied voltage 1.2 V) in the hydrogen gas detecting step, and 330 ° C. (applied voltage 1.
8V), and the detection time in each detection step is set to 8 seconds. Here, before each of the detection steps, a purge step of purging the gas sensing unit 3 is performed, and each of the detection steps is performed by a memory 11 provided in the microcomputer circuit unit 11.
c is stored in advance and switched based on the detection pattern determined based on the required detection frequency of the gas to be detected, for example, the detection pattern is to frequently perform a propane gas detection process for the purpose of gas leak detection, It is determined that the propane gas detection step is performed at a cycle of 20 seconds, and the CO gas detection step and the hydrogen gas detection step are performed at a cycle of 40 seconds, and the propane gas detection step is performed twice as frequently as other steps. it can.
【００２４】〈２〉 上記の実施例において、ガス検知
装置に採用すべきガセンサ２として熱線型半導体式のガ
スセンサを採用したが、これは、基板型等任意の構成が
採用できる。<2> In the above embodiment, a hot-wire semiconductor gas sensor is used as the gas sensor 2 to be used in the gas detection device. However, an arbitrary configuration such as a substrate type gas sensor can be used.
【図１】熱線型半導体式ガスセンサの構成を示す概略図FIG. 1 is a schematic diagram showing a configuration of a hot-wire semiconductor gas sensor.
【図２】本願のガス検知装置の検知回路のブロック構成
図FIG. 2 is a block diagram of a detection circuit of the gas detection device of the present application.
【図３】本願のガス検知装置の運転方法を実施した場合
のガス感応部の経時的温度変化状態を示す図FIG. 3 is a diagram showing a time-dependent temperature change state of a gas sensing unit when the operation method of the gas detection device of the present application is performed.
【図４】ＣＯ検知工程におけるガス感度とガス濃度の関
係を示すグラフ図FIG. 4 is a graph showing the relationship between gas sensitivity and gas concentration in a CO detection process.
【図５】ホルムアルデヒド検知工程におけるガス感度と
ガス濃度の関係を示すグラフ図FIG. 5 is a graph showing the relationship between gas sensitivity and gas concentration in a formaldehyde detection step.
【図６】水素ガス検知工程におけるガス感度とガス濃度
の関係を示すグラフ図FIG. 6 is a graph showing a relationship between gas sensitivity and gas concentration in a hydrogen gas detection step.
１ ガス検知装置 ２ ガスセンサ ３ ガス感応部 ４ コイル抵抗体 ５ ホイートストーンブリッジ １１ マイコン回路部 １１ａ センサ電源制御部 １１ｂ センサ検知結果出力部 １１ｃ メモリ（記憶手段） １２ ガス感応部温度設定用電源回路部 DESCRIPTION OF SYMBOLS 1 Gas detection apparatus 2 Gas sensor 3 Gas sensing part 4 Coil resistor 5 Wheatstone bridge 11 Microcomputer circuit part 11a Sensor power control part 11b Sensor detection result output part 11c Memory (storage means) 12 Gas sensing part temperature setting power supply circuit part
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2G046 AA11 AA25 BA02 BA09 BB02 BC03 BJ02 DB05 DC02 EA03 EA04 EA08 EB05 FB02 FE15 FE29 FE31 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G046 AA11 AA25 BA02 BA09 BB02 BC03 BJ02 DB05 DC02 EA03 EA04 EA08 EB05 FB02 FE15 FE29 FE31
Claims (5)
応部を備え、前記ガス感応部を複数種の検知温度に設定
切換した場合に、夫々の前記検知温度で異なる被検知ガ
スを検知可能なガス検知装置の運転方法であって、 前記ガス感応部を、前記複数種の検知温度に順次切り換
えると共に、前記複数種の検知温度の切り換えに際し
て、前記ガス感応部を、前記複数種の検知温度よりも高
いパージ温度に設定してパージ処理するガス検知装置の
運転方法。1. A gas sensitive part mainly composed of a metal oxide semiconductor is provided, and when a setting of the gas sensitive part is switched to a plurality of kinds of detection temperatures, different detected gases can be detected at the respective detection temperatures. An operation method of the gas detection device, wherein the gas sensitive section is sequentially switched to the plurality of types of detected temperatures, and when the plurality of types of detected temperatures are switched, the gas sensitive section is changed to the plurality of types of detected temperatures. An operation method of a gas detection device that performs a purge process by setting a higher purge temperature.
応部を備え、前記ガス感応部を複数種の検知温度に設定
切換した場合に、夫々の前記検知温度で異なる被検知ガ
スを検知可能なガス検知装置の運転方法であって、 前記複数の被検知ガスの夫々の必要検知頻度に基づいて
決定された検知パターンに従って、前記ガス感応部を、
前記複数種の検知温度に順次切り換えるガス検知装置の
運転方法。2. A gas sensing part comprising a metal oxide semiconductor as a main component is provided, and when the gas sensing part is switched to a plurality of kinds of detection temperatures, different detected gases can be detected at each of the detection temperatures. Operating method of the gas detection device, according to the detection pattern determined based on the required detection frequency of each of the plurality of detected gas, the gas sensitive unit,
An operation method of the gas detection device for sequentially switching to the plurality of types of detection temperatures.
３種の被検知ガスである請求項１又は２に記載のガス検
知装置の運転方法。3. The method according to claim 1, wherein the plurality of types of detected gases are at least three types of detected gases.
応部と、前記ガス感応部の温度を設定可能な温度設定手
段とを備え、 温度設定手段を働かせ、前記ガス感応部を、複数種の検
知温度に順次切り換えて、夫々の前記検知温度で異なる
被検知ガスを検知すると共に、前記複数種の検知温度の
切り換えに際して、前記ガス感応部を、前記複数種の検
知温度よりも高いパージ温度に設定する制御手段を備え
たガス検知装置。4. A gas sensitive part mainly composed of a metal oxide semiconductor, and temperature setting means capable of setting a temperature of the gas sensitive part, wherein a plurality of kinds of gas sensitive parts are operated by operating the temperature setting means. Are sequentially switched to the detected temperatures, and different detected gases are detected at the respective detected temperatures. When the plurality of detected temperatures are switched, the gas sensing unit is set to a purge temperature higher than the plurality of detected temperatures. A gas detection device provided with a control means for setting the pressure in a gas detector.
応部と、前記ガス感応部の温度を設定可能な温度設定手
段とを備え、 前記複数の被検知ガスの夫々の必要検知頻度に基づいて
決定された検知パターンを記憶する記憶手段と、前記記
憶手段に記憶された検知パターンに従って、前記温度設
定手段を働かせ、前記ガス感応部を、前記複数種の検知
温度に順次切り換えて、夫々の前記検知温度で異なる被
検知ガスを検知する制御手段を備えたガス検知装置。5. A gas sensitive part mainly composed of a metal oxide semiconductor, and a temperature setting means capable of setting a temperature of the gas sensitive part, based on a required detection frequency of each of the plurality of detected gases. Storage means for storing the determined detection pattern, and the temperature setting means is operated in accordance with the detection pattern stored in the storage means, and the gas sensing section is sequentially switched to the plurality of types of detection temperatures, and A gas detection device comprising a control means for detecting a different gas to be detected at the detection temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000247264A JP4497676B2 (en) | 2000-08-17 | 2000-08-17 | Gas detection device and operation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002303598A (en) * | 2001-04-05 | 2002-10-18 | Denso Corp | Gas detection method using gas sensor |
| JP2007024508A (en) * | 2005-07-12 | 2007-02-01 | Fuji Electric Fa Components & Systems Co Ltd | Membrane gas sensor |
| JP2011002358A (en) * | 2009-06-19 | 2011-01-06 | Fuji Electric Systems Co Ltd | Intermittent driving method of semiconductor gas sensor |
| JP2011027752A (en) * | 2010-11-08 | 2011-02-10 | Fuji Electric Systems Co Ltd | Thin film gas sensor |
| JPWO2012165182A1 (en) * | 2011-05-27 | 2015-02-23 | 株式会社Ｎｔｔドコモ | Biogas detection device and biogas detection method |
| WO2018151443A1 (en) * | 2017-02-16 | 2018-08-23 | 삼성전자 주식회사 | Electronic device for measuring gas and method therefor |
| JP2020165755A (en) * | 2019-03-29 | 2020-10-08 | 大阪瓦斯株式会社 | Temperature control method and temperature control device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567056U (en) * | 1979-06-28 | 1981-01-22 | ||
| JPS5896244A (en) * | 1981-12-03 | 1983-06-08 | Matsushita Electric Works Ltd | Combustible gas detector |
| JPH06148116A (en) * | 1992-11-05 | 1994-05-27 | Ricoh Co Ltd | Semi-conductor gas detecting device |
| JPH06288952A (en) * | 1993-04-01 | 1994-10-18 | Mitsubishi Materials Corp | Gas sensor |
| JPH07311170A (en) * | 1994-05-16 | 1995-11-28 | Figaro Eng Inc | Method and apparatus for detecting gas |
| JPH1166464A (en) * | 1997-08-26 | 1999-03-09 | New Cosmos Electric Corp | Gas leak alarm |
-
2000
- 2000-08-17 JP JP2000247264A patent/JP4497676B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567056U (en) * | 1979-06-28 | 1981-01-22 | ||
| JPS5896244A (en) * | 1981-12-03 | 1983-06-08 | Matsushita Electric Works Ltd | Combustible gas detector |
| JPH06148116A (en) * | 1992-11-05 | 1994-05-27 | Ricoh Co Ltd | Semi-conductor gas detecting device |
| JPH06288952A (en) * | 1993-04-01 | 1994-10-18 | Mitsubishi Materials Corp | Gas sensor |
| JPH07311170A (en) * | 1994-05-16 | 1995-11-28 | Figaro Eng Inc | Method and apparatus for detecting gas |
| JPH1166464A (en) * | 1997-08-26 | 1999-03-09 | New Cosmos Electric Corp | Gas leak alarm |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002303598A (en) * | 2001-04-05 | 2002-10-18 | Denso Corp | Gas detection method using gas sensor |
| JP4507438B2 (en) * | 2001-04-05 | 2010-07-21 | 株式会社デンソー | Gas detection method using a gas sensor |
| JP2007024508A (en) * | 2005-07-12 | 2007-02-01 | Fuji Electric Fa Components & Systems Co Ltd | Membrane gas sensor |
| JP4640960B2 (en) * | 2005-07-12 | 2011-03-02 | 富士電機システムズ株式会社 | Thin film gas sensor |
| JP2011002358A (en) * | 2009-06-19 | 2011-01-06 | Fuji Electric Systems Co Ltd | Intermittent driving method of semiconductor gas sensor |
| JP2011027752A (en) * | 2010-11-08 | 2011-02-10 | Fuji Electric Systems Co Ltd | Thin film gas sensor |
| JPWO2012165182A1 (en) * | 2011-05-27 | 2015-02-23 | 株式会社Ｎｔｔドコモ | Biogas detection device and biogas detection method |
| US9410912B2 (en) | 2011-05-27 | 2016-08-09 | Ntt Docomo, Inc. | Biological gas detection apparatus and biological gas detection method |
| WO2018151443A1 (en) * | 2017-02-16 | 2018-08-23 | 삼성전자 주식회사 | Electronic device for measuring gas and method therefor |
| JP2020165755A (en) * | 2019-03-29 | 2020-10-08 | 大阪瓦斯株式会社 | Temperature control method and temperature control device |
| JP7203662B2 (en) | 2019-03-29 | 2023-01-13 | 大阪瓦斯株式会社 | Temperature control method and temperature control device |
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