JP2002062270A - Method of displaying face analysis data in surface analyzer using electron beam - Google Patents

Method of displaying face analysis data in surface analyzer using electron beam

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Publication number
JP2002062270A
JP2002062270A JP2000249147A JP2000249147A JP2002062270A JP 2002062270 A JP2002062270 A JP 2002062270A JP 2000249147 A JP2000249147 A JP 2000249147A JP 2000249147 A JP2000249147 A JP 2000249147A JP 2002062270 A JP2002062270 A JP 2002062270A
Authority
JP
Japan
Prior art keywords
ray
electron beam
distribution map
element distribution
characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000249147A
Other languages
Japanese (ja)
Other versions
JP3950619B2 (en
Inventor
Toyohiko Okumura
豊彦 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
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Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP2000249147A priority Critical patent/JP3950619B2/en
Publication of JP2002062270A publication Critical patent/JP2002062270A/en
Application granted granted Critical
Publication of JP3950619B2 publication Critical patent/JP3950619B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To easily compare an element distribution map with a spatial extent of an X-ray generating area, and accurately grasp resolution for the element distribution map. SOLUTION: In this face analysis data displaying method in a surface analyzer using an electron beam having means 9, 10 for making spectral diffraction and detecting a characteristic X-ray generated in a surface of a sample 6 irradiated with the electron beam, and a display 17 for displaying, as the element distribution map, a characteristic X-ray counted value provided two- dimensionally by scanning the electron beam on a sample stage 7 two- dimensionally, the spatial extent of the plane-directional generating area of the characteristic X-ray found preliminarily theoretically or by observation is displayed on the element distribution map in the display to be superposed at the same time with a conformed scale. Both of them are accurately compared intuitively, thereby determines the resolution on the element distribution map accurately.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、電子線を用いた
表面分析装置により得られる試料表面の元素分布マップ
の正確な空間分解能を把握できるようにした面分析デー
タ表示方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface analysis data display method capable of grasping an accurate spatial resolution of an element distribution map on a sample surface obtained by a surface analyzer using an electron beam.

【0002】[0002]

【従来の技術】従来、細く絞った電子線を試料表面に照
射し、試料表面の元素分析を行う電子プローブマイクロ
アナライザ(EPMA)や、分析機能を有する走査形電
子顕微鏡(分析SEM)などの電子線を用いた表面分析
装置においては、電子線又は試料載置台をデジタル的に
走査し、試料表面より発生する特性X線を波長分散形X
線分光器(WDS)やエネルギー分散形X線分光器(E
DS)により分光・検出し、デジタル的走査による各画
素毎に得られるX線計数値を記憶装置に格納し、各画素
のX線計数値を任意の幅のレベル分けし、任意の色、又
はモノクロの濃淡等を指定して二次元的に表示すること
により、試料表面の元素分布マップを得ている。
2. Description of the Related Art Conventionally, an electron probe microanalyzer (EPMA) for irradiating a sample surface with a finely focused electron beam and performing elemental analysis on the sample surface, and a scanning electron microscope (analysis SEM) having an analysis function, have been used. In a surface analyzer using an X-ray, an electron beam or a sample mounting table is digitally scanned, and characteristic X-rays generated from the sample surface are converted into a wavelength-dispersive X-ray.
X-ray spectrometer (EDS)
DS), the X-ray count value obtained for each pixel by digital scanning is stored in a storage device, and the X-ray count value of each pixel is classified into levels of an arbitrary width to obtain an arbitrary color or An element distribution map on the sample surface is obtained by designating monochrome shading or the like and displaying it two-dimensionally.

【0003】そして、その際、X線発生領域の空間的拡
がり(X線拡散領域)をモンテカルロシミュレーション
などを用いて別に求めておき、上記のようにして得られ
た元素分布マップ上の空間分解能、つまり元素分布マッ
プの境界領域のぼけが、電子線の拡がりに基づくX線発
生領域の拡がり(X線拡散領域)によるものなのか、あ
るいは元素分布の勾配によるものなのかを推定してい
る。
[0003] At this time, the spatial spread (X-ray diffusion region) of the X-ray generation region is separately obtained using Monte Carlo simulation or the like, and the spatial resolution on the element distribution map obtained as described above is obtained. That is, it is estimated whether the blur of the boundary region of the element distribution map is caused by the expansion of the X-ray generation region based on the expansion of the electron beam (X-ray diffusion region) or the gradient of the element distribution.

【0004】[0004]

【発明が解決しようとする課題】上記のように、電子線
が試料物質に入射すると、電子と物質を構成する原子が
衝突・散乱を繰り返し、その過程で発生する特性X線の
発生領域も空間的な拡がりをもつことになる。この特性
X線の発生領域の空間的拡がりは、照射する電子線のエ
ネルギーと試料の組成に大きく依存している。
As described above, when an electron beam is incident on a sample material, the electrons and the atoms constituting the material repeatedly collide and scatter, and the characteristic X-ray generation region generated in the process is also a space. It has a natural spread. The spatial expansion of the characteristic X-ray generation region largely depends on the energy of the electron beam to be irradiated and the composition of the sample.

【0005】この特性X線の発生領域の空間的拡がりを
理論的に推定する手法は、上記のように従来知られてい
るが、その値は表面分析装置において実際に試料の測定
結果として表示手段に表示される元素分布マップとは直
接的に関係がないため、表示スケールが特定されている
表示手段上の元素分布マップとは対応せず、特性X線の
発生領域の空間的拡がりの理論値と元素分布マップとを
比較することは容易ではなく、したがって、元素分布マ
ップにおける正確な分解能を推定することは極めて困難
である。
A method for theoretically estimating the spatial spread of the characteristic X-ray generation region is conventionally known as described above, but the value is displayed on a surface analyzer as a display result as a measurement result of the sample. Does not directly relate to the element distribution map displayed on the display means, and does not correspond to the element distribution map on the display means whose display scale is specified, and is a theoretical value of the spatial spread of the characteristic X-ray generation region. Is difficult to compare with the element distribution map, and it is extremely difficult to estimate the exact resolution in the element distribution map.

【0006】本発明は、従来の表面分析装置における面
分析データ表示方法における上記問題点を解消するため
になされたもので、元素分布マップなどの面分析データ
とX線発生領域の空間的拡がり(X線拡散領域)とを容
易に比較することができ、元素分布マップなどの面分析
データの正確な分解能を容易に把握することが可能な、
表面分析装置における面分析データ表示方法を提供する
ことを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem in the surface analysis data display method in the conventional surface analysis apparatus, and the surface analysis data such as an element distribution map and the spatial expansion of the X-ray generation region ( X-ray diffusion region), and it is possible to easily grasp the accurate resolution of surface analysis data such as an element distribution map.
An object of the present invention is to provide a surface analysis data display method in a surface analysis device.

【0007】[0007]

【課題を解決するための手段】上記問題点を解決するた
め、本発明は、電子線を照射した試料表面から発生する
特性X線を分光・検出する手段と、電子線又は試料ステ
ージを二次元的に走査することにより二次元的に得られ
る特性X線計数値を元素分布マップとして表示する表示
手段とを有する電子線を用いた表面分析装置における面
分析データ表示方法において、前記元素分布マップ表示
手段に、元素分布マップ上に、予め理論的に又は実測に
より求めた特性X線の平面方向における発生領域の空間
的拡がりを、スケールを合わせて同時に重ねて表示する
ことを特徴とするものである。
In order to solve the above-mentioned problems, the present invention provides a means for spectrally detecting and detecting characteristic X-rays generated from a sample surface irradiated with an electron beam, and a two-dimensional electron beam or sample stage. A display means for displaying a characteristic X-ray count value obtained two-dimensionally as an element distribution map by scanning in a surface analysis apparatus using an electron beam. Means are characterized in that the spatial spread of the generation region in the plane direction of the characteristic X-ray, which has been theoretically or actually measured in advance, is simultaneously superimposed and displayed on the element distribution map in accordance with the scale. .

【0008】このように、試料の表面分析結果を示す元
素分布マップのスケールに合わせて、理論的に又は実測
により求めたX線発生領域の空間的拡がりを同時に重ね
て表示することにより、両者を直観的に正確に比較する
ことができ、元素分布マップのぼけ部分が試料中の元素
分布の勾配(拡がり)によるものなのか、あるいはX線
発生領域の拡がり(X線拡散領域)の影響で拡がって見
えるのかを定量的に判定することができ、元素分布マッ
プ上の分解能を正確に把握することが可能となる。
As described above, the spatial extent of the X-ray generation region, which is theoretically or actually measured, is simultaneously displayed in accordance with the scale of the element distribution map showing the result of the surface analysis of the sample, so that both are displayed. The comparison can be made intuitively and accurately. The blurred portion of the element distribution map may be due to the gradient (spread) of the element distribution in the sample, or may be spread due to the spread of the X-ray generation region (X-ray diffusion region). Can be quantitatively determined, and the resolution on the element distribution map can be accurately grasped.

【0009】[0009]

【発明の実施の形態】次に、実施の形態について説明す
る。図1は、本発明に係る電子線を用いた表面分析装置
における面分析データの表示方法の一実施の形態を適用
した電子プローブマイクロアナライザ(EPMA)の全
体構成を示すブロック構成図である。図1において、1
はEPMAの電子銃、2は集束レンズ、3は対物レン
ズ、4はスキャンコイル、5は光学顕微鏡、6は面分析
のための被験試料、7は駆動装置を含む試料ステージ、
8はスキャンコイル4を駆動する電子線走査装置、9は
WDSの分光結晶、10はX線検出器、11はWDSの波長
走査のための分光結晶9の駆動装置、12はX線検出器10
で検出されたX線信号の処理装置、13はX線信号処理装
置12で得られたX線強度データの記憶装置、14は試料ス
テージ7の駆動装置、電子線走査装置8及び分光結晶駆
動装置11のインタフェース、15はEPMAの装置制御並
びに収集データの各種処理を行う演算装置、16はX線発
生領域の空間的拡がりを求めるために必要なデータを記
憶するためのデータベース、17は演算装置15で所定の処
理が施された元素のX線強度分布データやX線拡散領域
の空間的拡がり等を重ねて表示できるようにしたディス
プレイ装置、18はマウス、キーボードなどの入力装置で
ある。
Next, an embodiment will be described. FIG. 1 is a block diagram showing the overall configuration of an electron probe microanalyzer (EPMA) to which an embodiment of a method for displaying surface analysis data in a surface analyzer using an electron beam according to the present invention is applied. In FIG. 1, 1
Is an electron gun of EPMA, 2 is a focusing lens, 3 is an objective lens, 4 is a scan coil, 5 is an optical microscope, 6 is a test sample for surface analysis, 7 is a sample stage including a driving device,
8 is an electron beam scanning device for driving the scan coil 4, 9 is a WDS spectral crystal, 10 is an X-ray detector, 11 is a driving device of the spectral crystal 9 for WDS wavelength scanning, and 12 is an X-ray detector 10
A storage device for the X-ray intensity data obtained by the X-ray signal processing device 12, a driving device for the sample stage 7, an electron beam scanning device 8, and a spectral crystal driving device Reference numeral 11 denotes an interface, 15 denotes an arithmetic unit for controlling the EPMA device and various processes of collected data, 16 denotes a database for storing data necessary for obtaining the spatial expansion of the X-ray generation area, and 17 denotes an arithmetic unit 15 A display device 18 capable of superimposing and displaying the X-ray intensity distribution data of the element subjected to the predetermined processing and the spatial expansion of the X-ray diffusion region, etc., is an input device such as a mouse and a keyboard.

【0010】次に、このように構成されているEPMA
の動作を、図2に示すフローチャートを参照しながら説
明する。電子銃1から放出された電子線は、集束レンズ
2及び対物レンズ3により細く絞られて試料6へ照射さ
れ、試料表面より特性X線を発生させる。試料表面から
の特性X線は、分光結晶9で分光されてX線検出器10で
検出され、検出されたX線信号はX線信号処理装置12で
処理され、X線強度データが得られる。
Next, the EPMA configured as described above
Will be described with reference to the flowchart shown in FIG. The electron beam emitted from the electron gun 1 is narrowed down by the focusing lens 2 and the objective lens 3 and irradiated onto the sample 6 to generate characteristic X-rays from the sample surface. The characteristic X-rays from the sample surface are separated by the spectral crystal 9 and detected by the X-ray detector 10, and the detected X-ray signal is processed by the X-ray signal processor 12 to obtain X-ray intensity data.

【0011】この際、電子線をスキャンコイル4を用い
て二次元的に走査させたり、試料ステージ7を二次元的
に走査することにより、試料表面の元素のX線強度分布
データ(元素分布マップデータ)を収集することができ
る(ステップS1)。X線強度分布のデータは記憶装置
13に蓄えられ、演算装置15により所定の処理が施され
て、元素分布マップとしてディスプレイ装置17に表示さ
れる。そして、このときX線発生領域の空間的拡がり、
すなわちX線拡散領域を元素分布マップに重ねて表示す
るか否かを決定し(ステップS2)、重ねて表示しよう
とする場合に、X線強度分布を測定したときの電子線の
加速電圧や試料組成に対応するX線拡散に関するデータ
がデータベース16に蓄えられているときには、それを読
み出し(ステップS3,S4)、そのX線拡散領域の表
示方法及び元素分布マップの表示条件を指定して(ステ
ップS7,S8)、X線拡散領域と元素分布マップとを
重ねてディスプレイ装置17に表示させる(ステップS
9)。
At this time, X-ray intensity distribution data (element distribution map) of the elements on the sample surface is obtained by scanning the electron beam two-dimensionally using the scan coil 4 or scanning the sample stage 7 two-dimensionally. Data) can be collected (step S1). X-ray intensity distribution data is stored in a storage device
13 and subjected to predetermined processing by the arithmetic unit 15 and displayed on the display device 17 as an element distribution map. Then, at this time, the spatial spread of the X-ray generation area,
That is, it is determined whether or not the X-ray diffusion region is to be superimposed on the element distribution map (Step S2). When the X-ray diffusion region is to be superimposed and displayed, the acceleration voltage of the electron beam and the sample when the X-ray intensity distribution is measured are determined. When data on the X-ray diffusion corresponding to the composition is stored in the database 16, the data is read out (steps S3 and S4), and the display method of the X-ray diffusion region and the display conditions of the element distribution map are designated (step S3). (S7, S8), the X-ray diffusion region and the element distribution map are superimposed and displayed on the display device 17 (step S7).
9).

【0012】一方、X線拡散に関するデータがデータベ
ース16に蓄えられていない場合には、X線拡散領域の大
きさを算出する動作に入る。この動作ステップでは、ま
ず拡散領域計算条件の指定を行い(ステップS5)、そ
れに基づいてX線拡散領域の算出を行う(ステップS
6)。X線拡散領域の大きさの求め方には、モンテカル
ロシミュレーション等の計算により求める方法と、異な
る物質を張り合わせた接合面を線分析することにより、
実測値から求める方法がある。
On the other hand, when data relating to X-ray diffusion is not stored in the database 16, the operation starts to calculate the size of the X-ray diffusion region. In this operation step, first, a diffusion region calculation condition is specified (step S5), and an X-ray diffusion region is calculated based thereon (step S5).
6). The size of the X-ray diffusion region can be calculated by a method such as Monte Carlo simulation or by performing a line analysis on a bonded surface where different materials are bonded.
There is a method of obtaining from actual measurement values.

【0013】図3は、モンテカルロシミュレーションに
より電子線径が無視できる場合の発生X線の平面方向の
強度分布からX線拡散領域を求める態様を示す図で、21
は試料22の表面に照射される電子線、23は試料22の断面
部分における電子線の軌跡であり、24は電子線の軌跡に
対応して発生するX線の発生強度分布を横軸を試料位置
(距離)として示している。このX線の発生強度分布
は、電子線の加速電圧、物質の組成、平均密度を与える
ことにより求められる。図3に示す態様は、電子線径を
無視した場合の態様であるが、電子線径を考慮する場合
は、拡散領域の中心に電子線径分を加えて求めればよ
い。なお、図3に示されている分布態様は、一方向から
見た分布態様であり、X,Yの各平面方向への拡がり
は、図3の分布態様を平面方向に回転することにより求
められる。
FIG. 3 is a diagram showing an embodiment in which an X-ray diffusion region is obtained from the intensity distribution of generated X-rays in the plane direction when the electron beam diameter can be ignored by Monte Carlo simulation.
Is the electron beam irradiating the surface of the sample 22, 23 is the trajectory of the electron beam in the cross section of the sample 22, and 24 is the X-ray generation intensity distribution corresponding to the electron beam trajectory on the horizontal axis. It is shown as a position (distance). This X-ray intensity distribution can be determined by giving the acceleration voltage of the electron beam, the composition of the substance, and the average density. The mode shown in FIG. 3 is a mode in which the electron beam diameter is ignored. However, when the electron beam diameter is taken into consideration, the electron beam diameter may be added to the center of the diffusion region. Note that the distribution mode shown in FIG. 3 is a distribution mode viewed from one direction, and the spread of X and Y in each plane direction is obtained by rotating the distribution mode of FIG. 3 in the plane direction. .

【0014】図4は、異なる物質を張り合わせた接合面
を線分析したX線強度データからX線発生領域の拡がり
(X線拡散領域)を求める態様を示す説明図である。図
4において、31は線分析により得られた実測X線強度デ
ータ曲線であり、32は線分析X線強度データ曲線31から
変換されて求められたX線強度分布曲線である。X線強
度分布曲線32は、次のようにして求められる。まず、線
分析により得られたX線強度データ曲線31を縦に任意の
分割数kに分割する。分割のi番目のX線強度をFi ,
求めるべき強度分布のi番目の強度をfi とすると、次
式(1)の関係から、fi を求めることができる。 Fi =(Σfi )/(Σfi ) ・・・・・・・・・・(1) ここで、分子の総和記号Σの総和範囲はi=1〜iであ
り、分母の総和記号Σの総和範囲はi=1〜kである。
すなわち、強度分布曲線32は線分析X線強度データ曲線
31の微分値として求められる。
FIG. 4 is an explanatory view showing a mode of obtaining the spread of the X-ray generation region (X-ray diffusion region) from the X-ray intensity data obtained by linearly analyzing the bonding surface where different materials are bonded. In FIG. 4, reference numeral 31 denotes an actually measured X-ray intensity data curve obtained by the line analysis, and reference numeral 32 denotes an X-ray intensity distribution curve obtained by conversion from the line analysis X-ray intensity data curve 31. The X-ray intensity distribution curve 32 is obtained as follows. First, the X-ray intensity data curve 31 obtained by the line analysis is vertically divided into an arbitrary division number k. The i-th X-ray intensity of the division is Fi,
Assuming that the i-th intensity of the intensity distribution to be obtained is fi, fi can be obtained from the relationship of the following equation (1). Fi = (Σfi) / (Σfi) (1) Here, the sum range of the sum symbol Σ of the numerator is i = 1 to i, and the sum range of the sum symbol Σ of the denominator. Is i = 1 to k.
That is, the intensity distribution curve 32 is a line analysis X-ray intensity data curve.
Calculated as the derivative of 31.

【0015】上記図3に示した算出法により求めたX線
拡散領域のデータ、あるいは図4に示した線分析データ
(X線強度分布データ)に基づいて求められたX線拡散
領域のデータは、横軸の距離と強度の関係を数値の組み
合わせで表して、そのまま用いるようにしてもよいし、
あるいは誤差関数で近似して必要な関数のパラメータの
みを保存し、使用するようにしてもよい。また、これら
のX線拡散領域のデータは、予め計算により求めてデー
タベース16に格納しておいて条件に合うものを読み出し
て使用してもよいし、マップデータの測定条件に合わせ
て計算して用いるようにしてもよい。
The data of the X-ray diffusion region obtained by the calculation method shown in FIG. 3 or the data of the X-ray diffusion region obtained based on the line analysis data (X-ray intensity distribution data) shown in FIG. , The relationship between the distance on the horizontal axis and the intensity may be represented by a combination of numerical values and used as it is,
Alternatively, only parameters of a necessary function may be stored by approximation with an error function and used. Further, the data of these X-ray diffusion regions may be obtained in advance by calculation and stored in the database 16 to read and use data meeting the conditions, or may be calculated according to the measurement conditions of the map data. It may be used.

【0016】次に、ディスプレイ装置17における元素分
布マップとX線拡散領域の重ね表示方法について説明す
る。図5は、元素分布マップに同心円で表したX線拡散
領域(X線発生領域の拡がり)を重ねて表示した態様を
示す図である。この同心円で表したX線拡散領域は、例
えば同心円の最内側は電子線径を示し、外側に向かって
次の円からは図3に示した態様で求められたX線強度分
布の最大値から2割ずつ強度が低下する毎に半径を変え
て表示するようにしたものである。なお、同心円で示し
たX線強度分布のスケールと元素分布マップのスケール
は、合わせて表示されるものとする。また、X線発生強
度分布を表す同心円を表示する位置は、マウスなどのポ
インティングデバイスで、適切な位置へ適宜指定又はド
ラッグできるようにする。
Next, a method of superimposing the element distribution map and the X-ray diffusion region on the display device 17 will be described. FIG. 5 is a diagram showing a mode in which an X-ray diffusion region (expansion of the X-ray generation region) represented by a concentric circle is superimposed and displayed on the element distribution map. In the X-ray diffusion region represented by the concentric circles, for example, the innermost side of the concentric circles indicates the electron beam diameter, and from the next circle toward the outside, from the maximum value of the X-ray intensity distribution obtained in the manner shown in FIG. Each time the intensity decreases by 20%, the radius is changed and displayed. It should be noted that the scale of the X-ray intensity distribution and the scale of the element distribution map indicated by concentric circles are displayed together. The position at which the concentric circle representing the X-ray generation intensity distribution is displayed can be appropriately designated or dragged to an appropriate position using a pointing device such as a mouse.

【0017】また、元素分布マップとX線拡散領域(X
線発生強度分布)を、前記図5に示したように同心円で
平面的に表示するのみでなく、図6に示すように、元素
分布マップの強度分布をラインプロファイル表示したと
きには、X線拡散領域も図4に示したようなX線強度分
布曲線を強度分布プロファイルとして表し、元素分布マ
ップ上に重ねて表示するのが好ましい。
The element distribution map and the X-ray diffusion region (X
When the intensity distribution of the element distribution map is displayed as a line profile as shown in FIG. 6 in addition to the concentric circle as shown in FIG. Also, it is preferable that the X-ray intensity distribution curve as shown in FIG. 4 be represented as an intensity distribution profile and displayed by being superimposed on the element distribution map.

【0018】上記図1に示したEPMAでは、WDSを
用いて試料表面から発生する特性X線を分光検出するよ
うにしたものを示したが、WDSの代わりにEDS検出
器を用いて特性X線を検出するように構成したものに
も、同様に本発明は適用でき、同様な重ね表示を行うこ
とができる。また、本発明はEPMAのみならず、分析
機能を有する走査形電子顕微鏡などの他の表面分析装置
にも同様に適用することができる。
In the EPMA shown in FIG. 1, the characteristic X-ray generated from the sample surface is spectrally detected using WDS, but the characteristic X-ray is detected using an EDS detector instead of WDS. The present invention can be similarly applied to a device configured to detect the image, and similar superimposed display can be performed. Further, the present invention can be similarly applied to not only EPMA but also other surface analyzers such as a scanning electron microscope having an analysis function.

【0019】[0019]

【発明の効果】以上実施の形態に基づいて説明したよう
に、本発明によれば、試料の表面分析結果を表示する元
素分布マップのスケールに合わせて、理論的に又は実測
により求めたX線発生領域の空間的拡がり(X線拡散領
域)を同時に重ねて表示するようにしているので、元素
分布マップとX線発生領域の空間的拡がりとを直観的に
正確に比較することができ、元素分布マップ上の分解能
を正確に把握することが可能となる。
As described above with reference to the embodiments, according to the present invention, X-rays obtained theoretically or by actual measurement in accordance with the scale of an element distribution map for displaying the results of surface analysis of a sample. Since the spatial spread of the generation region (X-ray diffusion region) is simultaneously displayed in an overlapping manner, the element distribution map and the spatial spread of the X-ray generation region can be intuitively and accurately compared, and the It is possible to accurately grasp the resolution on the distribution map.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る表面分析装置における面分析デー
タ表示方法を適用したEPMAの全体構成を示すブロッ
ク構成図である。
FIG. 1 is a block diagram showing an overall configuration of an EPMA to which a surface analysis data display method in a surface analysis apparatus according to the present invention is applied.

【図2】図1に示したEPMAの動作を説明するための
フローチャートである。
FIG. 2 is a flowchart for explaining an operation of the EPMA shown in FIG. 1;

【図3】モンテカルロシミュレーションにより電子線径
が無視できる場合の発生X線強度分布からX線発生領域
の空間的拡がり(X線拡散領域)を求める態様を示す図
である。
FIG. 3 is a diagram showing a mode of obtaining a spatial spread (X-ray diffusion region) of an X-ray generation region from a generated X-ray intensity distribution when an electron beam diameter can be ignored by Monte Carlo simulation.

【図4】異なる物質を張り合わせた接合面を線分析した
実測データからX線発生領域の空間的拡がり(X線拡散
領域)を求める態様を示す図である。
FIG. 4 is a diagram showing a mode of obtaining a spatial spread (X-ray diffusion region) of an X-ray generation region from measured data obtained by linear analysis of a bonding surface where different materials are bonded.

【図5】元素分布マップに同心円で表したX線拡散領域
を重ねて表示した態様を示す図である。
FIG. 5 is a diagram showing an aspect in which an X-ray diffusion region represented by a concentric circle is displayed on an element distribution map.

【図6】元素分布マップにX線強度分布プロファイルで
表したX線拡散領域を重ねて表示した態様を示す図であ
る。
FIG. 6 is a diagram showing an aspect in which an X-ray diffusion region represented by an X-ray intensity distribution profile is superimposed and displayed on an element distribution map.

【符号の説明】[Explanation of symbols]

1 電子銃 2 集束レンズ 3 対物レンズ 4 スキャンコイル 5 光学顕微鏡 6 試料 7 試料ステージ 8 電子線走査装置 9 WDS分光結晶 10 X線検出器 11 分光結晶駆動装置 12 X線信号処理装置 13 記憶装置 14 インタフェース 15 演算装置 16 データベース 17 ディスプレイ装置 18 入力装置 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Focusing lens 3 Objective lens 4 Scan coil 5 Optical microscope 6 Sample 7 Sample stage 8 Electron beam scanning device 9 WDS spectral crystal 10 X-ray detector 11 Spectrum crystal driving device 12 X-ray signal processing device 13 Storage device 14 Interface 15 Computing unit 16 Database 17 Display unit 18 Input unit

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 電子線を照射した試料表面から発生する
特性X線を分光・検出する手段と、電子線又は試料ステ
ージを二次元的に走査することにより二次元的に得られ
る特性X線計数値を元素分布マップとして表示する表示
手段とを有する電子線を用いた表面分析装置における面
分析データ表示方法において、前記元素分布マップ表示
手段に、元素分布マップ上に、予め理論的に又は実測に
より求めた特性X線の平面方向における発生領域の空間
的拡がりを、スケールを合わせて同時に重ねて表示する
ことを特徴とする面分析データ表示方法
1. A means for spectrally detecting and detecting characteristic X-rays generated from the surface of a sample irradiated with an electron beam, and a characteristic X-ray meter obtained two-dimensionally by scanning an electron beam or a sample stage two-dimensionally. In a surface analysis data display method in a surface analyzer using an electron beam having a display means for displaying a numerical value as an element distribution map, the element distribution map display means, on an element distribution map, in advance by theoretical or actual measurement A surface analysis data display method characterized in that the spatial expansion of the generated region in the plane direction of the characteristic X-rays is displayed at the same time while being scaled.
JP2000249147A 2000-08-21 2000-08-21 Surface analysis data display method in surface analyzer using electron beam Expired - Fee Related JP3950619B2 (en)

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JP2004163135A (en) * 2002-11-11 2004-06-10 Jeol Ltd X-ray analysis apparatus
JP2005201640A (en) * 2004-01-13 2005-07-28 Jeol Ltd Sample evaluation method and sample evaluating device
JP4498751B2 (en) * 2004-01-13 2010-07-07 日本電子株式会社 Sample evaluation method and sample evaluation apparatus
JP2006054894A (en) * 2004-08-13 2006-02-23 General Electric Co <Ge> Method and device for displaying pixel data
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JP2022021153A (en) * 2020-07-21 2022-02-02 日本電子株式会社 Charged particle beam device and setting support method
JP2022021152A (en) * 2020-07-21 2022-02-02 日本電子株式会社 Charged particle beam device and setting support method
JP7127088B2 (en) 2020-07-21 2022-08-29 日本電子株式会社 Charged particle beam device and setting support method
JP7127089B2 (en) 2020-07-21 2022-08-29 日本電子株式会社 Charged particle beam device and setting support method
US11557458B2 (en) 2020-07-21 2023-01-17 Jeol Ltd. Charged particle beam apparatus and setting assisting method
US11574795B2 (en) 2020-07-21 2023-02-07 Jeol Ltd. Charged particle beam apparatus and setting assisting method
US11587761B2 (en) 2020-07-21 2023-02-21 Jeol Ltd. Charged particle beam apparatus and setting assisting method

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