JPS6416905A - Method for measuring film thickness by using electron probe x-ray analyzer - Google Patents

Method for measuring film thickness by using electron probe x-ray analyzer

Info

Publication number
JPS6416905A
JPS6416905A JP62173699A JP17369987A JPS6416905A JP S6416905 A JPS6416905 A JP S6416905A JP 62173699 A JP62173699 A JP 62173699A JP 17369987 A JP17369987 A JP 17369987A JP S6416905 A JPS6416905 A JP S6416905A
Authority
JP
Japan
Prior art keywords
thickness
sample
calculated
intensity
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173699A
Other languages
Japanese (ja)
Inventor
Toyohiko Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP62173699A priority Critical patent/JPS6416905A/en
Publication of JPS6416905A publication Critical patent/JPS6416905A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

PURPOSE:To measure the thickness of an extremely thin thickness by determining thickness of an unknown sample by an electronic computer in accordance with the data on the intensity of the characteristic X-rays obtd. by projecting electron rays on a standard sample and the unknown sample and the data indicating density. CONSTITUTION:The intensities of the Malpha rays of Au obtd. by projecting the electron beams on the sample and the standard sample are detected by a spectral crystal and the data If, Ip on the intensity values are stored in the electronic computer in the case of measuring the thickness of, for example, a vapor deposited Au film. The relative intensity K=If/Ip is then calculated. The intensity of the reflected electrons when the electron beams are projected on the sample is then measured and the apparent atomic number Z' is calculated in accordance with the intensity value thereof. The average backward scattering coefft. eta of the sample is determined in accordance with the number Z'. Since an overvoltage ratio V is known, a correction factor (d) is calculated by the prescribed equation. The correction K'=K.d of the relative intensity is calculated and the calculated correction value K' is substd. into the prescribed equation, by which a mass thickness rhot is determined and further, the thickness (t) of the sample is determined. The thickness are respectively displayed on a display. The thickness of the extremely thin film is thus measured.
JP62173699A 1987-07-11 1987-07-11 Method for measuring film thickness by using electron probe x-ray analyzer Pending JPS6416905A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173699A JPS6416905A (en) 1987-07-11 1987-07-11 Method for measuring film thickness by using electron probe x-ray analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173699A JPS6416905A (en) 1987-07-11 1987-07-11 Method for measuring film thickness by using electron probe x-ray analyzer

Publications (1)

Publication Number Publication Date
JPS6416905A true JPS6416905A (en) 1989-01-20

Family

ID=15965482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173699A Pending JPS6416905A (en) 1987-07-11 1987-07-11 Method for measuring film thickness by using electron probe x-ray analyzer

Country Status (1)

Country Link
JP (1) JPS6416905A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002039976A (en) * 2000-07-19 2002-02-06 Shimadzu Corp Method for correcting measured data of electron beam micro-analyzer
JP2002062270A (en) * 2000-08-21 2002-02-28 Jeol Ltd Method of displaying face analysis data in surface analyzer using electron beam
JP2004163135A (en) * 2002-11-11 2004-06-10 Jeol Ltd X-ray analysis apparatus
WO2016016644A1 (en) * 2014-07-29 2016-02-04 Oxford Instruments Nanotechnology Tools Limited A method for measuring the mass thickness of a target sample for electron microscopy
EP3944281A1 (en) 2020-07-21 2022-01-26 Jeol Ltd. Charged particle beam apparatus and setting assisting method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002039976A (en) * 2000-07-19 2002-02-06 Shimadzu Corp Method for correcting measured data of electron beam micro-analyzer
JP2002062270A (en) * 2000-08-21 2002-02-28 Jeol Ltd Method of displaying face analysis data in surface analyzer using electron beam
JP2004163135A (en) * 2002-11-11 2004-06-10 Jeol Ltd X-ray analysis apparatus
WO2016016644A1 (en) * 2014-07-29 2016-02-04 Oxford Instruments Nanotechnology Tools Limited A method for measuring the mass thickness of a target sample for electron microscopy
US10054557B2 (en) 2014-07-29 2018-08-21 Oxford Instruments Nanotechnology Tools Limited Method for measuring the mass thickness of a target sample for electron microscopy
EP3944281A1 (en) 2020-07-21 2022-01-26 Jeol Ltd. Charged particle beam apparatus and setting assisting method
US11574795B2 (en) 2020-07-21 2023-02-07 Jeol Ltd. Charged particle beam apparatus and setting assisting method

Similar Documents

Publication Publication Date Title
JPH05240808A (en) Method for determining fluorescent x rays
Boldeman et al. The neutron capture cross section of natural silicon
JPS6416905A (en) Method for measuring film thickness by using electron probe x-ray analyzer
US4326801A (en) Method for emission spectrochemical analysis
JPH06123717A (en) Fluorescent x-ray qualitative analytical method under plurality of conditions
JPH04249741A (en) Method for x-ray spectrochemical analysis of sample coated with thin film
US4059762A (en) Method and apparatus for determining accuracy of radiation measurements made in the presence of background radiation
JPS646751A (en) Quantification of inclusion and deposit
JPH06337252A (en) Fluorescent x ray analytic method
US2890344A (en) Analysis of materials by x-rays
US3691386A (en) Data processing system employing quench simulation for enabling accurate computation of sample activity levels in liquid scintillation spectrometry
JPH08334481A (en) X-ray fluorescent analysis
USH922H (en) Method for analyzing materials using x-ray fluorescence
JPS57197410A (en) Measuring method of adhered amount of high polymer film on metallic plate
Hoyt The scintillation counter as a proportional device
JPH05119000A (en) Fluorescent x-ray analyzing device
JP4279983B2 (en) X-ray fluorescence analyzer
JPS6170444A (en) Concentration analyzing method in electron ray micro-analysis instrument
JP2896904B2 (en) Calibration curve creation method for fluorescent X-ray film thickness measurement
JP2645227B2 (en) X-ray fluorescence analysis method
Robertson et al. Photometry of X-ray crystal diffraction diagrams
JP3377328B2 (en) X-ray fluorescence analysis method
JP2685722B2 (en) X-ray analysis method
McGonnagle et al. Analysis of Fuel Element Core Blanks for Argonne Low Power Reactor by Gamma Counting
Natelson et al. Microestimation of sodium, magnesium, and barium with the X-ray spectrometer