JP2002057191A - Semiconductor device, production method therefor and film for semiconductor chip adhesion to be used for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that it is difficult to capture conductive particles between small electrodes since the fluidity of a resin adhesive is high in a conventional film for adhesion added only with conductive particles and a bonding layer in the form of circular arc along with the peripheral side of a semiconductor chip is not formed because of the low fluidity of the resin adhesive in a film added and adhered only with non-conductive particles. SOLUTION: Since the film for adhesion is composed of a first adhesive layer composed of the resin adhesive containing conductive particles and non- conductive particles and a second adhesive layer containing no non-conductive particle, in the adhesion with the semiconductor chip, the bonding layer in the form of circular arc along with the peripheral side of the semiconductor chip is formed by the second adhesive layer and even a small electrode on the side of the semiconductor chip can sufficiently capture conductive particles by means of the first adhesive layer, with which flowing is suppressed by containing non-conductive particles.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device to which a semiconductor chip bonding film is applied, a method of manufacturing the semiconductor device, and a method of mounting a semiconductor device having excellent reliability. The present invention relates to a chip bonding film.

[0002]

2. Description of the Related Art As a method for mounting a semiconductor chip having fine electrode spacing at a high density, a thermosetting semiconductor chip bonding film (hereinafter simply referred to as bonding film) provided on a wiring board is heated. A flip chip mounting method in which the semiconductor chip is mechanically and electrically connected to the wiring board by pressing the formed semiconductor chip is effective.

[0003] There are roughly three types of conventional adhesive films. That is, a single-layer adhesive film made of a resin-based adhesive containing conductive particles having a particle size of 5 μm (hereinafter referred to as “adhesive film I”), and a first adhesive layer made of a resin-based adhesive containing conductive particles. And a second adhesive layer made of a resin-based adhesive containing no conductive particles (hereinafter referred to as “adhesive film II”), and only a resin-based adhesive containing no conductive particles. This is a method using a single-layer adhesive film (hereinafter, referred to as adhesive film III). Incidentally, an adhesive film containing conductive particles is particularly called an anisotropic conductive adhesive film.

[0004] A method of mounting a semiconductor chip using each bonding film will be described below with reference to the drawings.

FIG. 8 shows a conventional method for mounting a semiconductor chip using a single-layer adhesive film I made of a resin-based adhesive containing conductive particles. An example of such a connection structure of a semiconductor chip is disclosed in FIG. 1 of Japanese Patent Application Laid-Open No. 60-180132.

In the figure, 2 is a conductive particle, 4 is a semiconductor chip,
5 is an electrode on the semiconductor chip side, 6 is a wiring board, 7 is an electrode on the wiring board, 105 is a single-layer bonding film (bonding film I) made of a resin-based adhesive containing conductive particles 2, and 205 is The bonding layer after heat curing is shown.

FIG. 8A is a cross-sectional view showing a state in which the adhesive film 105 is adhered on the wiring board 6, and FIG.
Shows cross-sectional views in a state where the semiconductor chip 4 heated to about 200 ° C. is pressed.

[0008] As shown in FIG. 8 (b), by sandwiching the conductive particles 2 contained in the single-layer bonding film 105 between the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board,
Electrical connection between the semiconductor chip 4 and the wiring board 6 is realized.

FIG. 9 shows a conventional adhesive film II consisting of a first adhesive layer made of a resin-based adhesive containing conductive particles and a second adhesive layer made of a resin-based adhesive containing no conductive particles. 1 shows a method of mounting a semiconductor chip using the method. Such a mounting method is described in "Anisotropic Conductive Material for Flip Chip Connection", Takemura et al., (1999), Journal of Electronics Packaging Society, Vol. 2, No. 2, pp. 99-103.

In the drawing, reference numeral 106a denotes a first adhesive layer made of a resin-based adhesive containing conductive particles 2, and 106b denotes a second adhesive layer made of a resin-based adhesive containing no conductive particles 2.
Reference numeral 06 denotes a bonding layer after heat curing.

FIG. 9A is a cross-sectional view showing a state in which the adhesive film 106 is attached to the wiring board 6, and FIG.
Sectional views of a state where the semiconductor chip 4 heated to 0 ° C. is pressed are shown.

When the heated semiconductor chip 4 is pressed against the wiring board 6, the conductive particles 2 are dispersed in the second adhesive layer 106b, and between the electrodes 5 on the semiconductor chip side and between the electrodes 7 on the wiring board, respectively. Since the occurrence of aggregation of the conductive particles 2 can be prevented, the conductive particles 2 are sandwiched between the electrodes 5 on the semiconductor chip side and the electrodes 7 on the wiring board while maintaining high insulation between the plurality of electrodes 5 of the semiconductor chip 4. And the semiconductor chip 4 and the wiring board 6
Are electrically connected to each other, so that the semiconductor chip 4 having a small space between the electrodes 5 can be mounted.

FIG. 10 shows a conventional method of mounting a semiconductor chip using a single-layer adhesive film (adhesive film III) made of a resin-based adhesive containing no conductive particles 2.
The connection structure of such a semiconductor chip is disclosed in JP-A-9-97816.
FIG.

FIG. 10A is a cross-sectional view showing a state in which an adhesive film 107 is attached to the wiring board 6, and FIG. 10B is a cross-sectional view showing a state in which the semiconductor chip 4 heated to about 200 ° C. is pressed. Shown respectively. In the drawing, reference numeral 207 denotes a bonding layer after heat curing.

The electrical connection between the semiconductor chip 4 and the wiring board 6 is obtained by mechanical contact between the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board. That is, when the electrode 5 provided on the semiconductor chip 4 is deformed, the surrounding resin-based adhesive 107 is removed, so that mechanical contact between the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board is obtained. As a result, the electrical connection between the semiconductor chip 4 and the wiring board 6 is realized.

FIG. 11 shows a conventional semiconductor chip mounting method using a single-layer adhesive film made of a resin-based adhesive containing no conductive particles. Such a method of connecting semiconductor chips is disclosed in FIG. 1 of Japanese Patent Application Laid-Open No. 10-335373.

FIG. 11A shows a state in which the semiconductor chip 4 is pressed through the adhesive film 109 previously arranged on the wiring board 6 and ultrasonic vibration 12 is applied to join the semiconductor chip 4 and the wiring board 6. FIG. FIG.
(B) shows that the bonding film 109 is heated by heating the bonding film 109.
1 shows a cross-sectional view of a cured state. Electrodes 5 on the side of semiconductor chip 4 and wiring substrate 6 which are solid-phase bonded by ultrasonic vibration 12
The semiconductor chip 4 and the wiring board 6 are electrically connected via the electrode 7 on the side.

[0018]

The bonding films I, II and III described above have the following problems.

In the case of a single-layer adhesive film 105 (adhesive film I, FIG. 8) made of a resin-based adhesive containing the conductive particles 2, the adhesive film 105 is formed when the heated semiconductor chip 4 is pressed. The viscosity of the resin adhesive decreases due to liquefaction, and the resin adhesive itself flows. As a result, the number of conductive particles 2 that can be trapped between the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board is significantly reduced from the value estimated to be able to be supplemented from the original content of the conductive particles. However, there is a problem that the conduction resistance increases.

In order to suppress the flow of the resin-based adhesive, it is effective to uniformly mix non-conductive particles throughout the bonding film 105. However, the flow of the entire bonding film caused by mixing of the non-conductive particles is effective. As shown in FIG. 12, the bonding layer 208 discharged to the peripheral side of the semiconductor chip 4 after heat curing does not form an arc shape along the peripheral side of the semiconductor chip 4 but decreases from the lower end of the semiconductor chip 4 due to the decrease in the property. Since it has a shape that swells at a distant portion, that is, the convex shape 11, there is a problem that the mechanical strength between the semiconductor chip 4 and the wiring board 6 is reduced.

An adhesive film 106 composed of two layers, a first adhesive layer 106a made of a resin adhesive containing conductive particles 2 and a second adhesive layer 106b made of a resin adhesive containing no conductive particles. (Adhesive film II, Fig. 9)
Is different from the single-layer adhesive film I in that the semiconductor chip 4 and the first adhesive layer 106a containing the conductive particles 2 do not come into direct contact with each other, so that the insulating property between the electrodes 5 of the semiconductor chip 4 is high. On the other hand, as in the case of using the single-layer adhesive film I, the viscosity of the resin adhesive constituting the adhesive film decreases during liquefaction by heating, and the resin adhesive itself flows. occured.

A single-layer adhesive film 107 (adhesive film II) made of a resin-based adhesive containing no conductive particles
I, FIG. 10) also has the following problems.

That is, the force for maintaining the mechanical contact between the electrode 5 on the semiconductor chip 4 side and the electrode 7 on the wiring board 6 is caused by the difference in thermal contraction between the resin adhesive and the electrode 5. If the thermal expansion of the resin-based adhesive is large, the resin-based adhesive expands at a high temperature, and the electrodes 5 on the semiconductor chip 4 and the electrodes 7 on the wiring board 6 are expanded.
Mechanical contact is lost. In order to stably maintain the mechanical contact between the electrode 5 on the semiconductor chip 4 side and the electrode 7 on the wiring board 6 even at a high temperature, it is necessary to reduce the thermal expansion of the bonding layer 207 after heat curing. In order to reduce such thermal expansion, non-conductive particles may be mixed into the entirety of the bonding film 107. However, in this case, a problem of a decrease in mechanical strength similar to that of the above-described single-layer bonding film I occurs. .

Further, although the conventional adhesive film shown in FIG. 11 is the simplest in structure, as described above, the thermal expansion of the bonding layer 209 after heat curing is increased with the resin adhesive alone. In addition, there is a problem that the mechanical and electrical connection between the electrode 5 on the semiconductor chip 4 side and the electrode 7 on the wiring board 6 side is broken.

The present invention has been devised in view of the above-mentioned problems, and has been developed in a semiconductor device capable of realizing high reliability at low cost, a method of manufacturing the semiconductor device, and a mounting method capable of obtaining the semiconductor device. A semiconductor chip bonding film to be provided.

[0026]

A semiconductor device according to the present invention comprises a semiconductor chip having electrodes, a wiring board having electrodes, and a resin adhesive containing conductive particles and non-conductive particles. An adhesive film having an adhesive layer and a second adhesive layer made of a resin-based adhesive containing no non-conductive particles is provided by attaching the first adhesive layer to the second side of the wiring board on which the electrodes are provided. And an adhesive layer formed by arranging the adhesive layer on the side of the semiconductor chip on which the electrodes are provided and heating and curing the adhesive layer.

Further, a semiconductor device according to the present invention includes a semiconductor chip having electrodes, a wiring board having electrodes,
A first adhesive layer made of a resin-based adhesive containing conductive particles and first non-conductive particles, and a first adhesive layer in the first adhesive layer.
An adhesive film having a second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than the concentration of the non-conductive particles is used as the first adhesive layer. A bonding layer formed by arranging the second adhesive layer on the side where the electrodes of the semiconductor chip are provided and heat-curing the second adhesive layer on the provided side is provided.

Further, a semiconductor device according to the present invention includes a semiconductor chip having electrodes, a wiring board having electrodes,
A first adhesive layer made of a resin-based adhesive containing conductive particles and first non-conductive particles, and a first adhesive layer in the first adhesive layer.
A second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than that of the non-conductive particles and having a small particle diameter, A bonding layer formed by arranging a second adhesive layer on the side of the semiconductor substrate on which the electrodes are provided and heating and curing the second adhesive layer on the side of the wiring board where the electrodes are provided; did.

In the semiconductor device according to the present invention, the first non-conductive particles have a particle size of 1 to 5 μm and a concentration of 40 to 7 μm.
0% by weight, and the particle size of the second non-conductive particles is 0.1%.
When the concentration is 1 μm or more and less than 1.0 μm, the concentration is 10 to 30% by weight.

In the semiconductor device according to the present invention, the concentration of the conductive particles contained in the first adhesive layer is 500,000 to 3,000,000.
It was determined to be one million pieces / mm ³ .

Further, a semiconductor device according to the present invention includes a semiconductor chip having electrodes, a wiring board having electrodes,
A first adhesive layer made of a resin adhesive containing non-conductive particles and a second adhesive layer made of a resin adhesive containing no non-conductive particles
The first adhesive layer is disposed on the side of the wiring board on which the electrodes are provided, and the second adhesive layer is disposed on the side of the semiconductor chip on which the electrodes are provided. And a bonding layer formed by heat curing.

Further, a semiconductor device according to the present invention includes a semiconductor chip having electrodes, a wiring board having electrodes,
A first resin-based adhesive containing first non-conductive particles;
Adhesive film comprising a first adhesive layer and a second adhesive layer comprising a resin-based adhesive containing a second non-conductive particle having a lower concentration than the first non-conductive particle in the first adhesive layer. Is formed by arranging the first adhesive layer on the side of the wiring substrate on which the electrodes are provided and the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided and curing by heating. And a layer.

In the semiconductor device according to the present invention, the concentration of the first non-conductive particles is 40 to 70% by weight, and the concentration of the second non-conductive particles is 10 to 20% by weight. I decided that.

Further, a semiconductor device according to the present invention includes a semiconductor chip having electrodes, a wiring board having electrodes,
A first resin-based adhesive containing first non-conductive particles;
And a second adhesive layer made of a resin-based adhesive containing second non-conductive particles having a lower concentration and a smaller particle size than the concentration of the first non-conductive particles in the first adhesive layer. Disposing the first adhesive layer on the side of the wiring substrate on which the electrodes are provided and the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided, and heat-curing the adhesive film having And a bonding layer formed by the method described above.

In the semiconductor device according to the present invention, the first non-conductive particles have a particle size of 1 to 5 μm and a concentration of 40 to 7 μm.
0% by weight, and the particle diameter of the second non-conductive particles is 0.1%.
When the concentration is 1 μm or more and less than 1.0 μm, the concentration is 10 to 30% by weight.

In the method of manufacturing a semiconductor device according to the present invention, a first adhesive layer made of a resin adhesive containing conductive particles and non-conductive particles and a second adhesive layer made of a resin adhesive containing no non-conductive particles are used. Arranging an adhesive film provided with an adhesive layer on a wiring board, liquefying the adhesive film by heating, bonding the semiconductor chip to the wiring board and electrically connecting them, and then bonding A step of bonding the semiconductor chip onto the wiring board via a bonding layer formed by curing the film by further heating,
Is included.

The film for bonding a semiconductor chip according to the present invention comprises a first adhesive layer comprising a resin adhesive containing conductive particles and non-conductive particles, and a second adhesive layer comprising a resin adhesive containing no non-conductive particles. And an adhesive layer.

Further, the film for bonding a semiconductor chip according to the present invention comprises a first adhesive layer made of a resin adhesive containing conductive particles and first non-conductive particles, and a first adhesive layer in the first adhesive layer. A second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than the concentration of the non-conductive particles.

The film for bonding a semiconductor chip according to the present invention comprises a first adhesive layer made of a resin adhesive containing conductive particles and first non-conductive particles, and a first adhesive layer in the first adhesive layer. A second adhesive layer made of a resin-based adhesive containing second non-conductive particles having a concentration lower than the concentration of the non-conductive particles and having a smaller particle size.

The film for bonding a semiconductor chip according to the present invention comprises a first adhesive layer made of a resin-based adhesive containing non-conductive particles and a second adhesive layer made of a resin-based adhesive containing no non-conductive particles. And an adhesive layer.

Further, the film for bonding a semiconductor chip according to the present invention comprises a first adhesive layer made of a resin-based adhesive containing first non-conductive particles, and a first non-conductive particle in the first adhesive layer. And a second adhesive layer made of a resin adhesive containing a second non-conductive particle having a concentration lower than that of the second adhesive layer.

Further, the film for bonding a semiconductor chip according to the present invention comprises a first adhesive layer made of a first resin-based adhesive containing first non-conductive particles, and a first adhesive layer in the first adhesive layer. A second adhesive layer made of a resin-based adhesive containing second non-conductive particles having a concentration lower than the concentration of the non-conductive particles and having a smaller particle size.

[0043]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention maintains the reproducibility of the thickness of a bonding layer formed after heating and curing an adhesive film when a semiconductor chip and a wiring board are bonded via an adhesive film. Meanwhile, the bonding film is composed of two adhesive layers so that the bonding layer covers a predetermined portion on the peripheral side of the semiconductor chip so that the bonding between the semiconductor chip and the wiring board is sufficiently strong in mechanical strength. Thus, the fluidity of the adhesive layer on the wiring substrate side is made smaller than the fluidity of the adhesive layer on the semiconductor chip side. Hereinafter, the present invention will be described in each embodiment.

Embodiment 1 FIG. 1 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to Embodiment 1 of the present invention. In the figure, reference numeral 101 denotes an adhesive film including a first adhesive layer and a second adhesive layer,
01a is a first adhesive layer made of a resin adhesive containing conductive particles 2 and non-conductive particles 3, 101b is a second adhesive layer made of a resin adhesive, 2 is conductive particles, 3 is non-conductive particles, 4 is a semiconductor chip, 5 is an electrode on the semiconductor chip side, 6
Denotes a wiring board, 7 denotes an electrode on the wiring board, 201 denotes a bonding layer after heat curing, and 8 denotes an arc-shaped portion along the peripheral side of the semiconductor chip in the bonding layer after heat curing.

FIG. 1A is a cross-sectional view showing a state in which an adhesive film 101 is stuck on the wiring board 6, and FIG. 1B is a state in which the semiconductor chip 4 is bonded to the wiring board 6 via the bonding layer 201. 1 is a cross-sectional view of FIG.

The first adhesive layer 101a is disposed so as to cover the surface of the wiring substrate 6 on the side where the electrodes 7 are provided.
A second adhesive layer 101b is further disposed on the adhesive layer 101a, and the adhesive film 101 is sandwiched between the semiconductor chip 4 and the wiring substrate 6 when the semiconductor chip 4 and the wiring substrate 6 are joined.

In consideration of the height of the electrode 5 on the semiconductor chip side of 30 μm and the height of the electrode 7 on the wiring board of 20 μm, the first adhesive layer 101a and the second adhesive layer 101b each have a thickness of 5 μm.
By setting the thickness to 0 μm or 20 μm, the layer thickness of the bonding film 101 is made larger than the layer thickness of the entire electrode.

The thickness of the first adhesive layer 101a is desirably equal to the sum of the height of the electrode 5 on the semiconductor chip side and the height of the electrode 7 on the wiring board, but is not particularly limited to such a value. Absent.

When the semiconductor chip 4 heated to about 200 ° C. is pressed against the bonding film 101, the second bonding layer 101b is once liquefied and flows sufficiently, and then is cured by heating to form the bonding layer 201 in the bonding layer 201. The wiring board 6 extends from the semiconductor chip 4 side along the periphery of the semiconductor chip.
An arc-shaped portion 8 is formed.

As a result, the mechanical strength between the semiconductor chip 4 and the wiring board 6 is improved, and the long-term reliability of the semiconductor device can be secured. The first adhesive layer 101 a made of a resin-based adhesive containing the non-conductive particles 3 contains the non-conductive particles 3 so that the flow of the bonding film 101 in the plane direction of the wiring board 6 is suppressed. Therefore, even with the electrode 5 having a small area on the semiconductor chip side, the number of conductive particles that can reduce the connection resistance sufficiently can be captured.

Specifically, in the conventional single-layer adhesive film containing only the conventional conductive particles (adhesive film I), when the electrode 5 having a diameter of 60 μm on the semiconductor chip side is used,
Although only 10 conductive particles could be captured, in the present embodiment, the number of captured conductive particles was increased to 15, and the connection resistance could be reduced to 2/3 of the conventional value. In the present embodiment, an epoxy resin adhesive having a viscosity of 200 cps at 90 ° C. is used as the adhesive film 101.

However, not limited to epoxy resins,
It goes without saying that a similar effect can be obtained with an adhesive made of a polyimide or acrylic resin.

First adhesive layer 101 made of resin adhesive
The conductive particles 2 contained in a are generally made of a plastic ball made of styrene or the like having a particle size of 5 μm and plated with gold (Au) or nickel (Ni). May be.

The concentration of the conductive particles 2 in the first adhesive layer 101a is preferably in the range of 500,000 to 3,000,000 particles / mm ³ .
Range of 1-2 million units / mm ³ is more preferable.

In the present embodiment, the non-conductive particles 3 contained in the first adhesive layer 101a made of a resin-based adhesive are those containing about 50% by weight of silica having a particle diameter of 1.5 μm. The concentration of the non-conductive particles 3 exhibiting the effects of the present invention is preferably in the range of 20 to 80% by weight, more preferably 40 to 70% by weight, and still more preferably 45 to 55% by weight.
Is desirable. Further, as a material of the non-conductive particles 3,
Alumina, boron nitride, silicon nitride, or the like can be used.

The shape of the bonding layer 201 after heat curing is preferably an arc shape 8 along the peripheral side of the semiconductor chip from the viewpoint of the mechanical strength described above, but the peripheral side of the semiconductor chip is bonded. The same effect is obtained if a bonding layer covering from the application film side to a predetermined portion is formed.
Here, the “predetermined portion” refers to the extent to which the effect of sufficiently increasing the mechanical strength in the present invention can be obtained, that is, the range from 20% to 100% of the entire peripheral portion of the semiconductor chip.

Although the conductive particles are not intentionally contained in the second adhesive layer 101b in the present embodiment, the effect of the present invention is to determine whether or not the conductive particles in the second adhesive layer 101b are present. Occurs regardless of

Embodiment 2 FIG. 2 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to Embodiment 2 of the present invention. In the figure, 31 is a first non-conductive particle, 32 is a second non-conductive particle, 102 is an adhesive film comprising a first adhesive layer and a second adhesive layer, 10
2a is a first adhesive layer made of a resin-based adhesive containing the conductive particles 2 and the first non-conductive particles 31, and 102b is the first adhesive layer.
A second adhesive layer made of a resin-based adhesive containing second non-conductive particles 32 at a concentration lower than the concentration of the first non-conductive particles 31 in the adhesive layer of No. 202; a bonding layer 202 after heat curing; Are respectively shown. The particle size of the second non-conductive particles 32 is the first
Is substantially equal to the particle size of the non-conductive particles 31.

FIG. 2A is a cross-sectional view showing a state in which an adhesive film 102 is adhered on the wiring substrate 6, and FIG. 2B is a diagram in which the semiconductor chip 4 is adhered to the wiring substrate 6 via the adhesive film 102. The cross-sectional views in the state shown are respectively shown.

When the semiconductor chip 4 heated to about 200 ° C. is pressed, the second adhesive layer 102 b made of a resin-based adhesive containing the second non-conductive particles 32 liquefies and flows. The resin adhesive is discharged around the.

First adhesive layer 102 made of resin adhesive
As the non-conductive particles 31 contained in (a), those containing about 50% by weight of silica having a particle size of 1.5 μm were used. The concentration of the first non-conductive particles 31 exhibiting the effect of the present invention is as follows.
The range is preferably 40 to 70% by weight, more preferably 45 to 55% by weight. In addition, the first and second non-conductive particles 3
Alumina, boron nitride, silicon nitride, and the like can be used as the materials 1 and 32.

Second adhesive layer 102 made of resin adhesive
b contains 10 to 20% by weight of the second non-conductive particles 32 which is lower than the concentration of the first non-conductive particles 31 in the first adhesive layer 102a. If so, the fluidity of the resin-based adhesive is not impaired, and the resin discharged to the periphery of the semiconductor chip 4 can form the bonding layer 202 having an arc-shaped shape 8 along the peripheral side of the semiconductor chip.

Since the second adhesive layer 102b contains a relatively low concentration of the second non-conductive particles 32, the viscosity of the second adhesive layer 102b is improved.
The layer thickness control of 2b becomes easy. As a result, the following effects occur. That is, the first adhesive layer 102a needs to be set to the total thickness of the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board, but the height of the electrode 5 on the semiconductor chip side or the electrode thickness on the wiring board is required. When the thickness of the non-conductive particles 31 and 3 is varied near the surface of the semiconductor chip on which the electrode 5 is formed.
Adhesive layer containing no conductive particles 2 or first adhesive layer 102 containing conductive particles 2 and first non-conductive particles 31
a is too thick, which causes a disadvantage that the contact between the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board is hindered. However, the first adhesive layer 31 Since the layer thickness of 102a can be controlled stably,
Such a problem can be prevented.

The concentration of the conductive particles 2 in the first adhesive layer 102a is preferably in the range of 500,000 to 3,000,000 particles / mm ³ .
Range of 1-2 million units / mm ³ is more preferable.

The effect of the present invention is that the second adhesive layer 10
This occurs regardless of the presence or absence of conductive particles in 2b.

The shape of the bonding layer 202 after heat curing is preferably an arc shape 8 along the peripheral side of the semiconductor chip from the viewpoint of the mechanical strength described above, but the peripheral side of the semiconductor chip is bonded. The same effect is obtained if a bonding layer covering from the application film side to a predetermined portion is formed.
Here, the predetermined portion is a degree to which the effect of the present invention can be generated,
That is, 20% or more and 100% of the entire peripheral side of the semiconductor chip
The range up to.

Embodiment 3 FIG. 3 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to Embodiment 3 of the present invention. In the figure, reference numeral 112 denotes an adhesive film including a first adhesive layer and a second adhesive layer, and 1
12a is a first adhesive layer made of a resin-based adhesive containing the conductive particles 2 and the first non-conductive particles 31, and 112b is a particle having a concentration lower than the concentration of the first non-conductive particles in the first adhesive layer. A second adhesive layer 212 made of a resin-based adhesive containing the second non-conductive particles 32 having a small diameter indicates a bonding layer 212 after heat curing.

FIG. 3A is a cross-sectional view showing a state in which an adhesive film 112 is adhered on the wiring board 6, and FIG. 3B is a view in which the semiconductor chip 4 is bonded to the wiring board 6 via the bonding layer 212. FIG.

When the semiconductor chip 4 heated to about 200 ° C. is pressed, the second adhesive layer 112 b containing the second non-conductive particles 32 is liquefied and flows, and the resin-based adhesive is adhered to the periphery of the semiconductor chip 4. Discharge the agent. First non-conductive particles 31
Has a particle size of 1.5 μm and a concentration of about 50% by weight, whereas the second non-conductive particles 32 contained in the second adhesive layer 112b have a particle size of 0.5 μm and a concentration of about 20% by weight. And lower than the concentration of the first non-conductive particles 31. With such a content of the second non-conductive particles 32, the fluidity of the resin-based adhesive is not impaired, so that the resin discharged to the periphery of the semiconductor chip 4 follows the peripheral side of the semiconductor chip. It is possible to form the bonding layer 212 having the arc shape 8.

The reason why the particle size of the second non-conductive particles 32 is made smaller than the particle size of the first non-conductive particles 31 is that the smaller the particle size of the non-conductive particles, the higher the fluidity of the adhesive layer containing the same. To do that. This improvement in fluidity is caused by the fact that non-conductive particles having a smaller mass have a smaller inertial force and are less susceptible to the influence of gravity.

In the present embodiment, the same silica was used as the first and second non-conductive particle materials.
The materials of the non-conductive particles 31 and the second non-conductive particles 32 may be changed. For example, the first non-conductive particle material is alumina,
Similar effects can be obtained by using a material having a large specific gravity such as silicon nitride and using silica or the like as the second non-conductive particle material.

In the present embodiment, the first non-conductive particles 31 contained in the first adhesive layer 112a made of a resin adhesive have a particle diameter of 1.5 μm and a concentration of about 50% by weight. However, the concentration of the first non-conductive particles 31 exhibiting the effects of the present invention is preferably 40 to 70% by weight,
A range from 45 to 55% by weight is more preferred. The particle size of the first non-conductive particles 31 is preferably in the range of 1 to 5 μm, and more preferably in the range of 1 to 2 μm.

On the other hand, the second non-conductive particles 32 contained in the second adhesive layer 112b made of a resin-based adhesive have a particle diameter of 0.1.
Although a concentration of about 20% by weight at 5 μm was used, the concentration of the second non-conductive particles 32 exhibiting the effect of the present invention is preferably in the range of 10 to 30% by weight, and is preferably 15 to 25% by weight. The range is more preferable, and the particle size of the second non-conductive particles 32 is preferably in a range of 0.1 μm or more and less than 1.0 μm, and more preferably in a range of 0.3 to 0.7 μm.

When the second adhesive layer 112b contains a relatively low concentration of the second non-conductive particles 32, the thickness control of the second adhesive layer 112b becomes easier. As a result, the following effects occur. That is, the first adhesive layer 112a needs to be set to the total thickness of the electrodes 5 on the semiconductor chip side and the electrodes 7 on the wiring board.
When the height of the electrode or the thickness of the electrode 7 on the wiring board varies,
An adhesive layer containing no first or second non-conductive particles 31 and 32 may be formed near the surface of the semiconductor chip on which the electrode 5 is formed, or the first non-conductive particles 31 and the conductive particles 2 may not be formed.
The first adhesive layer 112a containing the first adhesive layer 112a is too thick to prevent the contact between the electrode 5 on the semiconductor chip side and the electrode 7 on the wiring board, but the fluidity is reduced by the inclusion of the first non-conductive particles 31. By doing so, the layer thickness of the first adhesive layer 112a can be controlled stably, so that such a problem can be prevented.

The concentration of the conductive particles 2 in the first adhesive layer 112a is preferably in the range of 500,000 to 3,000,000 particles / mm ³ .
Range of 1-2 million units / mm ³ is more preferable.

The effect of the present invention is that the second adhesive layer 11
This occurs regardless of the presence or absence of conductive particles in 2b.

As the shape of the bonding layer 212 after the heat curing, the circular shape 8 along the peripheral portion of the semiconductor chip is preferable from the viewpoint of the mechanical strength described above, but the peripheral portion of the semiconductor chip is bonded. The same effect is obtained if a bonding layer covering from the application film side to a predetermined portion is formed.
Here, the predetermined portion is a degree to which the effect of the present invention can be generated,
That is, 20% or more and 100% of the entire peripheral side of the semiconductor chip
The range up to.

Embodiment 4 FIG. 4 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to Embodiment 4 of the present invention. In the figure, reference numeral 103 denotes an adhesive film including a first adhesive layer and a second adhesive layer, and 1
03a is a first adhesive layer made of a resin-based adhesive containing non-conductive particles 3, 103b is a second adhesive layer containing no non-conductive particles made of a resin-based adhesive, 203 is a bonding layer after heat curing, Are respectively shown.

FIG. 4A shows a film 1 for bonding to a wiring board.
FIG. 4B is a cross-sectional view illustrating a state where the semiconductor chip 4 is bonded to the wiring substrate 6 via the bonding layer 203 after heat curing. The second adhesive layer 103b made of a resin-based adhesive is liquefied and flows, and is discharged to the periphery of the semiconductor chip 4, so that the joining layer 20 having the arc-shaped portion 8 along the peripheral side of the semiconductor chip 4
3 is formed.

Since the resin constituting the second adhesive layer 103b does not contain the non-conductive particles 3, the resin easily flows, and the bonding layer 203 having the arc-shaped portion 8 along the peripheral side of the semiconductor chip after heat curing is obtained. Can be After the bonding, the space between the semiconductor chip 4 and the wiring board 6 is filled with the dispersed non-conductive particles 3, so that the thermal expansion coefficient of the bonding layer 203 can be reduced. Because of these two effects, the semiconductor chip 4
As a result, the contact between the electrode 5 on the side and the electrode 7 on the wiring board 6 can be maintained at a high temperature, so that the long-term reliability of the mechanical connection between the semiconductor chip 4 and the wiring board 6 is ensured and the heat resistance is also improved. Can be improved.

More specifically, the first adhesive layer 103a contains 50% by weight of the non-conductive particles 3 of silica having a particle size of 1.5 μm so that the bonding layer 203 after heat curing has a linear expansion coefficient of 70 ppm. To 30 ppm from
The heat-resistant temperature can be increased from the conventional 150 ° C. to 220 ° C.

First adhesive layer 10 exhibiting the effect of the present invention
The concentration of the nonconductive particles 3a is 20 to 80% by weight.
Is desirable, 40 to 70% by weight is more preferable, and 45 to 55% by weight is more preferable.

In the present embodiment, a method for forming a semiconductor device by pressing a heated semiconductor chip against an adhesive film has been described. Further, as another mounting method, a method of pressing the semiconductor chip against the bonding film, applying ultrasonic vibration to the semiconductor chip, bonding the semiconductor chip to the wiring board, and curing the bonding film may be used. Similar effects can be expected.

As the shape of the bonding layer 203 after the heat curing, an arc shape 8 along the peripheral side of the semiconductor chip is preferable from the viewpoint of the mechanical strength described above, but the peripheral side of the semiconductor chip is bonded. The same effect is obtained if a bonding layer covering from the application film side to a predetermined portion is formed.
Here, the predetermined portion is a degree to which the effect of the present invention can be generated,
That is, 20% or more and 100% of the entire peripheral side of the semiconductor chip
The range up to.

Embodiment 5 FIG. 5 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to Embodiment 5 of the present invention. In the figure, reference numeral 113 denotes an adhesive film including a first adhesive layer and a second adhesive layer, and 1
13a is a first adhesive layer made of a resin adhesive containing the first non-conductive particles 31, and 113b is a second non-conductive layer having a concentration lower than the concentration of the first non-conductive particles in the first adhesive layer. A second adhesive layer 213 made of a resin-based adhesive containing the particles 32 indicates a bonding layer after heat curing.

FIG. 5A shows an adhesive film 1 on a wiring board.
FIG. 5B is a cross-sectional view showing a state where the semiconductor chip 4 is bonded to the wiring substrate 6 via the bonding layer 213 after heat curing.

Since the second non-conductive particles 32 in the resin constituting the second adhesive layer 113b have a low concentration, the second non-conductive particles 32 easily flow, and after heating and curing, the arc-shaped portions 8 along the peripheral side of the semiconductor chip are removed. Is obtained. After bonding, the space between the semiconductor chip 4 and the wiring board 6 is filled with the dispersed first and second non-conductive particles 31 and 32, so that the thermal expansion coefficient of the bonding layer 213 can be reduced. Because of these two effects, the contact between the electrode 5 on the semiconductor chip 4 side and the electrode 7 on the wiring board 6 can be maintained at a high temperature, and as a result, the long-term reliability of the mechanical connection between the semiconductor chip 4 and the wiring board 6 can be maintained. In addition to ensuring the heat resistance, the heat resistance can be further improved.

The concentration of the first non-conductive particles 31 exhibiting the effects of the present invention is preferably in the range of 40 to 70% by weight, and more preferably in the range of 45 to 55% by weight. The particle size of the first non-conductive particles 31 is preferably in the range of 1 to 5 μm, and more preferably in the range of 1 to 2 μm. on the other hand,
The concentration of the second non-conductive particles 32 exhibiting the effect of the present invention is preferably in the range of 10 to 30% by weight.
A range of 5% by weight is more preferred.

In this embodiment, the bonding film 113 is used.
A method for forming a semiconductor device by pressing a heated semiconductor chip 4 on the semiconductor device has been described. As another mounting method, the semiconductor chip 4 is attached to the bonding film 113.
A similar effect can be expected by using a method of applying ultrasonic vibration to the semiconductor chip 4 after pressing the semiconductor chip 4 to join the semiconductor chip 4 and the wiring board 6 and then curing the bonding film 113.

It is preferable that the shape of the bonding layer 213 after the heat curing is an arc shape 8 along the peripheral side of the semiconductor chip from the viewpoint of the mechanical strength described above. The same effect can be obtained if a bonding layer covering from the adhesive film side to a predetermined portion is formed. Here, the predetermined portion is a degree to which the effect of the present invention can be produced, that is, 20% or more of the entire peripheral portion of the semiconductor chip.
Refers to the range up to 0%.

Embodiment 6 FIG. 6 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to Embodiment 6 of the present invention. In the figure, reference numeral 123 denotes an adhesive film including a first adhesive layer and a second adhesive layer, and 1
23a is a first adhesive layer made of a resin-based adhesive containing the first non-conductive particles 31, and 123b is a first non-conductive layer in the first adhesive layer having a smaller particle diameter than the first non-conductive particles. A second adhesive layer 223 made of a resin-based adhesive containing the second non-conductive particles 32 at a concentration lower than the particle concentration indicates a bonding layer after heat curing.

FIG. 6A is a cross-sectional view showing a state in which the adhesive film 123 is adhered to the wiring board 6, and FIG. 6B is a view showing the state in which the semiconductor chip 4 is heated and cured via the bonding layer 223. 2 shows a cross-sectional view of a state in which they are bonded to each other. The second adhesive layer 123b made of a resin-based adhesive is liquefied and flows, and is discharged to the periphery of the semiconductor chip 4, so that the bonding layer 22 having an arc-shaped portion 8 along the peripheral side of the semiconductor chip 4
3 is formed.

The resin forming the second adhesive layer 123b is as follows.
Since the second non-conductive particles 32 having a smaller particle size than the first non-conductive particles 31 are contained at a concentration lower than the concentration of the first non-conductive particles 31 in the first adhesive layer, the second non-conductive particles 32 easily flow. Become
After the heat curing, a bonding layer 223 having an arc-shaped portion 8 along the peripheral side of the semiconductor chip is obtained. After the bonding, the space between the semiconductor chip 4 and the wiring substrate 6 is filled with the dispersed first and second non-conductive particles 31, 32, so that the bonding layer 2
23 can have a small thermal expansion coefficient. Such 2
As a result, the contact between the electrode 5 on the semiconductor chip 4 side and the electrode 7 on the wiring board 6 can be maintained at a high temperature. As a result, the long-term reliability of the mechanical connection between the semiconductor chip 4 and the wiring board 6 is improved. In addition to ensuring the heat resistance, the heat resistance can be improved.

The particle size of the first non-conductive particles 31 is 1 to 5 μm.
Is desirable, and the range of 1-2 μm is more preferable. The concentration of the first non-conductive particles 31 is preferably in the range of 40 to 70% by weight, and more preferably in the range of 45 to 55% by weight.

On the other hand, the particle size of the second non-conductive particles 32 is 0.1.
A range of 1 μm or more and less than 1.0 μm is desirable, and 0.3 to
A range of 0.7 μm is more preferable. The concentration of the second non-conductive particles 32 is preferably in the range of 10 to 30% by weight, and more preferably in the range of 15 to 25% by weight.

In the present embodiment, the non-conductive particles 3
Although the same silica is used as 1 and 32, the materials of the first non-conductive particles 31 and the second non-conductive particles 32 may be changed. For example, a similar effect can be obtained by using a material having a large specific gravity such as alumina or silicon nitride for the first non-conductive particle material and using silica or the like for the second non-conductive particle.

Specifically, the first adhesive layer 123a is
Of non-conductive particles 31 having a particle size of 1.5 μm
% By weight, the bonding layer 22 after heat curing
Since the linear expansion coefficient of No. 3 can be reduced from 70 ppm to 30 ppm, the heat resistance temperature can be improved from 150 ° C. to 220 ° C. in the related art.

In this embodiment, a method for forming a semiconductor device by pressing a heated semiconductor chip against an adhesive film has been described. Also, as another mounting method, after pressing the semiconductor chip against the adhesive film,
The same effect can be expected by using a method of applying an ultrasonic vibration to the semiconductor chip to bond the semiconductor chip and the wiring board and then curing the adhesive film.

It is preferable that the shape of the bonding layer 223 after the heat curing is an arc shape 8 along the peripheral side of the semiconductor chip from the viewpoint of the mechanical strength described above. The same effect is obtained if a bonding layer covering from the application film side to a predetermined portion is formed.
Here, the predetermined portion is a degree to which the effect of the present invention can be generated,
That is, 20% or more and 100% of the entire peripheral side of the semiconductor chip
The range up to.

Seventh Embodiment FIG. 7 is a sectional view showing a method for manufacturing a semiconductor device according to a seventh embodiment of the present invention.

In the figure, reference numeral 104 denotes an adhesive film comprising a first adhesive layer and a second adhesive layer, and 104a denotes conductive particles 2
Adhesive layer 104b containing non-conductive particles 3 and non-conductive particles 3
Denotes a second adhesive layer, 204 denotes a bonding layer after heat curing, 9 denotes a void, and 10 denotes a hot plate.

FIG. 7A is a cross-sectional view showing a state in which an adhesive film 104 is adhered on the wiring board 6, and FIG.
FIG. 7C is a cross-sectional view showing a state where the wiring board 6 is heated on the hot plate 10, FIG. 7C is a cross-sectional view showing a state where the heated semiconductor chip 4 is pressed and the bonding film 104 is cured,
Are respectively shown.

When the wiring board 6 is heated, the resin of the bonding film 104 liquefies at about 90 ° C.
The void 9 trapped between the wiring board 4 and the wiring board 6 is
Of the second adhesive layer 104a.
rise to b.

When the semiconductor chip 4 heated to about 200 ° C. is pressed against the wiring board 6, the second adhesive layer 104 b made of a resin-based adhesive containing no non-conductive particles 3 easily flows, and the second adhesive layer 104 b The void 9 is discharged around the semiconductor chip 4 at the same time when the resin-based adhesive is discharged.

When the bonding film 104 is heated to 200 ° C. by the semiconductor chip 4, curing occurs, and the bonding layer 204 is formed.
Is formed. During this heat curing, an arc-shaped portion 8 is formed in a portion of the bonding layer 204 along the peripheral side of the semiconductor chip 4.

In the above-described experiment, 90 resin was used as the resin adhesive.
An epoxy resin which becomes 200 cps at ° C. was used. Also,
The wiring board 6 to which the bonding film 104 is attached is heated at 90 ° C.
The voids 9 trapped between the adhesive film 104 and the wiring board 6 by heating the first adhesive layer 104
a, and further rises to the second adhesive layer 104b, so that the semiconductor chip 4 heated to about 200 ° C. can be pressed to eliminate the resin-based adhesive and simultaneously discharge the void 9.

[0107] The shape of the bonding layer 204 after the heat curing is preferably an arc shape 8 along the peripheral side of the semiconductor chip from the viewpoint of the mechanical strength described above, but the peripheral side of the semiconductor chip is bonded. The same effect is obtained if a bonding layer covering from the application film side to a predetermined portion is formed.
Here, the predetermined portion is a degree to which the effect of the present invention can be generated,
That is, 20% or more and 100% of the entire peripheral side of the semiconductor chip
The range up to.

[0108]

According to the semiconductor device of the present invention, a semiconductor chip having electrodes, a wiring board having electrodes, and a first adhesive layer made of a resin-based adhesive containing conductive particles and non-conductive particles are provided. An adhesive film having a second adhesive layer made of a resin-based adhesive containing no non-conductive particles, and the first adhesive layer is formed on the wiring substrate on the side where the electrodes are provided,
And a bonding layer formed by heating and curing the second adhesive layer on the side of the semiconductor chip where the electrodes are provided, so that the conductive particles can be captured even with a small electrode area. And an effect of obtaining a highly reliable semiconductor device having excellent mechanical strength.

Further, in the semiconductor device according to the present invention, the first semiconductor chip having the electrodes, the wiring board having the electrodes, and the first resin-based adhesive containing the conductive particles and the first non-conductive particles are provided. An adhesive film having an adhesive layer and a second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a lower concentration than the concentration of the first non-conductive particle in the first adhesive layer, A bonding layer formed by arranging the first adhesive layer on the side of the wiring substrate on which the electrodes are provided, and the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided, and curing by heating; , The conductive particles can be captured even with a small electrode, and the thickness of the first adhesive layer can be controlled stably because the first adhesive layer contains the first non-conductive particles. And the second adhesive layer has a concentration of non-conductive particles. A semiconductor chip peripheral side portion for the lower it is possible to stably form the bonding layer of a predetermined shape,
This is effective in obtaining a highly reliable semiconductor device having excellent mechanical strength.

Further, in the semiconductor device according to the present invention, the semiconductor chip having the electrodes, the wiring substrate having the electrodes, and the first adhesive made of the resin-based adhesive containing the conductive particles and the first non-conductive particles are provided. An adhesive layer, and a second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than that of the first non-conductive particle in the first adhesive layer and having a small particle size. Disposing the first adhesive layer on the side of the wiring substrate on which the electrodes are provided and the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided, and heat-curing the adhesive film having And a bonding layer formed by the method, so that the conductive particles can be captured even with a small electrode, and a bonding layer having a predetermined shape can be stably formed on the peripheral side of the semiconductor chip. Trust with excellent mechanical strength It is effective to obtain a semiconductor device with a high.

In the semiconductor device according to the present invention, a semiconductor chip having electrodes, a wiring board having electrodes, a first adhesive layer made of a resin-based adhesive containing nonconductive particles, and a nonconductive particle are provided. An adhesive film having a second adhesive layer made of a resin-based adhesive containing no is bonded to the first adhesive layer on the side of the wiring substrate on which the electrodes are provided, and the second adhesive layer is attached to the semiconductor chip. And a bonding layer formed by heating and curing on the side where the electrodes are provided, so that the thermal expansion coefficient of the bonding layer after bonding can be reduced, so that the semiconductor chip and the wiring substrate The long-term reliability of the mechanical connection can be maintained, and the heat resistance of the semiconductor device can be improved.

In the semiconductor device according to the present invention, a semiconductor chip having electrodes, a wiring board having electrodes, and a first adhesive layer made of a resin adhesive containing first non-conductive particles are provided. A second adhesive layer comprising a resin-based adhesive containing a second non-conductive particle at a lower concentration than the concentration of the first non-conductive particle in the first adhesive layer. A bonding layer formed by arranging the second adhesive layer on the side of the wiring substrate on which the electrode is provided and the second adhesive layer on the side of the semiconductor chip on which the electrode is provided, and curing by heating; As a result, a bonding layer of a predetermined shape can be formed stably on the periphery of the semiconductor chip, and the thermal expansion coefficient of the bonding layer after bonding can be reduced, resulting in excellent long-term reliability and improved heat resistance. The obtained semiconductor device can be easily obtained.

In the semiconductor device according to the present invention, a semiconductor chip having electrodes, a wiring board having electrodes, and a first adhesive layer made of a resin-based adhesive containing first non-conductive particles are provided. A second adhesive layer made of a resin-based adhesive containing second non-conductive particles having a lower concentration and a smaller particle size than the concentration of the first non-conductive particles in the first adhesive layer. The film was formed by arranging the first adhesive layer on the side of the wiring substrate on which the electrodes are provided and the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided and heat-curing the film. Since the bonding layer is provided, the thickness of the bonding layer can be controlled stably, and a semiconductor device having excellent long-term reliability and improved heat resistance can be easily obtained.

In the method of manufacturing a semiconductor device according to the present invention, the first adhesive layer made of a resin adhesive containing conductive particles and non-conductive particles and the resin adhesive containing no non-conductive particles are used. After the step of arranging the adhesive film including the second adhesive layer on the wiring substrate, and liquefying the adhesive film by heating, bonding the semiconductor chip to the wiring substrate and electrically connecting them, Bonding the semiconductor chip onto the wiring board through a bonding layer formed by curing the bonding film by further heating, and thus having high mechanical strength and high reliability. There is an effect that the semiconductor device can be easily manufactured.

In the film for bonding a semiconductor chip according to the present invention, a first adhesive layer made of a resin adhesive containing conductive particles and non-conductive particles and a second adhesive layer made of a resin adhesive containing no non-conductive particles are used. And an adhesive layer, so that the conductive particles can be easily captured even with a small electrode on the semiconductor chip, and when the semiconductor chip and the wiring board are bonded to each other, a predetermined portion is provided on the peripheral side of the semiconductor chip. There is an effect that a bonding layer having a shape can be formed stably.

Further, in the film for bonding a semiconductor chip according to the present invention, a first adhesive layer made of a resin-based adhesive containing conductive particles and first non-conductive particles, and a first adhesive layer in the first adhesive layer are provided. A second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than the concentration of the non-conductive particles. In addition to being able to capture, when bonding the semiconductor chip and the wiring board, there is an effect that a bonding layer having a predetermined shape can be stably formed on the periphery of the semiconductor chip.

Further, in the film for bonding a semiconductor chip according to the present invention, a first adhesive layer made of a resin-based adhesive containing conductive particles and first non-conductive particles, and a first adhesive layer in the first adhesive layer. A second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a lower concentration and a smaller particle size than the concentration of the non-conductive particles. The conductive particles can be easily captured, and the bonding layer having a predetermined shape can be stably formed on the peripheral side of the semiconductor chip when the semiconductor chip is bonded to the wiring board.

Further, in the film for bonding a semiconductor chip according to the present invention, the first adhesive layer made of a resin-based adhesive containing non-conductive particles and the second adhesive layer made of a resin-based adhesive containing no non-conductive particles are used. And an adhesive layer.
When bonding the semiconductor chip and the wiring board, a bonding layer of a predetermined shape can be easily formed stably on the peripheral side of the semiconductor chip,
In addition, there is an effect that the heat resistance is excellent.

Further, in the semiconductor chip bonding film according to the present invention, the first bonding layer made of a resin-based adhesive containing the first non-conductive particles, and the first non-conductive particles in the first bonding layer are formed. And a second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than that of the semiconductor chip. There is an effect that a bonding layer having a predetermined shape can be stably formed on the peripheral side portion and the heat resistance is excellent.

Further, in the film for bonding a semiconductor chip according to the present invention, the first adhesive layer made of the first resin-based adhesive containing the first non-conductive particles and the first adhesive layer in the first adhesive layer are formed. A second adhesive made of a resin adhesive containing second non-conductive particles having a lower concentration and a smaller particle size than the concentration of the non-conductive particles;
When bonding the semiconductor chip and the wiring board, a bonding layer of a predetermined shape can be easily formed on the bonding film side at the periphery of the semiconductor chip when bonding the semiconductor chip and the wiring board, and the heat resistance is improved. There is an effect that it is excellent.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a structure and a manufacturing method of a semiconductor device using an adhesive film according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to a third embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a structure and a manufacturing method of a semiconductor device using an adhesive film according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to a fifth embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a structure and a manufacturing method of a semiconductor device using an adhesive film according to a sixth embodiment of the present invention.

FIG. 7 is a sectional view illustrating a method for manufacturing a semiconductor device using an adhesive film according to a seventh embodiment of the present invention.

FIG. 8: Conventional adhesive film (adhesive film I)
FIG. 4 is a cross-sectional view showing a structure and a manufacturing method of a semiconductor device using the semiconductor device.

FIG. 9: Conventional adhesive film (adhesive film II)
FIG. 4 is a cross-sectional view showing a structure and a manufacturing method of a semiconductor device using the semiconductor device.

FIG. 10 shows a conventional adhesive film (adhesive film II).
It is sectional drawing which shows the structure and manufacturing method of the semiconductor device using I).

FIG. 11 is a cross-sectional view illustrating a method for manufacturing a semiconductor device using a conventional adhesive film.

FIG. 12 is a cross-sectional view of the vicinity of a peripheral side portion of a semiconductor device using a conventional adhesive film.

[Explanation of symbols]

101, 102, 103, 104, 105, 106, 1
07, 112, 113, 123 Adhesive film, 1
01a, 102a, 103a, 104a, 106a, 1
12a, 113a, 123a first adhesive layer, 101
b, 102b, 103b, 104b, 106b, 112
b, 113b, 123b Second adhesive layer, 201, 2
02, 203, 204, 205, 206, 207, 20
8, 211, 213, 223 bonding layer, 2 conductive particles, 3 non-conductive particles, 31 first non-conductive particles,
32 second non-conductive particles, 4 semiconductor chip, 5
Electrodes on the semiconductor chip, 6 wiring board, 7 electrodes on the wiring board, 8 arc-shaped portions along the peripheral side of the semiconductor chip in the heat-cured bonding layer, 9 voids,
10 hot plate, 11 a bonding layer having a convex shape at a portion away from the lower end of the semiconductor chip, 12 ultrasonic vibration.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C09J 7/00 (72) Inventor Masaaki Okada 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation F term (for reference) 4J004 AA10 AA11 AA13 AA18 AA19 AB05 BA03 FA05 4J040 DB022 DF001 EC001 EH031 HA066 HA136 HA206 HA306 JA09 JB02 KA03 KA07 KA32 LA09 NA20 PA23 PA30 4M109 AA02 BA03 CA22 EA02 EA07 EB07 EB07 EB07 EB07 RR18 5F061 AA02 BA03 CA22 CB02 CB12 CB13

Claims (17)

[Claims] 1. A semiconductor chip having electrodes, a wiring board having electrodes, a first adhesive layer made of a resin-based adhesive containing conductive particles and non-conductive particles, and a resin-based material containing no non-conductive particles. An adhesive film having a second adhesive layer made of an adhesive is attached to the first adhesive layer on the side of the wiring substrate on which the electrode is provided, and the second adhesive layer is attached to the electrode of the semiconductor chip. A bonding layer formed by arranging on the side where is provided and heating and curing. 2. A semiconductor chip provided with electrodes, a wiring board provided with electrodes, a first adhesive layer made of a resin-based adhesive containing conductive particles and first non-conductive particles, A second adhesive layer comprising a resin-based adhesive containing a second non-conductive particle having a concentration lower than the concentration of the first non-conductive particle in the adhesive layer; A bonding layer formed by arranging the second adhesive layer on the side of the wiring substrate on which the electrodes are provided, the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided, and curing by heating. A semiconductor device, comprising: 3. A semiconductor chip having electrodes, a wiring board having electrodes, a first adhesive layer made of a resin-based adhesive containing conductive particles and first non-conductive particles, A second adhesive layer comprising a resin-based adhesive containing a second non-conductive particle having a concentration lower than the concentration of the first non-conductive particle in the adhesive layer and having a small particle size; Forming the first adhesive layer on the side of the wiring substrate on which the electrodes are provided, and forming the second adhesive layer on the side of the semiconductor chip on which the electrodes are provided, and curing by heating. A semiconductor device comprising: 4. The method according to claim 1, wherein the first non-conductive particles have a particle size of 1 to 5 μm.
m, the concentration is 40 to 70% by weight, and the particle size of the second non-conductive particles is 0.1 μm or more and less than 1.0 μm, and the concentration is 10 to 30% by weight. 3
13. The semiconductor device according to claim 1. 5. The semiconductor device according to claim 1, wherein the concentration of the conductive particles contained in the first adhesive layer is 500,000 to 3,000,000 particles / mm ^3. . 6. A semiconductor chip having electrodes, a wiring board having electrodes, a first adhesive layer made of a resin adhesive containing non-conductive particles, and a resin adhesive containing no non-conductive particles. An adhesive film having a second adhesive layer, the first adhesive layer being provided on the side of the wiring substrate on which an electrode is provided, and the second adhesive layer being provided with an electrode of the semiconductor chip. And a bonding layer formed by heat-curing by arranging on the side of the semiconductor device. 7. A semiconductor chip having electrodes, a wiring board having electrodes, a first adhesive layer made of a resin-based adhesive containing first non-conductive particles, and a first adhesive layer. A second concentration lower than the concentration of the first non-conductive particles;
An adhesive film having a second adhesive layer made of a resin-based adhesive containing non-conductive particles is attached to the first adhesive layer on the side of the wiring board on which the electrode is provided, by the second adhesive layer.
A bonding layer formed by heating and curing an adhesive film disposed on the side of the semiconductor chip where the electrodes are provided. 8. The concentration of the first non-conductive particles is 40 to 70.
% By weight, and the concentration of the second non-conductive particles is 10 to 2%.
8. The semiconductor device according to claim 7, wherein the content is 0% by weight. 9. A semiconductor chip having electrodes, a wiring board having electrodes, a first adhesive layer made of a resin adhesive containing first non-conductive particles, and a first adhesive layer. A second adhesive layer comprising a resin-based adhesive containing a second non-conductive particle having a lower concentration and a smaller particle size than the concentration of the first non-conductive particle; The second adhesive layer is formed by heating and curing an adhesive film disposed on the side of the wiring substrate on which the electrodes are provided, and the adhesive film disposed on the side of the semiconductor chip on which the electrodes are provided. A semiconductor device comprising: 10. The particle size of the first non-conductive particles is 1 to 5 μm.
m, the concentration is 40 to 70% by weight, the particle size of the second non-conductive particles is 0.1 μm or more and less than 1.0 μm, and the concentration is 1 μm.
10. The semiconductor device according to claim 9, wherein the content is 0 to 30% by weight. 11. An adhesive film comprising: a first adhesive layer made of a resin-based adhesive containing conductive particles and non-conductive particles; and a second adhesive layer made of a resin-based adhesive containing no non-conductive particles. Disposing the adhesive film on a wiring board by heating and liquefying the adhesive film by heating, bonding the semiconductor chip to the wiring substrate and electrically connecting them, and then curing the adhesive film by further heating Bonding the semiconductor chip to the wiring substrate via a bonding layer formed by the bonding. 12. A semiconductor device comprising: a first adhesive layer made of a resin-based adhesive containing conductive particles and non-conductive particles; and a second adhesive layer made of a resin-based adhesive containing no non-conductive particles. A film for bonding semiconductor chips, characterized in that: 13. A first adhesive layer comprising a resin-based adhesive containing conductive particles and first non-conductive particles;
A second adhesive layer made of a resin-based adhesive containing a second non-conductive particle having a concentration lower than the concentration of the first non-conductive particle in the first adhesive layer. For film. 14. A first adhesive layer comprising a resin-based adhesive containing conductive particles and first non-conductive particles;
A second adhesive layer made of a resin-based adhesive containing second non-conductive particles having a lower concentration and a smaller particle size than the concentration of the first non-conductive particles in the first adhesive layer. Semiconductor chip bonding film. 15. A semiconductor device comprising: a first adhesive layer made of a resin-based adhesive containing non-conductive particles; and a second adhesive layer made of a resin-based adhesive containing no non-conductive particles. Semiconductor chip bonding film. 16. A first adhesive layer comprising a resin-based adhesive containing first non-conductive particles, and a second adhesive layer having a concentration lower than a concentration of the first non-conductive particles in the first adhesive layer. And a second adhesive layer made of a resin adhesive containing non-conductive particles. 17. A first adhesive layer comprising a first resin-based adhesive containing first non-conductive particles, and a first adhesive layer having a lower concentration than the concentration of the first non-conductive particles in the first adhesive layer. And a second adhesive layer made of a resin adhesive containing second non-conductive particles having a small particle size.