JP2002050606A - 基板用リンス液及び基板処理方法 - Google Patents
基板用リンス液及び基板処理方法Info
- Publication number
- JP2002050606A JP2002050606A JP2000233252A JP2000233252A JP2002050606A JP 2002050606 A JP2002050606 A JP 2002050606A JP 2000233252 A JP2000233252 A JP 2000233252A JP 2000233252 A JP2000233252 A JP 2000233252A JP 2002050606 A JP2002050606 A JP 2002050606A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ultrapure water
- polishing
- chelating agent
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 239000007788 liquid Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 65
- 239000012498 ultrapure water Substances 0.000 claims abstract description 65
- 239000002738 chelating agent Substances 0.000 claims abstract description 41
- 239000002253 acid Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 28
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims description 43
- 238000005498 polishing Methods 0.000 claims description 40
- 238000011109 contamination Methods 0.000 claims description 30
- 238000003672 processing method Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 34
- 239000002184 metal Substances 0.000 abstract description 34
- 238000005406 washing Methods 0.000 abstract description 5
- 239000000356 contaminant Substances 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 3
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 40
- 229910052802 copper Inorganic materials 0.000 description 40
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000008237 rinsing water Substances 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004445 quantitative analysis Methods 0.000 description 5
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- -1 alkali metal salts Chemical class 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 239000012487 rinsing solution Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Detergent Compositions (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000233252A JP2002050606A (ja) | 2000-08-01 | 2000-08-01 | 基板用リンス液及び基板処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000233252A JP2002050606A (ja) | 2000-08-01 | 2000-08-01 | 基板用リンス液及び基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002050606A true JP2002050606A (ja) | 2002-02-15 |
| JP2002050606A5 JP2002050606A5 (enrdf_load_stackoverflow) | 2005-08-11 |
Family
ID=18725797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000233252A Pending JP2002050606A (ja) | 2000-08-01 | 2000-08-01 | 基板用リンス液及び基板処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002050606A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051101A (ja) * | 2003-07-30 | 2005-02-24 | Ses Co Ltd | 基板の洗浄方法 |
| WO2006106677A1 (ja) | 2005-03-30 | 2006-10-12 | National Printing Bureau, Incorporated Administrative Agency | 印刷物、該印刷物の検知方法及び検知装置、並びに認証方法及び認証装置 |
| US9136104B2 (en) | 2010-11-15 | 2015-09-15 | Kurita Water Industries Ltd. | Method for cleaning silicon wafer and apparatus for cleaning silicon wafer |
| JP2015213196A (ja) * | 2012-10-19 | 2015-11-26 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | シャロートレンチアイソレーション（ｓｔｉ）用の化学機械研磨（ｃｍｐ）組成物、及びその製造方法 |
-
2000
- 2000-08-01 JP JP2000233252A patent/JP2002050606A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051101A (ja) * | 2003-07-30 | 2005-02-24 | Ses Co Ltd | 基板の洗浄方法 |
| WO2006106677A1 (ja) | 2005-03-30 | 2006-10-12 | National Printing Bureau, Incorporated Administrative Agency | 印刷物、該印刷物の検知方法及び検知装置、並びに認証方法及び認証装置 |
| US9136104B2 (en) | 2010-11-15 | 2015-09-15 | Kurita Water Industries Ltd. | Method for cleaning silicon wafer and apparatus for cleaning silicon wafer |
| JP2015213196A (ja) * | 2012-10-19 | 2015-11-26 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | シャロートレンチアイソレーション（ｓｔｉ）用の化学機械研磨（ｃｍｐ）組成物、及びその製造方法 |
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