JP2002043497A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2002043497A JP2002043497A JP2000227077A JP2000227077A JP2002043497A JP 2002043497 A JP2002043497 A JP 2002043497A JP 2000227077 A JP2000227077 A JP 2000227077A JP 2000227077 A JP2000227077 A JP 2000227077A JP 2002043497 A JP2002043497 A JP 2002043497A
- Authority
- JP
- Japan
- Prior art keywords
- suspension lead
- inner suspension
- semiconductor device
- corner
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、リードフレームを
有する半導体装置に関し、より具体的には、補強フレー
ムのコーナー付近に樹脂剥離防止孔を設けた半導体装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a lead frame, and more particularly, to a semiconductor device having a resin separation preventing hole near a corner of a reinforcing frame.
【0002】[0002]
【従来の技術】樹脂封止型半導体装置において、樹脂封
止の成形性向上および品質向上を目的として額縁状のフ
レームにより補強をする構造が提案された(特開平11
−284121号公報)。この構造は、図9に示すよう
に、ダムバー105のコーナー部105aとダイパッド
103との間に延在する吊りリード107,108と、
その吊りリードを中間部において補強する補強フレーム
104がダムバー105に平行に額縁状に配置されてい
る。補強フレーム104は、吊りリード107,108
の中間部において、交差部101を形成している。ダイ
パッド上に搭載される半導体チップ(図示せず)は、ダ
イパッド103よりも大きく、補強フレーム104を越
えてダムバー105に到達するくらいの大きさを有す
る。この補強フレーム104により、ダイボンド工程、
ワイヤボンド工程およびモールド工程において変形を少
なくすることができる。2. Description of the Related Art In a resin-sealed semiconductor device, there has been proposed a structure in which a frame-shaped frame is used for reinforcement in order to improve moldability and quality of resin sealing (Japanese Unexamined Patent Publication No. Hei 11-1999).
-284121). This structure includes, as shown in FIG. 9, suspension leads 107 and 108 extending between a corner 105 a of the dam bar 105 and the die pad 103,
A reinforcing frame 104 for reinforcing the suspension lead at an intermediate portion is arranged in a frame shape in parallel with the dam bar 105. The reinforcement frame 104 includes suspension leads 107 and 108.
The intersection 101 is formed in the middle part of the cross section. A semiconductor chip (not shown) mounted on the die pad is larger than the die pad 103 and large enough to reach the dam bar 105 beyond the reinforcing frame 104. With this reinforcing frame 104, a die bonding process,
Deformation can be reduced in the wire bonding step and the molding step.
【0003】また、上記額縁状の補強フレーム104を
設けたリードフレームにおいては、図10および図11
に示すように、補強フレームと内側吊りリード107と
の交差部101に、封止樹脂の剥離を防止するために樹
脂剥離防止孔106を設けるのが普通である。この樹脂
剥離防止孔106の部分で、リードフレームの表側と裏
側との樹脂が一体化され、樹脂強度が向上される。In a lead frame provided with the frame-shaped reinforcing frame 104, FIGS.
As shown in (1), it is common to provide a resin peeling prevention hole 106 at the intersection 101 between the reinforcing frame and the inner suspension lead 107 in order to prevent the peeling of the sealing resin. The resin on the front side and the back side of the lead frame are integrated at the resin peeling prevention hole 106, and the resin strength is improved.
【0004】また、この樹脂剥離防止孔は、半導体チッ
プが補強フレームを覆うために、半導体チップと補強フ
レームとの間の隙間が狭い場合、未注入の箇所を生じな
いように、樹脂剥離防止孔からも樹脂が注入される作用
を有する。半導体チップと補強フレーム104のコーナ
ー部との隙間は20μm程度であり、このような狭い隙
間からでは、樹脂は周縁部から0.3mm程度しか内側
に入り込まない。このため、周縁部から奥深い位置で
は、樹脂が行き渡らず、未注入領域となる。樹脂の未注
入個所が発生すると、吸湿クラック耐性が低下して未注
入領域を起点にして剥離やクラックが発生する。さら
に、未注入領域が大きい場合には、チップが局所的な力
で支えられるので、チップ割れがモールド工程後に発生
する。上記の樹脂剥離防止孔は、図10や図11に示す
形状および配置により、その周縁部から樹脂が注入され
るので、上記トラブルの原因となる樹脂の未注入領域発
生を防止する作用を有している。[0004] Further, since the semiconductor chip covers the reinforcing frame, when the gap between the semiconductor chip and the reinforcing frame is narrow, the resin peeling preventing hole is formed so as not to generate an uninjected portion. Has the effect of injecting resin. The gap between the semiconductor chip and the corner of the reinforcing frame 104 is about 20 μm, and from such a narrow gap, the resin enters only about 0.3 mm from the periphery. For this reason, at a position deep from the peripheral portion, the resin does not spread and becomes an uninjected region. When a portion where resin is not injected occurs, the resistance to moisture-absorbing cracks is reduced, and peeling and cracks occur starting from the non-injected region. Furthermore, when the uninjected area is large, the chip is supported by a local force, so that chip cracking occurs after the molding process. The above-mentioned resin peeling prevention hole has a function of preventing the occurrence of a resin non-injection region which causes the above-described trouble, because the resin is injected from the peripheral portion by the shape and arrangement shown in FIGS. 10 and 11. ing.
【0005】この結果、ダイボンド工程、ワイヤボンド
工程およびモールド工程において変形を少なくし、封止
樹脂の剥離が生じにくく、かつ未注入領域のない高品質
および高信頼性の半導体装置を提供することができる。As a result, it is possible to provide a high-quality and high-reliability semiconductor device in which the deformation is reduced in the die bonding step, the wire bonding step, and the molding step, the sealing resin is hardly peeled off, and there is no uninjected region. it can.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、上記樹
脂剥離防止孔を設けた補強フレーム付きのリードフレー
ムには、ダイボンド、ワイヤボンドおよびモールド工程
を経た結果、折れ曲がり変形が発生することが判明し
た。すなわち、図12および図13に示すように、樹脂
剥離防止孔106の付近の内側吊りリード107の根元
部に折れ曲りが発生する。この変形は、図13に示す線
Lに沿って折れ曲り、図12に示すように、ダイパッド
103および半導体チップ101を面外にシフトさせる
折れ曲がり変形である。アセンブリ工程を構成する上記
の工程では、程度の差はあるが、いずれの工程でも、上
記の折れ曲がり変形が生じる。なかでも、モールド工程
におけるシフトがもっとも大きい。ダイボンド工程での
シフト量を1とすると、ワイヤボンド工程では5、モー
ルド工程では20くらいの比率となる。However, it has been found that the lead frame with the reinforcing frame provided with the resin separation preventing hole undergoes a bending deformation as a result of a die bonding, a wire bonding and a molding process. That is, as shown in FIGS. 12 and 13, bending occurs at the root of the inner suspension lead 107 near the resin peeling prevention hole 106. This deformation is bending along the line L shown in FIG. 13, and bending the die pad 103 and the semiconductor chip 101 out of the plane as shown in FIG. In the above-mentioned steps constituting the assembling step, the above-mentioned bending deformation occurs in any of the steps, although the degree varies. Among them, the shift in the molding process is the largest. Assuming that the shift amount in the die bonding step is 1, the ratio is 5 in the wire bonding step and about 20 in the molding step.
【0007】上記の局所的な変形は、補強フレーム10
4によって補強されたリードフレームのなかにあって、
樹脂剥離防止孔106を設けた部分は局所的に強度が低
下するので、その部分に変形(ひずみ)が集中するため
である。すなわち、樹脂剥離防止孔106付近以外の部
分は、補強フレーム104によって補強され、剛性や強
度が向上するので変形(ひずみ)が生じにくくなってい
る。これに対して、樹脂剥離防止孔106の部分は、剛
性や強度が低下しているので、全体にかかる応力は従来
と同じであっても、他の部分にはひずみは生じずに、強
度低下した部分に集中してひずみが大きくあらわれ、上
記折れ曲り変形が発生する。The above-mentioned local deformation is caused by the reinforcing frame 10
In the lead frame reinforced by 4,
This is because the strength at the portion where the resin peeling prevention hole 106 is provided is locally reduced, and the deformation (strain) is concentrated at that portion. That is, portions other than the vicinity of the resin peeling prevention holes 106 are reinforced by the reinforcing frame 104, and rigidity and strength are improved, so that deformation (strain) is less likely to occur. On the other hand, since the rigidity and strength of the portion of the resin peeling prevention hole 106 are reduced, the stress applied to the whole is the same as before, but the other portions are not distorted and the strength is reduced. The strain is greatly concentrated on the portion where the bending occurs, and the bending deformation occurs.
【0008】この樹脂剥離防止孔は、樹脂封止型半導体
装置における封止樹脂の耐久性を高めるために不可欠の
ものである。このため、樹脂剥離防止孔を設けて封止樹
脂の耐久性を向上させ、かつ、樹脂の未注入個所を発生
させないようにした上で、樹脂剥離防止孔の部分に局所
的に変形が集中しないリードフレームを有する半導体装
置の開発が望まれている。The resin peeling prevention hole is indispensable for enhancing the durability of the sealing resin in the resin-sealed semiconductor device. For this reason, the resin peel prevention hole is provided to improve the durability of the sealing resin, and also to prevent the occurrence of a portion where the resin is not injected, and the deformation is not locally concentrated on the resin peel prevention hole portion. Development of a semiconductor device having a lead frame is desired.
【0009】そこで、本発明は、樹脂剥離と未注入個所
発生とを防止する樹脂剥離防止孔の付近に変形が集中し
にくいリードフレームを備えた半導体装置を提供するこ
とを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device having a lead frame in which deformation hardly concentrates near a resin peeling prevention hole for preventing resin peeling and occurrence of uninjected portions.
【0010】[0010]
【課題を解決するための手段】本発明の半導体装置は、
半導体チップと、その半導体チップを搭載するリードフ
レームとを備えた半導体装置である。リードフレーム
は、補強フレームと、補強フレームに囲まれた半導体チ
ップの搭載部であるダイパッドと、当該ダイパッドと補
強フレームのコーナー部との間に延在する内側吊りリー
ドとを備えている。このリードフレームでは、補強フレ
ームと内側吊りリードとの交差部に、樹脂剥離防止孔が
設けられ、樹脂剥離防止孔は、上記交差部から延びる内
側吊りリードの両側部に補強フレームが連続する点であ
る第1および第2の内側吊りリード根元境界点を結ぶ線
よりも、ダイパッドと反対側の領域の交差部に位置する
(請求項1)。According to the present invention, there is provided a semiconductor device comprising:
This is a semiconductor device including a semiconductor chip and a lead frame on which the semiconductor chip is mounted. The lead frame includes a reinforcing frame, a die pad which is a mounting portion of the semiconductor chip surrounded by the reinforcing frame, and an inner suspension lead extending between the die pad and a corner of the reinforcing frame. In this lead frame, a resin peeling prevention hole is provided at the intersection of the reinforcing frame and the inner suspension lead, and the resin separation prevention hole is provided at a point where the reinforcement frame is continuous with both side portions of the inner suspension lead extending from the intersection. It is located at the intersection of the area on the opposite side of the die pad from the line connecting the first and second inner suspension lead root boundary points (claim 1).
【0011】樹脂剥離防止孔を上記の範囲に限定するこ
とにより、一定幅の内側吊りリードの部分に、上記樹脂
剥離防止孔の孔部分が位置することがなくなる。すなわ
ち、この孔部分によって除かれた残りの細い幅の内側吊
りリードの部分で負荷を支えることがなくなる。換言す
れば、樹脂剥離防止孔は、交差部の部分によってその周
囲を囲まれ、内側吊りリードの側部によって囲まれる部
分がない。この結果、交差部における内側吊りリードに
ひずみが集中する度合いが軽減され、またはひずみ集中
がなくなり、樹脂剥離防止孔の付近での折れ曲りが解消
される。この結果、樹脂剥離と未注入個所発生とを防止
したうえで、リードフレームが変形しダイパッドが面外
にシフトする事態を防ぐことができる。なお、上記の境
界点は、ダイパッド側から見て、内側吊りリードが幅方
向に広がり始める点をさす。By limiting the resin peeling prevention hole to the above range, the hole portion of the resin peeling prevention hole is not located at the inside suspension lead portion having a fixed width. That is, the load is not supported by the portion of the inner suspension lead having a small width which is removed by the hole. In other words, the resin peeling prevention hole is surrounded by the intersection portion, and there is no portion surrounded by the side portion of the inner suspension lead. As a result, the degree of concentration of the strain on the inner suspension lead at the intersection is reduced, or the concentration of the strain is eliminated, and the bending near the resin separation preventing hole is eliminated. As a result, it is possible to prevent a situation in which the lead frame is deformed and the die pad is shifted out of the plane, while preventing resin peeling and occurrence of uninjected portions. The above-mentioned boundary point refers to a point at which the inner suspension lead starts to spread in the width direction when viewed from the die pad side.
【0012】上記本発明の半導体装置では、交差部にお
いて、補強フレームと内側吊りリードとを楔状に分断し
ているリードフレームの空隙部であるキャビティを埋め
るように、補強フレームと当該内側吊りリードとの間に
延在するコーナー補強部が設けられている(請求項
2)。In the semiconductor device of the present invention, the reinforcing frame and the inner suspension lead are so formed as to fill a cavity which is a void of the lead frame dividing the reinforcing frame and the inner suspension lead in a wedge shape at the intersection. A corner reinforcing portion extending between the two is provided (claim 2).
【0013】上記の構成により、交差部に連続する内側
吊りリードの部分の幅は実質的に拡大され、樹脂剥離防
止孔をよりダイパッド側に近づけて形成しても、十分な
強度を確保することができる。この結果、樹脂剥離防止
または樹脂未注入領域発生防止のためにより大きな樹脂
剥離防止孔を開口しても、十分な耐久性を有し、折れ曲
がり等を生じることがない。According to the above configuration, the width of the portion of the inner suspension lead that is continuous with the intersection is substantially increased, and sufficient strength can be ensured even when the resin separation preventing hole is formed closer to the die pad side. Can be. As a result, even if a larger resin-peeling prevention hole is opened to prevent resin-peeling or to prevent generation of a resin-uninjected region, it has sufficient durability and does not bend.
【0014】上記本発明の半導体装置では、コーナー補
強部は、交差部から延びる内側吊りリードの両側部に設
けられ、第1および第2の内側吊りリード根元境界点
は、内側吊りリードにコーナー補強部が連続する境界点
である(請求項3)。In the semiconductor device of the present invention, the corner reinforcing portions are provided on both side portions of the inner suspension lead extending from the intersection, and the first and second inner suspension lead root boundary points are provided at the inner suspension leads with corner reinforcement. The part is a continuous boundary point (claim 3).
【0015】コーナー補強部を設けることにより内側吊
りリードの根元部は補強されるので、上記樹脂剥離防止
孔の範囲を拡大することができる。この拡大された範囲
の限界は、コーナー補強部が内側吊りリードに連続する
2つの境界点を結ぶ線となる。このため、樹脂剥離防止
孔を大きくして、樹脂剥離を防止し、かつ樹脂未注入領
域の発生を防止することが可能となる。また、補強フレ
ームと内側吊りリードとがコーナー補強部により一体化
された部分が増大し、内側吊りリードへのひずみ集中を
より確実に防止できるだけでなく、リードフレーム全体
の強度、剛性を向上させることができる。By providing the corner reinforcing portion, the root portion of the inner suspension lead is reinforced, so that the range of the resin separation preventing hole can be expanded. The limit of this expanded range is the line connecting the two boundary points where the corner reinforcement is continuous with the inner suspension lead. For this reason, it is possible to increase the size of the resin separation preventing hole, prevent the resin separation, and prevent the occurrence of the resin non-injection region. In addition, the portion where the reinforcement frame and the inner suspension lead are integrated by the corner reinforcement portion increases, so that not only the concentration of strain on the inner suspension lead can be more reliably prevented, but also the strength and rigidity of the entire lead frame are improved. Can be.
【0016】上記本発明の半導体装置では、コーナー補
強部は、交差部から延びる内側吊りリードの片側に設け
られ、第1の内側吊りリード根元境界点は、補強フレー
ムが連続する境界点であり、第2の内側吊りリード根元
境界点は、コーナー補強部が連続する境界点である(請
求項4)。In the semiconductor device of the present invention, the corner reinforcing portion is provided on one side of the inner suspension lead extending from the intersection, and the first inner suspension lead root boundary point is a boundary point where the reinforcing frame is continuous. The second inner suspension lead root boundary point is a boundary point where the corner reinforcing portions are continuous (claim 4).
【0017】コーナー補強部の強度補強の効果は大き
く、内側吊りリード根元部の片側に補強フレームと連続
して一体的に設けた場合でも、十分その目的を達成する
ことができる。補強フレームのコーナー部は4つある
が、その4つのコーナー部において、内側吊りフレーム
の同じ側、例えば右側にそろえてコーナー補強部を設け
てもよいし、そうでなくてもよい。また、コーナー補強
部は片側にのみ設けるので、重量増は両側に設ける場合
に比べて小さい。この構成により、重量増を抑制した上
で、樹脂剥離を防止し、内側吊りリード根元部での折れ
曲がりを解消することができる。The effect of reinforcing the strength of the corner reinforcing portion is great, and even if it is provided integrally with the reinforcing frame on one side of the base portion of the inner suspension lead, the purpose can be sufficiently achieved. There are four corner portions of the reinforcing frame, and at the four corner portions, corner reinforcing portions may be provided on the same side of the inner suspension frame, for example, on the right side, or may not be provided. Further, since the corner reinforcing portion is provided only on one side, the increase in weight is smaller than in the case where it is provided on both sides. With this configuration, it is possible to prevent the resin from peeling off while suppressing an increase in weight, and to eliminate bending at the root portion of the inner suspension lead.
【0018】上記本発明の半導体装置では、コーナー補
強部は、リードフレームの空隙部であるキャビティ側に
凹の曲率半径を有する(請求項5)。In the semiconductor device according to the present invention, the corner reinforcing portion has a concave radius of curvature on the cavity side, which is a void portion of the lead frame.
【0019】上記のように曲率半径、すなわちアールを
設けることにより、内側吊りリードにコーナー補強部が
連続する箇所および補強フレームにコーナー補強部が連
続する内側吊りリード根元境界点付近では、ともに滑ら
かな弧の一部となる。このため、例えば、内側吊りリー
ドと補強フレームとの間を広げるような応力がかかって
も、応力集中度を低下させるので、上記箇所が起点とな
って破壊が発生することは生じにくくなる。By providing the radius of curvature, that is, the radius, as described above, both the portion where the corner reinforcement portion is continuous with the inner suspension lead and the vicinity of the base boundary point of the inner suspension lead where the corner reinforcement portion is continuous with the reinforcement frame are both smooth. Become part of the arc. For this reason, for example, even if a stress that spreads the space between the inner suspension lead and the reinforcing frame is applied, the degree of stress concentration is reduced, and it is unlikely that the above-described location will be a starting point and breakage will occur.
【0020】上記本発明の半導体装置では、コーナー補
強部は、内側吊りリードが延びる方向に直交する方向に
面取りをする面取り部から構成される(請求項6)。In the semiconductor device according to the present invention, the corner reinforcing portion is formed by a chamfered portion which is chamfered in a direction perpendicular to a direction in which the inner suspension lead extends.
【0021】上記の構成により、打ち抜き加工のプレス
型などを容易に製造することができる。With the above structure, a stamping die or the like can be easily manufactured.
【0022】上記本発明の半導体装置では、コーナー補
強部を含む交差部のすべての部分が、補強フレーム、内
側吊りリード、コーナー補強部および樹脂剥離防止孔の
それぞれの周縁部から所定幅内側位置までの範囲内に位
置するように設けられている(請求項7)。In the above-described semiconductor device of the present invention, all of the intersections including the corner reinforcing portions extend from the respective peripheral portions of the reinforcing frame, the inner suspension leads, the corner reinforcing portions, and the resin peeling prevention holes to a position inside the predetermined width. (Claim 7).
【0023】樹脂注入において樹脂が到達する奥行き到
達位置は、半導体チップと補強フレームとの間の隙間、
および樹脂注入装置の能力に依存して変動する。このた
め、上記の所定幅も上記奥行き到達位置の変動に応じて
変える。通常は、上記隙間は20μm程度であり、この
奥行き到達位置は、0.3mm程度である。The depth reaching position where the resin reaches during the resin injection is determined by the gap between the semiconductor chip and the reinforcing frame,
And the capacity of the resin injection device. For this reason, the above-mentioned predetermined width is also changed according to the fluctuation of the above-mentioned depth reaching position. Usually, the gap is about 20 μm, and the depth reaching position is about 0.3 mm.
【0024】上記の構成により、半導体チップが補強フ
レームを覆いダムバーにかかる程度にまで大きい構成と
しても、リードフレームの全領域において、樹脂の未注
入領域を発生させることがない。このため、樹脂剥離、
吸湿クラック耐性低下およびモールド後の半導体チップ
割れを防止して、高品質、高信頼性の半導体装置を提供
することが可能となる。According to the above configuration, even when the semiconductor chip covers the reinforcing frame and is large enough to cover the dam bar, no resin-injected region is generated in the entire region of the lead frame. For this reason, resin peeling,
It is possible to provide a high-quality and high-reliability semiconductor device by preventing deterioration of moisture absorption crack resistance and cracking of a semiconductor chip after molding.
【0025】上記の所定幅の値は、通常の樹脂注入装置
に対して、0.3mm程度とするのが望ましい(請求項
8)。It is desirable that the value of the predetermined width is about 0.3 mm with respect to a normal resin injection device.
【0026】樹脂剥離防止孔、内側吊りリード、補強フ
レーム、コーナー補強部の縁から0.3mmまでの範囲
内に、このコーナー部付近の領域がすべて入れば、この
範囲内は、通常の樹脂注入装置を用いて、未注入領域な
しに樹脂で封止することが可能となる。If all the area near the corner portion is within 0.3 mm from the edge of the resin peeling prevention hole, the inner suspension lead, the reinforcing frame, and the corner reinforcing portion, the normal resin injection Using the device, it is possible to seal with resin without any uninjected area.
【0027】上記本発明の半導体装置では、樹脂剥離防
止孔は、内側吊りリードが延びる方向にその長手方向を
沿わせている(請求項9)。In the semiconductor device according to the present invention, the resin peeling prevention hole extends along the longitudinal direction in the direction in which the inner suspension lead extends.
【0028】樹脂剥離防止孔が内側吊りリードが大きく
なり、内側吊りリードを横断すれば、内側吊りリードは
切断されることになる。このため、樹脂剥離防止孔は、
内側吊りリードにさしかかる部分では、その内側吊りリ
ードの幅に対する比率が小さいほうが望ましい。一方、
樹脂剥離防止孔の目的を果たすためには、この樹脂剥離
防止孔は所定の面積が必要である。上記両方の目的を満
たす一つの妥協点が、内側吊りリード根元部が延びる方
向に長い形状を有する樹脂剥離防止孔である。この結
果、内側吊りリード根元部における強度低下を小さく抑
えたうえで、樹脂剥離防止の目的を満たすことができ
る。When the resin suspending hole has a large inner suspension lead and crosses the inner suspension lead, the inner suspension lead is cut off. For this reason, the resin peel prevention holes are
It is desirable that the ratio of the width of the inner suspension lead to the inner suspension lead be small. on the other hand,
In order to fulfill the purpose of the resin separation preventing hole, the resin separation preventing hole needs to have a predetermined area. One compromise that satisfies both of the above objectives is a resin exfoliation prevention hole having a shape that is long in the direction in which the inner suspension lead root extends. As a result, it is possible to satisfy the purpose of preventing resin peeling while suppressing a decrease in strength at the root portion of the inner suspension lead.
【0029】上記本発明の半導体装置では、樹脂剥離防
止孔は、コーナー補強部および補強フレームの縁から所
定幅内側位置までそれぞれの範囲を画定したとき、いず
れの範囲内にも含まれない範囲の領域に向かって突き出
している孔周縁部を有する(請求項10)。In the semiconductor device of the present invention, when the resin separation preventing hole defines each range from the edge of the corner reinforcing portion and the edge of the reinforcing frame to a position inside the predetermined width, the hole is not included in any range. It has a hole periphery projecting toward the area (claim 10).
【0030】上記の孔周縁部から注入される樹脂は、コ
ーナー補強部や補強フレーム等の縁から注入された樹脂
が到達していない領域に到達しやすい。したがって、コ
ーナー補強部を設けたことに起因して樹脂の未注入領域
を発生させることがなくなる。この結果、内側吊りリー
ド根元部の折れ曲りの防止を含めて、リードフレーム全
体の強度を向上させたうえで、樹脂剥離の防止および樹
脂未注入領域の発生防止を達成することが可能となる。The resin injected from the peripheral edge of the hole easily reaches a region where the resin injected from the edge such as the corner reinforcing portion or the reinforcing frame does not reach. Therefore, it is not necessary to generate a resin non-injected region due to the provision of the corner reinforcing portion. As a result, it is possible to improve the strength of the entire lead frame, including the prevention of bending of the inner suspension lead base, and to prevent the resin from peeling and prevent the resin non-injection region from being generated.
【0031】上記本発明の半導体装置では、樹脂剥離防
止孔は、内側吊りリード根元境界点と外側吊りリードの
上部境界点とを結ぶ線の中点を含むように突き出してい
る孔周縁部を有する(請求項11)。In the above-described semiconductor device of the present invention, the resin peeling prevention hole has a hole peripheral portion protruding so as to include a midpoint of a line connecting the inner suspension lead root boundary point and the outer suspension lead upper boundary point. (Claim 11).
【0032】上記中点は、内側と外側の吊りリードの同
じ側辺がわの境界点どうしを結ぶ線の中点である。(吊
りリードの異なる側辺がわの境界点を結ぶ線の中点は、
通常の形状の樹脂剥離防止孔のなかに自ずと含まれ
る。)補強フレームのコーナー中央部から見て、上記の
中点に向かう方向は、コーナー補強部および補強フレー
ムの縁から所定幅内側位置までそれぞれの範囲を画定し
たとき、いずれの範囲内にも含まれない個所の方向に略
一致している。したがって、この中点を含むように中点
方向に向かって突き出す孔周縁部を有する樹脂剥離防止
孔を設ければ、上記のように突き出している孔周縁部か
ら樹脂が上記未注入となりやすい領域に行き渡りやす
い。このため、上記要件を満たす樹脂剥離防止孔の形状
によって、樹脂の未注入領域発生を防止することができ
る。上記の要件を満たす樹脂剥離防止孔の形状は、補強
フレームのコーナー中央部から見て、角部が当該中点の
方向に突き出してる3角形、4角形その他の多角形の場
合がある。このような樹脂防止剥離孔は、通常、当該中
点を孔の範囲内に含んでいる。The above-mentioned middle point is a middle point of a line connecting the same side of the inner and outer suspension leads to each other. (The middle point of the line connecting the different sides of the suspension lead
It is naturally included in the resin-peeling prevention hole having a normal shape. When viewed from the center of the corner of the reinforcing frame, the direction toward the above-mentioned midpoint is included in any of the ranges when the respective ranges are defined from the corner reinforcing portion and the edge of the reinforcing frame to a position inside the predetermined width. There is almost coincidence in the direction of no place. Therefore, if a resin peeling prevention hole having a hole peripheral portion protruding toward the midpoint direction is provided so as to include the midpoint, the resin is likely to be uninjected from the hole peripheral portion protruding as described above. Easy to go around. For this reason, it is possible to prevent the resin non-injection region from being generated by the shape of the resin peeling prevention hole satisfying the above requirements. The shape of the resin peeling prevention hole that satisfies the above requirements may be a triangular shape, a quadrangular shape, or another polygonal shape with the corner protruding in the direction of the midpoint when viewed from the center of the corner of the reinforcing frame. Such a resin prevention peeling hole usually includes the midpoint within the range of the hole.
【0033】[0033]
【発明の実施の形態】次に、図面を用いて本発明の実施
の形態について説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【0034】(実施の形態1)図1は、実施の形態1に
おける半導体装置を説明する図面である。半導体チップ
20はリードフレームのダイパッド3の上にダイボンド
剤3aを介して搭載される。ダイパッド3から外側に内
側吊りリード7および外側吊りリードが延び、両者の間
に補強フレーム4が配置されている。外側吊りリードに
連続してインナリード18、ダムバー5およびアウタリ
ード17が配置され、インナリードには金線19が接続
されている。これら全体はモールド樹脂16によって覆
われ保護される。図2は、図1の半導体装置に用いられ
ているリードフレーム10を示す斜視図である。ダイパ
ッド3の4隅から内側吊りリード7が延び、外側吊りリ
ード8、ダムバー5に連続している。補強フレーム4は
内側吊りリード4と外側吊りリードとの間に、ダムバー
5に平行に配置され、内側吊りリードおよび外側吊りリ
ードと交差部1を形成する。(First Embodiment) FIG. 1 is a diagram illustrating a semiconductor device according to a first embodiment. The semiconductor chip 20 is mounted on the die pad 3 of the lead frame via the die bonding agent 3a. An inner suspension lead 7 and an outer suspension lead extend outward from the die pad 3, and a reinforcing frame 4 is disposed between the two. An inner lead 18, a dam bar 5, and an outer lead 17 are arranged continuously from the outer suspension lead, and a gold wire 19 is connected to the inner lead. These components are entirely covered and protected by the mold resin 16. FIG. 2 is a perspective view showing a lead frame 10 used in the semiconductor device of FIG. Inner suspension leads 7 extend from four corners of the die pad 3 and are continuous with the outer suspension leads 8 and the dam bar 5. The reinforcing frame 4 is arranged between the inner suspension lead 4 and the outer suspension lead in parallel with the dam bar 5 and forms the intersection 1 with the inner suspension lead and the outer suspension lead.
【0035】図3は上記交差部の拡大図である。図3に
おいて、交差部から上記ダイパッド側に内側吊りリード
7が延び、その逆向きに外側吊りリード8が延びてい
る。樹脂剥離防止孔6は、上記交差部に設けられてお
り、内側吊りリード根元境界点7a,7bを結ぶ直線L
よりも外側、すなわちダイパッドと反対側の範囲に位置
している。このため、図13に示すように、樹脂剥離防
止孔の周囲は、部分的にでも内側吊りリードの側部で囲
まれない。樹脂剥離防止孔を内側吊りリードの側部で囲
む部分があると、その内側吊りリードの細い幅の部分で
負荷を受けることになる。この幅の狭い部分は、他の部
分に比べて、剛性が低く、耐折り曲げ性、引張および圧
縮強度などが低いので、負荷がかかると変形が集中す
る。このため、ダイパッドを面外方向に押し出す負荷が
かかると、この部分にひずみが集中して折れ曲がりが生
じてしまう。図3に示す樹脂剥離防止孔は、図13に示
すものと異なり、交差部の部分によってその周囲を囲ま
れている。このため、幅の狭い個所が出現していない。
したがって、樹脂剥離防止孔の周囲は強度が高く、変形
が集中することがないので、ダイボンド、ワイヤボンド
およびモールド工程において折れ曲がり変形が生じな
い。この結果、樹脂剥離と未注入発生を防止する樹脂剥
離防止孔6を設けたうえで、内側吊りリード根元部の折
れ曲りを防止することができる。FIG. 3 is an enlarged view of the intersection. In FIG. 3, the inner suspension lead 7 extends from the intersection to the die pad side, and the outer suspension lead 8 extends in the opposite direction. The resin peeling prevention hole 6 is provided at the intersection, and a straight line L connecting the inner suspension lead root boundary points 7a and 7b.
Outside, that is, in a range opposite to the die pad. Therefore, as shown in FIG. 13, the periphery of the resin peeling prevention hole is not partially surrounded by the side portion of the inner suspension lead. If there is a portion surrounding the resin peeling prevention hole by the side of the inner suspension lead, a load is applied to the narrow portion of the inner suspension lead. The narrow portion has lower rigidity, lower bending resistance, lower tensile and compressive strength, and the like than the other portions, so that deformation is concentrated when a load is applied. For this reason, if a load is applied to push the die pad out of the plane, the strain is concentrated on this portion and the portion is bent. The resin peeling prevention holes shown in FIG. 3 are different from those shown in FIG. For this reason, a narrow portion does not appear.
Therefore, the periphery of the resin peeling prevention hole is high in strength and deformation is not concentrated, so that bending deformation does not occur in the die bonding, wire bonding and molding steps. As a result, it is possible to prevent bending of the root portion of the inner suspension lead after providing the resin separation preventing hole 6 for preventing resin separation and non-injection.
【0036】(実施の形態2)図4は、実施の形態2に
おける半導体装置の交差部を説明する図である。このリ
ードフレームにおいては、コーナー補強部9を備え、内
側吊りリード根元部および補強フレーム4の交差部を補
強している。このコーナー補強部9は、キャビティ11
に向けて凹の曲率半径がつけられている。(Embodiment 2) FIG. 4 is a diagram illustrating an intersection of a semiconductor device according to a second embodiment. The lead frame includes a corner reinforcing portion 9 to reinforce the intersection between the inner suspension lead base and the reinforcing frame 4. This corner reinforcement 9 is provided with a cavity 11
A concave radius of curvature is provided toward.
【0037】コーナー補強部9を設けた場合の内側吊り
リード根元境界点は、コーナー補強部9が内側吊りリー
ドに連続する境界点7a,7bである。図4を図3と比
較すると分かるように、コーナー補強部9を設けた場合
には、内側吊りリード根元境界点は、ダイパッド側に大
きくシフトしている。すなわち、樹脂剥離防止孔を内側
吊りリードの内側(ダイパッド側)に移動させて設けて
も、コーナー補強部9があるために、強度低下が大きく
生じる個所がなく、上記のような折れ曲りが発生しな
い。In the case where the corner reinforcing portion 9 is provided, the inner suspension lead root boundary point is the boundary point 7a, 7b where the corner reinforcing portion 9 is continuous with the inner suspension lead. As can be seen by comparing FIG. 4 with FIG. 3, when the corner reinforcing portion 9 is provided, the boundary between the roots of the inner suspension leads is largely shifted to the die pad side. That is, even if the resin peeling prevention hole is moved and provided inside the inner suspension lead (on the die pad side), there is no place where the strength is greatly reduced due to the presence of the corner reinforcing portion 9, and the above-described bending occurs. do not do.
【0038】さらに、上記のコーナー補強部9には曲率
半径がつけられているので、コーナー補強部から内側吊
りリードに連続する境界点7a,7bおよび補強フレー
ム4に連続する境界点(符号なし)で滑らかであるの
で、応力集中が生じ難い。これは、図3の同じ箇所と比
較することにより明瞭となる。このため、内側吊りリー
ド7と補強フレーム4とを広げる方向に応力が付加され
ても、裂けることがなくなる。また、上記のコーナー補
強部9により、上記折れ曲りが防止されるだけでなく、
補強フレームが補強され、リードフレーム全体が強化さ
れる。Further, since the corner reinforcing portion 9 has a radius of curvature, the boundary points 7a and 7b which are continuous from the corner reinforcing portion to the inner suspension lead and the boundary points which are continuous with the reinforcing frame 4 (no sign). And smooth, so that stress concentration hardly occurs. This becomes clearer by comparing with the same part in FIG. For this reason, even if stress is applied in the direction in which the inner suspension lead 7 and the reinforcing frame 4 are spread, they do not tear. Further, the corner reinforcing portion 9 not only prevents the bending, but also
The reinforcing frame is reinforced, and the entire lead frame is reinforced.
【0039】図5は、上記図4のリードフレームと同様
にコーナー補強部9を設けた例である。このコーナー補
強部9は、図4に示した例のように、アールを付けず、
面取りをしている。このため、コーナー補強部9から内
側吊りリードに連続する箇所では、それほど滑らかにな
らず、直交している。したがって、応力集中はある程度
避けられないが、図3の場合と比較するとその程度は小
さく、その上、上記応力集中以外の優れた効果は、すべ
て得ることができる。また、面取りの場合は曲率半径を
設ける場合に比べて加工が簡単であり、その分、加工コ
ストを節減することができる。FIG. 5 shows an example in which a corner reinforcing portion 9 is provided similarly to the lead frame of FIG. This corner reinforcing portion 9 does not have a radius as in the example shown in FIG.
Beveling. For this reason, at a portion that is continuous from the corner reinforcing portion 9 to the inner suspension lead, the portion is not so smooth and is orthogonal. Therefore, stress concentration cannot be avoided to some extent, but the degree thereof is smaller than that in the case of FIG. 3, and all excellent effects other than the above-mentioned stress concentration can be obtained. Further, in the case of chamfering, machining is simpler than in the case of providing a radius of curvature, and the machining cost can be reduced accordingly.
【0040】(実施の形態3)本実施の形態では、図6
に示すように、内側吊りリードの根元部の片側にのみコ
ーナー補強部9を設け、他方の側にはコーナー補強部を
設けていない。この場合においても、内側吊りリード根
元境界点7a,7bを結ぶ線Lからダイパッド(図示せ
ず)側には、樹脂剥離防止孔は開けられていない。この
ため、樹脂剥離防止孔6の部分は十分な補強がなされて
おり、樹脂剥離防止孔付近において内側吊りリードが折
れ曲がることはなくなる。この結果、高い耐久性を有
し、かつ重量増が大きくないリードフレームを有する半
導体装置を提供することができる。(Embodiment 3) In this embodiment, FIG.
As shown in (1), the corner reinforcement 9 is provided only on one side of the root of the inner suspension lead, and the corner reinforcement is not provided on the other side. Also in this case, no resin peeling prevention hole is formed on the die pad (not shown) side from the line L connecting the inner suspension lead root boundary points 7a and 7b. For this reason, the portion of the resin peeling prevention hole 6 is sufficiently reinforced, and the inner suspension lead does not bend near the resin peeling prevention hole. As a result, it is possible to provide a semiconductor device having a lead frame that has high durability and does not increase weight significantly.
【0041】(実施の形態4)図7は、実施の形態4に
おける半導体装置を説明する図である。上述のとおり、
本発明の半導体装置では、半導体チップは補強フレーム
を覆いダムバーにかかる程度の大きさを有する。このた
め、半導体チップと補強フレームとの間の隙間は、20
μm程度と狭く、モールド樹脂の侵入深さ(奥行き)は
0.3mm程度しか期待できない。このため、コーナー
補強部9を設けた場合、上記の樹脂剥離防止孔の形状お
よび配置では、各部分の縁辺部からの樹脂の侵入は限ら
れた範囲しか充填できないので、未充填の領域が発生し
てしまう。本実施の形態では、この未充填または未注入
の領域の発生を防止するために、樹脂剥離防止孔を未注
入領域発生防止のための特別な形状にする。(Embodiment 4) FIG. 7 is a diagram illustrating a semiconductor device according to Embodiment 4. As mentioned above,
In the semiconductor device of the present invention, the semiconductor chip has a size that covers the reinforcing frame and covers the dam bar. Therefore, the gap between the semiconductor chip and the reinforcing frame is 20
It is as small as about μm, and the penetration depth (depth) of the mold resin can be expected to be only about 0.3 mm. For this reason, when the corner reinforcing portion 9 is provided, the above-described shape and arrangement of the resin peeling prevention holes can fill only a limited area of the resin from entering from the edge portion of each portion, so that an unfilled region occurs. Resulting in. In the present embodiment, in order to prevent the occurrence of the unfilled or uninjected region, the resin peeling prevention hole is formed in a special shape for preventing the occurrence of the uninjected region.
【0042】図7において、内側吊りリード、補強フレ
ームおよびコーナー補強部の辺縁から0.3mmの幅の
領域をとり、覆えなかった領域をCwとする。このと
き、樹脂剥離防止孔6の形状および位置を、図7のよう
にすれば、その樹脂剥離防止孔6の縁から同じ0.3m
mの幅で領域をとれば、Cwもその領域の中に含まれ
る。この樹脂剥離防止孔は、境界点7a,8aの中点1
5aおよび境界点7b,8bの中点15bを含み、かつ
補強フレームのコーナー部中央付近から見て、これら中
点方向に突き出している孔周縁部、すなわち辺を有して
いる。このコーナー部中央付近から中点に向かう方向
は、上記中央部からCwに向かう方向に略一致する。こ
のような、形状の樹脂剥離防止孔を設けることにより、
未注入領域を発生させずに、全領域を覆うことができ
る。この結果、コーナー補強部を設けた場合であって
も、樹脂封止を完全に行うことが可能になる。In FIG. 7, a region having a width of 0.3 mm is taken from the edge of the inner suspension lead, the reinforcing frame, and the corner reinforcing portion, and the uncovered region is defined as Cw. At this time, if the shape and position of the resin peeling prevention hole 6 are as shown in FIG.
If an area is taken with a width of m, Cw is also included in the area. This resin peeling prevention hole is located at the middle point
5A and the middle point 15b of the boundary points 7b and 8b, and has a hole peripheral portion, that is, a side, protruding in the direction of the middle point when viewed from near the center of the corner of the reinforcing frame. The direction from the vicinity of the center of the corner to the midpoint substantially coincides with the direction from the center to Cw. By providing such a shape resin prevention hole,
The entire area can be covered without generating an unimplanted area. As a result, even when the corner reinforcing portion is provided, the resin sealing can be completely performed.
【0043】一方、樹脂剥離防止孔について、このよう
な形状および配置をとらなかった場合、図8に示すよう
に、未注入領域が発生する。図8において、内側吊りリ
ード、補強フレーム、コーナー補強部および樹脂剥離防
止孔の縁辺から、0.3mmの幅で領域をとった場合で
も、Coのような未注入領域を発生してしまう。On the other hand, when such a shape and arrangement are not taken for the resin peeling prevention holes, as shown in FIG. 8, a non-injected region occurs. In FIG. 8, even when a region having a width of 0.3 mm is taken from the edge of the inner suspension lead, the reinforcing frame, the corner reinforcing portion, and the resin peeling prevention hole, an uninjected region such as Co is generated.
【0044】上記において、本発明の実施の形態につい
て説明を行ったが、上記に開示された本発明の実施の形
態は、あくまで例示であって、本発明の範囲はこれら発
明の実施の形態に限定されない。本発明の範囲は、特許
請求の範囲によって示され、さらに特許請求の範囲の記
載と均等の意味および範囲内でのすべての変更を含むも
のである。Although the embodiments of the present invention have been described above, the embodiments of the present invention disclosed above are merely examples, and the scope of the present invention is not limited to these embodiments. Not limited. The scope of the present invention is defined by the appended claims, and includes all modifications within the meaning and scope equivalent to the description of the claims.
【0045】[0045]
【発明の効果】本発明の半導体装置を用いることによ
り、樹脂剥離を防止したうえで、内側吊りリード根元部
の折れ曲がりを防止することができる。さらに、内側吊
りリードの根元部にコーナー補強部を設けることによ
り、本半導体装置に用いられているリードフレームはよ
り一層強化され、余裕をもって樹脂剥離防止孔を設ける
ことが可能になる。コーナー補強部を設けた場合、樹脂
の未注入領域の発生が懸念されるが、本発明の樹脂剥離
防止孔の形状、配置を用いることにより、樹脂剥離と内
側吊りリード根元部の折れ曲がりとを防止した上で、樹
脂の未注入領域発生を解消することができる。By using the semiconductor device of the present invention, it is possible to prevent bending of the root portion of the inner suspension lead while preventing resin peeling. Further, by providing the corner reinforcing portion at the root of the inner suspension lead, the lead frame used in the present semiconductor device is further strengthened, and the resin peeling prevention hole can be provided with a margin. When the corner reinforcing portion is provided, there is a concern that a resin non-injected region may occur. However, by using the shape and arrangement of the resin peeling prevention hole of the present invention, resin peeling and bending of the inner suspension lead root portion are prevented. After that, it is possible to eliminate the generation of the non-injection region of the resin.
【図1】 本発明の実施の形態1における半導体装置の
断面図である。FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention.
【図2】 図1の半導体装置に用いられるリードフレー
ムの斜視図である。FIG. 2 is a perspective view of a lead frame used in the semiconductor device of FIG.
【図3】 図2のリードフレームの内側吊りリード根元
部付近を説明する図である。FIG. 3 is a view for explaining the vicinity of a root portion of an inner suspension lead of the lead frame of FIG. 2;
【図4】 実施の形態2における半導体装置において、
両側にコーナー補強部を設けた内側吊りリード根元部付
近を説明する図である。FIG. 4 illustrates a semiconductor device according to a second embodiment;
It is a figure explaining the vicinity of the root part of the inside suspension lead which provided the corner reinforcement on both sides.
【図5】 実施の形態2における別の半導体装置を説明
する図である。FIG. 5 is a diagram illustrating another semiconductor device in Embodiment 2.
【図6】 実施の形態3における半導体装置において、
片側にコーナー補強部を設けた内側吊りリード根元部付
近を説明する図である。FIG. 6 illustrates a semiconductor device according to Embodiment 3;
It is a figure explaining the vicinity of the root part of the inside suspension lead which provided the corner reinforcement on one side.
【図7】 実施の形態4の半導体装置のリードフレーム
において、樹脂未注入領域の発生防止の機構を説明する
図である。FIG. 7 is a diagram illustrating a mechanism for preventing occurrence of a resin non-injection region in a lead frame of a semiconductor device according to a fourth embodiment;
【図8】 本発明の半導体装置のリードフレームにおい
て、樹脂未注入領域が発生する機構を説明する図であ
る。FIG. 8 is a diagram illustrating a mechanism in which a resin non-injection region occurs in the lead frame of the semiconductor device of the present invention.
【図9】 従来の半導体装置のリードフレームを説明す
る図である。FIG. 9 is a diagram illustrating a lead frame of a conventional semiconductor device.
【図10】 額縁状補強フレームを設けた従来のリード
フレームを説明する図である。FIG. 10 is a view for explaining a conventional lead frame provided with a frame-shaped reinforcing frame.
【図11】 従来の内側吊りリード根元部に樹脂剥離防
止孔を設けた図である。FIG. 11 is a diagram in which a resin peeling prevention hole is provided at a root portion of a conventional inner suspension lead.
【図12】 従来のリードフレームの内側吊りリード根
元部において折れ曲がった状態を説明する図である。FIG. 12 is a diagram illustrating a bent state at the base of the inner suspension lead of the conventional lead frame.
【図13】 図10における折れ曲がり部Aの拡大図で
ある。FIG. 13 is an enlarged view of a bent portion A in FIG.
1 交差部、3 ダイパッド、3a ダイボンド剤、4
補強フレーム、6樹脂剥離防止孔、7 内側吊りリー
ド、7a,7b 内側吊りリード根元境界点、8 外側
吊りリード、8a,8b 外側吊りリード上端境界点、
9 コーナー補強部、11 キャビティ、15a,15
b 内側および外側吊りリード境界点の中点、L 樹脂
剥離防止孔限界線、Cw 内側吊りリードと補強フレー
ムとコーナー補強部の縁から一定範囲内の領域に入らな
い領域、Co 内側吊りリードと補強フレームとコーナ
ー補強部と樹脂剥離防止孔の縁から一定範囲内の領域に
入らない領域。1 intersection, 3 die pad, 3a die bonding agent, 4
Reinforcement frame, 6 resin peel prevention hole, 7 inner suspension lead, 7a, 7b inner suspension lead root boundary point, 8 outer suspension lead, 8a, 8b outer suspension lead upper boundary point,
9 corner reinforcement, 11 cavities, 15a, 15
b Midpoint of boundary between inner and outer suspension leads, L resin peeling prevention hole limit line, Cw Area that does not fall within a certain area from the edge of inner suspension lead, reinforcement frame and corner reinforcement, Co Inner suspension lead and reinforcement An area that does not enter an area within a certain range from the edges of the frame, the corner reinforcing section, and the resin peeling prevention hole.
Claims (11)
載するリードフレームとを備えた半導体装置であって、 前記リードフレームは、補強フレームと、前記補強フレ
ームに囲まれた前記半導体チップの搭載部であるダイパ
ッドと、当該ダイパッドと前記補強フレームのコーナー
部との間に延在する内側吊りリードとを備え、 前記補強フレームと内側吊りリードとの交差部に、樹脂
剥離防止孔が設けられ、 前記樹脂剥離防止孔は、前記交差部から延びる内側吊り
リードの両側部に前記補強フレームが連続する点である
第1および第2の内側吊りリード根元境界点を結ぶ線よ
りも、前記ダイパッドと反対側の領域の前記交差部に位
置する、半導体装置。1. A semiconductor device comprising a semiconductor chip and a lead frame on which the semiconductor chip is mounted, wherein the lead frame includes a reinforcing frame and a mounting portion of the semiconductor chip surrounded by the reinforcing frame. A die pad, and an inner suspension lead extending between the die pad and a corner of the reinforcing frame; a resin separation preventing hole is provided at an intersection of the reinforcing frame and the inner suspension lead; The peel prevention hole is located on the opposite side of the die pad from the line connecting the first and second inner suspension lead root boundary points, which are points where the reinforcing frame is continuous on both sides of the inner suspension lead extending from the intersection. A semiconductor device located at the intersection of regions.
と内側吊りリードとを楔状に分断している前記リードフ
レームの空隙部であるキャビティを埋めるように、前記
補強フレームと当該内側吊りリードとの間に延在するコ
ーナー補強部が設けられた、請求項1に記載の半導体装
置。2. In the intersection, between the reinforcing frame and the inner suspension lead, so as to fill a cavity which is a gap of the lead frame dividing the reinforcing frame and the inner suspension lead into a wedge shape. The semiconductor device according to claim 1, further comprising a corner reinforcing portion extending to the corner.
延びる内側吊りリードの両側部に設けられ、前記第1お
よび第2の内側吊りリード根元境界点は、前記内側吊り
リードに前記コーナー補強部が連続する境界点である、
請求項2に記載の半導体装置。3. The corner reinforcement portion is provided on both sides of an inner suspension lead extending from the intersection, and the first and second inner suspension lead root boundary points are connected to the inner suspension lead by the corner reinforcement portion. Is a continuous boundary point,
The semiconductor device according to claim 2.
延びる内側吊りリードの片側に設けられ、前記第1の内
側吊りリード根元境界点は、前記補強フレームが連続す
る境界点であり、前記第2の内側吊りリード根元境界点
は、前記コーナー補強部が連続する境界点である、請求
項2に記載の半導体装置。4. The corner reinforcing portion is provided on one side of an inner suspension lead extending from the intersection, the first inner suspension lead root boundary point is a boundary point where the reinforcing frame is continuous, and 3. The semiconductor device according to claim 2, wherein the inner suspension lead root boundary point is a boundary point where the corner reinforcing portions are continuous. 4.
ームの空隙部であるキャビティ側に凹の曲率半径を有す
る、請求項2〜4のいずれかに記載の半導体装置。5. The semiconductor device according to claim 2, wherein said corner reinforcing portion has a concave radius of curvature on a cavity side which is a void portion of said lead frame.
ードが延びる方向に直交する方向に面取りをする面取り
部によって構成される、請求項2〜4のいずれかに記載
の半導体装置。6. The semiconductor device according to claim 2, wherein said corner reinforcing portion is formed by a chamfered portion chamfering in a direction orthogonal to a direction in which said inner suspension lead extends.
すべての部分が、前記補強フレーム、前記内側吊りリー
ド、前記コーナー補強部および前記樹脂剥離防止孔のそ
れぞれの周縁部から所定幅内側位置までの範囲内に位置
するように設けられている、請求項2〜6のいずれかに
記載の半導体装置。7. All the portions of the intersection including the corner reinforcing portion from the peripheral edge of the reinforcing frame, the inner suspension lead, the corner reinforcing portion, and the resin peeling prevention hole to a position inside a predetermined width. The semiconductor device according to any one of claims 2 to 6, wherein the semiconductor device is provided so as to be located within the range of (2).
請求項7に記載の半導体装置。8. The value of the predetermined width is 0.3 mm.
The semiconductor device according to claim 7.
ードが延びる方向にその長手方向を沿わせている、請求
項1〜8のいずれかに記載の半導体装置。9. The semiconductor device according to claim 1, wherein the resin peeling prevention hole extends along the longitudinal direction in a direction in which the inner suspension lead extends.
補強部および補強フレームの縁から所定幅内側位置まで
それぞれの範囲を画定したとき、そのいずれの範囲内に
も含まれない範囲の領域に向かって突き出している孔周
縁部を有する、請求項7または8に記載の半導体装置。10. The resin separation preventing hole, when defining respective ranges from the edges of the corner reinforcing portion and the reinforcing frame to a position inside a predetermined width, is directed to a region of a range not included in any of the ranges. 9. The semiconductor device according to claim 7, wherein the semiconductor device has a peripheral edge of the hole.
リード根元境界点と外側吊りリードの上部境界点とを結
ぶ線の中点を含むように突き出している孔周縁部を有す
る、請求項7、8、10のいずれかに記載の半導体装
置。11. The resin peeling prevention hole has a hole peripheral portion protruding so as to include a middle point of a line connecting the inner suspension lead root boundary point and the upper suspension point of the outer suspension lead. 11. The semiconductor device according to any one of claims 8, 8, and 10.
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