JP2002033331A5 - - Google Patents

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Publication number
JP2002033331A5
JP2002033331A5 JP2001142322A JP2001142322A JP2002033331A5 JP 2002033331 A5 JP2002033331 A5 JP 2002033331A5 JP 2001142322 A JP2001142322 A JP 2001142322A JP 2001142322 A JP2001142322 A JP 2001142322A JP 2002033331 A5 JP2002033331 A5 JP 2002033331A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001142322A
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Japanese (ja)
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JP2002033331A (ja
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Priority to JP2001142322A priority Critical patent/JP2002033331A/ja
Priority claimed from JP2001142322A external-priority patent/JP2002033331A/ja
Publication of JP2002033331A publication Critical patent/JP2002033331A/ja
Publication of JP2002033331A5 publication Critical patent/JP2002033331A5/ja
Withdrawn legal-status Critical Current

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JP2001142322A 2000-05-12 2001-05-11 半導体装置及びその作製方法 Withdrawn JP2002033331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001142322A JP2002033331A (ja) 2000-05-12 2001-05-11 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-140592 2000-05-12
JP2000140592 2000-05-12
JP2001142322A JP2002033331A (ja) 2000-05-12 2001-05-11 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2002033331A JP2002033331A (ja) 2002-01-31
JP2002033331A5 true JP2002033331A5 (enrdf_load_html_response) 2008-05-22

Family

ID=26591806

Family Applications (1)

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JP2001142322A Withdrawn JP2002033331A (ja) 2000-05-12 2001-05-11 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP2002033331A (enrdf_load_html_response)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559506B1 (en) * 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same
JP4610173B2 (ja) * 2003-10-10 2011-01-12 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
KR100659061B1 (ko) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판표시장치
JP4333574B2 (ja) 2004-12-17 2009-09-16 三菱電機株式会社 液晶表示装置ならびにその製造方法
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012151453A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
KR102097171B1 (ko) * 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
WO2024165961A1 (ja) * 2023-02-10 2024-08-15 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6429821A (en) * 1987-07-24 1989-01-31 Nec Corp Thin film field effect type transistor element array and its production
FR2679057B1 (fr) * 1991-07-11 1995-10-20 Morin Francois Structure d'ecran a cristal liquide, a matrice active et a haute definition.
JPH07235678A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 薄膜半導体装置及びその製造方法
JP3574270B2 (ja) * 1996-04-17 2004-10-06 三菱電機株式会社 Alテーパドライエッチング方法
JP2798066B2 (ja) * 1996-08-05 1998-09-17 日本電気株式会社 薄膜トランジスター、その製造方法および表示装置

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