JP2002016176A - Wiring board and connection structure therefor - Google Patents

Wiring board and connection structure therefor

Info

Publication number
JP2002016176A
JP2002016176A JP2000197266A JP2000197266A JP2002016176A JP 2002016176 A JP2002016176 A JP 2002016176A JP 2000197266 A JP2000197266 A JP 2000197266A JP 2000197266 A JP2000197266 A JP 2000197266A JP 2002016176 A JP2002016176 A JP 2002016176A
Authority
JP
Japan
Prior art keywords
wiring board
ribbon
connection pad
semiconductor element
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000197266A
Other languages
Japanese (ja)
Inventor
Satoshi Hamano
智 濱野
Masahiro Tomisako
正浩 冨迫
Toshiaki Shigeoka
俊昭 重岡
Kazuyoshi Kodama
和善 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000197266A priority Critical patent/JP2002016176A/en
Publication of JP2002016176A publication Critical patent/JP2002016176A/en
Pending legal-status Critical Current

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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Waveguide Connection Structure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board provided with high connection strength and stability with high connection reliability by an Au ribbon with another external electric circuit even after mounting a semiconductor element by brazing metal filler of Au-Sn or the like and the connection structure. SOLUTION: On this wiring board A composed by attaching and forming a wiring circuit layer 2 whose main component is Cu on at least the surface of an insulation substrate 1 composed of a glass ceramic sinter, a connection pad 7 for connecting the other electric circuit by the Au ribbon 8 is provided on the end part of the wiring board A. The connection pad 7 is composed by successively forming an Ni plated film 7b with the thickness of 1-6 μm and an Au plated film 7c with the thickness of 1.5 μm or more on the surface of a conductor layer 7a whose main component is Cu. The width x of the connection pad 7 connected with the Au ribbon 8 is made larger than the width y of the connected Au ribbon 8 for 20 μm or more.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、マイクロ波やミリ
波等の高周波領域で使用される通信用途の半導体素子収
納用のガラスセラミック焼結体を絶縁基板とする配線基
板とその接続構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board using a glass ceramic sintered body for housing a semiconductor element for communication purposes used in a high frequency range such as a microwave or a millimeter wave as an insulating substrate and a connection structure thereof. It is.

【０００２】[0002]

【従来技術】従来より、半導体素子などを搭載するため
のパッケージとしては、アルミナなどのセラミックパッ
ケージが用いられているが、最近に至り、アルミナに比
較して誘電率が低い、焼成温度が低い低抵抗の導体、例
えばＣｕ、Ａｕ、Ａｇでの配線を形成できるなどの点で
優れていることから、特にマイクロ波やミリ波の高周波
領域で使用される通信用途のパッケージとしてガラスセ
ラミックスを絶縁基板とするセラミックパッケージが注
目されている。2. Description of the Related Art Conventionally, a ceramic package such as alumina has been used as a package for mounting a semiconductor element or the like. However, recently, a dielectric package having a lower dielectric constant and a lower firing temperature than alumina have been used. Since it is excellent in that a conductor of resistance, for example, a wiring of Cu, Au, Ag can be formed, glass ceramic is used as an insulating substrate as a package for communication used particularly in a microwave or millimeter wave high frequency region. Ceramic packages are attracting attention.

【０００３】従来、ガラスセラミックを絶縁材料とする
セラミックパッケージの製造方法としては、例えばホウ
ケイ酸系ガラス等のガラス成分とセラミックフィラー成
分とからなるガラスセラミック原料と有機バインダーか
らなるグリーンシートに穴開けしてスルーホールを形成
し、このスルーホールに導体ペーストを充填し、次い
で、このシートの所定位置に導体ペーストを印刷して導
体パターンを形成する。これらのシートを位置合わせし
て加圧積層した後、積層体を加熱して脱バインダー及び
焼成を行い、配線回路層が多層に積層された絶縁基板を
有するパッケージが得られる。Conventionally, as a method of manufacturing a ceramic package using glass ceramic as an insulating material, a green sheet made of a glass ceramic raw material comprising a glass component such as borosilicate glass and a ceramic filler component and an organic binder is formed. Then, a through hole is formed, the through hole is filled with a conductive paste, and then the conductive paste is printed at a predetermined position on the sheet to form a conductive pattern. After these sheets are aligned and laminated under pressure, the laminate is heated to remove the binder and fire, thereby obtaining a package having an insulating substrate in which wiring circuit layers are laminated in multiple layers.

【０００４】そして、このようなガラスセラミック配線
基板の導体材料には、通常、Ｃｕ、Ａｕ、Ａｇが使用さ
れるが、このうち、Ａｕはコストの点から汎用性に欠
け、一般的にはＣｕまたはＡｇが使用される。[0004] Usually, Cu, Au, and Ag are used as the conductor material of such a glass-ceramic wiring board. Among them, Au lacks versatility in terms of cost, and generally Cu is used. Alternatively, Ag is used.

【０００５】Ａｇ導体の場合は、大気雰囲気での焼成が
可能であり、また表面の導体にメッキを施さないことか
らコスト面では有利である。しかし、表層導体における
マイグレーションや半田濡れ性等の信頼性において問題
がある。[0005] In the case of an Ag conductor, firing in an air atmosphere is possible, and the surface conductor is not plated, which is advantageous in terms of cost. However, there is a problem in reliability such as migration and solder wettability in the surface conductor.

【０００６】また、Ｃｕ導体の場合は非酸化性雰囲気で
焼成し、Ｃｕ導体表面に酸化防止のためにＮｉやＡｕ等
のメッキを施す必要があるが、高い信頼性を確保できる
という利点がある。In the case of a Cu conductor, it is necessary to fire in a non-oxidizing atmosphere and to plating the surface of the Cu conductor with Ni, Au or the like to prevent oxidation, but there is an advantage that high reliability can be ensured. .

【０００７】Ｃｕ導体からなる表面回路を有するパッケ
ージの場合、半導体素子とのワイヤボンディングにあた
り、導体表面の酸化によりワイヤーボンディング性が劣
化するのを抑制するために、通常、Ｃｕ導体表面にＮｉ
メッキを施し、さらにＡｕメッキを施すことが行なわれ
ている。その後、半導体素子を実装し、ワイヤーボンデ
ィング等によって接続処理が行われる。[0007] In the case of a package having a surface circuit made of a Cu conductor, in order to suppress the wire bonding property from deteriorating due to oxidation of the conductor surface during wire bonding with a semiconductor element, a Ni conductor is usually provided on the Cu conductor surface.
Plating is performed, and further, Au plating is performed. Thereafter, the semiconductor element is mounted, and connection processing is performed by wire bonding or the like.

【０００８】このようなパッケージにおけるＮｉメッ
キ、Ａｕメッキとワイヤボンディング性に関しては、特
開平６−３４２９６５号には、０．５〜５．０μｍの厚
みのＮｉメッキ膜上に０．０５〜１．５μｍの厚みのＡ
ｕメッキ膜を形成することにより、共晶Ｓｎ−Ｐｂ半田
のぬれ性、耐熱性、前記共晶半田による接着強度、メッ
キ膜膨れが良好なセラミック基板が提案されている。[0008] Regarding Ni plating, Au plating and wire bonding properties in such a package, Japanese Patent Application Laid-Open No. 6-342965 discloses that a Ni plating film having a thickness of 0.5 to 5.0 µm is coated on a Ni plating film having a thickness of 0.5 to 5.0 µm. A with a thickness of 5 μm
By forming a u-plated film, there has been proposed a ceramic substrate having good wettability and heat resistance of the eutectic Sn-Pb solder, adhesion strength by the eutectic solder, and swelling of the plating film.

【０００９】また、特開平１１−６７９５７号には、Ｎ
ｉメッキ膜上の電解Ａｕメッキ膜の厚みを０．２〜１．
０μｍとすることによりＡｕワイヤのボンディング性と
半田付け性を両立できることが報告されている。Japanese Patent Application Laid-Open No. 11-67957 discloses that N
The thickness of the electrolytic Au plating film on the i-plating film is set to 0.2 to 1.
It is reported that by setting the thickness to 0 μm, both the bonding property and the solderability of the Au wire can be achieved.

【００１０】[0010]

【発明が解決しようとする課題】一方、接続パッド間の
接続方法としては、上記のワイヤーボンディング法以外
に、Ａｕなどのリボンによって接続することも行なわれ
ている。On the other hand, as a method of connecting between the connection pads, in addition to the above-mentioned wire bonding method, connection using a ribbon such as Au is also performed.

【００１１】ところが、Ｎｉ−Ａｕメッキを施したＣｕ
導体からなる従来の接続パッドに対してワイヤーボンデ
ィングに変えてＡｕリボンによるボンディングを行った
場合、配線基板の他の表面に半導体素子を実装する工程
等が存在する場合、その実装時の熱処理により、接続パ
ッドのＡｕメッキ膜の下地層であるＮｉがＡｕメッキ膜
中に拡散してＡｕメッキ膜の表面にてＮｉＯが生成され
てしまい、Ａｕリボンの接続パッドとの接続強度が大き
く低下するという問題があった。However, Ni-Au plated Cu
In the case where a conventional connection pad made of a conductor is bonded with an Au ribbon instead of wire bonding, if there is a step of mounting a semiconductor element on the other surface of the wiring board, etc., a heat treatment at the time of mounting is performed. The problem that Ni, which is the underlayer of the Au plating film of the connection pad, diffuses into the Au plating film and NiO is generated on the surface of the Au plating film, and the connection strength of the Au ribbon to the connection pad is greatly reduced. was there.

【００１２】かかる現象は、特に、配線基板において半
導体素子以外の他の電気回路と強固に接続する場合に、
幅の広いＡｕリボンによって接続する場合に顕著であ
る。この他の電気回路との接続にあたっては、さらに高
い接着強度が要求されるが、これらを充分に満足するよ
うな配線基板における接続構造についてはあまり検討さ
れていないのが現状であった。[0012] Such a phenomenon occurs particularly when a wiring board is firmly connected to an electric circuit other than a semiconductor element.
This is remarkable when the connection is made with a wide Au ribbon. In connection with other electric circuits, higher bonding strength is required, but connection structures in a wiring board that sufficiently satisfy these requirements have not been studied so far.

【００１３】また、配線基板の表面に半導体素子を実装
する場合、その半導体素子の実装にあたってＡｕ−Ｓｎ
などのロウ材によって実装する場合には、その熱処理温
度が３００℃以上と高温となるために、ＮｉのＡｕメッ
キ膜への拡散も顕著となり、Ａｕリボンの接着不良が顕
著となる。When a semiconductor element is mounted on the surface of a wiring board, Au-Sn is required for mounting the semiconductor element.
In the case of mounting with a brazing material such as such, since the heat treatment temperature is as high as 300 ° C. or more, the diffusion of Ni into the Au plating film becomes remarkable, and the adhesion failure of the Au ribbon becomes remarkable.

【００１４】従って、本発明は、Ａｕ−Ｓｎなどのロウ
材によって半導体素子を実装した後においても、他の外
部電気回路とのＡｕリボンによる接続信頼性が高く、高
い接続強度と安定性を有する配線基板と、その接続構造
を提供することを目的とするものである。Therefore, according to the present invention, even after a semiconductor element is mounted with a brazing material such as Au-Sn, the reliability of connection with other external electric circuits by the Au ribbon is high, and the connection strength and stability are high. It is an object of the present invention to provide a wiring board and a connection structure thereof.

【００１５】[0015]

【課題を解決するための手段】本発明者らは、上記課題
に対して検討を重ねた結果、最表面のＡｕメッキ厚みを
通常よりも厚くすることにより、半導体素子の実装など
による熱処理によってＮｉの拡散が生じてもＮｉはＡｕ
メッキの表面まで到達しにくくなるためにＡｕメッキ表
面におけるＮｉの酸化物の形成が抑制され、Ａｕリボン
によるボンディング性が大きく向上することを見いだし
た。Means for Solving the Problems The inventors of the present invention have studied the above problems, and as a result, by increasing the thickness of Au plating on the outermost surface to be larger than usual, the heat treatment such as mounting of a semiconductor element has been carried out. Ni is Au even if diffusion of
It has been found that the formation of Ni oxide on the Au plating surface is suppressed because it is difficult to reach the surface of the plating, and the bonding property with the Au ribbon is greatly improved.

【００１６】即ち、本発明の配線基板は、ガラスセラミ
ック焼結体からなる絶縁基板の少なくとも表面にＣｕを
主成分とする配線回路層が被着形成されてなる配線基板
において、該配線基板の端部に他の電気回路とＡｕリボ
ンによって接続するための接続パッドが設けられてお
り、該接続パッドが、Ｃｕを主成分とする導体層の表面
にＮｉメッキ膜を１〜６μｍ、Ａｕメッキ膜を１．５μ
ｍ以上の厚みで順次形成してなり、さらに前記Ａｕリボ
ンと接続される接続パッドの幅を接続されるＡｕリボン
の幅よりも２０μｍ以上大きくすることを特徴とするも
のである。That is, according to the present invention, there is provided a wiring board in which a wiring circuit layer containing Cu as a main component is formed on at least the surface of an insulating substrate made of a glass ceramic sintered body. A connection pad for connecting to another electric circuit by an Au ribbon is provided in the portion, and the connection pad is formed by coating a Ni plating film of 1 to 6 μm and an Au plating film on a surface of a conductor layer mainly containing Cu. 1.5μ
m, and the width of the connection pad connected to the Au ribbon is set to be 20 μm or more larger than the width of the Au ribbon connected to the Au ribbon.

【００１７】本発明によれば、接続パッドにおけるＮｉ
メッキ膜上のＡｕメッキ膜の厚みを１．５μｍ以上と従
来よりも厚くすることによって、半導体素子実装の熱処
理時に下地のＮｉメッキ膜中のＮｉがＡｕメッキ膜最表
面まで拡散するのを抑え、Ａｕメッキ表面にＮｉが露出
することを防止することができ、これによって半導体素
子実装の熱処理後において良好なＡｕリボンとのボンデ
ィング性が得られる。According to the present invention, Ni in the connection pad
By increasing the thickness of the Au plating film on the plating film to 1.5 μm or more than before, it is possible to suppress the diffusion of Ni in the underlying Ni plating film to the outermost surface of the Au plating film during the heat treatment of semiconductor element mounting, It is possible to prevent Ni from being exposed on the Au plating surface, whereby good bonding properties with the Au ribbon can be obtained after the heat treatment for mounting the semiconductor element.

【００１８】また、用いられるＡｕリボンとしては、そ
の厚みが２０〜５０μｍ、幅が５０〜３００ｍｍである
ことが望ましい。The Au ribbon to be used preferably has a thickness of 20 to 50 μm and a width of 50 to 300 mm.

【００１９】なお、配線回路層および接続パッドのＣｕ
を主成分とする導体層は、いずれも前記絶縁基板と同時
焼成して形成されてなることが望ましい。The wiring circuit layer and the connection pad Cu
It is preferable that all of the conductor layers containing as a main component are formed by simultaneous firing with the insulating substrate.

【００２０】[0020]

【発明の実施の形態】以下、本発明の配線基板の実施形
態を図面を用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the wiring board of the present invention will be described with reference to the drawings.

【００２１】図１は、本発明の配線基板の構造を説明す
るための概略断面図である。図１の配線基板Ａによれ
ば、絶縁基板１の表面および内部には複数の配線回路層
２が形成されており、また、異なる層の配線回路層２
は、ビアホール導体３によって電気的に接続され、所定
の電気回路を形成している。また、絶縁基板１の表面に
は半導体素子４が搭載され、半導体素子４の電極４ａ
と、絶縁基板１表面に形成された電極パッド５とはワイ
ヤ６によって電気的に接続されている。FIG. 1 is a schematic sectional view for explaining the structure of a wiring board according to the present invention. According to the wiring board A of FIG. 1, a plurality of wiring circuit layers 2 are formed on the surface and inside of the insulating substrate 1.
Are electrically connected by the via-hole conductor 3 to form a predetermined electric circuit. The semiconductor element 4 is mounted on the surface of the insulating substrate 1, and the electrode 4a of the semiconductor element 4 is provided.
And the electrode pads 5 formed on the surface of the insulating substrate 1 are electrically connected by wires 6.

【００２２】また、配線基板Ａの端部には、この配線基
板Ａを他の電気回路、例えば、他の配線基板Ａ’と接続
するための接続パッド７が形成されている。この接続パ
ッド７は、Ａｕリボン８によって、配線基板Ａ’の端部
に同様に形成された接続パッド７’と電気的に接続され
ている。At the end of the wiring board A, a connection pad 7 for connecting the wiring board A to another electric circuit, for example, another wiring board A 'is formed. The connection pad 7 is electrically connected by an Au ribbon 8 to a connection pad 7 'similarly formed at the end of the wiring board A'.

【００２３】本発明によれば、絶縁基板１は、ガラスセ
ラミック焼結体からなる。ガラスセラミック焼結体は、
ホウケイ酸系ガラス、例えばＳｉＯ2−Ｂ2Ｏ3系ガラ
ス、ＳｉＯ2−Ｂ2Ｏ3−Ａｌ2Ｏ3系ガラス、ＳｉＯ2−Ｂ
2Ｏ3−Ａｌ2Ｏ3−ＲＯ系ガラス（ＲＯ：２価の金属酸化
物）の群から選ばれる少なくとも１種のガラスと、セラ
ミックフィラー、例えばアルミナ、シリカ、ジルコニ
ア、石英、ムライト、フォルステライト、エンスタタイ
ト、クリストバライトの群から選ばれる少なくとも１種
のフィラーとからなる混合物を、所定形状に成形し、焼
成したものである。According to the present invention, the insulating substrate 1 is made of a sintered glass ceramic. The glass ceramic sintered body is
Borosilicate glass, for example, SiO 2 —B 2 O 3 glass, SiO 2 —B 2 O 3 —Al 2 O 3 glass, SiO 2 —B
At least one glass selected from the group of 2 O 3 —Al 2 O 3 —RO glass (RO: divalent metal oxide) and a ceramic filler, for example, alumina, silica, zirconia, quartz, mullite, forsterite A mixture comprising at least one filler selected from the group consisting of enstatite and cristobalite is formed into a predetermined shape and fired.

【００２４】図２は、（ａ）本発明の配線基板における
接続パッドの拡大断面図と、（ｂ）その平面図である。
図２に示すように、本発明によれば、接続パッド７は、
Ｃｕを主成分とする導体層７ａと、Ｎｉメッキ膜７ｂ
と、Ａｕメッキ膜７ｃとの積層体から構成されている。FIGS. 2A and 2B are an enlarged sectional view of a connection pad on the wiring board of the present invention and a plan view thereof.
As shown in FIG. 2, according to the present invention, the connection pad 7
A conductor layer 7a mainly composed of Cu and a Ni plating film 7b
And an Au plating film 7c.

【００２５】本発明によれば、上記接続パッド７におけ
るＮｉメッキ膜７ｂの厚みが、１〜６μｍ、特に２〜５
μｍ、Ａｕメッキ膜７ｃの厚みが１．５μｍ以上、特に
２μｍ以上であることが重要である。According to the present invention, the thickness of the Ni plating film 7b in the connection pad 7 is 1 to 6 μm, particularly 2 to 5 μm.
It is important that the thickness of the Au plating film 7c is 1.5 μm or more, particularly 2 μm or more.

【００２６】即ち、Ｎｉメッキ膜の厚みが１μｍよりも
薄いと、Ｃｕ導体上に緻密なＮｉメッキ膜を形成するこ
とができなくなり、６μｍよりも厚いと耐熱性試験時に
膨れが生じやすくなり、またメッキ膜の応力によりＣｕ
導体の接続パッドの接合強度が低下するためである。That is, if the thickness of the Ni plating film is thinner than 1 μm, it becomes impossible to form a dense Ni plating film on the Cu conductor, and if it is thicker than 6 μm, swelling tends to occur during a heat resistance test. Cu due to the stress of the plating film
This is because the bonding strength of the connection pad of the conductor is reduced.

【００２７】また、Ａｕメッキ膜の厚みが１．５μｍよ
りも薄いと、素子の実装工程などの熱処理によって下地
層であるＮｉメッキ膜中のＮｉがＡｕメッキ膜中に拡散
して、Ａｕメッキ膜の表面にＮｉが浮き出て酸化し、こ
れがＡｕリボンとの接続性を損ないＡｕリボンと接続パ
ッドとの接着性を大きく劣化させてしまうためである。When the thickness of the Au plating film is smaller than 1.5 μm, Ni in the Ni plating film as a base layer is diffused into the Au plating film by heat treatment such as an element mounting process, and the Au plating film is formed. This is because Ni emerges on the surface of the substrate and oxidizes, thereby impairing the connectivity with the Au ribbon and greatly deteriorating the adhesion between the Au ribbon and the connection pads.

【００２８】また、本発明によれば、図２（ｂ）に示す
ように、Ａｕリボン８と接続される接続パッド７の幅ｘ
を接続されるＡｕリボン８の幅ｙよりも２０μｍ以上大
きくすることが重要である。これは幅ｘと幅ｙとの差が
２０μｍよりも小さいとボンディング時にリボン端部が
接続パッド端部に近接することによって、リボンに加わ
る応力が接続パッド端部に直接負荷されやすくなる結
果、接続パッドの端部から剥がれが発生してしまうため
である。特に、この幅の差（ｘ−ｙ）は４０μｍ以上で
あることが望ましい。According to the present invention, as shown in FIG. 2B, the width x of the connection pad 7 connected to the Au ribbon 8 is set.
It is important to make the width 20 μm or more larger than the width y of the Au ribbon 8 to be connected. If the difference between the width x and the width y is smaller than 20 μm, the stress applied to the ribbon is likely to be directly applied to the connection pad end because the ribbon end is close to the connection pad end during bonding. This is because peeling occurs from the end of the pad. In particular, it is desirable that the difference (xy) between the widths is 40 μm or more.

【００２９】また、ガラスセラミック材料の熱膨張係数
は導体材料の銅の熱膨張係数よりもかなり低い場合が一
般的である。このため、接続パッドの端部には引張り応
力が残留しており、パッドの端部に引張り負荷がかかる
ような場合においても接続パッドが剥がれやすくなる。
そのため、接続パッドの端部または周囲を絶縁基板と同
じガラスセラミック材料で一部被覆することによって、
より接続パッドのボンディング強度を高めることもでき
る。The thermal expansion coefficient of the glass ceramic material is generally much lower than that of copper as the conductor material. For this reason, a tensile stress remains at the end of the connection pad, and the connection pad is easily peeled off even when a tensile load is applied to the end of the pad.
Therefore, by partially covering the end or periphery of the connection pad with the same glass ceramic material as the insulating substrate,
The bonding strength of the connection pad can be further increased.

【００３０】また、本発明の配線基板は、特に配線基板
の表面に半導体素子４を実装してなる、いわゆる半導体
素子収納用パッケージに特に有用である。とりわけ、半
導体素子４をＡｕ−Ｓｎなどのロウ材９によって実装し
てなる場合に好適である。Further, the wiring board of the present invention is particularly useful for a so-called semiconductor element housing package in which the semiconductor element 4 is mounted on the surface of the wiring board. In particular, it is suitable when the semiconductor element 4 is mounted with a brazing material 9 such as Au-Sn.

【００３１】マイクロ波やミリ波の高周波領域において
使用される通信用途のパッケージにおいては、半導体素
子４をＡｕ−Ｓｎ共晶ロウで実装することが多い。Ａｕ
−Ｓｎ共晶ロウ材は２８０℃に共晶点を持ち、通常は３
００〜３３０℃の高温で実装処理が行われる。In a package for communication used in a high frequency range of microwaves or millimeter waves, the semiconductor element 4 is often mounted with an Au-Sn eutectic solder. Au
-Sn eutectic brazing material has a eutectic point at 280 ° C.
The mounting process is performed at a high temperature of 00 to 330 ° C.

【００３２】このように、高い温度で実装処理が施され
る結果、Ｎｉメッキ膜およびＡｕメッキ膜を形成した後
に素子の実装を上記の高温で行なうと、ＮｉのＡｕメッ
キ膜への拡散速度が大きくなり、接続パッド７へのＡｕ
リボン８の接続不良が発生しやすくなるが、本発明に従
えば、このようなＮｉの拡散による不良を防止すること
ができる。As described above, the mounting process is performed at a high temperature. As a result, when the device is mounted at the above-described high temperature after forming the Ni plating film and the Au plating film, the diffusion rate of Ni into the Au plating film is increased. Au becomes large and the connection pad 7
Although the connection failure of the ribbon 8 is likely to occur, according to the present invention, such a failure due to the diffusion of Ni can be prevented.

【００３３】さらには、Ａｕ−Ｓｎロウ材による実装処
理が繰り返し行なわれる場合、即ち、配線基板の表面に
複数の半導体素子をＡｕ−Ｓｎロウ材によって繰り返し
実装処理が行なわれる場合、複数個の素子を位置精度良
くパッケージに実装するためには通常の単一の半導体素
子を実装する場合に比べて長い時間を必要とするため、
高温での加熱時間も同時に長くなるためにＮｉの拡散性
も顕著であるが、この場合も、Ｎｉの拡散性を考慮して
Ａｕメッキ膜７ｃの厚みを厚くすることによって、Ｎｉ
の拡散による不良の発生を防止することが可能となる。Further, when the mounting process using the Au-Sn brazing material is repeatedly performed, that is, when a plurality of semiconductor elements are repeatedly mounted on the surface of the wiring board using the Au-Sn brazing material, the plurality of devices are mounted. Since it takes a longer time to mount on a package with high positional accuracy than when mounting a normal single semiconductor element,
The diffusion time of Ni is remarkable because the heating time at a high temperature is also increased at the same time. In this case, too, the thickness of the Au plating film 7c is increased by considering the diffusion property of Ni.
It is possible to prevent the occurrence of a defect due to the diffusion of the metal.

【００３４】なお、かかる配線基板においては、配線回
路層２、ビアホール導体３、電極パッド５ならびに接続
パッド７におけるＣｕ導体層７ａはいずれも絶縁基板１
と同時焼成して形成されたものであることが望ましい。In this wiring board, the wiring circuit layer 2, the via-hole conductor 3, the electrode pad 5, and the Cu conductor layer 7a in the connection pad 7 are all provided on the insulating substrate 1.
It is desirable to be formed by simultaneous firing.

【００３５】そこで、本発明の配線基板の製造方法につ
いて説明すると、前述したガラス成分、フィラー成分と
の混合物を成形したグリーンシートに、穴あけし、Ｃｕ
導体ペーストを充填する、そして、シート表面に所定の
パターンにＣｕ導体ペーストを印刷塗布した後に、水蒸
気を含有する窒素雰囲気中、１０００℃以下の温度で焼
成する。The method of manufacturing a wiring board according to the present invention will now be described. A green sheet formed with a mixture of the above-mentioned glass component and filler component is formed by piercing a green sheet.
After filling the conductive paste with the Cu conductive paste in a predetermined pattern on the sheet surface, the sheet is fired in a nitrogen atmosphere containing water vapor at a temperature of 1000 ° C. or less.

【００３６】その後、基板表面の接続パッド７における
Ｃｕ導体層７ａの表面に、１〜６μｍのＮｉメッキ膜７
ｂを、さらに１．５μｍ以上の厚みのＡｕメッキ膜７ｃ
を形成する。Thereafter, a 1-6 μm Ni plating film 7 is formed on the surface of the Cu conductor layer 7a in the connection pad 7 on the substrate surface.
b is further plated with an Au plating film 7c having a thickness of 1.5 μm or more.
To form

【００３７】また、半導体素子４を実装する場合には、
上記のＡｕメッキ処理後に、半導体素子４が実装され
る。半導体素子４の実装は、上述したように、Ａｕ−Ｓ
ｎロウ材９によって単一、あるいは複数個実装される。When the semiconductor element 4 is mounted,
After the above-described Au plating, the semiconductor element 4 is mounted. As described above, the mounting of the semiconductor element 4 is performed using Au-S
A single or a plurality of components are mounted by the n brazing material 9.

【００３８】その後、例えば、半導体素子４の電極４ａ
と配線基板Ａの電極パッド５とをＡｕワイヤ６によって
接続したり、配線基板Ａ表面の端部に設けられた接続パ
ッド７にＡｕリボン８が熱圧着により接合され、配線基
板Ａは、他の電気回路と接続される。Thereafter, for example, the electrode 4a of the semiconductor element 4
And the electrode pad 5 of the wiring board A are connected by the Au wire 6, or the Au ribbon 8 is bonded to the connection pad 7 provided at the end of the surface of the wiring board A by thermocompression bonding. Connected to electrical circuit.

【００３９】[0039]

【実施例】ＳｉＯ2−Ｂ2Ｏ3−Ａｌ2Ｏ3−ＭｇＯ−Ｚｎ
Ｏ系のガラス粉末：６４重量部、珪酸ストロンチウム粉
末、シリカ粉末からなるセラミックフィラー：３６重量
部とを混合してなるガラスセラミック混合物にアクリル
バインダー、可塑剤、溶剤を加えて作製したスラリーを
厚み０．３ｍｍのシート状に成形した。グリーンシート
にＣｕを主成分とする導体ペーストで焼成後に０．２×
０．５ｍｍの寸法になるように長方形のパターンを印刷
し、このシートを最上層として４層積層した後に、水蒸
気を含有する窒素雰囲気中で９３０℃×１時間の焼成を
行い、銅導体パッドを有するガラスセラミック基板を得
た。表層のＣｕ導体に無電解Ｎｉメッキおよび無電解Ａ
ｕメッキを表１の厚みで施した。EXAMPLES SiO 2 -B 2 O 3 -Al 2 O 3 -MgO-Zn
A slurry prepared by adding an acrylic binder, a plasticizer, and a solvent to a glass-ceramic mixture obtained by mixing an O-based glass powder: 64 parts by weight, a ceramic filler composed of strontium silicate powder, and silica powder: 36 parts by weight is used. It was formed into a 0.3 mm sheet. After firing on a green sheet with a conductor paste containing Cu as a main component, 0.2 ×
A rectangular pattern was printed so as to have a dimension of 0.5 mm, and four sheets were laminated with this sheet as the uppermost layer, and then fired at 930 ° C. × 1 hour in a nitrogen atmosphere containing water vapor to form a copper conductor pad. A glass ceramic substrate was obtained. Electroless Ni plating and electroless A on the surface Cu conductor
u plating was applied to the thickness shown in Table 1.

【００４０】その後、Ａｕメッキ後の基板に、Ａｕ−Ｓ
ｎロウ材による半導体素子実装の熱処理を想定して、大
気中、３１５℃×１０分の熱処理を行った。熱処理後の
Ａｕメッキ膜表面をオージェ電子分光分析し、Ａｕのピ
ークＩ2（Ａｕ）に対するＮｉのピークＩ1（Ｎｉ）のピ
ーク強度比Ｉ1（Ｎｉ）／Ｉ2（Ａｕ）を計算し、Ａｕメ
ッキ表面におけるＮｉの拡散量の指標とした。Thereafter, the Au-plated substrate is plated with Au-S
Assuming a heat treatment for mounting the semiconductor element with the n brazing material, the heat treatment was performed at 315 ° C. × 10 minutes in the air. The Au plating film surface Auger electron spectroscopy after heat treatment, to calculate a peak intensity ratio I 1 of the peak of Ni to the peak of the Au I 2 (Au) I 1 (Ni) (Ni) / I 2 (Au), It was used as an index of the amount of diffusion of Ni on the Au plating surface.

【００４１】また、熱処理後のＡｕメッキ表面に、０．
１ｍｍ幅のＡｕリボンを４５０℃×２秒、０．１５ｋｇ
ｆの条件で熱圧着によりループ形状に接合した。Further, the surface of the Au plating after the heat treatment is coated with 0.1.
0.15kg of 1mm width Au ribbon at 450 ℃ x 2 seconds
Under the condition of f, bonding was performed in a loop shape by thermocompression bonding.

【００４２】リボンボンディング性の評価方法として
は、ループ最上部にフックを引掛け垂直方向に引張り試
験を行い、リボンが切断、または剥離した時の荷重をボ
ンディング強度とした。ボンディング強度の評価結果
（破壊の形態）を表１に併せて示す。As a method of evaluating the ribbon bonding property, a hook was hooked on the uppermost portion of the loop, a tensile test was performed in the vertical direction, and the load when the ribbon was cut or peeled was taken as the bonding strength. Table 1 also shows the evaluation results of the bonding strength (forms of destruction).

【００４３】[0043]

【表１】 [Table 1]

【００４４】表１の結果から明らかなように、Ａｕメッ
キ厚みが厚くするに従い、Ａｕメッキ表面におけるＮｉ
量は減少しそれに伴いボンディング強度も大きくなり、
Ａｕメッキの厚みを１．５μｍ以上とすることにより９
０ｇ以上と極端にボンディング強度が向上し、破壊モー
ドはリボン切断となった。これは１．５μｍ付近でＮｉ
の拡散の限界があり、１．５μｍ以上とすることによっ
てＮｉ量が急激に減少したためである。As is evident from the results in Table 1, as the Au plating thickness increases, the Ni plating on the Au plating surface increases.
The amount decreases and the bonding strength increases accordingly,
By setting the thickness of the Au plating to 1.5 μm or more, 9
The bonding strength was extremely improved to 0 g or more, and the breaking mode was ribbon cutting. This is because Ni
This is because there is a limit to the diffusion of Ni, and when the thickness is 1.5 μm or more, the amount of Ni sharply decreases.

【００４５】これに対してＡｕメッキ厚みが１．５μｍ
未満の場合（試料Ｎｏ．１，２）は、Ａｕメッキ表面へ
のＮｉの拡散が認められ、試料Ｎｏ．１では、ボンディ
ングができず、試料Ｎｏ．２ではリボンボンディング強
度が低く、破壊モードがＡｕメッキとリボンの界面剥が
れになっていた。On the other hand, the Au plating thickness is 1.5 μm
In the case of Sample No. 1 and Sample No. 2 (Sample Nos. 1 and 2), diffusion of Ni to the Au plating surface was observed. In the case of sample No. 1, bonding was not possible, and In No. 2, the ribbon bonding strength was low, and the destruction mode was peeling at the interface between the Au plating and the ribbon.

【００４６】また、Ｎｉメッキの厚みが１μｍよりも小
さい場合（試料Ｎｏ．６）ではＣｕ導体上に緻密なＮｉ
−Ａｕメッキ膜を形成できず、Ａｕメッキ膜とＡｕリボ
ンの界面剥がれによりボンディング強度が低く、６μｍ
よりも厚い場合（試料Ｎｏ．１０）では３１５℃×１０
ｍｉｎの前処理時に耐熱膨れが一部発生しており、破壊
モードがＣｕ導体パッド剥がれとなるものが発生しボン
ディング強度が低下した。When the thickness of the Ni plating is smaller than 1 μm (Sample No. 6), the dense Ni
-The Au plating film could not be formed, and the bonding strength was low due to the interface peeling between the Au plating film and the Au ribbon.
315 ° C. × 10 in the case of being thicker (sample No. 10)
During the pretreatment for min, some heat-resistant blisters were generated, and some of the destruction modes resulted in peeling off of the Cu conductor pads, resulting in reduced bonding strength.

【００４７】実施例２実施例１において、幅０．１ｍｍ
のＡｕリボンと接続する接続パッドにおける幅を表２の
ように変化させるとともに、Ｃｕ導体表面のＮｉメッキ
膜を３μｍ、Ａｕメッキ膜を２μｍと一定にして実施例
１と同様の評価を行なった。Example 2 The same method as in Example 1 except that the width was 0.1 mm
The width of the connection pad connected to the Au ribbon was changed as shown in Table 2, and the Ni plating film on the Cu conductor surface was fixed at 3 μm and the Au plating film was fixed at 2 μm.

【００４８】[0048]

【表２】 [Table 2]

【００４９】その結果、接続パッド幅ｘがＡｕリボン幅
ｙよりも２０μｍ以上大きい場合には、ボンディング強
度は９０ｇ以上となり、破壊モードはリボン切断となっ
た。これに対して、Ｃｕ導体パッド幅をＡｕリボン幅ｙ
の差（ｘ−ｙ）が２０μｍ未満の場合（試料Ｎｏ．６，
７）は、Ｃｕ導体パッド剥がれのモードが生じ、ボンデ
ィング強度が低くなった。As a result, when the connection pad width x was larger than the Au ribbon width y by 20 μm or more, the bonding strength was 90 g or more, and the breaking mode was ribbon cutting. On the other hand, the Cu conductor pad width is changed to the Au ribbon width y.
Is smaller than 20 μm (sample No. 6,
In 7), a mode in which the Cu conductor pad was peeled off occurred, and the bonding strength was lowered.

【００５０】[0050]

【発明の効果】以上詳述した通り、本発明の配線基板に
おいては、Ａｕ−Ｓｎロウ材による長時間の半導体素子
の実装後においても安定したＡｕリボンのボンディング
性が得られ、マイクロ波やミリ波等の高周波領域におけ
る通信用途のパッケージに適した配線基板を提供でき
る。As described above in detail, in the wiring board of the present invention, a stable Au ribbon bonding property can be obtained even after a long-time mounting of a semiconductor element by using an Au-Sn brazing material, and a microwave or millimeter A wiring board suitable for a package for communication in a high frequency region such as a wave can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の配線基板の一例を説明するための概略
断面図である。FIG. 1 is a schematic cross-sectional view for explaining an example of a wiring board of the present invention.

【図２】（ａ）本発明の配線基板における接続パッドの
拡大断面図と、（ｂ）その平面図である。2A is an enlarged sectional view of a connection pad on a wiring board according to the present invention, and FIG. 2B is a plan view thereof.

【符号の説明】[Explanation of symbols]

１・・・絶縁基板 ２・・・配線回路層 ３・・・ビアホール導体 ４・・・半導体素子 ５・・・電極パッド ６・・・Ａｕワイヤ ７・・・接続パッド ８・・・Ａｕリボン ９・・・Ａｕ−Ｓｎロウ材 DESCRIPTION OF SYMBOLS 1 ... Insulating substrate 2 ... Wiring circuit layer 3 ... Via hole conductor 4 ... Semiconductor element 5 ... Electrode pad 6 ... Au wire 7 ... Connection pad 8 ... Au ribbon 9 ... Au-Sn brazing material

───────────────────────────────────────────────────── フロントページの続き (72)発明者 児玉 和善 鹿児島県国分市山下町１番４号 京セラ株 式会社総合研究所内 Ｆターム(参考） 5F044 AA02 EE04 EE06 5J011 DA11  ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazuyoshi Kodama 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima F-term in Kyocera Research Institute (reference) 5F044 AA02 EE04 EE06 5J011 DA11

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】ガラスセラミック焼結体からなる絶縁基板
の少なくとも表面にＣｕを主成分とする配線回路層が被
着形成されてなる配線基板において、該配線基板の端部
に他の電気回路とＡｕリボンによって接続するための接
続パッドが設けられており、該接続パッドが、Ｃｕを主
成分とする導体層の表面にＮｉメッキ膜を１〜６μｍ、
Ａｕメッキ膜を１．５μｍ以上の厚みで順次形成してな
るとともに、前記Ａｕリボンと接続される接続パッドの
幅がＡｕリボンの幅よりも２０μｍ以上大きいことを特
徴とする配線基板。1. A wiring board having a wiring circuit layer mainly composed of Cu adhered to at least a surface of an insulating substrate made of a glass ceramic sintered body, wherein another electric circuit is connected to an end of the wiring board. A connection pad for connection by an Au ribbon is provided, and the connection pad has a Ni plating film of 1 to 6 μm on a surface of a conductor layer containing Cu as a main component.
A wiring substrate, wherein an Au plating film is sequentially formed with a thickness of 1.5 μm or more, and a width of a connection pad connected to the Au ribbon is 20 μm or more larger than a width of the Au ribbon. 【請求項２】前記Ａｕリボンの厚みが２０〜５０μｍ、
幅が５０〜３００μｍのＡｕリボンによって接続される
請求項１記載の配線基板。2. The Au ribbon has a thickness of 20 to 50 μm.
The wiring board according to claim 1, wherein the wiring board is connected by an Au ribbon having a width of 50 to 300 m. 【請求項３】前記配線回路層および接続パッドのＣｕを
主成分とする導体層が、前記絶縁基板と同時焼成して形
成されてなる請求項１または請求項２記載の配線基板。3. The wiring board according to claim 1, wherein the conductive layer mainly containing Cu of the wiring circuit layer and the connection pad is formed by simultaneous firing with the insulating substrate. 【請求項４】前記絶縁基板の表面に半導体素子が実装さ
れ、前記接続パッドが、配線回路層を介して半導体素子
と接続されていることを特徴とする請求項１乃至請求項
３のいずれか記載の配線基板。4. The semiconductor device according to claim 1, wherein a semiconductor element is mounted on a surface of the insulating substrate, and the connection pad is connected to the semiconductor element via a wiring circuit layer. The wiring board as described. 【請求項５】前記半導体素子が、Ａｕ−Ｓｎろう材によ
って配線基板表面に実装されていることを特徴とする請
求項４記載の配線基板。5. The wiring board according to claim 4, wherein the semiconductor element is mounted on the surface of the wiring board by using an Au—Sn brazing material. 【請求項６】ガラスセラミック焼結体からなる絶縁基板
の少なくとも表面にＣｕを主成分とする配線回路層が被
着形成されてなる配線基板と他の電気回路との接続構造
において、該配線基板の端部に設けられた接続パッド
と、他の電気回路の接続パッドとをＡｕリボンによって
接続してなり、前記配線基板の接続パッドが、Ｃｕを主
成分とする導体層の表面にＮｉメッキ膜を１〜６μｍ、
Ａｕメッキ膜を１．５μｍ以上の厚みで順次形成してな
るとともに、前記配線基板の接続パッドの幅が、Ａｕリ
ボンの幅よりも２０μｍ以上大きいことを特徴とする配
線基板の接続構造。6. A connection structure between a wiring board having a wiring circuit layer mainly composed of Cu adhered and formed on at least the surface of an insulating substrate made of a glass ceramic sintered body and another electric circuit. A connection pad provided at an end of the wiring board and a connection pad of another electric circuit are connected by an Au ribbon, and the connection pad of the wiring board is formed of a Ni plating film on a surface of a conductor layer containing Cu as a main component. From 1 to 6 μm,
A connection structure for a wiring board, wherein an Au plating film is sequentially formed with a thickness of 1.5 μm or more, and a width of a connection pad of the wiring board is larger than a width of the Au ribbon by 20 μm or more. 【請求項７】前記Ａｕリボンの厚みが２０〜５０μｍ、
幅が５０〜３００ｍｍであることを特徴とする請求項６
記載の配線基板の接続構造。7. The Au ribbon has a thickness of 20 to 50 μm,
The width is 50 to 300 mm.
The connection structure of the wiring board described. 【請求項８】前記配線回路層および接続パッドのＣｕを
主成分とする導体層が、前記絶縁基板と同時焼成して形
成されてなる請求項６または請求項７記載の配線基板の
接続構造。8. The wiring board connection structure according to claim 6, wherein the wiring circuit layer and the connection pad, the conductor layer containing Cu as a main component, are formed by simultaneous firing with the insulating substrate. 【請求項９】前記絶縁基板の表面に半導体素子が実装さ
れ、前記接続パッドが、配線回路層を介して半導体素子
と接続されていることを特徴とする請求項６乃至請求項
８のいずれか記載の配線基板の接続構造。9. The semiconductor device according to claim 6, wherein a semiconductor element is mounted on a surface of the insulating substrate, and the connection pad is connected to the semiconductor element via a wiring circuit layer. The connection structure of the wiring board described. 【請求項１０】前記半導体素子が、Ａｕ−Ｓｎろう材に
よって配線基板表面に実装されていることを特徴とする
請求項９記載の配線基板の接続構造。10. The wiring board connection structure according to claim 9, wherein the semiconductor element is mounted on the surface of the wiring board with an Au—Sn brazing material.
JP2000197266A 2000-06-29 2000-06-29 Wiring board and connection structure therefor Pending JP2002016176A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2008093626A1 (en) * 2007-02-01 2010-05-20 株式会社村田製作所 Chip element and manufacturing method thereof
WO2013179205A1 (en) * 2012-05-29 2013-12-05 Visic Technologies Ltd. Semiconductor die package
CN105895606A (en) * 2014-12-29 2016-08-24 飞思卡尔半导体公司 Encapsulated semiconductor device provided with ribbonwire
US9532475B2 (en) 2013-03-18 2016-12-27 Fujitsu Limited High-frequency module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2008093626A1 (en) * 2007-02-01 2010-05-20 株式会社村田製作所 Chip element and manufacturing method thereof
WO2013179205A1 (en) * 2012-05-29 2013-12-05 Visic Technologies Ltd. Semiconductor die package
US9532475B2 (en) 2013-03-18 2016-12-27 Fujitsu Limited High-frequency module
EP2782133B1 (en) * 2013-03-18 2020-06-17 Fujitsu Limited High-frequency module
CN105895606A (en) * 2014-12-29 2016-08-24 飞思卡尔半导体公司 Encapsulated semiconductor device provided with ribbonwire

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