JP2002009027A5 - - Google Patents

Claims (6)

In a method for manufacturing a semiconductor device for flattening a film formed on a semiconductor substrate using a fixed abrasive disk in which abrasive grains are fixed with a porous binder composed of resin and pores , the fixed abrasive disk A method of manufacturing a semiconductor device, comprising: flattening using the fixed abrasive disc having a portion containing abrasive grains and a portion not containing abrasive grains in a surface portion of a polished surface. The method of manufacturing a semiconductor device for flattening a film formed on a semiconductor substrate using the abrasive grains fixed abrasive plate immobilized with a porous binding material made of resin and pores, the semiconductor during planarization the method of manufacturing a semiconductor device fabricated by the surface of the substrate is characterized that you planarized by the fixed abrasive plate having a top surface moistened abrasive grains only in a region in contact with the fixed abrasive plate. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the fixed abrasive disc is formed of a divided small tool, and the small tool for forming a polishing surface including the abrasive grains contains abrasive grains. A method for manufacturing a semiconductor device, characterized in that abrasive grains are not contained in a small tool that forms a polished surface that does not contain any abrasive grains. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the fixed abrasive disk is formed in a disk shape, and a portion not containing abrasive grains is formed in an inner peripheral portion and an outer peripheral portion thereof. A method for manufacturing a semiconductor device, characterized in that flattening is carried out using the above-mentioned fixed abrasive disc in which a portion containing abrasive grains is formed only in a central portion sandwiched between the above . 2. The method for manufacturing a semiconductor device according to claim 1, wherein a position of a wafer holder that holds the semiconductor substrate is set such that an outer peripheral region of a surface to be processed of the semiconductor substrate covers a portion not including abrasive grains of the fixed abrasive disk. A method for manufacturing a semiconductor device, characterized by controlling and processing. In an apparatus for flattening a film formed on a semiconductor substrate using a fixed abrasive disk in which abrasive grains are fixed with a porous binder composed of resin and pores , the fixed abrasive disk is a surface of a polishing surface. A flattening apparatus comprising: a portion that includes abrasive grains at a portion in contact with the surface of a semiconductor substrate; and a portion that does not include abrasive grains at a portion that does not contact the semiconductor substrate .