JPS639406Y2 - - Google Patents

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Publication number
JPS639406Y2
JPS639406Y2 JP1981006579U JP657981U JPS639406Y2 JP S639406 Y2 JPS639406 Y2 JP S639406Y2 JP 1981006579 U JP1981006579 U JP 1981006579U JP 657981 U JP657981 U JP 657981U JP S639406 Y2 JPS639406 Y2 JP S639406Y2
Authority
JP
Japan
Prior art keywords
thermoplastic polyurethane
polisher
pattern mask
mesh
uneven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1981006579U
Other languages
Japanese (ja)
Other versions
JPS56121565U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP1981006579U priority Critical patent/JPS639406Y2/ja
Publication of JPS56121565U publication Critical patent/JPS56121565U/ja
Application granted granted Critical
Publication of JPS639406Y2 publication Critical patent/JPS639406Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】[Detailed explanation of the idea]

本考案は、エツチングもしくはラツピング研削
によつて加工された被加工物たとえばSiの加工面
を鏡面に仕上げる際に用いられる熱可塑性ポリウ
レタンのポリシヤに関する。 一般にSiウエハの製造に際して行なわれるポリ
シングは、ラツピングによつて研磨されたSiウエ
ハ表面の条痕と加工変質層とを除去してその完全
結晶層を平滑な鏡面に仕上げ、Si単結晶の結晶軸
に対して研磨面が一定の角度を維持すると同時に
結晶学的な無欠陥表面を得ることが目的であり、
極めて高精度な加工が要求される。従つて、この
ポリシング用装置はラツプ盤と似たような構造の
ものが用いられ、Siウエハを挾んで上下に対向す
る定盤にポリシヤを固定し、例えばPH9〜PH12程
度のアルカリ水溶液中に100〜200Å程度の二酸化
硅素微粉末が懸濁された研磨液をこれらポリシヤ
とSiウエハとの間に流し込みながらこれらを摩り
合わせるようにしており、このようなポリシヤは
従来のものと区別するためにメカノケミカルポリ
シングと呼称されている。 近年、大規模集積回路の開発によつて直径が10
cm以上の相当大きなSiウエハをダイシングするこ
となくそのまま使用することが多くなつて来てい
るため、その平面度が重視される一方、大量生産
と加工時間の短縮を目標として装置の大形化と加
工圧力の増加とが企図されつつある。このような
観点から均一な厚さを具え且つ加工に有効な表面
構造を均一に有すると共に耐久性に優れた非常に
大形のポリシヤが要求されつつあるが、従来のポ
リシヤはラシヤやビロードやフエルト等の植毛
品,錫や鉛等の金属板、発泡層を表面に形成した
人工皮革や天然の皮革,木材,蝋、或いは繊維物
質にピツチや松脂等を含浸させたもの等が知られ
ており、これらは前述した条件をすべて満足する
ものではなく、特に全面に亘つて加工に有効な表
面構造を均一に有する大形のポリシヤを安価に提
供することは不可能であつた。 従来から知られているように、ポリシヤとして
の要件は研摩剤の保持機能をもたせるためにポリ
シヤの表面に微細な溝,開孔等を設け、また、適
当な硬さをもち、前述の研摩剤保持用の溝などを
形成しやすい材料を選ぶことである。 本考案は、従来のポリシヤの欠点を解消しSiウ
エハ等の固体基板のポリシングに有効な熱可塑性
ポリウレタンの表面に研磨剤の保持機能と加工面
精度に関与する均一な凹凸面を発泡することなく
形成した量産性を考慮した安価な大形ポリシヤを
提供するものである。 この目的を達成する本考案のポリシヤを実現す
るには、化学食刻法により一定模様の凹凸部が表
面に形成された金型を気孔部を含まない熱可塑性
ポリウレタンの表面に押しつけるとともにこの熱
可塑性ポリウレタンを加熱し、前記金型に形成さ
れた凹凸部と対応する凹凸部を該熱可塑性ポリウ
レタンの表面に圧印転写することにより得られ
る。 以下、本考案の実施例を図面によつて詳細に説
明する。 第1図は本考案ポリシヤの実現方法の実施例を
示したもので、あらかじめ平行平板に加工された
気孔部を含まない(発泡していない)単体の熱可
塑性ポリウレタン1とこの熱可塑性ポリウレタン
1の表面に形成されるべき凹凸部2が化学的食刻
法によつて形成されたパターンマスク3とを準備
し、これらを高精度の平面に加工された一対の加
圧板4に挾み込み、前記熱可塑性ポリウレタン1
が軟化する適当な温度にまでこの熱可塑性ポリウ
レタン1を加熱するが、作業能率の点でこれら熱
可塑性ポリウレタン1やパターンマスク3及び加
圧板4をすべて加熱炉内に設置しておく場合に
は、パターンマスク3や加圧板4の熱的変形を避
けるため、これらを金属製のものにしておくこと
が好ましい。又、パターンマスク3と加圧板4と
を一体化して、一方の加圧板4の表面にパターン
マスク3の凹凸部2を刻設しておき、これを金型
として使用することも可能であるが、本実施例の
ように加圧板4とパターンマスク3とを分離でき
るようにした場合には、パターンマスク3の平面
度及び平行度はできるだけ高い精度にしておくこ
とが望ましい。 前記パターンマスク3の凹凸部2の具体的な形
状は、ポリシヤとしての機能を充分果たすことが
できるような形状であれば既知のどのようなパタ
ーンでもよく、第1図中の矢視部を拡大した第
2図に示すような矩形の盲孔を配列したものや、
他の具体例を表わす第3図に示すような円形の貫
通穴を配列したもの等がその代表的な形状の一部
である。 前記加圧板4は、相互に対向してパターンマス
ク3と加圧板4とを押圧する平面が常に平行とな
るように接近し、パターンマスク3の凹凸部2と
対応した凹凸部が熱可塑性ポリウレタン1の表面
に圧印転写させるような適当な圧力を一定時間熱
可塑性ポリウレタン1とパターンマスク3とに負
荷し、これらを空冷や液冷することによつて、表
面にパターンマスク3の凹凸部2と対応した形状
の凹凸部が圧印転写された熱可塑性ポリウレタン
1を得ることができる。 なお、生産能率の向上を目的とした他の実施例
を示す第4図では、熱可塑性ポリウレタン5を挾
圧する一対のワークロール6の一方の外周面に、
前記熱可塑性ポリウレタン5の表面に圧印転写さ
れるべき凹凸部7と対応した形状の凹凸部8を刻
設し、圧延作業のような形式でポリシヤを製造す
れば、極めて長尺のポリシヤを迅速且つ容易に得
ることができる。 次に、本実施例の一具体例を示すとシヨア硬さ
Hsが65〜95の熱可塑性ポリウレタンを厚さ2mm
で一辺の長さが300mmに加工したものと、厚さ0.2
mmで一辺の長さが300mmの耐食性に優れたステン
レス鋼に化学的食刻法により粒度が60メツシユ及
び20メツシユの複合貫通孔からなる凹凸部を刻設
したパターンマスクとを用意し、第1図に示した
ようにポリシヤとなる熱可塑性ポリウレタンを
150℃に加熱すると共に200Kg(1cm2当り約220g)
の荷重を30秒間このポリウレタンとパターンマス
クとに負荷したのちに水冷した所、パターンマス
クの凹凸部に対応した凹凸部がポリウレタンの表
面に約0.1mmの深さで一様に得られた。なお加圧
板の押圧力やその加圧時間、並びに熱可塑性合成
樹脂に対する加圧温度やパターンマスクの肉厚等
を変化させることによつて熱可塑性合成樹脂の表
面に圧印転写される凹凸部の深さを任意に変える
ことが可能である。 上述の具体例で製造したポリシヤを使用して直
径約75mmのSiウエハをコロイダルシリカでポリシ
ングし、その平面度,周縁部のだれの量(縁だ
れ),加工速度,加工面の熱酸化後に生ずる積層
欠陥の平均密度(平均OSF密度)を表に示す。
また同表には従来の人工皮革によるポリシヤによ
る場合の加工精度も比較のため併記した。なお、
パターンマスクの凹凸部の形状は網目状のもので
粒度60メツシユのものと、粒度60メツシユと20メ
ツシユとを複合したものを使用した。なお、シヨ
ア硬さHsが90で凹凸部を刻設しない平滑なポリ
ウレタン製のポリシヤの場合には、加工速度が
0.3μm/時以下となつてポリシヤとしては不適当
であることが判明した。
The present invention relates to a thermoplastic polyurethane polisher used for finishing the processed surface of a workpiece, such as Si, into a mirror finish by etching or wrapping grinding. Polishing, which is generally performed during the manufacture of Si wafers, removes the striations and process-altered layers on the surface of the Si wafer polished by lapping, finishes the perfect crystal layer into a smooth mirror surface, and polishes the crystal axis of the Si single crystal. The purpose is to maintain a constant angle of the polished surface with respect to the surface and at the same time obtain a crystallographically defect-free surface.
Extremely high precision processing is required. Therefore, this polishing device has a structure similar to a lapping plate, in which the Si wafer is held between two sides, and the polisher is fixed on top and bottom opposing surface plates. A polishing liquid in which silicon dioxide fine powder of ~200 Å is suspended is poured between these polishers and the Si wafer to rub them together. To distinguish this polisher from conventional polishers, a mechanical polisher is used. It is called chemical polishing. In recent years, with the development of large-scale integrated circuits, diameters of 10
It is becoming more and more common to use fairly large Si wafers of cm or more as is without dicing, so the flatness of the wafers is becoming more important. Plans are being made to increase processing pressure. From this point of view, there is a growing demand for very large-sized polyshears with uniform thickness, a uniform surface structure that is effective for processing, and excellent durability. Flocked products such as, metal plates made of tin or lead, artificial leather with a foam layer formed on the surface, natural leather, wood, wax, or fiber materials impregnated with pitch, pine resin, etc. are known. However, these do not satisfy all of the above-mentioned conditions, and in particular, it has been impossible to provide a large-sized polisher having a uniform surface structure that is effective for processing over the entire surface at a low cost. As has been known in the past, the requirements for a polisher are to have fine grooves, openings, etc. on the surface of the polisher in order to have an abrasive retention function, and to have an appropriate hardness. The key is to choose a material that makes it easy to form holding grooves. This invention eliminates the drawbacks of conventional polishers and creates a uniform uneven surface on the surface of thermoplastic polyurethane, which is effective for polishing solid substrates such as Si wafers, and has a function of retaining the abrasive and improves the precision of the machined surface without foaming. The present invention provides an inexpensive, large-sized policy that takes mass production into account. In order to realize the polisher of the present invention that achieves this purpose, a mold whose surface has a certain pattern of unevenness formed by chemical etching is pressed onto the surface of a thermoplastic polyurethane that does not contain pores, and this thermoplastic It is obtained by heating polyurethane and coining and transferring, on the surface of the thermoplastic polyurethane, uneven portions corresponding to the uneven portions formed on the mold. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Figure 1 shows an example of the method for realizing the polysier of the present invention, which shows a single thermoplastic polyurethane 1 that does not contain pores (non-foamed) that has been processed into a parallel flat plate in advance, and a thermoplastic polyurethane 1 that has not been foamed. A pattern mask 3 in which the uneven portions 2 to be formed on the surface are formed by chemical etching is prepared, and these are sandwiched between a pair of pressurizing plates 4 processed into a highly accurate plane. Thermoplastic polyurethane 1
The thermoplastic polyurethane 1 is heated to an appropriate temperature at which it becomes soft, but in order to improve work efficiency, if the thermoplastic polyurethane 1, pattern mask 3, and pressure plate 4 are all placed in a heating furnace, In order to avoid thermal deformation of the pattern mask 3 and the pressure plate 4, it is preferable that these are made of metal. Alternatively, it is also possible to integrate the pattern mask 3 and the pressure plate 4, and carve the uneven portions 2 of the pattern mask 3 on the surface of one of the pressure plates 4, and use this as a mold. When the pressure plate 4 and the pattern mask 3 are separable as in this embodiment, it is desirable that the flatness and parallelism of the pattern mask 3 be as accurate as possible. The specific shape of the concavo-convex portion 2 of the pattern mask 3 may be any known pattern as long as it can sufficiently function as a policy. An array of rectangular blind holes as shown in Figure 2,
Some typical shapes include an array of circular through holes as shown in FIG. 3, which shows another specific example. The pressure plate 4 approaches each other so that the planes that press the pattern mask 3 and the pressure plate 4 are always parallel, and the uneven portions corresponding to the uneven portions 2 of the pattern mask 3 are made of thermoplastic polyurethane 1. By applying an appropriate pressure to the thermoplastic polyurethane 1 and the pattern mask 3 for a certain period of time so as to cause coining transfer to the surface of the mask, and cooling them with air or liquid, the surface is made to correspond to the uneven portions 2 of the pattern mask 3. It is possible to obtain a thermoplastic polyurethane 1 in which the uneven portions having the shape of the above are coined and transferred. In addition, in FIG. 4 showing another embodiment aimed at improving production efficiency, on the outer peripheral surface of one of the pair of work rolls 6 that press the thermoplastic polyurethane 5,
If the surface of the thermoplastic polyurethane 5 is carved with uneven portions 8 having a shape corresponding to the uneven portions 7 to be coined and transferred, and the polisher is manufactured by a method such as a rolling operation, extremely long polishers can be produced quickly and easily. can be obtained easily. Next, as a specific example of this embodiment, the shore hardness
2mm thick thermoplastic polyurethane with Hs 65-95
The length of one side is 300mm, and the thickness is 0.2mm.
A pattern mask is prepared in which uneven parts consisting of composite through-holes with a grain size of 60 mesh and 20 mesh are engraved by a chemical etching method on highly corrosion-resistant stainless steel with a side length of 300 mm. As shown in the figure, thermoplastic polyurethane is used as the polisher.
Heat to 150℃ and weigh 200Kg (approximately 220g per 1cm2)
When the polyurethane and the pattern mask were subjected to a load of 30 seconds for 30 seconds and then cooled with water, irregularities corresponding to the irregularities of the pattern mask were uniformly formed on the surface of the polyurethane to a depth of about 0.1 mm. By changing the pressing force of the pressure plate, the pressing time, the pressing temperature for the thermoplastic synthetic resin, the thickness of the pattern mask, etc., the depth of the uneven portion to be coined and transferred to the surface of the thermoplastic synthetic resin can be adjusted. It is possible to change the degree arbitrarily. A Si wafer with a diameter of approximately 75 mm was polished with colloidal silica using the polisher manufactured in the above-mentioned example, and the results were as follows: The average density of stacking faults (average OSF density) is shown in the table.
The same table also shows the processing accuracy when using conventional artificial leather polisher for comparison. In addition,
The shape of the concavo-convex portion of the pattern mask was a mesh-like one with a grain size of 60 mesh, or a combination of grain sizes of 60 mesh and 20 mesh. In addition, in the case of a smooth polyurethane polisher with a shore hardness Hs of 90 and no uneven parts, the machining speed will be lower.
It was found that it was less than 0.3 μm/hour and was unsuitable for use as a polisher.

【表】 このように本考案のポリシヤは、加工が容易な
熱可塑性ポリウレタンの表面に凹凸部を刻設され
た金型を介して加熱成形することにより得られる
ので、安価で且つ量産性が大きく均一な表面構造
の大面積ポリシヤであるから、今後Siウエハが大
形化する状況になる程有用になる。又、本考案に
なるポリシヤは加工精度が高くポリウレタン製で
あるので耐久性の点でも優れており、更に加工前
後の洗浄作業も極めて容易に行なうことができる
等の効果がある。
[Table] As described above, the polyshear of the present invention is obtained by heat-forming thermoplastic polyurethane, which is easy to process, through a mold that has unevenness carved into the surface, so it is inexpensive and highly suitable for mass production. Since it is a large area polisher with a uniform surface structure, it will become more useful as Si wafers become larger in the future. Furthermore, the polisher according to the present invention has high processing accuracy and is made of polyurethane, so it is excellent in durability, and furthermore, cleaning work before and after processing can be performed extremely easily.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案のポリシヤを得る一実施例を示
す斜視図、第2図は第1図中の矢視部拡大図、
第3図はパターンマスクの他の一実施例の形状を
表わす第2図同様の拡大図であり、第4図は他の
一実施例の構成を表わす斜視図である。 図面中、1,5は熱可塑性ポリウレタン、2は
パターンマスクの凹凸部、3はパターンマスク、
4は加圧板、6はワークロール、7は熱可塑性ポ
リウレタンに圧印された凹凸部、8はワークロー
ルの凹凸部である。
FIG. 1 is a perspective view showing an example of obtaining a policy according to the present invention, FIG. 2 is an enlarged view of the part shown by the arrow in FIG.
FIG. 3 is an enlarged view similar to FIG. 2 showing the shape of another embodiment of the pattern mask, and FIG. 4 is a perspective view showing the configuration of another embodiment. In the drawing, 1 and 5 are thermoplastic polyurethane, 2 is the uneven part of the pattern mask, 3 is the pattern mask,
4 is a pressure plate, 6 is a work roll, 7 is an uneven part coined into the thermoplastic polyurethane, and 8 is an uneven part of the work roll.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] シヨア硬さHsが65<Hs<95の範囲の気孔部を
含まない板状の熱可塑性ポリウレタンの表面に粒
度が60メツシユから20メツシユの範囲の一定模様
もしくは粒度が60メツシユから20メツシユの範囲
の一定模様を複数重ねて転写させてなる深さ0.1
mm程度の凹凸部を形成したことを特徴とする熱可
塑性ポリウレタンポリシヤ。
A fixed pattern with a particle size in the range of 60 mesh to 20 mesh or a pattern with particle size in the range of 60 mesh to 20 mesh is formed on the surface of a plate-shaped thermoplastic polyurethane that does not contain pores and has a shore hardness Hs in the range of 65 < Hs < 95. Depth 0.1 created by overlapping and transferring multiple fixed patterns
A thermoplastic polyurethane polisher characterized by having irregularities of about mm size.
JP1981006579U 1981-01-22 1981-01-22 Expired JPS639406Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981006579U JPS639406Y2 (en) 1981-01-22 1981-01-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981006579U JPS639406Y2 (en) 1981-01-22 1981-01-22

Publications (2)

Publication Number Publication Date
JPS56121565U JPS56121565U (en) 1981-09-16
JPS639406Y2 true JPS639406Y2 (en) 1988-03-19

Family

ID=29603249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981006579U Expired JPS639406Y2 (en) 1981-01-22 1981-01-22

Country Status (1)

Country Link
JP (1) JPS639406Y2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0984846B1 (en) * 1997-01-13 2004-11-24 Rodel, Inc. Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern
JP4996767B1 (en) * 2010-11-12 2012-08-08 株式会社Filwel Manufacturing method of holding material for single-side polishing
JP7180976B2 (en) * 2017-12-26 2022-11-30 富士紡ホールディングス株式会社 Polishing pad manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363695A (en) * 1976-11-17 1978-06-07 Hitachi Ltd Method of finish polishing
JPS5373067A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Polisher
JPS5531582A (en) * 1978-08-15 1980-03-05 Ibm Free polishing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363695A (en) * 1976-11-17 1978-06-07 Hitachi Ltd Method of finish polishing
JPS5373067A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Polisher
JPS5531582A (en) * 1978-08-15 1980-03-05 Ibm Free polishing device

Also Published As

Publication number Publication date
JPS56121565U (en) 1981-09-16

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