JP2001110763A5 - - Google Patents

Claims (6)

In the step of planarizing is relative motion between the semiconductor wafer pressed against the polishing tool to the semiconductor wafer the polishing tool to form a pattern on the surface of the semiconductor substrate, the semiconductor wafer held in the wafer holder, the cerium oxide abrasive grains And a circular or ring-shaped polishing tool comprising two or more grindstones made of a substance for binding the abrasive grains, are arranged concentrically, and at least one grindstone among the concentric grindstones is It is simultaneously and independently moved so that the rotation direction is different from that of the other grindstones, and at least two or more of the concentric grindstones are in contact with the surface of the semiconductor wafer to perform planarization polishing. A method for manufacturing a semiconductor device . In the step of pressing the polishing tool against the semiconductor wafer having a pattern formed on the surface of the semiconductor substrate and causing the semiconductor wafer and the polishing tool to move relative to each other and planarize the semiconductor wafer, the semiconductor wafer is held by the wafer holder, and the cerium oxide abrasive A polishing tool including two or more circular grindstones made of a substance for bonding grains and the abrasive grains is disposed on a rotating platen, and the circular grindstone is rotated by the rotating platen. A method of manufacturing a semiconductor device, comprising: rotating in a direction opposite to the direction and performing planarization polishing so that at least two or more of the circular grindstones are in contact with the surface of the semiconductor wafer . 3. The semiconductor wafer flattening method according to claim 1, wherein the semiconductor wafer has a diameter of 200 mm or more. 3. The semiconductor wafer flattening method according to claim 1, wherein a pressure for pressing the semiconductor wafer against a polishing tool is 150 g / cm ² or more. In an apparatus for pressing a polishing tool against a semiconductor wafer having a pattern formed on the surface thereof and causing the semiconductor wafer and the polishing tool to move relative to each other to flatten the pattern, a wafer holder for holding the semiconductor wafer, and a cerium oxide abrasive A polishing tool in which two or more circular or ring-shaped grindstones made of a substance for binding the grains and the abrasive grains are arranged concentrically, and at least one grindstone of the concentric grindstone is Rotating simultaneously and independently so that the direction of rotation differs from that of the other grindstones, and arranging the concentric grindstones so that at least two or more of the concentric grindstones contact the surface of the semiconductor wafer. A semiconductor wafer flattening apparatus. In an apparatus for pressing a polishing tool against a semiconductor wafer having a pattern formed on the surface thereof and causing the semiconductor wafer and the polishing tool to move relative to each other to flatten the pattern, a wafer holder for holding the semiconductor wafer, and a cerium oxide abrasive A polishing tool in which two or more circular grindstones made of a substance for bonding the grains and the abrasive grains are arranged on a rotating platen, and the circular grindstone of the rotating platen The circular grindstone is rotated about the central axis of the circular grindstone in a direction opposite to the rotation direction, and the circular grindstone is rotated and fixed so that at least two or more circular grindstones are in contact with the surface of the semiconductor wafer. A flattening apparatus for a semiconductor wafer, which is arranged on a board .