JP2002008939A - Method of manufacturing ceramic body by selective coating - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of the conventional methods, that the material of a dielectric body is restricted and a large amount of wastes is produced, and then many treatment steps become necessary. SOLUTION: In this method, a ceramic raw material solvent is precipitated in a mask layer and on a conductive material. A gelled material is formed of the precipitated ceramic material solvent, and a ceramic body is formed of the gelled material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to the formation of a ceramic body, and more particularly, to the formation of a ceramic body forming a capacitor.

[0002] The present invention also relates to a method of manufacturing a built-in capacitor multi-chip module.

[0003]

2. Description of the Related Art Capacitors are widespread in the electronics industry. One type of capacitor is a bypass capacitor. In the case of a multi-chip module (MCM), for example, bypass capacitors are used to reduce power supply noise to the chips in the module. The bypass capacitor is located near the IC chip in the multi-chip module.

[0004] Among conventional methods, there is a method in which a dielectric (structure) for a capacitor is formed by anodizing a lower metal (structure). For example, a lower metal contact made from tantalum may be tantalum pentoxide (Ta ₂
O ₅ ) Anodized to form a dielectric. Next, the top metal contact forms Ta ₂ O ₅ to form a capacitor.
Formed on While capacitors formed in this way are efficient, forming a dielectric by anodizing limits the materials that can be used for the capacitor to certain materials. For example, during anodizing, the dielectric is limited to materials that can be obtained from the lower metal body.

In another conventional method, a dielectric for a capacitor is formed by depositing a coating of a dielectric material on an underlying metal body. The photoresist pattern is
Formed on the cover layer. Areas of the cover layer that are not covered by the patterned photoresist layer are selectively etched, leaving a dielectric over the underlying metal. After etching, the photoresist pattern is removed and a top conductive (structure) is formed on the dielectric. When etching a covering dielectric layer in this manner, a large number of wet chemicals are used and a large amount of waste is generated. In addition, multiple processing steps are required to etch the overlying dielectric layer in such a manner.

[0006]

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art in which the dielectric material is limited or a large amount of waste is generated and many processing steps are required. Aim.

[0007]

SUMMARY OF THE INVENTION The present invention relates to a method for manufacturing a ceramic body. The ceramic body is preferably a dielectric ceramic body suitable for use in a capacitor (eg, a bypass capacitor).

According to one embodiment of the present invention, there is provided a method of manufacturing a ceramic body, comprising the steps of: depositing a ceramic raw material solvent in an opening of a mask layer and on a first conductor; and forming a gel body from the deposited ceramic raw material solvent. Forming a ceramic body from the gel body, and forming a second conductor on the ceramic body.

According to another aspect of the present invention, there is provided a method of manufacturing a ceramic body, comprising: forming a patterned liquid-phobic mask layer on a lower structure; and forming a lower structure in the mask layer and on the lower structure. A step of depositing a ceramic raw material solvent for moistening the body, a step of forming a patterned gel body from the deposited ceramic raw material solvent, and a step of forming a ceramic body from the gel body.

By using the method for manufacturing a ceramic body of the present invention, the ceramic body can be efficiently manufactured in a short time without generating a large amount of waste. Further, the ceramic body material can be selected independently of the material of the underlying structure. Therefore, a wide range of materials (for example,
High dielectric constant material) can be selected for the ceramic body. The embodiment of the present invention is particularly suitable for manufacturing a capacitor having a high capacitance.

Further, the present invention is a method for manufacturing an MCM substrate with a built-in capacitor utilizing the property of automatic selection of a wet chemical coating method. According to the manufacturing method of the present invention, a metal oxide having a high relative dielectric constant can be formed, and the width of variation in the thickness of the insulating layer is considerably allowed.

[0012]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. To make the drawing easier to see,
The scale of the drawings is arbitrary.

An embodiment of the present invention relates to a method for manufacturing a ceramic structure. The manufactured ceramic structure has suitable properties. For example, a ceramic structure having dielectric, conductive, or semiconducting properties is manufactured. Also,
The manufactured ceramic structure may have ferroelectric or piezoelectric properties. Ceramic structures have crystalline (eg, perovskite), semi-crystalline, or amorphous properties. If the manufactured ceramic structure is dielectric, the dielectric ceramic structure preferably comprises a material having a high dielectric constant (eg, 10 or higher). Ceramics such as barium titanate and titania have a high dielectric constant. For example, barium titanate has a dielectric constant of 1600 at the Curie temperature. The dielectric constant of titania, a linear ceramic, is about 80.

The formed ceramic structure contains a suitable material, such as a suitable oxide material (eg, a metal oxide). For example, the ceramic structure includes an oxide such as a Ta oxide, a Si oxide, a Ti oxide, a Sr oxide, a Zr oxide, a Ba oxide, or an Al oxide in an appropriate combination of elements. More specific examples of ceramic materials include ABO ₃ type oxides such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ), and tantalum pentoxide (Ta ₂ O ₅ ) and titania (T
metal oxides such as iO ₂ ). The ceramic structure may include suitable dopants that impart desirable properties to the ceramic structure.

The ceramic structure is formed by using a sol-gel method. By using the sol-gel method, the ceramic structure can be efficiently formed in a short time. Compared with some subtractive etch-type processes, there is no need to etch a large amount of material, so there is no large amount of waste. Furthermore, by using the sol-gel method, the formation of the ceramic structure is performed independently of the material of the adjacent layers. The range of dielectric and conductive materials that can be used to make capacitors is wider than in processes such as, for example, anodizing. The sol-gel method, in particular,
It is suitable for forming high dielectric constant ceramic materials containing metal oxides such as titanates and zirconates.

In a preferred embodiment, the ceramic structure is a dielectric and is used for a capacitor. Capacitors can be multi-chip modules or single-chip
Used for chip modules such as modules.
The capacitor is used, for example, as a bypass capacitor for filtering a signal.

In one preferred embodiment, the capacitor is embedded in a dielectric layer to form a capacitor buried film. The multilayer circuit structure is formed on the capacitor buried film, and the chip is mounted on the multilayer circuit structure to form a chip module.

A capacitor manufactured using an embodiment of the present invention has a high capacitance. By increasing the capacitance of the capacitor, the ability of the capacitor to store charge is increased. The capacitance C of the capacitor is the dielectric constant k of the dielectric.
Is multiplied by the area A of the dielectric and is equal to the amount obtained by dividing by the thickness d of the dielectric. That is, C = kA / d.

As can be seen from this relational expression, the capacitance of the capacitor increases by reducing the thickness of the dielectric in the capacitor. However, as the thickness of the dielectric decreases, the severity of defects such as pinholes and contamination in the dielectric increases. The resulting capacitors are less desirable because defects such as pinholes and contamination can have the undesirable consequences of lowering the dielectric breakdown voltage or increasing leakage current. In addition, variations in processing cause variations in the uniformity of the thickness of the dielectric. A slight thickness variation causes a large variation in the capacitance of the formed capacitor. As the thickness of the dielectric decreases, variations in thickness are emphasized and variations in capacitance increase. Another way to increase capacitance is to increase the dielectric area. However, increasing the area of the dielectric increases the size of the manufactured capacitor. Reducing the space occupied by capacitors is desirable because the final product can be smaller.

One preferred way to increase the capacitance of a capacitor is to increase the dielectric constant of the capacitor dielectric. By increasing the dielectric constant of the dielectric within the capacitor, the capacitance of the capacitor is increased without reducing the thickness of the dielectric. Thus, the capacitance of the capacitor is increased without increasing the likelihood that pinholes and contamination in the dielectric will reduce the breakdown voltage or increase the leakage current of the dielectric.

In one typical method of manufacturing a plurality of capacitors, a plurality of first conductors are formed on a support substrate. The support substrate is preferably rigid and can carry a plurality of capacitors. Materials such as glass, ceramic, and rigid polymer materials are used for the support substrate. The support substrate may be temporary or permanent and comprises an etchable material such as aluminum. The support substrate may optionally include internal and external circuits, and pins or bonding wires are attached to the support substrate.

The first conductor constitutes a lower conductor of the capacitor. The first conductor is formed using a suitable additive or subtractive process. Additive processes are typically preferred because they can form smaller features than subtractive. Typical additive processes include electroplating, electroless plating, or sputtering.

An example of the plating process will be described with reference to FIG. In the case of the processing of this example, a thin continuous seed layer (not shown) is deposited on the support substrate 21 before forming the patterned photoresist layer 11 on the support substrate 21. The seed layer is used to help initiate the subsequent plating process used to form the first conductor 22. After the seed layer is deposited, a patterned photoresist layer 11 is formed on the seed layer and the support substrate 21 using a conventional process such as photolithography. The opening 11 (a) exists in the patterned photoresist layer 11. A conductive material is plated in opening 11 (a) to form first conductor 22. After the first conductor 22 is formed, the patterned photoresist layer 11 is removed from the support substrate 21 (for example, peeled off). If present, the seed layer is flushed after the photoresist layer 11 is removed.
Etched. In a typical flash etching step, the first conductor 22 and a seed layer (not shown) are briefly exposed to an etchant to remove a thin seed layer, and a small portion of the first conductor 22 is removed. Removed. During the flash etching process, conductive material is removed from between the first conductors 22 to locally isolate the conductors 22 from each other.

The first conductor 22 may be formed by sputtering. If sputtering is used to form conductor 22, it is not necessary to use a seed layer. Excess conductive material deposited on the upper surface of the patterned photoresist layer 11 is removed together with the patterned photoresist layer 11.

The first conductor 22 includes any suitable conductive material, and may have a single-layer or multilayer structure. For example, the first conductor 22 is made of Cu, Al, T
a, metals such as Ni, Cr, Ag, Au, Pd and P
Noble metals, such as t, and alloys thereof. The first conductor 22 is made of a conductive ceramic (for example, RuO
₂ ) or including doped silicon. The first conductor 22 may be in the form of a single layer of a composite material (two or more layers). For example, the first conductor 22 includes a barrier layer and / or an adhesive layer in addition to a main conductive portion.

After forming the first conductive layer 22, a dielectric ceramic structure 24 is formed on the first conductive layer 22 using a sol-gel method and a mask layer. Referring to FIG.
An example of forming a plurality of dielectric ceramic structures will be described. As shown in FIG. 2A, for example, a mask layer material 12 made of a polymer material is deposited on a support substrate 21 and a first conductor (region) 22. Openings 13 (a) are formed in any suitable manner, including laser drilling or etching. In certain embodiments, the mask layer material 12 is photoimageable and the patterned mask layer 13 is a photoimageable layer (eg,
It is formed by exposing and developing a photoimageable polyimide material or a photoresist. The opening 13 (a) of the photoimageable layer is formed by development. Opening 13 (a) is an isolated aperture having a suitable shape (eg, square or circular), regardless of how it was formed, or opening 13 (a).
(A) is not isolated (in the form of a wiring pattern). Openings 13 (a) have dimensions (eg, length, diameter) of about 100 microns to about 5 mm. Opening 13
2A, a portion of the first conductor 22 is exposed through the mask layer 13. FIG. As shown in FIG. 2B, the area of the opening 13 (a) is smaller than the area of the first conductor 22.

After forming the openings 13 (a), the support substrate 21 is covered with a ceramic raw material solvent (not shown), and the ceramic raw material solvent is
(A). Ceramic raw material solvent
It is deposited in opening 13 (a) using a suitable process such as coating, curtain coating, spray coating, spin coating, roller coating, and the like. After the coating, the precipitate of the ceramic raw material solvent remains in the openings 13 (a) of the patterned mask layer 13.

In order to increase the amount of the ceramic raw material solvent deposited in the opening 13 as much as possible, the first conductor 22
Preferably, it is wetted with a raw material solvent. First conductor 22
Is inherently wettable or treatable by a substance capable of moistening the exposed surface with a raw material solvent. In order to minimize the amount of the ceramic raw material solvent above the patterned mask layer 13, the patterned mask layer 13 is made liquid-phobic (eg, hydrophobic). The ceramic raw material solvent is coated on the patterned mask layer 13, and the ceramic raw material solvent wets the portion of the first conductor 22 exposed through the patterned mask layer 13. The raw material solvent is
It is repelled (water-repellent) by the liquid-phobic surface outside the patterned mask layer 13. The coating of the raw solvent on the substrate is naturally selected because the raw solvent is deposited in the desired areas without being deposited in large amounts in the undesired areas. In the preferred embodiment, the raw solvent is deposited mainly only in the desired areas, so that the method of the embodiment of the present invention does not generate a large amount of waste.

In another embodiment, the patterned mask 13 may not be lyophobic, and the outer surface of the mask layer 13 may be wet. Certain source solvents or derivatives of the source solvents on the outer surface of the mask layer 13 are later removed when the patterned mask layer 13 is removed.

The ceramic raw material solvent may be a sol solvent or a pre-sol solvent. The pre-sol solvent is preferably
Aqueous, and preferably raw materials, solvents, and
Including catalyst. In some embodiments, the source material is an alkoxide. Examples of alkoxides include Si, Ta, Ti, Z
r, V, W, Y, Nb, Ce and Al alkoxides. Examples of suitable solvents include water or an alcohol such as ethanol or polyethylene glycol. Additives such as surfactants are added to the pre-sol solvent to reduce the surface tension of the solvent. After formation of the pre-sol solvent, the pre-sol solvent is deposited on the first conductor 22 to eventually form a dielectric ceramic structure.

In some embodiments, the raw materials include chlorides, such as niobium pentachloride and titanium tetrachloride, and nitrates, such as lead nitrate and magnesium nitrate. By using a mixture of chloride and nitrate, 0.9 Pb (Mg _1/3 Nb _2/3 ) O ₃ -0.1 PbT
Ferroelectric ceramic materials such as iO ₃ can be formed.
Such lead-based titanates exhibit a dielectric constant of 19,206 at room temperature and 1 kHz. For a more detailed description of the proper preparation of this particular ceramic material, see Wan et al., J. Master. Res., Which is incorporated by reference in its entirety.
See Vol. 14, No. 2, Feb. 1999 (pp. 537-545). In another embodiment, the raw materials include barium naphthenate and titanium naphthenate and are used to form a titanate such as barium titanate. A more detailed description of suitable ceramic raw materials solvents, including naphthenates, can be found in Kim,
See J. Mater. Res., Vol. 14, No. 2, Feb. 1999.

After the ceramic raw material solvent is deposited in the opening 13 (a) of the mask layer 13 and on the first conductor 22,
The ceramic raw material solvent is heated (for example, soft-baked) to form the gel structure 23. The gel structure 23 and the subsequently formed dielectric ceramic structure may be in the form of a pattern. Appropriate heating temperatures are used to form the gel structure. Suitable heating temperatures for forming the gel structure are at least about 100 ° C, preferably about 200 ° C to 400 ° C. The heating time may be longer than half an hour to form a gel structure,
Preferably, it is about 1-2 hours. The patterned mask layer 13 is preferably capable of withstanding these processing conditions without decomposition. For example, a patterned mask layer can be deposited at about 300 ° C. to 40
Including materials that can be heated between 0 ° C. Heating is
It is performed in a suitable atmosphere, such as an inert atmosphere, an oxygenated atmosphere, or a reducing atmosphere, as appropriate for the particular ceramic material desired.

After the gel structure 23 has been formed, the gel structure 23 is further heated to form a dielectric ceramic structure 24. For example, the gel structure 23 is sintered to form a dielectric ceramic structure 24. Appropriate heating temperatures are used to furnish the dielectric ceramic structure 24. A suitable heating temperature is at least 400
° C, preferably about 600 ° C to 800 ° C to form the dielectric ceramic structure. The heating time is at least one hour, preferably about 2 to 4 hours, to form the dielectric ceramic structure. Heating is performed in an appropriate atmosphere, such as an inert atmosphere, an oxygenated atmosphere, or a reducing atmosphere, appropriate for the particular ceramic material desired.

The dielectric ceramic structure can be sized appropriately. If a dielectric ceramic structure is used for the capacitor, the dimensions (eg, diameter, length or width) of each dielectric ceramic structure are from about 100 microns to about 5 millimeters, and the thickness is less than about 2 microns ( For example, less than about 1 micron). The dielectric ceramic structure is substantially solid and may be porous.

According to the preferred embodiment, the mask layer 13 is removed from the support substrate 21 before, simultaneously with, or after the formation of the ceramic structure 24. For example,
The mask layer 13 is removed simultaneously with the formation of the dielectric ceramic structure 24 when the gel structure 23 is heated to a high temperature. In this case, the mask layer 13 is decomposed (for example,
(Combustion) and are removed from the support substrate 21 during sintering. Alternatively, the mask layer 13 may be removed after the dielectric ceramic structure 24 has been formed. In this case, for example, after the dielectric ceramic structure 24 is formed, the mask layer 13 is formed.
Is etched or leached with an etchant that is selective for the material of the mask layer 13. If the mask layer 13 is removed after the formation of the dielectric ceramic structure 24, the mask layer 13 can withstand the microphone without decomposition under the processing conditions used during the formation of the dielectric ceramic structure 24. After the mask layer 13 has been removed, the remaining structures are cleaned by solvent or plasma treatment to remove residual mask layer residues.

After converting the gel structure into a ceramic structure, the ceramic structure may be finished using a laser beam to reduce the area of the ceramic structure. A laser beam (not shown) is directed at the edges of the formed ceramic structure to ablate the edges. The lower conductor 22 is used to stop the laser beam during the laser trimming process. Before or after finishing, for example, the properties of the dielectric are tested to determine if the desired capacitance has been achieved. Initial or subsequent laser trimming is performed according to the test data.

After the formation of the dielectric ceramic structure 24, a second conductor 26 is formed on the dielectric ceramic structure 24. In the case of this example, the second conductor 26 constitutes an upper conductor of the capacitor 20. Second conductor 26
Are manufactured in the same manner as the first conductor 22 or in a different manner.

An example of a method for forming the second conductor 26 will be described with reference to FIG. The patterned photoresist layer 15 is formed on the dielectric 24 and the first conductor 22 on the support substrate 21. The patterned photoresist layer 15 is formed in the same or different manner as the photoresist 11 used to form the first conductor 22. The opening 15 (a) is provided in the patterned photoresist layer 15. As shown in FIG. 3A, the size of the openings 15 (a) is smaller than the individual surface area of the dielectric 24, so that a portion of the dielectric 24 is exposed through the patterned photoresist layer 15. .

The second conductor 26 is formed in the opening 15 (a) of the patterned photoresist layer 15 using a process such as electroplating, electrolytic plating, or sputter rig. The area of each of the formed second conductors 26 is smaller than the area of the dielectric ceramic structure 24.
As shown in FIGS. 3B and 3C, the second conductor 26 does not come into contact with the first conductor 22 by forming a structure having a smaller area. After formation of second conductor 26, patterned photoresist layer 15 is removed (eg, stripped).

As shown in FIG. 3C, a plurality of capacitors 20 are formed. As shown in FIG. 3C, the capacitor 20 has a stepped side surface. For example, the lower conductor 22 has the largest planar area,
The upper conductor 26 has a minimum planar area. Lower conductor 2
2 and the upper conductor 26 are separated from each other by a dielectric ceramic structure 24. Capacitor 20 is tested at this point if necessary. Also, conductors 22 and 26,
Alternatively, further laser trimming of the dielectric ceramic structure 24 is performed to obtain the desired capacitor 20.

After the patterned photoresist layer 15 has been removed, the dielectric layer 28
0 is formed. The dielectric layer 28 is made of a suitable material including a polymer material such as polyimide or epoxy-based resin.

The dielectric layer 28 is formed using a suitable process. For example, as shown in FIG. 4A, a dielectric material is deposited on capacitor 20 and support substrate 21 using a process such as spin coating, roller coating, or curtain coating. The dielectric material may be in the form of a preformed sheet laminated on the support substrate 21. After the dielectric material has been deposited on the support substrate 21, the deposited dielectric material is cured to solidify the dielectric layer. After curing, if the cured dielectric layer has an uneven surface, the dielectric layer is polished to form a dielectric layer 28 with a flat surface. Chemical mechanical polishing processes are used to polish the deposited dielectric material to form a flat surface. As shown in FIGS. 4A and 4B, the capacitor is buried in the dielectric layer 28 to form a buried capacitor film.

As shown in FIG. 4A, after polishing, the formed dielectric layer 28 has a flat upper surface,
The formed capacitor structure 20 is covered. Opening 28
(A) is formed in the dielectric layer 28 to obtain a path to the second conductor 26 of the capacitor structure 20. Opening 2
8 (a) is formed using, for example, a laser or an etchant. The conductive material (not shown)
8 (a), providing an electrical path to the capacitor 20. In another embodiment, the dielectric layer 28 shown in FIG.
8 is polished until it is higher or substantially flush with the top surface. Next, the electrical contacts to the exposed second conductor 26 and thus to the capacitor 20 are made.

[0044] Other process sequences may be used. For example, although the illustrated dielectric layer 28 has been fabricated after the formation of the capacitor 20, portions of the dielectric layer 28 may be constructed simultaneously with portions of the capacitor. For example, the dielectric sub-layers may be stacked sequentially with the sequential formation of a first conductor and a second conductor.

The flat surface of the dielectric layer 28 is
This is a preferred surface for forming a multilayer circuit structure (not shown) on an array of zeros. The multilayer circuit structure is formed using a build-up method. In a typical build-up method, conductive layers and dielectric layers are alternately stacked to form a multilayer circuit structure. The conductive layers of the multilayer circuit structure are interconnected via via structures. In another preferred embodiment, the multilayer circuit structure is prefabricated and stacked on an array of capacitors 20.

A chip or other active device is mounted on a multilayer circuit structure disposed over an array of capacitors to form a chip module, such as a multi-chip module or a single-chip module. The chip is mounted in any suitable manner, such as flip chip bonding.

Although the method of manufacturing a capacitor has been described in detail, embodiments of the present invention are not limited to manufacturing a capacitor. For example, the method according to embodiments of the present invention can be used to manufacture any passive or active device that uses a ceramic structure. Examples of devices that can be manufactured are piezoelectric elements, waveguides, ferroelectric devices, and the like.

The terms and expressions used in the above description are as follows:
It is used for the purpose of explanation, not for limiting the invention, and these terms and expressions are intended to exclude the equivalents of the matters described in the drawings and the description or a part thereof. is not. Therefore, it is recognized that various modifications are possible within the scope of the claimed invention. Furthermore, one or more features of one embodiment of the present invention may be combined with one or more optional features of other embodiments of the present invention without departing from the scope of the present invention.

With respect to the above description, the following embodiments are further conceivable.

(Supplementary Note 1) In the opening of the mask layer and the first
A step of precipitating a ceramic raw material solvent on the conductor,
A method comprising: forming a gel body from a precipitated ceramic raw material solvent; forming a ceramic body from the gel body; and forming a second conductor on the ceramic body. (1) (Supplementary note 2) The method according to Supplementary note 1, wherein the ceramic raw material solvent is an aqueous solution. (2) (Supplementary note 3) The method according to supplementary note 1, wherein the mask layer is hydrophobic. (3) (Supplementary Note 4) The ceramic body is a dielectric ceramic body.
The method according to supplementary note 1.

(Supplementary note 5) The method according to supplementary note 1, wherein the ceramic body contains a metal oxide.

(Supplementary note 6) The method according to Supplementary note 1, wherein the mask layer includes a material capable of forming an optical image.

(Supplementary note 7) The method according to supplementary note 1, wherein the mask layer contains polyimide.

(Supplementary note 8) The method of Supplementary note 1, wherein the ceramic body has a thickness of less than about 3 microns.

(Supplementary note 9) The method according to supplementary note 1, wherein the ceramic body has a dielectric constant of about 10 or more.

(Supplementary Note 10) The first conductor, the second conductor, and the ceramic body constitute a capacitor.
The described method.

(Supplementary Note 11) The method according to claim 1, further comprising, after the step of forming the second conductor, a step of depositing a dielectric material on the first conductor, the second conductor, and the ceramic body. the method of.

(Supplementary Note 12) The first conductor, the second conductor, and the ceramic body constitute a capacitor, and further include a step of disposing the multilayer circuit structure on the capacitor.
The method according to supplementary note 1.

(Supplementary note 13) The method according to supplementary note 12, further comprising a step of mounting a chip on the multilayer circuit structure.

(Supplementary note 14) The method according to supplementary note 12, wherein the multilayer circuit structure is formed using a build-up method.

(Supplementary Note 15) A step of forming a liquid-phobic mask layer with a pattern on the lower structure, and depositing a ceramic raw material solvent that wets the lower structure in the mask layer and on the lower structure. A method comprising the steps of: forming a patterned gel body from a precipitated ceramic raw material solvent; and forming a ceramic body from the gel body.
(4) (Supplementary note 16) The method according to supplementary note 15, wherein the ceramic raw material solvent is an aqueous solution.

(Supplementary Note 17) The mask layer is hydrophobic.
The method according to supplementary note 15.

(Supplementary note 18) The method according to supplementary note 15, wherein the formation of the gel body is performed by heating the precipitated ceramic raw material solvent.

(Supplementary note 19) The method according to supplementary note 15, wherein the formation of the ceramic body is performed by forming a gel body with a pattern.

(Supplementary note 20) A structure manufactured by the method according to claim 1. (5) (Supplementary note 21) A structure manufactured by the method according to claim 15.

The method of manufacturing a capacitor according to the present invention has various effects. For example, the range of materials that can be used to form capacitors include anodization,
It is significantly wider than conventional methods such as chemical vapor deposition or vacuum deposition. Capacitors include a dielectric ceramic structure having a high dielectric constant. The thickness of the dielectric does not need to be increased to increase the capacitance. As a result, there is little likelihood that pinholes and contaminants will degrade the properties of the dielectric ceramic structure and the capacitor.
Moreover, the method according to embodiments of the present invention can be performed without using expensive capital equipment (eg, low pressure vacuum deposition chambers).

[Brief description of the drawings]

1 (a), 1 (b) and 1 (c) are cross-sectional views of a structure in a plating step of a method for manufacturing a plurality of capacitors on a substrate.

2 (a), (b), (c) and (d) are cross-sectional views of a structure in a step of forming a plurality of dielectric ceramic structures in a method of manufacturing a plurality of capacitors on a substrate. .

FIGS. 3A, 3B, and 3C are cross-sectional views of a structure in a step of forming a second conductor in a method of manufacturing a plurality of capacitors on a substrate.

4A and 4B are cross-sectional views of a structure in a step of forming a buried capacitor film in a dielectric layer in a method of manufacturing a plurality of capacitors on a substrate.

[Explanation of symbols]

 REFERENCE SIGNS LIST 11 patterned photoresist layer 12 mask layer material 13 mask layer 13 (a) opening 15 patterned photoresist layer 15 (a) opening 20 capacitor 21 support substrate 22 first conductor 23 gel structure 24 dielectric ceramic structure 26 Second conductor 28 Dielectric layer 28 (a) Opening

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Michael Gee Lee, Inventor, United States, California 95120, San Jose, Sage Oak Way No. 6064 (72) Inventor Wen-Chou Vincent One United States, California 95014, Cupertino, Edmington・ Drive 18457 F term (reference) 5E001 AC04 AH00 AH03 5F083 FR01 JA02 JA06 JA14 JA36 JA37 JA39 JA43

Claims (5)

[Claims] 1. A step of depositing a ceramic raw material solvent in an opening of a mask layer and on a first conductor; a step of forming a gel body from the deposited ceramic raw material solvent; and a step of forming a ceramic body from the gel body. And forming a second conductor on the ceramic body. 2. The method according to claim 1, wherein the ceramic raw material solvent is an aqueous solution. 3. The method of claim 1, wherein the mask layer is hydrophobic. 4. A step of forming a patterned liquid-phobic mask layer on the lower structure, and a step of depositing a ceramic raw material solvent for moistening the lower structure in the mask layer and on the lower structure. A method comprising: forming a patterned gel body from a precipitated ceramic raw material solvent; and forming a ceramic body from the gel body. 5. A structure manufactured using the method of claim 1.