JP2002006774A - 電気光学装置の作製方法 - Google Patents

電気光学装置の作製方法

Info

Publication number
JP2002006774A
JP2002006774A JP2000190084A JP2000190084A JP2002006774A JP 2002006774 A JP2002006774 A JP 2002006774A JP 2000190084 A JP2000190084 A JP 2000190084A JP 2000190084 A JP2000190084 A JP 2000190084A JP 2002006774 A JP2002006774 A JP 2002006774A
Authority
JP
Japan
Prior art keywords
photosensitive resin
resin film
film
light
reflective electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000190084A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002006774A5 (enExample
Inventor
Yoshiharu Hirakata
吉晴 平形
Shingo Eguchi
晋吾 江口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000190084A priority Critical patent/JP2002006774A/ja
Publication of JP2002006774A publication Critical patent/JP2002006774A/ja
Publication of JP2002006774A5 publication Critical patent/JP2002006774A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000190084A 2000-06-23 2000-06-23 電気光学装置の作製方法 Withdrawn JP2002006774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000190084A JP2002006774A (ja) 2000-06-23 2000-06-23 電気光学装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000190084A JP2002006774A (ja) 2000-06-23 2000-06-23 電気光学装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011044738A Division JP2011164628A (ja) 2011-03-02 2011-03-02 電気光学装置の作製方法

Publications (2)

Publication Number Publication Date
JP2002006774A true JP2002006774A (ja) 2002-01-11
JP2002006774A5 JP2002006774A5 (enExample) 2007-08-23

Family

ID=18689612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000190084A Withdrawn JP2002006774A (ja) 2000-06-23 2000-06-23 電気光学装置の作製方法

Country Status (1)

Country Link
JP (1) JP2002006774A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6995898B2 (en) 2002-04-10 2006-02-07 Seiko Epson Corporation Mask, substrate with light reflecting film, method for forming light reflecting film, method for manufacturing electro-optical device, electro-optical device, and electronic apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257948A (ja) * 1988-04-08 1989-10-16 Nec Corp 半導体集積回路用ホトマスク
JPH06175126A (ja) * 1992-12-11 1994-06-24 Sharp Corp 反射型液晶表示装置およびその製造方法
JPH10161297A (ja) * 1996-12-05 1998-06-19 Sony Corp 半導体装置製造用マスク
JP2000089217A (ja) * 1998-09-08 2000-03-31 Matsushita Electric Ind Co Ltd 反射型液晶表示装置とその製造方法
JP2000122090A (ja) * 1998-10-16 2000-04-28 Sony Corp 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000250025A (ja) * 1999-02-25 2000-09-14 Advanced Display Inc 反射型液晶表示装置及びその製造方法並びに反射型液晶表示装置の製造用マスク

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257948A (ja) * 1988-04-08 1989-10-16 Nec Corp 半導体集積回路用ホトマスク
JPH06175126A (ja) * 1992-12-11 1994-06-24 Sharp Corp 反射型液晶表示装置およびその製造方法
JPH10161297A (ja) * 1996-12-05 1998-06-19 Sony Corp 半導体装置製造用マスク
JP2000089217A (ja) * 1998-09-08 2000-03-31 Matsushita Electric Ind Co Ltd 反射型液晶表示装置とその製造方法
JP2000122090A (ja) * 1998-10-16 2000-04-28 Sony Corp 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000250025A (ja) * 1999-02-25 2000-09-14 Advanced Display Inc 反射型液晶表示装置及びその製造方法並びに反射型液晶表示装置の製造用マスク

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6995898B2 (en) 2002-04-10 2006-02-07 Seiko Epson Corporation Mask, substrate with light reflecting film, method for forming light reflecting film, method for manufacturing electro-optical device, electro-optical device, and electronic apparatus
KR100672144B1 (ko) * 2002-04-10 2007-01-19 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 전자 기기

Similar Documents

Publication Publication Date Title
US7316946B2 (en) Method of manufacturing a semiconductor device
US6515336B1 (en) Thin film transistors having tapered gate electrode and taped insulating film
US9057920B2 (en) Liquid crystal display device
JP5132827B2 (ja) 半導体装置及び電子機器
US6613620B2 (en) Semiconductor device and method of manufacturing the same
JP5057613B2 (ja) 半導体装置及び電子機器
US20070155182A1 (en) Manufacturing method of semiconductor device
JP2011180616A (ja) 電気光学装置及び電子機器
US7537972B2 (en) Semiconductor device and method of manufacturing the same
JP4986333B2 (ja) 半導体装置の作製方法
JP2011164628A (ja) 電気光学装置の作製方法
JP4674994B2 (ja) 電気光学装置の作製方法
JP2006330471A (ja) 表示装置用基板及びそれを備えた液晶表示装置
JP4827984B2 (ja) 液晶表示装置の作製方法
JP5352710B2 (ja) 電気光学装置
JP4926332B2 (ja) 半導体装置、電気光学装置及び電子機器
JP4018432B2 (ja) 半導体装置の作製方法
KR100840323B1 (ko) 반사형 액정 표시 장치용 박막 트랜지스터 기판 및 그의제조 방법
JP2002016257A (ja) 半導体装置およびその作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070619

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070619

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100702

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100706

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100824

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100830

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101026

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101102

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110302

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20110303