JP2002006774A - 電気光学装置の作製方法 - Google Patents
電気光学装置の作製方法Info
- Publication number
- JP2002006774A JP2002006774A JP2000190084A JP2000190084A JP2002006774A JP 2002006774 A JP2002006774 A JP 2002006774A JP 2000190084 A JP2000190084 A JP 2000190084A JP 2000190084 A JP2000190084 A JP 2000190084A JP 2002006774 A JP2002006774 A JP 2002006774A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- resin film
- film
- light
- reflective electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims description 76
- 239000011347 resin Substances 0.000 claims abstract description 183
- 229920005989 resin Polymers 0.000 claims abstract description 183
- 239000010408 film Substances 0.000 claims description 371
- 239000010410 layer Substances 0.000 claims description 104
- 239000000758 substrate Substances 0.000 claims description 88
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000004973 liquid crystal related substance Substances 0.000 claims description 31
- 239000011159 matrix material Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000002834 transmittance Methods 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 abstract description 42
- 230000015572 biosynthetic process Effects 0.000 abstract description 13
- 238000000059 patterning Methods 0.000 abstract description 8
- 239000006185 dispersion Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 description 56
- 238000005530 etching Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000003860 storage Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000001994 activation Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 238000004040 coloring Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 101001094026 Synechocystis sp. (strain PCC 6803 / Kazusa) Phasin PhaP Proteins 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000190084A JP2002006774A (ja) | 2000-06-23 | 2000-06-23 | 電気光学装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000190084A JP2002006774A (ja) | 2000-06-23 | 2000-06-23 | 電気光学装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011044738A Division JP2011164628A (ja) | 2011-03-02 | 2011-03-02 | 電気光学装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002006774A true JP2002006774A (ja) | 2002-01-11 |
| JP2002006774A5 JP2002006774A5 (enExample) | 2007-08-23 |
Family
ID=18689612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000190084A Withdrawn JP2002006774A (ja) | 2000-06-23 | 2000-06-23 | 電気光学装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002006774A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995898B2 (en) | 2002-04-10 | 2006-02-07 | Seiko Epson Corporation | Mask, substrate with light reflecting film, method for forming light reflecting film, method for manufacturing electro-optical device, electro-optical device, and electronic apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01257948A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | 半導体集積回路用ホトマスク |
| JPH06175126A (ja) * | 1992-12-11 | 1994-06-24 | Sharp Corp | 反射型液晶表示装置およびその製造方法 |
| JPH10161297A (ja) * | 1996-12-05 | 1998-06-19 | Sony Corp | 半導体装置製造用マスク |
| JP2000089217A (ja) * | 1998-09-08 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 反射型液晶表示装置とその製造方法 |
| JP2000122090A (ja) * | 1998-10-16 | 2000-04-28 | Sony Corp | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
| JP2000250025A (ja) * | 1999-02-25 | 2000-09-14 | Advanced Display Inc | 反射型液晶表示装置及びその製造方法並びに反射型液晶表示装置の製造用マスク |
-
2000
- 2000-06-23 JP JP2000190084A patent/JP2002006774A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01257948A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | 半導体集積回路用ホトマスク |
| JPH06175126A (ja) * | 1992-12-11 | 1994-06-24 | Sharp Corp | 反射型液晶表示装置およびその製造方法 |
| JPH10161297A (ja) * | 1996-12-05 | 1998-06-19 | Sony Corp | 半導体装置製造用マスク |
| JP2000089217A (ja) * | 1998-09-08 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 反射型液晶表示装置とその製造方法 |
| JP2000122090A (ja) * | 1998-10-16 | 2000-04-28 | Sony Corp | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
| JP2000250025A (ja) * | 1999-02-25 | 2000-09-14 | Advanced Display Inc | 反射型液晶表示装置及びその製造方法並びに反射型液晶表示装置の製造用マスク |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995898B2 (en) | 2002-04-10 | 2006-02-07 | Seiko Epson Corporation | Mask, substrate with light reflecting film, method for forming light reflecting film, method for manufacturing electro-optical device, electro-optical device, and electronic apparatus |
| KR100672144B1 (ko) * | 2002-04-10 | 2007-01-19 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치 및 전자 기기 |
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