JP2001523767A - Ｎｉ−Ｓｉマグネトロンスパッタリングターゲットを製造する方法と該方法によって製造されるターゲット - Google Patents
Ｎｉ−Ｓｉマグネトロンスパッタリングターゲットを製造する方法と該方法によって製造されるターゲットInfo
- Publication number
- JP2001523767A JP2001523767A JP2000521252A JP2000521252A JP2001523767A JP 2001523767 A JP2001523767 A JP 2001523767A JP 2000521252 A JP2000521252 A JP 2000521252A JP 2000521252 A JP2000521252 A JP 2000521252A JP 2001523767 A JP2001523767 A JP 2001523767A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- sputter target
- target
- silicon
- ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910018098 Ni-Si Inorganic materials 0.000 title 1
- 229910018529 Ni—Si Inorganic materials 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 112
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 238000005096 rolling process Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 229910000676 Si alloy Inorganic materials 0.000 claims description 14
- 238000005266 casting Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 abstract description 13
- 239000000956 alloy Substances 0.000 abstract description 13
- 230000005298 paramagnetic effect Effects 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000005291 magnetic effect Effects 0.000 description 66
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 230000004907 flux Effects 0.000 description 35
- 230000005415 magnetization Effects 0.000 description 18
- 230000005294 ferromagnetic effect Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- 230000000149 penetrating effect Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005404 magnetometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000009862 microstructural analysis Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002815 nickel Chemical group 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/38—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling sheets of limited length, e.g. folded sheets, superimposed sheets, pack rolling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
- B21B3/02—Rolling special iron alloys, e.g. stainless steel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6618597P | 1997-11-19 | 1997-11-19 | |
| US60/066,185 | 1997-11-19 | ||
| PCT/US1998/024983 WO1999025892A1 (en) | 1997-11-19 | 1998-11-19 | METHOD FOR MAKING Ni-Si MAGNETRON SPUTTERING TARGETS AND TARGETS MADE THEREBY |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001523767A true JP2001523767A (ja) | 2001-11-27 |
| JP2001523767A5 JP2001523767A5 (https=) | 2006-01-19 |
Family
ID=22067812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000521252A Pending JP2001523767A (ja) | 1997-11-19 | 1998-11-19 | Ｎｉ−Ｓｉマグネトロンスパッタリングターゲットを製造する方法と該方法によって製造されるターゲット |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6423196B1 (https=) |
| JP (1) | JP2001523767A (https=) |
| WO (1) | WO1999025892A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011115259A1 (ja) | 2010-03-19 | 2011-09-22 | Jx日鉱日石金属株式会社 | ニッケル合金スパッタリングターゲット、Ｎｉ合金薄膜及びニッケルシリサイド膜 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001523767A (ja) * | 1997-11-19 | 2001-11-27 | トーソー エスエムディー，インク． | Ｎｉ−Ｓｉマグネトロンスパッタリングターゲットを製造する方法と該方法によって製造されるターゲット |
| TW200407443A (en) * | 2002-08-06 | 2004-05-16 | Honeywell Int Inc | Low temperature salicide forming materials and sputtering targets formed therefrom |
| US20060118407A1 (en) * | 2003-05-02 | 2006-06-08 | Tosoh Smd, Inc. | Methods for making low silicon content ni-si sputtering targets and targets made thereby |
| US7314650B1 (en) | 2003-08-05 | 2008-01-01 | Leonard Nanis | Method for fabricating sputter targets |
| US7321140B2 (en) * | 2005-03-11 | 2008-01-22 | Applied Materials, Inc. | Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier |
| JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
| RU2567783C1 (ru) * | 2014-04-29 | 2015-11-10 | федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" | Способ изготовления распыляемой мишени магнетронного источника для нанесения покрытия |
| US9853151B2 (en) * | 2015-09-17 | 2017-12-26 | International Business Machines Corporation | Fully silicided linerless middle-of-line (MOL) contact |
| US10388533B2 (en) * | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| CN109727875A (zh) * | 2018-12-25 | 2019-05-07 | 惠科股份有限公司 | 一种薄膜晶体管的制作方法和显示面板 |
| EP3757248B1 (en) | 2019-06-26 | 2022-04-13 | Materion Advanced Materials Germany GmbH | Nisi sputtering target with improved grain structure |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094761A (en) | 1977-07-25 | 1978-06-13 | Motorola, Inc. | Magnetion sputtering of ferromagnetic material |
| US4299678A (en) | 1979-07-23 | 1981-11-10 | Spin Physics, Inc. | Magnetic target plate for use in magnetron sputtering of magnetic films |
| CA1193227A (en) | 1982-11-18 | 1985-09-10 | Kovilvila Ramachandran | Magnetron sputtering apparatus |
| US4622122A (en) | 1986-02-24 | 1986-11-11 | Oerlikon Buhrle U.S.A. Inc. | Planar magnetron cathode target assembly |
| DE3935698C2 (de) | 1988-10-26 | 1995-06-22 | Sumitomo Metal Mining Co | Legierungstarget für die Herstellung eines magneto-optischen Aufzeichnungsmediums |
| US5294321A (en) | 1988-12-21 | 1994-03-15 | Kabushiki Kaisha Toshiba | Sputtering target |
| DE3906453A1 (de) | 1989-03-01 | 1990-09-06 | Leybold Ag | Verfahren zum beschichten von substraten aus durchscheinendem werkstoff, beispielsweise aus floatglas |
| EP0483375B1 (en) | 1990-05-15 | 1996-03-13 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
| US6274244B1 (en) * | 1991-11-29 | 2001-08-14 | Ppg Industries Ohio, Inc. | Multilayer heat processable vacuum coatings with metallic properties |
| JPH05214523A (ja) | 1992-02-05 | 1993-08-24 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
| US5464520A (en) | 1993-03-19 | 1995-11-07 | Japan Energy Corporation | Silicide targets for sputtering and method of manufacturing the same |
| JP2794382B2 (ja) | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
| US5407551A (en) | 1993-07-13 | 1995-04-18 | The Boc Group, Inc. | Planar magnetron sputtering apparatus |
| US5415754A (en) | 1993-10-22 | 1995-05-16 | Sierra Applied Sciences, Inc. | Method and apparatus for sputtering magnetic target materials |
| JPH0867972A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Materials Corp | モザイク状Ｎｉシリサイドターゲット材 |
| US6123783A (en) * | 1997-02-06 | 2000-09-26 | Heraeus, Inc. | Magnetic data-storage targets and methods for preparation |
| JP2001523767A (ja) * | 1997-11-19 | 2001-11-27 | トーソー エスエムディー，インク． | Ｎｉ−Ｓｉマグネトロンスパッタリングターゲットを製造する方法と該方法によって製造されるターゲット |
-
1998
- 1998-11-19 JP JP2000521252A patent/JP2001523767A/ja active Pending
- 1998-11-19 WO PCT/US1998/024983 patent/WO1999025892A1/en not_active Ceased
- 1998-11-19 US US09/509,360 patent/US6423196B1/en not_active Expired - Lifetime
-
2002
- 2002-05-30 US US10/158,293 patent/US6780295B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011115259A1 (ja) | 2010-03-19 | 2011-09-22 | Jx日鉱日石金属株式会社 | ニッケル合金スパッタリングターゲット、Ｎｉ合金薄膜及びニッケルシリサイド膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999025892A1 (en) | 1999-05-27 |
| US6423196B1 (en) | 2002-07-23 |
| US20020144902A1 (en) | 2002-10-10 |
| US6780295B2 (en) | 2004-08-24 |
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