JP2001520160A - 溶湯から結晶を引き出すためのダイ - Google Patents

溶湯から結晶を引き出すためのダイ

Info

Publication number
JP2001520160A
JP2001520160A JP2000516090A JP2000516090A JP2001520160A JP 2001520160 A JP2001520160 A JP 2001520160A JP 2000516090 A JP2000516090 A JP 2000516090A JP 2000516090 A JP2000516090 A JP 2000516090A JP 2001520160 A JP2001520160 A JP 2001520160A
Authority
JP
Japan
Prior art keywords
die
capillary channel
angle
degrees
flat surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000516090A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001520160A5 (enExample
Inventor
テオドール、フレッド
デルピン、ジャン
− フィリップ ナボ、ジャン
クルロブ、ブラディミール
Original Assignee
コミツサリア タ レネルジー アトミーク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コミツサリア タ レネルジー アトミーク filed Critical コミツサリア タ レネルジー アトミーク
Publication of JP2001520160A publication Critical patent/JP2001520160A/ja
Publication of JP2001520160A5 publication Critical patent/JP2001520160A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y10T117/1048—Pulling includes a horizontal component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2000516090A 1997-10-10 1998-10-09 溶湯から結晶を引き出すためのダイ Pending JP2001520160A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9712680A FR2769639B1 (fr) 1997-10-10 1997-10-10 Filiere pour le tirage de cristaux a partir d'un bain fondu
FR97/12680 1997-10-10
PCT/FR1998/002171 WO1999019545A1 (fr) 1997-10-10 1998-10-09 Filiere pour le tirage de cristaux a partir d'un bain fondu

Publications (2)

Publication Number Publication Date
JP2001520160A true JP2001520160A (ja) 2001-10-30
JP2001520160A5 JP2001520160A5 (enExample) 2006-01-05

Family

ID=9512081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000516090A Pending JP2001520160A (ja) 1997-10-10 1998-10-09 溶湯から結晶を引き出すためのダイ

Country Status (6)

Country Link
US (1) US6325852B1 (enExample)
EP (1) EP1021599B1 (enExample)
JP (1) JP2001520160A (enExample)
DE (1) DE69804480T2 (enExample)
FR (1) FR2769639B1 (enExample)
WO (1) WO1999019545A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574968B2 (en) 2007-07-26 2013-11-05 Soitec Epitaxial methods and templates grown by the methods

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL162518A0 (en) * 2004-06-14 2005-11-20 Rafael Armament Dev Authority Dome
JP5999044B2 (ja) * 2013-07-30 2016-09-28 トヨタ自動車株式会社 引上式連続鋳造装置及び引上式連続鋳造方法
JP6701615B2 (ja) * 2014-03-10 2020-05-27 トヨタ自動車株式会社 引上式連続鋳造装置及び引上式連続鋳造方法
CN104088012B (zh) * 2014-07-31 2016-09-07 中国电子科技集团公司第二十六研究所 一种直接生长蓝宝石整流罩的设备
JP7101194B2 (ja) * 2017-12-07 2022-07-14 京セラ株式会社 単結晶、ｅｆｇ装置用金型、ｅｆｇ装置、単結晶の製造方法、および単結晶部材の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430305A (en) * 1979-02-12 1984-02-07 Mobil Solar Energy Corporation Displaced capillary dies
CA1165212A (en) * 1979-08-10 1984-04-10 Aaron S. Taylor Crucible assembly
DE3310815A1 (de) * 1983-03-24 1984-09-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum ziehen von kristallinen koerpern aus der schmelze unter verwendung von als ziehduesen wirkenden formgebungsteilen
JPS60108398A (ja) * 1983-11-15 1985-06-13 Toshiba Corp シリコン・リボン結晶の成長方法
JPS61106489A (ja) * 1984-10-31 1986-05-24 Toshiba Corp 帯状シリコン結晶の製造方法
FR2712608B1 (fr) * 1993-11-16 1996-01-12 Commissariat Energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu.
US5551977A (en) * 1994-11-14 1996-09-03 Ase Americas, Inc. Susceptor for EFG crystal growth apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574968B2 (en) 2007-07-26 2013-11-05 Soitec Epitaxial methods and templates grown by the methods

Also Published As

Publication number Publication date
FR2769639B1 (fr) 1999-11-12
DE69804480T2 (de) 2002-10-31
US6325852B1 (en) 2001-12-04
DE69804480D1 (de) 2002-05-02
WO1999019545A1 (fr) 1999-04-22
EP1021599B1 (fr) 2002-03-27
EP1021599A1 (fr) 2000-07-26
FR2769639A1 (fr) 1999-04-16

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