JP2001518702A - 磁気回路の作動周波数を増大する方法及びその磁気回路 - Google Patents

磁気回路の作動周波数を増大する方法及びその磁気回路

Info

Publication number
JP2001518702A
JP2001518702A JP2000514294A JP2000514294A JP2001518702A JP 2001518702 A JP2001518702 A JP 2001518702A JP 2000514294 A JP2000514294 A JP 2000514294A JP 2000514294 A JP2000514294 A JP 2000514294A JP 2001518702 A JP2001518702 A JP 2001518702A
Authority
JP
Japan
Prior art keywords
magnetic
magnetic circuit
gap
frequency
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000514294A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001518702A5 (enExample
Inventor
ジャン−バプティスト・アルバーティニ
ジャン−クロード・ペウザン
Original Assignee
コミツサリア タ レネルジー アトミーク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コミツサリア タ レネルジー アトミーク filed Critical コミツサリア タ レネルジー アトミーク
Publication of JP2001518702A publication Critical patent/JP2001518702A/ja
Publication of JP2001518702A5 publication Critical patent/JP2001518702A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/17—Construction or disposition of windings
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3176—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps
    • G11B5/3179—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps the films being mainly disposed in parallel planes
    • G11B5/3183—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps the films being mainly disposed in parallel planes intersecting the gap plane, e.g. "horizontal head structure"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/04—Fixed inductances of the signal type with magnetic core
    • H01F17/06—Fixed inductances of the signal type with magnetic core with core substantially closed in itself, e.g. toroid
    • H01F17/062—Toroidal core with turns of coil around it
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H01F3/14—Constrictions; Gaps, e.g. air-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Composite Materials (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Thin Magnetic Films (AREA)
  • Soft Magnetic Materials (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
JP2000514294A 1997-09-29 1998-09-28 磁気回路の作動周波数を増大する方法及びその磁気回路 Pending JP2001518702A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR97/12080 1997-09-29
FR9712080A FR2769122B1 (fr) 1997-09-29 1997-09-29 Procede pour augmenter la frequence de fonctionnement d'un circuit magnetique et circuit magnetique correspondant
PCT/FR1998/002069 WO1999017319A1 (fr) 1997-09-29 1998-09-28 Procede pour augmenter la frequence de fonctionnement d'un circuit magnetique et circuit magnetique correspondant

Publications (2)

Publication Number Publication Date
JP2001518702A true JP2001518702A (ja) 2001-10-16
JP2001518702A5 JP2001518702A5 (enExample) 2009-06-18

Family

ID=9511576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000514294A Pending JP2001518702A (ja) 1997-09-29 1998-09-28 磁気回路の作動周波数を増大する方法及びその磁気回路

Country Status (6)

Country Link
US (1) US6940383B2 (enExample)
EP (1) EP1019927B1 (enExample)
JP (1) JP2001518702A (enExample)
DE (1) DE69828073T2 (enExample)
FR (1) FR2769122B1 (enExample)
WO (1) WO1999017319A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050520A (ja) * 2000-06-29 2002-02-15 Memscap マイクロインダクタあるいはマイクロトランスタイプのマイクロ要素
JP2002158112A (ja) * 2000-09-12 2002-05-31 Memscap 微小インダクタや微小変圧器といったタイプの微小素子
JP2010182875A (ja) * 2009-02-05 2010-08-19 Fuji Electric Holdings Co Ltd コモンモードチョークコイルおよびノイズフィルタ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426982A4 (en) * 2001-08-31 2004-11-17 Tdk Corp LAMINATED SOFT MAGNETIC LINK, SOFT MAGNETIC SHEET AND PRODUCTION METHOD FOR A LAMINATED SOFT MAGNETIC LINK
US7782659B2 (en) * 2007-05-10 2010-08-24 Macronix International Co., Ltd. Magnetic memory and memory cell thereof and method of manufacturing the memory cell

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881244A (en) * 1972-06-02 1975-05-06 Texas Instruments Inc Method of making a solid state inductor
FR2450462A1 (fr) * 1979-02-27 1980-09-26 Thomson Csf Magnetometre a ondes magnetostatiques
FR2620853B1 (fr) * 1987-09-18 1989-12-01 Commissariat Energie Atomique Materiau magnetique composite et son procede de fabrication
US5070317A (en) * 1989-01-17 1991-12-03 Bhagat Jayant K Miniature inductor for integrated circuits and devices
JPH03238804A (ja) * 1990-02-15 1991-10-24 Nec Corp マイクロ波用インダクタンス素子
US5165162A (en) * 1990-12-24 1992-11-24 General Electric Company Method for making a segmented toroidal inductor
JPH04359518A (ja) * 1991-06-06 1992-12-11 Nec Corp 半導体装置の製造方法
JPH0562123A (ja) * 1991-08-30 1993-03-12 Victor Co Of Japan Ltd 複合型磁気ヘツドの製造方法
US5376912A (en) * 1992-03-12 1994-12-27 Casagrande; Serge Combined transformer and inductor
FR2724482B1 (fr) * 1994-09-13 1996-12-06 Commissariat Energie Atomique Tete magnetique a magnetoresistance multicouche longitudinale sous-jacente
JP3346124B2 (ja) * 1994-10-04 2002-11-18 松下電器産業株式会社 転写導体の製造方法およびグリーンシート積層体の製造方法
FR2726931B1 (fr) * 1994-11-16 1996-12-06 Commissariat Energie Atomique Tete magnetique verticale a bobinage integre et son procede de realisation
JPH0974016A (ja) * 1995-09-05 1997-03-18 Res Inst Electric Magnetic Alloys 高周波低損失磁性薄膜
US6030877A (en) * 1997-10-06 2000-02-29 Industrial Technology Research Institute Electroless gold plating method for forming inductor structures
US6891461B2 (en) * 1999-11-23 2005-05-10 Intel Corporation Integrated transformer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050520A (ja) * 2000-06-29 2002-02-15 Memscap マイクロインダクタあるいはマイクロトランスタイプのマイクロ要素
JP2002158112A (ja) * 2000-09-12 2002-05-31 Memscap 微小インダクタや微小変圧器といったタイプの微小素子
JP2010182875A (ja) * 2009-02-05 2010-08-19 Fuji Electric Holdings Co Ltd コモンモードチョークコイルおよびノイズフィルタ

Also Published As

Publication number Publication date
FR2769122A1 (fr) 1999-04-02
DE69828073T2 (de) 2005-12-01
US6940383B2 (en) 2005-09-06
EP1019927B1 (fr) 2004-12-08
WO1999017319A1 (fr) 1999-04-08
DE69828073D1 (de) 2005-01-13
FR2769122B1 (fr) 2001-04-13
EP1019927A1 (fr) 2000-07-19
US20020057172A1 (en) 2002-05-16

Similar Documents

Publication Publication Date Title
US5387551A (en) Method of manufacturing flat inductance element
US6440750B1 (en) Method of making integrated circuit having a micromagnetic device
CN103975398A (zh) 具有大电感可调谐性的静电可调谐磁电电感器
US5123156A (en) Method for the production of a read-write magnetic head
JP3912601B2 (ja) コモンモードチョークコイル及びその製造方法並びにコモンモードチョークコイルアレイ
JPH0963844A (ja) 積層磁性膜およびそれを用いた薄膜磁気素子
JP2000133520A (ja) 薄膜コイル部品
US6940383B2 (en) Method for increasing the operating frequency of a magnetic circuit and corresponding magnetic circuit
US6529110B2 (en) Microcomponent of the microinductor or microtransformer type
JPH06124843A (ja) 高周波用薄膜トランス
JP2005109246A (ja) 高周波用磁性薄膜、その作製方法及び磁気素子
JP2021510457A (ja) チップインダクタおよびその製造方法
JP2003133136A5 (enExample)
JP3195106B2 (ja) 平面型磁気素子の製造方法
JPS61178710A (ja) 薄膜磁気ヘツド及びその製造方法
JP4431302B2 (ja) 磁区制御された軟磁性薄膜フィルムおよびその製造方法ならびに高周波磁気デバイス
JPH05315177A (ja) 平面インダクタの製造方法
JP2007081349A (ja) インダクタ
JP2535819B2 (ja) 薄膜磁気ヘッドの製造方法
JP2003338409A (ja) 積層磁性薄膜及びその製造方法
JP2002093624A (ja) 微小インダクタや微小変圧器といったタイプの微小素子
JPH11354323A (ja) インダクタ
KR100367621B1 (ko) 자기수동소자의 제조방법
JPH05299282A (ja) 薄膜磁気素子の製造方法
JPH10270250A (ja) 薄膜インダク及びトランス

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050603

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080122

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080422

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080430

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080722

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081119

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090416

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20090416

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090428

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090529