JP2001517373A5 - - Google Patents
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- Publication number
- JP2001517373A5 JP2001517373A5 JP1998541706A JP54170698A JP2001517373A5 JP 2001517373 A5 JP2001517373 A5 JP 2001517373A5 JP 1998541706 A JP1998541706 A JP 1998541706A JP 54170698 A JP54170698 A JP 54170698A JP 2001517373 A5 JP2001517373 A5 JP 2001517373A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/828,507 | 1997-03-31 | ||
| US08/828,507 US6035868A (en) | 1997-03-31 | 1997-03-31 | Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
| PCT/US1998/005569 WO1998044535A1 (en) | 1997-03-31 | 1998-03-26 | Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001517373A JP2001517373A (ja) | 2001-10-02 |
| JP2001517373A5 true JP2001517373A5 (enExample) | 2005-11-10 |
| JP4472789B2 JP4472789B2 (ja) | 2010-06-02 |
Family
ID=25252012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54170698A Expired - Lifetime JP4472789B2 (ja) | 1997-03-31 | 1998-03-26 | プラズマ処理チャンバの内面上への堆積物の堆積を制御する方法及び装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6035868A (enExample) |
| EP (1) | EP0972299B1 (enExample) |
| JP (1) | JP4472789B2 (enExample) |
| KR (1) | KR100535827B1 (enExample) |
| AT (1) | ATE255275T1 (enExample) |
| DE (1) | DE69820041T2 (enExample) |
| TW (1) | TW400540B (enExample) |
| WO (1) | WO1998044535A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
| US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
| US6355183B1 (en) * | 1998-09-04 | 2002-03-12 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for plasma etching |
| US6491042B1 (en) * | 1998-12-07 | 2002-12-10 | Taiwan Semiconductor Manufacturing Company | Post etching treatment process for high density oxide etcher |
| US6496366B1 (en) * | 1999-10-26 | 2002-12-17 | Rackable Systems, Llc | High density computer equipment storage system |
| JP2001267305A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | プラズマ処理装置 |
| US6401652B1 (en) * | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
| US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
| US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
| US6773683B2 (en) * | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
| US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
| JP4819244B2 (ja) * | 2001-05-15 | 2011-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7192874B2 (en) * | 2003-07-15 | 2007-03-20 | International Business Machines Corporation | Method for reducing foreign material concentrations in etch chambers |
| US20070170867A1 (en) * | 2006-01-24 | 2007-07-26 | Varian Semiconductor Equipment Associates, Inc. | Plasma Immersion Ion Source With Low Effective Antenna Voltage |
| US7845310B2 (en) * | 2006-12-06 | 2010-12-07 | Axcelis Technologies, Inc. | Wide area radio frequency plasma apparatus for processing multiple substrates |
| US8375890B2 (en) | 2007-03-19 | 2013-02-19 | Micron Technology, Inc. | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers |
| US7973296B2 (en) * | 2008-03-05 | 2011-07-05 | Tetraheed Llc | Electromagnetic systems with double-resonant spiral coil components |
| US8729806B2 (en) * | 2010-02-02 | 2014-05-20 | The Regents Of The University Of California | RF-driven ion source with a back-streaming electron dump |
| JP5546921B2 (ja) * | 2010-03-26 | 2014-07-09 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| US8936728B2 (en) * | 2010-08-31 | 2015-01-20 | Debra A. Riggs | Chemicals for oil spill cleanup |
| USD664170S1 (en) * | 2011-03-04 | 2012-07-24 | Applied Materials, Inc. | Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass |
| JP2013062358A (ja) * | 2011-09-13 | 2013-04-04 | Panasonic Corp | ドライエッチング装置 |
| JP5642034B2 (ja) * | 2011-09-13 | 2014-12-17 | パナソニック株式会社 | ドライエッチング装置 |
| US9142392B2 (en) * | 2013-04-29 | 2015-09-22 | Varian Semiconductor Equipment Associates, Inc. | Self-cleaning radio frequency plasma source |
| WO2017127163A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
| US12074390B2 (en) | 2022-11-11 | 2024-08-27 | Tokyo Electron Limited | Parallel resonance antenna for radial plasma control |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
| US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| GB8905073D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Ion gun |
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5367139A (en) * | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
| US5304279A (en) * | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
| US5200232A (en) * | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| KR100255703B1 (ko) * | 1991-06-27 | 2000-05-01 | 조셉 제이. 스위니 | 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법 |
| JPH05136091A (ja) * | 1991-11-08 | 1993-06-01 | Sumitomo Metal Ind Ltd | マイクロ波プラズマ装置 |
| US5241245A (en) * | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
| US5226967A (en) * | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| JPH0773997A (ja) * | 1993-06-30 | 1995-03-17 | Kobe Steel Ltd | プラズマｃｖｄ装置と該装置を用いたｃｖｄ処理方法及び該装置内の洗浄方法 |
| US5531834A (en) * | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
| US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
| GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
| TW293983B (enExample) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
| US5685914A (en) * | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
| US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
| DE69531880T2 (de) * | 1994-04-28 | 2004-09-09 | Applied Materials, Inc., Santa Clara | Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung |
| US5587038A (en) * | 1994-06-16 | 1996-12-24 | Princeton University | Apparatus and process for producing high density axially extending plasmas |
| US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
| US5580385A (en) * | 1994-06-30 | 1996-12-03 | Texas Instruments, Incorporated | Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber |
| US5473291A (en) * | 1994-11-16 | 1995-12-05 | Brounley Associates, Inc. | Solid state plasma chamber tuner |
| JP3426382B2 (ja) * | 1995-01-24 | 2003-07-14 | アネルバ株式会社 | プラズマ処理装置 |
| US5688357A (en) * | 1995-02-15 | 1997-11-18 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
| JP3122601B2 (ja) * | 1995-06-15 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ成膜方法及びその装置 |
| US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
| KR100290813B1 (ko) * | 1995-08-17 | 2001-06-01 | 히가시 데쓰로 | 플라스마 처리장치 |
| CA2207154A1 (en) * | 1996-06-10 | 1997-12-10 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5759280A (en) * | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5800619A (en) * | 1996-06-10 | 1998-09-01 | Lam Research Corporation | Vacuum plasma processor having coil with minimum magnetic field in its center |
-
1997
- 1997-03-31 US US08/828,507 patent/US6035868A/en not_active Expired - Lifetime
-
1998
- 1998-03-26 JP JP54170698A patent/JP4472789B2/ja not_active Expired - Lifetime
- 1998-03-26 KR KR10-1999-7008963A patent/KR100535827B1/ko not_active Expired - Fee Related
- 1998-03-26 WO PCT/US1998/005569 patent/WO1998044535A1/en not_active Ceased
- 1998-03-26 DE DE69820041T patent/DE69820041T2/de not_active Expired - Fee Related
- 1998-03-26 EP EP98913017A patent/EP0972299B1/en not_active Expired - Lifetime
- 1998-03-26 AT AT98913017T patent/ATE255275T1/de not_active IP Right Cessation
- 1998-03-31 TW TW087104841A patent/TW400540B/zh not_active IP Right Cessation
-
1999
- 1999-12-01 US US09/451,850 patent/US6155203A/en not_active Expired - Lifetime