JP2001505366A5 - - Google Patents

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Publication number
JP2001505366A5
JP2001505366A5 JP1998525882A JP52588298A JP2001505366A5 JP 2001505366 A5 JP2001505366 A5 JP 2001505366A5 JP 1998525882 A JP1998525882 A JP 1998525882A JP 52588298 A JP52588298 A JP 52588298A JP 2001505366 A5 JP2001505366 A5 JP 2001505366A5
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JP
Japan
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JP1998525882A
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English (en)
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JP4443632B2 (ja
JP2001505366A (ja
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Priority claimed from US08/760,031 external-priority patent/US5888675A/en
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Publication of JP2001505366A5 publication Critical patent/JP2001505366A5/ja
Application granted granted Critical
Publication of JP4443632B2 publication Critical patent/JP4443632B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Figure 2001505366
Figure 2001505366
Figure 2001505366
Figure 2001505366
Figure 2001505366
Figure 2001505366
JP52588298A 1996-12-04 1997-12-04 フォトリソグラフィックシステムにおけるレンズ誤差を補正するレチクル Expired - Fee Related JP4443632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/760,031 1996-12-04
US08/760,031 US5888675A (en) 1996-12-04 1996-12-04 Reticle that compensates for radiation-induced lens error in a photolithographic system
PCT/US1997/022616 WO1998025182A1 (en) 1996-12-04 1997-12-04 Reticle that compensates for lens error in a photolithographic system

Publications (3)

Publication Number Publication Date
JP2001505366A JP2001505366A (ja) 2001-04-17
JP2001505366A5 true JP2001505366A5 (ja) 2005-07-14
JP4443632B2 JP4443632B2 (ja) 2010-03-31

Family

ID=25057860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52588298A Expired - Fee Related JP4443632B2 (ja) 1996-12-04 1997-12-04 フォトリソグラフィックシステムにおけるレンズ誤差を補正するレチクル

Country Status (6)

Country Link
US (1) US5888675A (ja)
EP (1) EP0943119B1 (ja)
JP (1) JP4443632B2 (ja)
KR (1) KR100517678B1 (ja)
DE (1) DE69705638T2 (ja)
WO (1) WO1998025182A1 (ja)

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TW357262B (en) 1996-12-19 1999-05-01 Nikon Corp Method for the measurement of aberration of optical projection system, a mask and a exposure device for optical project system
US6529623B1 (en) * 1999-08-31 2003-03-04 Advanced Micro Devices, Inc. Stepper lens specific reticle compensation for critical dimension control
WO2001051993A1 (en) * 2000-01-14 2001-07-19 Advanced Micro Devices, Inc. System, method and photomask for compensating aberrations in a photolithography patterning system
US6513151B1 (en) * 2000-09-14 2003-01-28 Advanced Micro Devices, Inc. Full flow focus exposure matrix analysis and electrical testing for new product mask evaluation
US6906305B2 (en) * 2002-01-08 2005-06-14 Brion Technologies, Inc. System and method for aerial image sensing
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7053355B2 (en) 2003-03-18 2006-05-30 Brion Technologies, Inc. System and method for lithography process monitoring and control
AU2003233318A1 (en) * 2003-05-12 2004-11-26 Carl Zeiss Smt Ag Optical measuring device and operating method for an optical imaging system
US7318214B1 (en) 2003-06-19 2008-01-08 Invarium, Inc. System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections
US7558419B1 (en) 2003-08-14 2009-07-07 Brion Technologies, Inc. System and method for detecting integrated circuit pattern defects
US7003758B2 (en) * 2003-10-07 2006-02-21 Brion Technologies, Inc. System and method for lithography simulation
US7858450B2 (en) * 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
US7266800B2 (en) * 2004-06-04 2007-09-04 Invarium, Inc. Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes
JP4316442B2 (ja) * 2004-07-27 2009-08-19 株式会社東芝 評価システム、露光描画システム及び評価方法
US7588868B2 (en) * 2004-10-06 2009-09-15 Cadence Design Systems, Inc. Method and system for reducing the impact of across-wafer variations on critical dimension measurements
JP5414968B2 (ja) * 2005-11-14 2014-02-12 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学撮像システムの測定装置および操作方法
US7853067B2 (en) * 2006-10-27 2010-12-14 Asml Holding N.V. Systems and methods for lithographic reticle inspection
ATE554427T1 (de) * 2007-01-22 2012-05-15 Zeiss Carl Smt Gmbh Verfahren zur verbesserung von bildgebungseigenschaften eines optischen systems und optisches system
US7564556B2 (en) * 2007-04-02 2009-07-21 Taiwan Semiconductor Manufacturing Company Method and apparatus for lens contamination control
WO2009053001A1 (de) * 2007-10-19 2009-04-30 Carl Zeiss Smt Ag Optische vorrichtung mit verbessertem abbildungsverhalten sowie verfahren dazu
US8845908B2 (en) 2010-08-24 2014-09-30 Micron Technology, Inc. Reticles, and methods of mitigating asymmetric lens heating in photolithography
US8625078B2 (en) * 2011-04-06 2014-01-07 Nanya Technology Corp. Illumination design for lens heating mitigation
US8609302B2 (en) 2011-08-22 2013-12-17 Micron Technology, Inc. Lithography methods, methods for forming patterning tools and patterning tools
DE102012207335A1 (de) * 2012-05-03 2013-03-28 Carl Zeiss Smt Gmbh Lithographieverfahren und projektionsbelichtungsanlage mit einem abbildungsfehler korrigierenden retikel und verfahren zur herstellung eines entsprechenden retikels
US9476764B2 (en) 2013-09-10 2016-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Wavefront adjustment in extreme ultra-violet (EUV) lithography
US9405204B2 (en) 2013-09-18 2016-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of overlay in extreme ultra-violet (EUV) lithography
US9034665B2 (en) * 2013-10-11 2015-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Tool configuration and method for extreme ultra-violet (EUV) patterning with a deformable reflective surface

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
DE1522285A1 (de) * 1966-03-17 1969-08-07 Telefunken Patent Verfahren zur Erzeugung von Mikrostrukturen auf einem Substrat
US4585342A (en) * 1984-06-29 1986-04-29 International Business Machines Corporation System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
US4759626A (en) * 1986-11-10 1988-07-26 Hewlett-Packard Company Determination of best focus for step and repeat projection aligners
JPS6474547A (en) * 1987-09-14 1989-03-20 Motorola Inc Manufacture of semiconductor for compensating strain between pattern on semiconductor body and mask for obtaining pattern
US5308991A (en) * 1992-06-02 1994-05-03 National Semiconductor Corporation Method and apparatus for making a predistorted reticle to compensate for lens distortions
US5402224A (en) * 1992-09-25 1995-03-28 Nikon Corporation Distortion inspecting method for projection optical system
US5329334A (en) * 1993-03-02 1994-07-12 Lsi Logic Corporation Integrated circuit test reticle and alignment mark optimization method
JP3186011B2 (ja) * 1994-06-24 2001-07-11 キヤノン株式会社 投影露光装置及びデバイス製造方法
JP3893626B2 (ja) * 1995-01-25 2007-03-14 株式会社ニコン 投影光学装置の調整方法、投影光学装置、露光装置及び露光方法
US5723238A (en) * 1996-12-04 1998-03-03 Advanced Micro Devices, Inc. Inspection of lens error associated with lens heating in a photolithographic system

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