JP2001358275A - Lead frame and semiconductor device - Google Patents
Lead frame and semiconductor deviceInfo
- Publication number
- JP2001358275A JP2001358275A JP2000180858A JP2000180858A JP2001358275A JP 2001358275 A JP2001358275 A JP 2001358275A JP 2000180858 A JP2000180858 A JP 2000180858A JP 2000180858 A JP2000180858 A JP 2000180858A JP 2001358275 A JP2001358275 A JP 2001358275A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor element
- semiconductor device
- concave portion
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はリードフレーム及び
半導体装置に関し、更に詳細には矩形状の半導体素子が
搭載される放熱板と、前記放熱板に搭載された半導体素
子とワイヤ等によって電気的に接続されるインナーリー
ドとを具備するリードフレーム及び半導体装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame and a semiconductor device, and more particularly, to a heat sink on which a rectangular semiconductor element is mounted, and electrically connected to the semiconductor element mounted on the heat sink by wires and the like. The present invention relates to a lead frame including an inner lead to be connected and a semiconductor device.
【０００２】[0002]
【従来の技術】半導体装置には、図７（ａ）（ｂ）に示
す半導体装置がある。図７（ａ）に示す半導体装置は、
放熱板１０２に搭載された半導体素子１００と、放熱板
１０２に接着テープ１０６によって接着されたインナー
リード１０４，１０４・・とが、ワイヤ１０８，１０８
・・によって電気的に接続されていると共に、半導体素
子１００及び放熱板１０２等が封止樹脂によって封止さ
れている。また、図７（ｂ）に示す半導体装置は、図７
（ａ）に示す半導体装置と同様に、放熱板１１０の一面
に搭載された半導体素子１００と、放熱板１１０に接着
テープ１０６によって接着されたインナーリード１０
４，１０４・・とが、ワイヤ１０８，１０８・・によっ
て電気的に接続されていると共に、半導体素子１００が
封止樹脂によって封止されているが、放熱板１１０の他
面（半導体素子１００の搭載面に対して反対面）が封止
樹脂の表面から露出している。2. Description of the Related Art As a semiconductor device, there is a semiconductor device shown in FIGS. The semiconductor device shown in FIG.
The semiconductor elements 100 mounted on the heat radiating plate 102 and the inner leads 104, 104,.
Are electrically connected with each other, and the semiconductor element 100 and the heat sink 102 are sealed with a sealing resin. Further, the semiconductor device shown in FIG.
As in the case of the semiconductor device shown in FIG. 1A, the semiconductor element 100 mounted on one surface of the heat sink 110 and the inner leads 10 bonded to the heat sink 110 by an adhesive tape 106.
Are electrically connected by wires 108, and the semiconductor element 100 is sealed with a sealing resin. The surface opposite to the mounting surface) is exposed from the surface of the sealing resin.
【０００３】[0003]
【発明が解決しようとする課題】この様に、図７（ｂ）
に示す半導体装置は、放熱板１１０の他面が封止樹脂の
表面から露出しているため、放熱板１０２の全面が封止
樹脂によって封止されている図７（ａ）に示す半導体装
置よりも放熱性が良好である。しかし、他面が封止樹脂
の表面から露出する放熱板１１０は、封止樹脂によって
全面が封止される放熱板１０２よりも厚く形成されてい
るため、個々に所定形状に形成することを要する。更
に、組立ての際にも、放熱板１１０を個々に位置決めを
行うことを要する。したがって、放熱板１１０の加工時
間及び組立て時間が、放熱板１０２の加工時間及び組立
て時間に比較して長く、図７（ｂ）に示す半導体装置の
生産性は、図７（ａ）に示す半導体装置よりも劣る。As described above, FIG.
In the semiconductor device shown in FIG. 7A, since the other surface of the heat sink 110 is exposed from the surface of the sealing resin, the entire surface of the heat sink 102 is sealed with the sealing resin. Also has good heat dissipation. However, since the heat radiating plate 110 whose other surface is exposed from the surface of the sealing resin is formed thicker than the heat radiating plate 102 whose entire surface is sealed by the sealing resin, it is necessary to individually form the heat radiating plate 110 into a predetermined shape. . Furthermore, it is necessary to position the heat radiating plates 110 individually at the time of assembly. Therefore, the processing time and the assembling time of the heat sink 110 are longer than the processing time and the assembling time of the heat sink 102, and the productivity of the semiconductor device shown in FIG. Inferior to device.
【０００４】このため、本発明者は、図７（ｂ）に示す
半導体装置よりも良好な生産性を奏し得る図７（ａ）に
示す半導体装置の放熱性を改良すべく、図８に示す半導
体装置の試作を試みた。図８に示す半導体装置は、放熱
板２００に絞り加工を施して形成した凹部の底面に半導
体素子１００を搭載すると共に、その凹部の底面に対応
する放熱板２００の表面を封止樹脂の表面から露出する
ものである。かかる放熱板２００の凹部２０２の底面
は、図９に示す様に、搭載される矩形の半導体素子１０
０と相似形の矩形状であるため、凹部２００には角部Ａ
が四箇所に形成される。ところで、凹部２０２が浅い場
合には、絞り加工によって容易に凹部２０２を形成でき
るが、図８に示す様に、凹部２０２の底面に対応する放
熱板２００の表面を封止樹脂の表面から露出するには、
深い凹部２０２を形成することが必要である。しかしな
がら、放熱板２００の表面が封止樹脂の表面から露出す
るような深い凹部２０２を、絞り加工によって形成する
ことは極めて困難である。また、放熱板２００の表面を
封止樹脂の表面から露出するため、放熱板２００と封止
樹脂層を形成する封止樹脂との密着程度が低下し、放熱
板２００と封止樹脂とが剥離し易くなる。そこで、本発
明の課題は、半導体素子が搭載される搭載面が底面に形
成された凹部であって、通常の絞り加工では形成困難な
程度に深い凹部を、絞り加工によって放熱板に容易に形
成でき、且つ放熱板と封止樹脂との剥離を効果的に防止
できるリードフレーム及び半導体装置を提供することに
ある。For this reason, the present inventor has shown in FIG. 8 a semiconductor device shown in FIG. 7A to improve the heat dissipation of the semiconductor device shown in FIG. Trial production of a semiconductor device was attempted. In the semiconductor device shown in FIG. 8, the semiconductor element 100 is mounted on the bottom surface of the concave portion formed by subjecting the heat radiating plate 200 to drawing, and the surface of the heat radiating plate 200 corresponding to the bottom surface of the concave portion is formed from the surface of the sealing resin. What is exposed. As shown in FIG. 9, the bottom surface of the concave portion 202 of the heat sink 200 has a rectangular semiconductor element 10 mounted thereon.
0, the concave portion 200 has a corner A
Are formed in four places. When the concave portion 202 is shallow, the concave portion 202 can be easily formed by drawing. However, as shown in FIG. 8, the surface of the heat sink 200 corresponding to the bottom surface of the concave portion 202 is exposed from the surface of the sealing resin. In
It is necessary to form a deep recess 202. However, it is extremely difficult to form a deep recess 202 such that the surface of the heat sink 200 is exposed from the surface of the sealing resin by drawing. In addition, since the surface of the heat sink 200 is exposed from the surface of the sealing resin, the degree of adhesion between the heat sink 200 and the sealing resin forming the sealing resin layer is reduced, and the heat sink 200 and the sealing resin are separated. Easier to do. Therefore, an object of the present invention is to form a concave portion in which a mounting surface on which a semiconductor element is mounted is formed on the bottom surface, and a concave portion which is difficult to be formed by a normal drawing process, is easily formed on a heat dissipation plate by a drawing process. It is an object of the present invention to provide a lead frame and a semiconductor device which are capable of effectively preventing peeling of a heat sink and a sealing resin.
【０００５】[0005]
【課題を解決するための手段】本発明者は、前記課題を
解決すべく検討した結果、予め凹部２０２の角部Ａに形
成される部分を打ち抜いた放熱板用板体に絞り加工を施
すことによって、所望深さの凹部を形成することができ
ることを知り、本発明に到達した。すなわち、本発明
は、矩形状の半導体素子が搭載される放熱板と、前記放
熱板に搭載された半導体素子とワイヤ等によって電気的
に接続されるインナーリードとを具備するリードフレー
ムにおいて、該放熱板の半導体素子が搭載される搭載面
が、絞り加工によって形成された矩形状の凹部の底面に
形成され、且つ前記凹部の各角部の内壁部を形成する曲
折部分が、抜き落とされて貫通孔に形成されていること
を特徴とするリードフレームにある。また、本発明は、
矩形状の半導体素子が搭載された放熱板と、前記放熱板
に搭載された半導体素子とワイヤ等によって電気的に接
続されたインナーリードとが、封止樹脂によって封止さ
れた半導体装置において、該放熱板の半導体素子が、絞
り加工によって形成された矩形状の凹部の底面に搭載さ
れ、且つ前記凹部の各角部の内壁部を形成する曲折部分
が、抜き落とされて貫通孔に形成されていることを特徴
とする半導体装置にある。As a result of studying to solve the above-mentioned problems, the present inventor performed drawing on a heat sink plate obtained by previously punching out a portion formed at a corner A of the concave portion 202. The present inventors have found that a recess having a desired depth can be formed by the above method, and have reached the present invention. That is, the present invention relates to a lead frame including a heat sink on which a rectangular semiconductor element is mounted, and inner leads electrically connected to the semiconductor element mounted on the heat sink by wires or the like. The mounting surface on which the semiconductor element of the plate is mounted is formed on the bottom surface of a rectangular concave portion formed by drawing, and the bent portion forming the inner wall portion of each corner of the concave portion is pulled out and penetrated. The lead frame is formed in the hole. Also, the present invention
In a semiconductor device in which a heat sink on which a rectangular semiconductor element is mounted and an inner lead electrically connected to the semiconductor element mounted on the heat sink by a wire or the like are sealed with a sealing resin, The semiconductor element of the heat sink is mounted on the bottom surface of a rectangular concave portion formed by drawing, and a bent portion forming an inner wall portion of each corner of the concave portion is removed and formed in a through hole. A semiconductor device.
【０００６】かかる本発明において、凹部の直線部の内
壁部を形成する曲折部分を、部分的に抜き落として貫通
孔又はスリットに形成することによって、深い凹部を絞
り加工によって更に容易に形成でき、放熱板と封止樹脂
との剥離を更に防止できる。また、凹部の底面に対応す
る放熱板の表面を、封止樹脂の表面から露出することに
よって、半導体装置の放熱性を向上できる。更に、矩形
状の半導体素子が搭載される放熱板を、インナーリード
と別体に形成した放熱板とし、前記放熱板とインナーリ
ードの先端部とを接着テープ等の接着部材によって接着
して一体化することにより、インナーリード等の製造と
は別に、放熱板の製造を行うことができ、両者を効率的
に製造できる。In the present invention, the bent portion forming the inner wall portion of the straight portion of the concave portion is partially cut out and formed in the through hole or the slit, so that the deep concave portion can be more easily formed by drawing. Separation of the heat sink and the sealing resin can be further prevented. Further, by exposing the surface of the heat radiating plate corresponding to the bottom surface of the concave portion from the surface of the sealing resin, the heat radiation of the semiconductor device can be improved. Furthermore, the heat sink on which the rectangular semiconductor element is mounted is a heat sink formed separately from the inner lead, and the heat sink and the tip of the inner lead are integrated by bonding with an adhesive member such as an adhesive tape. By doing so, a heat sink can be manufactured separately from the manufacture of the inner leads and the like, and both can be efficiently manufactured.
【０００７】一般的に、絞り加工によって形成された矩
形状の凹部の内壁部は、その面が傾斜面に形成されてい
る。このため、深い凹部を絞り加工によって形成する場
合には、凹部の内壁部を可及的に直角に近づけること必
要である。この点、本発明では、矩形状の凹部の各角部
の内壁部を形成する曲折部分を抜き落として貫通孔に形
成することによって、絞り加工の際に、凹部の内壁部を
可及的に直角に曲折できる。その結果、従来、絞り加工
では形成困難な深い凹部を、絞り加工によって形成可能
となった。このため、搭載された半導体素子等を封止す
る封止樹脂の表面から凹部の底面に対応する放熱板の表
面が露出する程度の深い凹部を、絞り加工によって放熱
板に形成できる。更に、この凹部に形成された貫通孔を
介し、放熱板の上下面の封止樹脂が連結され、放熱板と
封止樹脂との剥離を防止できる。In general, the inner wall of a rectangular recess formed by drawing has an inclined surface. Therefore, when forming a deep concave portion by drawing, it is necessary to make the inner wall portion of the concave portion as close to a right angle as possible. In this regard, in the present invention, by forming a through-hole by extracting a bent portion forming an inner wall portion of each corner of the rectangular concave portion, the inner wall portion of the concave portion can be formed as much as possible during drawing. Can be bent at right angles. As a result, it has become possible to form a deep recess which is conventionally difficult to form by drawing. For this reason, a concave portion deep enough to expose the surface of the heat sink corresponding to the bottom surface of the concave portion from the surface of the sealing resin that seals the mounted semiconductor element or the like can be formed on the heat sink by drawing. Further, the sealing resin on the upper and lower surfaces of the heat radiating plate is connected through the through hole formed in the concave portion, so that separation of the heat radiating plate and the sealing resin can be prevented.
【０００８】[0008]
【発明の実施の形態】本発明に係るリードフレームの一
例を図１に示す。図１に示すリードフレーム１０は、半
導体素子１２が搭載される放熱板１８と、放熱板１８の
周縁部２０の平坦面に接着テープ２２によって先端部が
接着されたインナーリード２４，２４・・とから構成さ
れる。かかる放熱板１８の略中央部には、矩形状の凹部
１６が形成されており、凹部１６の底面１４に半導体素
子１２が搭載される。この凹部１６には、図２に示す様
に、凹部１６の各角部の内壁部を形成する曲折部分が、
抜き落とされて貫通孔２６，２６，２６，２６に形成さ
れている。この様に、凹部１６の各角部に貫通孔２６，
２６・・を形成することにより、絞り加工によって深い
凹部１６を容易に形成できる。つまり、通常、矩形状の
凹部１６を絞り加工によって形成する際には、凹部１６
の内壁部の面が傾斜面に形成されるが、凹部１６の各角
部の内壁部を形成する曲折部分を抜き落として貫通孔２
６に形成することによって、絞り加工により凹部１６の
内壁部を可及的に直角に形成できる。FIG. 1 shows an example of a lead frame according to the present invention. The lead frame 10 shown in FIG. 1 has a heat radiating plate 18 on which the semiconductor element 12 is mounted, and inner leads 24, 24,... Of which tips are adhered to a flat surface of a peripheral portion 20 of the heat radiating plate 18 by an adhesive tape 22. Consists of At a substantially central portion of the heat sink 18, a rectangular recess 16 is formed, and the semiconductor element 12 is mounted on the bottom surface 14 of the recess 16. As shown in FIG. 2, a bent portion forming an inner wall portion of each corner of the concave portion 16 is formed in the concave portion 16.
It is pulled out and formed in the through holes 26, 26, 26, 26. In this manner, the through holes 26,
By forming 26, a deep recess 16 can be easily formed by drawing. That is, usually, when the rectangular concave portion 16 is formed by drawing, the concave portion 16 is formed.
Of the inner wall portion is formed as an inclined surface, but the bent portion forming the inner wall portion at each corner of the concave portion 16 is removed and the through hole 2 is formed.
6, the inner wall portion of the concave portion 16 can be formed as perpendicular as possible by drawing.
【０００９】図１及び図２に示す凹部１６の直線部の内
壁部を形成する曲折部分にも貫通孔２８，２８・・が形
成されている。このため、凹部１６を形成する絞り加工
の際に、凹部１６の直線部の内壁部を更に一層直角に形
成し易くなり、更に深い凹部を形成できる。凹部１６の
内壁部に形成された貫通孔２６，２８は、図３（ａ）
（ｂ）に示す様に、凹部１６の底面１４と周縁部２０と
の間の内壁部を形成する曲折部分を打ち抜いて形成され
ている。この貫通孔２６，２８の形状は、図４（ａ）
（ｂ）に示す形状であってもよい。図４（ａ）（ｂ）に
示す貫通孔２６，２８内には、凹部１６の底部の一部が
張り出した張出部３０に形成されている。かかる張出部
３０は、後述する様に、貫通孔２６，２８を介して放熱
板１８の上下面の封止樹脂に食い込むアンカー効果を奏
するため、放熱板１８と封止樹脂との密着性を更に向上
できる。尚、図２に示す様に、凹部１６の直線部の内壁
部を形成する曲折部分が、部分的にスリット状に抜き落
とされてスリット２８に形成されていてもよい。[0009] Through holes 28 are also formed in the bent portion forming the inner wall of the straight portion of the concave portion 16 shown in FIGS. For this reason, at the time of drawing processing for forming the concave portion 16, the inner wall portion of the straight portion of the concave portion 16 can be more easily formed at a right angle, and a deeper concave portion can be formed. The through holes 26 and 28 formed in the inner wall of the recess 16 are shown in FIG.
As shown in FIG. 2B, a bent portion forming an inner wall portion between the bottom surface 14 of the concave portion 16 and the peripheral edge portion 20 is punched out. The shapes of the through holes 26 and 28 are as shown in FIG.
The shape shown in FIG. In the through holes 26 and 28 shown in FIGS. 4A and 4B, a part of the bottom of the concave portion 16 is formed in an overhanging portion 30 which overhangs. As will be described later, the overhanging portion 30 has an anchor effect of penetrating the sealing resin on the upper and lower surfaces of the heat radiating plate 18 through the through holes 26 and 28, so that the adhesion between the heat radiating plate 18 and the sealing resin is improved. It can be further improved. In addition, as shown in FIG. 2, a bent portion forming the inner wall portion of the straight portion of the concave portion 16 may be partially cut out in a slit shape to be formed in the slit 28.
【００１０】この様な貫通孔２６，２８が形成された凹
部１６を、放熱板用板体に絞り加工によって形成するに
は、先ず、放熱板用板体の凹部１６の角部及び直線部の
内壁部が形成される部分を打ち抜いて貫通孔２６，２８
を形成した後、この放熱板用板体に絞り加工を施して所
定深さの凹部１６を形成する。この際、複数個の放熱板
用板体をシート状に連結したシート状体に貫通孔２６，
２８を形成した後、各放熱板用板体に絞り加工を施して
凹部１６を形成することが好ましい。放熱板用板体の各
々に絞り加工を施す際に、ピンガイド等によってシート
状体の位置決めを行うことにより、放熱板用板体の各々
の位置決めを容易に行うことができるからである。In order to form the recess 16 in which the through holes 26 and 28 are formed by drawing on the heat sink plate, first, the corners and the straight portions of the recess 16 of the heat sink plate are formed. The portion where the inner wall portion is formed is punched out to form through holes 26 and 28.
Is formed, a drawing process is performed on the heat sink plate to form a recess 16 having a predetermined depth. At this time, the through holes 26,
After the formation of the recesses 28, it is preferable that the recesses 16 are formed by subjecting each heat sink plate to drawing. This is because, when the drawing process is performed on each of the heat sink plate members, the positioning of the sheet member with a pin guide or the like can facilitate the positioning of each of the heat sink plate members.
【００１１】凹部１６の所定箇所に貫通孔２６，２８が
形成された図２に示す放熱板１８には、その周縁部２０
の平坦面に、放熱板１８と別体に形成したインナーリー
ド２４，２４・・の先端部を接着シート２２により接着
することによって、図１に示すリードフレーム１０を得
ることができる。得られたリードフレーム１０の放熱板
１８に形成された凹部１６の底面１４に半導体素子１２
を搭載した後、図１に示す様に、半導体素子１２とイン
ナーリード２４，２４・・の各先端部とをワイヤ３２，
３２・・によって電気的に接続する。その後、半導体素
子１２及びワイヤ３２，３２・・等を樹脂モールドする
ことによって、図５に示す半導体装置を得ることができ
る。図５に示す半導体装置では、凹部１６の底面１４に
対応する放熱板１８の表面３４が、半導体素子１２等を
封止する封止樹脂から成る封止樹脂３６の表面から露出
している。The heat radiating plate 18 shown in FIG. 2 in which through holes 26 and 28 are formed at predetermined locations of the concave portion 16 has a peripheral portion 20.
The lead frame 10 shown in FIG. 1 can be obtained by bonding the tips of the inner leads 24, 24... Formed separately from the heat sink 18 to the flat surface with the adhesive sheet 22. The semiconductor element 12 is provided on the bottom surface 14 of the recess 16 formed in the heat sink 18 of the obtained lead frame 10.
After the mounting, the semiconductor element 12 and the tips of the inner leads 24, 24,.
32 .. are electrically connected. After that, the semiconductor device shown in FIG. 5 can be obtained by resin-molding the semiconductor element 12 and the wires 32. In the semiconductor device shown in FIG. 5, the surface 34 of the heat radiating plate 18 corresponding to the bottom surface 14 of the concave portion 16 is exposed from the surface of a sealing resin 36 made of a sealing resin for sealing the semiconductor element 12 and the like.
【００１２】この様に、放熱板１８の一部が封止樹脂３
６の表面から露出することによって、放熱板１８の放熱
性を向上できる。特に、図５に示す半導体装置では、半
導体素子１２が搭載されている凹部１６の底面１４に対
応する放熱板１８の表面３４が封止樹脂３６の表面から
露出している。このため、半導体素子１２に発生した熱
を迅速に放熱することができ、半導体素子１２の誤動作
を少なくできる。更に、封止樹脂３６の表面から露出す
る放熱板１８の外面３４に、放熱フィン等の放熱部材を
装着し、図５に示す半導体装置の放熱性を更に向上する
こともできる。また、封止樹脂３６では、放熱板１８の
凹部１６に形成された貫通孔２６，２８を介して放熱板
１８の一面側の封止樹脂と他面側の封止樹脂とが連結さ
れているため、放熱板１８と封止樹脂との剥離を防止で
きる。As described above, a part of the heat radiating plate 18 is
By exposing from the surface of 6, the heat radiation of the heat radiating plate 18 can be improved. In particular, in the semiconductor device shown in FIG. 5, the surface 34 of the heat radiating plate 18 corresponding to the bottom surface 14 of the recess 16 in which the semiconductor element 12 is mounted is exposed from the surface of the sealing resin 36. Therefore, heat generated in the semiconductor element 12 can be quickly radiated, and malfunction of the semiconductor element 12 can be reduced. Furthermore, a heat radiating member such as a heat radiating fin may be attached to the outer surface 34 of the heat radiating plate 18 exposed from the surface of the sealing resin 36, so that the heat radiation of the semiconductor device shown in FIG. 5 can be further improved. In the sealing resin 36, the sealing resin on one surface and the sealing resin on the other surface of the heat radiating plate 18 are connected through through holes 26 and 28 formed in the concave portion 16 of the heat radiating plate 18. Therefore, separation of the heat sink 18 from the sealing resin can be prevented.
【００１３】図５に示す半導体装置では、凹部１６の底
面１４に対応する放熱板１８の表面３４が封止樹脂３６
の表面から露出しているが、図６に示す半導体装置の様
に、凹部１６の底面１４に対応する放熱板１８の表面３
４が封止樹脂層３６内に封止されていてもよい。図６に
示す半導体装置では、図５に示す半導体装置に比較して
放熱性は低下するものの、凹部１６の底面１４に対応す
る放熱板１８の表面３４を覆う封止樹脂の厚さは、図７
（ａ）に示す半導体装置に比較して薄いため、図７
（ａ）に示す半導体装置よりも放熱性は良好である。ま
た、図１〜図６に示すリードフレーム１０又は半導体装
置では、放熱板１８をインナーリード２４，２４・・と
別体に形成した後、両者を組み立てるが、放熱板１８を
サポートバー等でフレームに支承し、インナーリード２
４，２４・・と一体に形成してもよい。In the semiconductor device shown in FIG. 5, the surface 34 of the heat sink 18 corresponding to the bottom
The surface 3 of the heat radiating plate 18 corresponding to the bottom surface 14 of the concave portion 16 is exposed as shown in FIG.
4 may be sealed in the sealing resin layer 36. In the semiconductor device shown in FIG. 6, although the heat dissipation is lower than that of the semiconductor device shown in FIG. 5, the thickness of the sealing resin covering the surface 34 of the heat dissipation plate 18 corresponding to the bottom surface 14 of the concave portion 16 is 7
As compared with the semiconductor device shown in FIG.
The heat dissipation is better than that of the semiconductor device shown in FIG. Also, in the lead frame 10 or the semiconductor device shown in FIGS. 1 to 6, after the heat sink 18 is formed separately from the inner leads 24, 24,..., The two are assembled. To the inner lead 2
4, 24... May be formed integrally.
【００１４】[0014]
【発明の効果】本発明によれば、半導体素子が搭載され
る搭載面が底面に形成され、通常の絞り加工では形成困
難な程度に深い凹部を、絞り加工によって放熱板に容易
に形成できる。このため、この放熱板が装着されたリー
ドフレームは、良好な生産性を奏することができ、リー
ドフレームの生産コスト、更には半導体装置の生産コス
トの低減を図ることができる。また、このリードフレー
ムに搭載された半導体素子等を樹脂封止して得られた半
導体装置では、凹部の底面に対応する放熱板の表面を封
止樹脂の表面から露出でき、放熱性を向上できる。更
に、封止樹脂と放熱板との剥離も効果的に防止できるた
め、放熱性の向上と相俟って半導体装置の信頼性を向上
できる。According to the present invention, the mounting surface on which the semiconductor element is mounted is formed on the bottom surface, and a concave portion deep enough to be difficult to form by ordinary drawing can be easily formed on the heat sink by drawing. Therefore, the lead frame on which the heat sink is mounted can achieve good productivity, and the production cost of the lead frame and the production cost of the semiconductor device can be reduced. Further, in a semiconductor device obtained by resin-sealing a semiconductor element or the like mounted on the lead frame, the surface of the heat radiating plate corresponding to the bottom surface of the concave portion can be exposed from the surface of the sealing resin, and heat radiation can be improved. . Further, since the separation between the sealing resin and the heat radiating plate can be effectively prevented, the reliability of the semiconductor device can be improved in combination with the improvement of the heat radiating property.
【図１】本発明に係るリードフレームの一例を示す断面
図である。FIG. 1 is a sectional view showing an example of a lead frame according to the present invention.
【図２】図１に示すリードフレームに装着された放熱板
の正面図である。FIG. 2 is a front view of a heat sink mounted on the lead frame shown in FIG. 1;
【図３】放熱板の凹部に形成する貫通孔の形状を示す部
分拡大正面図及び部分拡大断面図である。FIGS. 3A and 3B are a partially enlarged front view and a partially enlarged sectional view showing a shape of a through hole formed in a concave portion of the heat sink. FIGS.
【図４】放熱板の凹部に形成する貫通孔の他の形状を示
す部分拡大正面図及び部分拡大断面図である。FIG. 4 is a partially enlarged front view and a partially enlarged cross-sectional view showing another shape of a through hole formed in a concave portion of a heat sink.
【図５】本発明に係る半導体装置の一例を示す断面図で
ある。FIG. 5 is a sectional view showing an example of a semiconductor device according to the present invention.
【図６】本発明に係る半導体装置の他の例を示す断面図
である。FIG. 6 is a sectional view showing another example of the semiconductor device according to the present invention.
【図７】従来の半導体装置を示す断面図である。FIG. 7 is a sectional view showing a conventional semiconductor device.
【図８】従来の半導体装置を改良した半導体装置の断面
図である。FIG. 8 is a cross-sectional view of a semiconductor device obtained by improving a conventional semiconductor device.
【図９】図８に示す半導体装置に用いた放熱板の正面図
である。9 is a front view of a heat sink used in the semiconductor device shown in FIG.
１０ リードフレーム １２ 半導体素子 １４ 底面 １６ 凹部 １８ 放熱板 ２０ 周縁部 ２２ 接着テープ ２４ インナーリード ２６，２８ 貫通孔 ２８ａ スリット ３０ 張出部 ３２ ワイヤ ３４ 表面 ３６ 封止樹脂 DESCRIPTION OF SYMBOLS 10 Lead frame 12 Semiconductor element 14 Bottom surface 16 Concave part 18 Heat sink 20 Peripheral part 22 Adhesive tape 24 Inner lead 26, 28 Through hole 28a Slit 30 Projection part 32 Wire 34 Surface 36 Sealing resin
Claims (7)
と、前記放熱板に搭載された半導体素子とワイヤ等によ
って電気的に接続されるインナーリードとを具備するリ
ードフレームにおいて、 該放熱板の半導体素子が搭載される搭載面が、絞り加工
によって形成された矩形状の凹部の底面に形成され、 且つ前記凹部の各角部の内壁部を形成する曲折部分が、
抜き落とされて貫通孔に形成されていることを特徴とす
るリードフレーム。1. A lead frame comprising: a heat sink on which a rectangular semiconductor element is mounted; and inner leads electrically connected to the semiconductor element mounted on the heat sink by wires or the like. The mounting surface on which the semiconductor element is mounted is formed on the bottom surface of a rectangular concave portion formed by drawing, and a bent portion forming an inner wall portion of each corner of the concave portion,
A lead frame, which is removed and formed in a through hole.
分が、部分的に抜き落とされて貫通孔又はスリットに形
成されている請求項１記載のリードフレーム。2. The lead frame according to claim 1, wherein the bent portion forming the inner wall portion of the straight portion of the concave portion is partially cut out and formed in a through hole or a slit.
が、インナーリードと別体に形成された放熱板であっ
て、 前記放熱板とインナーリードの先端部とが接着テープ等
の接着部材によって接着されて一体化されている請求項
１又は請求項２記載のリードフレーム。3. A heat radiating plate on which a rectangular semiconductor element is mounted is a heat radiating plate formed separately from an inner lead, wherein the heat radiating plate and a tip end of the inner lead are an adhesive member such as an adhesive tape. 3. The lead frame according to claim 1, wherein the lead frame is integrated by bonding.
と、前記放熱板に搭載された半導体素子とワイヤ等によ
って電気的に接続されたインナーリードとが、封止樹脂
によって封止された半導体装置において、 該半導体素子が、前記放熱板に絞り加工によって形成さ
れた矩形状の凹部の底面に搭載され、 且つ前記凹部の各角部の内壁部を形成する曲折部分が、
抜き落とされて貫通孔に形成されていることを特徴とす
る半導体装置。4. A heat sink on which a rectangular semiconductor element is mounted and an inner lead electrically connected to the semiconductor element mounted on the heat sink by a wire or the like are sealed with a sealing resin. In the semiconductor device, the semiconductor element is mounted on a bottom surface of a rectangular concave portion formed by drawing on the heat sink, and a bent portion forming an inner wall portion at each corner of the concave portion is
A semiconductor device characterized by being drawn out and formed in a through hole.
分が、部分的に抜き落とされて貫通孔又はスリットに形
成されている請求項４記載の半導体装置。5. The semiconductor device according to claim 4, wherein the bent portion forming the inner wall portion of the straight portion of the concave portion is partially removed and formed in a through hole or a slit.
封止樹脂の表面から露出している請求項４又は請求項５
記載の半導体装置。6. The surface of the heat sink corresponding to the bottom surface of the recess,
6. The semiconductor device according to claim 4, which is exposed from the surface of the sealing resin.
13. The semiconductor device according to claim 1.
が、インナーリードと別体に形成された放熱板であっ
て、 前記放熱板とインナーリードの先端部とが接着テープ等
の接着部材によって接着されて一体化されている請求項
４〜６のいずれか一項記載の半導体装置。7. A radiator plate on which a rectangular semiconductor element is mounted is a radiator plate formed separately from the inner lead, wherein the radiator plate and the tip of the inner lead are bonded by an adhesive member such as an adhesive tape. The semiconductor device according to any one of claims 4 to 6, wherein the semiconductor device is bonded and integrated with each other.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000180858A JP3533363B2 (en) | 2000-06-16 | 2000-06-16 | Lead frame and semiconductor device |
| KR1020010021713A KR100732021B1 (en) | 2000-06-16 | 2001-04-23 | Lead frame and semiconductor device |
| TW090114612A TW508781B (en) | 2000-06-16 | 2001-06-15 | Lead frame and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000180858A JP3533363B2 (en) | 2000-06-16 | 2000-06-16 | Lead frame and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001358275A true JP2001358275A (en) | 2001-12-26 |
| JP3533363B2 JP3533363B2 (en) | 2004-05-31 |
Family
ID=18681865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000180858A Expired - Fee Related JP3533363B2 (en) | 2000-06-16 | 2000-06-16 | Lead frame and semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3533363B2 (en) |
| KR (1) | KR100732021B1 (en) |
| TW (1) | TW508781B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008034881A (en) * | 2007-10-18 | 2008-02-14 | Matsushita Electric Ind Co Ltd | Resin-sealed semiconductor apparatus and its manufacturing method |
| CN107852833A (en) * | 2015-09-29 | 2018-03-27 | 日立汽车系统株式会社 | The manufacture method of electronic-controlled installation and Vehicular electronic control unit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0134933B1 (en) * | 1994-10-10 | 1998-04-20 | 황인길 | Semiconductor package |
| KR0183649B1 (en) * | 1996-05-15 | 1999-03-20 | 이대원 | Leadframe assembly and semiconductor device using it |
| KR20000002053A (en) * | 1998-06-16 | 2000-01-15 | 윤종용 | High heat resistant semiconductor package |
-
2000
- 2000-06-16 JP JP2000180858A patent/JP3533363B2/en not_active Expired - Fee Related
-
2001
- 2001-04-23 KR KR1020010021713A patent/KR100732021B1/en active IP Right Grant
- 2001-06-15 TW TW090114612A patent/TW508781B/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008034881A (en) * | 2007-10-18 | 2008-02-14 | Matsushita Electric Ind Co Ltd | Resin-sealed semiconductor apparatus and its manufacturing method |
| JP4601656B2 (en) * | 2007-10-18 | 2010-12-22 | パナソニック株式会社 | Resin-sealed semiconductor device and manufacturing method thereof |
| CN107852833A (en) * | 2015-09-29 | 2018-03-27 | 日立汽车系统株式会社 | The manufacture method of electronic-controlled installation and Vehicular electronic control unit |
| JPWO2017056722A1 (en) * | 2015-09-29 | 2018-04-05 | 日立オートモティブシステムズ株式会社 | Manufacturing method of electronic control device or in-vehicle electronic control device |
| CN107852833B (en) * | 2015-09-29 | 2020-10-20 | 日立汽车系统株式会社 | Electronic control device and method for manufacturing in-vehicle electronic control device |
| US10881014B2 (en) | 2015-09-29 | 2020-12-29 | Hitachi Automotive Systems, Ltd. | Electronic control device, and manufacturing method for vehicle-mounted electronic control device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3533363B2 (en) | 2004-05-31 |
| KR100732021B1 (en) | 2007-06-27 |
| KR20010113462A (en) | 2001-12-28 |
| TW508781B (en) | 2002-11-01 |
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