JP2001351910A - 基板処理装置 - Google Patents
基板処理装置Info
- Publication number
- JP2001351910A JP2001351910A JP2000168425A JP2000168425A JP2001351910A JP 2001351910 A JP2001351910 A JP 2001351910A JP 2000168425 A JP2000168425 A JP 2000168425A JP 2000168425 A JP2000168425 A JP 2000168425A JP 2001351910 A JP2001351910 A JP 2001351910A
- Authority
- JP
- Japan
- Prior art keywords
- steam
- gas
- hydrogen gas
- reaction chamber
- oxygen gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 238000002485 combustion reaction Methods 0.000 claims abstract description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 35
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 29
- 238000007254 oxidation reaction Methods 0.000 abstract description 29
- 239000010408 film Substances 0.000 abstract description 20
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 206010003497 Asphyxia Diseases 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000168425A JP2001351910A (ja) | 2000-06-06 | 2000-06-06 | 基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000168425A JP2001351910A (ja) | 2000-06-06 | 2000-06-06 | 基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001351910A true JP2001351910A (ja) | 2001-12-21 |
| JP2001351910A5 JP2001351910A5 (enExample) | 2005-10-13 |
Family
ID=18671432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000168425A Pending JP2001351910A (ja) | 2000-06-06 | 2000-06-06 | 基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001351910A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007129240A (ja) * | 1997-03-05 | 2007-05-24 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR101039163B1 (ko) | 2005-11-15 | 2011-06-03 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리 시스템 및 기화기 |
| KR20230135517A (ko) | 2022-03-16 | 2023-09-25 | 도쿄엘렉트론가부시키가이샤 | 열처리 장치 및 열처리 방법 |
-
2000
- 2000-06-06 JP JP2000168425A patent/JP2001351910A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007129240A (ja) * | 1997-03-05 | 2007-05-24 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR101039163B1 (ko) | 2005-11-15 | 2011-06-03 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리 시스템 및 기화기 |
| KR20230135517A (ko) | 2022-03-16 | 2023-09-25 | 도쿄엘렉트론가부시키가이샤 | 열처리 장치 및 열처리 방법 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050329 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050601 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060529 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060620 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20061013 |