JP2001345458A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JP2001345458A JP2001345458A JP2000161266A JP2000161266A JP2001345458A JP 2001345458 A JP2001345458 A JP 2001345458A JP 2000161266 A JP2000161266 A JP 2000161266A JP 2000161266 A JP2000161266 A JP 2000161266A JP 2001345458 A JP2001345458 A JP 2001345458A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- electrode
- bus bar
- solder
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池に関し、特
に半導体基板の一主面側および／または他の主面側に電
極を設けた太陽電池に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly, to a solar cell provided with electrodes on one principal surface and / or another principal surface of a semiconductor substrate.
【０００２】[0002]
【従来の技術とその問題点】一般的な太陽電池素子の構
造を図３に示す。図３中、１は一導電型（例えばＰ型）
を示す半導体基板、１ａは半導体基板１の表面部分にリ
ン原子が高濃度に拡散された他の導電型を呈する領域、
２は一主面側に形成された反射防止膜、３は半導体接合
部である。この反射防止膜２は表面電極５に相当する部
分がエッチングされてその部分に、もしくはエッチング
されずにその上から表面電極５が形成される。この表面
電極５は幅広の線状に二本設けられたバスバー部（不図
示）と、このバスバー部に交差して多数本形成されたフ
ィンガー部（不図示）とで構成されている。なお、図３
中、４は裏面電極である。2. Description of the Related Art FIG. 3 shows a structure of a general solar cell element. In FIG. 3, 1 is one conductivity type (for example, P type).
A semiconductor substrate, 1a is a region exhibiting another conductivity type in which phosphorus atoms are diffused at a high concentration in a surface portion of the semiconductor substrate 1,
Reference numeral 2 denotes an antireflection film formed on one principal surface side, and reference numeral 3 denotes a semiconductor junction. In the antireflection film 2, a portion corresponding to the surface electrode 5 is etched, and the surface electrode 5 is formed on the portion or without being etched. The surface electrode 5 is composed of two bus bar portions (not shown) provided in a wide linear shape, and a plurality of finger portions (not shown) intersecting the bus bar portions. Note that FIG.
Reference numeral 4 denotes a back electrode.
【０００３】この種太陽電池素子の電極パターンは配線
抵抗が極小になるように設計される。すなわち、表面電
極５で被覆される領域が最小になり、且つ配線抵抗も最
小になるように設計される。さらに、複数の太陽電池同
志を線状の銅箔などから成る配線材の一端部を表面電極
５のバスバー部５ａに半田付けするとともに、銅箔の他
端部を他の太陽電池の裏面電極４に半田付けすることに
よって接続するために、電極パターン４、５は半田でコ
ートされる。The electrode pattern of this type of solar cell element is designed so that the wiring resistance is minimized. That is, it is designed such that the area covered by the surface electrode 5 is minimized and the wiring resistance is also minimized. Further, one end of a wiring member made of a linear copper foil or the like of a plurality of solar cells is soldered to the bus bar portion 5a of the surface electrode 5, and the other end of the copper foil is connected to the back electrode 4 of another solar cell. In order to connect by soldering, the electrode patterns 4 and 5 are coated with solder.
【０００４】従来の太陽電池における代表的な電極パタ
ーンを図４に示す。電極パターン５は安定性と配線を考
慮して半田で全面コートされている。表面電極５である
骨状のパターン以外のところでできるだけ光を取り込む
ために、反射防止膜２が設けられる。太陽電池素子がシ
リコンのとき単一層で反射防止膜２を形成すると、外観
上例えば青、赤、黒、グレーに見える。一方、表面電極
５の骨状パターンの色は半田コートの色となる。なお、
図４中、５ａがバスバー部で、５ｂがフィンガー部であ
る。FIG. 4 shows a typical electrode pattern in a conventional solar cell. The electrode pattern 5 is entirely coated with solder in consideration of stability and wiring. The anti-reflection film 2 is provided in order to take in light as much as possible other than the bone-shaped pattern which is the surface electrode 5. When the anti-reflection film 2 is formed of a single layer when the solar cell element is silicon, it looks, for example, blue, red, black, and gray in appearance. On the other hand, the color of the skeleton pattern of the surface electrode 5 is the color of the solder coat. In addition,
In FIG. 4, 5a is a bus bar portion and 5b is a finger portion.
【０００５】近年、住宅用、建材用等に太陽光発電が採
り入れられている。このときモジュールに組み込まれる
太陽電池素子の美観もデザイン上大きな要素を占める。In recent years, photovoltaic power generation has been adopted for houses, building materials and the like. At this time, the appearance of the solar cell element incorporated in the module also occupies a large factor in the design.
【０００６】ところが、上に述べたように表面電極５の
骨状パターンの色と、反射防止膜２部分の色とが異なる
ので、デザイン設計上の制約があった。さらに、コスト
ダウンのために、半田の使用量削減も課題である。However, as described above, since the color of the skeleton pattern of the surface electrode 5 and the color of the antireflection film 2 are different, there are restrictions on the design design. Another problem is to reduce the amount of solder used for cost reduction.
【０００７】本発明は、このような従来技術の問題点に
鑑みてなされたものであり、電極５の骨状パターンの色
と、この電極５の骨状パターン以外の部分の着とが異な
るとともに、必要以上の半田を使用しているために高コ
ストになるという従来の問題点を解消した太陽電池を提
供することを目的とする。The present invention has been made in view of such problems of the prior art, and the color of the skeleton pattern of the electrode 5 is different from that of the electrode 5 on the part other than the skeleton pattern. It is another object of the present invention to provide a solar cell that solves the conventional problem of high cost due to the use of more solder than necessary.
【０００８】[0008]
【問題点を解決するための手段】上記目的を達成するた
めに、請求項１に係る太陽電池では、半導体基板の一主
面側および／または他の主面側にフィンガー部とバスバ
ー部とから成る電極を設け、このバスバー部の所定箇所
に配線材を接続した太陽電池において、前記配線材の接
続箇所を除いて前記バスバー部を塗布剤でコートしたこ
とを特徴とする。In order to achieve the above object, in the solar cell according to the first aspect, a finger portion and a bus bar portion are provided on one main surface side and / or another main surface side of the semiconductor substrate. In a solar cell in which an electrode is provided and a wiring member is connected to a predetermined portion of the bus bar portion, the bus bar portion is coated with a coating material except for the connection portion of the wiring member.
【０００９】上記太陽電池では、前記塗布剤が有色の半
田レジスト剤から成ることが望ましい。In the above solar cell, it is preferable that the coating agent is a colored solder resist.
【００１０】[0010]
【発明の実施の形態】以下、本発明を添付図面にもとづ
き詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the accompanying drawings.
【００１１】図１は本発明に係る太陽電池の一実施形態
を示す図である。本発明に係る太陽電池では、半導体基
板１の一主面側にあばら骨状などの表面電極５を設けた
太陽電池であって、前記表面電極５を形成した後、表面
電極５のパターン上に塗布剤６をコートした電極パター
ンを形成する。FIG. 1 is a view showing one embodiment of a solar cell according to the present invention. The solar cell according to the present invention is a solar cell in which a surface electrode 5 such as ribs is provided on one main surface side of the semiconductor substrate 1. After the surface electrode 5 is formed, the surface electrode 5 is coated on a pattern of the surface electrode 5. An electrode pattern coated with the agent 6 is formed.
【００１２】表面電極５は、間隔を隔てて二本に形成さ
れた幅広状のバスバー部５ａとこのバスバー部５ａと交
差するように幅狭状に多数形成されたフィンガー部５ｂ
とで構成される。The surface electrode 5 includes two wide busbar portions 5a formed at a distance from each other and a plurality of finger portions 5b formed in a narrow shape so as to intersect with the busbar portions 5a.
It is composed of
【００１３】塗布剤６は例えば緑色を呈する有色の半田
レジストなどで構成される。この半田レジストは例えば
顔料が含まれたアクリル系樹脂などの紫外線硬化型樹脂
などで構成される。The coating material 6 is made of, for example, a colored solder resist exhibiting a green color. This solder resist is made of, for example, an ultraviolet curable resin such as an acrylic resin containing a pigment.
【００１４】この塗布剤６は配線に必要な部分、例えば
太陽電池素子に配線材（不図示）を接続するための半田
被着部などを除いて塗布され、半田レジストを兼ねたも
のとする。すなわち、図１の６で示す部分が塗布剤がコ
ートされた部分であり、８で示す部分が配線のために塗
布剤をコートせず、半田コートされた部分である。すな
わち、この太陽電池ではバスバー部５ａの複数箇所に配
線材（不図示）がブリッジ状に接続される。塗布剤は、
表面電極５のバスバー部５ａのみに塗布しても半田使用
量の削減になるが、フィンガー部５ｂにも塗布するとさ
らに半田使用量の削減になる。The coating material 6 is applied except for a portion necessary for wiring, for example, a solder attachment portion for connecting a wiring member (not shown) to the solar cell element, and also serves as a solder resist. That is, the portion indicated by 6 in FIG. 1 is the portion coated with the coating agent, and the portion indicated by 8 is the portion coated with solder without coating the coating agent for wiring. That is, in this solar cell, a wiring member (not shown) is connected in a bridge shape to a plurality of portions of the bus bar portion 5a. The coating agent is
Applying only to the bus bar portion 5a of the surface electrode 5 will reduce the amount of solder used, but applying also to the finger portion 5b will further reduce the amount of solder used.
【００１５】図２は本発明の太陽電池の製造方法を素子
の断面図で示したものである。まず、半導体基板１とし
て例えば１０ｃｍ×１０ｃｍもしくは１５ｃｍ×１５ｃ
ｍで厚さは３００μｍ〜５００μｍのものを用意する
（図２（ａ）参照）。この半導体基板１は、単結晶また
は多結晶シリコンなどからなる。このシリコン基板１
は、ボロン（Ｂ）などの一導電型半導体不純物を１×１
０16〜１×１０18ａｔｏｍｓ／ｃｍ3程度含有し、比抵
抗１．５Ωｃｍ程度の基板である。単結晶シリコン基板
の場合は引き上げ法などによって形成され、多結晶シリ
コン基板の場合は鋳造法などによって形成される。多結
晶シリコン基板は、大量生産が可能で製造コスト面で単
結晶シリコン基板よりも有利である。引き上げ法や鋳造
法によって形成されたインゴットを３００〜５００μｍ
程度の厚みにスライスして、１０ｃｍ×１０ｃｍもしく
は１５ｃｍ×１５ｃｍ程度の大きさに切断してシリコン
基板とする。FIG. 2 is a cross-sectional view of a device for illustrating a method of manufacturing a solar cell according to the present invention. First, as the semiconductor substrate 1, for example, 10 cm × 10 cm or 15 cm × 15 c
A film having a thickness of 300 m to 500 m is prepared (see FIG. 2A). This semiconductor substrate 1 is made of single crystal or polycrystalline silicon. This silicon substrate 1
Means that one impurity of one conductivity type semiconductor such as boron (B) is 1 × 1
The substrate contains about 0 16 to 1 × 10 18 atoms / cm 3 and has a specific resistance of about 1.5 Ωcm. In the case of a single crystal silicon substrate, it is formed by a pulling method or the like, and in the case of a polycrystalline silicon substrate, it is formed by a casting method or the like. Polycrystalline silicon substrates can be mass-produced and are more advantageous than single-crystal silicon substrates in terms of manufacturing cost. 300-500μm of ingot formed by pulling method or casting method
It is sliced to a thickness of about 10 cm and cut into a size of about 10 cm × 10 cm or 15 cm × 15 cm to obtain a silicon substrate.
【００１６】次に、シリコン基板１を拡散炉中に配置し
て、オキシ塩化リン（ＰＯＣｌ3）などの中で加熱する
ことによって、シリコン基板１の表面部分にリン原子を
拡散させて他の導電型を呈する領域１ａを形成し、半導
体接合部３を形成する（図２（ｂ）参照）。この他の導
電型を呈する領域１ａは、０．２〜０．５μｍ程度の深
さに形成され、シート抵抗が４０Ω／□以上になるよう
に形成される。Next, the silicon substrate 1 is placed in a diffusion furnace and heated in phosphorus oxychloride (POCl 3 ) to diffuse phosphorus atoms into the surface portion of the silicon substrate 1 to form another conductive material. A region 1a having a mold is formed, and a semiconductor junction 3 is formed (see FIG. 2B). The region 1a exhibiting another conductivity type is formed at a depth of about 0.2 to 0.5 μm, and is formed so that the sheet resistance becomes 40Ω / □ or more.
【００１７】次に、シリコン基板１の一主面側の他の導
電型を呈する領域１ａのみを残して他の部分は、フッ酸
と硝酸を主成分とするエッチング液に浸漬して除去した
後、純水で洗浄する（図２（ｃ））。Next, after leaving only the region 1a exhibiting another conductivity type on one main surface side of the silicon substrate 1, the other portion is removed by immersion in an etching solution containing hydrofluoric acid and nitric acid as main components. Then, the substrate is washed with pure water (FIG. 2C).
【００１８】次に、シリコン基板１の一主面側に反射防
止膜２を形成する（図２（ｄ）参照）。この反射防止膜
２は、たとえば窒化シリコン膜などからなり、シランと
アンモニアとの混合ガスを用いたプラズマＣＶＤ法など
で形成される。この反射防止膜２は、シリコン基板１の
表面で光が反射するのを防止して、シリコン基板１内に
光を有効に取り込むために設ける。Next, an antireflection film 2 is formed on one main surface of the silicon substrate 1 (see FIG. 2D). The antireflection film 2 is made of, for example, a silicon nitride film, and is formed by a plasma CVD method using a mixed gas of silane and ammonia. The antireflection film 2 is provided to prevent light from being reflected on the surface of the silicon substrate 1 and to effectively take in light into the silicon substrate 1.
【００１９】そして、この反射防止膜２は電極５に相当
する部分をエッチングした上で電極材料５を塗布して焼
成する（図２（ｅ）参照）。もしくはこの反射防止膜２
上に直接電極材料５を塗布して焼成する。この電極材料
４、５は銀粉末と有機ビヒクルにガラスフリットを銀１
００重量部に対して０．１〜５重量部添加してペースト
状にしたものをスクリーン印刷法で印刷して６００〜８
００℃で１〜３０分程度焼成することにより焼き付けら
れる。このガラスフリットは、ＰｂＯ、Ｂ2Ｏ3、ＳｉＯ
2のうち少なくとも一種を含む軟化点が５００度以下の
ものなどからなる。電極材料４、５は受光面に配線抵抗
が極小になるように配設される。すなわち受光面は最大
に、配線抵抗は最小になるように設計されたものであ
る。太陽電池素子の大きさは例えば１５ｃｍ×１５ｃｍ
の大きさではバスバー部はフィンガー部に垂直に２本配
設されている。Then, the antireflection film 2 is etched at a portion corresponding to the electrode 5, and then coated with the electrode material 5 and baked (see FIG. 2E). Or this antireflection film 2
The electrode material 5 is directly applied thereon and fired. The electrode materials 4 and 5 are made of silver powder and an organic vehicle with glass frit of silver 1
A paste obtained by adding 0.1 to 5 parts by weight to 00 parts by weight is printed by a screen printing method, and
It is baked by baking at 00 ° C. for about 1 to 30 minutes. This glass frit is made of PbO, B 2 O 3 , SiO
The softening point containing at least one of the two is 500 degrees or less. The electrode materials 4 and 5 are disposed on the light receiving surface such that the wiring resistance is minimized. That is, the light receiving surface is designed to be maximum and the wiring resistance is to be minimum. The size of the solar cell element is, for example, 15 cm x 15 cm
In the case of the size, two bus bar portions are arranged perpendicular to the finger portion.
【００２０】その後、図１の一主面側の平面図に示すよ
うに、電極パターンと合わせた半田レジストを兼ねた塗
布剤をコートする。塗布剤は電極パターンに重ね合わせ
るように印刷などによってコートする。コートの方法は
例えば印刷方式で行なう。形成される電極の寸法より若
干大きい、例えば２００μｍ幅であれば２１０μｍ幅と
して設計されたパターンをもつスクリーンマスクをとお
して塗布剤を印刷する。Thereafter, as shown in a plan view of one main surface side of FIG. 1, a coating agent which also serves as a solder resist matched with the electrode pattern is coated. The coating agent is coated by printing or the like so as to overlap the electrode pattern. The coating method is, for example, a printing method. The coating agent is printed through a screen mask having a pattern designed to be slightly larger than the size of the electrode to be formed, for example, 210 μm if it is 200 μm wide.
【００２１】[0021]
【実施例】抵抗１．５Ωｃｍの半導体基板内の一主面側
に、Ｐを１×１０17ａｔｏｍｓ／ｃｍ3拡散させて厚み
８５０Åの窒化シリコン膜が形成された１５ｃｍ×１５
ｃｍの太陽電池素子に銀１００重量部に対してガラスフ
リットを３重量部含有した銀粉末を有機ビヒクルから成
る銀ペーストをバスバーはフィンガーに垂直に２本配設
されているパターンを印刷して７５０℃１５分で焼き付
けた後、塗布剤として、図１に示したように、電極パタ
ーンに合わせて塗布剤の印刷、乾燥を行なった。なお、
電極パターンの寸法はフィンガー部が２００μｍ×１４
７ｍｍでバスバー部が２０００μｍ×１４７ｍｍであ
る。塗布剤は市販の緑系統の半田レジスト、すなわちＵ
ＳＲ‐２Ｇを使用した。この半田レジストをバスバー部
上に長さ３ｍｍに３箇所計９ｍｍ塗布して半田が被着さ
れないようにした。このような太陽電池における半田デ
ィップ後の半田使用量を表１に示し、従来の太陽電池に
おける半田ディップ後の半田使用量を表２に示す。半田
ディップは半田液面と太陽電池種面を垂直にして浸漬
し、２００℃の半田浴に１０秒間浸漬した後に引き出し
て室温まで冷却したものである。また、セルＮｏ．１〜
６は同一パターンの太陽電池で浸漬条件も同一にしたも
のである。On one main surface side of the EXAMPLES in the semiconductor substrate resistor 1.5Ωcm, 15cm × 15 silicon nitride film having a thickness of 850Å was formed by 1 × 10 17 atoms / cm 3 is diffused P
A silver paste comprising an organic vehicle and silver powder containing 3 parts by weight of glass frit with respect to 100 parts by weight of silver is printed on a solar cell element of 750 cm by printing a pattern in which two bus bars are vertically arranged on fingers. After baking at 15 ° C. for 15 minutes, the coating was printed and dried in accordance with the electrode pattern as shown in FIG. In addition,
The size of the electrode pattern is 200 μm × 14 for the finger part.
The bus bar part is 2000 μm × 147 mm at 7 mm. The coating agent is a commercially available green-based solder resist, that is, U
SR-2G was used. This solder resist was applied to the bus bar portion at a total of 9 mm in three places at a length of 3 mm to prevent the solder from being applied. Table 1 shows the amount of solder used after dip soldering in such a solar cell, and Table 2 shows the amount of solder used after solder dip in a conventional solar cell. The solder dip is obtained by dipping the solder liquid surface and the solar cell seed surface perpendicularly, dipping it in a solder bath at 200 ° C. for 10 seconds, and then pulling out and cooling to room temperature. In addition, the cell No. 1 to
Reference numeral 6 denotes a solar cell having the same pattern under the same immersion conditions.
【００２２】[0022]
【表１】 [Table 1]
【００２３】[0023]
【表２】 [Table 2]
【００２４】表１、表２から明らかなように、図１に示
したパターンを電極パターンの上に使用すれば半田の使
用量が大幅に削減できることがわかる。As is clear from Tables 1 and 2, it can be seen that the use of the pattern shown in FIG. 1 on the electrode pattern can greatly reduce the amount of solder used.
【００２５】[0025]
【発明の効果】以上、詳細に説明したように、この発明
に係る太陽電池によれば、半導体基板の一主面側および
／または他の主面側にフィンガー部とバスバー部とから
成る電極を設け、このバスバー部の所定箇所に配線材を
接続する太陽電池において、前記配線材の接続箇所を除
いて前記バスバー部を塗布剤でコートしたことから、半
田の使用量が大幅に削減され、さらに半田に濡れないパ
ターンの部分は着色された塗布剤でコートされるので美
観上好ましいものとなる。As described in detail above, according to the solar cell of the present invention, an electrode comprising a finger portion and a bus bar portion is provided on one main surface side and / or another main surface side of a semiconductor substrate. In the solar cell, in which the wiring member is connected to a predetermined portion of the bus bar portion, since the bus bar portion is coated with the coating agent except for the connection portion of the wiring member, the amount of solder used is significantly reduced, The portion of the pattern that does not get wet with the solder is coated with a colored coating agent, which is aesthetically preferable.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明に係る太陽電池の一実施形態を示す平面
図である。FIG. 1 is a plan view showing one embodiment of a solar cell according to the present invention.
【図２】本発明に係る太陽電池の製造方法を示す図であ
る。FIG. 2 is a view illustrating a method of manufacturing a solar cell according to the present invention.
【図３】従来の太陽電池を示す図である。FIG. 3 is a view showing a conventional solar cell.
【図４】従来の太陽電池の電極パターンを示す図であ
る。FIG. 4 is a diagram showing an electrode pattern of a conventional solar cell.
１：半導体基板、１ａ：リン原子が拡散され他の導電型
を呈する領域、２：反射防止膜、３：半導体接合部、
４：裏面材料、５：表面電極、５ａ：バスバー電極、５
ｂ：フィンガー電極、６：塗布剤、７：半田コート部1: a semiconductor substrate, 1a: a region where phosphorus atoms are diffused and exhibit another conductivity type, 2: an antireflection film, 3: a semiconductor junction,
4: Back material, 5: Front electrode, 5a: Bus bar electrode, 5
b: finger electrode, 6: coating agent, 7: solder coating
───────────────────────────────────────────────────── フロントページの続き (72)発明者 白沢 勝彦 滋賀県八日市市蛇溝町長谷野1166番地の６ 京セラ株式会社滋賀工場八日市ブロック 内 Ｆターム(参考） 5F051 AA02 BA11 FA10 FA13 FA14 FA30 GA04 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Katsuhiko Shirasawa, Inventor 1166, Haseno, Snakegrove Town, Yokaichi City, Shiga Prefecture F-term (reference) 5F051 AA02 BA11 FA10 FA13 FA14 FA30 GA04
Claims (2)
の主面側にフィンガー部とバスバー部とから成る電極を
設け、このバスバー部の所定箇所に配線材を接続した太
陽電池において、前記配線材の接続箇所を除いて前記バ
スバー部を塗布剤でコートしたことを特徴とする太陽電
池。1. A solar cell in which an electrode comprising a finger portion and a bus bar portion is provided on one main surface side and / or another main surface side of a semiconductor substrate, and a wiring member is connected to a predetermined portion of the bus bar portion. A solar cell, wherein the bus bar portion is coated with an application agent except for a connection portion of a wiring member.
成ることを特徴とする請求項１に記載の太陽電池。2. The solar cell according to claim 1, wherein the coating agent is made of a colored solder resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000161266A JP2001345458A (en) | 2000-05-30 | 2000-05-30 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000161266A JP2001345458A (en) | 2000-05-30 | 2000-05-30 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001345458A true JP2001345458A (en) | 2001-12-14 |
Family
ID=18665316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000161266A Pending JP2001345458A (en) | 2000-05-30 | 2000-05-30 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001345458A (en) |
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