JP2001345360A - 検査・解析方法および試料作製装置 - Google Patents

検査・解析方法および試料作製装置

Info

Publication number
JP2001345360A
JP2001345360A JP2000169049A JP2000169049A JP2001345360A JP 2001345360 A JP2001345360 A JP 2001345360A JP 2000169049 A JP2000169049 A JP 2000169049A JP 2000169049 A JP2000169049 A JP 2000169049A JP 2001345360 A JP2001345360 A JP 2001345360A
Authority
JP
Japan
Prior art keywords
sample
ion beam
substrate
laser
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000169049A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001345360A5 (enExample
Inventor
Hiroyasu Shichi
広康 志知
Satoshi Tomimatsu
聡 富松
Muneyuki Fukuda
宗行 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000169049A priority Critical patent/JP2001345360A/ja
Publication of JP2001345360A publication Critical patent/JP2001345360A/ja
Publication of JP2001345360A5 publication Critical patent/JP2001345360A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Sampling And Sample Adjustment (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2000169049A 2000-06-01 2000-06-01 検査・解析方法および試料作製装置 Pending JP2001345360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000169049A JP2001345360A (ja) 2000-06-01 2000-06-01 検査・解析方法および試料作製装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000169049A JP2001345360A (ja) 2000-06-01 2000-06-01 検査・解析方法および試料作製装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008323112A Division JP4877318B2 (ja) 2008-12-19 2008-12-19 検査・解析方法および試料作製装置

Publications (2)

Publication Number Publication Date
JP2001345360A true JP2001345360A (ja) 2001-12-14
JP2001345360A5 JP2001345360A5 (enExample) 2006-09-21

Family

ID=18671972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000169049A Pending JP2001345360A (ja) 2000-06-01 2000-06-01 検査・解析方法および試料作製装置

Country Status (1)

Country Link
JP (1) JP2001345360A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179165A (ja) * 2002-11-26 2004-06-24 Fei Co ターゲット修復用のイオンビーム
JP2004276103A (ja) * 2003-03-18 2004-10-07 Hitachi High-Technologies Corp 試料加工方法
WO2005003736A1 (ja) * 2003-07-08 2005-01-13 Sii Nanotechnology Inc. 薄片試料作製方法および複合荷電粒子ビーム装置
JP2006134879A (ja) * 2004-11-01 2006-05-25 General Motors Corp <Gm> 燃料電池水管理向上方法
JPWO2005003736A1 (ja) * 2003-07-08 2006-08-17 エスアイアイ・ナノテクノロジー株式会社 薄片試料作製方法および複合荷電粒子ビーム装置
US7095021B2 (en) 2003-06-19 2006-08-22 Hitachi High-Technologies Corporation Method, apparatus and system for specimen fabrication by using an ion beam
US7276691B2 (en) 2002-08-23 2007-10-02 Sii Nanotechnology Inc. Ion beam device and ion beam processing method
US7385206B2 (en) 2003-01-21 2008-06-10 Canon Kabushiki Kaisha Probe-holding apparatus, sample-obtaining apparatus, sample-processing apparatus, sample-processing method and sample-evaluating method
JP2010054456A (ja) * 2008-08-29 2010-03-11 Ulvac Japan Ltd 質量分析法、質量分析用試料の作製方法および作製装置
JP2012223825A (ja) * 2011-04-15 2012-11-15 Seiko Instruments Inc 単結晶ダイヤモンド切削刃具及びその製造方法、並びにｘ線タルボ干渉計用回折格子の製造方法
JP2013524466A (ja) * 2010-04-07 2013-06-17 エフ・イ−・アイ・カンパニー 組合せレーザおよび荷電粒子ビーム・システム
US10233548B2 (en) 2010-07-07 2019-03-19 Hitachi High-Technologies Corporation Charged particle beam device and sample production method
WO2024242075A1 (ja) * 2023-05-22 2024-11-28 浜松ホトニクス株式会社 顕微鏡装置
ES3010110A1 (es) * 2023-09-29 2025-04-01 Consejo Superior Investigacion Sistema de fabricacion de contactos electricos y metodo de fabricacion asociado

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276691B2 (en) 2002-08-23 2007-10-02 Sii Nanotechnology Inc. Ion beam device and ion beam processing method
JP2004179165A (ja) * 2002-11-26 2004-06-24 Fei Co ターゲット修復用のイオンビーム
US7531797B2 (en) 2003-01-21 2009-05-12 Canon Kabushiki Kaisha Probe-holding apparatus, sample-obtaining apparatus, sample-processing apparatus, sample-processing method and sample-evaluating method
US7385206B2 (en) 2003-01-21 2008-06-10 Canon Kabushiki Kaisha Probe-holding apparatus, sample-obtaining apparatus, sample-processing apparatus, sample-processing method and sample-evaluating method
JP2004276103A (ja) * 2003-03-18 2004-10-07 Hitachi High-Technologies Corp 試料加工方法
US7368729B2 (en) 2003-06-19 2008-05-06 Hitachi High-Technologies Corp. Method, apparatus and system for specimen fabrication by using an ion beam
US7095021B2 (en) 2003-06-19 2006-08-22 Hitachi High-Technologies Corporation Method, apparatus and system for specimen fabrication by using an ion beam
JPWO2005003736A1 (ja) * 2003-07-08 2006-08-17 エスアイアイ・ナノテクノロジー株式会社 薄片試料作製方法および複合荷電粒子ビーム装置
WO2005003735A1 (ja) * 2003-07-08 2005-01-13 Sii Nanotechnology Inc. 薄片試料作製方法および複合荷電粒子ビーム装置
WO2005003736A1 (ja) * 2003-07-08 2005-01-13 Sii Nanotechnology Inc. 薄片試料作製方法および複合荷電粒子ビーム装置
JP2006134879A (ja) * 2004-11-01 2006-05-25 General Motors Corp <Gm> 燃料電池水管理向上方法
JP2010054456A (ja) * 2008-08-29 2010-03-11 Ulvac Japan Ltd 質量分析法、質量分析用試料の作製方法および作製装置
JP2013524466A (ja) * 2010-04-07 2013-06-17 エフ・イ−・アイ・カンパニー 組合せレーザおよび荷電粒子ビーム・システム
EP2556526A4 (en) * 2010-04-07 2014-04-16 Fei Co COMBINATION OF A LASER AND A CHARGED PARTICLE BEAM SYSTEM
KR101854287B1 (ko) 2010-04-07 2018-05-03 에프이아이 컴파니 레이저 및 하전 입자 빔 시스템 결합
US10233548B2 (en) 2010-07-07 2019-03-19 Hitachi High-Technologies Corporation Charged particle beam device and sample production method
EP2592643B1 (en) * 2010-07-07 2020-09-02 Hitachi High-Tech Corporation Charged particle beam device and sample production method
JP2012223825A (ja) * 2011-04-15 2012-11-15 Seiko Instruments Inc 単結晶ダイヤモンド切削刃具及びその製造方法、並びにｘ線タルボ干渉計用回折格子の製造方法
WO2024242075A1 (ja) * 2023-05-22 2024-11-28 浜松ホトニクス株式会社 顕微鏡装置
ES3010110A1 (es) * 2023-09-29 2025-04-01 Consejo Superior Investigacion Sistema de fabricacion de contactos electricos y metodo de fabricacion asociado

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