JP2001323369A - Electron beam treatment system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the breakage of a window of an electron beam tube, the deposit composed of byproducts on the window, and further to suppress the temperature raise of a cover of the electron-beam tube, by cooling an irradiation part of the electron beam tube exposed to the treatment chamber. SOLUTION: The electron-beam is disposed in such a way that its irradiation part is exposed to the inside of the treatment chamber 2, and a material 6 to be treated is placed on a heating stand 5 provided inside the treatment chamber 2, and the material 6 to be treated is irradiated with an electron beam under heating. In this electron beam treatment system, the irradiation part of the electron-beam tube is constituted of: the cover part 3 covering the opening of the electron-beam tube and having an opening 31 for passing the electron beam; and the window part 4 covering the opening 31 and having an electron beam transmission part 41 for transmitting the electron beam. Moreover, a cooling block 7 for cooling the above irradiation part is disposed in a manner to be brought into contact with at least the above irradiation part excluding the electron beam transmission part 41. Further, a cooling-gas-blowing means for blowing cooling gas against the window part 4 is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam processing apparatus for performing various processes by irradiating an object to be processed with an electron beam, for example, an SOG (Spin On On) on a wafer.
The present invention relates to an electron beam processing apparatus that cures an interlayer insulating film of a semiconductor device called a “glass” film, forms another object to be processed, and the like.

[0002]

2. Description of the Related Art Conventionally, a hardening treatment of an SOG film is performed by heating, and it takes about one hour at 400 to 450.degree. If the heating temperature is increased to shorten the processing time, interdiffusion occurs at the interface between different thin films in the semiconductor device, and the electrical characteristics of the semiconductor device deteriorate, so that high-temperature processing cannot be performed.

On the other hand, it is conceivable to cure the SOG film only with an electron beam.
The temperature rise of the SOG film was at most about 20 ° C., which was insufficient for curing the film.

FIG. 7 is a diagram showing an example of an electron beam processing apparatus according to the prior art, which uses both heating and electron beam irradiation.

In FIG. 1, reference numeral 1 designates a high-voltage power supply (not shown) to generate an electron beam,
An electron beam tube for irradiating an object to be processed 6 with an electron beam;
2 is a processing chamber, 3 is a silicon cover provided to cover the opening of the electron beam tube 1, and 31 is an electron beam tube 1.
The opening 4 provided in the lid 3 for passing an electron beam emitted from the silicon into the processing chamber 2 has a plurality of transmission parts that cover the opening 31 and allow the electron beam to pass therethrough. A window portion 5 formed of a thin film having a thickness of about several μm, a heating table 5 on which a workpiece 6 is placed and heated, and 6 a workpiece. Here, the cover 3 and the window 4 constitute an irradiation part of the electron beam tube 1 as a whole.

According to this electron beam processing apparatus, the object to be processed 6 is heated by the heating table 5 and irradiated with the electron beam emitted from the electron beam tube 1 to be processed. Processing can be performed efficiently in a short time.

[0007]

However, in the above-described electron beam processing apparatus according to the prior art, the window 4 for transmitting the electron beam is structured to be exposed in the processing chamber 2. The heat for heating the object 6 is applied to the window 4.
It is also transmitted to high temperatures. Therefore, since the window 4 is formed of a thin film in order to efficiently emit an electron beam, if the window 4 exceeds 400 ° C., there is a problem that the window 4 is damaged in several hours.

In the course of processing, by-products generated in the processing chamber 2 adhere to the window 4, and if the temperature of the window 4 is high, the window 4 and the adhering matter formed by the by-products may not adhere to each other. When the reaction is accelerated and, for example, the deposit is an organic substance, the window portion 4 made of silicon may be oxidized or carbonized, and the window portion 4 is qualitatively changed and the mechanical strength is reduced. There was a problem of being damaged.

Further, when the lid 3 is heated together with the window 4, various members disposed inside the electron beam tube 1, such as an electron beam, are generated with the heating of the lid 3. Gas is released from the metal material in the provided electron beam tube or the glass body constituting the outer periphery of the electron beam tube, the gas pressure in the electron beam tube 1 increases, and the gas pressure in the electron beam tube 1 increases. There is also a problem that a discharge occurs and a desired electron beam output cannot be obtained.

SUMMARY OF THE INVENTION In order to solve the above-mentioned various problems, the present invention cools an irradiation portion exposed in a processing chamber of an electron beam tube, thereby damaging a window portion of the electron beam tube and producing by-products in the window portion. It is an object of the present invention to provide an electron beam processing apparatus which suppresses deposits made of, and further suppresses a rise in temperature of a lid of an electron beam tube.

[0011]

The present invention employs the following means in order to solve the above-mentioned problems.

The first means is to dispose an irradiation part of an electron beam tube in a processing chamber while exposing the same, and place the processing target on a heating table provided in the processing chamber to heat the processing target. In an electron beam processing device that irradiates an electron beam while
The irradiation unit of the electron beam tube includes a cover that covers the opening of the electron beam tube and has an opening that allows the passage of the electron beam, and a window that has an electron beam transmission unit that covers the opening and transmits the electron beam. A cooling block for cooling the irradiation unit is arranged in contact with the irradiation unit except the electron beam transmitting unit.

The second means is provided with a cooling gas blowing means for blowing a cooling gas toward the window.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a first embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a front sectional view showing the structure of an electron beam processing apparatus according to the present embodiment, FIG. 2 is an enlarged view of the vicinity of an irradiation part of the electron beam tube 1 shown in FIG. 1, and FIG. It is a bottom view which shows the structure of.

In these figures, reference numeral 41 denotes a plurality of electron beam transmitting portions formed in the window portion 4 so as to be thin and provided for transmitting the electron beam, and reference numeral 42 denotes an electron beam transmitting portion formed in the window portion 4. A non-transmissive portion 7, a cooling block provided in contact with the electron beam tube 1 so as to cover the irradiation portion except for the electron beam transmissive portion 41 exposed in the processing chamber 2;
Reference numeral 71 denotes a cooling pipe provided in the cooling block 7 for flowing a cooling fluid such as water, and 72 denotes a cooling block.
A cooling pipe that introduces a cooling gas such as an inert gas from the outside and blows out the cooling gas from a small hole 721 of the pipe exposed near the window 4. A plurality of small holes provided for spraying on the part 4;
Reference numeral 8 denotes a cooling gas inflow pipe through which a cooling gas is introduced, and reference numeral 9 denotes a cooling gas outflow pipe through which a cooling gas flows.

In these figures, other reference numerals correspond to the same reference numerals shown in FIG.

As described above, in this electron beam irradiation apparatus, since the cooling block 7 is disposed in contact with the irradiation section except for the electron beam transmission section 41 of the window 4, it is provided in the cooling block 7. The cooling fluid flowing through the cooling pipe 71 cools the lid 3 and the window 4, that is, the irradiating section, so that the temperature rise of the lid 3 and the window 4 can be prevented. Accordingly, since the temperature of the irradiating portion is suppressed from being raised, gas emission from the metal material in the electron beam tube and the glass body constituting the outer periphery of the electron beam tube is suppressed, and abnormal discharge and the like in the electron beam tube 1 are suppressed. Generation can be prevented.

In the vicinity of the window 4, a plurality of small holes 721 provided in the cooling pipe 72 exposed from the cooling block 7 are provided.
Since the cooling gas ejected from the air blows along the exposed surface of the window 4, the window 4 can be efficiently cooled and by-products generated in the processing chamber 2 adhere to the window 4. Can be prevented, the window portion 4 is oxidized or carbonized by the adhesion of by-products, and the mechanical strength decreases,
The window portion 4 can be prevented from being damaged.

Next, a second embodiment of the present invention will be described with reference to FIGS.

FIG. 4 is a front sectional view showing the structure of the electron beam processing apparatus according to the present embodiment, FIG. 5 is an enlarged view of the vicinity of an irradiation part of the electron beam tube 1 shown in FIG. 4, and FIG. It is a bottom view which shows the structure of.

In these figures, reference numeral 10 is provided so as to cover the irradiation part of the electron beam tube as a whole, contacts and cools a part of the cover part 3 of the irradiation part, A cooling block arranged to cool the window 4 with a cooling gas; 101, a cooling pipe provided in the cooling block 10 and provided for flowing a cooling fluid such as water;
Numeral 102 denotes a cooling pipe for introducing a cooling gas such as an inert gas from the outside of the cooling block 10 and ejecting the cooling gas from an opening exposed between the main body of the cooling block 10 and the lid 3, and is shown in FIG. The positions a and b of the cooling block 10 are shown in FIG.
A crossing the dashed line of the cooling block 10 shown in FIG.
b.

In these figures, the other symbols are those in FIG.
3 and FIG. 7 correspond to the configurations of the same reference numerals shown in FIG. 3 and FIG.

As described above, in this electron beam irradiation apparatus, since a part of the cooling block 10 is disposed in contact with the lid 3, the cooling flow flowing through the cooling pipe 101 provided inside the cooling block 10 is provided. The lid 3 is cooled by the fluid for use, and the cooling block 10 main body, the lid 3 and the window 4
Cooling gas is released from the opening of the cooling pipe 102 into the space formed between the cooling pipes 102 and the lid 3 and the window 4 can be cooled, thereby preventing the lid 3 and the window 4 from becoming hot. can do. As a result, gas emission from the metal material in the electron beam tube 1 and the glass body forming the outer periphery of the electron beam tube can be suppressed, and occurrence of abnormal discharge and the like in the electron beam tube 1 can be prevented.

In the vicinity of the window 4, the cooling gas discharged from the cooling pipe 102 blows along the exposed surface of the window 4, so that the window 4 is efficiently cooled and the processing chamber is provided in the window 4. 2 can be prevented from adhering, and the window 4 can be prevented from being oxidized or carbonized by the by-product, and the window 4 can be prevented from being damaged due to a decrease in mechanical strength. .

As described above, according to the invention of each of the above embodiments, the SOG film (the object to be processed) is subjected to the electron beam irradiation while being heated, thereby increasing the temperature of the irradiation part of the electron beam tube. For example, the curing process can be performed at a low temperature of 300 ° C. in a short time of about 10 minutes without damaging the window. Further, since the curing temperature of the object can be lowered, a cured film can be obtained without deteriorating the electrical characteristics of the semiconductor device.

[0027]

According to the first aspect of the present invention, in this electron beam irradiation apparatus, since the cooling block is arranged in contact with the irradiation section, the irradiation section is cooled by the cooling block, and the irradiation section is cooled. Temperature of the lid and the window can be prevented. As a result, the temperature of the irradiating part is increased, and gas emission from the metal material in the electron beam tube and the glass body constituting the outer periphery of the electron beam tube can be suppressed, and occurrence of abnormal discharge or the like in the electron beam tube can be prevented. .

According to the second aspect of the present invention, since the window is blown by the cooling gas, the window can be efficiently cooled and by-products generated in the processing chamber adhere to the window. It is possible to prevent the window portion from being oxidized or carbonized by the adhesion of the by-product, thereby reducing the mechanical strength and damaging the window portion.

[Brief description of the drawings]

FIG. 1 is a front sectional view showing a configuration of an electron beam processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged view of the vicinity of an irradiation part of the electron beam tube 1 shown in FIG.

FIG. 3 is a bottom view showing the configuration of the electron beam processing apparatus according to the first embodiment of the present invention.

FIG. 4 is a front sectional view showing a configuration of an electron beam processing apparatus according to a second embodiment of the present invention.

FIG. 5 is an enlarged view of the vicinity of an irradiation part of the electron beam tube 1 shown in FIG.

FIG. 6 is a bottom view illustrating a configuration of an electron beam processing apparatus according to a second embodiment of the present invention.

FIG. 7 is a front sectional view showing a configuration of an electron beam processing apparatus according to the related art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electron beam tube 2 Processing chamber 3 Lid 31 Opening 4 Window 41 Transmissive part 42 Non-transmissive part 5 Heating table 6 Workpiece 7 Cooling block 71 Cooling pipe 72 Cooling pipe 721 Small hole 8 Cooling fluid inflow pipe 9 Cooling fluid outflow pipe 10 Cooling block 101 Cooling pipe 102 Cooling pipe

Claims (2)

[Claims] An irradiation section of an electron beam tube is disposed in a processing chamber so as to be exposed. An object to be processed is mounted on a heating table provided in the processing chamber, and the electron beam is heated while heating the processing object. In the electron beam processing apparatus, the irradiation unit of the electron beam tube covers an opening of the electron beam tube and has an opening through which the electron beam passes, and an electron that covers the opening and transmits the electron beam. An electron beam processing apparatus, comprising: a window having a beam transmitting part; and a cooling block for cooling the irradiating part arranged in contact with the irradiating part except the electron beam transmitting part. 2. An electron beam processing apparatus according to claim 1, further comprising a cooling gas blowing means for blowing a cooling gas toward said window.