JP2022152246A - Wafer processing device - Google Patents

Abstract

To provide a wafer processing device which improves efficiency of processing.SOLUTION: The present invention uses a wafer processing device comprising: a sample table 103 which is disposed within a processing chamber of a vacuum container and in which a wafer 204 is mounted on a mount surface; a process gas supply path disposed above the sample table 103; an IR lamp 1020 which is disposed in a ring shape around the process gas supply path and heats the water 204 by irradiating the wafer 204 with electromagnetic waves; a dielectric susceptor ring 205 positioned on the sample table 103 while enclosing the mount surface; a ring-shaped space positioned between the susceptor ring 205 and a top face of the sample table 103 and encloses the mount surface and in which a gas is introduced; an introduction port which is disposed at an inner peripheral side of the space and communicated with the inside and through which the gas is introduced to an inner peripheral side of the susceptor ring 205; and a gap through which the gas introduced from the introduction port is introduced toward the mount surface or a rear face of an outer peripheral edge of the wafer 204 mounted on the mount surface, between the susceptor ring 205 and a surface of the sample table 103 around the mount surface.SELECTED DRAWING: Figure 2

Description

The present invention relates to wafer processing equipment.

Japanese Unexamined Patent Application Publication No. 2017-143186 (Patent Document 1) discloses performing an atomic layer level etching process on a layer on a semiconductor wafer. Specifically, first, a step of supplying active species (radicals) of a processing gas formed using plasma to the upper surface of a semiconductor wafer, which is a sample, and causing them to adhere to each other to form a product layer on the surface is performed. . After that, a step of desorbing and volatilizing the product layer by irradiating the wafer with an electromagnetic wave having a wavelength including infrared rays from lamps arranged in a ring around the upper region of the wafer is performed, and a degree equivalent to that of the atomic layer is performed. The etching process is performed by removing a product layer formed with a thickness of .

In such a technique, (1) a step of forming a layer of reaction products by radicals on a wafer placed on a sample stage (stage) arranged in a processing chamber inside a vacuum vessel; 2) A step of removing the reaction layer by heating with irradiation of electromagnetic waves containing infrared rays is carried out. As for the reaction layer generation step (1), first, a processing gas is supplied to the radical generation space in the upper portion of the processing chamber, and the gas is activated to form radicals. The formed radical particles are supplied to the upper surface of the wafer placed in the processing chamber through the gas introduction pipe communicating with the lower processing chamber, thereby forming a reaction layer. The reaction layer removal step (2) is performed after (1), in which infrared light is irradiated from a lamp placed above the wafer to vaporize the product on the wafer upper surface and remove the reaction layer. These steps are alternately repeated to remove the film to be processed on the wafer surface.

On the other hand, in the etching process, reaction products are generated in various processes, and some of them adhere or accumulate on the wall surface inside the processing chamber. If this deposit is separated again from the inner surface of the processing chamber and reattached to the wafer surface, pattern defects may occur and the performance of semiconductor devices manufactured from the wafer may be impaired. In particular, the products adhering to the side wall surface of the stage are likely to fly onto the wafer adhering to the vicinity of the wafer, which is likely to be a factor in lowering the processing yield.

Chemical or physical cleaning methods are used for these problems. As a typical means, one disclosed in Japanese Patent Application Laid-Open No. 2004-158563 (Patent Document 2) is known. In this prior art, gas is introduced from the outer periphery of the stage, and energy is given to this gas to form auxiliary plasma, thereby chemically reacting with the deposit on the side surface of the stage to remove it, or reaction is generated by the gas flow. It suppresses the diffusion of objects to the side of the stage.

JP 2017-143186 A JP 2004-158563 A

However, in the above prior art, problems have arisen due to insufficient consideration of the following points.

That is, since the surface of the stage is etched by plasma, the stage itself may become a source of foreign matter, or the surface material of the stage may be consumed, causing an electrical path with the internal electrode, which may lead to failure. In particular, when polyimide is used as the material of the dielectric film placed on the upper surface of the stage in order to electrostatically attract the wafer to the upper surface of the stage, deposits adhering to the surface inside the processing chamber are removed (cleaning). It easily reacts with halogen radicals, which are often used as a cleaning gas supplied for cleaning. Therefore, if such a cleaning gas is used, deterioration and wear of the film for electrostatic adsorption increase, shortening intervals between maintenance such as cleaning and replacement. is damaged. In addition, a configuration for forming an auxiliary plasma discharge section in the vicinity of the stage is required, which complicates the structure of the wafer processing apparatus and increases the cost.

SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer processing apparatus with improved processing efficiency.

A brief outline of representative embodiments among the embodiments disclosed in the present application is as follows.

A wafer processing apparatus according to one embodiment comprises a sample stage arranged in a processing chamber inside a vacuum vessel, a sample stage on which a semiconductor wafer to be processed is placed on an upper mounting surface, and a sample stage disposed above the sample stage. a processing gas supply passage through which a processing gas for processing the semiconductor wafer is supplied to the chamber; lamps for irradiating and heating the semiconductor wafer; a dielectric ring arranged on the sample stage surrounding the mounting surface; a ring-shaped space surrounding the mounting surface in a plan view and into which a first gas is introduced; is introduced into a portion on the inner peripheral side of the ring, and the first gas introduced from the introduction port is the mounting surface or the back surface of the outer peripheral edge of the semiconductor wafer placed on the mounting surface. and a gap between the ring introduced toward the mounting surface and the surface of the sample stage around the mounting surface.

According to the present invention, it is possible to provide a wafer processing apparatus with improved processing efficiency.

1 is a longitudinal sectional view schematically showing the outline of the configuration of a wafer processing apparatus according to an embodiment; FIG. FIG. 2 is a vertical cross-sectional view schematically showing the outline of the configuration of a stage gas supply mechanism used in the embodiment; 4 is a cross-sectional view schematically showing the configuration of a dispersion plate included in the stage gas supply mechanism used in the embodiment; FIG. 4 is a flow chart showing the operation flow of the wafer processing apparatus according to the embodiment; 8 is a flow chart showing the flow of operation of a wafer processing apparatus according to a modification of the embodiment;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and repeated description thereof will be omitted. Also, in the embodiments, descriptions of the same or similar parts are not repeated in principle unless particularly necessary.

(Embodiment)
An embodiment of the present invention will be described below with reference to FIGS. 1 to 4. FIG. FIG. 1 is a longitudinal sectional view schematically showing the configuration of a wafer processing apparatus according to an embodiment of the invention.

A wafer processing apparatus 100 according to this embodiment shown in FIG. a processing chamber 104 having a sample stage 103 on which a wafer (hereinafter referred to as a wafer) is placed. In other words, the sample table 103 is a stage on which a semiconductor wafer to be processed is placed on the upper mounting surface, and is arranged in the processing chamber 104 inside the vacuum vessel 101 . The wafer processing apparatus 100 also includes an IR lamp unit 105 that heats the wafer on the sample stage 103, and a dielectric material that connects the discharge unit 102 and the processing chamber 104 and has a through hole through which radical particles generated by the plasma pass. a channel with a distribution plate 106 made of

In the wafer processing apparatus 100 of the present embodiment, the processing chamber 104 and the discharge section 102 are cylindrical spaces, the central axes of which are arranged coaxially or at positions close to each other. there is The processing chamber 104 and the discharge section 102 are similarly partitioned by a circular dispersion plate 106 arranged at a position where the central axes of the processing chamber 104 and the discharge section 102 are aligned or can be regarded as similar. They are communicated through a plurality of through holes concentrically arranged in the plate 106 .

The discharge unit 102 is configured so that a processing gas 1013 flows into it to form a plasma 1011, and the state of the plasma can be observed by an optical method. Thus, the processing gas supply path including the discharge unit 102 and supplying the processing gas 1013 for processing the wafer into the processing chamber 104 is arranged above the sample table 103 .

A cylindrical quartz chamber (dielectric chamber) 107 kept in vacuum is installed in the discharge section 102 , and an ICP coil 108 is installed outside the quartz chamber 107 . The ICP coil 108 is connected to a high-frequency power supply via a matching box, and plasma 1011 is generated in the quartz chamber 107 by an ICP (Inductively Coupled Plasma) discharge method. A frequency band of several tens of MHz, such as 13.56 MHz, is used as the frequency of the high-frequency power.

A top plate 1014 is installed above the discharge section 102 . A gas distribution plate and a shower plate are installed under the top plate, and the processing gas is introduced into the vacuum vessel 101 via the gas distribution plate and the shower plate.

A sealing member such as an O-ring is interposed between the top plate 1014 and the top surface of the upper end portion of the side wall of the discharge section 102 . As a result, the inside of the discharge section 102 and the outside of the vacuum vessel 101 are hermetically sealed.

The flow rate of the processing gas 1013 is adjusted by a mass flow controller installed for each gas type. As the processing gas 1013, a combustible gas, a combustion-supporting gas, a mixed gas thereof, or a mixed gas thereof diluted with an inert gas is used.

An exhaust opening is provided in the lower part of the processing chamber 104 in order to decompress the inside of the vacuum container 101 , and the vacuum container 101 is connected to a vacuum pump 1017 through the opening through an exhaust pipe. A pressure regulating valve is arranged on the path between the opening and the vacuum pump 1017 to adjust the flow rate or speed of the exhaust by increasing or decreasing the cross-sectional area of the path or the opening.

The processing chamber 104 has a sample table 103 on which a wafer 204 is placed at a position that coincides with or can be regarded as close to the central axis of the discharge section 102 and the processing chamber 104 .

An IR lamp unit 105 for heating the wafer 204 is installed between the sample stage 103 and the discharge section 102 . The IR lamp unit 105 mainly consists of an IR lamp 1020, a reflector 1021 for reflecting IR light, and a light transmission window 1022.

A circle-shaped (circular) lamp is used as the IR lamp 1020 . That is, IR lamps 1020 for irradiating the wafer 204 with electromagnetic waves to heat the wafer 204 are arranged in a ring shape above the sample table 103 and around the processing gas supply path. The light emitted from the IR lamp 1020 emits light mainly in the visible to infrared region (herein referred to as IR light). The IR lamp 1020 is connected to a lamp power supply that provides power. In this embodiment, the near-infrared region of 500 nm to 3000 nm is used for wafer temperature control, and the far-infrared region of 3000 nm or later is used for IR absorption of the cleaning gas.

Although not shown, the power supplied to each arcuate portion of the IR lamps 1020 (three in the drawing) located at each radius arranged on concentric circles can be independently adjusted. , so that the radial distribution of the heating amount of the wafer can be adjusted.

The IR lamp unit 105 is provided with a light transmission window 1022 made of quartz for passing IR light from the lower surface to the inner peripheral wall surface.

A space inside the inner periphery of the IR lamp unit 105 is a flow path through which the plasma 1011 formed in the discharge section 102 arranged above flows. A dispersion plate (ion shield plate) 106 made of a dielectric that shields ions or electrons generated in the plasma and is permeable to neutral particles or radicals of the gas is installed in the channel. .

In the wafer processing apparatus 100 of this embodiment, the wafer 204 is subjected to the following processes. First, (1) a step of forming a reaction product layer by radicals on the surface of the wafer 204; and removing.

In the step (1) of generating the reaction product layer, first, a processing gas is supplied to the radical generation space above the processing chamber 104, and the gas is activated to form radicals. The formed radical particles are supplied to the upper surface of the wafer 204 placed in the processing chamber 104 through the gas introduction pipe communicating with the processing chamber 104 below, forming a reaction product layer. . In other words, a processing gas is introduced onto the wafer 204 placed on the mounting surface of the sample stage 103 to form a reaction product layer on the surface of the film layer to be processed that has been previously formed on the upper surface of the wafer 204 . The step (2) of removing the reaction product layer is performed after (1), in which infrared light (electromagnetic waves) is irradiated from the IR lamp unit 105 arranged above the wafer 204 to generate the upper surface of the wafer 204. Vaporization of the material removes the reaction product layer. By alternately repeating these steps, the film to be processed on the surface of the wafer 204 is removed.

FIG. 2 is a longitudinal sectional view schematically showing the outline of the configuration of the stage gas supply mechanism of the present embodiment shown in FIG. The sample table 103 shown in this figure has a cylindrical structure coaxial with the central axis of the processing chamber 104, and includes a sample table base material 201 inside, a sample adsorption film 202 on the upper surface, and a susceptor surrounding them from the side. It is composed of a ring 205 and has a function of fixing and attracting the wafer 204 and a cooling function.

A coolant channel for cooling the sample stage 103 is spirally arranged in the sample stage base material 201, and the cooling medium is circulated and supplied by a chiller.

As the sample adsorption film 202, a resin sheet made of polyimide or the like is attached so that the rear surface of the wafer is not damaged even if the heating/cooling cycle is performed while the wafer 204 is adsorbed. A plate-shaped electrode plate 203 is embedded in the sample adsorption film 202 in order to fix the wafer 204 by electrostatic adsorption, and the electrode plate 203 is connected to a DC power supply. A groove is provided in the sample adsorption film 202 and serves as a path for supplying He gas between the wafer 204 and the sample adsorption film 202 . As a result, the sample table 103 and the wafer 204 whose temperature is controlled by the coolant path can come into thermal contact with each other through the He gas, and the wafer 204 heated by the IR lamp unit 105 is efficiently cooled.

A susceptor ring 205 made of quartz is arranged around the periphery of the sample stage 103 to protect the sample stage 103 from corrosion caused by the etching gas. The susceptor ring 205 has a cylindrical shape having the same central axis as that of the sample stage, and its inner diameter is designed to match the diameters of the side walls of the sample stage substrate 201 and the sample adsorption film 202. covers the sample table 103 of The susceptor ring 205 is made of translucent material (for example, quartz). That is, the dielectric susceptor ring 205 is arranged on the sample stage 103 so as to surround the mounting surface of the sample stage 103 .

A stage gas introduction mechanism 206 is provided under the susceptor ring 205 for removing foreign matter deposited on the side surface of the sample table 103 and for suppressing foreign matter intrusion. A stage gas introduction mechanism 206 is a mechanism having a stage internal pipe 207 and a dispersion plate 208 . A non-volatile gas such as Ar (argon) or a molecular gas containing C—H, OH, NH, C=O, C=C or C—O bonds (IR absorber gas) is introduced. Ar gas is used for the purpose of suppressing intrusion of reaction products into the side surfaces of the stage during the process. Since the stretching and bending vibrations of the molecules of the IR-absorbing gas resonate with the wavelength of the IR light and efficiently absorb energy, they can be used to heat and remove foreign matter.

The IR light emitted from the IR lamp unit 105 has a wavelength in the wavelength band absorbed by the gas. For example, if the gas is carbon dioxide, the IR light is desirably in the far-infrared region. Specifically, the wavelength of the IR light is 10.1 to 14.9 μm or 3.2 to 3.7 μm when the bond possessed by the gas is C—H, and 2.7 to 3.0 μm when the bond of the gas is OH. 1 μm, and 2.9 μm for NH. In addition, the wavelength of IR light is 5.5 to 6.5 μm when the bond possessed by the gas is C=O, 6.1 to 6.3 μm when C=C, and 7.7 when C—O. It is desirable to be ~9.6 μm. An IR lamp for irradiating IR light with such a wavelength may be further provided in the IR lamp unit 105 . That is, the IR lamps 1020 shown in FIG. 1 are lamps for wafer temperature control that irradiate IR light in the near-infrared region (wavelength 0.4 to 3 μm). An IR lamp for irradiating IR light with a wavelength (4 μm or more) may be further provided.

A dispersion plate 208 is provided between the upper surface of the sample stage substrate 201 around the area immediately below the sample stage substrate 201 and the susceptor ring 205 covering the upper surface. The gas supplied from the stage internal pipe 207 is evenly diffused in the circumferential direction of the sample table 103 by the dispersion plate 208, passes through the vicinity of the stage side surface 209 which is shaded by the wafer 204 and does not reach the IR light, and passes through the vicinity of the wafer back surface 210. get out of At this time, the IR light absorbed in the process is emitted and heats the deposit. Quartz is used as the material of the dispersion plate 208 in order to improve infrared transmittance. In this way, in the stage gas introduction mechanism 206, the IR absorbing gas flow path ( route) is formed.

The deposit is, for example, a reaction product generated when the wafer 204 or the like reacts with the processing gas. Deposits tend to be generated as foreign matter to adhere to stage sides 209 which are shadowed by wafer 204 and out of reach of IR light.

FIG. 3 is a cross-sectional view schematically showing the structure of the gas distribution plate 208 provided in the stage gas introduction mechanism 206 of the present embodiment shown in FIG. This figure shows the structure of the 1/4 circumference (the range of an angle of 90 degrees around the center of the ring) of the ring-shaped dispersion plate 208 shown in FIG.

The gas supplied from the eight internal pipes 207 of the stage is diffused in the circumferential direction of the sample stage 103 in the gas reservoir 302, and passes through the slits (introduction ports) 303 equally installed at 16 locations at intervals of 22.5°. It is diffused again in the subsequent gas reservoir 304 . This structure diffuses the gas in the circumferential direction and extends the distance irradiated with the IR light, so the gas can efficiently absorb the IR light. By fixing the dispersion plate 208 to the sample table 103 with four bolts, the gap between the side surface of the sample table 103 and the dispersion plate is controlled.

The gas reservoir 302 is positioned between the susceptor ring 205 and the upper surface of the sample table 103, surrounds the mounting surface of the sample table 103 in a plan view, and introduces the gas to the center side (inside) of the susceptor ring 205. It is a ring-shaped space. The slit 303 is an introduction port that is arranged on the inner peripheral side of the space, communicates with the center side (inside) of the susceptor ring 205 , and introduces the gas into the inner peripheral side of the susceptor ring 205 . The gas introduced from the introduction port is introduced toward the mounting surface or the rear surface of the outer peripheral edge of the wafer 204 placed on the mounting surface, and the susceptor ring 205 and the sample stage around the mounting surface. It is supplied to the gap between the surface (stage side surface 209). A susceptor ring 205 on the top of the sample table 103 has openings, that is, eight internal stage pipes 207 that communicate with the ring-shaped space to supply gas into the ring-shaped space. The ring-shaped space includes a recessed portion surrounding the central portion of the susceptor ring 205 on the lower surface of the susceptor ring 205 and a sample covered with the susceptor ring 205 while the susceptor ring 205 is placed on the sample table 103 . It is a space surrounded by the surface of the platform 103 (see FIG. 2).

FIG. 4 is a flow chart showing the operation flow of the wafer processing apparatus according to the present embodiment shown in FIG. In particular, FIG. 4 shows the operational flow of the stage gas introduction mechanism 206 during the process of etching the wafer 204 .

As shown in FIG. 4, in the wafer processing apparatus 100 of the present embodiment, the processing process is started (step 401) to start the processing of the wafer 204, and the non-volatile gas is introduced by the stage gas introduction mechanism 206 (step 402). ). During the processing of the wafer 204 , step 402 is continued and the nonvolatile gas is constantly supplied, thereby suppressing the intrusion of reaction products into the side surfaces of the sample stage 103 .

Once the processing of wafer 204 is complete (step 403), the steps of the cleaning process shown in steps 404-408 are performed. That is, when the cleaning process is started (step 404), the gas introduced from the stage gas introduction mechanism 206 is switched from the non-volatile gas to the IR absorbing gas (step 405). After that, power is supplied to the IR lamp 1020 to light it, and electromagnetic waves including infrared rays (IR) are applied to the wafer 204 and its outer peripheral portion in the processing chamber 104 (step 406). In this step, the introduced IR-absorbing gas absorbs the irradiated infrared radiation.

A gas that has absorbed IR light emits IR light with a certain time constant (step 407). Since the amount of this emission decays exponentially with time, the amount of IR-absorbing gas supplied is controlled by a mass flow controller placed on the supply path of this gas so that a sufficient amount of heat is emitted on the side of the stage. controlled and optimized. In this embodiment, the upper limit of the temperature for heating the IR absorbing gas is the heat resistance temperature of 150° C. of the adhesive for the polyimide film. The output from a temperature sensor, such as a thermocouple located inside the sample stage 103, is used to monitor the temperature of the sample stage 103 during the heating process so that the irradiation mass flow controller of the IR lamp 1020 can control the temperature before the temperature exceeds the upper limit. is detected by a controller (not shown) and fed back to the controller to adjust the operation of the mass flow controller.

Foreign matter (deposits adhering to the stage side surface 209 of the sample stage 103) is heated by the IR light emitted from the gas in step 407, and thermally decomposed and removed (step 408).

After the removal of the foreign object is detected (step 408), the IR lamp 1020 is de-energized and extinguished. After that, the gas supplied to the stage gas introduction mechanism 206 is switched to a non-volatile gas (step 409), and the cleaning process ends. Further, depending on the result of determining whether the etching process for wafer 204 has reached its endpoint, the next processing step for wafer 204 is started or the process for wafer 204 is terminated. Additionally, the presence or absence of a next wafer 204 to be processed is detected, and if there is a wafer 204, the next processing step begins the process (step 410).

<Modification>
In the wafer processing apparatus 100 of the present embodiment, the dispersion composed of Ti (titanium) or its alloy has a relatively high IR absorptance of 0.5 and a small linear expansion of 8.2×10 ⁻⁶ /K. A plate (gas distribution plate) 208 may be used. In this configuration, heat exchange between the dispersion plate 208 and the gas introduced from the stage gas introduction mechanism 206 removes foreign matter on the stage side surface 209 . The reason why a material with a small linear expansion is selected as the material for the dispersion plate 208 is to suppress the stress applied around the fixing bolts of the dispersion plate 208 when thermally expanded by heating.

In this modified example, hydrogen (thermal conductivity: 0.2 W/mK) or helium (thermal conductivity: 0.15 W/mK) (hereinafter referred to as thermal conduction gas) having high thermal conductivity is used. In the above-described embodiment, electromagnetic waves with wavelengths in the far-infrared region are used as the gas supplied from the stage gas introduction mechanism 206 for removing foreign matter. On the other hand, in this modified example, a wavelength in the near-infrared region is used, and an IR lamp 1020 having a peak in the near-infrared region is used.

FIG. 5 is a flow chart showing the operation flow of the wafer processing apparatus according to the modification of the present embodiment.

In FIG. 5, in the wafer processing apparatus 100 of the present embodiment, the processing process is started (step 501) and the processing of the wafer 204 is started, similarly to FIG. (step 502). During the processing of the wafer 204 , step 502 is continued and the nonvolatile gas is constantly supplied, thereby suppressing the intrusion of the reaction product into the stage side surface 209 .

Once the processing of wafer 204 is complete (step 503), the steps of the cleaning process shown in steps 504-508 are performed. That is, when the cleaning process is started (step 504), power is supplied to the IR lamp 1020 to light it, and electromagnetic waves including infrared rays (IR) are irradiated to the wafer 204 in the processing chamber 104 and its peripheral portion. At the same time, the dispersion plate 208 is irradiated with electromagnetic waves and heated (step 505).

Further, the non-volatile gas is switched to the heat conductive gas and the gas is introduced from the stage gas introduction mechanism 206 (step 506). In this process, thermal energy is transferred from the heated distribution plate 208 to the heat transfer gas, and this heat energy is transferred to the stage side surfaces 209 by the heat transfer gas (step 507). As a result, the foreign matter on the side surface 209 of the stage is heated and removed. Also in this modified example, the temperature for heating the stage side surface 209 is adjusted by the controller using the output from a temperature sensor such as a thermocouple arranged inside the sample stage 103 .

After it is detected that the foreign matter has been removed (step 508), the IR lamp 1020 is turned off, the gas supplied to the stage gas introduction mechanism 206 is switched to a non-volatile gas (step 509), and the cleaning process ends. . Further, depending on the result of the determination as to whether the etching process of wafer 204 has reached the end point, the next processing step of wafer 204 is started or the process of wafer 204 is completed. Additionally, the presence or absence of the next wafer 204 to be processed is detected, and if there is a wafer 204, the next processing step begins the process (step 510).

The invention made by the present inventors has been specifically described above based on the embodiment, but the invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. be.

100 Wafer processing apparatus 101 Vacuum chamber 102 Discharge unit 103 Sample stage 104 Processing chamber 105 IR lamp unit 106 Dispersion plate 107 Quartz chamber 108 ICP coil 201 Sample stage substrate 202 Sample adsorption film 203 Electrode plate 204 Wafer 205 Susceptor ring 206 Stage gas introduction Mechanism 207 Stage Internal Piping 208 Dispersion Plate 1011 Plasma 1013 Processing Gas 1014 Top Plate 1017 Vacuum Pump 1020 IR Lamp 1021 Reflector 1022 Light Transmission Window

Claims (4)

a sample table arranged in the processing chamber inside the vacuum vessel, and having a semiconductor wafer to be processed mounted on the upper mounting surface;
a processing gas supply path disposed above the sample stage and supplying a processing gas for processing the semiconductor wafer into the processing chamber;
lamps arranged in a ring shape above the sample table and around the processing gas supply path, for irradiating the semiconductor wafer with electromagnetic waves to heat the semiconductor wafer;
a dielectric ring arranged on the sample stage surrounding the mounting surface;
a ring-shaped space located between the ring and the upper surface of the sample stage, surrounding the mounting surface in plan view, and into which a first gas is introduced;
an introduction port disposed at a location on the inner peripheral side of the ring-shaped space, communicating with the inside, and through which the first gas is introduced to a location on the inner peripheral side of the ring;
The first gas introduced from the introduction port is introduced toward the mounting surface or the back surface of the outer peripheral edge of the semiconductor wafer placed on the mounting surface, and the ring around the mounting surface. a gap between the surface of the sample stage;
A wafer processing apparatus comprising: The wafer processing apparatus according to claim 1,
The wafer processing apparatus, wherein the ring above the sample table has an opening that communicates with the ring-shaped space to supply the first gas into the ring-shaped space. 3. The wafer processing apparatus according to claim 1, wherein
The ring-shaped space is composed of a concave portion arranged on the lower surface of the ring so as to surround the central portion of the ring, and the sample stage covered by the ring while the ring is placed on the top of the sample stage. A wafer processing apparatus that is a space enclosed by a surface. In the wafer processing apparatus according to any one of claims 1 to 3,
After the step of introducing the processing gas onto the semiconductor wafer placed on the mounting surface to form a product layer on the surface of the film layer to be processed which has been formed in advance on the upper surface of the semiconductor wafer, A wafer processing apparatus for removing the product layer by irradiating the semiconductor wafer with an electromagnetic wave from the lamp.

Images