JP2001318624A - 表示装置およびその作製方法 - Google Patents

表示装置およびその作製方法

Info

Publication number
JP2001318624A
JP2001318624A JP2001056031A JP2001056031A JP2001318624A JP 2001318624 A JP2001318624 A JP 2001318624A JP 2001056031 A JP2001056031 A JP 2001056031A JP 2001056031 A JP2001056031 A JP 2001056031A JP 2001318624 A JP2001318624 A JP 2001318624A
Authority
JP
Japan
Prior art keywords
wiring
gate
display device
line
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001056031A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001318624A5 (https=
Inventor
Jun Koyama
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001056031A priority Critical patent/JP2001318624A/ja
Publication of JP2001318624A publication Critical patent/JP2001318624A/ja
Publication of JP2001318624A5 publication Critical patent/JP2001318624A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2001056031A 2000-02-29 2001-02-28 表示装置およびその作製方法 Withdrawn JP2001318624A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001056031A JP2001318624A (ja) 2000-02-29 2001-02-28 表示装置およびその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000055017 2000-02-29
JP2000-55017 2000-02-29
JP2000055013 2000-02-29
JP2000-55013 2000-02-29
JP2001056031A JP2001318624A (ja) 2000-02-29 2001-02-28 表示装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011152513A Division JP5520891B2 (ja) 2000-02-29 2011-07-11 発光装置

Publications (2)

Publication Number Publication Date
JP2001318624A true JP2001318624A (ja) 2001-11-16
JP2001318624A5 JP2001318624A5 (https=) 2008-11-27

Family

ID=27342542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001056031A Withdrawn JP2001318624A (ja) 2000-02-29 2001-02-28 表示装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2001318624A (https=)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2004212992A (ja) * 2002-12-26 2004-07-29 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
JP2004213002A (ja) * 2002-12-31 2004-07-29 Lg Phillips Lcd Co Ltd 有機電界発光素子とその製造方法
JP2004212994A (ja) * 2002-12-26 2004-07-29 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
JP2004213004A (ja) * 2002-12-28 2004-07-29 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
JP2004212996A (ja) * 2002-12-26 2004-07-29 Lg Phillips Lcd Co Ltd 有機電界発光素子及びその製造方法
JP2005197238A (ja) * 2003-12-30 2005-07-21 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
JP2007013127A (ja) * 2005-06-01 2007-01-18 Semiconductor Energy Lab Co Ltd 集積回路装置、集積回路装置の作製方法
JP2007011261A (ja) * 2005-06-30 2007-01-18 Lg Philips Lcd Co Ltd 薄膜トランジスタ液晶表示パネル及びその製造方法
JP2008310015A (ja) * 2007-06-14 2008-12-25 Eastman Kodak Co アクティブマトリクス型表示装置
JP2009036948A (ja) * 2007-08-01 2009-02-19 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法、および有機エレクトロルミネッセンス装置
US7582903B2 (en) 2002-11-14 2009-09-01 Samsung Electronics Co., Ltd. Thin film transistor array panel
JP2012003268A (ja) * 2000-02-29 2012-01-05 Semiconductor Energy Lab Co Ltd 発光装置及び電気器具
US8362485B2 (en) 2005-06-01 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
JP2013122598A (ja) * 2001-11-30 2013-06-20 Semiconductor Energy Lab Co Ltd 発光装置
WO2013141190A1 (ja) * 2012-03-23 2013-09-26 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子用封止要素、有機エレクトロルミネッセンス素子の製造方法
US9766763B2 (en) 2014-12-26 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Functional panel, light-emitting panel, display panel, and sensor panel
JP2021152656A (ja) * 2001-12-28 2021-09-30 株式会社半導体エネルギー研究所 自動車、及び、表示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01101519A (ja) * 1987-10-14 1989-04-19 Seiko Epson Corp アクティブマトリクス基板の製造方法
JPH09223804A (ja) * 1995-12-14 1997-08-26 Semiconductor Energy Lab Co Ltd 半導体装置
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01101519A (ja) * 1987-10-14 1989-04-19 Seiko Epson Corp アクティブマトリクス基板の製造方法
JPH09223804A (ja) * 1995-12-14 1997-08-26 Semiconductor Energy Lab Co Ltd 半導体装置
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012003268A (ja) * 2000-02-29 2012-01-05 Semiconductor Energy Lab Co Ltd 発光装置及び電気器具
US9263476B2 (en) * 2000-02-29 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Display device and method for fabricating the same
US20140319531A1 (en) * 2000-02-29 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Display Device and Method for Fabricating the Same
JP2014146806A (ja) * 2000-02-29 2014-08-14 Semiconductor Energy Lab Co Ltd 発光装置
US10629637B2 (en) 2001-11-30 2020-04-21 Semiconductor Energy Laboratory Co., Ltd. Vehicle, display device and manufacturing method for a semiconductor device
JP2013122598A (ja) * 2001-11-30 2013-06-20 Semiconductor Energy Lab Co Ltd 発光装置
US10325940B2 (en) 2001-11-30 2019-06-18 Semiconductor Energy Laboratory Co., Ltd. Vehicle, display device and manufacturing method for a semiconductor device
US9493119B2 (en) 2001-11-30 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Vehicle, display device and manufacturing method for a semiconductor device
US10957723B2 (en) 2001-11-30 2021-03-23 Semiconductor Energy Laboratory Co., Ltd. Vehicle, display device and manufacturing method for a semiconductor device
JP2021152656A (ja) * 2001-12-28 2021-09-30 株式会社半導体エネルギー研究所 自動車、及び、表示装置
US7453101B2 (en) 2002-05-15 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with organic compound layer
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US7582903B2 (en) 2002-11-14 2009-09-01 Samsung Electronics Co., Ltd. Thin film transistor array panel
US8071978B2 (en) 2002-12-26 2011-12-06 Lg Display Co., Ltd. Organic electroluminescent device comprising power supply line on same layer as gate line
JP2004212996A (ja) * 2002-12-26 2004-07-29 Lg Phillips Lcd Co Ltd 有機電界発光素子及びその製造方法
JP2007329138A (ja) * 2002-12-26 2007-12-20 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
JP2004212992A (ja) * 2002-12-26 2004-07-29 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
US7259395B2 (en) 2002-12-26 2007-08-21 Lg.Philips Lcd Co., Ltd. Dual panel type organic electroluminescent display device and manufacturing method for the same
US7232702B2 (en) 2002-12-26 2007-06-19 Lg.Philips Lcd Co., Ltd. Dual panel type organic electroluminescent device and method of fabricating the same
JP2004212994A (ja) * 2002-12-26 2004-07-29 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
JP2004213004A (ja) * 2002-12-28 2004-07-29 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
US7311577B2 (en) 2002-12-31 2007-12-25 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device with pixel regions and dummy pixel regions and method or fabricating the same
JP2004213002A (ja) * 2002-12-31 2004-07-29 Lg Phillips Lcd Co Ltd 有機電界発光素子とその製造方法
US7304427B2 (en) 2002-12-31 2007-12-04 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device with pixel regions and dummy pixel regions and method of fabricating the same
JP2005197238A (ja) * 2003-12-30 2005-07-21 Lg Phillips Lcd Co Ltd デュアルパネルタイプ有機電界発光素子及びその製造方法
US8362485B2 (en) 2005-06-01 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
JP2007013127A (ja) * 2005-06-01 2007-01-18 Semiconductor Energy Lab Co Ltd 集積回路装置、集積回路装置の作製方法
JP2007011261A (ja) * 2005-06-30 2007-01-18 Lg Philips Lcd Co Ltd 薄膜トランジスタ液晶表示パネル及びその製造方法
US8310612B2 (en) 2005-06-30 2012-11-13 Lg Display Co., Ltd. Thin film transistor liquid crystal display panel having gate line and data line formed on same layer and method of fabricating the same
JP2008310015A (ja) * 2007-06-14 2008-12-25 Eastman Kodak Co アクティブマトリクス型表示装置
JP2009036948A (ja) * 2007-08-01 2009-02-19 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法、および有機エレクトロルミネッセンス装置
WO2013141190A1 (ja) * 2012-03-23 2013-09-26 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子用封止要素、有機エレクトロルミネッセンス素子の製造方法
US9766763B2 (en) 2014-12-26 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Functional panel, light-emitting panel, display panel, and sensor panel
US10228807B2 (en) 2014-12-26 2019-03-12 Semiconductor Energy Laboratory Co., Ltd. Functional panel, light-emitting panel, display panel, and sensor panel

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