JP2001308303A - 活性領域ダイオード及びソース／ドレイン拡散領域のリーク電流を低減するための方法及び構造 - Google Patents

活性領域ダイオード及びソース／ドレイン拡散領域のリーク電流を低減するための方法及び構造

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Publication number
JP2001308303A
JP2001308303A JP2001056673A JP2001056673A JP2001308303A JP 2001308303 A JP2001308303 A JP 2001308303A JP 2001056673 A JP2001056673 A JP 2001056673A JP 2001056673 A JP2001056673 A JP 2001056673A JP 2001308303 A JP2001308303 A JP 2001308303A
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Japan
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region
guard layer
source
layer
gate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2001056673A
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English (en)
Japanese (ja)
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JP2001308303A5 (enExample
Inventor
Thomas Edward Kopley
トーマス・エドワード・コプレイ
Dietrich W Vook
デートリッヒ・ダブリュー・ウック
Thomas Dungan
トーマス・ダンガン
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Agilent Technologies Inc
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Agilent Technologies Inc
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Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2001308303A publication Critical patent/JP2001308303A/ja
Publication of JP2001308303A5 publication Critical patent/JP2001308303A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001056673A 2000-03-03 2001-03-01 活性領域ダイオード及びソース／ドレイン拡散領域のリーク電流を低減するための方法及び構造 Pending JP2001308303A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/517635 2000-03-03
US09/517,635 US6350663B1 (en) 2000-03-03 2000-03-03 Method for reducing leakage currents of active area diodes and source/drain diffusions

Publications (2)

Publication Number Publication Date
JP2001308303A true JP2001308303A (ja) 2001-11-02
JP2001308303A5 JP2001308303A5 (enExample) 2008-04-10

Family

ID=24060592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001056673A Pending JP2001308303A (ja) 2000-03-03 2001-03-01 活性領域ダイオード及びソース／ドレイン拡散領域のリーク電流を低減するための方法及び構造

Country Status (4)

Country Link
US (3) US6350663B1 (enExample)
EP (1) EP1130638B1 (enExample)
JP (1) JP2001308303A (enExample)
DE (1) DE60127887D1 (enExample)

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JP2002134728A (ja) * 2000-10-25 2002-05-10 Victor Co Of Japan Ltd Ｃｍｏｓイメージセンサ
JP2005223146A (ja) * 2004-02-05 2005-08-18 Asahi Kasei Microsystems Kk 固体撮像素子およびその製造方法
JP2006506813A (ja) * 2002-11-12 2006-02-23 マイクロン テクノロジー インコーポレイテッド Ｃｍｏｓイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術
JP2010283241A (ja) * 2009-06-05 2010-12-16 Nikon Corp 固体撮像素子
JP2016062927A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体素子

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US6847070B2 (en) * 2000-08-09 2005-01-25 Dalsa, Inc. Five transistor CMOS pixel
US20030160883A1 (en) * 2000-09-12 2003-08-28 Viktor Ariel Single chip cmos image sensor system with video compression
GB2375133B (en) * 2001-04-17 2004-09-15 David Vincent Byrne A trench cover
US7211779B2 (en) * 2001-08-14 2007-05-01 Transchip, Inc. Pixel sensor with charge evacuation element and systems and methods for using such
US7791641B2 (en) * 2001-09-12 2010-09-07 Samsung Electronics Co., Ltd. Systems and methods for utilizing activity detection information in relation to image processing
US6730969B1 (en) 2002-06-27 2004-05-04 National Semiconductor Corporation Radiation hardened MOS transistor
JP2005537654A (ja) * 2002-08-30 2005-12-08 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ イメージセンサ、イメージセンサを備えたカメラシステム、及び、そのような装置の製造方法
US7993108B2 (en) 2002-10-09 2011-08-09 Abbott Diabetes Care Inc. Variable volume, shape memory actuated insulin dispensing pump
US7399401B2 (en) 2002-10-09 2008-07-15 Abbott Diabetes Care, Inc. Methods for use in assessing a flow condition of a fluid
US7727181B2 (en) 2002-10-09 2010-06-01 Abbott Diabetes Care Inc. Fluid delivery device with autocalibration
EP2290238A1 (en) 2002-10-09 2011-03-02 Abbott Diabetes Care Inc. Plunger pump actuated by a shape memory element
JP3720014B2 (ja) * 2002-11-01 2005-11-24 日本テキサス・インスツルメンツ株式会社 固体撮像装置
JP4391079B2 (ja) 2002-11-28 2009-12-24 浜松ホトニクス株式会社 固体撮像装置及び放射線撮像装置
US7180111B1 (en) 2003-01-08 2007-02-20 Cypress Semiconductor Corporation Gate n-well/p-substrate photodiode
US7173299B1 (en) 2003-01-08 2007-02-06 Cypress Semiconductor Corporation Photodiode having extended well region
US20040211987A1 (en) * 2003-04-24 2004-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor (FET) reset device structure for photodiode image sensor
US7679407B2 (en) 2003-04-28 2010-03-16 Abbott Diabetes Care Inc. Method and apparatus for providing peak detection circuitry for data communication systems
US8071028B2 (en) 2003-06-12 2011-12-06 Abbott Diabetes Care Inc. Method and apparatus for providing power management in data communication systems
US7102184B2 (en) * 2003-06-16 2006-09-05 Micron Technology, Inc. Image device and photodiode structure
US7768500B2 (en) * 2003-06-16 2010-08-03 Humanscale Corporation Ergonomic pointing device
US20050007473A1 (en) * 2003-07-08 2005-01-13 Theil Jeremy A. Reducing image sensor lag
US20070135697A1 (en) * 2004-04-19 2007-06-14 Therasense, Inc. Method and apparatus for providing sensor guard for data monitoring and detection systems
JP4403387B2 (ja) * 2004-04-26 2010-01-27 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
US7557799B2 (en) 2004-06-17 2009-07-07 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. System for determining pointer position, movement, and angle
KR100672704B1 (ko) * 2004-12-30 2007-01-22 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조방법
CN101180093B (zh) 2005-03-21 2012-07-18 雅培糖尿病护理公司 用于提供结合的药剂输液以及分析物监测系统的方法和系统
US7768408B2 (en) 2005-05-17 2010-08-03 Abbott Diabetes Care Inc. Method and system for providing data management in data monitoring system
US7620437B2 (en) 2005-06-03 2009-11-17 Abbott Diabetes Care Inc. Method and apparatus for providing rechargeable power in data monitoring and management systems
US7756561B2 (en) 2005-09-30 2010-07-13 Abbott Diabetes Care Inc. Method and apparatus for providing rechargeable power in data monitoring and management systems
US7583190B2 (en) 2005-10-31 2009-09-01 Abbott Diabetes Care Inc. Method and apparatus for providing data communication in data monitoring and management systems
KR100778854B1 (ko) * 2005-12-29 2007-11-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US8344966B2 (en) 2006-01-31 2013-01-01 Abbott Diabetes Care Inc. Method and system for providing a fault tolerant display unit in an electronic device
US20070263127A1 (en) * 2006-03-07 2007-11-15 Transchip, Inc. Low Noise Gamma Function In Digital Image Capture Systems And Methods
US7868928B2 (en) 2006-03-15 2011-01-11 Samsung Electronics Co., Ltd. Low noise color correction matrix function in digital image capture systems and methods
US8579853B2 (en) 2006-10-31 2013-11-12 Abbott Diabetes Care Inc. Infusion devices and methods
TWI346393B (en) * 2007-07-05 2011-08-01 Univ Nat Taiwan A method for forming a p-n junction photodiode and an apparatus for the same
US7974805B2 (en) * 2008-10-14 2011-07-05 ON Semiconductor Trading, Ltd Image sensor and method
US8560082B2 (en) 2009-01-30 2013-10-15 Abbott Diabetes Care Inc. Computerized determination of insulin pump therapy parameters using real time and retrospective data processing
WO2010129375A1 (en) 2009-04-28 2010-11-11 Abbott Diabetes Care Inc. Closed loop blood glucose control algorithm analysis
EP4276652A3 (en) 2009-07-23 2024-01-31 Abbott Diabetes Care, Inc. Real time management of data relating to physiological control of glucose levels
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
US9082905B2 (en) * 2012-02-15 2015-07-14 Texas Instruments Incorporated Photodiode employing surface grating to enhance sensitivity
JP5985269B2 (ja) 2012-06-26 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置
US9773784B2 (en) * 2012-08-24 2017-09-26 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
CN102945888A (zh) * 2012-11-28 2013-02-27 上海华力微电子有限公司 用于图像传感器的光电二极管及其制造方法、图像传感器
DE102020111562A1 (de) 2020-04-28 2021-10-28 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
WO2022128663A1 (en) * 2020-12-18 2022-06-23 Ams International Ag Photo sensor cell, photo sensor and method
DE102021128022B3 (de) 2021-10-27 2023-02-02 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor

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JPS57120385A (en) * 1981-01-19 1982-07-27 Nec Corp Image pick up solid element
JPS57202182A (en) * 1981-06-08 1982-12-10 Hitachi Ltd Solid-state image pickup element
JPH02161776A (ja) * 1988-12-15 1990-06-21 Toshiba Corp 差動増幅回路

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JPH0637306A (ja) * 1992-07-20 1994-02-10 Kawasaki Steel Corp 半導体装置
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US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
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US5789774A (en) * 1996-03-01 1998-08-04 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
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US5831322A (en) * 1997-06-25 1998-11-03 Advanced Photonix, Inc. Active large area avalanche photodiode array
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JPS57120385A (en) * 1981-01-19 1982-07-27 Nec Corp Image pick up solid element
JPS57202182A (en) * 1981-06-08 1982-12-10 Hitachi Ltd Solid-state image pickup element
JPH02161776A (ja) * 1988-12-15 1990-06-21 Toshiba Corp 差動増幅回路

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134728A (ja) * 2000-10-25 2002-05-10 Victor Co Of Japan Ltd Ｃｍｏｓイメージセンサ
JP2006506813A (ja) * 2002-11-12 2006-02-23 マイクロン テクノロジー インコーポレイテッド Ｃｍｏｓイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術
JP2005223146A (ja) * 2004-02-05 2005-08-18 Asahi Kasei Microsystems Kk 固体撮像素子およびその製造方法
JP2010283241A (ja) * 2009-06-05 2010-12-16 Nikon Corp 固体撮像素子
JP2016062927A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体素子

Also Published As

Publication number Publication date
EP1130638B1 (en) 2007-04-18
EP1130638A3 (en) 2003-10-15
US6437379B2 (en) 2002-08-20
US6417074B2 (en) 2002-07-09
EP1130638A2 (en) 2001-09-05
US20010024864A1 (en) 2001-09-27
DE60127887D1 (de) 2007-05-31
US20010023095A1 (en) 2001-09-20
US6350663B1 (en) 2002-02-26

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