JP2001308048A - Method of cleaning and carrying ground wafer - Google Patents

Method of cleaning and carrying ground wafer

Info

Publication number
JP2001308048A
JP2001308048A JP2000117307A JP2000117307A JP2001308048A JP 2001308048 A JP2001308048 A JP 2001308048A JP 2000117307 A JP2000117307 A JP 2000117307A JP 2000117307 A JP2000117307 A JP 2000117307A JP 2001308048 A JP2001308048 A JP 2001308048A
Authority
JP
Japan
Prior art keywords
wafer
chuck
cleaning
scrub
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000117307A
Other languages
Japanese (ja)
Other versions
JP4672829B2 (en
Inventor
Seiki Kizaki
清貴 木崎
Hirotaka Okonogi
弘孝 小此木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okamoto Machine Tool Works Ltd
Original Assignee
Okamoto Machine Tool Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okamoto Machine Tool Works Ltd filed Critical Okamoto Machine Tool Works Ltd
Priority to JP2000117307A priority Critical patent/JP4672829B2/en
Publication of JP2001308048A publication Critical patent/JP2001308048A/en
Application granted granted Critical
Publication of JP4672829B2 publication Critical patent/JP4672829B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent polishing chips or abrasive grains from sticking to the surface of a chuck which vacuum-chucks a wafer. SOLUTION: A polished wafer is carried to the next process via the following processes. (1) A scrub washer 209a is shifted to a position above a wafer to be polished, vacuum-chucked by a chuck 107, and a wafer-polishing face is cleaned by brush scrubbing by rotating a brush, while supplying cleaning water onto a wafer face by nozzle 211, and polishing chips and abrasive grains are washed away. (2) The supply of cleaning liquid is stopped, and the scrub washer 209a is lifted, and then the rinse water of a quantity (0.5-3 liters/min. with a wafer, for example, 200 mm or 30 mm in diameter) that a water layer is made on the surface of the water is supplied by rinse water supply pipe 209c. (3) The wafer is carried to the next process (for example, accommodation in a storage cassette, etching, and polishing) by suction pad, after chucking the wafer by rotating the suction pad 112a of a carriage mechanism 112 onto the topside of the wafer cleaned and rinsed, while continuing the supply of the rinsing water.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、研削されたウエハ
表面に研削屑や砥粒が固化しない状態で研削され、洗浄
されたウエハを次工程、例えば、収納カセットにウエハ
を収納する工程、あるいはエッチング工程もしくは研磨
工程へ搬送する方法に関する。
BACKGROUND OF THE INVENTION The present invention relates to a next step of cleaning a wafer which has been ground and cleaned without grinding debris or abrasive grains on the surface of the ground wafer, for example, a step of storing a wafer in a storage cassette, or The present invention relates to a method of transporting the wafer to an etching step or a polishing step.

【0002】[0002]

【従来の技術】デバイスウエハの裏面研削装置として
は、ウエハの研削時間を短縮するために複数のスピンド
ル軸に軸承された複数の砥石を用い、粗研削、仕上研削
を割り振って研削装置内のウエハのスル−プット時間を
短縮させている。例えば特開平11−307489号公
報はインデックステ−ブルを用いた研削装置を開示す
る。
2. Description of the Related Art In order to reduce the grinding time of a wafer, a plurality of grinding wheels mounted on a plurality of spindles are used as a back grinding device for a device wafer. The throughput time is shortened. For example, Japanese Patent Laying-Open No. 11-307489 discloses a grinding apparatus using an index table.

【0003】図4および図5に示すエッチング機構20
を付属させた研削装置1において、101は研削装置で
あり、(A)左側にウエハロ−ディング用カセット11
7を、右側にウエハアンロ−ディング用カセット117
を対として前列に配置し、(B)基台の上にウエハロ−
ディング用カセットの後部にウエハ仮置台106を、ウ
エハアンロ−ディング用カセットの後部にウエハ洗浄機
構113を対として次列に配置し、(C)仮置台と洗浄
機構の後部の基台の中央部を刳り抜いた箇所にインデッ
クスタ−ンテ−ブルを設け、かつこのインデックスタ−
ンテ−ブル108に該テ−ブルの軸心を中心に3個のウ
エハチャック機構107,107,107を等間隔に公
転自在に設けるとともにウエハロ−ディング/ウエハア
ンロ−ディングゾ−ンs1および粗研削ゾ−ンs2、仕
上研削ゾ−ンs3にテ−ブルを区域分けし、(D)イン
デックスタ−ンテ−ブルの後列には基台より起立させた
枠体111に各研削ゾ−ンに適した砥石111b,11
1dをスピンドル軸111a,111cに軸承させた研
削機構を各研削ゾ−ンに位置するウエハチャック機構に
対応して設け、(E)前記1対のカセットの前列と前記
仮置台とウエハ洗浄機構の次列の間の基台の略中央に昇
降機構103、回転駆動機構、ウエハアライメント測定
機構と各ア−ム115a,115b,115c駆動の制
御機構を備えた多関節型ロボット115を立設し、前記
仮置台上のウエハをインデックスタ−ンテ−ブルのウエ
ハロ−ディング/ウエハアンロ−ディングゾ−ンs1の
チャック機構に移送可能で、かつ、洗浄機構上のウエハ
をウエハアンロ−ディング用カセットに搬送可能とした
多関節型ロボット115、(F)インデックスタ−ンス
テ−ブルを設けた基台の略中央部の左右に設けた1対の
軸を軸心として回動自在に備えられたウエハ吸着パッド
112aを有する仮置台からウエハをウエハロ−ディン
グ/ウエハアンロ−ディングゾ−ンのチャック機構に搬
送する搬送パッド112と、ウエハロ−ディング/ウエ
ハアンロ−ディングゾ−ンのチャック機構上のウエハを
洗浄機構に搬送する搬送パッド112、(G)基台より
立設した枠体110に設けたネジ棒上を左右方向に移動
可能なチャック機構の洗浄機構109bとチャック機構
のドレッサ−109aの対を備える。
The etching mechanism 20 shown in FIGS. 4 and 5
In the grinding apparatus 1 to which a wafer loading cassette 101 is attached, (A) a wafer loading cassette 11 is provided on the left side.
7 on the right side, and a wafer unloading cassette 117
Are arranged in the front row as a pair, and (B) the wafer row is placed on the base.
A temporary wafer mounting table 106 is arranged at the rear of the loading cassette, and a wafer cleaning mechanism 113 is arranged at the rear of the wafer unloading cassette in the next row. An index turntable is provided in the hollowed out area, and this index turntable
The table 108 is provided with three wafer chuck mechanisms 107, 107, 107 which are revolvable at equal intervals around the axis of the table, and includes a wafer loading / wafer unloading zone s1 and a coarse grinding zone. (D) The table is divided into finishing grinding zones s3, and (D) a grinding wheel suitable for each grinding zone is provided on a frame 111 standing upright from the base in the rear row of the index turntable. 111b, 11
A grinding mechanism having 1d supported on spindle shafts 111a and 111c is provided corresponding to a wafer chuck mechanism located in each grinding zone. (E) The front row of the pair of cassettes, the temporary mounting table, and the wafer cleaning mechanism. An articulated robot 115 having an elevating mechanism 103, a rotary drive mechanism, a wafer alignment measuring mechanism, and a control mechanism for driving the respective arms 115a, 115b, 115c is erected substantially at the center of the base between the next rows. The wafer on the temporary table can be transferred to a chuck mechanism of a wafer loading / wafer unloading zone s1 of an index turntable, and the wafer on a cleaning mechanism can be transferred to a wafer unloading cassette. The articulated robot 115 is rotated about a pair of shafts provided on the left and right at substantially the center of a base provided with an index turntable (F). A transfer pad 112 for transferring a wafer from a temporary mounting table having a freely provided wafer suction pad 112a to a chuck mechanism of a wafer loading / wafer unloading zone, and a wafer loading / wafer unloading zone on the chuck mechanism. (G) a cleaning mechanism 109b of a chuck mechanism and a dresser 109a of a chuck mechanism capable of moving in the left-right direction on a screw bar provided on a frame body 110 erected from a base, (G). Have a pair.

【0004】前記の研削装置101(ただし、インデッ
クスタ−ンテ−ブルに設けたチャック機構はa,b,c
のm=3基である。)を用い、ウエハを研削するには次
ぎの工程を経る。
The above-mentioned grinding device 101 (however, chuck mechanisms provided on the index turntable are a, b, c
M = 3 groups. ), The following steps are used to grind the wafer.

【0005】(1)基台上に設けられたロボット115
の吸着ア−ムにウエハロ−ディング用カセット117よ
りウエハを吸着させ、これを仮置台106上に載せる。 (2)インデックスタ−ンテ−ブル118を120度
回転させ、ついで仮置台上のウエハを搬送パッド11
2に吸着させ、搬送パッドを回動させてウエハをインデ
ックスタ−ンテ−ブルのウエハロ−ディング/ウエハア
ンロ−ディングゾ−ンS1のチャック機構aに移送し、
その間に前記ロボットの吸着ア−ムにウエハロ−ディ
ング用カセットよりウエハを吸着させ、これを仮置台1
06上に載せる。
(1) Robot 115 provided on a base
The wafer is sucked from the wafer loading cassette 117 to the suction arm and is placed on the temporary mounting table 106. (2) The index turntable 118 is rotated 120 degrees, and then the wafer on the temporary table is transferred to the transfer pad 11.
The wafer is transferred to the chuck mechanism a of the wafer loading / wafer unloading zone S1 of the index turntable by rotating the transfer pad.
In the meantime, the wafer is sucked from the wafer loading cassette to the suction arm of the robot,
06.

【0006】(3)インデックスタ−ンテ−ブル11
8を120度回転させてチャック機構aを粗研削ゾ−ン
S2に移動、チャック機構bをウエハロ−ディング/ウ
エハアンロ−ディングゾ−ンS1に移動させた後、第
1番目のスピンドル軸111aを下降させて砥石111
bをウエハに押圧し、チャック機構aおよび第1スピン
ドル軸を回転させてウエハの粗研削を行い、ついで、
第1番目のスピンドル軸を上昇させ、この間に仮置台
上のウエハを搬送パッド112でインデックスタ−ンテ
−ブルのウエハロ−ディング/ウエハアンロ−ディング
ゾ−ンS1のチャック機構bに移送するとともに、ロ
ボット115を用いてウエハロ−ディング用カセット内
のウエハを仮置台の上に載せる。
(3) Index turntable 11
After rotating the chuck mechanism a to the coarse grinding zone S2 and the chuck mechanism b to the wafer loading / wafer unloading zone S1, the first spindle shaft 111a is lowered. Whetstone 111
b is pressed against the wafer, and the chuck mechanism a and the first spindle shaft are rotated to roughly grind the wafer.
The first spindle shaft is raised, and during this time, the wafer on the temporary table is transferred to the chuck mechanism b of the wafer loading / wafer unloading zone S1 of the index turntable by the transfer pad 112, and the robot 115 The wafer in the wafer loading cassette is placed on the temporary mounting table by using.

【0007】(4)インデックスタ−ンテ−ブルを1
20度回転させて仕上研削ゾ−ンS3にチャック機構a
を移動、チャック機構bを粗研削ゾ−ンS2に移動、チ
ャック機構cをウエハロ−ディング/ウエハアンロ−デ
ィングゾ−ンS1に移動させた後、第2番目のスピン
ドル軸111cを下降させて砥石111dをウエハに押
圧し、チャック機構aおよびスピンドル軸を回転させて
ウエハの仕上研削を行い、ついで、第2番目のスピンド
ル軸を上昇させ、この間に第1番目のスピンドル軸を
下降させて砥石をウエハに押圧し、チャック機構bおよ
びスピンドル軸を回転させてウエハの粗研削を行い、つ
いで、第1番目のスピンドル軸を上昇させ、一方仮置
台上のウエハを搬送パッドでインデックスタ−ンテ−ブ
ルのウエハロ−ディング/ウエハアンロ−ディングゾ−
ンのチャック機構cに移送するとともに、ロボット1
15を用いてウエハロ−ディング用カセット内のウエハ
を仮置台の上に載せる。
(4) The index turntable is set to 1
Rotate by 20 degrees and place chuck mechanism a on finish grinding zone S3.
After moving the chuck mechanism b to the coarse grinding zone S2 and the chuck mechanism c to the wafer loading / wafer unloading zone S1, the second spindle shaft 111c is lowered to remove the grindstone 111d. The wafer is pressed and the chuck mechanism a and the spindle shaft are rotated to finish grind the wafer. Then, the second spindle shaft is raised, and during this time, the first spindle shaft is lowered to move the grindstone to the wafer. Is pressed to rotate the chuck mechanism b and the spindle shaft to roughly grind the wafer. Then, the first spindle shaft is raised, and the wafer on the temporary mounting table is indexed by a transfer pad. -Loading / wafer unloading zone-
To the chuck mechanism c of the
The wafer in the wafer loading cassette is placed on the temporary mounting table by using 15.

【0008】(5)インデックスタ−ンテ−ブルを1
20度回転させてチャック機構aをウエハロ−ディング
/ウエハアンロ−ディングゾ−ンS1に、チャック機構
bを仕上研削ゾ−ンS3にならびにチャック機構cを粗
研削ゾ−ンS2に移動し、搬送パッドで仕上研削され
たウエハを洗浄機構113に搬送パッド112で移送
し、該ウエハを洗浄した後、エッチング機構20内のロ
ボット25のア−ムに仕上研削および洗浄されたウエハ
を吸着させ、これをエッチング機構のスピナ26に載
せ、ウエハ表面をエッチング処理、洗浄、リンスする。
リンスされたウエハをロボット25の吸着ア−ムに吸着
させ、アンロ−ディング用カセット24内に収納する。
ついで、搬送パッド112を回動させて仮置台106
上のウエハをインデックスタ−ンテ−ブルのウエハロ−
ディング/ウエハアンロ−ディングゾ−ンのチャック機
構aに移送し、一方、前記ロボット115の吸着ア−
ムにウエハロ−ディング用カセットよりウエハを吸着さ
せ、これを仮置台上に載せ、その間に第2番目のスピ
ンドル軸を下降させて砥石をウエハに押圧し、チャック
機構bおよびスピンドル軸を回転させてウエハの仕上研
削を行い、ついで、第2番目のスピンドル軸を上昇さ
せ、また、第1番目のスピンドル軸を下降させて砥石
をウエハに押圧し、チャック機構cおよびスピンドル軸
を回転させてウエハの粗研削を行い、ついで、第1番目
のスピンドル軸を上昇させる。
(5) The index turntable is set to 1
By rotating the chuck mechanism 20 degrees, the chuck mechanism a is moved to the wafer loading / wafer unloading zone S1, the chuck mechanism b is moved to the finish grinding zone S3, and the chuck mechanism c is moved to the rough grinding zone S2. The finish-ground wafer is transferred to the cleaning mechanism 113 by the transfer pad 112, and the wafer is cleaned. Then, the arm of the robot 25 in the etching mechanism 20 attracts the finished-ground and cleaned wafer, and is etched. The wafer is placed on a spinner 26 of the mechanism, and the surface of the wafer is etched, cleaned, and rinsed.
The rinsed wafer is sucked by the suction arm of the robot 25 and stored in the unloading cassette 24.
Next, the transport pad 112 is rotated so that the
The upper wafer is indexed into a wafer table.
To the chuck mechanism a of the loading / wafer unloading zone, while the suction arm of the robot 115
The wafer is sucked from the wafer loading cassette onto the temporary mounting table, and the second spindle shaft is lowered to press the grindstone against the wafer while rotating the chuck mechanism b and the spindle shaft. Finish grinding of the wafer is performed, then the second spindle shaft is raised, and the first spindle shaft is lowered to press the grindstone against the wafer, and the chuck mechanism c and the spindle shaft are rotated to rotate the wafer. Rough grinding is performed, and then the first spindle shaft is raised.

【0009】(6)インデックスタ−ンテ−ブルを1
20度回転させてチャック機構bをウエハロ−ディング
/ウエハアンロ−ディングゾ−ンに、チャック機構cを
仕上研削ゾ−ンにならびにチャック機構aを粗研削ゾ−
ンに移動し、搬送パッドで仕上研削されたウエハを洗
浄機構に移送し、該ウエハを洗浄した後、ロボット25
のア−ムに仕上研削および洗浄されたウエハを吸着さ
せ、これをエッチング機構のスピナ26に載せ、ウエハ
表面をエッチング処理、洗浄、リンスする。リンスされ
たウエハをロボット25の吸着ア−ムに吸着させ、アン
ロ−ディング用カセット24内に収納する。ついで、
搬送パッド112を回動させて仮置台106上のウエハ
をインデックスタ−ンテ−ブルのウエハロ−ディング/
ウエハアンロ−ディングゾ−ンのチャック機構bに移送
し、一方、前記ロボットの吸着ア−ムにウエハロ−デ
ィング用カセットよりウエハを吸着させ、これを仮置台
上に載せ、その間に第2番目のスピンドル軸を下降さ
せて砥石をウエハに押圧し、チャック機構cおよびスピ
ンドル軸を回転させてウエハの仕上研削を行い、つい
で、第2番目のスピンドル軸を上昇させ、また、第1
番目のスピンドル軸を下降させて砥石をウエハに押圧
し、チャック機構aおよびスピンドル軸を回転させてウ
エハの粗研削を行い、ついで、第1番目のスピンドル軸
を上昇させる。
(6) One index turntable
The chuck mechanism b is rotated by 20 degrees, the chuck mechanism b is used as a wafer loading / wafer unloading zone, the chuck mechanism c is used as a finish grinding zone, and the chuck mechanism a is used as a rough grinding zone.
The wafer is then transferred to a cleaning mechanism, and the robot is cleaned.
The finished grinding and washed wafer is adsorbed on the arm, and the wafer is placed on a spinner 26 of an etching mechanism, and the wafer surface is etched, washed and rinsed. The rinsed wafer is sucked by the suction arm of the robot 25 and stored in the unloading cassette 24. Then
By rotating the transfer pad 112, the wafer on the temporary table 106 is loaded into an index turntable.
The wafer is transferred to a chuck mechanism b of a wafer unloading zone, and a wafer is suctioned from a wafer loading cassette to a suction arm of the robot, and the wafer is placed on a temporary mounting table. Is lowered to press the grindstone against the wafer, the chuck mechanism c and the spindle shaft are rotated to finish grind the wafer, and then the second spindle shaft is raised, and
The second spindle is lowered to press the grindstone against the wafer, and the chuck mechanism a and the spindle are rotated to roughly grind the wafer, and then the first spindle is raised.

【0010】(7)インデックスタ−ンテ−ブルを1
20度回転させてチャック機構cをウエハロ−ディング
/ウエハアンロ−ディングゾ−ンに、チャック機構aを
仕上研削ゾ−ンにならびにチャック機構bを粗研削ゾ−
ンに移動し、搬送パッドで仕上研削されたウエハを洗
浄機構に移送し、該ウエハを洗浄、リンスした後、ロボ
ット25のア−ムに仕上研削および洗浄されたウエハを
吸着させ、これをエッチング機構のスピナ26に載せ、
ウエハ表面をエッチング処理、洗浄、リンスする。リン
スされたウエハをロボット25の吸着ア−ムに吸着さ
せ、アンロ−ディング用カセット24内に収納する。
ついで、搬送パッドを回動させて仮置台上のウエハをイ
ンデックスタ−ンテ−ブルのウエハロ−ディング/ウエ
ハアンロ−ディングゾ−ンのチャック機構cに移送し、
一方、前記ロボット115の吸着ア−ムにウエハロ−
ディング用カセットよりウエハを吸着させ、これを仮置
台上に載せ、その間に第2番目のスピンドル軸を下降
させて砥石をウエハに押圧し、チャック機構aおよびス
ピンドル軸を回転させてウエハの仕上研削を行い、つい
で、第2番目のスピンドル軸を上昇させ、また、第1
番目のスピンドル軸を下降させて砥石をウエハに押圧
し、チャック機構bおよびスピンドル軸を回転させてウ
エハの粗研削を行い、ついで、第1番目のスピンドル軸
を上昇させる。
(7) The index turntable is set to 1
By rotating the chuck mechanism 20 degrees, the chuck mechanism c becomes a wafer loading / wafer unloading zone, the chuck mechanism a becomes a finish grinding zone, and the chuck mechanism b becomes a rough grinding zone.
Then, the wafer that has been finish-ground by the transfer pad is transferred to a cleaning mechanism, and the wafer is cleaned and rinsed. The arm of the robot 25 attracts the wafer that has been finish-ground and cleaned, and is etched. Put on the spinner 26 of the mechanism,
Etching, cleaning and rinsing of the wafer surface. The rinsed wafer is sucked by the suction arm of the robot 25 and stored in the unloading cassette 24.
Then, the transfer pad is rotated to transfer the wafer on the temporary table to the chuck mechanism c of the wafer loading / unloading zone of the index turntable.
On the other hand, the wafer arm is attached to the suction arm of the robot 115.
The wafer is sucked from the loading cassette and placed on a temporary mounting table, during which the second spindle shaft is lowered to press the grindstone against the wafer, and the chuck mechanism a and the spindle shaft are rotated to finish grind the wafer. And then raise the second spindle shaft, and
The second spindle is lowered to press the grindstone against the wafer, and the chuck mechanism b and the spindle are rotated to roughly grind the wafer, and then the first spindle is raised.

【0011】(8)以下、インデックスタ−ンテ−ブル
の回動と、粗研削ウエハの仕上研削、洗浄、ウエハのエ
ッチング処理、エッチング処理されたウエハのアンロ−
ディング用カセット内の収納、新たなウエハのウエハロ
−ディング/ウエハアンロ−ディングゾ−ンのチャック
機構への移送、ウエハの粗研削の(5)から(7)の工
程を繰り返す。なお、チャック機構の洗浄機構109b
とチャック機構のドレッサ−109aは、昇降可能、か
つ、左右方向に移動可能であり、仮置台上にウエハがな
く空となっているときに下降し、チャックを洗浄または
ドレスする。
(8) Hereinafter, the rotation of the index turntable, the finish grinding and cleaning of the coarsely ground wafer, the etching of the wafer, and the unlocking of the etched wafer.
Steps (5) to (7) of storing in a loading cassette, transferring a new wafer to a wafer loading / unloading zone to a chuck mechanism, and rough grinding of a wafer are repeated. The cleaning mechanism 109b of the chuck mechanism
And a dresser 109a of the chuck mechanism can move up and down and move in the left-right direction. When the temporary table is empty with no wafer, the dresser 109a cleans or dresses the chuck.

【0012】図4において、21は研削装置101とエ
ッチング機構20の仕切壁に設けられたシャタ−機構
で、ウエハの移送用の開口部を開閉する。35もシャタ
−機構である。上記エッチング機構に代わって研磨機構
を取ることもある(特願平11−111250号明細書
参照)。
In FIG. 4, reference numeral 21 denotes a shutter mechanism provided on a partition wall of the grinding apparatus 101 and the etching mechanism 20 for opening and closing an opening for transferring a wafer. 35 is a shutter mechanism. A polishing mechanism may be used instead of the etching mechanism (see Japanese Patent Application No. 11-111250).

【0013】従来の研削装置において、研削されたウエ
ハの洗浄は、研削装置101による研削が行われた後、
洗浄機構113にウエハが移送され、そこで洗浄、リン
スが行われていた。しかしながら、チャックより研削さ
れたウエハが移送される間にウエハ表面が乾燥し、ウエ
ハ表面に研削屑や研削液中の固形物が付着し、洗浄機構
113においてのこれら固形物のウエハ表面よりの除去
が困難となったり、同様に研削されたウエハがチャック
より次工程(洗浄、エッチング、研磨またはアンロ−デ
ィングなど)へ移送される間にチャック表面が乾燥し、
チャック表面に研削屑や研削液中の固形物が付着し、チ
ャックの洗浄、ドレスが困難となったり、ウエハにスク
ラッチ(傷)を与える原因となることがあった。
In the conventional grinding device, the cleaned wafer is cleaned by the grinding device 101 after the grinding.
The wafer was transferred to the cleaning mechanism 113, where cleaning and rinsing were performed. However, the surface of the wafer dries while the wafer ground by the chuck is transferred, and grinding debris and solids in the grinding fluid adhere to the wafer surface, and the cleaning mechanism 113 removes these solids from the wafer surface. Or the surface of the chuck dries while the similarly ground wafer is transferred from the chuck to the next process (cleaning, etching, polishing or unloading, etc.)
Grinding debris and solids in the grinding fluid adhere to the chuck surface, making cleaning and dressing of the chuck difficult, and causing scratches on the wafer.

【0014】特に、デバイス模様が施されているウエハ
の裏面研削にはかかる固形物の付着が問題視され、イン
デックステ−ブルに設けられたチャック上でウエハをブ
ラシスクラブ洗浄することが提案(特開平10−172
932号)され、実施されている。すなわち、図4にお
ける洗浄機構113を無くし、かつ、チャック機構の洗
浄機構109bとチャック機構のドレッサ−109a
を、チャック機構の洗浄機構209bとウエハのスクラ
ブ洗浄機構209aに変えた研削装置201である。か
かる研削装置201において、チャック上の研削された
ウエハは次のように洗浄、搬送される。
In particular, adhesion of such solid matter is considered to be a problem in grinding the back surface of a wafer on which a device pattern is provided, and it is proposed to brush-scrub the wafer on a chuck provided on an index table. Kaihei 10-172
No. 932). That is, the cleaning mechanism 113 in FIG. 4 is eliminated, and the cleaning mechanism 109b of the chuck mechanism and the dresser 109a of the chuck mechanism are used.
Is a grinding apparatus 201 in which a cleaning mechanism 209b of a chuck mechanism and a wafer scrub cleaning mechanism 209a are replaced. In such a grinding apparatus 201, the ground wafer on the chuck is cleaned and transported as follows.

【0015】(1)回転可能な中空軸に軸承された通気
性を有する円板状台(チャック)上にバキュ−ムチャッ
クされているウエハの研削面に、回転可能なブラシとブ
ラシ面に洗浄液を供給するノズルを備えるスクラブ洗浄
機器209aを下降させて回転するブラシを前記ウエハ
表面上に押しつけると共に前記ノズルより洗浄液をウエ
ハ表面に吹き付けつつウエハ表面をブラシスクラブ洗浄
する。 (2)ブラシスクラブ洗浄されたウエハを吸着パッド1
12を回動させて移動させ、ウエハを吸着させたのちに
吸着パッドによりウエハを次工程へ搬送する。
(1) A rotatable brush and a cleaning liquid are applied to a brush surface of a wafer, which is vacuum-chucked on a gas-permeable disk-shaped base (chuck) supported on a rotatable hollow shaft. A scrub cleaning device 209a having a nozzle for supply is lowered to press a rotating brush on the wafer surface, and to brush scrub the wafer surface while spraying a cleaning liquid from the nozzle on the wafer surface. (2) The brush-scrub-cleaned wafer is put on the suction pad 1
The wafer 12 is rotated to move the wafer, and after the wafer is sucked, the wafer is transferred to the next step by the suction pad.

【0016】[0016]

【発明が解決しようとする課題】上記スクラブ洗浄にお
いても、ウエハ研削面の洗浄後、洗浄液の供給を止め、
洗浄機器209aを上昇、左右へ移動させてから吸着パ
ッドによりウエハを次工程へ搬送する。よって、スクラ
ブ洗浄機器209aの上昇、左右への移動、吸着パッド
112回動の間にウエハ表面、チャック表面に前述の固
形物が付着する機会が生じる。
In the above-mentioned scrub cleaning, supply of the cleaning liquid is stopped after cleaning the ground surface of the wafer.
The cleaning device 209a is raised and moved to the left and right, and then the wafer is transferred to the next step by the suction pad. Therefore, there is an opportunity for the above-mentioned solid matter to adhere to the wafer surface and the chuck surface during the lifting of the scrub cleaning device 209a, the movement to the left and right, and the rotation of the suction pad 112.

【0017】ウエハ表面の固形物の付着はスクラブ洗浄
時間を長くすれば防げる。しかし、チャック表面の固形
物の付着は防ぐことができず、チャック洗浄を困難とす
る。本発明は、研削されたウエハがチャックより次工程
(洗浄、エッチング、研磨またはアンロ−ディングな
ど)へ移送される間のチャック、ウエハ表面の乾燥を防
ぎ、ウエハ表面への研削屑や研削液中の固形物が付着す
ることが無い研削ウエハの搬送方法の提供を目的とす
る。
The adhesion of solids on the wafer surface can be prevented by extending the scrub cleaning time. However, adhesion of solids on the chuck surface cannot be prevented, making chuck cleaning difficult. The present invention prevents the chuck and wafer surface from drying while the ground wafer is transferred from the chuck to the next process (cleaning, etching, polishing or unloading, etc.), and removes grinding chips and grinding fluid from the wafer surface. It is an object of the present invention to provide a method for transferring a ground wafer to which no solid matter adheres.

【0018】[0018]

【課題を解決するための手段】本発明の請求項1は、研
削装置により研削されたウエハを洗浄し、次工程に搬送
する方法において、次の(1)から(4)のステップを
経ることを特徴とする、ウエハの洗浄・搬送方法を提供
するものである。 (1)回転可能な中空軸に軸承された通気性・通水性を
有する円板状台上に研削されたウエハの研削面を上にし
てバキュ−ムチャックする。 (2)回転可能なブラシとブラシ面に洗浄液を供給する
ノズルを備えるスクラブ洗浄機器を下降させて回転する
ブラシを前記ウエハ表面上に押しつけると共に前記ノズ
ルより洗浄液をウエハ表面に吹き付けつつウエハ表面を
ブラシスクラブ洗浄する。
According to a first aspect of the present invention, there is provided a method of cleaning a wafer ground by a grinding apparatus and transferring the wafer to a next step, wherein the method includes the following steps (1) to (4). And a method of cleaning and transporting a wafer. (1) Vacuum chucking is performed on a disk-shaped table having air permeability and water permeability supported on a rotatable hollow shaft with the ground surface of the ground wafer facing upward. (2) A scrub cleaning device having a rotatable brush and a nozzle for supplying a cleaning liquid to the brush surface is lowered to press the rotating brush onto the wafer surface, and to brush the wafer surface while spraying the cleaning liquid from the nozzle onto the wafer surface. Scrub clean.

【0019】(3)洗浄液の供給を止め、スクラブ洗浄
機器を上昇させた後、またはスクラブ洗浄機器を上昇さ
せ、洗浄液の供給を止めた後、ついで、リンス水供給管
よりウエハ表面に水膜ができる量のリンス水を供給しつ
つバキュ−ムチャックの減圧を停止し、前記中空軸より
加圧水をウエハ裏面に供給してウエハのチャック離れを
容易とする。 (4)前記リンス水の供給を続けつつ、洗浄・リンスさ
れたウエハの上面に搬送機構の吸着パッドを回動させて
移動させ、表面に水膜が形成されているウエハを吸着さ
せたのちに吸着パッドによりウエハを次工程へ搬送す
る。
(3) After the supply of the cleaning liquid is stopped and the scrub cleaning equipment is raised, or after the scrub cleaning equipment is raised and the supply of the cleaning liquid is stopped, a water film is formed on the wafer surface from the rinse water supply pipe. Depressurization of the vacuum chuck is stopped while supplying as much rinsing water as possible, and pressurized water is supplied from the hollow shaft to the back surface of the wafer, thereby facilitating separation of the wafer from the chuck. (4) While continuing to supply the rinsing water, the suction pad of the transfer mechanism is rotated and moved to the upper surface of the washed and rinsed wafer, and the wafer having the water film formed on the surface is sucked. The wafer is transferred to the next step by the suction pad.

【0020】研削されたウエハの搬送時に、ウエハ表面
およびチャックの円板状台(チャック)表面はリンス水
で濡れているので固形物の付着が防げる。チャック上か
らウエハがどかされると、チャック洗浄機器209bが
濡れているチャック表面を洗浄するのでチャック表面に
異物が付着しない。
When the ground wafer is transferred, the surface of the wafer and the surface of the chuck-shaped disk-shaped table (chuck) are wet with the rinsing water, so that adhesion of solids can be prevented. When the wafer is removed from above the chuck, the chuck cleaning device 209b cleans the wet chuck surface, so that foreign matter does not adhere to the chuck surface.

【0021】本発明の請求項2は、上記洗浄・搬送方法
において、スクラブ洗浄機器とチャック洗浄機器とはリ
ンス水供給管の左右に対となるよう配置され、スクラブ
洗浄機器、リンス水供給管およびチャック洗浄機器が一
体に円板状台表面に平行な面に水平移動可能に設けられ
ていることを特徴とする。
According to a second aspect of the present invention, in the above-mentioned cleaning / transporting method, the scrub cleaning device and the chuck cleaning device are arranged so as to be paired on the left and right sides of the rinse water supply tube, and the scrub cleaning device, the rinse water supply tube and The chuck cleaning device is integrally provided so as to be horizontally movable on a plane parallel to the surface of the disk-shaped base.

【0022】研削装置がコンパクトとなる。The grinding device becomes compact.

【0023】[0023]

【発明の実施の形態】以下、図面を用いて本発明をさら
に詳細に説明する。図1は本発明の実施に用いる研削装
置の一例を示す部分平面図、図2は該研削装置の側面
図、および図3は該研削装置のスクラブ洗浄機器、チャ
ック洗浄機器およびリンス水供給管の部分を示す図2の
拡大図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a partial plan view showing an example of a grinding device used for carrying out the present invention, FIG. 2 is a side view of the grinding device, and FIG. 3 is a diagram showing a scrub cleaning device, a chuck cleaning device and a rinse water supply pipe of the grinding device. FIG. 3 is an enlarged view of FIG. 2 showing a portion.

【0024】図1、図2および図3に示す研削装置20
1において、107a,107b,107cはチャッ
ク、108はインデックステ−ブル、111aは第一ス
ピンドル軸、111cは第二スピンドル軸、112は搬
送パッド、112aは吸着パッド、112bは回転軸、
112cは空気管、209aはスクラブ洗浄機器、20
9bはチャック洗浄機器、209cはリンス水供給管、
210はブラシ、211は洗浄水噴出口、212はセラ
ミック製ドレッサ、213はスクラブ洗浄機器を昇降さ
せるエアシリンダ、214はチャック洗浄機器を昇降す
るエア−シリンダ、215はリンス水供給管の固定板、
216はホ−スである。スクラブ洗浄機器209aとチ
ャック洗浄機器209bは、リンス水供給管209cの
左右に対となるよう配置され、スクラブ洗浄機器、リン
ス水供給管およびチャック洗浄機器が一体に円板状台
(チャック)107表面に平行な面に水平移動可能に設
けられる。
The grinding apparatus 20 shown in FIGS. 1, 2 and 3
In FIG. 1, 107a, 107b and 107c are chucks, 108 is an index table, 111a is a first spindle axis, 111c is a second spindle axis, 112 is a transport pad, 112a is a suction pad, 112b is a rotary axis,
112c is an air tube, 209a is a scrub cleaning device, 20
9b is a chuck cleaning device, 209c is a rinse water supply pipe,
210 is a brush, 211 is a washing water spout, 212 is a ceramic dresser, 213 is an air cylinder for raising and lowering the scrub cleaning equipment, 214 is an air cylinder for raising and lowering the chuck cleaning equipment, 215 is a fixing plate for the rinse water supply pipe,
216 is a hose. The scrub cleaning device 209a and the chuck cleaning device 209b are arranged so as to form a pair on the left and right sides of the rinse water supply pipe 209c. Are provided so as to be able to move horizontally on a plane parallel to.

【0025】217は、レ−ルで、スクラブ洗浄機器、
リンス水供給管およびチャック洗浄機器の一体物を左右
方向に移動するに用いる。218はプラスチックチェ−
ンである。219,220は2点式インプロセスゲ−ジ
(ウエハ厚み測定機器)である。
Reference numeral 217 denotes a rail, a scrub cleaning device,
It is used to move the rinse water supply pipe and the chuck cleaning device together in the horizontal direction. 218 is a plastic chain
It is. 219 and 220 are two-point in-process gages (wafer thickness measuring devices).

【0026】研削装置201により研削された第二研削
ゾ−ンS3のチャック107にバキュ−ム吸着されたウ
エハの洗浄・搬送は次の工程を経て行われる。 (1)インデックステ−ブル108を回転させ、第二研
削ゾ−ンS3のチャック107をウエハロ−ディング/
アンロ−ディング/スクラブ洗浄ゾ−ンS1に移動す
る。 (2)ゾ−ンS1にあるバキュ−ム吸着された研削ウエ
ハ上方位置にスクラブ洗浄機器209aをレ−ル217
上で移動し、ついでスクラブ洗浄機器のブラシ211が
ウエハ表面に接するまで下降し、洗浄水をノズル211
よりウエハ面に供給しながらブラシを回転させウエハ研
削面をブラシスクラブ洗浄し、研削屑や砥粒を洗い流
す。この間、チャックは回転している。ブラシを回転さ
せ、洗浄水を供給しながらスクラブ洗浄機器を下降させ
ウエハ表面にブラシを接触させてもよい。 (3)洗浄液の供給を止め、スクラブ洗浄機器209a
を上昇させた後、またはスクラブ洗浄機器を上昇させ、
洗浄液の供給を止めた後、ついで、リンス水供給管20
9cよりウエハ表面に水膜ができる量(例えば直径20
0mmまたは300mmのウエハで0.5〜3リットル
/分)のリンス水を供給しつつバキュ−ムチャックの減
圧を停止し、前記中空軸より加圧水をウエハ裏面に供給
してウエハのチャック離れを容易とする。 (4)前記リンス水の供給を続けつつ、洗浄・リンスさ
れたウエハの上面に搬送機構112の吸着パッド112
aを回動させ、ウエハを吸着させたのちに吸着パッドに
よりウエハを次工程(例えば収納カセット、エッチン
グ、研磨)へ搬送する。
The cleaning and transfer of the wafer vacuum-adsorbed to the chuck 107 of the second grinding zone S3, which has been ground by the grinding device 201, is performed through the following steps. (1) The index table 108 is rotated, and the chuck 107 of the second grinding zone S3 is loaded / wafer-loaded.
Move to unloading / scrub cleaning zone S1. (2) A scrub cleaning device 209a is mounted on the rail 217 at a position above the vacuum-adsorbed ground wafer in the zone S1.
Then, the brush 211 of the scrub cleaning device is lowered until the brush 211 of the scrub cleaning device comes into contact with the surface of the wafer.
The brush is rotated while supplying the wafer to the wafer surface, and the wafer grinding surface is scrubbed with a brush to wash away grinding dust and abrasive grains. During this time, the chuck is rotating. The brush may be rotated and the scrub cleaning device may be lowered while supplying cleaning water to bring the brush into contact with the wafer surface. (3) The supply of the cleaning liquid is stopped, and the scrub cleaning device 209a is used.
After raising, or raising the scrub cleaning equipment,
After the supply of the cleaning liquid is stopped, the rinse water supply pipe 20
9c, the amount of water film formed on the wafer surface (for example,
The vacuum pressure of the vacuum chuck is stopped while rinsing water (0.5 to 3 liters / minute for a 0 mm or 300 mm wafer) is supplied, and pressurized water is supplied to the back surface of the wafer from the hollow shaft to facilitate wafer separation from the chuck. I do. (4) While continuing to supply the rinsing water, the suction pad 112 of the transfer mechanism 112 is placed on the upper surface of the cleaned and rinsed wafer.
After the wafer is sucked, the wafer is conveyed to the next step (for example, storage cassette, etching, polishing) by the suction pad.

【0027】ウエハが搬送され、S1ゾ−ンのチャック
上が空になると、チャック洗浄機器209bがレ−ル2
17上を左右方向に移動し、ついでチャック洗浄機器の
環状セラミック212がウエハ表面に接するまで下降
し、洗浄水をウエハ面に供給しながらセラミックを回転
させチャック表面を洗浄し、研削屑や砥粒を洗い流す。
この間、チャックは回転している。
When the wafer is conveyed and the chuck on the S1 zone is emptied, the chuck cleaning device 209b is moved to the rail 2
17, the chuck ceramic is lowered until the annular ceramic 212 of the chuck cleaning device comes into contact with the wafer surface, the ceramic is rotated while cleaning water is supplied to the wafer surface, and the chuck surface is cleaned to remove grinding chips and abrasive grains. Wash off.
During this time, the chuck is rotating.

【0028】[0028]

【発明の効果】本発明の研削されたウエハの洗浄・搬送
方法は、ウエハを次工程へ搬送時にもウエハ表面をリン
ス水で濡らすように、およびウエハがチャック上から除
かれた際はチャック表面にリンス水が供給され、チャッ
ク表面が濡らされるので、チャック表面に研削屑や砥粒
が乾燥して固着すると言うことはない。
According to the method of cleaning and carrying a ground wafer of the present invention, the wafer surface is rinsed with rinsing water even when the wafer is carried to the next step, and the surface of the chuck is removed when the wafer is removed from the chuck. Since the rinsing water is supplied to the chuck surface and the chuck surface is wetted, it does not happen that grinding dust and abrasive grains are dried and adhered to the chuck surface.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 研削装置の部分平面図である。FIG. 1 is a partial plan view of a grinding device.

【図2】 図1の研削装置の側面図である。FIG. 2 is a side view of the grinding device of FIG.

【図3】 図1の部分拡大図である。FIG. 3 is a partially enlarged view of FIG. 1;

【図4】 エッチング機構が付属した研削装置の部分平
面図である。
FIG. 4 is a partial plan view of a grinding device provided with an etching mechanism.

【図5】 公知の研削装置の斜視図である。FIG. 5 is a perspective view of a known grinding device.

【符号の説明】[Explanation of symbols]

101 研削装置 201 研削装置 107 チャック 108 インデックステ−ブル 111a,111c スピンドル軸 111b、111d 研削砥石 112 搬送機構 112a 吸着パッド 209a ブラシスクラブ洗浄機器 209b チャック洗浄機器 209c リンス水供給管 101 Grinding device 201 Grinding device 107 Chuck 108 Index table 111a, 111c Spindle shaft 111b, 111d Grinding wheel 112 Transfer mechanism 112a Suction pad 209a Brush scrub cleaning device 209b Chuck cleaning device 209c Rinse water supply pipe

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 研削装置により研削されたウエハを洗浄
し、次工程に搬送する方法において、次のステップを経
ることを特徴とするウエハの洗浄・搬送方法 (1)回転可能な中空軸に軸承された通気性・通水性を
有する円板状台上に研削されたウエハの研削面を上にし
てバキュ−ムチャックする。 (2)回転可能なブラシとブラシ面に洗浄液を供給する
ノズルを備えるスクラブ洗浄機器を下降させて回転する
ブラシを前記ウエハ表面上に押しつけると共に前記ノズ
ルより洗浄液をウエハ表面に吹き付けつつウエハ表面を
ブラシスクラブ洗浄する。 (3)洗浄液の供給を止め、スクラブ洗浄機器を上昇さ
せた後、またはスクラブ洗浄機器を上昇させ、洗浄液の
供給を止めた後、ついで、リンス水供給管よりウエハ表
面に水膜ができる量のリンス水を供給しつつバキュ−ム
チャックの減圧を停止し、前記中空軸より加圧水をウエ
ハ裏面に供給してウエハのチャック離れを容易とする。 (4)前記リンス水の供給を続けつつ、洗浄・リンスさ
れたウエハの上面に搬送機構の吸着パッドを回動させて
移動させ、表面に水膜が形成されている洗浄・リンスさ
れたウエハの上面に搬送機構の吸着パッドを回動させて
移動させ、ウエハを吸着させたのちに吸着パッドにより
ウエハを次工程へ搬送する。
1. A method of cleaning and transporting a wafer ground by a grinding device and transporting the wafer to the next step, wherein the method includes the following steps: (1) a rotatable hollow shaft Vacuum chucking is performed on the disc-shaped base having air permeability and water permeability, with the ground surface of the ground wafer facing upward. (2) A scrub cleaning device having a rotatable brush and a nozzle for supplying a cleaning liquid to the brush surface is lowered to press the rotating brush onto the wafer surface, and to brush the wafer surface while spraying the cleaning liquid from the nozzle onto the wafer surface. Scrub clean. (3) After the supply of the cleaning liquid is stopped and the scrub cleaning equipment is raised, or after the scrub cleaning equipment is raised and the supply of the cleaning liquid is stopped, the amount of a water film formed on the wafer surface from the rinse water supply pipe is reduced. Depressurization of the vacuum chuck is stopped while rinsing water is being supplied, and pressurized water is supplied to the back surface of the wafer from the hollow shaft to facilitate the separation of the wafer from the chuck. (4) While continuing to supply the rinsing water, the suction pad of the transfer mechanism is rotated and moved to the upper surface of the cleaned / rinsed wafer to remove the rinsed / rinsed wafer having a water film formed on the surface. The suction pad of the transfer mechanism is rotated and moved to the upper surface, and after the wafer is sucked, the wafer is transferred to the next step by the suction pad.
【請求項2】 スクラブ洗浄機器とチャック洗浄機器と
はリンス水供給管の左右に対となるよう配置され、スク
ラブ洗浄機器、リンス水供給管およびチャック洗浄機器
が一体に円板状台表面に平行な面に水平移動可能に設け
られていることを特徴とする、請求工1に記載のウエハ
の洗浄・搬送方法。
2. A scrub cleaning device and a chuck cleaning device are arranged so as to form a pair on the left and right sides of a rinse water supply pipe, and the scrub cleaning device, the rinse water supply pipe and the chuck cleaning device are integrally parallel to the surface of the disk-shaped base. 2. The method for cleaning and transporting a wafer according to claim 1, wherein the method is provided so as to be horizontally movable on a flat surface.
JP2000117307A 2000-04-19 2000-04-19 Method for cleaning and transporting ground wafers Expired - Fee Related JP4672829B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016127195A (en) * 2015-01-07 2016-07-11 株式会社ディスコ Wafer grinding method

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JPH0629189A (en) * 1992-07-13 1994-02-04 Hitachi Ltd Projection type aligner, method therefor and illumination optical device
JPH07135192A (en) * 1993-11-09 1995-05-23 Sony Corp Polishing post-treatment for substrate and polishing device to be used for this
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JPH10270393A (en) * 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk Method and device for cleaning wafer
JPH11226521A (en) * 1998-02-18 1999-08-24 Disco Abrasive Syst Ltd Chuck table cleaning apparatus
JPH11265864A (en) * 1998-03-17 1999-09-28 Matsushita Electron Corp Wafer carrying method and carrying equipment thereof
JPH11300301A (en) * 1998-04-27 1999-11-02 Dainippon Screen Mfg Co Ltd Method of washing substrate and device therefor
JPH11309652A (en) * 1998-04-27 1999-11-09 Tokyo Seimitsu Co Ltd Plane processing device for wafer
JPH11354479A (en) * 1998-06-05 1999-12-24 Toshiba Mach Co Ltd Spin washing device
JP2000021828A (en) * 1998-04-27 2000-01-21 Tokyo Seimitsu Co Ltd Flattening work device for wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267541A (en) * 1991-02-22 1992-09-24 Shibayama Kikai Kk Method of removing semiconductor wafer in chuck mechanism
JPH0629189A (en) * 1992-07-13 1994-02-04 Hitachi Ltd Projection type aligner, method therefor and illumination optical device
JPH07135192A (en) * 1993-11-09 1995-05-23 Sony Corp Polishing post-treatment for substrate and polishing device to be used for this
JPH0929189A (en) * 1995-05-12 1997-02-04 Tokyo Electron Ltd Cleaner
JPH10270393A (en) * 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk Method and device for cleaning wafer
JPH11226521A (en) * 1998-02-18 1999-08-24 Disco Abrasive Syst Ltd Chuck table cleaning apparatus
JPH11265864A (en) * 1998-03-17 1999-09-28 Matsushita Electron Corp Wafer carrying method and carrying equipment thereof
JPH11300301A (en) * 1998-04-27 1999-11-02 Dainippon Screen Mfg Co Ltd Method of washing substrate and device therefor
JPH11309652A (en) * 1998-04-27 1999-11-09 Tokyo Seimitsu Co Ltd Plane processing device for wafer
JP2000021828A (en) * 1998-04-27 2000-01-21 Tokyo Seimitsu Co Ltd Flattening work device for wafer
JPH11354479A (en) * 1998-06-05 1999-12-24 Toshiba Mach Co Ltd Spin washing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016127195A (en) * 2015-01-07 2016-07-11 株式会社ディスコ Wafer grinding method

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